TWI388937B - Exposure apparatus and device manufacturing method - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims abstract description 99
- 238000005286 illumination Methods 0.000 claims abstract description 48
- 230000003287 optical effect Effects 0.000 claims description 31
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- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000003504 photosensitizing agent Substances 0.000 description 3
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- 230000015572 biosynthetic process Effects 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/72—Controlling or varying light intensity, spectral composition, or exposure time in photographic printing apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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Abstract
Description
本發明係關於一種曝光設備,其以來自光源的照明光來照亮光罩且自該光罩將光投射至基板上以使該基板曝光,及使用該曝光設備來製造裝置的方法。The present invention relates to an exposure apparatus that illuminates a reticle with illumination light from a light source and projects light onto the substrate from the reticle to expose the substrate, and a method of manufacturing the apparatus using the exposure apparatus.
日本專利公告第61-34252號揭示具有以下配置的曝光設備:藉由光電檢測器而檢測來自基板或去至基板之光強度,獲得對應於檢測值之頻率的輸出脈波,計數該等脈波,以及當所計數脈波的數目達到預定脈波計數時而關閉光閥。於光閥中,一旋轉碟交替地設有遮光部及透光部。藉由旋轉該光閥,控制照明光的遮光狀態及透光狀態。光閥的操作延遲時間所造成之誤差,亦即,在自光閥關閉信號被產生至光閥完全關閉之期間之基板的劑量(曝光量),必須被校正。為此目的,當開啟光閥時由於光閥操作延遲對應至劑量之脈波被計數。考量脈波計數來校正產生光閥關閉信號之時序。Japanese Patent Publication No. 61-34252 discloses an exposure apparatus having a configuration in which light intensity from a substrate or a substrate is detected by a photodetector, an output pulse wave corresponding to a frequency of a detection value is obtained, and the pulse waves are counted. And closing the light valve when the number of counted pulse waves reaches a predetermined pulse count. In the light valve, a rotating disk is alternately provided with a light blocking portion and a light transmitting portion. By rotating the light valve, the light-shielding state and the light-transmitting state of the illumination light are controlled. The error caused by the operation delay time of the light valve, that is, the dose (exposure amount) of the substrate during the period from when the light valve closing signal is generated to when the light valve is completely closed, must be corrected. For this purpose, the pulse wave corresponding to the dose is counted when the light valve is opened when the light valve is turned on. Consider the pulse count to correct the timing at which the light valve close signal is generated.
當以小劑量實施曝光控制時,以日本專利公告第61-34252號中所述之配置,關閉光閥之時序有時可能會來不及。為防止此情形,未計數脈波而關閉光閥的方法、或當光強度係低時計數如上述之脈波以及當所計數脈波的數量達到預定脈波計數時而關閉光閥的方法可被採用。作為降低光強度的方法,沿著光軸移動光源的位置的方法、及將 中性密度濾波器插在光源及基板之間的方法是可能的。When the exposure control is performed in a small dose, the timing of closing the light valve may sometimes be too late as configured in Japanese Patent Laid-Open No. 61-34252. In order to prevent this, the method of closing the light valve without counting the pulse wave, or counting the pulse wave as described above when the light intensity is low, and the method of closing the light valve when the number of counted pulse waves reaches the predetermined pulse wave count may be used. Adopted. As a method of reducing the light intensity, a method of moving the position of the light source along the optical axis, and A method of inserting a neutral density filter between the light source and the substrate is possible.
未計數脈波而關閉光閥的方法,然而,需要能保證以適當劑量使晶圓或拍攝區曝光之技術。以在降低光強度時實施如上述的曝光控制的方法,產量減小。The method of closing the light valve without counting the pulse wave, however, requires a technique that ensures exposure of the wafer or the shot area at an appropriate dose. The yield is reduced in a method of performing exposure control as described above when the light intensity is lowered.
本發明就以上背景的認知已被完成,且必須實現高產能及準確劑量控制作為其示範性目的。The present invention has been accomplished with respect to the above background, and high productivity and accurate dose control must be achieved as an exemplary purpose.
依據本發明,提供一種曝光設備,其以來自光源的照明光來照亮光罩且自該光罩將光投射至基板上以使該基板曝光。該設備包含:光閥,其位在該照明光的路徑、檢測器,其配置來檢測對於該基板的劑量、及控制器,其配置來控制該光閥的操作。於使用具有第一光強度的照明光之第一曝光模式,該控制器基於來自該檢測器的輸出而控制該光閥的開啟時間且儲存該開啟時間。於使用具有高於該第一光強度的第二光強度的照明光之第二曝光模式,該控制器基於所儲存開啟時間而控制該光閥的速度。According to the present invention, there is provided an exposure apparatus that illuminates a reticle with illumination light from a light source and projects light onto the substrate from the reticle to expose the substrate. The apparatus includes a light valve positioned in the path of the illumination light, a detector configured to detect a dose for the substrate, and a controller configured to control operation of the light valve. In a first exposure mode using illumination light having a first light intensity, the controller controls the on time of the light valve based on the output from the detector and stores the on time. In a second exposure mode that uses illumination light having a second light intensity that is higher than the first light intensity, the controller controls the speed of the light valve based on the stored on time.
本發明可達到,例如,高產能及準確曝光量控制。The present invention achieves, for example, high throughput and accurate exposure control.
參照附圖,自示範性實施例的以下說明,本發明的進一步特徵將是顯而易知。Further features of the present invention will become apparent from the following description of exemplary embodiments.
以下將參照附圖說明本發明的較佳實施例。Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.
圖1為顯示依據本發明的較佳實施例之曝光設備的簡 要配置之示意圖。依據本發明的較佳實施例之曝光設備100包含:光源1、光閥4、光罩載台21、投影光學系統6及基板載台22。光罩載台21固持且定位光罩2。光罩2具有諸如形成在其上的半導體電路圖案之圖案。光源1所產生的照明光照亮光罩2。基板載台22固持且定位以光致抗蝕劑(光敏劑)塗佈之基板(晶圓)3。光罩2的圖案係經由投影光學系統6投影至基板3上以形成潛在影像圖案於施於基板3上的光致抗蝕劑。顯影劑使潛在影像圖案顯影,藉此形成抗蝕劑圖案。1 is a simplified view showing an exposure apparatus in accordance with a preferred embodiment of the present invention. The schematic to be configured. An exposure apparatus 100 according to a preferred embodiment of the present invention includes a light source 1, a light valve 4, a mask stage 21, a projection optical system 6, and a substrate stage 22. The mask stage 21 holds and positions the reticle 2. The photomask 2 has a pattern such as a semiconductor circuit pattern formed thereon. The illumination light generated by the light source 1 illuminates the reticle 2. The substrate stage 22 holds and positions a substrate (wafer) 3 coated with a photoresist (photosensitizer). The pattern of the reticle 2 is projected onto the substrate 3 via the projection optical system 6 to form a latent image pattern on the photoresist applied to the substrate 3. The developer develops the latent image pattern, thereby forming a resist pattern.
光閥4係配置在光源1及光罩載台21之間,且控制自光源1至光罩2之照明光的入射時間以決定基板3的曝光時間。曝光設備100包含:檢測基板3的劑量(曝光量)之檢測器S。曝光量感知器S可包括例如,光學感知器5、放大器7、V/F轉換器9及脈波計數器11。光學感知器5檢測光閥4及光罩載台21間的照明光的強度。光學感知器5包括光接收元件。光接收元件可被配置於光閥4及光罩載台21間之照明光的光學路徑,或藉由鏡接收擷取自光學路徑的光。放大器7將自光學感知器5輸出且指示光強度之信號轉換成電壓信號。V/F轉換器9將自放大器7輸出之電壓信號至轉換成頻率信號。脈波計數器11計數自V/F轉換器9輸出之頻率信號的脈波。脈波計數器11所計數之脈波數指示照明光的光強度的累計量,且因此與基板的劑量成比例。因此,可自脈波計數器獲得之基板的劑量所指示之資訊。The light valve 4 is disposed between the light source 1 and the mask stage 21, and controls the incident time of the illumination light from the light source 1 to the mask 2 to determine the exposure time of the substrate 3. The exposure apparatus 100 includes a detector S that detects a dose (exposure amount) of the substrate 3. The exposure amount sensor S may include, for example, an optical sensor 5, an amplifier 7, a V/F converter 9, and a pulse counter 11. The optical sensor 5 detects the intensity of the illumination light between the light valve 4 and the mask stage 21. The optical sensor 5 includes a light receiving element. The light receiving element may be disposed in an optical path of the illumination light between the light valve 4 and the mask stage 21, or receive light extracted from the optical path by the mirror. The amplifier 7 converts a signal output from the optical sensor 5 and indicating the light intensity into a voltage signal. The V/F converter 9 converts the voltage signal output from the amplifier 7 into a frequency signal. The pulse wave counter 11 counts the pulse wave of the frequency signal output from the V/F converter 9. The pulse number counted by the pulse counter 11 indicates the cumulative amount of the light intensity of the illumination light, and thus is proportional to the dose of the substrate. Therefore, the information indicated by the dose of the substrate can be obtained from the pulse counter.
曝光設備100可另包含:控制器13、輸入/輸出裝置15、目標曝光量決定單元16、光閥驅動電路14及類似物。於一特定模式,控制器13基於來自脈波計數器11的輸出而控制該劑量。光閥驅動電路14在接收來自控制器13的指令時驅動以開/關光閥4。輸入/輸出裝置(控制台)15用來輸入/輸出各類型資訊片段。目標曝光量決定單元16決定目標劑量,是基於經由輸入/輸出裝置15輸入之曝光條件,及若需要而輸入的其它資訊。The exposure apparatus 100 may further include: a controller 13, an input/output device 15, a target exposure amount determining unit 16, a light valve driving circuit 14, and the like. In a particular mode, controller 13 controls the dose based on the output from pulse counter 11. The light valve drive circuit 14 is driven to open/close the light valve 4 upon receiving an instruction from the controller 13. An input/output device (console) 15 is used to input/output various types of information segments. The target exposure amount determining unit 16 determines the target dose based on the exposure conditions input via the input/output device 15, and other information input if necessary.
圖2A、2B及2C為藉由光閥4的操作而解說曝光控制之示意圖。光閥4包括光閥板81。圖2A、2B及2C顯示光閥板81及照明光通過的光學路徑區86間位置關係的實例。圖2A顯示光閥板81的遮光部A阻擋光學路徑區86的狀態。圖2B顯示圖2A的狀態之光閥板81順時鐘旋轉60度以使其不再阻擋光學路徑區86之狀態。圖2C顯示圖2B的狀態之光閥板81進一步順時鐘旋轉60度以使遮光部B阻擋光學路徑區86之狀態。光學路徑區86未被阻擋之狀態係光閥4開啟的狀態,而光學路徑區86被阻擋之狀態為光閥4關閉的狀態。2A, 2B and 2C are schematic views illustrating the exposure control by the operation of the light valve 4. The light valve 4 includes a light valve plate 81. 2A, 2B and 2C show an example of the positional relationship between the light valve plate 81 and the optical path region 86 through which the illumination light passes. 2A shows a state in which the light shielding portion A of the light valve plate 81 blocks the optical path region 86. 2B shows the state in which the light valve plate 81 of the state of FIG. 2A is rotated clockwise by 60 degrees so that it no longer blocks the optical path region 86. 2C shows a state in which the light valve plate 81 of the state of FIG. 2B is further rotated clockwise by 60 degrees so that the light shielding portion B blocks the optical path region 86. The state in which the optical path region 86 is not blocked is a state in which the light valve 4 is opened, and the state in which the optical path region 86 is blocked is a state in which the light valve 4 is closed.
依據此實施例,當曝光使基板以低劑量曝光時之曝光順序包括使用具有第一光強度的照明光之低速曝光模式(第一曝光模式)、及使用具有高於第一光強度的第二光強度的照明光之高速曝光模式(第二曝光模式)。接在低速曝光模式之後執行高速曝光模式。According to this embodiment, the exposure sequence when the exposure exposes the substrate at a low dose includes using a low speed exposure mode (first exposure mode) of illumination light having a first light intensity, and using a second having a higher than first light intensity High-speed exposure mode (second exposure mode) of illumination light of light intensity. The high speed exposure mode is executed after the low speed exposure mode.
低速曝光模式可被實施於一批複數基板中的至少一前 導基板。於低速曝光模式,當進入基板之光的強度減小時,脈波計數器11計數自V/F轉換器9輸出之頻率信號的脈波。當所計數脈波的數目達到目標脈波計數時,光閥4被關閉。係可能以作為使光強度減小至第一光強度的方法、沿著光軸改變光源1的位置的方法或將中性濾光器插在光源及光罩間的方法。The low speed exposure mode can be implemented on at least one of a plurality of substrates Guide substrate. In the low speed exposure mode, the pulse counter 11 counts the pulse wave of the frequency signal output from the V/F converter 9 when the intensity of light entering the substrate is reduced. When the number of counted pulse waves reaches the target pulse wave count, the light valve 4 is closed. It may be a method of reducing the light intensity to the first light intensity, a method of changing the position of the light source 1 along the optical axis, or a method of inserting a neutral filter between the light source and the reticle.
高速曝光模式係針對接在曝光於低速曝光模式的基板之後的基板。例如,當該批中的第一基板被曝光於低速曝光模式時,高速曝光模式對該批的第二及以下基板實施曝光。於高速曝光模式,光閥4被以一旋轉速度旋轉,旋轉速度是基於目標劑量及校正資訊而被決定,目標劑量及校正資訊是由低速曝光模式的曝光控制所獲得的,而未使用來自曝光量感知器S的輸出,或減小光強度,來控制劑量。於單拍攝區的曝光中,於遮光部A完全阻擋光學路徑區86的狀態,如圖2A所示,光閥4可被旋轉地驅動120度,如圖2C所示,曝光時間係自遮光部A結束阻擋光學路徑區86直到遮光部B開始阻擋光學路徑區86。光閥4的旋轉速度決定該時間。The high speed exposure mode is for a substrate that is attached after exposure to a substrate in a low speed exposure mode. For example, when the first substrate in the batch is exposed to the low speed exposure mode, the high speed exposure mode exposes the second and lower substrates of the batch. In the high-speed exposure mode, the light valve 4 is rotated at a rotation speed, which is determined based on the target dose and correction information, and the target dose and correction information are obtained by the exposure control of the low-speed exposure mode, and the exposure is not used. The output of the sensor S, or the light intensity, is used to control the dose. In the exposure of the single shot area, the state of the optical path area 86 is completely blocked by the light shielding portion A. As shown in FIG. 2A, the light valve 4 can be rotationally driven by 120 degrees, as shown in FIG. 2C, and the exposure time is from the light shielding portion. A ends blocking the optical path region 86 until the opaque portion B begins to block the optical path region 86. The rotational speed of the light valve 4 determines this time.
圖3為解說目標劑量及光閥4的旋轉速度(光閥板81的旋轉速度)間的關係之曲線圖。如圖3所述之目標劑量及光閥4的旋轉速度間的關係可藉由實驗或計算來獲得,且可預先儲存於控制器13的記憶體(未顯示)作為例如近似功能或資料表。於以下說明,除非特別註明,不然”記憶體”所指的是控制器13中的記憶體。在記憶體的部分 ,一種如控制器13的外部裝置的記憶體也自然地被作為替代控制器中的記憶體13使用。FIG. 3 is a graph illustrating the relationship between the target dose and the rotational speed of the light valve 4 (the rotational speed of the light valve plate 81). The relationship between the target dose as described in FIG. 3 and the rotational speed of the light valve 4 can be obtained by experiment or calculation, and can be stored in advance in the memory (not shown) of the controller 13 as, for example, an approximate function or a data table. In the following description, unless otherwise specified, the "memory" refers to the memory in the controller 13. In the part of memory A memory such as an external device of the controller 13 is also naturally used as the memory 13 in the replacement controller.
圖4為解說布局於基板上的拍攝之示意圖。區域被配置來形成柵格在基板3上,該區域揭示稱為拍攝區之分段曝光區。圖中,拍攝區顯示曝光轉數。4 is a schematic diagram illustrating the shooting of a layout on a substrate. The area is configured to form a grid on the substrate 3 that reveals a segmented exposure zone called a shot zone. In the figure, the shooting area shows the number of exposure revolutions.
圖5為顯示在執行曝光順序之前,曝光設備100中的決定過程之流程圖。FIG. 5 is a flow chart showing a decision process in the exposure apparatus 100 before the exposure sequence is performed.
於步驟S102,控制器13經由輸入/輸出裝置15獲得轉換標準輸入或預先設定值。於步驟S103,控制器13自目標曝光量決定單元16獲得目標曝光量資訊(目標劑量)。In step S102, the controller 13 obtains a conversion standard input or a preset value via the input/output device 15. In step S103, the controller 13 obtains the target exposure amount information (target dose) from the target exposure amount determining unit 16.
於步驟S104,控制器13比較步驟S102所獲得之轉換標準與步驟S103所獲得之目標劑量。如果目標劑量大於轉換標準,過程前進至步驟S105以執行高劑量模式的曝光順序。如果目標劑量等於或小於轉換標準,控制器13使過程前進至步驟S106以執行低劑量模式的曝光順序。In step S104, the controller 13 compares the conversion criteria obtained in step S102 with the target dose obtained in step S103. If the target dose is greater than the conversion criteria, the process proceeds to step S105 to perform the exposure sequence of the high dose mode. If the target dose is equal to or less than the conversion criterion, the controller 13 advances the process to step S106 to perform the exposure sequence of the low dose mode.
圖6為顯示高劑量模式的曝光順序之流程圖。於步驟S202,控制器13將目標曝光量決定單元16所提供的目標劑量儲存(亦即,記錄)於記憶體。於步驟S203,控制器13將光閥開啟指令傳送至光閥驅動電路14以開啟光閥4。Figure 6 is a flow chart showing the exposure sequence of the high dose mode. In step S202, the controller 13 stores (i.e., records) the target dose provided by the target exposure amount determining unit 16 in the memory. In step S203, the controller 13 transmits a light valve opening command to the light valve driving circuit 14 to open the light valve 4.
於步驟S204,光閥4開啟,且光源1所產生的照明光照亮光罩2以啟動基板3的曝光。同時,基板(晶圓)3的劑量的量測亦被啟動。尤其,放大器7將自光學感知 器5輸出且指示光強度的信號轉換成電壓信號。V/F轉換器9將電壓信號轉換成脈波連列。脈波計數器11計數脈波連列的脈波。In step S204, the light valve 4 is turned on, and the illumination light generated by the light source 1 illuminates the mask 2 to activate the exposure of the substrate 3. At the same time, the measurement of the dose of the substrate (wafer) 3 is also started. In particular, amplifier 7 will be self-optical The signal output by the device 5 and indicating the light intensity is converted into a voltage signal. The V/F converter 9 converts the voltage signal into a pulse train. The pulse counter 11 counts the pulse waves of the pulse train.
於步驟S205,控制器13讀取脈波計數器11所提供之計數,且決定該計數是否與存於上述的記憶體之目標劑量所決定的脈波計數一致。步驟S205被重複直到脈波計數器11所提供的計數與目標劑量曝光所決定的脈波計數一致。當該兩個計數一致時,控制器13使過程前進至步驟S206。In step S205, the controller 13 reads the count provided by the pulse counter 11 and determines whether the count coincides with the pulse count determined by the target dose stored in the memory. Step S205 is repeated until the count provided by the pulse counter 11 coincides with the pulse count determined by the target dose exposure. When the two counts coincide, the controller 13 advances the process to step S206.
於步驟S206,控制器13將光閥關閉指令傳送至光閥驅動電路14以關閉光閥4。In step S206, the controller 13 transmits a light valve closing command to the light valve driving circuit 14 to close the light valve 4.
圖7為顯示低劑量模式的曝光順序之流程圖。於步驟S302,控制器13決定作為處理目標的基板是否為低速曝光模式之曝光目標。作為低速曝光模式之曝光目標的基板典型地為該批的至少一前導基板。依據例如經由輸入/輸出裝置15輸入之資訊可決定哪一基板應為低速曝光模式之曝光的目標基板。此外,哪一基板應為低速曝光模式之曝光的目標基板可遵照資訊預先設定值作為預設的資訊。作為低速曝光模式之曝光的目標基板,不同於如上述之基板,例如,至少一基板可被選擇以被處理,在曝光設備100的狀態改變後(例如,光源1的操作時間超過參考值)。Figure 7 is a flow chart showing the exposure sequence of the low dose mode. In step S302, the controller 13 determines whether the substrate as the processing target is the exposure target of the low-speed exposure mode. The substrate that is the exposure target of the low speed exposure mode is typically at least one leading substrate of the batch. Based on information input via the input/output device 15, for example, it is possible to determine which substrate should be the target substrate for exposure in the low speed exposure mode. In addition, the target substrate on which substrate should be exposed in the low-speed exposure mode can follow the information preset value as the preset information. As the target substrate for exposure in the low-speed exposure mode, unlike the substrate as described above, for example, at least one substrate may be selected to be processed after the state of the exposure apparatus 100 is changed (for example, the operation time of the light source 1 exceeds a reference value).
當待處理的基板係低速曝光的目標基板時,控制器13使過程前進至步驟S303。如果不是,控制器13使過程前 進至步驟S304。When the substrate to be processed is the target substrate of the low speed exposure, the controller 13 advances the process to step S303. If not, the controller 13 makes the process before Proceed to step S304.
圖8為顯示低速曝光模式(第一曝光模式)的曝光順序之流程圖。注意到,拍攝數(N)在圖8所示的過程的開始被初始化為1。Fig. 8 is a flow chart showing the exposure sequence of the low speed exposure mode (first exposure mode). Note that the number of shots (N) is initialized to 1 at the beginning of the process shown in FIG.
於步驟S402,控制器13使進入基板之光的強度減至第一光強度。係可能以作為減小光強度的方法、沿著光軸改變光源1的位置的方法或中性濾光器將插在光源及光罩之間的方法,如以上所述,基於來自曝光量感知器S之輸出而關閉光閥4來減小光的強度,使得目標劑量可被實現。In step S402, the controller 13 reduces the intensity of light entering the substrate to the first light intensity. The method of changing the position of the light source 1 along the optical axis or the method of inserting the neutral light filter between the light source and the reticle, as described above, based on the exposure from the exposure amount The output of the device S is turned off to close the light valve 4 to reduce the intensity of the light so that the target dose can be achieved.
在光閥4保持開啟達一足夠期間之後,控制器13基於來自低速曝光模式的輸出將光閥關閉指令傳送至光閥驅動電路14以關閉光閥4。以此方法,基板可以以近似的劑量曝光。After the light valve 4 remains open for a sufficient period of time, the controller 13 transmits a light valve close command to the light valve drive circuit 14 based on the output from the low speed exposure mode to close the light valve 4. In this way, the substrate can be exposed in an approximate dose.
於步驟S403,控制器13將目標曝光量決定單元16所提供之目標劑量儲存於記憶體。於步驟S404,控制器13將光閥開啟指令傳送至光閥驅動電路14以開啟光閥4。In step S403, the controller 13 stores the target dose supplied from the target exposure amount determining unit 16 in the memory. In step S404, the controller 13 transmits a light valve opening command to the light valve driving circuit 14 to open the light valve 4.
於步驟S405,光閥4開啟,且光源1所產生之照明光照亮光罩2以啟動基板3的曝光。放大器7將自光學感知器5且指示光強度而輸出之信號轉換成電壓信號。V/F轉換器9將電壓信號轉換成脈波連列。脈波計數器11計算脈波連列的脈波。In step S405, the light valve 4 is turned on, and the illumination light generated by the light source 1 illuminates the mask 2 to activate the exposure of the substrate 3. The amplifier 7 converts the signal output from the optical sensor 5 and indicating the light intensity into a voltage signal. The V/F converter 9 converts the voltage signal into a pulse train. The pulse counter 11 calculates the pulse wave of the pulse train.
於步驟S406,控制器13讀取曝光量感知器S的脈波 計數器11所提供之計數,且決定該計數是否與存於上述的記憶體之目標劑量所決定之脈波計數一致。步驟S406被重複直到脈波計數器11所提供的計數與目標劑量決定之脈波計數一致。當該二計數一致時,控制器13使該過程前進至步驟S407。In step S406, the controller 13 reads the pulse wave of the exposure amount sensor S The count provided by the counter 11 determines whether the count coincides with the pulse count determined by the target dose stored in the memory. Step S406 is repeated until the count provided by the pulse counter 11 coincides with the pulse count determined by the target dose. When the two counts coincide, the controller 13 advances the process to step S407.
於步驟S407,控制器13將光閥關閉指令傳送至光閥驅動電路14以關閉光閥4。尤其,控制器13基於曝光量感知器S的脈波計數器11所提供之計數來控制關閉光閥4之時序。In step S407, the controller 13 transmits a light valve close command to the light valve drive circuit 14 to close the light valve 4. In particular, the controller 13 controls the timing of closing the light valve 4 based on the count provided by the pulse counter 11 of the exposure amount sensor S.
步驟S408中,控制器13將自光閥開啟指令(步驟S404)至光閥關閉指令(步驟S407)所需的時序儲存於作為光閥開啟時間(ShutterOpenTime)的記憶體。In step S408, the controller 13 stores the timing required from the light valve opening command (step S404) to the light valve closing command (step S407) in the memory as the light valve opening time (ShutterOpenTime).
於步驟S409,控制器13基於存於步驟S403的目標劑量(TargetDose)及存於步驟S408的光閥開啟時間(ShutterOpenTime)而依據方程式(1)計算校正係數(校正資訊)。於步驟S410,控制器13將作為第二校正係數(Coef2(N))之所計算校正係數(包括作為配置變數的拍攝數(N))儲存於記憶體。In step S409, the controller 13 calculates a correction coefficient (correction information) according to the equation (1) based on the target dose (TargetDose) stored in step S403 and the shutter open time (ShutterOpenTime) stored in step S408. In step S410, the controller 13 stores the calculated correction coefficient (including the number of shots (N) as the configuration variable) as the second correction coefficient (Coef2(N)) in the memory.
Coef2(N)=ShutterOpenTime×TimeDoseConst/TargetDose(1)Coef2(N)=ShutterOpenTime×TimeDoseConst/TargetDose(1)
其中N係拍攝數,TargetDose係目標劑量〔J/m2 〕,以及ShutterOpenTime係光閥開啟時間〔S〕。且 TimeDoseConst係比例常數〔J/m2 .S〕,及Coef2(N)係第二校正係數。Among them, the N-number of shots, the TargetDose target dose [J/m 2 ], and the ShutterOpenTime light valve open time [S]. And TimeDoseConst is a proportional constant [J/m 2 . S], and Coef2(N) are the second correction factor.
於步驟S411,控制器13決定所有拍攝區是否已接受曝光。如果否,控制器13使拍攝數(N)的遞增1且使過程回到步驟S404。In step S411, the controller 13 determines whether all of the shooting zones have accepted the exposure. If not, the controller 13 increments the number of shots (N) by one and returns the process to step S404.
當低速曝光模式的曝光針對複數基板時,為該複數基板的每一者所獲得之第二校正係數被計算(藉由例如,機構計算),且用於高速曝光模式之第二校正係數可基於計算結果而獲得。When the exposure of the low speed exposure mode is for a plurality of substrates, the second correction coefficient obtained for each of the plurality of substrates is calculated (by, for example, a mechanism calculation), and the second correction coefficient for the high speed exposure mode may be based on Obtained by calculating the result.
圖9係顯示高速曝光模式的曝光順序之流程圖。注意到,曝光目標的拍攝數(N)在圖9所示之過程的開始起始於1。Fig. 9 is a flow chart showing the exposure sequence of the high speed exposure mode. Note that the number of shots (N) of the exposure target starts at 1 at the beginning of the process shown in FIG.
於步驟S501,控制器13檢查進入基板之光的強度是否具有第二光強度(典型為最大光強度)。如果否,控制器13使光強度恢復至第二光強度。In step S501, the controller 13 checks whether the intensity of the light entering the substrate has a second light intensity (typically the maximum light intensity). If not, the controller 13 restores the light intensity to the second light intensity.
於步驟S502,控制器13將目標曝光量決定單元16所提供之目標劑量存於記憶體。於步驟S503,控制器13獲得存於記憶體之第一校正係數Coef1(N-1),以為第N拍曝光的目的。第一校正係數Coef1(N-1)將於後描述。In step S502, the controller 13 stores the target dose provided by the target exposure amount determining unit 16 in the memory. In step S503, the controller 13 obtains the first correction coefficient Coef1(N-1) stored in the memory for the purpose of the Nth exposure. The first correction coefficient Coef1(N-1) will be described later.
於步驟S504,控制器13計算最後目標劑量(FinalDose)基於第一校正係數Coef1(N-1)、第二校正係數Coef2(N)及目標劑量(TargetDose)而依據方程式(2)。注意到,Coef1(0)可以是隱含值。In step S504, the controller 13 calculates a final target dose (FinalDose) based on the first correction coefficient Coef1 (N-1), the second correction coefficient Coef2 (N), and the target dose (TargetDose) according to the equation (2). Note that Coef1(0) can be an implicit value.
FinalDose=TargetDose×Coef1(N-1)×Coef2(N)………(2)FinalDose=TargetDose×Coef1(N-1)×Coef2(N).........(2)
其中N係拍攝數,TargetDose係目標劑量〔J/m2 〕,FinalDose係最後目標劑量〔J/m2 〕,Coef1(N-1)係第一校正係數,以及Coef2(N)係第二校正係數。Among them, N series, TargetDose target dose [J/m 2 ], FinalDose final target dose [J/m 2 ], Coef1 (N-1) first correction coefficient, and Coef2 (N) second correction coefficient.
於步驟S505,控制器13基於最後目標劑量(FinalDose)來計算光閥4的旋轉速度。光閥4的旋轉速度可藉由參照存於記憶體且指示目標劑量及光閥4的旋轉速度間之關係的近似方程式或資料表所獲得,如參照圖3所述。於圖3所示的實例,假設最後目標劑量係D1,光閥4的對應旋轉速度係R1。In step S505, the controller 13 calculates the rotational speed of the light valve 4 based on the final target dose (FinalDose). The rotational speed of the light valve 4 can be obtained by referring to an approximate equation or a data sheet stored in the memory and indicating the relationship between the target dose and the rotational speed of the light valve 4, as described with reference to FIG. In the example shown in FIG. 3, assuming the final target dose system D1, the corresponding rotational speed of the light valve 4 is R1.
於步驟S506,控制器13將光閥旋轉指令傳送至光閥驅動電路14以旋轉光閥4在步驟S505中所獲得之旋轉速度,藉此旋轉光閥4。In step S506, the controller 13 transmits a light valve rotation command to the light valve drive circuit 14 to rotate the rotation speed of the light valve 4 obtained in step S505, thereby rotating the light valve 4.
於步驟S507,光閥4開啟,且光源1所產生的照明光照亮光罩2以啟動基板3的曝光。放大器7將自光學感知器5且指示光強度所輸出之信號轉換成電壓信號。V/F轉換器9將電壓信號轉換成脈波連列。脈波計數器11計數脈波連列的脈波。In step S507, the light valve 4 is turned on, and the illumination light generated by the light source 1 illuminates the mask 2 to activate the exposure of the substrate 3. The amplifier 7 converts the signal output from the optical sensor 5 and indicating the light intensity into a voltage signal. The V/F converter 9 converts the voltage signal into a pulse train. The pulse counter 11 counts the pulse waves of the pulse train.
於步驟S508,控制器13基於光閥旋轉速度等待當光閥4完全關閉之時序。其後,於步驟S509,控制器13結束脈波計數器11的計數操作。注意到,於高速曝光模式(第二曝光模式)中,控制第N拍攝區的劑量之光閥4的操作於第N拍攝區的曝光期間不會依賴曝光量感知器S的 輸出(或計數操作)。In step S508, the controller 13 waits for the timing when the light valve 4 is completely closed based on the light valve rotation speed. Thereafter, in step S509, the controller 13 ends the counting operation of the pulse wave counter 11. It is noted that in the high-speed exposure mode (second exposure mode), the operation of the light valve 4 that controls the dose of the Nth shot region does not depend on the exposure amount sensor S during the exposure of the Nth shot region. Output (or counting operation).
於步驟S510,控制器13自步驟S507及步驟S509間所計數之脈波的數目來計算實際劑量(MeasureResult)。於步驟S510,控制器13亦計算第一校正係數(Coef1)依據方程式(3)自實際劑量(MeasureResult)及最後目標劑量FinalDose。於步驟S510中獲得之第一校正係數(Coef1(N))被使用於計算下一拍攝的最後劑量TargetDose,亦即,第(N+1)拍攝。In step S510, the controller 13 calculates the actual dose (MeasureResult) from the number of pulse waves counted between step S507 and step S509. In step S510, the controller 13 also calculates a first correction coefficient (Coef1) according to equation (3) from the actual dose (MeasureResult) and the final target dose FinalDose. The first correction coefficient (Coef1(N)) obtained in step S510 is used to calculate the last shot TargetDose of the next shot, that is, the (N+1)th shot.
Coef1(N)=1/{MeasureResult/TargetDose} (3)Coef1(N)=1/{MeasureResult/TargetDose} (3)
其中N係拍攝數,MeasureResult係實際劑量[J/m2 ],TargetDose係目標劑量[J/m2 ]。Among them, N is the number of shots, MeasureResult is the actual dose [J/m 2 ], and TargetDose is the target dose [J/m 2 ].
於步驟S511,控制器13將步驟S510計算出的值以Coef1(N)儲存於與拍攝數(N)有關之記憶體中。In step S511, the controller 13 stores the value calculated in step S510 in Coef1(N) in the memory associated with the number of shots (N).
