TWI345300B - Electrostatic discharge protection device - Google Patents

Description

1345300 096001 235〇8twf.doc/n IX. Description of the Invention: [Technical Field] The present invention relates to an electrostatic discharge protection device, and more particularly to an electrostatic discharge prevention for avoiding leakage current in a non-electrostatic discharge mode 1 device. Sniffing [Prior Art] Electronic products may be damaged by electrostatic discharge (ESD) in actual use environments. Since the electric discharge voltage is much larger than the power supply voltage generally provided, when the static discharge occurs, the electrostatic discharge current is likely to burn the components. Therefore, some electrostatic discharge protection measures must be taken in the circuit to effectively isolate the electrostatic discharge current to avoid component damage. Conventional electrostatic discharge protection circuits are mostly implemented by gate-groun (gate-groun) (eg n-ch-el metalocide-semiconductor (GGNM0S) transistors. Figure 1 shows the grounding n-type Electrostatic discharge protection device implemented by gold oxide semi-transistor. Please refer to Fig. 1> N-type gold oxide semi-transistor 103 is a thick oxide layer (thick-like gold oxide semi-transistor, and N-type gold oxide half) The contact voltage (trigger_〇n voltage) Vt of the transistor 103 is between 6 and 10 volts (V), for example, vt = 8 V. If the operating voltage of the nuclear u circuit 1 〇 2 (pr〇gram 仰他弘)% Less than the contact voltage of the N-type MOS transistor 103, for example, when the electrostatic discharge occurs, the high voltage of the electrostatic discharge may be made before the N-type MOS transistor (10) is turned on. The core circuit 102 operates. Therefore, the electrostatic discharge current cannot pass through the N-type MOS semi-electric crystal boat 1345300 096001 23SQ8twf.doc/n =1=the ground voltage line vss' and the core power is turned into the external circuit, all Power supply, electrical grounding 1 (four) connection to the core circuit 102, so the core circuit is moved Under normal operating voltage, the 'electrostatic discharge protection circuit method is introduced by itself (4) to the "electrostatic discharge occurs, the electrostatic discharge is 2塾4' and the static electricity is widely guided in the static release. The method is to use surface touch to reduce the contact voltage of the gold-oxygen semi-transistor, and the contact voltage of the gold-oxygen semi-electrical solar body is about lv. The electrostatic discharge protection device using surface triggering technology is, for example, ΐ^ When the core circuit 202 is in normal operation, the working Vp (for example, Vp=7.5V) is supplied to the pad 201, and the RC circuit formed by the Leiyang Wei η provides a high level of gold == 208a and N type gold rolled semi-transistor. · b constitutes the opposite (four) 2〇

