TWI383415B - 儲存電能的元件 - Google Patents

儲存電能的元件 Download PDF

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TWI383415B
TWI383415B TW096136975A TW96136975A TWI383415B TW I383415 B TWI383415 B TW I383415B TW 096136975 A TW096136975 A TW 096136975A TW 96136975 A TW96136975 A TW 96136975A TW I383415 B TWI383415 B TW I383415B
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magnetic
barrier
electrical energy
sheets
semiconductor
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TW200910395A (en
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James Chyi Lai
Allen Agan Tom
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Northern Lights Semiconductor
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H01F27/36—Electric or magnetic shields or screens
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H01G4/306—Stacked capacitors made by thin film techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

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Description

儲存電能的元件
本發明是有關於一種儲存電能的元件，且特別是有關於一種藉由磁性材料儲存電能的元件。
儲存能量的零件對我們的生活相當重要，例如電路中的電容器，可攜式電子裝置中的電池，儲存電能的零件影響電子裝置的效能以及工作時間。
然而，傳統儲存電能的零件有些毛病，例如電容器有漏電流的問題，造成電容器效能低落；而電池在充放電的時候，會有記憶效應，造成電池效能低落。
巨磁阻效應(The Giant Magnetoresistance Effect)是一種量子物理的效應。在兩片磁性材料夾住一片非磁性材料的結構中觀察巨磁阻效應，其係為電阻值隨磁場變化而改變，當兩片磁性材料磁化方向相同時，電阻較小；當兩片磁性材料磁化方向相反時，電阻較大。
因此，巨磁阻效應可用做絕緣體，並提供較佳的效能。元件可用巨磁阻效應來儲存電能。然而元件尺寸愈做愈小，必須在有限的面積內增加電容值。
基於上述的原因，需要一種利用巨磁阻效應的元件，用來儲存電能以及提高電容值。
本發明的目的就是在提供一種利用巨磁阻效應的元件，用來儲存電能。
依照本發明一較佳實施例，該元件包含：一第一磁性片、一第二磁性片與一半導體片，該半導體片夾在第一磁性片與第二磁性片之間，其中半導體片與第一、第二磁性片之間的接面形成二極體之位障以防止電流由第一磁性片導通至第二磁性片，並藉此儲存電能。
依照本發明另一較佳實施例，該元件包含：複數個磁性片與複數個半導體片，該些半導體片夾在該些磁性片之間，其中每一半導體片與該些磁性片之間的接面形成二極體之位障以防止該些磁性片之間有電流導通，並藉此儲存電能。
二極體之位障如同高介電常數的介電值，大約為一般介電值的5到9倍。因為電容值與介電常數成正比，所以，在儲存電能的裝置中，提高介電常數即可增加電容值。
依照本發明又一較佳實施例，藉由減少半導體片的厚度來增加電容值。因為第一磁性片與第二磁性片間隔的距離與電容值成反比，所以，在儲存電能的裝置中，減少半導體片的厚度即可增加電容值。
此外，接面面積與電容值成正比，粗糙的接面使得接面面積變大，所以，在儲存電能的裝置中，藉由粗糙的接面來增加電容值。
以下將以一實施例對上述之說明以及接下來的實施方式做詳細的描述，並對本發明提供更進一步的解釋。
以下為本發明之圖式及各種實施例，圖式中相同之號碼代表相同之物件。
第1圖是依照本發明第一較佳實施例的一種儲存電能元件的剖面圖。元件100用來儲存電能，包含：一第一磁性片110、一第二磁性片120與一半導體片130，該半導體片130夾在第一磁性片110與第二磁性片120之間，其中第一磁性片110、第二磁性片120與半導體片130可為薄膜；半導體片130以半導體材料製成；半導體片130與第一、第二磁性片的接面140，形成二極體之位障150。第1A圖是元件100的等效電路圖，二極體之位障150防止電流由第一磁性片110導通至第二磁性片120，並藉此儲存電能。
二極體之位障可為蕭基二極體之位障150，其具有整流特性，當小順向偏壓施於蕭基二極體之位障150，而蕭基二極體仍處於截止狀態，此時小順向偏壓小於二極體之位障，其中截止狀態防止第一磁性片110與第二磁性片120之間有電流導通。由於二極體之位障150具有防止電流導通的特性，使得半導體片130具有介電質的特性。第一磁性片110與第二磁性片120提供一磁場，作用於半導體片130，使二極體之位障150有更佳的介電質特性。該磁場就像扮演一個強行阻止電荷從半導體片130逃跑的角色，因此磁場增加二極體之位障150的絕緣能力。一材料的絕緣能力與該材料的介電常數相關，其中介電常數與電容值的關係，用公式(1)可表示成：
其中，C代表元件的電容值，e0 代表真空中的介電常數，第一磁性片110與第二磁性片120之間的材料的相對介電常數以ek 表示，A代表接面面積，r代表第一磁性片110與第二磁性片120之間的距離。由公式(1)可知，假如第一磁性片110與第二磁性片120之間的材料的相對介電常數增加，使電容值隨之增加。如此一來，藉由二極體之位障與磁場增加絕緣能力，使得半導體片130的介電常數大於一般介電值的介電常數，其中半導體片130的介電常數是一般介電值的介電常數的5到9倍。
本發明提供兩個方法，用來增加元件100的電容值。首先說明第一個方法，由公式(1)可知，假如第一磁性片110與第二磁性片120之間的距離縮短，可增加電容值。因此，縮小薄膜半導體片130的厚度，使得元件100的電容值增加。舉例來說，半導體片130的厚度降至30埃以下時，其電容值遠大於典型電容器的電容值，其中典型電容器之半導體片130的厚度在毫米等級。當厚度降至30埃以下時，用泰勒級數展開法對電容值的變化進行分析，其中二次方項或三次方項指出元件100的崩潰電壓降低，因此，電容值與崩潰電壓之間，必須做出取捨，否則縮小半導體片130的厚度，將會造成崩潰電壓降低。
接著首先說明第二個方法，由公式(1)可知，電容值正比於接面面積。當第一磁性片110、第二磁性片120與半導體片130之間的接面不平坦時，使得接面140的面積增加，其係由於粗操表面的有效面積大於平坦表面的有效面積，並藉此增加電容值。
依照本發明第二較佳實施例，元件100堆疊成多層平行排列的元件200，用來儲存電能。請參照第2圖，元件200包含：複數個磁性片202與複數個半導體片204，該些半導體片204夾在該些磁性片202之間，每個接面206並聯產生大電容值。類似本發明第一較佳實施例中，每一半導體片與該些磁性片的接面206之間形成二極體之位障以防止該些磁性片之間有電流導通，元件200藉此儲存電能。
本發明的目的就是在提供一種元件，用來儲存電能。該元件的電容值大於標準電容器的電容值，在許多應用方面，該元件可以當做電池，且充放電的速度比正規的電池還快。該元件不像電池一樣受到記憶效應的限制，該元件在每次充電前，不管是完全放電或不完全放電都不會造成電容量在實質的表現上減少，因此該元件與正規的電池相比，該元件可連續進行多次充放電。最後，該元件以磁性材料製成，因此電池的散熱問題不在本發明實施例的討論範圍內。
雖然本發明已以一較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100．．．元件
110．．．第一磁性片
120．．．第二磁性片
130．．．半導體片
140．．．接面
150．．．二極體之位障
200．．．元件
202．．．磁性片
204．．．半導體片
206．．．接面
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂，所附圖式之詳細說明如下：第1圖係繪示依照本發明第一較佳實施例的一種儲存電能元件的剖面圖。
第1A圖代表一半導體片與第一、第二磁性片之間的接面形成二極體之位障的等效電路圖。
第2圖係繪示依照本發明第二較佳實施例的一種儲存電能元件的剖面圖。
140．．．接面
150．．．二極體之位障

Claims (2)

  1. 一種儲存電能的元件，包含：一第一磁性片；一第二磁性片；以及一半導體片夾在第一磁性片與第二磁性片之間，其中該半導體片由半導體材料所製成的薄膜，該薄膜的厚度小於30埃；其中該半導體片與該第一、該第二磁性片之間的一接面形成一蕭基二極體之位障，以防止電流由該第一磁性片導通至該第二磁性片，並藉此儲存電能，其中該第一磁性片為一薄膜，該第二磁性片為一薄膜，該接面有一不平坦表面，其中一偏壓施於該蕭基二極體之位障，且該偏壓小於一導通電壓，當磁場應用在該蕭基二極體之位障，則該蕭基二極體之位障儲存電能。
  2. 一種儲存電能的元件，包含：複數個磁性片；以及複數個半導體片夾在該些磁性片之間，其中每一該半導體片由半導體材料所製成的薄膜，該薄膜的厚度小於30埃；其中每一個該些半導體片與該些磁性片之間的複數個接面形成一蕭基二極體之位障，以防止該些磁性片之間有電流導通，並藉此儲存電能，其中每一該第一磁性片為一薄膜，每一該第二磁性片為一薄膜，每一該接面有一不平 坦表面，其中一偏壓施於該蕭基二極體之位障，且該偏壓小於一導通電壓，當磁場應用在該蕭基二極體之位障，則該蕭基二極體之位障儲存電能。
TW096136975A 2007-08-21 2007-10-02 儲存電能的元件 TWI383415B (zh)

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090095338A1 (en) * 2007-10-11 2009-04-16 James Chyl Lai Solar power source
JP4996775B1 (ja) 2011-08-18 2012-08-08 幹治 清水 薄膜キャパシタ装置
US20140042270A1 (en) * 2012-08-09 2014-02-13 Northern Lights Semiconductor Corp. Storage system for storing static electrical energy in atmosphere
US9263189B2 (en) 2013-04-23 2016-02-16 Alexander Mikhailovich Shukh Magnetic capacitor
US20150013746A1 (en) * 2013-07-10 2015-01-15 Alexander Mikhailovich Shukh Photovoltaic System with Embedded Energy Storage Device
WO2015050982A1 (en) 2013-10-01 2015-04-09 E1023 Corporation Magnetically enhanced energy storage system and methods
CN105071545A (zh) * 2015-08-05 2015-11-18 国润金华（北京）国际能源投资有限公司 一种量子物理蓄电池及其制备方法
CN107332355B (zh) * 2017-05-26 2018-09-07 卓磁（上海）实业发展有限公司 一种磁能芯片储存电能的方法
US10734640B2 (en) * 2018-03-16 2020-08-04 Polymorph Quantum Energy Non-chemical electric battery using two-phase working material

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3962713A (en) * 1972-06-02 1976-06-08 Texas Instruments Incorporated Large value capacitor
US5432373A (en) * 1992-12-15 1995-07-11 Bell Communications Research, Inc. Magnetic spin transistor
US6178112B1 (en) * 1998-05-13 2001-01-23 Sony Corporation Element exploiting magnetic material and addressing method therefor
TW429637B (en) * 1999-12-17 2001-04-11 Synergy Scientech Corp Electrical energy storage device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2337590A1 (de) * 1973-07-24 1975-02-20 Siemens Ag Varaktordiode
JPS57103368A (en) * 1980-12-18 1982-06-26 Clarion Co Ltd Variable-capacitance device
EP0603836B1 (en) * 1992-12-24 1998-05-20 Mitsubishi Chemical Corporation Process for preparing a catalyst useful for producing a nitrile
DE4326999A1 (de) * 1993-08-11 1995-02-16 Siemens Ag Vorrichtung zum magnetfeldgesteuerten Schalten
JP2001168417A (ja) * 1999-12-10 2001-06-22 Sharp Corp 強磁性トンネル接合素子
JP3604617B2 (ja) * 2000-06-12 2004-12-22 富士通株式会社 磁気検出素子
US6205053B1 (en) * 2000-06-20 2001-03-20 Hewlett-Packard Company Magnetically stable magnetoresistive memory element
US6734136B2 (en) * 2000-09-28 2004-05-11 Rohm And Haas Company IR and/or SM promoted multi-metal oxide catalyst
US6589907B2 (en) * 2000-09-28 2003-07-08 Rohm And Haas Company Zn and/or Ga promoted multi-metal oxide catalyst
US6407280B1 (en) * 2000-09-28 2002-06-18 Rohm And Haas Company Promoted multi-metal oxide catalyst
US6407031B1 (en) * 2000-09-28 2002-06-18 Rohm And Haas Company Promoted multi-metal oxide catalyst
US6642173B2 (en) * 2001-04-25 2003-11-04 Rohm And Haas Company Catalyst
WO2006003639A1 (en) * 2004-07-01 2006-01-12 The Provost Fellows And Scholars Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth Near Dublin Magnetoresistance device
JP5211421B2 (ja) * 2005-08-22 2013-06-12 三菱電機株式会社 カスコード接続回路
JP2008071720A (ja) * 2006-09-15 2008-03-27 Institute Of Physical & Chemical Research バッテリー、バッテリーシステムおよびマイクロ波発信装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3962713A (en) * 1972-06-02 1976-06-08 Texas Instruments Incorporated Large value capacitor
US5432373A (en) * 1992-12-15 1995-07-11 Bell Communications Research, Inc. Magnetic spin transistor
US6178112B1 (en) * 1998-05-13 2001-01-23 Sony Corporation Element exploiting magnetic material and addressing method therefor
TW429637B (en) * 1999-12-17 2001-04-11 Synergy Scientech Corp Electrical energy storage device

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CN101373812A (zh) 2009-02-25
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