TWI348193B - Annealed wafer and manufacturing method of annealed wafer - Google Patents

Annealed wafer and manufacturing method of annealed wafer

Info

Publication number
TWI348193B
TWI348193B TW095148821A TW95148821A TWI348193B TW I348193 B TWI348193 B TW I348193B TW 095148821 A TW095148821 A TW 095148821A TW 95148821 A TW95148821 A TW 95148821A TW I348193 B TWI348193 B TW I348193B
Authority
TW
Taiwan
Prior art keywords
annealed wafer
manufacturing
annealed
wafer
Prior art date
Application number
TW095148821A
Other languages
English (en)
Other versions
TW200725742A (en
Inventor
Katsuhiko Nakai
Koji Fukuhara
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of TW200725742A publication Critical patent/TW200725742A/zh
Application granted granted Critical
Publication of TWI348193B publication Critical patent/TWI348193B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW095148821A 2005-12-27 2006-12-25 Annealed wafer and manufacturing method of annealed wafer TWI348193B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005376306A JP5121139B2 (ja) 2005-12-27 2005-12-27 アニールウエハの製造方法

Publications (2)

Publication Number Publication Date
TW200725742A TW200725742A (en) 2007-07-01
TWI348193B true TWI348193B (en) 2011-09-01

Family

ID=37669604

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095148821A TWI348193B (en) 2005-12-27 2006-12-25 Annealed wafer and manufacturing method of annealed wafer

Country Status (7)

Country Link
US (1) US8545622B2 (zh)
EP (1) EP1804283B1 (zh)
JP (1) JP5121139B2 (zh)
KR (1) KR100854673B1 (zh)
CN (1) CN101016651B (zh)
SG (1) SG133504A1 (zh)
TW (1) TWI348193B (zh)

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JP5121139B2 (ja) * 2005-12-27 2013-01-16 ジルトロニック アクチエンゲゼルシャフト アニールウエハの製造方法
JP4805681B2 (ja) * 2006-01-12 2011-11-02 ジルトロニック アクチエンゲゼルシャフト エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法
FR2928775B1 (fr) 2008-03-11 2011-12-09 Soitec Silicon On Insulator Procede de fabrication d'un substrat de type semiconducteur sur isolant
DE102008046617B4 (de) 2008-09-10 2016-02-04 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren für deren Herstellung
JP2010147248A (ja) * 2008-12-18 2010-07-01 Siltronic Ag アニールウェハおよびアニールウェハの製造方法
EP2309038B1 (en) * 2009-10-08 2013-01-02 Siltronic AG production method of an epitaxial wafer
ATE545719T1 (de) 2009-12-29 2012-03-15 Siltronic Ag Siliciumwafer und herstellungsverfahren dafür
JP2012142455A (ja) 2010-12-29 2012-07-26 Siltronic Ag アニールウエハの製造方法
JP2013129564A (ja) 2011-12-21 2013-07-04 Siltronic Ag シリコン単結晶基板およびその製造方法
KR20150081741A (ko) * 2014-01-06 2015-07-15 주식회사 엘지실트론 에피텍셜 웨이퍼 및 에피텍셜용 웨이퍼 제조 방법
CN105603534A (zh) * 2016-02-26 2016-05-25 吕远芳 一种锗晶体应力消除方法
US10855042B2 (en) 2016-08-11 2020-12-01 D.M. Benatav Ltd. Multiple diameter wire connection
JP7429383B2 (ja) 2020-02-03 2024-02-08 日本発條株式会社 フレキシブルフラットケーブルの接続構造および接続方法
CN111430236B (zh) * 2020-05-06 2021-05-14 合肥晶合集成电路股份有限公司 一种晶圆的退火方法

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JPH1179889A (ja) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
EP1035234A4 (en) * 1997-08-26 2003-05-28 Sumitomo Mitsubishi Silicon HIGH QUALITY SINGLE SILICON CRYSTAL AND MANUFACTURING METHOD
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JP4566478B2 (ja) 2001-08-09 2010-10-20 シルトロニック・ジャパン株式会社 シリコン半導体基板およびその製造方法
JP2003243404A (ja) 2002-02-21 2003-08-29 Shin Etsu Handotai Co Ltd アニールウエーハの製造方法及びアニールウエーハ
JP4699675B2 (ja) * 2002-10-08 2011-06-15 信越半導体株式会社 アニールウェーハの製造方法
TWI265217B (en) * 2002-11-14 2006-11-01 Komatsu Denshi Kinzoku Kk Method and device for manufacturing silicon wafer, method for manufacturing silicon single crystal, and device for pulling up silicon single crystal
JP4854917B2 (ja) * 2003-03-18 2012-01-18 信越半導体株式会社 Ｓｏｉウェーハ及びその製造方法
JP4670224B2 (ja) * 2003-04-01 2011-04-13 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
JP5121139B2 (ja) * 2005-12-27 2013-01-16 ジルトロニック アクチエンゲゼルシャフト アニールウエハの製造方法
JP4805681B2 (ja) * 2006-01-12 2011-11-02 ジルトロニック アクチエンゲゼルシャフト エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法

Also Published As

Publication number Publication date
SG133504A1 (en) 2007-07-30
JP2007176732A (ja) 2007-07-12
KR100854673B1 (ko) 2008-08-27
KR20070069040A (ko) 2007-07-02
TW200725742A (en) 2007-07-01
CN101016651B (zh) 2010-06-16
CN101016651A (zh) 2007-08-15
US8545622B2 (en) 2013-10-01
JP5121139B2 (ja) 2013-01-16
US20070155134A1 (en) 2007-07-05
EP1804283B1 (en) 2011-07-06
EP1804283A1 (en) 2007-07-04

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