= 2 8 = type gold oxide semi-transistor 2_ conduction, so N does not conduct two] the rest is low to the ground voltage, but not to pass the current to pass the current through the _ gold oxide semi-transistor to the ground, and enable the core circuit working normally. In addition, when the electrostatic discharge occurs, the electrostatic discharge 2〇1: through the P-type MOS transistor, a high === to the idle pole of the N-type MOS transistor 203, 203 is turned on, · static electricity The discharge current is directed to ground VSt. However, 'providing a stable operating voltage % makes the core circuit view 1345300 096001 23 508twf.doc/n to operate normally for a period of time. During the period when the operating voltage Vp is increased, for example, the operating voltage Vp is increased from 〇V to 3.3V, which is likely to cause the p-type MOS transistor 208a inside the inverter 208 to be turned on, thereby making the ^^ type gold The oxygen semiconductor 203 is turned on, causing a portion of the current to be conducted to the ground VSS through the N-type MOS transistor 203. Therefore, the design of the ESD protection circuit must also prevent the occurrence of leakage current to avoid affecting the operation of the core circuit. 0. It is worth mentioning that the gate of the MOS-type MOS transistor 203 is coupled to an electrical connection. The pad of the power supply voltage 201, where the pad 2〇1 is not allowed to be electrically connected to the swing voltage to ensure that the core circuit 2〇2 is operated normally, and the N-type MOS transistor 2〇3 is It is not conductive, and it cannot be floated, input pads or output soldering.塾 Figure 2B纟 shows the electrostatic discharge protection device of Figure 2A. Referring to FIG. 2B, the welding bead 201 is electrically inoculated to transfer 7 3:3 V), and the welding bead 2.9 is the input welding pad or the infusion pad. • == 209 is entered, the welding bead 201 can be regarded as; The transistor 208a is connected to the S and τ 高 高 , , , , , , , , , , , , , , , , , 勹 勹 勹 勹 勹 勹 勹 勹 勹 勹 勹 勹 勹 勹 勹 勹 勹 勹 勹 勹 勹 勹The invention provides an electrostatic discharge anti-diffuse device for electrostatic discharge anti-diffuse device, which is used for plugging in a non-electrostatic discharge mode of 96 〇〇 1 23508 twf.doc/n. The invention has a light + λ pole voltage, so that the gold oxide half-crystal of the gold oxide discharge protection function is closed. The invention proposes to prevent leakage current from occurring. The device includes a first-gold A discharge protection device. This electrostatic discharge protection group. The first-total 氡 曰 曰 曰 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The electric discharge protection detection module is consumed between the fourth; = and the second conductive path. In the electrostatic discharge protection mode; the conductive path between the 'by the electric discharge' crystal conduction. The plug-in voltage module is used to plug the gate voltage of the first-gold oxide semi-transistor under the non-static first:: oxygen;: ί, so that the younger crystal is not conductive. Including the electrostatic discharge protection device of the top, in the embodiment, the module-capacitance, and the inverter are detected. The first - the first of the resistance - dt, !. The first end and the second end of the first capacitor are respectively coupled to the "end" and the second conductive path. The input end of the inverter and the second end of the refractory first-resistance and the first-stage of the galvanic-oxygen semi-transistor, the electrostatic discharge protection device of the upper 4, the module package ifr capacitor in the embodiment The first - the resistor, and the inverter. The first-end of the capacitor - the leading path. The first end and the second end of the first resistor respectively connect the second end of the electric device and the second conductive path. The input end and the output end of the inverter respectively consume the second end of the first capacitor and the first gate of the golden oxygen semi-transistor 096001 23508twf.doc/n two ίί static: the enemy electric tamper, in the embodiment The voltage mode is made, and it is consumed by the younger brother: the pole between the gold gas and the semi-transistor. The above description of the static electricity, the Thunder, and the first capacitor are coupled to the first module. The first end of the capacitor and the first end of the second end of the resistor and the gate of the m-oxygen semiconductor. First-conducting path. The smear-saw is coupled to the second end of the first capacitor and the second electrical protection device. In the embodiment, the detection module package is said to be worn and the first capacitor. The first end and the second end of the first resistor are a capacitor conductive path and a gate of the first metal oxide half transistor. The second-electrode=end and the second end are connected to the second end of the first-resistance and the first electrostatic discharge protection device, and the implementation of the financial plug-in surface is as follows: a brother-and-gold-oxide semi-transistor. The first, the second, the pole and the closed pole of the second oxy-halide transistor are connected to the conductive path and the third conductive path of the MOS transistor. In the case of the electrostatic discharge protection device, in the embodiment, the voltage is tied, and the second generation of the metal oxide semiconductor is used. The first, =, and the gate of the second MOS transistor are the conductive path and the third conductive path of the _th-thoxy-oxygen semiconductor. Face: 勹 Electrostatic discharge protection device, in one embodiment, the voltage is tied? Gold ^ main: gold oxide semi-transistor, and third gold oxide semi-transistor. The crystal body, ―, the second source/dip pole respectively consumes the first gold oxide half ‘the first pole and the first conductive path. The first of the third gold-oxide semi-transistor 1345300 096001 23508twf.doc/n the second source-level pole and the _ respectively output the third conductive path, the gate of the second gold crystal and the second-conductor circuit. The electrostatic discharge crucible device described in the embodiment is a plug-in electric group including a second gold-oxygen semi-transistor and a third gold-oxygen semi-electrode. The second - second source / bungee of the second golden milk semi-transistor

