TW201105196A - Two shot moulding and method for making the same - Google Patents

Two shot moulding and method for making the same Download PDF

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Publication number
TW201105196A
TW201105196A TW98124213A TW98124213A TW201105196A TW 201105196 A TW201105196 A TW 201105196A TW 98124213 A TW98124213 A TW 98124213A TW 98124213 A TW98124213 A TW 98124213A TW 201105196 A TW201105196 A TW 201105196A
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Taiwan
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metal layer
plastic part
carrier
injection
line structure
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TW98124213A
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Chinese (zh)
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TWI459877B (en
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Cheng-Hung Yu
Chung Tsao
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Unimicron Technology Corp
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Abstract

A two shot moulding circuit structure includes a carrier mold, a cover mold partially covering the carrier mold and a patterned metal layer selectively sandwiched between the cover mold and the carrier mold.

Description

201105196 六、發明說明: 【發明所屬之技術領域】 本發明係_一種射出“式線職構及其製法。特別 是’本發明係關於-種使用較為環保之二次射出方法,來製 得之埋人式線路結構及其製法,其可以更加魏並改善材料 附著性。 鲁 【先前技術】 在電子產品的製作過程中,為了能符合輕、薄、短、小 的消費性需求,通常會使用射出成逛方法來建立產品的硬體 結構,並將導線安排在硬體結構的塑性基材上。第丨_4圖例 示使用習知之二次射出方法,來製造具有導線結構之示意 圖。首先,請參閱第1圖,使用射出成型方法形成一第一塑 件基材110 ’其具有特定之立體形狀。其次,請參閱第2圖, • 再一次使用射出成型方法形成一第 >塑件基材120,其部份 包覆第一塑件基材110,又暴露出部份的第一塑件基材110。 第一塑件基材120與第一塑件基材110之材料一定不相同。 然後’請參閱第3圖,使用咬蝕劑,例如有毒的鉻酸,來處 理結合在一起的第二塑件基材120與第一塑件基材110。由 於第二塑件基材120與第一塑件基讨110之材料並不相同, 其中只有一種塑件基材的表面會被滲钱,例如第一塑件基材 110的表面’而留下多孔隙的粗化痕跡。此後,請參閱第4 201105196 圖,在粗化的表面進行催化與金屬化步驟,而視情況需要, 在第二塑件基材或是第一塑件基材之表面,形成所需的金屬 層 130。 以上之方法其實存在一些問題。首先,來粗化塑件基材 表面的咬蝕劑,通常是有毒的鉻酸,有潛在環境汙染的問 題。其次,在金屬化的步驟中,通常使用化學沉積的方法, 因使用不同的塑件材料而有不同的活化程序或起鍍程序,且 不能使用通用的電鍍流程,不但產率低,而且化學鍍層的耐 焊性不佳。還有,不但,化學鍍層的耐焊性不佳,還因為金 屬層附著在第二塑件基材或是第一塑件基材之表面,會有美 觀,氧化與材料附著性不良等等諸多缺點。另外,在挑選材 料屬性並不相同的第二塑件基材與第一塑件基材之時,還有 塑料相容性的問題。 以上林林總總之狀況,都再再顯示出使用習知之二次射 出方法來製造具有導線線路之塑性基材,仍然有許多的缺點 有待改進。因此,極需一種新穎的射出埋入式線路結構及其 製法,來提升本領域之技術水平。 【發明内容】 本發明即欲提出一種製作射出埋入式線路結構的新穎 方法。本發明的新穎方法無需使用有毒的咬蝕劑,就可以形 成所需的金屬導線,於是避免了潛在環境汙染的問題。其 次,金屬層還可以選擇性隱藏在塑件基材之下,既美觀,又 201105196 沒有氧化與材料附著性不良等等諸多缺點。另夕卜第 基材與第二塑件基材還可以採用主成分相同的材料(註―』件 二次射出的塑件,其溶融點要低於第—次射出的塑件, 完全相同),可減少塑料相容性的問題。使用本發明方 可得到一種新穎的射出埋入式線路結構。201105196 VI. Description of the invention: [Technical field to which the invention pertains] The present invention is a method for producing a "line line structure and its production method. In particular, the invention relates to a method for producing a secondary injection method which is more environmentally friendly. The buried line structure and its manufacturing method can improve the adhesion of the material. Lu [Prior Art] In the production process of electronic products, in order to meet the light, thin, short and small consumer demand, it is usually used. The shooting method is used to establish the hardware structure of the product, and the wires are arranged on the plastic substrate of the hardware structure. The figure _4 illustrates the use of a conventional secondary injection method to fabricate a schematic diagram having a wire structure. Referring to Fig. 1, a first plastic substrate 110' is formed by injection molding to have a specific three-dimensional shape. Secondly, please refer to Fig. 2, and again, using an injection molding method to form a > plastic base. The material 120 partially covers the first plastic substrate 110 and exposes a portion of the first plastic substrate 110. The first plastic substrate 120 and the first plastic substrate 110 must be incompatible with each other. Then, please refer to Fig. 3, using a bite, such as toxic chromic acid, to treat the bonded second plastic substrate 120 and the first plastic substrate 110. Because of the second plastic substrate The material of 120 is not the same as the material of the first plastic part 110, wherein only one surface of the plastic substrate may be oozing, such as the surface of the first plastic substrate 110, leaving a porous roughening mark. Thereafter, refer to Figure 4 201105196 to perform the catalytic and metallization steps on the roughened surface and, if necessary, to form the desired metal layer on the surface of the second plastic substrate or the first plastic substrate. 130. The above methods actually have some problems. First, the bite agent used to roughen the surface of the plastic substrate is usually toxic chromic acid, which has potential environmental pollution problems. Secondly, in the metallization step, it is usually used. The method of chemical deposition has different activation procedures or plating procedures due to the use of different plastic materials, and the general electroplating process cannot be used, which not only has a low yield, but also has poor solderability of the electroless plating. , chemical plating resistance Poor sex, but also because the metal layer is attached to the surface of the second plastic substrate or the first plastic substrate, there are many disadvantages such as aesthetics, oxidation and poor adhesion of materials. In addition, the material properties are not selected. When the same second plastic substrate and the first plastic substrate are used, there is also the problem of plastic compatibility. The above situation shows that the secondary injection method is used to manufacture the wire having the wire. Plastic substrates still have many shortcomings to be improved. Therefore, there is a great need for a novel injection-embedded circuit structure and a method for manufacturing the same to improve the technical level in the art. [Invention] The present invention is intended to provide an injection and burying. A novel method of the incoming circuit structure. The novel method of the present invention can form the desired metal wire without the use of a toxic etchant, thus avoiding potential environmental pollution problems. Secondly, the metal layer can also be selectively hidden under the plastic substrate, which is both aesthetically pleasing, and 201105196 has no disadvantages such as oxidation and poor adhesion of materials. In addition, the second substrate and the second plastic substrate may also be made of the same material as the main component (the second injection of the plastic part, the melting point is lower than the first injection of the plastic part, the same) Can reduce the problem of plastic compatibility. A novel injection-embedded wiring structure can be obtained by using the present invention.

本發明首先提出-種製作二次射出埋入式線路結構的 方法。-開始,纽騎出法形成—載體塑件。其次 载體塑件,以在載體塑件的表面全面性形成一金屬層。然 後’以-覆蓋塑件覆蓋部分的金屬層。接下來,選擇曰性移 金屬層以形成一圖案化金屬層。 * 本發明其次提H次射出埋人式線路結構,包含— 载體塑件、料覆蓋賴塑件之—覆蓋塑件、以及選擇 置於覆蓋塑件與載體塑件間之一圖案化金屬層。 夾 【實施方式】 本發明-開始提供-種製作二次射出埋入式線路結構 的方法。第5-1G關示本發明製作二次射出埋人式線路結 構方法的示意圖。首先,請參閱第5圖,使用第—次射出° 型法形成一載體塑件210。載體塑件21〇會建 $思立埋入式線路 的基本立體結構,通常包含—可活化之觸媒顆粒2ιι。當此 觸媒顆粒211活化之後,例如可以使用或不使用活化劑^ 化。載體塑件210的活化表面,可以輔助另一層的沉積。 體塑件210亦可能不包含觸媒顆粒。 201105196 此等可活化之觸媒顆粒211可以是金屬配位化合物顆 本一中匕括有金屬錯合物顆粒、金屬螯合物顆粒、金屬氧 化物顆粒或是金屬氮化物顆粒等等,例如錳、鉻、鈀、鉑、 紹、鋅、鋼、顧、a 金 '錄、姑、姥、錶、鐵、鶴、叙、钮、 铜、欽其中之一 w β 或疋其任意組合的錯合物、螯合物、氧化物 或氣化物。 、3觸媒顆粒的材料’可用物理和化學活化。如果是不使 7化#1的物理性活化,可以使用光學雷射活化、電聚活 b $刀子射束活化等等方式。