TWI371778B - Process for forming resist pattern, semiconductor device and manufacturing method for the same - Google Patents
Process for forming resist pattern, semiconductor device and manufacturing method for the sameInfo
- Publication number
- TWI371778B TWI371778B TW095149497A TW95149497A TWI371778B TW I371778 B TWI371778 B TW I371778B TW 095149497 A TW095149497 A TW 095149497A TW 95149497 A TW95149497 A TW 95149497A TW I371778 B TWI371778 B TW I371778B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- semiconductor device
- same
- resist pattern
- forming resist
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006222310A JP4724072B2 (ja) | 2006-08-17 | 2006-08-17 | レジストパターンの形成方法、半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200811919A TW200811919A (en) | 2008-03-01 |
TWI371778B true TWI371778B (en) | 2012-09-01 |
Family
ID=38973400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095149497A TWI371778B (en) | 2006-08-17 | 2006-12-28 | Process for forming resist pattern, semiconductor device and manufacturing method for the same |
Country Status (6)
Country | Link |
---|---|
US (1) | US20080044770A1 (zh) |
JP (1) | JP4724072B2 (zh) |
KR (1) | KR100901837B1 (zh) |
CN (1) | CN101126895B (zh) |
DE (1) | DE102007001796B4 (zh) |
TW (1) | TWI371778B (zh) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8852851B2 (en) | 2006-07-10 | 2014-10-07 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
US8501395B2 (en) * | 2007-06-04 | 2013-08-06 | Applied Materials, Inc. | Line edge roughness reduction and double patterning |
US20090017401A1 (en) * | 2007-07-10 | 2009-01-15 | Shinichi Ito | Method of forming micropattern |
US7989307B2 (en) * | 2008-05-05 | 2011-08-02 | Micron Technology, Inc. | Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same |
TWI384334B (zh) * | 2008-05-13 | 2013-02-01 | Macronix Int Co Ltd | 烘烤裝置、烘烤的方法及縮小間隙的方法 |
US8367981B2 (en) | 2008-05-15 | 2013-02-05 | Macronix International Co., Ltd. | Baking apparatus, baking method and method of reducing gap width |
US10151981B2 (en) * | 2008-05-22 | 2018-12-11 | Micron Technology, Inc. | Methods of forming structures supported by semiconductor substrates |
KR101523951B1 (ko) * | 2008-10-09 | 2015-06-02 | 삼성전자주식회사 | 반도체 소자의 미세 패턴 형성 방법 |
US8796155B2 (en) | 2008-12-04 | 2014-08-05 | Micron Technology, Inc. | Methods of fabricating substrates |
US8273634B2 (en) * | 2008-12-04 | 2012-09-25 | Micron Technology, Inc. | Methods of fabricating substrates |
US8247302B2 (en) * | 2008-12-04 | 2012-08-21 | Micron Technology, Inc. | Methods of fabricating substrates |
KR20110099283A (ko) | 2008-12-26 | 2011-09-07 | 후지쯔 가부시끼가이샤 | 패턴의 형성 방법 및 반도체 장치의 제조 방법, 및 레지스트 패턴의 피복층의 형성 재료 |
US8268543B2 (en) | 2009-03-23 | 2012-09-18 | Micron Technology, Inc. | Methods of forming patterns on substrates |
US9330934B2 (en) * | 2009-05-18 | 2016-05-03 | Micron Technology, Inc. | Methods of forming patterns on substrates |
US20110129991A1 (en) * | 2009-12-02 | 2011-06-02 | Kyle Armstrong | Methods Of Patterning Materials, And Methods Of Forming Memory Cells |
US8518788B2 (en) | 2010-08-11 | 2013-08-27 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US8455341B2 (en) | 2010-09-02 | 2013-06-04 | Micron Technology, Inc. | Methods of forming features of integrated circuitry |
JP5659872B2 (ja) * | 2010-10-22 | 2015-01-28 | 富士通株式会社 | レジストパターン改善化材料、レジストパターンの形成方法、及び半導体装置の製造方法 |
JP5659873B2 (ja) * | 2010-12-16 | 2015-01-28 | 富士通株式会社 | レジストパターン改善化材料、レジストパターンの形成方法、及び半導体装置の製造方法 |
US8575032B2 (en) | 2011-05-05 | 2013-11-05 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
US9076680B2 (en) | 2011-10-18 | 2015-07-07 | Micron Technology, Inc. | Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array |
US9177794B2 (en) | 2012-01-13 | 2015-11-03 | Micron Technology, Inc. | Methods of patterning substrates |
US8629048B1 (en) | 2012-07-06 | 2014-01-14 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
CN110869851A (zh) * | 2017-07-13 | 2020-03-06 | 王子控股株式会社 | 形成下层膜的组合物、图案形成方法及形成图案的下层膜形成用共聚物 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06105686B2 (ja) * | 1992-09-18 | 1994-12-21 | 日本アイ・ビー・エム株式会社 | 半導体装置の製造方法 |
JPH08181132A (ja) * | 1994-12-22 | 1996-07-12 | Hitachi Ltd | ポジ型パタン形成方法 |
TW372337B (en) * | 1997-03-31 | 1999-10-21 | Mitsubishi Electric Corp | Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus |
JPH11186524A (ja) * | 1997-12-24 | 1999-07-09 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2000058506A (ja) * | 1998-08-06 | 2000-02-25 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
US6114085A (en) * | 1998-11-18 | 2000-09-05 | Clariant Finance (Bvi) Limited | Antireflective composition for a deep ultraviolet photoresist |
JP3950584B2 (ja) * | 1999-06-29 | 2007-08-01 | Azエレクトロニックマテリアルズ株式会社 | 水溶性樹脂組成物 |
KR100473800B1 (ko) * | 2001-09-12 | 2005-03-07 | 학교법인 포항공과대학교 | 저에너지 전자빔을 이용하는 고정밀 패턴 형성 방법 |
US20030102285A1 (en) * | 2001-11-27 | 2003-06-05 | Koji Nozaki | Resist pattern thickening material, resist pattern and forming method thereof, and semiconductor device and manufacturing method thereof |
US7189783B2 (en) * | 2001-11-27 | 2007-03-13 | Fujitsu Limited | Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof |
JP3850767B2 (ja) * | 2002-07-25 | 2006-11-29 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法 |
JP2004086203A (ja) * | 2002-08-07 | 2004-03-18 | Renesas Technology Corp | 微細パターン形成材料および電子デバイスの製造方法 |
US20040029047A1 (en) * | 2002-08-07 | 2004-02-12 | Renesas Technology Corp. | Micropattern forming material, micropattern forming method and method for manufacturing semiconductor device |
JP2004078033A (ja) * | 2002-08-21 | 2004-03-11 | Tokyo Ohka Kogyo Co Ltd | パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法 |
JP3850772B2 (ja) * | 2002-08-21 | 2006-11-29 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの製造方法、及び半導体装置の製造方法 |
JP2004093832A (ja) * | 2002-08-30 | 2004-03-25 | Renesas Technology Corp | 微細パターン形成材料、微細パターン形成方法および半導体装置の製造方法 |
JP2004101849A (ja) * | 2002-09-09 | 2004-04-02 | Mitsubishi Gas Chem Co Inc | 洗浄剤組成物 |
JP3850781B2 (ja) * | 2002-09-30 | 2006-11-29 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの形成方法、及び半導体装置の製造方法 |
US6818384B2 (en) * | 2002-10-08 | 2004-11-16 | Samsung Electronics Co., Ltd. | Methods of fabricating microelectronic features by forming intermixed layers of water-soluble resins and resist materials |
KR100499008B1 (ko) * | 2002-12-30 | 2005-07-01 | 삼성전기주식회사 | 비아홀이 필요없는 양면 인쇄회로기판 및 그 제조방법 |
JP4149306B2 (ja) * | 2003-04-30 | 2008-09-10 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP4303044B2 (ja) * | 2003-06-23 | 2009-07-29 | Necエレクトロニクス株式会社 | 化学増幅型レジスト組成物および該化学増幅型レジスト組成物を用いた半導体集積回路装置の製造方法 |
TWI360565B (en) * | 2003-07-09 | 2012-03-21 | Toray Industries | Photosensitive resin precursor composition |
JP4490228B2 (ja) * | 2004-06-15 | 2010-06-23 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法 |
JP4676325B2 (ja) * | 2005-02-18 | 2011-04-27 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法 |
US7247419B2 (en) * | 2005-04-11 | 2007-07-24 | Az Electronic Materials Usa Corp. | Nanocomposite photosensitive composition and use thereof |
-
2006
- 2006-08-17 JP JP2006222310A patent/JP4724072B2/ja not_active Expired - Fee Related
- 2006-12-28 TW TW095149497A patent/TWI371778B/zh active
- 2006-12-29 KR KR1020060138074A patent/KR100901837B1/ko not_active IP Right Cessation
- 2006-12-29 US US11/647,167 patent/US20080044770A1/en not_active Abandoned
-
2007
- 2007-01-05 DE DE102007001796A patent/DE102007001796B4/de not_active Expired - Fee Related
- 2007-01-26 CN CN2007100081795A patent/CN101126895B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW200811919A (en) | 2008-03-01 |
JP2008046395A (ja) | 2008-02-28 |
KR20080016405A (ko) | 2008-02-21 |
CN101126895B (zh) | 2011-06-15 |
JP4724072B2 (ja) | 2011-07-13 |
CN101126895A (zh) | 2008-02-20 |
DE102007001796A1 (de) | 2008-02-28 |
US20080044770A1 (en) | 2008-02-21 |
DE102007001796B4 (de) | 2012-12-13 |
KR100901837B1 (ko) | 2009-06-09 |
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