TWI360834B - Connection member, ground structure, heater and ap - Google Patents
Connection member, ground structure, heater and ap Download PDFInfo
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- TWI360834B TWI360834B TW096148448A TW96148448A TWI360834B TW I360834 B TWI360834 B TW I360834B TW 096148448 A TW096148448 A TW 096148448A TW 96148448 A TW96148448 A TW 96148448A TW I360834 B TWI360834 B TW I360834B
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- grounding
- connecting member
- terminal
- seat
- curved
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/46—Bases; Cases
- H01R13/53—Bases or cases for heavy duty; Bases or cases for high voltage with means for preventing corona or arcing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R24/00—Two-part coupling devices, or either of their cooperating parts, characterised by their overall structure
- H01R24/38—Two-part coupling devices, or either of their cooperating parts, characterised by their overall structure having concentrically or coaxially arranged contacts
- H01R24/40—Two-part coupling devices, or either of their cooperating parts, characterised by their overall structure having concentrically or coaxially arranged contacts specially adapted for high frequency
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
Description
26724pif.doc 九、發明說明: 本申請案主張於2007年】〇月25曰所提出申請之韓 國專f申請Ϊ第,7_ 1 〇7927號的優先權,該專利申請案 所揭路之内谷係元整結合於本說明書中。 【發明所屬之技術領域】 μ 明是有關於連接構件、包含該連接構件之接地結 構、加熱盗以及基板處理裝置。特別是,本發明是有關於 =Γ=至接地座的連接構件、包括該連接構件之 接地結構、加熱以及基板處理裝置。 【先前技術】 美導欠體元件藉由以下製程進行製造:在半導體 基板上祕I路之電路製程(fab㈣叫、職半導體元件 之電性特性的電晶粒分類(electncal dle sortlng,EDS)製 程以竹用1氧樹賴裝半導體元件並將半導體基板分割 (smgulate)成半導體晶片的封裝製程。 電路製程可包括在半導縣板形成層的沈積製程 CMpi! mechanical polishing, 制^ 形成光阻圖案的微影(沖。滅_响) 4、將此層形成料紐雜之圖案祕 板内的離子植入製程、移除半導體基板上 之異月洗製程、乾燥已清洗之半導體基板的乾燥製程 以及偵測層或圖案内之缺陷的測試製程。 現在,電漿強化的化學蒸氣沈積⑼纏請h繼d chenucal vapor depositi〇n,p£CVD)裝置廣泛地用以電路製 1360834 26724pif.doc26724pif.doc IX. Inventor's Note: This application claims the priority of the Korean Patent Application No. 7_1〇7927, which was filed in 2007, the application for the patent application. The elements are integrated into this specification. TECHNICAL FIELD OF THE INVENTION The present invention relates to a connecting member, a grounding structure including the connecting member, a heat thief, and a substrate processing apparatus. In particular, the present invention relates to a connecting member of =Γ= to a grounding seat, a grounding structure including the connecting member, heating, and a substrate processing apparatus. [Prior Art] The semiconductor component is manufactured by the following process: the circuit process of the semiconductor circuit on the semiconductor substrate (fab (four), the electrical crystal classification of the electrical characteristics of the semiconductor component (electncal dle sortlng, EDS) process A packaging process in which a semiconductor device is immersed in a semiconductor device and a semiconductor substrate is smgulated into a semiconductor wafer. The circuit process may include a deposition process in a semi-conducting plate formation layer, and a photoresist pattern is formed. The lithography (rushing. extinguishing _ ringing) 4. The ion implantation process in the pattern of the layer is formed, the different month washing process on the semiconductor substrate is removed, and the drying process of the dried semiconductor substrate is dried. And a test process for detecting defects in layers or patterns. Now, plasma-enhanced chemical vapor deposition (9) is required to be widely used in circuit systems 1360834 26724pif.doc
程’其將處理氣體(process gas)激發成電漿態以形成層或圖 案。習知的PECVD裝置可包括腔室,其具有對半導體基 板進行處理的空間;加熱器,位於腔室内以加熱半導體基 板;以及電極,將引入腔室的反應氣體形成電漿氣體。加 熱器可包括加熱塊、内建於加熱塊内的加熱電極以及内建 於加熱塊内的接地結構。在韓國實用新型申請第 號中公開了一種接地結構的實例。The process 'fires the process gas into a plasma state to form a layer or pattern. A conventional PECVD apparatus can include a chamber having a space for processing a semiconductor substrate, a heater located within the chamber to heat the semiconductor substrate, and an electrode to form a plasma gas into the reaction gas introduced into the chamber. The heater may include a heating block, a heating electrode built into the heating block, and a grounding structure built into the heating block. An example of a grounding structure is disclosed in Korean Utility Model Application No.
圖1疋習知接地結構的透視圖,而圖2則是圖丨的接 地結構内之導電片以及夾具的透視圖。 蒼照圖1和圖2,接地結構丨包括用以夾緊接地端子 20的夾具以及連接於夾具3〇和接地底座1〇之間以形成接 地路徑的導電片40。夾具3〇與導電片4〇以及導電片4〇 與接地底座10分別使用螺絲50來彼此固定。Fig. 1 is a perspective view of a conventional ground structure, and Fig. 2 is a perspective view of a conductive sheet and a jig in the ground structure of Fig. Referring to Figures 1 and 2, the ground structure includes a clamp for clamping the ground terminal 20 and a conductive sheet 40 connected between the clamp 3 and the ground base 1 to form a ground path. The jig 3 and the conductive sheet 4A and the conductive sheet 4A and the ground base 10 are fixed to each other using screws 50, respectively.
然而,由於失具30、導電片4〇以及接地底座1〇使用 螺絲50彼此組合,可能在失具3Q與導電片4Q以及導電片 4〇與接地底座10之間產生接觸不良(c〇ntact促㈣。因 而在夾具3〇與導電片4〇以及導電片4 之間發生電弧放電(arcing)。 - 進一步’由於導電片40^形,用以將處理氣體轉換 成電漿^頻功率可集中於導電片40的彎曲部份。因而, 集中的高頻功率可能會切割導電片 【發明内容】 ' 種月b夠將接地端子穩定地連接 本發明之實施例提供了 至接地座的連接構件。 6 26724pif.doc 26724pif.doc 本發明之實施例還提供了〜種包含上述連接構件的接地 本發明之實施顺提供了 1包含上述連接構件的加熱 本發明之實施例還提供了〜 處理裝置。 種i3上述連接構件之基板 ,據本發日月-方面的連接構件包 ‘弓·,曲部。夹持部保持接地端子。 ^ 1 u疋0卩以及 部連接於雜_定部傷接地座上。彎曲 地端子的長度方向移動。 心曲成允枝持部沿接 結構 器。 彎曲部一體成型 根據-實施例,夹持部、目定部以及$ 括相同的例夾持°卜固定部以及彎曲部實質上包 於夾2另—實施例,夹持部、蚊部以及‘f曲部具有形成 以及:曲部之表面部份的不平部份 而形成多個孔^例,“部可為平板形的,貫穿此平板形 ^步,彎曲部的厚度為大約lmm至大約3醜。 此外,彎曲部具有不平的表面。- 之間部麵料从料部與央持部 進—步’圓形連接部的半徑為大約G.5mm至大約3rnm。 之門據另—實施例,夹持部可包括二平板以及連接於平板 曰勺曲板以形成容置接地端子的容置孔。 26724pif.doc 於容置進=的=構件可包括插人上述如將接地端子固定 根據本發明另—方面的接地結構包括接地座 =及連接構件。接地端子可機地插人接軸。連接構件^導 Z的夾持具⑽㈣電性連接至接地座。進一步,連仲 著接地端子的熱膨脹沿接地端子的長度方向彎曲。 通 根據-實闕’連接構件可包括用以倾接地端子 ==/娜破上的蚊部⑽輕於娜咖定部之 曲部。料部彎曲成允許娜嶋地端子的長度方向 的絕=糊,胸娜姆_夹持部之間 ,據另-實施例,接地座可具有容置連接構件的容置空 曰違一步,容置空間由絕緣蓋體所覆蓋。 =康本發明另-方面的接地結構包括接地座、接地端 可梦#Λ構件以及絕緣構件。接地座具有容置空間。接地端子 接插入齡座並且經由容置空間暴露出來。連接構件將 子的± it電性連接至接地座。連接構件包括彈性地保持接地端 子的夹持部、岐於容置空間之側面_定部以及連接 部與固定部之_彎曲部。夾持部為平板形的,貫穿平板形^ =多個孔。彎'曲部彎曲成允許夾持部沿接地端子的長度^向 私動。絕緣構件介於接地座與夾持部之間。 ° 根據-f補,接地結構更包域餘置如的蓋體。 根據另-實施例,夾持部、固定部以及彎曲部一體成型。 1360834 26724pif.doc 之間曲部與_及彎曲部與夹持部 根據本發明另—方面的加_包括加熱塊、加執元件、 =、接地座、接地端子以及連接構件。加熱元件内建於加 端°接地座安躲加熱塊上。接地 知子可移動地插人接地座。進—步,接 ^ 極。連接構件科電的祕具魏連接娜心。進 接„接地端子的熱膨服沿接地端子的長度方向彎曲, -發明另—方面的基板處理裝置包括腔室、加敎 供構件以及上電極。腔室容置基板。加敎器配 的上加熱基板。反應氣體提供構件定位於腔室 反應:體體。上電極配置於腔室内以從 下電極内建於加熱塊内連 移動地插人接地座义―步,接地端子^^接地端子可 接構件將導電的夹持具電性連接至接地座。連 隨著喃m沿接地端子的長度方向㈣ 連接;ttr因而連接由構件可為一體結構以將接地端子電性 接觸从,目料會發^^^。輕鱗的細份之間的 接部=的部以及彎曲部與夾持部之間的連 也不會被切害:。即使高頻功率集中於連接部上,彎曲部 9 1360834 26724pif.doc 【實施方式] 述本顯示本發明之實施例的附圖更全面地描 “"而,本發明能夠以不同的形式實現並且不應 於本案所闡述的實施例。更確切而言,提供 巧為了使本公開内容透徹且完整’並向本領域 清晰全面表達本發明的範圍。在附圖中,為了 巧大了層和區域的尺寸以及相對尺寸。 應理解,Α甘 “耦接於,,另一 *某一元件或層被稱為“位於,,、“連接於,,或 輕接於此/時或層上時,它可以直接位於、連接於或 之,當if飞件或層上,或者也可以存在中間元件。反 耦接於,,另為“直接位於”、“直接連接於,,或“直接 附圖中,相m層上時’不存在中間元件或層。在所有 術語“和/或,,勺Lr示相似的元件。如本案所使用的, 所有組合i目關崎物品的"個❹個的任意以及 要理% ’儘管使,,“》 元件、部件、區域r/ ^、弟二’’等來描述各種 域、層和/或部份或部份,料些元件、部件、區 區分-元件'部:^^,語所限制。這些術語僅用以 /或部份。因而,在不層或部份與另-區域、層和 ,的第-元件、部件、區況下,下文所 件、^牛、區域、層和/或部份。曰伤可稱為第二元 :::目對術語,例如“下方”、' 上Μ及類似術語, 下、上方,,、 月中使用疋為了便於描述附圖 26724pif.doc 2示個元件或零件與另—元件或零件的_。㈣ 二方位,空間相對術語意圖二 二,作%的不问方位。例如,如果翻轉附圖中, 則描述為位於其他元件或零件“下面,,或“下 、^ Π此其他元件或零件的“上面”。因而 =面, 語進行相應解釋。)亚本申请所使用的空間相對術 本案所使用的術語僅是為 請所=== =示存麵_的贿、歸、频、m中使用時 :;排:=-個或多個其二= 邛兀件、部件和/或其族群。 夕 技術:::二他二定義,本申請所使用的所有術語(包括 ;者所通知此二 這樣定義。π <的形式進行解釋’除非本案中明確 圖。圖3 4示根據本發明—實施_接地結構的透視 1360834 26724pif.doc 蒼照圖3 ’本實施例的接地結構i〇〇包括接地座丄川 接地端子120、連接構件】3〇、絕緣構件14〇以及蓋體】5〇 接地座11〇可為柱形的。在本實施例中,接地座 可包括導電材質,例如鋁。接地座11〇具有容置空間 以及第一孔]14。 谷置空間112形成於接地座11〇的側面。容置空間η] ”’二接地座110的上面暴露出來。在本實施例中,容置空間 112具有四分之—圓(quarter_circular)的截面。進一步,連 接谷置空間112的第二孔(未圖示)可垂直貫穿接地座110 而形成。 ί -孔114垂直貫穿接地座110形成。加熱器(未圖示) ^未圖不)以及向電極(未圖示)供應電流的電纜 (未圖不)容置於第一孔114内。 ΐΪ地^ 120插入第二孔。第二孔内的接地端子120 Ϊ徑實施例中’接地端子⑽的 上可移動H 此’接地端子120在垂直方向 接地端子12牙0 ^一/匕。接地端子120可包括鎳。進一步, (未圖示)。 谭(Μ—)製程連接至加熱器的電極 將接内°連接構件130 ' ΛΑ 琶性連接至接地端子120。 1日中的接地結構的連接構件的透視圖。 部13::^::,=13。包括夾持部咖 弟一螺絲138以及第二螺絲139。 1360834 26724pif.doc 爽持部⑶定位於容置空間112 夹持部 厚度很薄的彈性板。央持部132可為中部弯·曲的u形了 中,夹持部132包括二垂直板1323和1325以及 曲板!32c。此二垂直板132Μσ 132b分別具有第 =亩m?32c連接於垂直板咖和咖的側面之間以 使垂直板⑽和132b彼此。岐13However, since the dislocation 30, the conductive sheet 4〇, and the grounding base 1〇 are combined with each other using the screw 50, contact failure may occur between the dislocation 3Q and the conductive sheet 4Q and the conductive sheet 4〇 and the grounding base 10 (c〇ntact promotion) (4) Thus, arcing occurs between the clamp 3〇 and the conductive sheet 4〇 and the conductive sheet 4. Further, due to the shape of the conductive sheet 40, the processing gas can be converted into a plasma power. The curved portion of the conductive sheet 40. Thus, the concentrated high-frequency power may cut the conductive sheet. [Inventive content] The month of the invention is sufficient to stably connect the ground terminal. The embodiment of the present invention provides a connecting member to the grounding seat. 26724pif.doc 26724pif.doc Embodiments of the present invention also provide a grounding comprising the above-described connecting member. The present invention provides a heating comprising the above connecting member. The embodiment of the present invention further provides a processing device. The substrate of the above-mentioned connecting member is provided with a bow member and a curved portion according to the connection member of the present invention. The holding portion holds the grounding terminal. ^ 1 u疋0卩 and the portion is connected to the miscellaneous portion. The bending terminal is moved in the longitudinal direction. The bending portion is formed along the coupling structure. The bending portion is integrally formed. According to the embodiment, the clamping portion, the positioning portion, and the same example are used to clamp the fixing portion and the bending portion. In the embodiment, the clamping portion, the mosquito portion, and the 'f curved portion have a plurality of holes formed by forming and forming an uneven portion of the surface portion of the curved portion, and the portion may be in the shape of a flat plate. Throughout the plate shape, the thickness of the curved portion is about 1 mm to about 3 ug. In addition, the curved portion has an uneven surface. - The fabric between the fabric and the central portion is stepped from the circular portion. The radius is from about G.5 mm to about 3 rnm. According to another embodiment, the clamping portion may include two flat plates and a receiving plate connected to the flat plate to form a receiving hole for accommodating the grounding terminal. 26724pif.doc The member that is placed in = can include the above-mentioned grounding structure, such as fixing the grounding terminal according to another aspect of the invention, including the grounding seat = and the connecting member. The grounding terminal can be mechanically inserted into the shaft. The holder (10) (4) is electrically connected to the grounding seat. In one step, the thermal expansion of the grounding terminal is bent along the length of the grounding terminal. The connecting member of the connecting body may include a mosquito (10) for tilting the ground terminal ==/ Na is broken. The material portion is bent to allow for the length direction of the terminal of the terminal, and between the chest and the clamping portion. According to another embodiment, the grounding seat may have a space for accommodating the connecting member. The accommodating space is covered by the insulating cover body. The grounding structure of the other aspect of the invention includes a grounding seat, a grounding end, and an insulating member. The grounding seat has an accommodating space. It is exposed through the accommodating space, and the connecting member electrically connects the sub-it of the sub-unit to the grounding seat. The connecting member includes a holding portion that elastically holds the grounding end, a side portion that is disposed in the accommodating space, and a bent portion that connects the connecting portion and the fixing portion. The clamping portion has a flat shape and penetrates the flat plate shape and has a plurality of holes. The curved 'curved portion is bent to allow the nip portion to be privately moved along the length of the grounding terminal. The insulating member is interposed between the grounding seat and the clamping portion. ° According to the -f compensation, the grounding structure is more covered with a cover. According to another embodiment, the clamping portion, the fixing portion, and the curved portion are integrally formed. 1360834 26724pif.doc Between the curved portion and the _ and the curved portion and the nip portion ADD according to another aspect of the present invention includes a heating block, an urging member, a =, a grounding seat, a grounding terminal, and a connecting member. The heating element is built into the grounding seat and the heating block. Grounding The zizi is movably inserted into the grounding base. Step-by-step, connect to the pole. The secret of connecting the components of the company is connected with the heart. The heat-expanding device that feeds the grounding terminal is bent along the length direction of the grounding terminal, and the substrate processing device of the invention includes a chamber, a twisting member, and an upper electrode. The chamber accommodates the substrate. The substrate is heated. The reaction gas supply member is positioned in the chamber reaction body: the upper electrode is disposed in the chamber to be inserted into the heating block from the lower electrode, and is inserted into the grounding block. The grounding terminal can be grounded. The connecting member electrically connects the conductive clamping member to the grounding seat. The connecting member is connected along the length direction of the grounding terminal (4); ttr is thus connected to the component by an integral structure to electrically contact the grounding terminal, and the material is met. The portion of the joint between the fine portion of the light scale and the joint between the curved portion and the nip portion are not damaged: even if the high-frequency power is concentrated on the joint portion, the bent portion 9 1360834 26724pif.doc [Embodiment] The drawings showing embodiments of the present invention are more fully described as "and" the present invention can be embodied in various forms and not in the embodiments set forth herein. Rather, the scope of the present invention is to be fully described in the light of the present disclosure. In the drawings, the dimensions and relative sizes of the layers and regions are exaggerated. It should be understood that “an” is “coupled to,” another element or layer is referred to as “located,”, “connected to,” or “lighted” to the layer or layer. Or, when an if flying member or layer, or there may be intermediate elements, the anti-coupling is connected to, and is also "directly located", "directly connected to," or "directly in the drawing, on the phase m layer. 