TWI350564B - Polising slurry for chemical mechanical polishing (cmp) and polishing method - Google Patents

Polising slurry for chemical mechanical polishing (cmp) and polishing method

Info

Publication number
TWI350564B
TWI350564B TW096114417A TW96114417A TWI350564B TW I350564 B TWI350564 B TW I350564B TW 096114417 A TW096114417 A TW 096114417A TW 96114417 A TW96114417 A TW 96114417A TW I350564 B TWI350564 B TW I350564B
Authority
TW
Taiwan
Prior art keywords
polising
cmp
slurry
polishing
chemical mechanical
Prior art date
Application number
TW096114417A
Other languages
English (en)
Other versions
TW200802580A (en
Inventor
Takashi Shinoda
Shigeru Nobe
Takaaki Tanaka
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW200802580A publication Critical patent/TW200802580A/zh
Application granted granted Critical
Publication of TWI350564B publication Critical patent/TWI350564B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW096114417A 2006-04-24 2007-04-24 Polising slurry for chemical mechanical polishing (cmp) and polishing method TWI350564B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006119086 2006-04-24

Publications (2)

Publication Number Publication Date
TW200802580A TW200802580A (en) 2008-01-01
TWI350564B true TWI350564B (en) 2011-10-11

Family

ID=38625132

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096114417A TWI350564B (en) 2006-04-24 2007-04-24 Polising slurry for chemical mechanical polishing (cmp) and polishing method

Country Status (7)

Country Link
US (1) US20090094901A1 (zh)
EP (1) EP2020680A4 (zh)
JP (1) JPWO2007123235A1 (zh)
KR (1) KR20080108574A (zh)
CN (1) CN101432854B (zh)
TW (1) TWI350564B (zh)
WO (1) WO2007123235A1 (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5240202B2 (ja) * 2007-10-23 2013-07-17 日立化成株式会社 Ｃｍｐ研磨液及びこれを用いた基板の研磨方法
CN102007577B (zh) * 2008-04-16 2012-08-29 日立化成工业株式会社 Cmp用研磨液以及研磨方法
CN102232242B (zh) 2008-12-11 2014-07-09 日立化成株式会社 Cmp用研磨液以及使用该研磨液的研磨方法
KR20110104066A (ko) * 2008-12-20 2011-09-21 캐보트 마이크로일렉트로닉스 코포레이션 와이어 쏘잉 동안 건조 상태를 개선시키는 조성물
JP5251861B2 (ja) * 2009-12-28 2013-07-31 信越化学工業株式会社 合成石英ガラス基板の製造方法
JP5648567B2 (ja) * 2010-05-07 2015-01-07 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
US8568610B2 (en) * 2010-09-20 2013-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
KR101289742B1 (ko) * 2010-12-21 2013-07-26 안경철 Ｂｍ인쇄된 유리기판의 ｂｍ인쇄표면의 연마방법 및 이를 이용하여 제조된 ｂｍ인쇄된 유리기판
TWI568541B (zh) * 2010-12-22 2017-02-01 Jsr Corp Chemical mechanical grinding method
US9564337B2 (en) * 2010-12-24 2017-02-07 Hitachi Chemical Co., Ltd. Polishing liquid and method for polishing substrate using the polishing liquid
CN106574170A (zh) * 2014-08-07 2017-04-19 福吉米株式会社 钛合金材料研磨用组合物
KR102468320B1 (ko) * 2015-08-04 2022-11-18 동우 화인켐 주식회사 금속막 식각액 조성물
US10286518B2 (en) 2017-01-31 2019-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US10181408B2 (en) * 2017-01-31 2019-01-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten using polyglycols and polyglycol derivatives
US9984895B1 (en) * 2017-01-31 2018-05-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US20190153262A1 (en) * 2017-11-20 2019-05-23 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced surface scratching

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
JP2001049184A (ja) 1999-06-01 2001-02-20 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP4759779B2 (ja) * 1999-09-09 2011-08-31 日立化成工業株式会社 基板の研磨方法
US6656842B2 (en) * 1999-09-22 2003-12-02 Applied Materials, Inc. Barrier layer buffing after Cu CMP
WO2001027350A1 (en) * 1999-10-08 2001-04-19 Speedfam-Ipec Corporation Optimal offset, pad size and pad shape for cmp buffing and polishing
JP4500429B2 (ja) * 1999-12-24 2010-07-14 株式会社トクヤマ バリア膜用研磨剤
DE60141534D1 (de) * 2000-11-18 2010-04-22 Globalfoundries Inc Leiter-chemisch-mechanisches polieren in integrierten schaltungsverbindungselementen
CN1746255B (zh) * 2001-02-20 2010-11-10 日立化成工业株式会社 抛光剂及基片的抛光方法
TWI314950B (en) * 2001-10-31 2009-09-21 Hitachi Chemical Co Ltd Polishing slurry and polishing method
KR100720985B1 (ko) * 2002-04-30 2007-05-22 히다치 가세고교 가부시끼가이샤 연마액 및 연마방법
JP2004179294A (ja) * 2002-11-26 2004-06-24 Hitachi Chem Co Ltd 研磨液及び研磨方法
JP4618987B2 (ja) * 2003-05-26 2011-01-26 日立化成工業株式会社 研磨液及び研磨方法
JP2005079119A (ja) * 2003-08-29 2005-03-24 Toshiba Corp 銅系金属用研磨組成物および半導体装置の製造方法
JP2005285944A (ja) * 2004-03-29 2005-10-13 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
US7086935B2 (en) * 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto

Also Published As

Publication number Publication date
WO2007123235A1 (ja) 2007-11-01
US20090094901A1 (en) 2009-04-16
KR20080108574A (ko) 2008-12-15
EP2020680A4 (en) 2011-09-21
EP2020680A1 (en) 2009-02-04
TW200802580A (en) 2008-01-01
JPWO2007123235A1 (ja) 2009-09-10
CN101432854A (zh) 2009-05-13
CN101432854B (zh) 2011-04-06

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees