TWI369717B - Method for forming semiconductor device - Google Patents

Method for forming semiconductor device

Info

Publication number
TWI369717B
TWI369717B TW096127962A TW96127962A TWI369717B TW I369717 B TWI369717 B TW I369717B TW 096127962 A TW096127962 A TW 096127962A TW 96127962 A TW96127962 A TW 96127962A TW I369717 B TWI369717 B TW I369717B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
forming semiconductor
forming
semiconductor
Prior art date
Application number
TW096127962A
Other languages
English (en)
Other versions
TW200842933A (en
Inventor
Ku Feng Yang
Wengjin Wu
Wenchih Chiou
Chen Hua Yu
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200842933A publication Critical patent/TW200842933A/zh
Application granted granted Critical
Publication of TWI369717B publication Critical patent/TWI369717B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW096127962A 2007-04-25 2007-07-31 Method for forming semiconductor device TWI369717B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/740,178 US8119500B2 (en) 2007-04-25 2007-04-25 Wafer bonding

Publications (2)

Publication Number Publication Date
TW200842933A TW200842933A (en) 2008-11-01
TWI369717B true TWI369717B (en) 2012-08-01

Family

ID=39887481

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096127962A TWI369717B (en) 2007-04-25 2007-07-31 Method for forming semiconductor device

Country Status (3)

