TWI370330B - Scanning exposure apparatus and device manufacturing method - Google Patents

Scanning exposure apparatus and device manufacturing method

Info

Publication number
TWI370330B
TWI370330B TW096121193A TW96121193A TWI370330B TW I370330 B TWI370330 B TW I370330B TW 096121193 A TW096121193 A TW 096121193A TW 96121193 A TW96121193 A TW 96121193A TW I370330 B TWI370330 B TW I370330B
Authority
TW
Taiwan
Prior art keywords
exposure apparatus
device manufacturing
scanning exposure
scanning
manufacturing
Prior art date
Application number
TW096121193A
Other languages
English (en)
Chinese (zh)
Other versions
TW200807179A (en
Inventor
Satoru Oishi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW200807179A publication Critical patent/TW200807179A/zh
Application granted granted Critical
Publication of TWI370330B publication Critical patent/TWI370330B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW096121193A 2006-06-14 2007-06-12 Scanning exposure apparatus and device manufacturing method TWI370330B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006165359A JP4250637B2 (ja) 2006-06-14 2006-06-14 走査露光装置及びデバイス製造方法

Publications (2)

Publication Number Publication Date
TW200807179A TW200807179A (en) 2008-02-01
TWI370330B true TWI370330B (en) 2012-08-11

Family

ID=38861205

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096121193A TWI370330B (en) 2006-06-14 2007-06-12 Scanning exposure apparatus and device manufacturing method

Country Status (4)

Country Link
US (1) US7710543B2 (enExample)
JP (1) JP4250637B2 (enExample)
KR (1) KR100889843B1 (enExample)
TW (1) TWI370330B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8248465B2 (en) * 2007-12-27 2012-08-21 Olympus Corporation Measuring endoscope apparatus and program
JP2019053177A (ja) 2017-09-14 2019-04-04 東芝メモリ株式会社 露光装置および方法
JP7137363B2 (ja) * 2018-06-11 2022-09-14 キヤノン株式会社 露光方法、露光装置、物品の製造方法及び計測方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100300618B1 (ko) * 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JP3309927B2 (ja) 1993-03-03 2002-07-29 株式会社ニコン 露光方法、走査型露光装置、及びデバイス製造方法
JPH0864518A (ja) * 1994-06-14 1996-03-08 Canon Inc 露光方法
JPH09293655A (ja) 1996-04-25 1997-11-11 Nikon Corp 投影露光装置
JPH10270305A (ja) 1997-03-26 1998-10-09 Nikon Corp 露光方法
JPH10284366A (ja) 1997-04-02 1998-10-23 Nikon Corp 焦点位置検出装置及び焦点位置検出方法
JP3454497B2 (ja) * 1997-07-15 2003-10-06 キヤノン株式会社 投影露光方法および装置
JP3428872B2 (ja) * 1997-08-29 2003-07-22 キヤノン株式会社 露光方法および装置
US6128089A (en) * 1998-07-28 2000-10-03 International Business Machines Corporation Combined segmented and nonsegmented bar-in-bar targets
US6063531A (en) * 1998-10-06 2000-05-16 Advanced Micro Devices, Inc. Focus monitor structure and method for lithography process
US6765647B1 (en) * 1998-11-18 2004-07-20 Nikon Corporation Exposure method and device
JP2000260840A (ja) 1999-03-12 2000-09-22 Toshiba Corp 半導体基板の測定方法及び測定装置
US6381004B1 (en) * 1999-09-29 2002-04-30 Nikon Corporation Exposure apparatus and device manufacturing method
JP2002100552A (ja) 2000-09-21 2002-04-05 Nikon Corp 走査露光装置及びこの装置に用いる面位置検出方法
JP4803901B2 (ja) * 2001-05-22 2011-10-26 キヤノン株式会社 位置合わせ方法、露光装置、および半導体デバイス製造方法
JP2002353099A (ja) * 2001-05-22 2002-12-06 Canon Inc 位置検出方法及び装置及び露光装置及びデバイス製造方法
JP4006217B2 (ja) * 2001-10-30 2007-11-14 キヤノン株式会社 露光方法、露光装置及びデバイスの製造方法
JP3465710B2 (ja) 2002-08-26 2003-11-10 株式会社ニコン 投影露光装置、投影露光方法、並びに集積回路製造方法
JP2005129674A (ja) * 2003-10-23 2005-05-19 Canon Inc 走査露光装置およびデバイス製造方法
JP4724470B2 (ja) 2005-06-02 2011-07-13 キヤノン株式会社 露光方法

Also Published As

Publication number Publication date
JP4250637B2 (ja) 2009-04-08
JP2007335611A (ja) 2007-12-27
KR20070119548A (ko) 2007-12-20
TW200807179A (en) 2008-02-01
KR100889843B1 (ko) 2009-03-20
US7710543B2 (en) 2010-05-04
US20070291246A1 (en) 2007-12-20

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees