TWI368112B - Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method - Google Patents

Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method

Info

Publication number
TWI368112B
TWI368112B TW096125282A TW96125282A TWI368112B TW I368112 B TWI368112 B TW I368112B TW 096125282 A TW096125282 A TW 096125282A TW 96125282 A TW96125282 A TW 96125282A TW I368112 B TWI368112 B TW I368112B
Authority
TW
Taiwan
Prior art keywords
lithographic
device manufacturing
processing cell
inspection method
lithographic processing
Prior art date
Application number
TW096125282A
Other languages
English (en)
Other versions
TW200813654A (en
Inventor
Mircea Dusa
Boef Arie Jeffrey Den
Hugo Augustinus Joseph Cramer
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of TW200813654A publication Critical patent/TW200813654A/zh
Application granted granted Critical
Publication of TWI368112B publication Critical patent/TWI368112B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Accessory Devices And Overall Control Thereof (AREA)
  • Spectrometry And Color Measurement (AREA)
TW096125282A 2006-07-18 2007-07-11 Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method TWI368112B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/488,170 US7916284B2 (en) 2006-07-18 2006-07-18 Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method

Publications (2)

Publication Number Publication Date
TW200813654A TW200813654A (en) 2008-03-16
TWI368112B true TWI368112B (en) 2012-07-11

Family

ID=38561233

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096125282A TWI368112B (en) 2006-07-18 2007-07-11 Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method

Country Status (7)

Country Link
US (1) US7916284B2 (zh)
EP (1) EP1881374B1 (zh)
JP (1) JP4912241B2 (zh)
KR (1) KR100919000B1 (zh)
CN (1) CN101109910B (zh)
SG (1) SG139628A1 (zh)
TW (1) TWI368112B (zh)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8169703B1 (en) * 2006-09-06 2012-05-01 Lightsmyth Technologies Inc. Monolithic arrays of diffraction gratings
DE102006056625B4 (de) * 2006-11-30 2014-11-20 Globalfoundries Inc. Verfahren und Teststruktur zum Bestimmen von Fokuseinstellungen in einem Lithographieprozess auf der Grundlage von CD-Messungen
JP2008233343A (ja) * 2007-03-19 2008-10-02 Advanced Mask Inspection Technology Kk 試料検査装置、補正画像生成方法及びプログラム
JP5017147B2 (ja) * 2008-03-06 2012-09-05 東京エレクトロン株式会社 基板の処理方法、プログラム及びコンピュータ記憶媒体及び基板処理システム
US7967995B2 (en) * 2008-03-31 2011-06-28 Tokyo Electron Limited Multi-layer/multi-input/multi-output (MLMIMO) models and method for using
NL1036734A1 (nl) * 2008-04-09 2009-10-12 Asml Netherlands Bv A method of assessing a model, an inspection apparatus and a lithographic apparatus.
NL1036647A1 (nl) * 2008-04-16 2009-10-19 Asml Netherlands Bv A method of measuring a lithographic projection apparatus.
WO2009143200A2 (en) * 2008-05-21 2009-11-26 Kla-Tencor Corporation Substrate matrix to decouple tool and process effects
US8773640B2 (en) * 2008-05-29 2014-07-08 Asml Netherlands B.V. Inspection method and apparatus
EP2131243B1 (en) * 2008-06-02 2015-07-01 ASML Netherlands B.V. Lithographic apparatus and method for calibrating a stage position
NL2002962A1 (nl) * 2008-06-11 2009-12-14 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
WO2010076232A2 (en) 2008-12-30 2010-07-08 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
TWI405283B (zh) * 2009-03-18 2013-08-11 Marketech Int Corp Semiconductor Film Formation Detection and Adjustment System and Method
NL2004656A (en) 2009-05-12 2010-11-15 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
NL2004946A (en) * 2009-07-06 2011-01-10 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
JP2011040547A (ja) 2009-08-10 2011-02-24 Canon Inc 計測装置、露光装置及びデバイスの製造方法
JP5406623B2 (ja) 2009-08-10 2014-02-05 キヤノン株式会社 計測装置、露光装置及びデバイスの製造方法
NL2005863A (en) * 2009-12-28 2011-06-29 Asml Netherlands Bv Calibration method and apparatus.
US20110246141A1 (en) * 2010-03-31 2011-10-06 Tokyo Electron Limited Method of optical metrology optimization using ray tracing
CN101813893B (zh) * 2010-04-07 2012-02-01 芯硕半导体（中国）有限公司 一种采用曝光方式标定曝光能量需求分布的方法
US9177219B2 (en) * 2010-07-09 2015-11-03 Asml Netherlands B.V. Method of calibrating a lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product
CN102486605B (zh) * 2010-12-02 2014-04-16 上海华虹宏力半导体制造有限公司 覆盖形貌的光学临近效应修正方法
KR20130014190A (ko) * 2011-07-29 2013-02-07 삼성전자주식회사 공정을 모니터링하여 공정 조건 및 구성을 보정하는 것을 포함하는 반도체 소자 제조 방법
NL2009305A (en) 2011-08-31 2013-03-04 Asml Netherlands Bv A method of determining focus corrections, lithographic processing cell and device manufacturing method.
US8468471B2 (en) * 2011-09-23 2013-06-18 Kla-Tencor Corp. Process aware metrology
CN102411260B (zh) * 2011-11-28 2014-07-16 上海华力微电子有限公司 掩膜板缺陷检测方法
KR101793565B1 (ko) 2012-07-23 2017-11-03 에이에스엠엘 네델란즈 비.브이. 검사 방법 및 장치, 리소그래피 시스템, 및 디바이스 제조 방법
US9454072B2 (en) 2012-11-09 2016-09-27 Kla-Tencor Corporation Method and system for providing a target design displaying high sensitivity to scanner focus change
NL2011816A (en) * 2012-11-30 2014-06-04 Asml Netherlands Bv Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method.
WO2014198516A1 (en) * 2013-06-12 2014-12-18 Asml Netherlands B.V. Method of determining critical-dimension-related properties, inspection apparatus and device manufacturing method
US10502694B2 (en) * 2013-08-06 2019-12-10 Kla-Tencor Corporation Methods and apparatus for patterned wafer characterization
WO2015080858A1 (en) 2013-12-01 2015-06-04 Kla-Tencor Corporation Target element types for process parameter metrology
KR101890784B1 (ko) * 2013-12-19 2018-08-22 에이에스엠엘 네델란즈 비.브이. 검사 방법과 장치 및 리소그래피 장치
WO2015143378A1 (en) * 2014-03-20 2015-09-24 Kla-Tencor Corporation Compressive sensing with illumination patterning
CN106662823B (zh) * 2014-06-30 2018-10-19 Asml荷兰有限公司 确定剂量的方法、检查设备、图案形成装置、衬底以及器件制造方法
JP6367021B2 (ja) * 2014-07-02 2018-08-01 東芝メモリ株式会社 露光条件解析方法
US9841689B1 (en) 2014-08-22 2017-12-12 Kla-Tencor Corporation Approach for model calibration used for focus and dose measurement
KR102323388B1 (ko) * 2015-05-15 2021-11-05 케이엘에이 코포레이션 초점 감응성 오버레이 타겟을 이용한 초점 결정용 시스템 및 방법
NL2017123A (en) 2015-07-24 2017-01-24 Asml Netherlands Bv Inspection apparatus, inspection method, lithographic apparatus and manufacturing method
KR102420726B1 (ko) * 2015-08-06 2022-07-15 케이엘에이 코포레이션 타겟의 에어리얼 이미지에 기초한 변환을 이용하는 초점 계측 및 타겟
NL2017882A (en) * 2015-12-17 2017-06-26 Asml Netherlands Bv Optical metrology of lithographic processes using asymmetric sub-resolution features to enhance measurement
NL2017941A (en) * 2015-12-21 2017-06-27 Asml Netherlands Bv Methods and patterning devices and apparatuses for measuring focus performance of a lithographic apparatus, device manufacturing method
JP6788839B2 (ja) * 2016-01-28 2020-11-25 大日本印刷株式会社 荷電粒子ビーム描画装置、荷電粒子ビーム描画システムおよび描画データ生成方法
EP3290911A1 (en) 2016-09-02 2018-03-07 ASML Netherlands B.V. Method and system to monitor a process apparatus
US10897566B2 (en) * 2016-09-28 2021-01-19 Kla-Tencor Corporation Direct focusing with image binning in metrology tools
CN109844647B (zh) 2016-10-14 2022-06-10 科磊股份有限公司 基于衍射的聚焦度量
WO2018099690A1 (en) * 2016-12-02 2018-06-07 Asml Netherlands B.V. A method to change an etch parameter
US11378724B2 (en) 2018-12-23 2022-07-05 Ii-Vi Delaware, Inc. Diffraction grating array for wide-angle illuminateon
KR102466584B1 (ko) * 2019-01-28 2022-11-11 케이엘에이 코포레이션 모아레 타겟 및 반도체 디바이스들의 편심의 측정에 이를 사용하기 위한 방법
US11994806B2 (en) 2019-03-14 2024-05-28 Asml Netherlands B.V. Metrology method and apparatus, computer program and lithographic system
US20230273531A1 (en) * 2020-07-16 2023-08-31 Asml Holding N.V. Spectrometric metrology systems based on multimode interference and lithographic apparatus
KR20220056726A (ko) * 2020-10-28 2022-05-06 삼성전자주식회사 디포커스 계측방법과 보정방법, 및 그 보정방법을 포함한 반도체 소자 제조방법
CN114264277A (zh) * 2021-12-31 2022-04-01 英特尔产品（成都）有限公司 用于检测芯片基板平整度异常的方法和装置

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07326563A (ja) 1994-06-01 1995-12-12 Hitachi Ltd 露光条件評価用パターンとそれを使用する露光条件評価方法および装置
JPH08264409A (ja) 1995-03-20 1996-10-11 Hitachi Ltd 半導体集積回路装置の製造方法
US5703692A (en) 1995-08-03 1997-12-30 Bio-Rad Laboratories, Inc. Lens scatterometer system employing source light beam scanning means
US5880838A (en) 1996-06-05 1999-03-09 California Institute Of California System and method for optically measuring a structure
JPH10154647A (ja) 1996-11-22 1998-06-09 Matsushita Electron Corp パターン形成異常検出方法
DE19734695C1 (de) * 1997-08-11 1998-11-05 Leica Mikroskopie & Syst Verfahren zur Korrektur der Messfehler einer Koodinaten-Messmaschine
US5963329A (en) 1997-10-31 1999-10-05 International Business Machines Corporation Method and apparatus for measuring the profile of small repeating lines
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US6689519B2 (en) 2000-05-04 2004-02-10 Kla-Tencor Technologies Corp. Methods and systems for lithography process control
US6753961B1 (en) 2000-09-18 2004-06-22 Therma-Wave, Inc. Spectroscopic ellipsometer without rotating components
IL138552A (en) 2000-09-19 2006-08-01 Nova Measuring Instr Ltd Measurement of transverse displacement by optical method
US6768983B1 (en) 2000-11-28 2004-07-27 Timbre Technologies, Inc. System and method for real-time library generation of grating profiles
US6803995B2 (en) * 2001-01-17 2004-10-12 International Business Machines Corporation Focus control system
US6515744B2 (en) 2001-02-08 2003-02-04 Therma-Wave, Inc. Small spot ellipsometer
WO2002065545A2 (en) 2001-02-12 2002-08-22 Sensys Instruments Corporation Overlay alignment metrology using diffraction gratings
US6699624B2 (en) 2001-02-27 2004-03-02 Timbre Technologies, Inc. Grating test patterns and methods for overlay metrology
US6856408B2 (en) 2001-03-02 2005-02-15 Accent Optical Technologies, Inc. Line profile asymmetry measurement using scatterometry
US6704661B1 (en) 2001-07-16 2004-03-09 Therma-Wave, Inc. Real time analysis of periodic structures on semiconductors
US6785638B2 (en) 2001-08-06 2004-08-31 Timbre Technologies, Inc. Method and system of dynamic learning through a regression-based library generation process
US7061615B1 (en) 2001-09-20 2006-06-13 Nanometrics Incorporated Spectroscopically measured overlay target
JP2003168641A (ja) 2001-12-03 2003-06-13 Mitsubishi Electric Corp 露光条件を管理することが可能な半導体装置の製造方法およびそれを用いて製造された半導体装置
US6608690B2 (en) 2001-12-04 2003-08-19 Timbre Technologies, Inc. Optical profilometry of additional-material deviations in a periodic grating
US6772084B2 (en) 2002-01-31 2004-08-03 Timbre Technologies, Inc. Overlay measurements using periodic gratings
US6813034B2 (en) 2002-02-05 2004-11-02 Therma-Wave, Inc. Analysis of isolated and aperiodic structures with simultaneous multiple angle of incidence measurements
TW594431B (en) * 2002-03-01 2004-06-21 Asml Netherlands Bv Calibration methods, calibration substrates, lithographic apparatus and device manufacturing methods
US7061627B2 (en) 2002-03-13 2006-06-13 Therma-Wave, Inc. Optical scatterometry of asymmetric lines and structures
US6721691B2 (en) 2002-03-26 2004-04-13 Timbre Technologies, Inc. Metrology hardware specification using a hardware simulator
US6853942B2 (en) * 2002-03-26 2005-02-08 Timbre Technologies, Inc. Metrology hardware adaptation with universal library
US6928628B2 (en) 2002-06-05 2005-08-09 Kla-Tencor Technologies Corporation Use of overlay diagnostics for enhanced automatic process control
US7046376B2 (en) 2002-07-05 2006-05-16 Therma-Wave, Inc. Overlay targets with isolated, critical-dimension features and apparatus to measure overlay
US6919964B2 (en) 2002-07-09 2005-07-19 Therma-Wave, Inc. CD metrology analysis using a finite difference method
JP2004108796A (ja) * 2002-09-13 2004-04-08 Aloka Co Ltd 放射線測定装置
US7151594B2 (en) 2002-11-01 2006-12-19 Asml Netherlands B.V. Test pattern, inspection method, and device manufacturing method
DE60314484T2 (de) 2002-11-01 2008-02-21 Asml Netherlands B.V. Untersuchungsverfahren und Verfahren zur Herstellung einer Vorrichtung
US7352453B2 (en) 2003-01-17 2008-04-01 Kla-Tencor Technologies Corporation Method for process optimization and control by comparison between 2 or more measured scatterometry signals
US7068363B2 (en) 2003-06-06 2006-06-27 Kla-Tencor Technologies Corp. Systems for inspection of patterned or unpatterned wafers and other specimen
US7061623B2 (en) 2003-08-25 2006-06-13 Spectel Research Corporation Interferometric back focal plane scatterometry with Koehler illumination
US7198873B2 (en) * 2003-11-18 2007-04-03 Asml Netherlands B.V. Lithographic processing optimization based on hypersampled correlations
US7342646B2 (en) * 2004-01-30 2008-03-11 Asml Masktools B.V. Method of manufacturing reliability checking and verification for lithography process using a calibrated eigen decomposition model
US20050185174A1 (en) 2004-02-23 2005-08-25 Asml Netherlands B.V. Method to determine the value of process parameters based on scatterometry data
JP4098281B2 (ja) 2004-07-22 2008-06-11 松下電器産業株式会社 露光装置のフォーカスモニタ方法およびそれ用いた露光方法
US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US20060109463A1 (en) 2004-11-22 2006-05-25 Asml Netherlands B.V. Latent overlay metrology
US7453577B2 (en) 2004-12-14 2008-11-18 Asml Netherlands B.V. Apparatus and method for inspecting a patterned part of a sample
US7532307B2 (en) * 2005-06-30 2009-05-12 Asml Netherlands B.V. Focus determination method, device manufacturing method, and mask

Also Published As

Publication number Publication date
JP4912241B2 (ja) 2012-04-11
KR100919000B1 (ko) 2009-09-25
EP1881374A2 (en) 2008-01-23
US7916284B2 (en) 2011-03-29
SG139628A1 (en) 2008-02-29
KR20080008275A (ko) 2008-01-23
JP2008028389A (ja) 2008-02-07
CN101109910B (zh) 2011-06-29
US20080018874A1 (en) 2008-01-24
CN101109910A (zh) 2008-01-23
EP1881374B1 (en) 2018-09-05
EP1881374A3 (en) 2017-05-31
TW200813654A (en) 2008-03-16

Similar Documents

Publication Publication Date Title
TWI368112B (en) Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
TWI368289B (en) Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
IL189372A0 (en) Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
IL194839A0 (en) Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
IL193061A (en) Examination method and device, lithographic device, lithographic processing cell and method of device production
IL213627A0 (en) Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
HK1259005A1 (zh) 曝光設備、曝光方法以及裝置製造方法
HK1249936B (zh) 曝光裝置、曝光方法和器件製造方法
HK1244893A1 (zh) 曝光裝置和方法以及設備製造方法
HK1243498A1 (zh) 曝光裝置、曝光方法及組件製造方法
HK1244065A1 (zh) 曝光設備、曝光方法和器件製造方法
TWI372242B (en) Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
IL187546A0 (en) Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
HK1218186A1 (zh) 暴光設備、暴光方法以及器件製造方法
HK1218675A1 (zh) 曝光裝置、曝光方法以及元件製造方法
IL189034A0 (en) Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
IL213218A0 (en) Calibration method, inspection method and apparatus, lithographic apparatus, and lithographic processing cell
TWI350429B (en) Lithographic apparatus and device manufacturing method
IL207505A0 (en) Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
HK1173232A1 (zh) 曝光方法及裝置、以及組件製造方法
SG136116A1 (en) Lithographic apparatus and device manufacturing method
EP1990828A4 (en) EXPOSURE DEVICE, EXPOSURE METHOD AND METHOD FOR PRODUCING COMPONENTS
TWI365359B (en) Lithographic apparatus and device manufacturing method
TWI365360B (en) Lithographic apparatus and device manufacturing method
SG136117A1 (en) Lithographic apparatus and device manufacturing method