The gate of the body and the second conductive circuit. The first electrified source of the third MOS transistor is a pure third conductive path, a gate of the second crystal, and a second conductive path. The electrostatic discharge protection device of the above embodiment, in the embodiment, the voltage mode group includes a second gold oxide semi-transistor and a second resistor. The second gold-oxygen semi-electrode 体 body source / bungee _ first - gold oxygen semi-transistor between the pole and the first + electric. The first end and the second end of the resistor are respectively connected to the third V electrical path and the second gold oxide half transistor gate. The above-mentioned electrostatic discharge anti-Wei, in the - - - - - - - - - - - - - - - - - - - - - - Second ΐΐ

: 曰 body 2, the second source level _ connected to the first and the gold-oxide half-electrode between the pole and the conductive path and the gate of the second MOS transistor. In connection with the first invention, the structure of the recording voltage module is used to plug the gate voltage of the gold-oxygen semiconductor transistor having the electrostatic protection function. Therefore, the present invention = electric arranging Wei Wei in the secret money recording mode to make the gold lead through the leakage current, and in the electrostatic discharge mode and the electrostatic discharge current to avoid component damage. The above and other objects, features and advantages of the present invention will become more apparent. 1345300 096001 23508 twf.doc/n is easy to understand, and the following is a detailed description of the present invention.口八 [Implementation]

