TWI366745B - Exposure method and apparatus, and device manufacturing method - Google Patents

Exposure method and apparatus, and device manufacturing method

Info

Publication number
TWI366745B
TWI366745B TW096112105A TW96112105A TWI366745B TW I366745 B TWI366745 B TW I366745B TW 096112105 A TW096112105 A TW 096112105A TW 96112105 A TW96112105 A TW 96112105A TW I366745 B TWI366745 B TW I366745B
Authority
TW
Taiwan
Prior art keywords
device manufacturing
exposure
exposure method
manufacturing
Prior art date
Application number
TW096112105A
Other languages
English (en)
Other versions
TW200804998A (en
Inventor
Hisashi Namba
Tatsuya Hayashi
Takashi Kamono
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW200804998A publication Critical patent/TW200804998A/zh
Application granted granted Critical
Publication of TWI366745B publication Critical patent/TWI366745B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW096112105A 2006-04-05 2007-04-04 Exposure method and apparatus, and device manufacturing method TWI366745B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006104443A JP2007281142A (ja) 2006-04-05 2006-04-05 露光装置及び方法、並びに、デバイス製造方法

Publications (2)

Publication Number Publication Date
TW200804998A TW200804998A (en) 2008-01-16
TWI366745B true TWI366745B (en) 2012-06-21

Family

ID=38574863

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096112105A TWI366745B (en) 2006-04-05 2007-04-04 Exposure method and apparatus, and device manufacturing method

Country Status (4)

Country Link
US (1) US7633597B2 (zh)
JP (1) JP2007281142A (zh)
KR (1) KR100917968B1 (zh)
TW (1) TWI366745B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008034770A (ja) * 2006-08-01 2008-02-14 Canon Inc 露光装置
NL1036181A1 (nl) 2007-11-30 2009-06-04 Asml Netherlands Bv A lithographic apparatus, a projection system and a device manufacturing method.
JP5171482B2 (ja) * 2008-08-27 2013-03-27 キヤノン株式会社 露光装置およびデバイス製造方法
KR101032043B1 (ko) * 2008-10-16 2011-05-12 (주)한국시스톰 반도체 제조설비의 가스 쿨링시스템
NL2008250A (en) * 2011-03-08 2012-09-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
NL2020850A (en) * 2017-05-29 2018-12-04 Asml Netherlands Bv Lithographic apparatus

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD160756A3 (de) * 1981-04-24 1984-02-29 Gudrun Dietz Anordnung zur verbesserung fotochemischer umsetzungsprozesse in fotoresistschichten
US4690528A (en) * 1983-10-05 1987-09-01 Nippon Kogaku K. K. Projection exposure apparatus
US6198792B1 (en) 1998-11-06 2001-03-06 Euv Llc Wafer chamber having a gas curtain for extreme-UV lithography
AU2325900A (en) * 1999-03-12 2000-10-04 Nikon Corporation Exposure device, exposure method, and device manufacturing method
JP4689064B2 (ja) * 2000-03-30 2011-05-25 キヤノン株式会社 露光装置およびデバイス製造方法
JP2001345248A (ja) * 2000-05-31 2001-12-14 Canon Inc 露光装置、デバイス製造方法、半導体製造工場および露光装置の保守方法
JP2004039905A (ja) * 2002-07-04 2004-02-05 Nikon Corp 露光装置、ミラーの冷却方法、反射マスクの冷却方法及び露光方法
JP4311711B2 (ja) * 2003-02-24 2009-08-12 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005101537A (ja) * 2003-08-29 2005-04-14 Canon Inc 露光装置及びそれを用いたデバイスの製造方法
JP2005142382A (ja) * 2003-11-07 2005-06-02 Canon Inc 露光装置
US7030959B2 (en) 2004-07-23 2006-04-18 Nikon Corporation Extreme ultraviolet reticle protection using gas flow thermophoresis

Also Published As

Publication number Publication date
KR20070100127A (ko) 2007-10-10
US7633597B2 (en) 2009-12-15
TW200804998A (en) 2008-01-16
KR100917968B1 (ko) 2009-09-17
US20070236673A1 (en) 2007-10-11
JP2007281142A (ja) 2007-10-25

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees