TWI346249B - Photomask layout pattern - Google Patents

Photomask layout pattern

Info

Publication number
TWI346249B
TWI346249B TW096126908A TW96126908A TWI346249B TW I346249 B TWI346249 B TW I346249B TW 096126908 A TW096126908 A TW 096126908A TW 96126908 A TW96126908 A TW 96126908A TW I346249 B TWI346249 B TW I346249B
Authority
TW
Taiwan
Prior art keywords
layout pattern
photomask layout
photomask
pattern
layout
Prior art date
Application number
TW096126908A
Other languages
English (en)
Other versions
TW200905377A (en
Inventor
Kuo Yao Cho
Original Assignee
Nanya Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanya Technology Corp filed Critical Nanya Technology Corp
Priority to TW096126908A priority Critical patent/TWI346249B/zh
Priority to US11/847,345 priority patent/US7776496B2/en
Priority to DE102007049923A priority patent/DE102007049923B4/de
Priority to JP2007288567A priority patent/JP4653797B2/ja
Publication of TW200905377A publication Critical patent/TW200905377A/zh
Application granted granted Critical
Publication of TWI346249B publication Critical patent/TWI346249B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW096126908A 2007-07-24 2007-07-24 Photomask layout pattern TWI346249B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW096126908A TWI346249B (en) 2007-07-24 2007-07-24 Photomask layout pattern
US11/847,345 US7776496B2 (en) 2007-07-24 2007-08-30 Photomask layout pattern
DE102007049923A DE102007049923B4 (de) 2007-07-24 2007-10-18 Photomasken-Layoutmuster
JP2007288567A JP4653797B2 (ja) 2007-07-24 2007-11-06 フォトマスクレイアウトパターン

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096126908A TWI346249B (en) 2007-07-24 2007-07-24 Photomask layout pattern

Publications (2)

Publication Number Publication Date
TW200905377A TW200905377A (en) 2009-02-01
TWI346249B true TWI346249B (en) 2011-08-01

Family

ID=40176016

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096126908A TWI346249B (en) 2007-07-24 2007-07-24 Photomask layout pattern

Country Status (4)

Country Link
US (1) US7776496B2 (zh)
JP (1) JP4653797B2 (zh)
DE (1) DE102007049923B4 (zh)
TW (1) TWI346249B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI454954B (zh) * 2012-01-06 2014-10-01 Yao Ching Tseng Mask pattern layout method

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009271261A (ja) * 2008-05-02 2009-11-19 Powerchip Semiconductor Corp 回路構造とそれを定義するためのフォトマスク
TWI418952B (zh) 2010-03-15 2013-12-11 Au Optronics Corp 曝光機台、圖案化薄膜的形成方法、圖案化光阻層的形成方法、主動元件陣列基板以及圖案化薄膜
US8313992B2 (en) * 2010-10-04 2012-11-20 Sandisk Technologies Inc. Method of patterning NAND strings using perpendicular SRAF
JP5017442B2 (ja) * 2010-10-29 2012-09-05 株式会社東芝 半導体装置
CN107706103B (zh) * 2017-10-20 2019-11-26 上海华力微电子有限公司 一种多晶硅层桥接断路的解决方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821014A (en) * 1997-02-28 1998-10-13 Microunity Systems Engineering, Inc. Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask
JPWO2002061505A1 (ja) * 2001-01-31 2004-06-03 株式会社ニコン マスク、光学特性計測方法、露光装置の調整方法及び露光方法、並びにデバイス製造方法
EP1241525B1 (en) 2001-03-14 2004-12-15 ASML MaskTools B.V. An optical proximity correction method utilizing ruled ladder bars as sub-resolution assist features
JP2005010635A (ja) * 2003-06-20 2005-01-13 Seiko Epson Corp フォトマスク及び半導体装置の製造方法並びに光近接効果補正方法
DE102004047263B4 (de) * 2004-09-24 2010-04-22 Qimonda Ag Verfahren zum Erzeugen eines Abbildungsfehler vermeidenden Maskenlayouts für eine Maske
KR100614651B1 (ko) * 2004-10-11 2006-08-22 삼성전자주식회사 회로 패턴의 노광을 위한 장치 및 방법, 사용되는포토마스크 및 그 설계 방법, 그리고 조명계 및 그 구현방법
JP2006126614A (ja) * 2004-10-29 2006-05-18 Toshiba Corp マスクパターンデータ生成方法、フォトマスクの製造方法、及び半導体デバイスの製造方法
US7662721B2 (en) * 2006-03-15 2010-02-16 Infineon Technologies Ag Hard mask layer stack and a method of patterning
US7727687B2 (en) * 2006-06-15 2010-06-01 Synopsys, Inc. Method and apparatus for determining whether a sub-resolution assist feature will print
US7648805B2 (en) * 2006-12-06 2010-01-19 International Business Machines Corporation Masks and methods of manufacture thereof
JP5035537B2 (ja) * 2007-10-31 2012-09-26 大日本印刷株式会社 階調マスクの欠陥修正方法および階調マスク

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI454954B (zh) * 2012-01-06 2014-10-01 Yao Ching Tseng Mask pattern layout method

Also Published As

Publication number Publication date
JP2009031716A (ja) 2009-02-12
JP4653797B2 (ja) 2011-03-16
TW200905377A (en) 2009-02-01
US20090029267A1 (en) 2009-01-29
US7776496B2 (en) 2010-08-17
DE102007049923B4 (de) 2010-10-28
DE102007049923A1 (de) 2009-02-05

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