如果是不使用活化劑的化學 性活化,可以县#姐, 匕予粗化的方式。化學粗化加工例如是高猛 酸溶液、重銘_ 、、资、六上、 、 ☆液或高質子溶劑等的表面粗化加工方式。 然不含觸媒難的㈣,建議使用 浸泡活化劑的方法活化材 料。 如果想保護载體塑件210的表面,免於任何不欲的損 ^可以形成有機膜層卩覆蓋之。有機膜層之材料種類可為 可以包含親水性高分子,使得必要時可以用水洗去 。例如, 此等親水性焉分子的特性官能基可以包含羥基(_0H) 、醯胺 基(-C〇NH2)、磺酸基(_S03H)、羧基(-COOH)其中之一官能基 團或者刚述各官能基團的任意組合。或者,有機膜層250, 亦可以包含疏水性高分子。例如,此等疏水性高分子之特性 g旎基可以包含甲基丙烯酸樹脂、苯乙烯樹脂、烯丙樹脂、 聚丙烯酸樹脂、聚醚樹脂、聚烯烴樹脂、聚醯胺樹脂、聚矽 氧烷樹脂其中之一官能基團,或者前述各個官能基團的任意 201105196 組合。 其次,請參閱第6圖’使用適當之方式活化載體塑件 210,以在載體塑件210的表面全面性形成一金屬層220。例 如,使用含把(Pd)、銘(Pt)、金(Au)、銅(Cu)等離子 或石墨的活化劑,即/或無電極電鍍法。常用的活化劑可以 是,例如把/錫之膠體(Pd/Sn Colloid),或硫酸把(pdS〇4), 或鈀胺錯合物(Pd(Amine) Complex)等等,後經速化劑 【Accelerator、Reducer,其主成分為二曱基胺蝴烧 (Dimethylamineborane,DMAB)】以還原 pd2+。 在活化載體塑件210前,視情況需要,還可以先粗化載 體塑件210之表面,以協助金屬層22〇之形成與附著,粗化 的同時亦可能使内藏的觸媒顆粒被裸露活化。粗化的方式可 以是利用模具内粗化表面方式,使塑料射出成型的同時^具 有粗化的表面,而粗化表面的範圍可以是全面性,也可以^ 選擇性’以應用於第二次射出覆蓋的接合面之間的結合力加 強作用。另外’在其他的粗化方式也可以是物理粗化二工或 化學粗化加卫。其中物理粗化加工例如是研磨、喷砂、雷射 或電漿等方式的表面粗化加工方式;化學粗化加卫例如是浸 泡溶劑、酸液、含氟酸液及鹼液等的表面粗化加工方式。^ 是預先在載體塑件210上設計卡合件213。例如,在載體塑 件210中形成一嵌件結構213。 金屬層220的厚度,視情況需要可以有所列。例如金 屬層220的厚度通常小於40μηι。還可以使用無電極電鍍法 201105196 配合習知之電鍍法以加速金屬層220的成形。此時,金屬層 220會包含兩種形式之金屬層,即包含一複合結構。視情況 需要,還可以進一步粗化金屬層220之表面。 然後,請參閱第7圖,使用第二次射出法形成一覆蓋塑 件230。覆蓋塑件230會視情況需要,例如依照預計之埋入 式線路結構,選擇性覆蓋部分的金屬層220,亦即暴露出部 分的金屬層220。載體塑件210與覆蓋塑件230的成份可以 相同’也可以不同。例如,載體塑件210與覆蓋塑件230可 以為熱塑性、熱固性之高分子聚合物,例如環氧樹脂、改質 之環氧樹脂、聚脂(polyester)、丙烯酸酯、氟素聚合物 (fluoro-polymer)、聚亞苯基氧化物(p〇lyphenylene oxide)、聚 醯亞胺(polyimide)、酚醛樹脂(phenolicresin)、聚職 (polysulfone)、矽素聚合物(silicone polymer)、BT 樹脂 (bismaleimide triazine modified epoxy)、氰酸聚酯(cyanate ester)、聚乙烯(polyethylene)、聚碳酸酯樹脂(polycarbonate, PC)、丙烯-丁二烯-苯乙烯共聚合物 (acrylonitrile-butadiene-styrene copolymer, ABS copolymer)、聚對苯二曱酸乙二醋(polyethylene terephthalate, PET)樹脂、聚對苯二曱酸丁二醋(polybutylene terephthalate, PBT)樹脂、液晶高分子(liquid crystal polymers, LCP)、聚醯 胺 6(polyamide 6, PA 6)、尼龍(Nylon)、共聚聚曱酸 (polyoxymethylene,POM)、聚苯硫(polyphenylene sulfide, PPS)及環狀稀烴共聚高分子(cyclic olefin copolymer, COC) 201105196 等等多種材料。載體塑件210可能包含,亦可能不包含觸媒 顆粒。 如果金屬層220先前經過粗化步驟,此時即可增強與覆 蓋塑件230間之附著。另一方面,如果載體塑件21〇預先設 计有卡合件213,還可以再更進一步強化載體塑件、金 屬層220與覆蓋塑件230之結合力。 請參閱第8圖’接下來就可以選擇性移除暴露出來的金 •屬層220以形成一圖案化金屬層221二次射出埋入式線路結 構。可以使用,例如蝕刻劑,來協助選擇性移除金屬層 以形成圖案化金屬層221。適用的蝕刻劑可以是氧化劑,例 如硫酸/雙氧水、過硫酸鈉、硝酸與氯化銅等等。並非所有暴 露出來的金屬層22〇都需要移除。如果有暴露出來的金屬声 二需要移除,則可以使用料遮擋之’或是局部塗“ 相料,例如阻劑或膠帶等,使部分未覆蓋塑件的金屬層 •呆留下來,作為後續電性連接之用。請參閱第9圖,春 ^來的金屬層22G漏刻祕刻,而形成”化金“ 、’會因為蝕刻劑的蝕刻作用而留下側蝕結 曰 底切222、回敍或側触㈣back),此乃本發明方^ 人射出埋入式線路結構2〇1中留下之一顯著特徵。 =化金屬層如係依照預計之埋入式線路結構° =其電路形式。圖案化金屬層221中各別之金屬圖冓^ Μ電連接或是電絕緣。請參閱第㈣,若圖案化金: 曰1中各別之金屬圖案彼此間電絕緣時,即各別為孤立之 201105196 金屬圖案223。由於大部分之圖案化金屬層221係夾置於載 體塑件210與覆蓋塑件230之間,既美觀,又沒有氧化與材 料附著性等等諸多缺點。 本發明又提供一種二次射出埋入式線路結構201。請參 閱第8圖,其例示本發明二次射出埋入式線路結構之一實施 例。本發明二次射出埋入式線路結構201,包含載體塑件 210、部分覆蓋載體塑件210之覆蓋塑件230、以及選擇性夾 置於覆蓋塑件230與載體塑件210間之圖案化金屬層221。 載體塑件210與覆蓋塑件230的成份可以相同,也可以不 ® 同。例如,載體塑件210與覆蓋塑件230可以為熱塑性、熱 固性之高分子聚合物,例如環氧樹脂、改質之環氧樹脂、聚 脂、丙烯酸酯、氟素聚合物、聚亞苯基氧化物、聚醯亞胺、 紛酸樹脂、聚颯、碎素聚合物、BT樹脂、氰酸聚S旨、聚乙 烯、聚碳酸酯樹脂、丙烯-丁二烯-苯乙烯共聚合物、聚對苯 二曱酸乙二酯(樹脂、聚對苯二曱酸丁二酯樹脂、液晶高分 子、聚醯胺6、尼龍、共聚聚甲醛、聚苯硫醚及環狀烯烴共 鲁 聚高分子等等多種材料。 較佳者,圖案化金屬層221之表面可以經過粗化,另外, 載體塑件210之表面亦可以經過粗化,以協助其他層之形成 與附著。還有,請參閱第9圖,載體塑件210上也可以設計 有卡合件213。例如,在載體塑件210中形成一嵌件結構 213,好更進一步強化載體塑件210、圖案化金屬層221與覆 蓋塑件230之結合力。 10 201105196 覆蓋塑件230會視情況需要,例如依照預計之埋入式線 路結構,選擇性覆蓋部分的圖案化金屬層221,同時選擇性 暴露出部分的圖案化金屬層221。因此,圖案化金屬層221 中各別之金屬圖案,彼此可以電連接或是電絕緣。請參閱第 11圖,若圖案化金屬層221中各別之金屬圖案彼此間電絕緣 時,即各別為孤立之金屬圖案223。由於大部分之圖案化金 屬層221係夾置於載體塑件210與覆蓋塑件23〇之間,既美 觀,又沒有氧化與材料附著性等等諸多缺點。 •圖案化金屬層221的厚度可以介於8_2〇μπι。由於可以 使用無電極電鍍法配合習知之電鍍法以加速圖案化金屬層 221的成形,所以,圖案化金屬層221可能會包含兩種形式 之金屬層,即包含一複合結構。請參閱第9圖,側蝕結構 222,或是稱為底切222、回㈣側姓(etchback),此乃本發 明二次射出埋入式線路結構2〇1之一顯著特徵。 • 卩上所述僅為本發明之較佳實施例,凡依本發明申請專利矿 所做之均等變化與修娜,皆應屬本發明之涵蓋範圍。 _ 【圖式簡單說明】 來製造具有導 第Μ圖例示使用習知之二次射出方法, 線結構之示意圖。 第5-11圖 法的示意圖。 例示本發日讀作二讀出埋人錢路結構方 201105196 【主要元件符號說明】 110第一塑件基材 120第二塑件基材 130金屬層 201二次射出埋入式線路結構 210載體塑件 211觸媒顆粒 213卡合件 220金屬層 221圖案化金屬層 222底切 223金屬圖案 230覆蓋塑件The present invention first proposes a method of fabricating a secondary injection buried wiring structure. - At the beginning, the New Riding Method forms a carrier plastic part. Next, the carrier is molded to form a metal layer on the surface of the carrier. The metal layer of the portion is then covered with a cover. Next, an inert metal layer is selected to form a patterned metal layer. * The present invention further proposes a H-throw shot buried line structure comprising: a carrier plastic part, a material covering the plastic part, a covering plastic part, and a patterned metal layer selected between the covering plastic part and the carrier plastic part. . [Embodiment] The present invention - the provision of a method of fabricating a secondary injection buried wiring structure. Section 5-1G shows a schematic diagram of a method of fabricating a second shot buried line structure of the present invention. First, referring to Fig. 5, a carrier plastic member 210 is formed using the first injection type method. The carrier plastic part 21 will build the basic three-dimensional structure of the Si Li buried line, usually containing - activated catalytic particles 2ιι. After activation of the catalyst particles 211, for example, an activator may be used with or without an activator. The activated surface of the carrier plastic 210 can assist in the deposition of another layer. The body member 210 may also not contain catalyst particles. 201105196 These activatable catalyst particles 211 may be metal complex compounds, including metal complex particles, metal chelate particles, metal oxide particles or metal nitride particles, etc., such as manganese , chrome, palladium, platinum, sulphur, zinc, steel, Gu, a gold 'record, aunt, 姥, table, iron, crane, Syria, button, copper, one of the two w β or any combination of 疋a substance, a chelate, an oxide or a vapor. The material of the 3 catalyst particles can be activated physically and chemically. If it is not physically activated, optical laser activation, electropolymerization b $knife beam activation, etc. can be used. If it is chemical activation without the use of an activator, you can give it a rough way. The chemical roughening processing is, for example, a surface roughening treatment method of a high-acid acid solution, a heavy-duty _, a capital, a hexahydrate, a ☆ liquid, or a high protic solvent. However, it is recommended to use a soak activator to activate the material without the catalyst being difficult (4). If the surface of the carrier plastic member 210 is to be protected from any undesired damage, an organic film layer can be formed to cover it. The material of the organic film layer may be a hydrophilic polymer, so that it can be washed with water if necessary. For example, the characteristic functional groups of the hydrophilic oxime molecules may comprise one of a hydroxyl group (_0H), a guanylamino group (-C〇NH2), a sulfonic acid group (_S03H), a carboxyl group (-COOH), or just Any combination of individual functional groups. Alternatively, the organic film layer 250 may also contain a hydrophobic polymer. For example, the characteristics of these hydrophobic polymers may include methacrylic resins, styrene resins, allyl resins, polyacrylic resins, polyether resins, polyolefin resins, polyamide resins, polyoxyalkylene resins. One of the functional groups, or any combination of 201105196 of each of the foregoing functional groups. Next, referring to Fig. 6, the carrier plastic member 210 is activated in a suitable manner to form a metal layer 220 on the surface of the carrier plastic member 210 in a comprehensive manner. For example, an activator containing (Pd), Ming (Pt), gold (Au), copper (Cu) plasma or graphite, i.e., electroless plating, is used. The commonly used activator may be, for example, a colloid of Pd/Sn Colloid, or a palladium sulfate (pdS〇4), or a palladium amine complex (Pd(Amine) Complex), etc., followed by a speeding agent. [Accelerator, Reducer, whose main component is Dimethylamineborane (DMAB)] to reduce pd2+. Before the carrier plastic part 210 is activated, the surface of the carrier plastic part 210 may be roughened first, as needed, to assist in the formation and adhesion of the metal layer 22, and the built-in catalyst particles may be exposed while being roughened. activation. The roughening method may be to use a roughening surface in the mold to make the plastic injection molding while having a roughened surface, and the roughening surface may be comprehensive or may be selectively applied to the second time. The bonding force between the exposed joint faces is enhanced. In addition, other roughening methods may be physical roughening or chemical coarsening. The physical roughening processing is, for example, a surface roughening processing method such as grinding, sand blasting, laser or plasma; and the chemical roughening is, for example, a surface roughening of a soaking solvent, an acid liquid, a fluorine-containing acid liquid, and an alkali liquid. Processing method. ^ is to design the engaging member 213 on the carrier plastic member 210 in advance. For example, an insert structure 213 is formed in the carrier plastic member 210. The thickness of the metal layer 220 can be listed as needed. For example, the thickness of the metal layer 220 is typically less than 40 μm. It is also possible to use the electroless plating method 201105196 in conjunction with a conventional electroplating method to accelerate the formation of the metal layer 220. At this point, the metal layer 220 will comprise two forms of metal layers, i.e., comprise a composite structure. The surface of the metal layer 220 may be further roughened as needed. Then, referring to Fig. 7, a cover plastic 230 is formed using the second shot method. The cover plastic part 230 optionally covers a portion of the metal layer 220, i.e., exposes a portion of the metal layer 220, as desired, for example, in accordance with the projected buried line structure. The composition of the carrier plastic member 210 and the cover plastic member 230 may be the same 'may be different'. For example, the carrier plastic part 210 and the cover plastic part 230 may be thermoplastic, thermosetting polymer such as epoxy resin, modified epoxy resin, polyester, acrylate, fluoropolymer (fluoro- Polymer), p〇lyphenylene oxide, polyimide, phenolic resin, polysulfone, silicone polymer, BT resin (bismaleimide triazine) Modified epoxy), cyanate ester, polyethylene, polycarbonate, PC, acrylonitrile-butadiene-styrene copolymer (ABS copolymer) ), polyethylene terephthalate (PET) resin, polybutylene terephthalate (PBT) resin, liquid crystal polymers (LPP), polydecylamine 6 (polyamide 6, PA 6), nylon (Nylon), polyoxymethylene (POM), polyphenylene sulfide (PPS) and cyclic olefin copolymer (cyclic olefin) Copolymer, COC) 201105196 and many other materials. Carrier plastic 210 may or may not contain catalyst particles. If the metal layer 220 has previously been subjected to the roughening step, the adhesion to the overlying plastic member 230 can be enhanced at this time. On the other hand, if the carrier plastic member 21 is previously provided with the engaging member 213, the bonding force