TWI378899B - - Google Patents

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Publication number
TWI378899B
TWI378899B TW98119188A TW98119188A TWI378899B TW I378899 B TWI378899 B TW I378899B TW 98119188 A TW98119188 A TW 98119188A TW 98119188 A TW98119188 A TW 98119188A TW I378899 B TWI378899 B TW I378899B
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TW
Taiwan
Prior art keywords
alloy
oxygen
oxide
alloy oxide
entropy
Prior art date
Application number
TW98119188A
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English (en)
Chinese (zh)
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TW201043574A (en
Original Assignee
Nat Univ Chung Hsing
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Publication date
Application filed by Nat Univ Chung Hsing filed Critical Nat Univ Chung Hsing
Priority to TW98119188A priority Critical patent/TW201043574A/zh
Publication of TW201043574A publication Critical patent/TW201043574A/zh
Application granted granted Critical
Publication of TWI378899B publication Critical patent/TWI378899B/zh

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  • Photovoltaic Devices (AREA)
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TW98119188A 2009-06-09 2009-06-09 Optoelectronic semiconductor composed of multicomponent high-entropy alloy oxide and preparing method thereof TW201043574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW98119188A TW201043574A (en) 2009-06-09 2009-06-09 Optoelectronic semiconductor composed of multicomponent high-entropy alloy oxide and preparing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW98119188A TW201043574A (en) 2009-06-09 2009-06-09 Optoelectronic semiconductor composed of multicomponent high-entropy alloy oxide and preparing method thereof

Publications (2)

Publication Number Publication Date
TW201043574A TW201043574A (en) 2010-12-16
TWI378899B true TWI378899B (ja) 2012-12-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW98119188A TW201043574A (en) 2009-06-09 2009-06-09 Optoelectronic semiconductor composed of multicomponent high-entropy alloy oxide and preparing method thereof

Country Status (1)

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TW (1) TW201043574A (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104946912B (zh) * 2015-07-14 2017-04-26 太原理工大学 密排六方结构的稀土高熵合金
CN108359939B (zh) * 2018-03-06 2020-10-13 大连理工大学 一种可变带隙的AlCoCrFeNi高熵合金氧化物半导体薄膜及其制备方法

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Publication number Publication date
TW201043574A (en) 2010-12-16

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