Country Link
US (1) US8119500B2 (zh)
CN (1) CN100547751C (zh)
TW (1) TWI369717B (zh)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7939941B2 (en) 2007-06-27 2011-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Formation of through via before contact processing
US8853830B2 (en) 2008-05-14 2014-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. System, structure, and method of manufacturing a semiconductor substrate stack
US9117828B2 (en) * 2009-03-27 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method of handling a thin wafer
CN101853804B (zh) * 2009-04-03 2012-05-23 南茂科技股份有限公司 半导体装置的制造方法
US8252665B2 (en) * 2009-09-14 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Protection layer for adhesive material at wafer edge
US8157621B2 (en) * 2009-10-12 2012-04-17 Nanya Technology Corp. Wafer back side grinding process
US8613996B2 (en) * 2009-10-21 2013-12-24 International Business Machines Corporation Polymeric edge seal for bonded substrates
US8287980B2 (en) 2009-10-29 2012-10-16 International Business Machines Corporation Edge protection seal for bonded substrates
TW202315049A (zh) * 2010-02-16 2023-04-01 凡 歐貝克 製造３ｄ半導體晶圓的方法
KR101665302B1 (ko) * 2010-05-20 2016-10-24 에베 그룹 에. 탈너 게엠베하 칩 스택 제조 방법, 및 본 방법을 실시하기 위한 캐리어
US20120220101A1 (en) * 2010-08-27 2012-08-30 Triune Ip Llc Internal conductive layer
TWI505342B (zh) * 2010-09-02 2015-10-21 United Microelectronics Corp 薄化晶圓的方法
US8278189B2 (en) * 2010-09-02 2012-10-02 United Microelectronics Corp. Method for thinning wafer
CN102403193A (zh) * 2010-09-17 2012-04-04 联华电子股份有限公司 薄化晶片的方法
FR2969373B1 (fr) * 2010-12-20 2013-07-19 St Microelectronics Crolles 2 Procede d'assemblage de deux plaques et dispositif correspondant
FR2980036A1 (fr) * 2011-09-12 2013-03-15 St Microelectronics Crolles 2 Procede de realisation d'une structure integree tridimensionnelle et structure correspondante
US8778737B2 (en) 2011-10-31 2014-07-15 International Business Machines Corporation Flattened substrate surface for substrate bonding
US8765578B2 (en) * 2012-06-06 2014-07-01 International Business Machines Corporation Edge protection of bonded wafers during wafer thinning
JP5784658B2 (ja) * 2013-02-28 2015-09-24 株式会社東芝 半導体装置の製造方法及び製造装置
US9028628B2 (en) 2013-03-14 2015-05-12 International Business Machines Corporation Wafer-to-wafer oxide fusion bonding
US9058974B2 (en) 2013-06-03 2015-06-16 International Business Machines Corporation Distorting donor wafer to corresponding distortion of host wafer
US9425155B2 (en) * 2014-02-25 2016-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer bonding process and structure
CN103839776B (zh) * 2014-03-07 2016-11-16 上海华虹宏力半导体制造有限公司 半导体结构及其形成方法
FR3021455B1 (fr) * 2014-05-21 2017-10-13 St Microelectronics Crolles 2 Sas Procede d'aplanissement d'evidements remplis de cuivre
US9422156B2 (en) * 2014-07-07 2016-08-23 Invensense, Inc. Integrated CMOS and MEMS sensor fabrication method and structure
JP2016025116A (ja) * 2014-07-16 2016-02-08 株式会社ディスコ ウエーハの加工方法
CN105448750A (zh) * 2014-08-28 2016-03-30 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制作方法和电子装置
CN105374741B (zh) * 2014-08-30 2019-07-02 中芯国际集成电路制造(上海)有限公司 晶圆键合的方法以及晶圆的键合部件
US9337064B2 (en) 2014-09-15 2016-05-10 Micron Technology, Inc. Methods of protecting peripheries of in-process semiconductor wafers and related in-process wafers and systems
TWI571978B (zh) * 2015-02-16 2017-02-21 Asia Pacific Microsystems Inc A method of manufacturing a microelement with a support structure
US9443782B1 (en) 2015-08-11 2016-09-13 Freescale Semiconductor, Inc. Method of bond pad protection during wafer processing
US9972603B2 (en) * 2015-12-29 2018-05-15 Taiwan Semiconductor Manufacturing Co., Ltd. Seal-ring structure for stacking integrated circuits
US10867836B2 (en) * 2016-05-02 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer stack and fabrication method thereof
US10497667B2 (en) 2017-09-26 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for bond wave propagation control
US11276676B2 (en) 2018-05-15 2022-03-15 Invensas Bonding Technologies, Inc. Stacked devices and methods of fabrication
US11296044B2 (en) 2018-08-29 2022-04-05 Invensas Bonding Technologies, Inc. Bond enhancement structure in microelectronics for trapping contaminants during direct-bonding processes
CN110223909B (zh) * 2019-05-29 2024-03-26 浙江荷清柔性电子技术有限公司 一种晶圆边缘处理方法及晶圆组件
US11296053B2 (en) 2019-06-26 2022-04-05 Invensas Bonding Technologies, Inc. Direct bonded stack structures for increased reliability and improved yield in microelectronics
JP2021048303A (ja) 2019-09-19 2021-03-25 キオクシア株式会社 半導体装置
CN110854011A (zh) * 2019-09-30 2020-02-28 芯盟科技有限公司 堆叠键合晶圆的处理方法
CN112185807B (zh) * 2020-09-30 2023-12-22 武汉新芯集成电路制造有限公司 一种多晶圆堆叠结构的形成方法
US11862609B2 (en) * 2021-03-18 2024-01-02 Taiwan Semiconductor Manufacturing Company Limited Semiconductor die including fuse structure and methods for forming the same
KR20240046589A (ko) * 2021-08-26 2024-04-09 가부시키가이샤 에바라 세이사꾸쇼 기판 처리 방법 및 기판 처리 장치
WO2023032552A1 (ja) * 2021-09-01 2023-03-09 株式会社荏原製作所 基板処理方法
WO2023042547A1 (ja) 2021-09-14 2023-03-23 株式会社荏原製作所 基板処理装置、および基板処理方法
JP2024010745A (ja) * 2022-07-13 2024-01-25 株式会社荏原製作所 基板製造方法および基板製造装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3352896B2 (ja) * 1997-01-17 2002-12-03 信越半導体株式会社 貼り合わせ基板の作製方法
US6358570B1 (en) * 1999-03-31 2002-03-19 Battelle Memorial Institute Vacuum deposition and curing of oligomers and resins
JP3580227B2 (ja) * 2000-06-21 2004-10-20 三菱住友シリコン株式会社 複合基板の分離方法及び分離装置
FR2823373B1 (fr) * 2001-04-10 2005-02-04 Soitec Silicon On Insulator Dispositif de coupe de couche d'un substrat, et procede associe
US6762076B2 (en) * 2002-02-20 2004-07-13 Intel Corporation Process of vertically stacking multiple wafers supporting different active integrated circuit (IC) devices
US6841848B2 (en) * 2003-06-06 2005-01-11 Analog Devices, Inc. Composite semiconductor wafer and a method for forming the composite semiconductor wafer
US20050003650A1 (en) * 2003-07-02 2005-01-06 Shriram Ramanathan Three-dimensional stacked substrate arrangements
US7186637B2 (en) * 2003-07-31 2007-03-06 Intel Corporation Method of bonding semiconductor devices
US20050161808A1 (en) * 2004-01-22 2005-07-28 Anderson Douglas G. Wafer, intermediate wafer assembly and associated method for fabricating a silicon on insulator wafer having an improved edge profile
US7129172B2 (en) * 2004-03-29 2006-10-31 Intel Corporation Bonded wafer processing method
US7087538B2 (en) * 2004-08-16 2006-08-08 Intel Corporation Method to fill the gap between coupled wafers
US7348786B2 (en) * 2004-08-31 2008-03-25 Georgia Tech Research Corporation Probe module for testing chips with electrical and optical input/output interconnects, methods of use, and methods of fabrication
US8124455B2 (en) * 2005-04-02 2012-02-28 Stats Chippac Ltd. Wafer strength reinforcement system for ultra thin wafer thinning
US7807550B2 (en) * 2005-06-17 2010-10-05 Dalsa Semiconductor Inc. Method of making MEMS wafers

Also Published As

Publication number Publication date
CN101295653A (zh) 2008-10-29
US20080268614A1 (en) 2008-10-30
CN100547751C (zh) 2009-10-07
US8119500B2 (en) 2012-02-21
TW200842933A (en) 2008-11-01

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