1365022 九、發明說明： .【發明所屬之技術領域】 ♦· 本發明係關於一種咬合式電路結構及其製法。特定言 '之，本發明係關於一種半突出式之電路結構及其製法。 【先前技術】 電路板是電子裝置中的一種重要的元件。為了追求更 薄的成品厚度、因應細線路的需求、突破蝕刻與信賴性的 缺點，嵌入式結構已逐漸興起。由於嵌入式結構係將線路 圖案全部埋入基材中，因此有助於減少封裝成品的厚度。 隨著電子產品朝輕薄短小發展，在各種不同的應用場 合中，例如，無線通訊領域、攜帶型電子產品、汽車儀表 板等等，電路板往往被置放於有限的產品内部空間中，或 者是另透過排線及模組化的接頭，將電子產品的電子元件 • 外接至電路板，例如汽車儀表板或者設有電子功能的方向 盤。 就目前的技術而言，已知有數種方法以形成此等電路 板。其中一種方法稱為轉印技術，其提供一種具有圖案化 線路之待轉印版，再利用反壓方式將線路層埋壓入介電層 中。另外一種方法則是使用雷射將基材圖案化，來定義一 鑲嵌形式的結構，再使用一導電材料來填滿形成在基材上 1365022 _ 的凹穴，以完成一埋入式結構。 < 一般說來，基材的表面要先經過活化，才能使得導電 • 材料成功地填滿在基材上的凹穴*通常是使用無電電鑛的 技術。更有甚者，還有一種材料是不需要先經過無電電鍍 技術的活化步驟，就可以讓導電材料填入基材上的凹穴中。 就當前的技術方案而言，其製作方式是直接線路設 • 計。例如前述使用雷射將基材圖案化，來定義一鑲嵌形式 的結構，再使用一導電材料來填滿形成在基材上的凹穴， 以完成一嵌入式結構。由於集中細線路的開發，故同一線 路層都設計成雷射凹埋深度皆大於或等於線路銅層厚度要 求。由於雷射加工的產能與鑲嵌結構的尺寸，即面積*深度 之積，有明顯的負相關性。所以對於大範圍或是高深度的 鑲嵌結構來說，雷射加工的影響更大、造成產能明顯偏低， φ 不符合工業生產要求的經濟規模。 如何在持續追求「短、小、輕、薄」的潮流中不斷開 發新的技術，既能增加雷射加工的產能，又還能兼顧電路 板的品質，實乃本領域之一重要課題。 【發明内容】 本發明於是提出一種咬合式電路結構及其製法。本發 1365022 明咬合式電路的製法，可以一方面增加雷射力σ工的產能， 另一方面還能兼顧電路板的品質。實為一不可多得之技術 方案。 本發明首先提出一種咬合式（anchor)電路結構。本發 明之咬合式電路結構，包含基材、位於基材上之介電層、 位於介電層中之溝槽，以及填滿溝槽並與之咬合的之導電 材料。本發明咬合式電路結構中之導電材料部分嵌入於溝 槽中，且部分突出於溝槽外。 本發明其次提出一種形成咬合式電路結構的方法。首 先，提供一基材，基材另包含位於其上之一介電層。其次， 圖案化介電層以形成一溝槽。然後，將一導電材料填入溝 槽中並與溝槽咬合，使得導電材料部分嵌入於溝槽中並部 分突出於溝槽外。 由於本發明咬合式電路結構中之導電材料部分嵌入於 溝槽中又部分突出於溝槽外，所以使用雷射加工溝槽的凹 埋深度不再需要大於或等於線路銅層厚度。換言之，雷射 加工的溝槽深度可以減小到能維持電路板的品質要求即 可。既然鑲嵌結構的尺寸變小，雷射加工的產能便可以提 升至符合工業生產要求的經濟規模，而解決了前述的問題。 1365022 【實施方式】 本發明提供一種咬合式電路結 明咬人切致沾制、土& 苒m經由本發 式電路的製法，會形成部分嵌人於溝槽中，而部分 大出於溝槽外之導電層，故稱為咬合式電路。於是— =雷射加工的產能之外，另-方面又同時兼顧電路板的 本發明首先提出一種形成用以咬合式電路結構的方 法。第1-4圖例示形成本發明咬合式電路結構方法的一實 施例。首先，請參考第丨圖，提供一基材1〇1，並於基材 上形成一介電層110。基材101可以為單層板，也可=為 多層板。介電層110通常由一不導電之材料所組成，例如 聚合物。可以使用例如印刷法、噴塗法或是滾塗法，將聚 合物之液體印在基材101上後，再待介電層11〇定型即可。 另外，尚可以非液態的膜狀型態方式，利用熱壓合形成於 • 基材上。視情況需要，介電層110還可以分成為第一介電 層111與第二介電層112之組合。 介電層110中可以進一步包含觸媒顆粒。觸媒顆粒又 可以包含奈米顆粒及/或過渡金屬的配位化合物。過渡金屬 的配位化合物，例如可以是：過渡金屬氧化物、過渡金屬 氣化物、過渡金屬錯合物、過渡金屬螯合物或其組合。合 用的過渡金屬可以為鋅（Zn，Zinc)、銅（Cu，Copper)、銀(Ag， 13650221365022 IX. Description of the invention: [Technical field to which the invention pertains] ♦· The present invention relates to a snap-on circuit structure and a method of manufacturing the same. Specifically, the present invention relates to a semi-protruding circuit structure and a method of fabricating the same. [Prior Art] A circuit board is an important component in an electronic device. In order to pursue thinner thickness of finished products, meet the needs of thin wires, and overcome the shortcomings of etching and reliability, embedded structures have gradually emerged. Since the embedded structure completely embeds the line pattern into the substrate, it helps to reduce the thickness of the packaged product. As electronic products move toward light and thin, in various applications, such as wireless communications, portable electronics, automotive dashboards, etc., boards are often placed in limited product interior space, or The electronic components of the electronic product are externally connected to the circuit board via a cable and a modular connector, such as a car dashboard or an electronically functioned steering wheel. As far as current technology is concerned, several methods are known to form such boards. One of the methods is called a transfer technique, which provides a pattern to be transferred having a patterned line, and then uses a back pressure method to embed the wiring layer into the dielectric layer. Another method is to use a laser to pattern the substrate to define a mosaic structure, and then use a conductive material to fill the recess formed on the substrate 1365022 _ to complete a buried structure. <Generally speaking, the surface of the substrate is first activated to allow the conductive material to successfully fill the pockets on the substrate*, typically using electroless ore. What's more, there is also a material that allows the conductive material to be filled into the recesses in the substrate without the need for an activation step prior to electroless plating. As far as the current technical solutions are concerned, they are produced in a direct line design. For example, the foregoing substrate is patterned using a laser to define a structure in the form of a mosaic, and a conductive material is used to fill the recess formed in the substrate to complete an embedded structure. Due to the development of concentrated thin lines, the same line layer is designed such that the depth of the laser recess is greater than or equal to the thickness of the copper layer of the line. Due to the product of the laser processing capacity and the size of the mosaic structure, ie the area * depth, there is a significant negative correlation. Therefore, for large-scale or high-depth mosaic structures, the impact of laser processing is greater, resulting in significantly lower production capacity, and φ does not meet the economic scale of industrial production requirements. How to continuously develop new technologies in the trend of “short, small, light and thin”, which can increase the production capacity of laser processing and the quality of circuit boards, is an important subject in this field. SUMMARY OF THE INVENTION The present invention therefore proposes a snap-on circuit structure and a method of fabricating the same. The method of manufacturing the 1365022 Ming occlusion circuit can increase the productivity of the laser force on the one hand, and the quality of the circuit board on the other hand. It is a rare technical solution. The present invention first proposes an anchor circuit structure. The snap-on circuit structure of the present invention comprises a substrate, a dielectric layer on the substrate, a trench in the dielectric layer, and a conductive material that fills the trench and engages it. The conductive material in the snap-on circuit structure of the present invention is partially embedded in the trench and partially protrudes outside the trench. The present invention secondly proposes a method of forming a snap-in circuit structure. First, a substrate is provided which additionally includes a dielectric layer thereon. Second, the dielectric layer is patterned to form a trench. A conductive material is then filled into the trench and snapped into the trench such that the conductive material is partially embedded in the trench and partially protrudes out of the trench. Since the conductive material in the snap-on circuit structure of the present invention is partially embedded in the trench and partially protrudes beyond the trench, the depth of the recess using the laser processed trench no longer needs to be greater than or equal to the thickness of the copper layer of the trace. In other words, the depth of the trenches processed by the laser can be reduced to maintain the quality requirements of the board. Since the size of the mosaic structure is reduced, the capacity of laser processing can be increased to an economic scale that meets the requirements of industrial production, and the aforementioned problems are solved. 