TWI373067B - Substrate processing method and substrate processing device - Google Patents

Substrate processing method and substrate processing device

Info

Publication number
TWI373067B
TWI373067B TW097142892A TW97142892A TWI373067B TW I373067 B TWI373067 B TW I373067B TW 097142892 A TW097142892 A TW 097142892A TW 97142892 A TW97142892 A TW 97142892A TW I373067 B TWI373067 B TW I373067B
Authority
TW
Taiwan
Prior art keywords
substrate processing
processing device
processing method
substrate
processing
Prior art date
Application number
TW097142892A
Other languages
English (en)
Other versions
TW200937497A (en
Inventor
Yuichiro Inatomi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200937497A publication Critical patent/TW200937497A/zh
Application granted granted Critical
Publication of TWI373067B publication Critical patent/TWI373067B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/023—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW097142892A 2007-12-17 2008-11-06 Substrate processing method and substrate processing device TWI373067B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007324454A JP4601079B2 (ja) 2007-12-17 2007-12-17 基板処理方法及び基板処理装置

Publications (2)

Publication Number Publication Date
TW200937497A TW200937497A (en) 2009-09-01
TWI373067B true TWI373067B (en) 2012-09-21

Family

ID=40751837

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097142892A TWI373067B (en) 2007-12-17 2008-11-06 Substrate processing method and substrate processing device

Country Status (4)

Country Link
US (2) US8563230B2 (zh)
JP (1) JP4601079B2 (zh)
KR (1) KR101423783B1 (zh)
TW (1) TWI373067B (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4967004B2 (ja) * 2009-09-14 2012-07-04 東京エレクトロン株式会社 レジスト塗布現像装置およびレジスト塗布現像方法
KR101881894B1 (ko) * 2012-04-06 2018-07-26 삼성디스플레이 주식회사 박막 증착 장치 및 그것을 이용한 박막 증착 방법
JP5726807B2 (ja) * 2012-04-24 2015-06-03 東京エレクトロン株式会社 パターン形成方法、パターン形成装置、及びコンピュータ可読記憶媒体
US9086631B2 (en) 2012-08-27 2015-07-21 Tokyo Electron Limited EUV resist sensitivity reduction
US9373551B2 (en) 2013-03-12 2016-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. Moveable and adjustable gas injectors for an etching chamber
JP6351993B2 (ja) * 2013-03-18 2018-07-04 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP5655895B2 (ja) * 2013-06-05 2015-01-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP5994736B2 (ja) * 2013-06-10 2016-09-21 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
US9063420B2 (en) * 2013-07-16 2015-06-23 Rohm And Haas Electronic Materials Llc Photoresist composition, coated substrate, and method of forming electronic device
KR102233577B1 (ko) * 2014-02-25 2021-03-30 삼성전자주식회사 반도체 소자의 패턴 형성 방법
US10935889B2 (en) * 2015-05-13 2021-03-02 Tokyo Electron Limited Extreme ultra-violet sensitivity reduction using shrink and growth method
US9482957B1 (en) * 2015-06-15 2016-11-01 I-Shan Ke Solvent for reducing resist consumption and method using solvent for reducing resist consumption
JP6373803B2 (ja) * 2015-06-23 2018-08-15 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
KR102099433B1 (ko) * 2018-08-29 2020-04-10 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
US11342204B2 (en) * 2018-12-14 2022-05-24 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Method and apparatus for cleaning semiconductor wafers

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6474986B2 (en) * 1999-08-11 2002-11-05 Tokyo Electron Limited Hot plate cooling method and heat processing apparatus
JP2001257189A (ja) * 2000-03-10 2001-09-21 Yokogawa Electric Corp レジスト除去装置
JP2001255671A (ja) * 2000-03-10 2001-09-21 Uct Kk レジスト膜除去装置及びレジスト膜除去方法
JP3343341B2 (ja) * 2000-04-28 2002-11-11 ティーディーケイ株式会社 微細パターン形成方法及びそれに用いる現像／洗浄装置、及びそれを用いためっき方法、及びそれを用いた薄膜磁気ヘッドの製造方法
JP4290905B2 (ja) 2001-07-10 2009-07-08 Ｎｅｃ液晶テクノロジー株式会社 有機膜の平坦化方法
JP2003142261A (ja) 2001-11-02 2003-05-16 Tdk Corp 有機ｅｌ表示素子の製造方法および有機ｅｌ表示素子
JP2003249474A (ja) * 2002-02-18 2003-09-05 Lam Res Corp 水供給装置および水供給方法
JP2004214388A (ja) * 2002-12-27 2004-07-29 Tokyo Electron Ltd 基板処理方法
WO2004109779A1 (ja) * 2003-06-06 2004-12-16 Tokyo Electron Limited 基板の処理膜の表面荒れを改善する方法及び基板の処理装置
JP4328667B2 (ja) * 2003-06-06 2009-09-09 東京エレクトロン株式会社 基板の処理膜の表面荒れを改善する方法及び基板の処理装置
JP4343018B2 (ja) 2004-04-20 2009-10-14 東京エレクトロン株式会社 基板の処理方法及び基板の処理装置
JP2006049712A (ja) * 2004-08-06 2006-02-16 Sekisui Chem Co Ltd レジスト除去方法及びレジスト除去装置
JP4555729B2 (ja) * 2005-05-17 2010-10-06 積水化学工業株式会社 レジスト除去方法及びレジスト除去装置
JP4466966B2 (ja) * 2007-11-22 2010-05-26 東京エレクトロン株式会社 基板処理装置

Also Published As

Publication number Publication date
KR101423783B1 (ko) 2014-07-25
JP4601079B2 (ja) 2010-12-22
US20130312659A1 (en) 2013-11-28
JP2009147198A (ja) 2009-07-02
US9016231B2 (en) 2015-04-28
TW200937497A (en) 2009-09-01
KR20090065475A (ko) 2009-06-22
US20090152238A1 (en) 2009-06-18
US8563230B2 (en) 2013-10-22

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees