TWI369511B - Fabrication method for pattern-formed structure and fabrication method for pattern-formed substrate - Google Patents

Fabrication method for pattern-formed structure and fabrication method for pattern-formed substrate

Info

Publication number
TWI369511B
TWI369511B TW096134550A TW96134550A TWI369511B TW I369511 B TWI369511 B TW I369511B TW 096134550 A TW096134550 A TW 096134550A TW 96134550 A TW96134550 A TW 96134550A TW I369511 B TWI369511 B TW I369511B
Authority
TW
Taiwan
Prior art keywords
pattern
fabrication method
substrate
formed structure
formed substrate
Prior art date
Application number
TW096134550A
Other languages
English (en)
Other versions
TW200821627A (en
Inventor
Abe Makoto
Kurihara Masaaki
Baba Kazuaki
Original Assignee
Dainippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Printing Co Ltd filed Critical Dainippon Printing Co Ltd
Publication of TW200821627A publication Critical patent/TW200821627A/zh
Application granted granted Critical
Publication of TWI369511B publication Critical patent/TWI369511B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00009—Production of simple or compound lenses
    • B29D11/00365—Production of microlenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Ophthalmology & Optometry (AREA)
  • Mechanical Engineering (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
TW096134550A 2006-09-15 2007-09-14 Fabrication method for pattern-formed structure and fabrication method for pattern-formed substrate TWI369511B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006250794A JP4910590B2 (ja) 2006-09-15 2006-09-15 パターン形成体の製造方法

Publications (2)

Publication Number Publication Date
TW200821627A TW200821627A (en) 2008-05-16
TWI369511B true TWI369511B (en) 2012-08-01

Family

ID=39188130

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096134550A TWI369511B (en) 2006-09-15 2007-09-14 Fabrication method for pattern-formed structure and fabrication method for pattern-formed substrate

Country Status (3)

Country Link
US (2) US9017929B2 (zh)
JP (1) JP4910590B2 (zh)
TW (1) TWI369511B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5086149B2 (ja) * 2008-03-26 2012-11-28 日本電信電話株式会社 微細構造の作製方法
JP2010085625A (ja) * 2008-09-30 2010-04-15 Dainippon Printing Co Ltd ３次元パターン形成体の製造方法
TWI414646B (zh) * 2009-04-27 2013-11-11 Aurotek Corp 用於太陽能電池之具有週期結構之矽基板之製造方法
JP5486838B2 (ja) * 2009-05-12 2014-05-07 シャープ株式会社 レンズの形成方法、半導体装置の製造方法および電子情報機器
JP5707909B2 (ja) * 2010-12-06 2015-04-30 大日本印刷株式会社 微粒子の製造方法
JP5824878B2 (ja) * 2011-05-31 2015-12-02 大日本印刷株式会社 偽装防止用粒子の製造方法
WO2014054250A1 (ja) * 2012-10-01 2014-04-10 株式会社クラレ 微細構造体の製造方法、および微細構造体
CN110568721A (zh) * 2019-09-12 2019-12-13 Oppo广东移动通信有限公司 玻璃盖板的制作方法、玻璃盖板及移动终端
CN113805256A (zh) * 2020-06-17 2021-12-17 光群雷射科技股份有限公司 透镜的转印式制造方法及透镜转印层的制造方法
CN113917583B (zh) * 2020-07-09 2023-07-25 光群雷射科技股份有限公司 增亮膜的转印式制造方法及增亮膜
CN113515021A (zh) * 2021-03-12 2021-10-19 苏州苏大维格科技集团股份有限公司 激光直写光刻机制作的三维微纳形貌结构
US11796917B2 (en) * 2021-05-07 2023-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Width adjustment of EUV radiation beam
CN115144939B (zh) * 2022-06-28 2024-07-26 合肥英拓光电技术有限公司 一种微透镜阵列、微透镜阵列制备方法和光学检测装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS608844A (ja) * 1983-06-29 1985-01-17 Pioneer Electronic Corp 電子ビームによるレジスト加工方法
JPH0681248B2 (ja) 1988-10-04 1994-10-12 株式会社写研 レーザプロッタ装置における網点データの作成方法
US5193008A (en) * 1990-11-07 1993-03-09 Dp-Tek, Inc. Interleaving vertical pixels in raster-based laser printers
US5310623A (en) 1992-11-27 1994-05-10 Lockheed Missiles & Space Company, Inc. Method for fabricating microlenses
JPH07235075A (ja) * 1994-02-23 1995-09-05 Dainippon Printing Co Ltd 光ヘッド用回折格子とその作製方法
JP3611613B2 (ja) * 1994-12-27 2005-01-19 Ｈｏｙａ株式会社 三次元形状の形成方法、該方法により形成した三次元構造体およびプレス成形型
JP2001147515A (ja) * 1999-09-07 2001-05-29 Ricoh Co Ltd フォトマスク設計方法、フォトマスク設計装置、コンピュータ読取可能な記憶媒体、フォトマスク、フォトレジスト、感光性樹脂、基板、マイクロレンズ及び光学素子
US7251060B2 (en) * 2000-12-12 2007-07-31 Ricoh Company, Ltd. Image-processing device using quantization threshold values produced according to a dither threshold matrix and arranging dot-on pixels in a plural-pixel field according to the dither threshold matrix
JP4281041B2 (ja) * 2001-10-01 2009-06-17 セイコーエプソン株式会社 位相格子マスク
JP4515012B2 (ja) * 2002-08-07 2010-07-28 大日本印刷株式会社 パターンデータの作製方法およびフォトマスク
TW200628921A (en) 2004-09-17 2006-08-16 Hitachi Maxell Microlens array, method of fabricating microlens array, and liquid crystal display apparatus with microlens array
US7612570B2 (en) * 2006-08-30 2009-11-03 Ricoh Company, Limited Surface-potential distribution measuring apparatus, image carrier, and image forming apparatus

Also Published As

Publication number Publication date
JP4910590B2 (ja) 2012-04-04
US9568827B2 (en) 2017-02-14
JP2008070741A (ja) 2008-03-27
TW200821627A (en) 2008-05-16
US9017929B2 (en) 2015-04-28
US20150198889A1 (en) 2015-07-16
US20080068441A1 (en) 2008-03-20

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