'There is no intermediate element or layer. In all terms "and / or,, spoon Lr shows similar elements. As used in this case, all combinations of i-Minaki items are arbitrarily selected as well as '%, though, '" elements, parts, regions r/^, 弟二'', etc. to describe various fields. , layers and / or parts or parts, materials, components, divisions - components ': ^ ^, language restrictions. These terms are only used / or part. Therefore, in layers or parts In addition, the elements, components, and regions of the regions, layers, and regions, the following, the cattle, regions, layers, and/or portions. The bruises may be referred to as the second element::: "Bottom", 'Captain' and similar terms, lower, upper,,, and mid-month are used for convenience of description. Figure 26724pif.doc 2 shows a component or part with another element or part. (4) Two orientations, space relative The terminology is intended to be used in the context of the singularity. For example, if the figure is turned over in the drawings, it is described as being "below," or "below" the other elements or parts. Face, language to explain accordingly.) The space used in the application of this book is relative to the technique used in this case. It is only used for the bribe, return, frequency, and m in the case of the === = deposit surface:; row: = - one or more of the two = components, parts, and / or their ethnic groups. ::: Two definitions, all terms used in this application (including; those who are notified of this two definitions. The form of π < is interpreted 'unless explicitly in this case. Figure 34 shows the invention according to the invention - implementation _ Perspective of the grounding structure 1360834 26724pif.doc 照照图 3 'The grounding structure i of the present embodiment includes the grounding base 接地chuan grounding terminal 120, the connecting member 〇 3 〇, the insulating member 14 〇 and the cover body 5 〇 grounding seat 11 In this embodiment, the grounding seat may comprise a conductive material, such as aluminum. The grounding seat 11 has a receiving space and a first hole] 14. The valley space 112 is formed on the side of the grounding seat 11〇. The accommodating space η] ′′ is exposed on the upper surface of the two grounding seats 110. In the embodiment, the accommodating space 112 has a quarter-circular cross section. Further, the second hole connecting the arranging spaces 112 (not shown) can be formed vertically through the grounding base 110. ί - The hole 114 runs vertically The seat 110 formed heater (not shown) FIG does not ^) and the electrode (not shown) for supplying current cable (not not) received in the first hole 114. Insert the ground hole ^ 120 into the second hole. The grounding terminal 120 in the second hole is in the embodiment. The grounding terminal (10) is movable H. The grounding terminal 120 is in the vertical direction. The grounding terminal 12 is 0^1/匕. The ground terminal 120 can include nickel. Further, (not shown). The Tan ()) process is connected to the electrode of the heater to connect the internal connection member 130' to the ground terminal 120. A perspective view of the connecting member of the grounding structure in the 1st. Part 13::^::,=13. The nipple is a screw 138 and a second screw 139. 1360834 26724pif.doc The holding part (3) is positioned in the accommodating space 112. The clamping part is a thin elastic plate. The central portion 132 can be a u-shaped middle curved piece, and the clamping portion 132 includes two vertical plates 1323 and 1325 and a curved plate! 32c. The two vertical plates 132 Μ σ 132b respectively have a _mu m? 32c connected between the sides of the vertical slab and the coffee to make the vertical plates (10) and 132b mutually.岐13
端子120的容置侧。因此,容置孔心::: 地端子120的直徑實質上相同。結果,夹持部]3圍 置於容置孔132d内之接地端子的外表面。 口合 第-職138經第-螺絲孔132e而固定二垂直板 32&和132b。因而,夹持部132緊固接地端子⑽。進— 夹持部m之内表面緊密地接觸接地端子㈣的外表 此時’由於接地端子12()的上直徑大於夹持部132的 2孔132d之直徑,在沒有鬆開第一螺絲138的情況下, 接地端子12〇不會從夾持部132鬆開。 口疋°卩丨34配置於谷置空間112内。固定部134與接 座110接觸。此時,由於固定部134為垂直平板形的, 固定部134與接地座U0之間的接觸面積變大。進一步, 固定部134具有第二螺絲孔134a。 蛊第二螺絲139經第二螺絲孔13如彼此緊固固定部134 -、接,座110。因而,固定部134緊密地接觸接地座11〇。 ’暫曲部136連接於夾持部132與固定部134之間。在 本實施例中,彎曲部137可將夹持部132中的二垂直板 13 1360834 26724pif.doc 132a和132b的任意一上端連接至固定部134的上端。例 如,彎曲部136為平板形的,貫穿此平板形而形成多個第 三孔136a。進一步,第三孔136a可具有各種形狀,例如 四角形、圓形、搞圓形等。此時,由於彎曲部136具有第 二孔136a,言曲部136可輕易地·彎曲。或者,彎曲部136 可以是無孔的平板形。 在本實施例中,彎曲部136的厚度可為大約lmm至 大約3mm。當將反應氣體轉換成電漿的高頻功率施加到彎 曲部136上時,彎曲部136的上述厚度可提供具有耐久性 的彎曲部136。進-步’彎曲部136 f曲成允許保持接地 端子120的夾持部132隨著接地端子12〇的熱膨脹而沿接 地端子120的長度方向移動。此外,如上文所提到的,由 於夾持部132在垂直方向上移動,由加熱器的高溫所引起 ,接地端子120的熱膨脹不會受到限制。結果,不會對硬 焊到加熱器上的接地端子120進行切割。 此時,當彎曲部136的厚度低於大約lmm時,弯曲 部136可能會由於高頻功率而裂開。反之,當彎曲部既 的厚度超過大約3mm,彎曲部136不易彎曲。 進一步’彎曲部136與固定部134以及彎曲部136盘 夹持部132之間的連接部可以是圓形的。此時,高頻功率 =中於連接部上。因而’圓形連接部的厚度很厚以允許 ,接部耐受高頻功率。在本實施例中,圓形連接部的半徑 R可為大約0.5mm至大約3mm。 此時,當半徑R低於大約〇.5_ B夺,連接部可能會由 14 1360834 26724pif.doc 於高頻功率而裂開°反之,當半徑R超過大約3麵,由於 連接部太厚,彎曲部136不易彎曲。 在本實施例中,夹持部132、固定部134以及彎曲部 136可具有不平的表面。夾持部132、固定部134以及彎曲 部1巧之不平的表面可用以增加連接構件η〇的表面積。 、,尚頻功率經連接構件130的表面傳送。高頻功率的傳 迗路,正比於連接構件13〇之表面積的增加而變大。因 此,同頻功率可分散傳送,使得連接構件13〇不會被損壞, 由此延長了連接構件130的壽命。藉由噴珠⑽心以如g) 製程、噴砂(sand blasting)製程、化學蝕刻(chemical滅㈣ 製程等形成連接構件130的不平的表面。 或者,高頻功率經彎曲部136傳送。因而,不平部份 僅形成於彎曲部136的表面。結果,高頻功率可分散地傳 达’使得¥曲部136不會損壞’藉此延展連接構件13〇 的壽命。 進一步,夾持部132、固定部134以及彎曲部136可 一體成型。因此,不會在夾持部132與彎曲部136以及固 定部134與彎曲部136之間產生接觸不良,不會發生電弧 放電。 在本實施例中’夾持部132、固定部以及彎曲部136 可包括實質上相同的導電材質。導電材質的實例可包括鈹 (beryllium,Be)、銅(COpper,Cu)及其合金等。 圖5至圖7是繪示根據本發明其他實施例之連接構件 的透視圖。 15 1360834 26724pif.doc 圖5至圖7内的連接構件130包括的元件與圖3内的 連接構件130除了彎曲部的連接部不同之外實質上都相 同口此相同的參考標號表示相同的元件,並且為了簡 潔起見省略了針對相同元件的進一步說明。 參照圖5,彎曲部136將夾持部132中的二板體n2a 和132b的任意一下端連接到固定部134的下端。 參照圖6,彎曲部136將夾持部132内的二板體132a 和132b的任意一前端連接至固定部134的前端。 ,參照圖7,彎曲部136將夾持部132内的二板132&和 132b的任意一中端連接至固定部134的中端。 再次參照圖3和圖4,絕緣構件14〇介於接地座11〇 與連接構件130的夾持部132之間以使得接地座11〇與夾 持部132電性絕緣。絕緣構件14〇包括第一絕緣體142和 第二絕緣體144。 