1365022 [Embodiment] The present invention provides a snap-in circuit that is formed by bite-cutting, soiling, and 苒m, which is partially embedded in a groove, and partially large in the groove. The conductive layer outside the slot is called a snap-in circuit. Thus, in addition to the capacity of the laser processing, the present invention, which simultaneously takes into account the circuit board, first proposes a method of forming a structure for the snap-in circuit. Figs. 1-4 illustrate an embodiment of a method of forming a snap-on circuit structure of the present invention. First, referring to the figure, a substrate 1〇1 is provided, and a dielectric layer 110 is formed on the substrate. The substrate 101 may be a single layer or a multilayer board. Dielectric layer 110 is typically comprised of a non-conductive material, such as a polymer. The liquid of the polymer may be printed on the substrate 101 by, for example, a printing method, a spray coating method or a roll coating method, and then the dielectric layer 11 may be shaped. In addition, it can be formed on a substrate by thermocompression using a non-liquid film type. Dielectric layer 110 can also be divided into a combination of first dielectric layer 111 and second dielectric layer 112, as desired. Catalyst particles may further be included in the dielectric layer 110. The catalyst particles may in turn comprise coordination compounds of nanoparticles and/or transition metals. The coordination compound of the transition metal may be, for example, a transition metal oxide, a transition metal vapor, a transition metal complex, a transition metal chelate or a combination thereof. The transition metals used may be zinc (Zn, Zinc), copper (Cu, Copper), silver (Ag, 1365022).
Silver)、金(Au，Gold)、鎳（Ni，Nickel)、鈀（Pd，Palladium)、 麵（Pt，Platinum)、始（Co, Cobalt)、錢（Rh，Rhodium)、銀（Ir， Iridium)、銦（In, Indium)、鐵（Fe，Iron)、锰（Mn, Manganese)、 絡（Cr，Chromium)、鶴（W，tungsten)、飢（V，Vanadium)、叙 (Ta, Tantalum)或鈦(Ti，Titanium)…等等。一但使用例如雷 射活化以後，介電層11〇在此觸媒顆粒的幫助下’可以輔 助另一導電層的成形。 鲁 其次，請參考第2圖，繼續將介電層11〇圖案化以形 成溝槽120。溝槽120可以視情況需要，具有多種之形狀， 例如V形121、U形122、梯形123、方形124或其組合。 第2圖即例示溝槽一些可能形狀之剖面圖。 圖案化介電層11〇的方式可以使用物理方法及/或化學 方法。物理方法可以包括使用雷射燒蝕製程、電漿蝕刻製 • 程與機械切割製程...等等多種方法。其中，可以使用紅外 線雷射、紫外線雷射、準分子（Excimer)雷射或遠紅外線 雷射等雷射光源來進行雷射燒餘製程。或是’可以使用水 刀切割、喷砂與外型切割來進行機械切割製程。 如果使用化學方法來圖案化介電層時，可以使用包括 氧化還原蝕刻、鹼性蝕刻、酸性蝕刻與非質子極性溶劑餘 刻…等等多種方法。用來進行非質子極性溶劑蝕刻之溶 1365022 劑，例如為N-曱基-2-四氫〇比洛酮（N-Methyl-2-Pyrrolidone， NMP)、二曱基乙酿胺(N，N-dimethylacetamide, DMAC)、二 甲基甲醯胺(Dimethylformamide, DMF)、二甲基亞艰 (Dimethyl sulfoxide, DMSO)、四氫0夫喘（Tetrahydrofuran, 11^)、1，2-二氯乙炫1(1,2-出(；111〇1*(^113116,0€£)、氣仿 (Chloroform)或其組合。 接下來，請參考第3圖，完成介電層110的圖案化之 ® 後，即可將一導電材料130填入溝槽120中，例如使用電 鍍法，將導電材料130，例如銅與鋁，填入溝槽120。填入 溝槽120中的導電材料130還會與溝槽120咬合，於是使 得導電材料130、介電層110與基材101 —起形成了圖案 化電路結構。 需要特別注意的是，填入溝槽120中的導電材料130， 參 是部分嵌入於溝槽120中並部分突出於溝槽120外的。換 句話說，導電材料130並不是完全嵌入於溝槽120中，也 不是完全突出於介電層110外。嵌入於溝槽120中的導電 材料130的比例視情況需要而定，例如，嵌入之深度為導 電材料130總高度之1%-70%之間，祇要溝槽120能將導 電材料130充分咬合，使得導電材料130能夠符合拉力測 試規格，較適嵌入之深度，可以不大於導電材料130總高 度之三分之一。 