於步驟S512,控制器13決定所有拍攝區是否已接受曝光。如果否,控制器13使拍攝數(N)的遞增1且使過程回到步驟S503。In step S512, the controller 13 determines whether all of the shooting zones have accepted the exposure. If not, the controller 13 increments the number of shots (N) by one and returns the process to step S503.
於以上解說,用於曝光目標的第N拍攝區之最後目標劑量係基於第一校正係數來計算,第一校正係數可藉由已接受曝光之第N-1拍攝區的曝光所獲得。另外,用於第N拍攝區之最後目標劑量可基於用於接近例如,第N拍攝區的拍攝區之第一校正係數來計算。As explained above, the last target dose of the Nth shot region for the exposure target is calculated based on the first correction coefficient, which can be obtained by exposure of the N-1th shot region that has received the exposure. Additionally, the last target dose for the Nth shot region may be calculated based on a first correction factor for approaching, for example, the shot region of the Nth shot region.
方程式(1)、(2)及(3)係計算方法的實例。其 它方程式可被使用以取代這些方程式。而且,為每一曝光設備所決定之偏移係數或依據曝光過程條件所決定之偏移係數可被考慮。Equations (1), (2), and (3) are examples of calculation methods. its Its equations can be used to replace these equations. Moreover, the offset coefficient determined for each exposure device or the offset coefficient determined according to the exposure process conditions can be considered.
在校正光閥的分隔誤差分量時,使用緊接前一拍攝的校正係數的方法係有利的。在校正依照晶圓狀態或過程所產生之誤差分量時,使用附近拍攝的校正係數的方法係有利的。In correcting the separation error component of the light valve, it is advantageous to use a method of correcting the correction factor taken immediately before. The method of using a correction factor taken nearby is advantageous when correcting the error component produced in accordance with the state or process of the wafer.
依據本發明的較佳實施例,例如,於低速曝光模式(第一曝光模式),關閉光閥之時序係基於來自曝光量感知器的輸出而控制的,且基於光閥開啟時間所獲得之校正資訊被儲存。於高速曝光模式(第二曝光模式),光閥的操作為基於校正資訊而控制。結果,高輸貫量可藉由高速曝光模式而獲得,且準確曝光量控制亦基於於低速曝光模式所獲得之校正資訊而達到於高速曝光模式。According to a preferred embodiment of the present invention, for example, in the low speed exposure mode (first exposure mode), the timing of turning off the light valve is based on the output from the exposure sensor and is corrected based on the light valve opening time. Information is stored. In the high speed exposure mode (second exposure mode), the operation of the light valve is controlled based on the correction information. As a result, the high throughput can be obtained by the high speed exposure mode, and the accurate exposure amount control is also achieved in the high speed exposure mode based on the correction information obtained in the low speed exposure mode.
用於每一拍攝區之校正資訊的計算可抑制拍攝區間之劑量變化。用於基板的周圍部上的拍攝區之劑量傾向不準確。特別地,不規則狀拍攝區(非矩形拍攝區)。此實施例亦致能此種拍攝區的準確曝光。The calculation of the correction information for each shooting zone can suppress the dose variation of the shooting interval. The dose for the shot area on the peripheral portion of the substrate tends to be inaccurate. In particular, an irregularly shaped shooting zone (non-rectangular shooting zone). This embodiment also enables accurate exposure of such a shooting zone.
現將說明利用以上曝光設備之裝置製造方法。圖10為顯示整個半導體裝置製程的程序之流程圖。於步驟1(電路設計),半導體裝置的電路被設計。於步驟2(光罩製作),光罩(亦稱為原形或掩膜)係基於所設計電路圖案而製作。於步驟3(晶圓製造),晶圓(亦稱為基板)係使用諸如矽的材料而製造。於稱為預處理之步驟4(晶 圓過程),實際電路係使用上述的光罩及晶圓藉由微影術形成在晶圓上。稱為後處理之下一步驟5(組裝)係藉由使用製作於步驟4的晶圓而形成半導體晶片的步驟。此步驟包括諸如組裝過程(切割及接合)及封裝過程(晶片封包)之處理。於步驟6(檢查),諸如製作於步驟5之半導體裝置的操作檢查測試及耐久性測試之檢查被實施。半導體裝置係藉由這些步驟而完成然後運送(步驟7)。圖11為顯示晶圓過程的詳細程序之流程圖。於步驟11(氧化),晶圓的表面被氧化。步驟12(CVD),絕緣膜係形成在晶圓表面上。步驟13(電極形成),電極係藉由沉積而形成在晶圓上。步驟14(離子植入),離子被植入晶圓。步驟15(CMP),絕緣膜係藉由CMP而平面化。於步驟16(抗蝕過程),光敏劑被施加至晶圓。步驟17(曝光),上述之曝光設備使以光敏劑塗佈之晶圓經由具有電路圖案的掩膜而曝光,以形成潛在影像圖案在抗蝕劑上。步驟18(顯影),形成在晶圓上的抗蝕劑之潛在影像圖案被顯影以形成抗蝕圖案。步驟19(蝕刻),在抗蝕圖案下方的層或基板係經由抗蝕圖案的開口而蝕刻。步驟20(抗蝕移除),在蝕刻後留下的任何無需抗蝕劑被移除。這些步驟被重複以形成多層電路圖案在晶圓上。A method of manufacturing a device using the above exposure apparatus will now be described. Figure 10 is a flow chart showing the procedure of the entire semiconductor device process. In step 1 (circuit design), the circuit of the semiconductor device is designed. In step 2 (mask manufacturing), a photomask (also known as a prototype or mask) is fabricated based on the designed circuit pattern. In step 3 (wafer fabrication), the wafer (also referred to as the substrate) is fabricated using a material such as tantalum. In step 4 called pretreatment (crystal Circle process), the actual circuit is formed on the wafer by lithography using the reticle and wafer described above. A step 5 (assembly), referred to as post-processing, is a step of forming a semiconductor wafer by using the wafer fabricated in step 4. This step includes processing such as assembly processes (cutting and bonding) and packaging processes (wafer packaging). In step 6 (inspection), an inspection such as an operation inspection test and an durability test of the semiconductor device fabricated in the step 5 is carried out. The semiconductor device is completed by these steps and then transported (step 7). Figure 11 is a flow chart showing the detailed procedure of the wafer process. In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the surface of the wafer. In step 13 (electrode formation), the electrodes are formed on the wafer by deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (CMP), the insulating film is planarized by CMP. In step 16 (resist process), a photosensitizer is applied to the wafer. In step 17 (exposure), the exposure apparatus described above exposes the wafer coated with the photosensitizer through a mask having a circuit pattern to form a latent image pattern on the resist. In step 18 (development), the latent image pattern of the resist formed on the wafer is developed to form a resist pattern. In step 19 (etching), the layer or substrate under the resist pattern is etched through the opening of the resist pattern. Step 20 (resist removal), any unwanted photoresist left after etching is removed. These steps are repeated to form a multilayer circuit pattern on the wafer.
雖然已參照示範性實施例說明本發明,將瞭解到,本發明未受限於所揭示的示範性實施例。以下請求項的範圍將符合最寬廣詮釋以含蓋所有此種修改以及等效結構與功能。While the invention has been described in detail with reference to the exemplary embodiments, it is understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation to cover all such modifications and equivalent structures and functions.
S‧‧‧曝光量感知器S‧‧‧Exposure Sensor
B‧‧‧遮光部B‧‧‧Lighting Department
A‧‧‧遮光部A‧‧‧Lighting Department
N‧‧‧拍攝數N‧‧‧Number of shots
1‧‧‧光源1‧‧‧Light source
2‧‧‧光罩2‧‧‧Photomask
3‧‧‧基板(晶圓)3‧‧‧Substrate (wafer)
4‧‧‧光閥4‧‧‧Light valve
5‧‧‧光學感知器5‧‧‧ Optical Sensor
6‧‧‧投影光學系統6‧‧‧Projection optical system
7‧‧‧放大器7‧‧Amplifier
9‧‧‧V/F轉換器9‧‧‧V/F converter
11‧‧‧脈波計數器11‧‧‧ Pulse counter
13‧‧‧控制器13‧‧‧ Controller
14‧‧‧光閥驅動電路14‧‧‧Light valve drive circuit
15‧‧‧輸入/輸出裝置(控制台)15‧‧‧Input/output devices (console)
16‧‧‧目標曝光量決定單元16‧‧‧Target exposure determination unit
21‧‧‧光罩載台21‧‧‧Photomask stage
22‧‧‧基板載台22‧‧‧Substrate stage
81‧‧‧光閥板81‧‧‧Light valve plate
86‧‧‧光學路徑區86‧‧‧ Optical path area
100‧‧‧曝光設備100‧‧‧Exposure equipment
圖1為顯示依據本發明的較佳實施例之曝光設備的簡要配置之示意圖;圖2A、2B及2C為藉由光閥操作而解說曝光控制之示意圖;圖3為解說目標劑量及光閥的旋轉速度間的關係之曲線圖;圖4為解說布局於基板上的拍攝之示意圖;圖5為顯示在執行曝光順序之前之曝光設備中的決定過程之流程圖;圖6為顯示高劑量模式的曝光順序之流程圖;圖7為顯示低劑量模式的曝光順序之流程圖;圖8為顯示低速曝光模式(第一曝光模式)的曝光順序之流程圖;圖9為顯示高速曝光模式的曝光順序之流程圖;圖10為顯示整個半導體裝置製程的程序之流程圖;及圖11為顯示晶圓過程的詳細程序之流程圖。1 is a schematic view showing a schematic configuration of an exposure apparatus according to a preferred embodiment of the present invention; FIGS. 2A, 2B and 2C are schematic diagrams illustrating exposure control by operation of a light valve; FIG. 3 is a view illustrating a target dose and a light valve; A graph showing the relationship between the rotational speeds; FIG. 4 is a schematic diagram illustrating the photographing on the substrate; FIG. 5 is a flow chart showing the decision process in the exposure apparatus before the exposure sequence is performed; and FIG. 6 is a view showing the high dose mode. Flow chart of exposure sequence; FIG. 7 is a flow chart showing the exposure sequence of the low dose mode; FIG. 8 is a flow chart showing the exposure sequence of the low speed exposure mode (first exposure mode); and FIG. 9 is a display sequence showing the exposure mode of the high speed exposure mode. FIG. 10 is a flow chart showing a procedure of the entire semiconductor device process; and FIG. 11 is a flow chart showing a detailed procedure of the wafer process.
1‧‧‧光源1‧‧‧Light source
2‧‧‧光罩2‧‧‧Photomask
3‧‧‧基板3‧‧‧Substrate
4‧‧‧光閥4‧‧‧Light valve
5‧‧‧光學感知器5‧‧‧ Optical Sensor
6‧‧‧投影光學系統6‧‧‧Projection optical system
7‧‧‧放大器7‧‧Amplifier
9‧‧‧V/F轉換器9‧‧‧V/F converter
11‧‧‧脈波計數器11‧‧‧ Pulse counter
13‧‧‧控制器13‧‧‧ Controller
14‧‧‧光閥驅動電路14‧‧‧Light valve drive circuit
15‧‧‧輸入/輸出裝置15‧‧‧Input/output devices
16‧‧‧目標曝光量決定單元16‧‧‧Target exposure determination unit
21‧‧‧光罩載台21‧‧‧Photomask stage
22‧‧‧基板載台22‧‧‧Substrate stage
100‧‧‧曝光設備100‧‧‧Exposure equipment
S‧‧‧曝光量感知器S‧‧‧Exposure Sensor
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