In general, the ESD protection device has two modes of operation (ie, normal operation mode) and when the static circuit 4 is operated, the ESD protection is installed by itself. Therefore, the ESD protection device occurs for the core L 2 electrostatic discharge. At the time, the electrostatic enemy protection device must have the function of X and the children's road, and the electrostatic discharge electric pressure is pressed, the grounding electric hard line or other welding pads. i 崎 引 糸 糸 糸 电 2 2 : : 静 静 静 : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : The leakage current of the core circuit) is quite considerable. The field, the static electricity that occurred, and the prevention of leakage current in Figure A Figure 3A is the urgent need for clothing. Set. Please refer to the ® 3T for the 5th - the electrostatic discharge protection of the embodiment, the 353Gf electrostatic discharge protection device including the MOS semi-transistor to guide the smuggling electricity and the plug = 3G5. It is assumed here that the main type of gold oxide semi-electric crystals such as electric fairy's static discharge protection unit 3〇4 contains n applied to other embodiments is not limited to this range, still can be electric discharge protection single &amp; 3 () = where The design. As shown in Fig. 3b, static is composed of N-type oxy-oxygen semiconductor 3〇4b and N-plastic 1345300 096001 23508 twf.doc/n MOS transistor 304C. Oxygen ^ _ Internal N-type gold 304 & amp amp amp 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋The transistor 2 is coupled to the first conductive path 301 and the second 3G2, respectively, for conducting between the electrostatic current and the second conductive path in the electrostatic discharge protection mode. - between the conductive path 301 and the second conductive path 3Q2, and the = module 306 includes a resistor 306a, a capacitor _, and a p-type MOS half. &amp; ^ Module 305 includes an N-type MOS transistor, wherein the first and second source/drain electrodes of the type 全: ?:3〇5& respectively consume the N-shade gate and the second conductive path And the gate of the N-type metal 虱 + electric body 305a is coupled to the third conductive path 3〇3. ^ ^ The high electric power of the electric discharge (4) 烊 pad 3G7 (for example: input output pad) enters, through the reverse phase ^〇9 Internal p-type = 2 3 High-level signal is drawn to the N-type MOS transistor; 'Met N-type MOS semi-transistor a. Therefore / lead to H f&quot; (4) Electrostatic discharge current electric discharge Γ 2 (for example, grounding electric (four) line) to avoid the static enemy electric current dam destroying the core circuit 308. In this embodiment, the third conductive path 303 may be a first The line (such as the system power (four) line VDD) is used to provide the closed-end of the 1:1 type MOS transistor. In normal operation mode, $ system, = 12 1345300 09600] 23508twfdoc / n the rail line VDD will N-type gold-oxygen semi-transistor% = When the electric protection device is in normal operation (ie, non-electrostatic discharge ^; 槿口^静^的闲罐') N-type MOS semi-transistor 304 is hunted to prevent leakage current. Not to pass 'even if in non-electrostatic discharge protection mode ^Ws, ing voltage), „„„ 3〇6 ^ component N-type MOS semi-transistor; mr, non-conducting 'to avoid leakage current. At this time, the high voltage of the electrostatic discharge from the solder pad 307 into the conductive path 303 can be regarded as floating, so that the p-type gold can be transmitted through the inside of the inverter 3〇9 without being affected by the heart of ν ==:=3 The Japanese body 3〇6c couples the south level signal to the gate of the Ν-type MOS transistor 304a to turn it on.虱 包 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日The transistor 305a can be designed as a gold oxide semi-transistor of a thin oxide layer or a gold-oxygen semi-electrode of a ruthenium emulsion layer according to the requirements of the oxygen user. The "Seat 3" example can be implemented using the G.18 (4) (1 t.3V) process. = The first voltage of the rail from the 3〇3 electrical connection is the same as the voltage connected to the soldering 307, then the width-to-length ratio (W/L) of the _ gold-oxide semi-transistor 306d 〇'· 4#m /〇.44# m, P type MOS transistor 306c width to length ratio 13 (S) 1345300 096001 23508hvf.doc / n (W / L) can be a long ratio (W / L) can be. (4) ^ type gold oxygen semi-electric The width of the crystal 305a is yjM曷j "m/〇44. <The area is much smaller than that of the P-type gold-oxygen semi-electrode gold-milk semi-transistor 305a, so that the N-type tilt-type gold-oxygen semi-transistor is interfering with N-counter oxygen. The semi- &amp; recording process is not in addition, if the first: ^: r of the closed pole electric 遂. Brother - * conductive path 303 electrical 々 々 々 垫 307 307 electrically connected to the electricity = the younger brother - voltage and float It only needs to be smaller than the solder pad 307 ^ In the case of the court, the first voltage crystal 30 knows that the electric dust connected to the coin factory can be used to prevent the leakage current from being generated by the gate of the metal oxide half-electricity. - Real_Electrical discharge protection installed two pickups = pressure r' ΛΓ Figure 3C differs from Figure 3 在于 in the multi-Hong Kong, and 1 拴 gold oxide semi-transistor 304a gate voltage. Group 311 includes 3 mountains' of which type of gold oxide and semi-electricity The first and second sources of the crystal 311a are coupled to the input terminals of the system voltage rail VDD and the inverter 309, and the gate of the P 垔 gold-milk semiconductor 311a is coupled to the fourth conductive path 3ι. In the embodiment, the fourth conductive path M0 may be a second voltage line 'to provide a second voltage to the P-type MOS transistor, so that the P-type MOS transistor 311a is turned on. Therefore, in the non-electrostatic Under the discharge protection wedge type, the p-type MOS transistor 311a is turned on to provide a high-level signal to the input terminal of the reverse 303, and the gate voltage of the n-type MOS transistor is reduced. In another embodiment of the present invention, only one set of clamp voltage modules 311 can be used to clamp the gate voltage of the N-type MOS transistors 3 〇 4a. Free 1345300 096001 23508 twf.doc/n Example 3A The detection module 306 of the detection module includes a capacitor 401 and a resistor 4〇2, and the first end and the second end of the basin are connected to the first end of the first and second terminals, and the resistor 402 The second end is coupled to the first: the node in the module tear of 4〇2 is connected to the static electricity as described in the above embodiment FIG. 3A, two 304. Shi = 3, voltage mode ~- Kind; According to Figure 5A, the technical voltage touchdown includes N-type road and Ρ-type MOS semi-transistor view, wherein the cow = body 5 01, the first and second source / 汲 pole are connected to the electrostatic discharge prevention The crystal 501 has two conductive paths 302. The Ρ-type MOS transistor 5G2 and the immersion pole and the gate are respectively connected to the third guide hole 3〇3, the gate of the second source/body 501 and the second conductive path 3〇 2. 1 MOS semi-electrode crystal as described in the above embodiment FIG. 3A, FIG. 5B gives _ example of the voltage module 3 〇 5 of FIG. 3A, ', ' invention implementation map =, mask power _ group 305 includes N-type gold body ° ^ reference and resistance 5 〇 4. The first and the second ends of the N-type gold-oxygen semi-transistor 5〇3 are respectively coupled to the electrostatic discharge protection unit, the brother-source and the nuclear resistor 5〇4, and the N-type gold oxide half The gate of the transistor 503.仫 303 and worth mentioning that the above implementation of the static electricity is often == two, 疋J using p gold milk + transistor implementation, followed by 15 1345300 096001 23508twf.doc / n I =: an embodiment to have Usually, the knowledgeer can lightly calculate the electrostatic setting of the other embodiment of the invention. Referring to Figure 6A', the ESD protection device package = 604a, the detection module 606, and the pickup voltage module 6 remain. p :