如果介電層110分成第-介電層in與第二介電層m 之組合時，在本發明—實施態樣中，第二介電層m可以 視為阻障層，或具有較第—介電層⑴更高之雷射能量 吸收率。於是當導電材料130填入溝槽120後，即可以移 牙、第一 ”電層U2 ’使得導電材料13Q部分嵌人於溝槽 中並。p刀犬出於溝槽12〇外，如第4圖所示，以突顯本發 明特徵。 在經過上述步驟後，即可得到本發明之咬合式電路結 構第5圖例示本發明咬合式電路結構的一實施例。本發 明之咬合式電路結構100,如第5圖所示，包含基材ι〇ι、 ;ι電層11〇 '多種形狀之溝槽12〇，例如v形⑵、口形 122、梯形123、方形124與導電材料㈣。填入溝槽⑽ 中的導電材料130即與溝槽12〇咬合，而部分欲入於溝槽 中並4刀大出於介電層11〇外。本發明咬合式電路結 構議之其餘魏與變化可財考前者，㈣予贅述。 ； 父曰式電路結構中之導電材料形成部分嵌 入於溝槽中並部分突出於溝槽外之特徵，所以使用雷射加 工的溝槽的深度不再需要大於或等於線路銅層厚度。換言 之導電材料嵌入於溝槽部分的深度只要足以通過線路拉 力測試規格即可。本發料合式祕㈣法，可以-方面 1365022 增加雷射加工的產能，本發明咬合式電路另一方面還能兼 - 顧電路板的品質。實為魚與熊掌兼得之優良技術方案。 以上所述僅為本發明之一實施例，凡依本發明申請專 利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。 【圖式簡單說明】 第卜4圖例示形成本發明咬合式電路結構方法的一實 鲁施例。 第5圖例示本發明咬合式電路結構的一實施例。 【主要元件符號說明】 100咬合式電路結構 101基材 110介電層 Φ 111第一介電層 112·第二介電層 120溝槽 121、122、123、124 形狀 130導電材料 12Silver), Au (Gold), Nickel (Ni, Nickel), Pd (Palladium), Pt (Plat, Platinum), Co (Co, Cobalt), Money (Rh, Rhodium), Silver (Ir, Iridium) ), In, Indium, Iron (Fe, Iron), Manganese (Mn, Manganese), Col (Chromium), Crane (W, Tungsten), V (Vanadium), Syria (Ta, Tantalum) Or titanium (Ti, Titanium)...etc. Once activated by, for example, laser activation, the dielectric layer 11 can assist in the formation of another conductive layer with the aid of the catalyst particles. Lu Next, please refer to FIG. 2 to continue to pattern the dielectric layer 11A to form the trenches 120. The trenches 120 can have a variety of shapes, such as a V-shape 121, a U-shape 122, a trapezoid 123, a square 124, or a combination thereof, as desired. Figure 2 is a cross-sectional view showing some of the possible shapes of the grooves. The manner in which the dielectric layer 11 is patterned may use physical methods and/or chemical methods. Physical methods can include a variety of methods, including laser ablation processes, plasma etching processes, and mechanical cutting processes. Among them, a laser source such as an infrared laser, an ultraviolet laser, an excimer laser or a far-infrared laser can be used for the laser burn-in process. Or 'can use waterjet cutting, sandblasting and profile cutting for mechanical cutting process. If a chemical method is used to pattern the dielectric layer, various methods including redox etching, alkaline etching, acid etching, and aprotic polar solvent etching can be used. 1365022 agent for aprotic polar solvent etching, such as N-Methyl-2-Pyrrolidone (NMP), dimercaptoamine (N, N) -dimethylacetamide, DMAC), Dimethylformamide (DMF), Dimethyl sulfoxide (DMSO), Tetrahydrofuran (11^), 1,2-Dichloroethylene 1 (1,2-out (;111〇1*(^113116,0€£), gasoform (Chloroform) or a combination thereof. Next, please refer to FIG. 3 to complete the patterning of the dielectric layer 110. Thereafter, a conductive material 130 can be filled into the trench 120. For example, a conductive material 130, such as copper and aluminum, is filled into the trench 120 by electroplating. The conductive material 130 filled in the trench 120 is also The trench 120 is bitten, so that the conductive material 130 and the dielectric layer 110 form a patterned circuit structure together with the substrate 101. It is particularly noted that the conductive material 130 filled in the trench 120 is partially embedded in the conductive material. The trench 120 partially protrudes out of the trench 120. In other words, the conductive material 130 is not completely embedded in the trench 120, nor is it completely Out of the dielectric layer 110, the proportion of the conductive material 130 embedded in the trench 120 is determined as needed, for example, the depth of the embedding is between 1% and 70% of the total height of the conductive material 130, as long as the trench 120 The conductive material 130 can be fully engaged, so that the conductive material 130 can meet the tensile test specification, and the embedded depth can be no more than one third of the total height of the conductive material 130. If the dielectric layer 110 is divided into the first dielectric layer in In combination with the second dielectric layer m, in the present invention - the second dielectric layer m can be regarded as a barrier layer or has a higher laser energy absorption rate than the first dielectric layer (1) Then, when the conductive material 130 is filled into the trench 120, the first "electric layer U2" can be moved, so that the conductive material 13Q is partially embedded in the trench and the p-dog is out of the trench 12, such as Figure 4 is a view showing the features of the present invention. After the above steps, an embodiment of the occlusal circuit structure of the present invention is illustrated in Fig. 5. An embodiment of the occlusal circuit structure of the present invention is provided. 100, as shown in Figure 5, containing the substrate ι〇ι, The dielectric layer 11〇's various shapes of trenches 12〇, such as v-shaped (2), mouth 122, trapezoid 123, square 124 and conductive material (4). The conductive material 130 filled in the trench (10) is occluded with the trench 12 And part of the desire to enter the trench and 4 knives out of the dielectric layer 11 。. The remaining structure of the occlusal circuit structure of the present invention can be tested for the former, (4). The conductive material in the parent-type circuit structure forms a feature that is partially embedded in the trench and partially protrudes beyond the trench, so the depth of the trench using laser processing no longer needs to be greater than or equal to the thickness of the copper layer of the trace. In other words, the depth of the conductive material embedded in the groove portion is sufficient to pass the line tensile test specification. The present invention combines the secret method (four) method, and can increase the production capacity of the laser processing by the 1365022. The bite type circuit of the present invention can also take care of the quality of the circuit board. It is an excellent technical solution for both fish and bear's paw. The above is only one embodiment of the present invention, and all changes and modifications made to the patent range of the present invention should be covered by the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 4 is a diagram showing a practical example of a method of forming a snap-on circuit structure of the present invention. Fig. 5 illustrates an embodiment of the snap-on circuit structure of the present invention. [Main component symbol description] 100 occlusal circuit structure 101 substrate 110 dielectric layer Φ 111 first dielectric layer 112·second dielectric layer 120 trench 121, 122, 123, 124 shape 130 conductive material 12