TWI349165B - Resist composition and patterning process - Google Patents

Resist composition and patterning process

Info

Publication number
TWI349165B
TWI349165B TW095141350A TW95141350A TWI349165B TW I349165 B TWI349165 B TW I349165B TW 095141350 A TW095141350 A TW 095141350A TW 95141350 A TW95141350 A TW 95141350A TW I349165 B TWI349165 B TW I349165B
Authority
TW
Taiwan
Prior art keywords
resist composition
patterning process
patterning
resist
composition
Prior art date
Application number
TW095141350A
Other languages
English (en)
Other versions
TW200734821A (en
Inventor
Takanobu Takeda
Osamu Watanabe
Daisuke Manba
Tsugio Kaneda
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of TW200734821A publication Critical patent/TW200734821A/zh
Application granted granted Critical
Publication of TWI349165B publication Critical patent/TWI349165B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW095141350A 2005-11-08 2006-11-08 Resist composition and patterning process TWI349165B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005323523A JP4582331B2 (ja) 2005-11-08 2005-11-08 レジスト材料及びパターン形成方法

Publications (2)

Publication Number Publication Date
TW200734821A TW200734821A (en) 2007-09-16
TWI349165B true TWI349165B (en) 2011-09-21

Family

ID=37685596

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095141350A TWI349165B (en) 2005-11-08 2006-11-08 Resist composition and patterning process

Country Status (6)

Country Link
US (1) US7618763B2 (zh)
EP (1) EP1783551B1 (zh)
JP (1) JP4582331B2 (zh)
KR (1) KR101029686B1 (zh)
DE (1) DE602006013572D1 (zh)
TW (1) TWI349165B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200804263A (en) * 2006-06-23 2008-01-16 Kyowa Hakko Chemical Co Ltd Protectant
EP2034364A4 (en) * 2006-06-27 2010-12-01 Jsr Corp METHOD FOR FORMING A STRUCTURE AND COMPOSITION FOR FORMING AN ORGANIC THIN FILM FOR USE THEREOF
JP5039622B2 (ja) * 2007-03-30 2012-10-03 富士フイルム株式会社 ポジ型レジスト組成物及びこれを用いたパターン形成方法
WO2009081852A1 (ja) * 2007-12-20 2009-07-02 Kyowa Hakko Chemical Co., Ltd. 保護剤
JP5158370B2 (ja) 2008-02-14 2013-03-06 信越化学工業株式会社 ダブルパターン形成方法
JP5177432B2 (ja) * 2008-02-21 2013-04-03 信越化学工業株式会社 パターン形成方法
JP5385017B2 (ja) * 2008-07-11 2014-01-08 信越化学工業株式会社 レジストパターン形成方法及びフォトマスクの製造方法
JP4575479B2 (ja) 2008-07-11 2010-11-04 信越化学工業株式会社 化学増幅型ポジ型レジスト組成物及びパターン形成方法
JP5177434B2 (ja) 2009-04-08 2013-04-03 信越化学工業株式会社 パターン形成方法
JP5806854B2 (ja) * 2011-05-12 2015-11-10 富士フイルム株式会社 ポジ型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法及びエッチング処理を行う方法、並びに、高分子化合物
JP5589019B2 (ja) * 2011-06-14 2014-09-10 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、これを用いた感活性光線性又は感放射線性膜、及び、パターン形成方法
JP5298222B2 (ja) * 2011-07-28 2013-09-25 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、これを用いた感活性光線性又は感放射線性膜、及び、パターン形成方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4603101A (en) 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
DE3750275T3 (de) 1986-06-13 1998-10-01 Microsi Inc Lackzusammensetzung und -anwendung.
US5310619A (en) 1986-06-13 1994-05-10 Microsi, Inc. Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable
JPH03223858A (ja) 1990-01-30 1991-10-02 Matsushita Electric Ind Co Ltd パターン形成方法
US5252435A (en) 1990-01-30 1993-10-12 Matsushita Electric Industrial Co., Ltd. Method for forming pattern
EP0440374B1 (en) 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemical amplified resist material
JP2970879B2 (ja) 1990-01-30 1999-11-02 和光純薬工業株式会社 化学増幅型レジスト材料
JPH03275149A (ja) 1990-03-27 1991-12-05 Tosoh Corp 不飽和ジエステル製造用触媒の再生方法
JPH05134413A (ja) * 1991-02-15 1993-05-28 Kawasaki Steel Corp 感光性樹脂
TW304235B (zh) 1992-04-29 1997-05-01 Ocg Microelectronic Materials
JP3287057B2 (ja) 1993-03-30 2002-05-27 日本ゼオン株式会社 レジスト組成物
ATE244904T1 (de) 1995-12-21 2003-07-15 Wako Pure Chem Ind Ltd Polymerzusammensetzung und rezistmaterial
JP2002020610A (ja) 2000-07-13 2002-01-23 Idemitsu Petrochem Co Ltd ポリカーボネート樹脂組成物
EP1204001B1 (en) * 2000-11-01 2013-09-11 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
JP3865048B2 (ja) * 2000-11-01 2007-01-10 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP3877605B2 (ja) * 2002-02-08 2007-02-07 信越化学工業株式会社 ネガ型レジスト材料及びこれを用いたパターン形成方法
JP3991213B2 (ja) * 2002-08-09 2007-10-17 信越化学工業株式会社 新規スルホニルジアゾメタン化合物、光酸発生剤、並びにそれを用いたレジスト材料及びパターン形成方法
JP3991223B2 (ja) * 2003-02-13 2007-10-17 信越化学工業株式会社 新規スルホニルジアゾメタン化合物、光酸発生剤、並びにそれを用いたレジスト材料及びパターン形成方法
JP3981830B2 (ja) * 2003-05-26 2007-09-26 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4359467B2 (ja) * 2003-08-28 2009-11-04 信越化学工業株式会社 新規スルホニルジアゾメタン化合物、光酸発生剤、並びにそれを用いたレジスト材料及びパターン形成方法。

