TWI349307B - Method of forming a cap layer having anti-reflective characteristics on top of a low-k dielectric - Google Patents

Method of forming a cap layer having anti-reflective characteristics on top of a low-k dielectric

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Publication number
TWI349307B
TWI349307B TW092133968A TW92133968A TWI349307B TW I349307 B TWI349307 B TW I349307B TW 092133968 A TW092133968 A TW 092133968A TW 92133968 A TW92133968 A TW 92133968A TW I349307 B TWI349307 B TW I349307B
Authority
TW
Taiwan
Prior art keywords
dielectric
forming
low
cap layer
reflective characteristics
Prior art date
Application number
TW092133968A
Other languages
English (en)
Other versions
TW200416881A (en
Inventor
Hartmut Ruelke
Joerg Hohage
Thomas Werner
Frank Mauersberger
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of TW200416881A publication Critical patent/TW200416881A/zh
Application granted granted Critical
Publication of TWI349307B publication Critical patent/TWI349307B/zh

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • H01L21/0274—Photolithographic processes
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    • H01L21/314—Inorganic layers
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    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
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    • H01L21/7684—Smoothing; Planarisation
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    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
TW092133968A 2002-12-23 2003-12-03 Method of forming a cap layer having anti-reflective characteristics on top of a low-k dielectric TWI349307B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10260619A DE10260619B4 (de) 2002-12-23 2002-12-23 Verfahren zur Herstellung einer Deckschicht mit antireflektierenden Eigenschaften auf einem Dielektrikum mit kleinem ε
US10/463,910 US7030044B2 (en) 2002-12-23 2003-06-16 Method of forming a cap layer having anti-reflective characteristics on top of a low-k dielectric

Publications (2)

Publication Number Publication Date
TW200416881A TW200416881A (en) 2004-09-01
TWI349307B true TWI349307B (en) 2011-09-21

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TW092133968A TWI349307B (en) 2002-12-23 2003-12-03 Method of forming a cap layer having anti-reflective characteristics on top of a low-k dielectric

Country Status (4)

Country Link
US (1) US7030044B2 (zh)
CN (1) CN100437971C (zh)
DE (1) DE10260619B4 (zh)
TW (1) TWI349307B (zh)

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DE102006046364A1 (de) * 2006-09-29 2008-04-03 Advanced Micro Devices, Inc., Sunnyvale ARC-Schicht mit geringerer Neigung zum Ablösen und Verfahren zur Herstellung derselben
KR100790452B1 (ko) * 2006-12-28 2008-01-03 주식회사 하이닉스반도체 다마신 공정을 이용한 반도체 소자의 다층 금속배선형성방법
US7704885B2 (en) * 2007-05-24 2010-04-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for fabricating the same
US20080299747A1 (en) * 2007-05-30 2008-12-04 Asm Japan K.K. Method for forming amorphouse silicon film by plasma cvd
US8618663B2 (en) 2007-09-20 2013-12-31 International Business Machines Corporation Patternable dielectric film structure with improved lithography and method of fabricating same
US8084862B2 (en) * 2007-09-20 2011-12-27 International Business Machines Corporation Interconnect structures with patternable low-k dielectrics and method of fabricating same
US7709370B2 (en) * 2007-09-20 2010-05-04 International Business Machines Corporation Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures
US8048813B2 (en) * 2008-12-01 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method of reducing delamination in the fabrication of small-pitch devices
JP2010171064A (ja) * 2009-01-20 2010-08-05 Panasonic Corp 半導体装置及びその製造方法
US8575019B2 (en) * 2010-09-30 2013-11-05 Institute of Microelectronics, Chinese Academy of Sciences Metal interconnection structure and method for forming metal interlayer via and metal interconnection line
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US7030044B2 (en) 2006-04-18
CN100437971C (zh) 2008-11-26
TW200416881A (en) 2004-09-01
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US20040121621A1 (en) 2004-06-24
DE10260619B4 (de) 2011-02-24

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