of the carrier plastic member, the metal layer 220 and the covering plastic member 230 can be further enhanced. Referring to Figure 8, the exposed gold layer 220 can be selectively removed to form a patterned metal layer 221 for secondary ejection of the buried wiring structure. An etchant, such as an etchant, can be used to assist in selectively removing the metal layer to form the patterned metal layer 221. Suitable etchants can be oxidizing agents such as sulfuric acid/hydrogen peroxide, sodium persulfate, nitric acid and copper chloride, and the like. Not all exposed metal layers 22 need to be removed. If the exposed metal sound 2 needs to be removed, you can use the material to block the 'partial coating', such as resisting or tape, so that some of the metal layers that are not covered with the plastic parts are left behind. For the electrical connection. Please refer to Figure 9. The metal layer 22G in the spring is leaking and engraving, and the formation of "chemical gold" and 'will leave the side etching 222 under the etching action of the etchant. Or the side touch (4) back), which is one of the prominent features left by the invention in the embedded line structure 2〇1. = The metal layer is in accordance with the expected buried line structure ° = its circuit form The respective metal patterns in the patterned metal layer 221 are electrically connected or electrically insulated. Please refer to the fourth (4), if the patterned metal: 各1 is electrically insulated from each other, that is, Isolated 201105196 metal pattern 223. Since most of the patterned metal layer 221 is sandwiched between the carrier plastic part 210 and the cover plastic part 230, it is aesthetically pleasing, and has many disadvantages such as oxidation and material adhesion. Providing a secondary injection buried line junction 201. Please refer to FIG. 8 , which illustrates an embodiment of the secondary injection buried circuit structure of the present invention. The secondary injection buried circuit structure 201 of the present invention comprises a carrier plastic component 210 and a partial cover carrier plastic component 210. The cover member 230 and the patterned metal layer 221 are selectively interposed between the cover member 230 and the carrier member 210. The carrier member 210 and the cover member 230 may or may not be identical in composition. For example, The carrier plastic part 210 and the cover plastic part 230 may be thermoplastic, thermosetting high molecular polymers, such as epoxy resin, modified epoxy resin, polyester, acrylate, fluoropolymer, polyphenylene oxide, Polyimine, acid resin, polyfluorene, fragmentation polymer, BT resin, cyanide polymerization, polyethylene, polycarbonate resin, propylene-butadiene-styrene copolymer, poly-p-phenylene Ethylene phthalate (resin, polybutylene terephthalate resin, liquid crystal polymer, polyamine 6, nylon, copolyacetal, polyphenylene sulfide and cyclic olefin co-polymerized polymer, etc. Preferably, the pattern of the patterned metal layer 221 The surface of the carrier plastic component 210 may also be roughened to assist in the formation and adhesion of other layers. Also, referring to FIG. 9, the carrier plastic component 210 may also be provided with a snap member 213. For example, an insert structure 213 is formed in the carrier plastic member 210 to further strengthen the bonding force between the carrier plastic member 210, the patterned metal layer 221 and the cover plastic member 230. 10 201105196 Covering the plastic member 230 may be as needed. For example, according to the projected buried wiring structure, a portion of the patterned metal layer 221 is selectively covered while selectively exposing a portion of the patterned metal layer 221. Therefore, the respective metal patterns in the patterned metal layer 221 may be mutually Electrical connection or electrical insulation. Referring to Fig. 11, if the respective metal patterns in the patterned metal layer 221 are electrically insulated from each other, they are individually isolated metal patterns 223. Since most of the patterned metal layer 221 is sandwiched between the carrier plastic member 210 and the cover plastic member 23, it is aesthetically pleasing, and has many disadvantages such as oxidation and material adhesion. • The patterned metal layer 221 may have a thickness of 8_2 〇μπι. Since the electroless plating method can be used in conjunction with conventional electroplating to accelerate the formation of the patterned metal layer 221, the patterned metal layer 221 may comprise two forms of metal layers, i.e., comprise a composite structure. Referring to Fig. 9, the undercut structure 222, or the undercut 222, the back (four) side etchback, is one of the salient features of the second shot buried line structure 2〇1 of the present invention. • The above description is only a preferred embodiment of the present invention, and all variations and modifications made by the patent application of the present invention are within the scope of the present invention. _ [Simple description of the drawing] A schematic diagram of a line structure having a conventional secondary injection method is described. A schematic diagram of the method of Figures 5-11. The present invention is read as the second reading of the buried money road structure side 201105196 [main element symbol description] 110 first plastic part substrate 120 second plastic part substrate 130 metal layer 201 secondary injection buried line structure 210 carrier Plastic part 211 catalyst particle 213 engaging piece 220 metal layer 221 patterned metal layer 222 undercut 223 metal pattern 230 cover plastic part

Claims (1)

201105196 七 、申請專利範圓 1. -種一次射出埋人式線路結構,包含: 一载體塑件: 一覆盍塑件’部分覆蓋該载體塑件;以及 -圖案化輪,糊咖___細塑件之間。 2.如明求項1之二次射出埋入式線路結 溫度較該賴低,塑件之熔融 構相同。 彳―㈣刪軸晴讀料主成份結 其中該覆蓋塑件之熔融 體塑件之材料不相同。 3.如睛求項1之二次射出埋人式線路結構, 溫度較該載體塑件低,但該㈣塑件與該載201105196 VII. Application for Patent Fan 1. 1. Once-injected buried line structure, including: a carrier plastic part: a covered plastic part 'partially covering the carrier plastic part; and - patterned wheel, paste coffee _ __ between thin plastic parts. 2. If the temperature of the secondary injection buried line junction of the first item is lower than the temperature, the melting structure of the plastic part is the same.彳―(4) The main component of the cutting material is the same. The material of the molten plastic part covering the plastic part is different. 3. If the second injection of the buried line structure is as follows, the temperature is lower than the carrier plastic part, but the (4) plastic part and the load 4.如請求項1 輪之表面。 之二次射出埋入式線路結構, 其中該載體塑件具有粗 其中該圖案化金屬層具 其中該载體塑件具有一 5.如„月求項i之二次射出埋入式線路結構 有粗經之表面。 6.如請求項1之二次射出埋入式線路結構, 嵌件結構,供該覆蓋塑件嵌合之用。 7.如請求項1之二次射出埋入式線路結 構’其中該覆蓋 塑件選擇性 13 201105196 暴露該圖案化金屬層。 8.如請求項1之二次射出埋入式線路結構, 含孤立之一金屬圖案。 其中s亥圖案化金屬層包 9.如請求項1之二次射出埋入式線路結構, 含一複合結構。 其中该圖案化金屬層包 10.如請求項1之二次射出埋入式線路結構,其中該 之厚度小於40μιη。 圖案化金屬層 11. -種形成二次射出埋人式線路結構的方法,包含: 形成一載體塑件: 活化該載體塑件; 在該載體塑件表面全面性形成一金屬層; 以一覆蓋塑件部分覆蓋該金屬層;以及 選擇性移除該金屬層以形成一圖案化金屬層。 12· >請_ 11之^法’在活化該讎餅前更包含: 粗化該載體塑件之表面,以協助該金屬層之形成。 13.如請求項u之方法,在形成該金屬層後更包含: 粗化該金屬層之表面。 14 201105196 ^ 之方法,在活化該載體塑件前更包含: ⑴料㈣成—嵌件結構,供該覆難件嵌合之用。 15U項11之方法,射該覆蓋餅部分暴露該金屬層。 16.