Also Published As

Publication number Publication date
US7618763B2 (en) 2009-11-17
EP1783551A3 (en) 2007-05-30
JP2007132998A (ja) 2007-05-31
US20070105042A1 (en) 2007-05-10
KR101029686B1 (ko) 2011-04-15
EP1783551B1 (en) 2010-04-14
TW200734821A (en) 2007-09-16
DE602006013572D1 (de) 2010-05-27
EP1783551A2 (en) 2007-05-09
KR20070049576A (ko) 2007-05-11
JP4582331B2 (ja) 2010-11-17

Similar Documents

Publication Publication Date Title
TWI346252B (en) Resist composition and patterning process using the same
TWI341441B (en) Positive resist composition and patterning process
TWI349165B (en) Resist composition and patterning process
EP1739485A4 (en) RESISTANT COMPOSITION
TWI317853B (en) Chemically amplified positive resist composition and patterning process
TWI349833B (en) Resist protective coating material and patterning process
TWI371455B (en) Polymer, resist composition and patterning process
TWI350833B (en) Novel ester compound, polymer, resist composition, and patterning process
TWI366743B (en) Positive resist composition and patterning process
SG131860A1 (en) Inorganic composition
TWI318724B (en) Method for forming positive resist composition, positive resist composition, and method for forming resist pattern
EP1912921A4 (en) COMPOUNDS ON TETRAAZAPORPHYRINBASE AND ITS USES
TWI349832B (en) Negative resist composition and patterning process
TWI319121B (en) Positive resist composition and method for forming resist pattern
EP1882981A4 (en) POSITIVE RESISTANCE COMPOSITION AND RESISTANCE GENERATION PROCESS
IL185223A0 (en) Compounds and uses thereof
TWI347492B (en) Compositions and processes for photolithography
TWI350945B (en) Positive resist composition and resist pattern formation method
TWI349835B (en) Resist composition and patterning process using the same
TWI319120B (en) Positive resist composition and method for forming resist pattern using the same
EP1947510A4 (en) POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
TWI315450B (en) Positive resist composition and method for forming resist pattern
IL165618A0 (en) Complementary masks
GB0523637D0 (en) Process and compounds
GB0420700D0 (en) Novel resist material