苐纟巴緣體142配置於接地座π〇的側面與夾持部 132之間即’位於谷置空間112的侧面。第二絕緣體144 配置於接地座110的底面與夾持部132之間,即,位於容 置空間112的底面上。 盍體150覆盍容置空間112。蓋體150防止接地端子 120與連接構件130暴露於外面。在本實施例中,蓋體15〇 可包括絕緣材質。因此,接地端子12〇與蓋體15〇之間以 及連接構件130與蓋體150之間不會發生電弧放電。 根據本實施例,第—螺絲138固定夾持部132,使得 夾持部132緊密地接觸接地端子12〇。因而,在接地端子 16 1360834 26724pif.doc =〇 S接構件13〇之間不會發生電弧放電。進 134以及彎曲部136-體成型,不 會發生由於夾持部132_㈣136之㈣及固 與料:13:之間的接觸不良而引起的電弧放電。。 於存在彎曲部136,夾持部咖沿垂直方 ^易地移動,使得接地端子·的熱膨脹不會受到限 制。因此’不會對接地端子12〇進行切割。The accommodating side of the terminal 120. Therefore, the diameter of the receiving hole::: the ground terminal 120 is substantially the same. As a result, the nip portion 3 surrounds the outer surface of the ground terminal in the accommodating hole 132d. The mouth-to-job 138 is secured to the two vertical plates 32& and 132b via the first screw holes 132e. Thus, the clamping portion 132 fastens the ground terminal (10). The inner surface of the clamping portion m closely contacts the outer surface of the grounding terminal (4). At this time, since the upper diameter of the grounding terminal 12() is larger than the diameter of the second hole 132d of the clamping portion 132, the first screw 138 is not loosened. In this case, the ground terminal 12A is not released from the clamping portion 132. The port 卩丨 34 is disposed in the valley space 112. The fixing portion 134 is in contact with the socket 110. At this time, since the fixing portion 134 has a vertical flat plate shape, the contact area between the fixing portion 134 and the grounding seat U0 becomes large. Further, the fixing portion 134 has a second screw hole 134a. The second screws 139 are fastened to the fixing portion 134 - , and the seat 110 via the second screw holes 13 . Thus, the fixing portion 134 closely contacts the grounding seat 11A. The temporary curved portion 136 is connected between the clamping portion 132 and the fixed portion 134. In the present embodiment, the bent portion 137 can connect any one of the upper ends of the two vertical plates 13 1360834 26724pif.docs 132a and 132b in the holding portion 132 to the upper end of the fixing portion 134. For example, the curved portion 136 has a flat plate shape, and a plurality of third holes 136a are formed through the flat plate shape. Further, the third hole 136a may have various shapes such as a quadrangle, a circle, a round shape, or the like. At this time, since the curved portion 136 has the second hole 136a, the curved portion 136 can be easily bent. Alternatively, the curved portion 136 may be a non-porous flat plate shape. In the present embodiment, the thickness of the curved portion 136 may be from about 1 mm to about 3 mm. When the high frequency power for converting the reaction gas into the plasma is applied to the bent portion 136, the above thickness of the bent portion 136 can provide the bent portion 136 having durability. The advancement-bending portion 136f is curved to allow the nip portion 132 of the holding ground terminal 120 to move in the longitudinal direction of the ground terminal 120 in accordance with thermal expansion of the ground terminal 12''. Further, as mentioned above, since the nip portion 132 moves in the vertical direction, caused by the high temperature of the heater, the thermal expansion of the ground terminal 120 is not limited. As a result, the ground terminal 120 hard soldered to the heater is not cut. At this time, when the thickness of the bent portion 136 is less than about 1 mm, the bent portion 136 may be cracked due to high frequency power. On the other hand, when the thickness of the bent portion exceeds about 3 mm, the bent portion 136 is not easily bent. Further, the connecting portion between the curved portion 136 and the fixed portion 134 and the curved portion 136 of the curved portion 136 may be circular. At this time, the high frequency power = is in the connection portion. Thus, the thickness of the circular joint is thick to allow the joint to withstand high frequency power. In this embodiment, the radius R of the circular joint may be from about 0.5 mm to about 3 mm. At this time, when the radius R is lower than about 〇.5_B, the connection may be split by the high frequency power of 14 1360834 26724pif.doc. Conversely, when the radius R exceeds about 3, the connection is too thick, bent. The portion 136 is not easily bent. In the present embodiment, the grip portion 132, the fixing portion 134, and the curved portion 136 may have an uneven surface. The uneven surface of the holding portion 132, the fixing portion 134, and the curved portion 1 can be used to increase the surface area of the connecting member η. The frequency power is transmitted through the surface of the connecting member 130. The transmission path of the high-frequency power is increased in proportion to the increase in the surface area of the connecting member 13A. Therefore, the same-frequency power can be dispersedly transmitted, so that the connecting member 13 is not damaged, thereby prolonging the life of the connecting member 130. The uneven surface of the connecting member 130 is formed by a bead (10) process such as a g) process, a sand blasting process, a chemical etching process, or the high frequency power is transmitted through the bent portion 136. The portion is formed only on the surface of the curved portion 136. As a result, the high-frequency power can be dispersedly conveyed 'so that the bent portion 136 is not damaged' thereby extending the life of the connecting member 13A. Further, the holding portion 132 and the fixing portion The 134 and the curved portion 136 can be integrally formed. Therefore, no contact failure occurs between the nip portion 132 and the curved portion 136 and between the fixed portion 134 and the curved portion 136, and arc discharge does not occur. In the present embodiment, 'clamping The portion 132, the fixing portion, and the curved portion 136 may include substantially the same conductive material. Examples of the conductive material may include beryllium (Be), copper (Cupper, Cu), alloys thereof, etc. FIG. 5 to FIG. A perspective view of a connecting member according to other embodiments of the present invention. 15 1360834 26724pif.doc The connecting member 130 in FIGS. 5 to 7 includes elements that are different from the connecting portion 130 in FIG. 3 except for the bent portion. The same reference numerals are used for the same elements, and further descriptions for the same elements are omitted for the sake of brevity. Referring to Figure 5, the curved portion 136 will be the two plates n2a and 132b in the clamping portion 132. The lower end is connected to the lower end of the fixing portion 134. Referring to Fig. 6, the curved portion 136 connects any one of the front ends of the two plates 132a and 132b in the holding portion 132 to the front end of the fixing portion 134. Referring to Fig. 7, the bending portion 136 connects any one of the second plates 132 & 132b and 132b in the clamping portion 132 to the middle end of the fixing portion 134. Referring again to Figures 3 and 4, the insulating member 14 is interposed between the grounding seat 11 and the connecting member 130. The clamping portion 132 is electrically insulated from the clamping portion 132. The insulating member 14 includes a first insulator 142 and a second insulator 144. The flange body 142 is disposed on the grounding seat π〇 The side surface and the clamping portion 132 are located on the side of the valley space 112. The second insulator 144 is disposed between the bottom surface of the grounding seat 110 and the clamping portion 132, that is, on the bottom surface of the receiving space 112. 150 covers the accommodating space 112. The cover 150 prevents The ground terminal 120 and the connecting member 130 are exposed to the outside. In the embodiment, the cover 15 〇 may include an insulating material. Therefore, between the ground terminal 12 〇 and the cover 15 以及 and between the connecting member 130 and the cover 150 According to the present embodiment, the first screw 138 fixes the clamping portion 132 such that the clamping portion 132 closely contacts the ground terminal 12A. Thus, at the ground terminal 16 1360834 26724pif.doc = 〇S connection member 13〇 No arcing will occur between them. The advancement 134 and the curved portion 136 are integrally formed, and arcing due to poor contact between the sandwiching portion 132_(4) 136(4) and the solid material: 13: does not occur. . In the presence of the bent portion 136, the nip portion is easily moved in the vertical direction so that the thermal expansion of the ground terminal is not restricted. Therefore, the ground terminal 12A is not cut.
此外夹持部132與彎.曲部136以及固定部134盘彎 曲部丄36之間的連接部可以是圓形的。因此,儘管高頻功 率可能集巾於連接部±,也不會對彎曲部136進行切割。 加熱器 口 圖8疋根據本發明之—實施例的加熱器的截面圖。 參照圖8,本實施例的加熱器200包括加熱塊210、加 熱元件220、電極230以及接地結構1〇〇。Further, the connecting portion between the grip portion 132 and the curved portion 136 and the fixed portion 134 disc curved portion 36 may be circular. Therefore, although the high frequency power may collect the towel at the joint portion ±, the bent portion 136 is not cut. Heater Port Figure 8 is a cross-sectional view of a heater in accordance with an embodiment of the present invention. Referring to Fig. 8, the heater 200 of the present embodiment includes a heating block 210, a heating element 220, an electrode 230, and a ground structure 1A.
加熱塊210包括放置半導體基板的圓板以及連接圓板 的下中心部的垂直軸。在本實施例中,加熱塊21〇可包括 陶瓷。陶瓷的實例可包括Α12〇3、γ2〇3、Αΐ2〇3/γ2〇3、ZrQ2、 A1C、ΤιΝ、AIN、TiC、Mg〇、CaO、Ce02、Ti02、BxCy、 BN、Si〇2、SiC、YAG、富鋁紅柱石(Mullite)、A1F3 等。 這些材質可單獨或者組合使用。 加熱元件220内建於加熱塊210内。在本實施例中, 加熱元件220以同心圓圖案配置於加熱塊21〇的圓板内。 加熱塊220產生熱量以加熱半導體基板。加熱塊220可包 括金屬。金屬的實例可包括鎢(W)、鉬(Mo)、鈕(Ta)、鈦(Ti)、 17 1360834 _ 26724pif.doc 上述金屬的合金、鐵鉻(Fe-Cr)合金、鎳鉻⑽心)人 電一建於加熱塊卿接 高頻功率源(power supply)。因此,電極23〇可感應電漿以 .· 4理半導體基板。或者,電極23G可键到直流(ic)動力 • 源。因此,電極23〇可產生保持半導體基板的靜電力。 接地結構100包括接地座、接地端子、連接構件以及 蓋體。此時,接地結構1〇〇與圖3至圖7中的接地結構實 # 貝上相同。因此,為了簡潔起見省略了關於接地結構的進 一步說明。 接地結構100的接地座安裝於加熱塊21 〇之垂直軸的 - 下端。接地結構10〇的接地端子電性連接電極230。 基板處理奘詈 圖9是根據本發明之一實施例的基板處理裝置的截面 圖。 參照圖9,本實施例的裝置3〇〇包括腔室 (chamber)310、氣體提供構件 320、喷頭(sh〇werhead)33〇、 上電極340以及加熱器2〇〇。 腔室310具有裝載並處理半導體基板的空間。 氣體提供構件320連接於腔室310的上面。氣體提供 構件320將處理半導體基板的反應氣體提供到腔室31〇内。 喷頭330配置於腔室310的上空間内。噴頭330向半 導體基板均勻地供應反應氣體。 • 上電極340連接噴頭330。上電極340向反應氣體施 加高壓以將反應氣體轉換成電漿。 18 1360834 26724pif.doc 加熱盗200包括加熱塊、加熱元件、下電極 =構。此時,加熱器200與圖8中的加熱器 口此,為^潔起見省略了關於加熱器·的進:步=。 加熱斋200配置於腔室3〗〇 v 置於加熱H 的加純上。 切體基板放The heating block 210 includes a circular plate on which the semiconductor substrate is placed and a vertical axis connecting the lower central portion of the circular plate. In the present embodiment, the heating block 21A may include ceramic. Examples of the ceramic may include Α12〇3, γ2〇3, Αΐ2〇3/γ2〇3, ZrQ2, A1C, ΤιΝ, AIN, TiC, Mg〇, CaO, Ce02, Ti02, BxCy, BN, Si〇2, SiC, YAG, mullite, A1F3, etc. These materials can be used individually or in combination. The heating element 220 is built into the heating block 210. In the present embodiment, the heating elements 220 are disposed in a concentric pattern in the circular plate of the heating block 21A. The heating block 220 generates heat to heat the semiconductor substrate. The heating block 220 can comprise a metal. Examples of the metal may include tungsten (W), molybdenum (Mo), button (Ta), titanium (Ti), 17 1360834 _ 26724pif.doc alloy of the above metals, iron chromium (Fe-Cr) alloy, nickel chromium (10) core) The human power is built on the heating block to connect to the high frequency power supply. Therefore, the electrode 23 can sense the plasma to treat the semiconductor substrate. Alternatively, electrode 23G can be keyed to a direct current (ic) power source. Therefore, the electrode 23A can generate an electrostatic force that holds the semiconductor substrate. The ground structure 100 includes a grounding seat, a grounding terminal, a connecting member, and a cover. At this time, the ground structure 1 is the same as the ground structure in FIG. 3 to FIG. Therefore, a further explanation about the ground structure is omitted for the sake of brevity. The grounding seat of the grounding structure 100 is mounted on the lower end of the vertical axis of the heating block 21〇. The ground terminal of the grounding structure 10 is electrically connected to the electrode 230. Substrate Processing Fig. 9 is a cross-sectional view of a substrate processing apparatus in accordance with an embodiment of the present invention. Referring to Fig. 9, the apparatus 3 of the present embodiment includes a chamber 310, a gas supply member 320, a head squeezing head 33, an upper electrode 340, and a heater 2''. The chamber 310 has a space for loading and processing a semiconductor substrate. The gas supply member 320 is coupled to the upper surface of the chamber 310. The gas supply member 320 supplies the reaction gas for processing the semiconductor substrate into the chamber 31. The showerhead 330 is disposed in the upper space of the chamber 310. The head 330 uniformly supplies the reaction gas to the semiconductor substrate. • The upper electrode 340 is connected to the shower head 330. The upper electrode 340 applies a high pressure to the reaction gas to convert the reaction gas into a plasma. 18 1360834 26724pif.doc Heater 200 includes a heating block, a heating element, and a lower electrode. At this time, the heater 200 and the heater port of Fig. 8 omits the step of the heater for the cleaning. The heating 200 is placed in the chamber 3 〇 v placed on the pure addition of the heating H. Cut substrate
鲁 八,°」问頭叨平位準施加到電榀卜门 率產生變化。當不低於3,〇_的‘功,時 敕二:到電極上’同時脊曲部之厚度為〇.5mm時,、彎 到it進一步,當不低於2,5_的高頻功率位 一脹時彎曲部不會彎曲,使得接心;曲在,子 坶。§不低於 19 1360834 26724pif.doc 1,500W的高頻功率位準施加到電極上,同時彎曲部之厚度 為4.0mm時,彎曲部與接地端子被損壞。 結果’可以注意到彎曲部的厚度處於大約iiM至大 約3mm之間是有利的。具有上述厚度的彎曲部不合由於 高頻功率而㈣。進-步,彎曲部可輕易地f曲使得接地 端子不會損壞。 根據圓形連接部的半經評任連接槿养 表2 連接部的半徑 高頻功率(w) (mm) 200 500 1,000 1,500 2,000 2,500 3 000 0 通過 通過 通過 失敗 0.5 通過 通過 通過 通過 --- 通過 通過 通過 1.0 通過 通過 通過 通過 通過 通過 通過 1.5 通過 通過 通過 通過 通過 通過 通過 2.0 通過 通過 通過 通過 通過 通過 2.5 通過 通過 通過 通過 一過 通過 通過 3.0 通過 通過 通過 通過 通過 通過 3.5 通過 通過 通過 通過 通過 通過 矣目分 4.0 通過 通過 通過 通過 通過 通過 失敗 如表 2 所示,200W、500W、1,〇〇〇W、1,500w、2,〇〇^ 2,500W以及3,000W的高頻功率位準施加到電極上,同時 圓形連接部之半徑產生變化。此時,彎曲部的厚度為 至2.5mm。當不低於1,500W的高頻功率位準施加於連接 部之半控為Omm的連接部上時’即’连接部不是圓开〉時 20 26724pif.doc 高頻功率集中於連接部上, ⑽⑽的高頻功率位準施^曲當不低於 約:::意:^:,約〜大 ,率而損壞彎曲部。進—步,防士由於高 得接地端子不會損壞。 °車二易地彎曲,使 根據本發明,不會在將接 構件上發生電弧放電,使 接地座的連接 二:構、加熱器以及包括此連接 ^ $ 相壞,而具有較長的壽命。 心里裝置不會 據上本 =;喻編例,但值得注意的是根 要理㈣L本域技貝可以進行修#和變化。因此, 所附由1宙、發明的特定實施例進行變化,此變化落在由 寸申h專利朗所限定的本發明之範圍和内。 【圖式簡單說明】 曰藉由參知、後續詳細描述同時結合附圖進行考慮,本發 月的上述以及其他特徵以及優點將變得更加清楚,其中: 圖1是習知接地結構的透視圖。 512是圖1中的接地結構的夾具與導電片的透視圖。 圖3是根據本發明之一實施例的接地結構的透視圖。 圖4是圖3中的接地結構的連接構件的透視圖。 815至'圖7是根據本發明的其他實施例的連接構件的 1360834 26724pif.doc 透視圖。 圖8是根據本發明之一實施例的加熱器的截面圖。 圖9是根據本發明之一實施例的處理基板的裝置的截 面圖。 【主要元件符號說明】 1:接地結構 10 :接地底座 20 :接地端子 30 :夾具 40 :導電片 50 :螺絲 100 :接地結構 110 :接地座 112 :容置空間 114 :第一孔 120 :接地端子 130 :連接構件 132 :夾持部 132a :垂直板 132b :垂直板 132c :曲板 132d :容置孔 132e :第一螺絲孔 134 :固定部 134a :第二螺絲孔 22 1360834 26724pif.docLu Ba, °" asks the head level to apply to the electric 榀 门 率 rate changes. When not less than 3, ' _ 'work, time 敕 2: to the electrode 'while the thickness of the ridge is 〇. 5mm, bend to it further, when not less than 2,5 _ high frequency power When the position is inflated, the curved portion will not bend, so that the heart is connected; § Not less than 19 1360834 26724pif.doc A high-frequency power level of 1,500 W is applied to the electrode, and when the thickness of the bent portion is 4.0 mm, the bent portion and the ground terminal are damaged. As a result, it can be noted that it is advantageous that the thickness of the bent portion is between about iiM and about 3 mm. The bent portion having the above thickness does not conform to the high frequency power (4). In the advance step, the bent portion can be easily bent so that the ground terminal is not damaged. According to the circular connection of the semi-finished connection, the