如請求項11之方法’其中該圖案化金屬層包含孤立之-金屬圖 案04. As requested on the surface of the round 1 of the round. a secondary injection-embedded circuit structure, wherein the carrier plastic member has a thickened portion of the patterned metal layer, wherein the carrier plastic member has a 5. The second injection-embedded circuit structure of the monthly solution i has The surface of the roughing. 6. The second injection of the buried line structure and the insert structure for the fitting of the covering plastic part according to claim 1. 7. The second injection of the buried line structure as claimed in claim 1. 'The cover plastic part selectivity 13 201105196 exposes the patterned metal layer. 8. The second injection of the buried line structure according to claim 1 contains an isolated metal pattern. The shai patterned metal layer package 9. The secondary injection structure of claim 1 includes a composite structure, wherein the patterned metal layer package 10. The second injection-embedded line structure of claim 1 wherein the thickness is less than 40 μm. Metallization layer 11. A method for forming a secondary injection buried line structure, comprising: forming a carrier plastic part: activating the carrier plastic part; forming a metal layer comprehensively on the surface of the carrier plastic part; Part Covering the metal layer; and selectively removing the metal layer to form a patterned metal layer. 12· > Please _ 11 method 'Before activating the crepe cake further comprises: roughening the surface of the carrier plastic part, To assist in the formation of the metal layer. 13. The method of claim u, after forming the metal layer, further comprises: roughening the surface of the metal layer. 14 201105196 ^ The method further comprises: before activating the carrier plastic part: (1) Material (4) into an insert structure for fitting the covering member. The method of 15U item 11 exposes the covering portion to expose the metal layer. 16. The method of claim 11 wherein the patterned metal layer Contains isolated - metal pattern 0 17. 如青’、之方法’其中使用一侧劑選擇性移除該金屬層。 18. 如靖求=17之方法’其中該飿刻劑包含硫酸/雙氧水、過硫酸 鈉、硝酸或氯化鋼其中之一。 19.如請求項11之方法,其中該載體塑件包含一觸媒顆粒。 • 20. -種二次射出埋入式線路結構,由請求項n之方法所製得,盆 特徵在於,該圖案化金屬層具有一底切、回碱纖結構。” 八、圖式: 1517. The method of ', wherein the metal layer is selectively removed using a side agent. 18. The method of claim ??? wherein the etchant comprises one of sulfuric acid/hydrogen peroxide, sodium persulfate, nitric acid or chlorinated steel. 19. The method of claim 11, wherein the carrier plastic component comprises a catalyst particle. • 20. A secondary injection buried line structure, produced by the method of claim n, wherein the patterned metal layer has an undercut, return to alkali structure. Eight, schema: 15
TW98124213A 2009-07-17 2009-07-17 Two shot moulding and method for making the same TWI459877B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104975276A (en) * 2014-04-11 2015-10-14 深圳市泛友科技有限公司 Method of forming selective metal circuit on plastic surface and plastic part
TWI627885B (en) * 2013-04-12 2018-06-21 Seiren Co Ltd Method for producing three-dimensional conductive pattern structure and material for three-dimensional molding used there

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI627885B (en) * 2013-04-12 2018-06-21 Seiren Co Ltd Method for producing three-dimensional conductive pattern structure and material for three-dimensional molding used there
CN104975276A (en) * 2014-04-11 2015-10-14 深圳市泛友科技有限公司 Method of forming selective metal circuit on plastic surface and plastic part
CN104975276B (en) * 2014-04-11 2019-07-12 深圳市泛友科技有限公司 The method and plastic components of selective metal route are formed in frosting

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