TWI346402B - Method for the production of a luminesence-diode chip and luminesence-diode chip - Google Patents

Method for the production of a luminesence-diode chip and luminesence-diode chip

Info

Publication number
TWI346402B
TWI346402B TW095131235A TW95131235A TWI346402B TW I346402 B TWI346402 B TW I346402B TW 095131235 A TW095131235 A TW 095131235A TW 95131235 A TW95131235 A TW 95131235A TW I346402 B TWI346402 B TW I346402B
Authority
TW
Taiwan
Prior art keywords
luminesence
diode chip
production
diode
chip
Prior art date
Application number
TW095131235A
Other languages
English (en)
Other versions
TW200713644A (en
Inventor
Ewald Karl Michael Guenther
Herbert Brunner
Helmut Fischer
Dieter Eissler
Alexander Heindl
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200713644A publication Critical patent/TW200713644A/zh
Application granted granted Critical
Publication of TWI346402B publication Critical patent/TWI346402B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
TW095131235A 2005-08-26 2006-08-25 Method for the production of a luminesence-diode chip and luminesence-diode chip TWI346402B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005040558A DE102005040558A1 (de) 2005-08-26 2005-08-26 Verfahren zum Herstellen eines Lumineszenzdiodenchips und Lumineszenzdiodenchip

Publications (2)

Publication Number Publication Date
TW200713644A TW200713644A (en) 2007-04-01
TWI346402B true TWI346402B (en) 2011-08-01

Family

ID=37026957

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095131235A TWI346402B (en) 2005-08-26 2006-08-25 Method for the production of a luminesence-diode chip and luminesence-diode chip

Country Status (8)

Country Link
US (1) US7906352B2 (zh)
EP (1) EP1917686B9 (zh)
JP (1) JP2009506523A (zh)
KR (1) KR101281285B1 (zh)
CN (1) CN101248538B (zh)
DE (1) DE102005040558A1 (zh)
TW (1) TWI346402B (zh)
WO (1) WO2007022741A1 (zh)

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DE102007054037A1 (de) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung, Leuchte und Anzeigevorrichtung
DE102008013898A1 (de) * 2007-12-14 2009-06-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement, Anordnung und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102008054435A1 (de) * 2008-12-09 2010-06-10 Universität Zu Köln Organische Leuchtdiode mit optischem Resonator nebst Herstellungsverfahren
TWI449221B (zh) * 2009-01-16 2014-08-11 Everlight Electronics Co Ltd 發光二極體封裝結構及其製造方法
JP4811520B2 (ja) * 2009-02-20 2011-11-09 住友金属鉱山株式会社 半導体装置用基板の製造方法、半導体装置の製造方法、半導体装置用基板及び半導体装置
EP2422237A4 (en) * 2009-04-21 2012-10-17 Lg Electronics Inc LIGHT EMITTING DEVICE
DE102010006072A1 (de) * 2010-01-28 2011-08-18 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Halbleiterbauteil und Verwendung eines optoelektronischen Halbleiterbauteils in einem Kfz-Schweinwerfer
KR101857772B1 (ko) 2010-03-16 2018-06-28 필립스 라이팅 홀딩 비.브이. 조명 장치
TWI456798B (zh) * 2010-04-23 2014-10-11 Formosa Epitaxy Inc 發光裝置之製造方法
TWI581461B (zh) * 2010-04-23 2017-05-01 Manufacturing method of light emitting device
US9515229B2 (en) 2010-09-21 2016-12-06 Cree, Inc. Semiconductor light emitting devices with optical coatings and methods of making same
DE102011012298A1 (de) 2010-12-28 2012-06-28 Osram Opto Semiconductors Gmbh Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips
KR101837967B1 (ko) 2011-05-30 2018-03-14 삼성전자주식회사 진공 트레이 및 이를 사용한 발광소자 제조방법
KR101795370B1 (ko) 2011-07-28 2017-11-08 삼성전자주식회사 발광디바이스의 제조방법
DE102011115083A1 (de) * 2011-09-19 2013-03-21 Osram Opto Semiconductors Gmbh Konverterplättchen, strahlungsemittierendes Bauelement mit einem derartigen Konverterplättchen und Verfahren zum Herstellen eines derartigen Konverterplättchens
US9147816B2 (en) 2012-08-24 2015-09-29 Luminus Devices, Inc. Wavelength converting material deposition methods and associated articles
JP2014216588A (ja) * 2013-04-30 2014-11-17 株式会社沖データ 発光装置、その製造方法、画像表示装置、及び画像形成装置
DE102015107590A1 (de) 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Verfahren zur Verspiegelung von Mantelflächen von optischen Bauelementen für die Verwendung in optoelektronischen Halbleiterkörpern und oberflächenmontierbarer optoelektronischer Halbleiterkörper
DE102021129563A1 (de) 2021-11-12 2023-05-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit integrierter konverterschicht und verfahren zur herstellung eines bauelements

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DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
JPH10242620A (ja) * 1997-02-24 1998-09-11 Sumitomo Kinzoku Electro Device:Kk セラミックス配線基板の製造方法
US5831277A (en) * 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures
US6252254B1 (en) 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
JP2000208822A (ja) * 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp 半導体発光装置
JP2001111109A (ja) * 1999-10-07 2001-04-20 Sharp Corp 窒化ガリウム系化合物半導体発光素子
JP2001217281A (ja) * 2000-01-31 2001-08-10 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法
DE10010638A1 (de) * 2000-03-03 2001-09-13 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines lichtabstrahlenden Halbleiterkörpers mit Lumineszenzkonversionselement
DE10036940A1 (de) * 2000-07-28 2002-02-07 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lumineszenz-Konversions-LED
US6650044B1 (en) * 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
MY131962A (en) * 2001-01-24 2007-09-28 Nichia Corp Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
US6616862B2 (en) * 2001-05-21 2003-09-09 General Electric Company Yellow light-emitting halophosphate phosphors and light sources incorporating the same
US7008559B2 (en) * 2001-06-06 2006-03-07 Nomadics, Inc. Manganese doped upconversion luminescence nanoparticles
JP4122737B2 (ja) * 2001-07-26 2008-07-23 松下電工株式会社 発光装置の製造方法
DE10147040A1 (de) * 2001-09-25 2003-04-24 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Beleuchtungseinheit mit mindestens einer LED als Lichtquelle
JP2003124521A (ja) * 2001-10-09 2003-04-25 Rohm Co Ltd ケース付半導体発光装置
US6756186B2 (en) * 2002-03-22 2004-06-29 Lumileds Lighting U.S., Llc Producing self-aligned and self-exposed photoresist patterns on light emitting devices
JP4263453B2 (ja) * 2002-09-25 2009-05-13 パナソニック株式会社 無機酸化物及びこれを用いた発光装置
DE10316769A1 (de) * 2003-04-10 2004-10-28 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Leuchtstoffbassierte LED und zugehöriger Leuchtstoff
JP4415572B2 (ja) * 2003-06-05 2010-02-17 日亜化学工業株式会社 半導体発光素子およびその製造方法
JP3813599B2 (ja) * 2003-06-13 2006-08-23 ローム株式会社 白色発光の発光ダイオード素子を製造する方法
JP2005123238A (ja) * 2003-10-14 2005-05-12 Matsushita Electric Ind Co Ltd 半導体発光装置の製造方法および半導体発光装置
DE10351349A1 (de) * 2003-10-31 2005-06-16 Osram Opto Semiconductors Gmbh Verfahren zum Hestellen eines Lumineszenzdiodenchips
KR100624415B1 (ko) * 2003-12-17 2006-09-18 삼성전자주식회사 광디바이스 및 그 제조방법
JPWO2005106978A1 (ja) * 2004-04-28 2007-12-27 松下電器産業株式会社 発光装置およびその製造方法
DE102004021233A1 (de) 2004-04-30 2005-12-01 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung

Also Published As

Publication number Publication date
EP1917686A1 (de) 2008-05-07
CN101248538A (zh) 2008-08-20
WO2007022741A1 (de) 2007-03-01
EP1917686B1 (de) 2018-06-27
CN101248538B (zh) 2010-12-01
KR101281285B1 (ko) 2013-07-03
US20090212308A1 (en) 2009-08-27
TW200713644A (en) 2007-04-01
JP2009506523A (ja) 2009-02-12
EP1917686B9 (de) 2018-10-24
DE102005040558A1 (de) 2007-03-01
US7906352B2 (en) 2011-03-15
KR20080040778A (ko) 2008-05-08

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