radius of the connection is high frequency power (w) (mm) 200 500 1,000 1,500 2,000 2,500 3 000 0 by passing the failure of 0.5 by passing through --- Passing through 1.0 through through through through through through 1.5 through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through through Sub-4.0 is applied to the electrode by pass-through failure as shown in Table 2, 200W, 500W, 1, 〇〇〇W, 1,500w, 2, 〇〇^ 2,500W, and 3,000W of high-frequency power level At the same time, the radius of the circular connection changes. At this time, the thickness of the bent portion was 2.5 mm. When a high-frequency power level of not less than 1,500 W is applied to the connection portion of the connection portion that is half-controlled to Omm, that is, when the connection portion is not rounded, 20 26724pif.doc high-frequency power is concentrated on the connection portion, (10) The high-frequency power level of (10) is not less than about :::: meaning: ^:, about ~ large, rate and damage the bend. In the step-by-step, the defender will not be damaged due to the high grounding terminal. The car 2 is easily bent so that, according to the present invention, arcing does not occur on the connecting member, so that the connection of the grounding seat, the heater, and the connection including the ^ ^ are bad, and have a long life. The device in mind will not be based on this =; the example is written, but it is worth noting that the root of the theory (4) L domain technology can be repaired # and change. Therefore, the appended claims are subject to change in the specific embodiments of the invention, which are within the scope and scope of the invention as defined by the invention. BRIEF DESCRIPTION OF THE DRAWINGS [0009] The above and other features and advantages of the present invention will become more apparent from the detailed description and the appended claims. . 512 is a perspective view of the clamp and conductive sheet of the ground structure of FIG. 3 is a perspective view of a ground structure in accordance with an embodiment of the present invention. Figure 4 is a perspective view of the connecting member of the grounding structure of Figure 3. 815 to 'FIG. 7 are perspective views of a 1360834 26724 pif.doc of a connecting member in accordance with other embodiments of the present invention. Figure 8 is a cross-sectional view of a heater in accordance with an embodiment of the present invention. Figure 9 is a cross-sectional view of an apparatus for processing a substrate in accordance with an embodiment of the present invention. [Main component symbol description] 1: Grounding structure 10: Grounding base 20: Grounding terminal 30: Fixture 40: Conductive sheet 50: Screw 100: Grounding structure 110: Grounding seat 112: accommodating space 114: First hole 120: Grounding terminal 130: connecting member 132: clamping portion 132a: vertical plate 132b: vertical plate 132c: curved plate 132d: receiving hole 132e: first screw hole 134: fixing portion 134a: second screw hole 22 1360834 26724pif.doc
136 彎曲部 136a :第三孔 138 第一螺絲 139 第二螺絲 140 絕緣構件 142 第一絕緣體 144 第二絕緣體 150 蓋體 200 加熱器 210 加熱塊 220 加熱元件 230 電極 300 基板處理裝置 310 腔室 320 氣體提供構件 330 噴頭 340 上電極136 Bending portion 136a: third hole 138 first screw 139 second screw 140 insulating member 142 first insulator 144 second insulator 150 cover 200 heater 210 heating block 220 heating element 230 electrode 300 substrate processing device 310 chamber 320 gas Providing member 330 nozzle 340 upper electrode
Claims (1)
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KR1020070107927A KR100933432B1 (en) | 2007-10-25 | 2007-10-25 | Connection member, grounding structure having same, heater and substrate processing apparatus |
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TW200919539A TW200919539A (en) | 2009-05-01 |
TWI360834B true TWI360834B (en) | 2012-03-21 |
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KR (1) | KR100933432B1 (en) |
CN (1) | CN201171088Y (en) |
SG (1) | SG152109A1 (en) |
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KR101415552B1 (en) * | 2009-12-21 | 2014-07-07 | 주식회사 미코 | Ground structure, and heater and chemical vapor deposition apparatus including the same |
KR101208700B1 (en) | 2012-06-25 | 2012-12-06 | (주)보부하이테크 | Ceramic heater having strap for ground |
KR101950439B1 (en) * | 2012-12-28 | 2019-02-21 | 주식회사 원익아이피에스 | apparatus for susceptor and processing substrate |
CN103700965B (en) * | 2013-12-24 | 2016-08-17 | 华为技术有限公司 | Ground terminal, ground structure and electronic equipment |
WO2018062710A1 (en) * | 2016-09-28 | 2018-04-05 | 주식회사 미코 | Ground clamping unit and substrate support assembly comprising same |
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JP3364471B2 (en) | 2000-06-07 | 2003-01-08 | 北川工業株式会社 | Clamp |
KR100358491B1 (en) | 2000-07-29 | 2002-10-30 | 메카텍스 (주) | The grounding structure for dry etching apparatus |
KR200420693Y1 (en) | 2005-11-23 | 2006-07-06 | 세레테크 세미콘덕터, 인코포레이티드 | Radio frequency grounding apparatus |
KR100963481B1 (en) * | 2006-11-23 | 2010-06-17 | 주식회사 코미코 | Ground structure, and heater and chemical vapor deposition apparatus including the same |
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KR100933432B1 (en) | 2009-12-23 |
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