= body, the first and second source-level poles are respectively transferred to the J-channel 601 and the second conductive path 6〇2, for conducting the static electricity under the conduction of the first-conductor circuit via the 6 () 1 disk = protection mode between. The side group 606 has a conductive path 6〇1 and (2) ^0^.1 ^ ^t^ 606a; t ~6ν〇Γ: and an inverter 606c. . The resistor 606b, in the p-type includes (2) a gold-oxygen semi-transistor coffee, wherein the type of gold-oxygen semi-electricity is two-half: semi-electric, and the gate of 605a is switched to the third conductive path two. And the P-type gold milk r discharges the high voltage self-welding pad 607 (for example: when the input pad bite into the 'detection module _ provides bias = the gate of the body 604a, so!> type Wang Haowu Children = lead electrostatic discharge current to the first - guide circuit ^ Xie n charge 3 line V = ' (four) free "discharge pattern (four) core circuit slave after the example, the third conductive path _ can be - the first voltage ^^第—voltage to Ρ-type MOS semi-transistor isolated mode, t transistor 6G5a is turned on. Therefore, in the non-electrostatic discharge prevention, work through the P-type MOS 605a to pull up p 096001 23508twf.doc/i, the gate voltage of the gold oxide semi-transistor 6〇4a, to avoid leakage current

Figure 0 shows an electrostatic discharge protection device according to an embodiment of the present invention. Referring to Fig. 6A and Fig. 6B, Fig. 6B is the same as Fig. 6A* in that the voltage of the P-type MOS transistor 611 is known to be the voltage of the P-type MOS transistor. The plug-in voltage module 611 includes an N-type MOS transistor 6 仏, a second N-type MOS transistor 611 &amp; the first and second source / drain and idle pole = do not lightly accept bribes VSS, reverse The input end of the phase and the fourth V electrical path 610. In this embodiment, the fourth conductive path 610 may be a second voltage, and the line ' is used to provide a second voltage between the N-type MOS transistors 6Ua =' to turn on the N-type MOS transistor 611a. Therefore, in the non-electrostatic discharge mode; in the vine mode, 'passing through the N-type MOS half-day solar body 61U to provide the = level signal to the input end of the inverter 606c, and then pull up the p-type MOS half = crystal The gate voltage of 604a makes the P-type MOS transistor 6 unknown, so as to prevent leakage current. In another embodiment of the invention, only one set of clamp voltage modules 611 can be used to latch 60 gate voltages. As shown in FIG. 6A of the above embodiment, FIG. 7 illustrates another implementation circuit of the detection voltage module 606 of FIG. 6A. Referring to FIG. 7, the detecting module includes a resistor 7〇1 and a capacitor 7〇2, wherein the first end and the second end of the resistor 7〇1 are respectively coupled to the first conductive path 601 and the first end of the capacitor 702, and the capacitor The second end of the 702 is connected to the second conductive path. The node B in the detection module 606 is coupled to the electrostatic discharge protection unit 6〇4. 17 1345300 096001 23508twf. d〇c/n As shown in Fig. 6A, the example of Fig. 6A is used to detect the power module 6〇='·, which is shown in Fig. 8A. The voltage module 6〇5 is packaged to implement the circuit. Please refer to the N-type gold-oxygen semi-electron crystal experience two" transistor 801, the second source / bungee sub-electrostatic discharge anti-two-half transistor 8〇1-conductor circuit #6〇2. N-type gold oxygen The semi-electric ^ 604 and the first pole and the gate are respectively connected to the third-conductor circuit, the second source/body is closed, and the first-conductor circuit is 6-inch. P-type gold-oxygen semi-electric The above-mentioned λ embodiment is illustrated in FIG. 6A, and FIG. 8B is the other recording of the clamping voltage module 605 in FIG. 6A: in the embodiment 8B of the present invention, the detection voltage module 6〇5 includes an eight/chiel road. Refer to the diagram resistor 804. p-type gold oxide 4th to 虱 semi-transistor 803, and 隹 隹 电 电 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8

The first end and the second end of the resistor _ are respectively connected to the = conduction = diameter, and the gate of the electric MOS transistor 803. - stylus path 603 and P. In summary, the voltage module of the embodiment of the present invention is used to bolt the electrostatic discharge protection device to the gate voltage of the utilization body, so as to have the electrostatic discharge protection The semi-electrode is not conducting to avoid leakage current. Month: Under the gold-oxygen semi-transistor, it can also have an electrostatic discharge protection function of eight kilograms of electrostatic discharge protection mode. The present invention has been described in terms of a preferred embodiment of the present invention. It is to be understood that the present invention is not limited to the spirit and scope of the present invention. For those who are interested in this work, there are two changes and retouchings in the field, 18 1345300 096001 23508twfdoc/n, the scope of protection of this invention is subject to the latter. Nothing is defined by the scope of the patent of A-print. [Simple description of the diagram] The enemy's electricity is an electrostatic discharge protection device based on the electrostatic surface triggering technology of the grounding metal oxide semiconductor. The mode is not another handle connection of the ESD protection device of Figure 2A. Θ A, e show another embodiment of the electrostatic discharge protection device of the present invention, which is an embodiment of the invention, the 3A towel electrostatic discharge protection unit. Set. FIG. 3C illustrates an electrostatic discharge protection device according to an embodiment of the present invention. FIG. 4 is a schematic diagram of the detection module of FIG. 3A according to an embodiment of the present invention. j&quot; However, Fig. 5A shows an implementation circuit of the voltage module of Fig. 3 in the embodiment of the present invention. The figure is shown in FIG. 3 as an embodiment of the present invention. An electrostatic discharge protection device according to an embodiment of the present invention is shown in FIG. 6A, which is an electrostatic discharge protection device according to an embodiment of the present invention. 1345300 096001 23508 twf.doc/n FIG. EMBODIMENT OF THE INVENTION Another implementation circuit of the detection module of FIG. 6A is shown in FIG. 6A. FIG. 8A illustrates another embodiment of the embedding voltage module of FIG. 6A according to an embodiment of the present invention. - Figure 8B illustrates another embodiment of the embedding voltage module of Figure 6A in accordance with an embodiment of the present invention. [Description of main component symbols] φ VDD: system voltage rail VSS: ground voltage rail 101, 201, 209, 307, 607: pads 102, 202' 308, 608: core circuits 103, 203, 208b, 304a, 304b , 304c, 305a, 306d, 501, 503, 611a, 802: N-type gold oxide semi-transistor

208a, 306c, 311a, 502, 604a, 605a, 801, 803: P-type MOS transistors 206, 306a, 402, 504, 606b, 701, 804 · Resistors # 207, 306b, 401, 606a, 702: Capacitors 301, 601: first conductive paths 302, 602: second conductive paths 303, 603: third conductive paths 3〇4, 6〇4: electrostatic discharge protection units 305, 31 605 '611: plug voltage module 306, 606: detection module 309, 606c: inverter 310, 610: fourth conductive path 20

Claims (1)

100-3-22 X. Applying for a patent garden: ^A kind of rose protection split, including ··: diameter 'the second its first-position pole coupling 卞 conductive electric protection wedge type lower coupling and second a conductive path between the electrostatic discharge paths; an electrostatic current flowing between the first conductive path and the second conductive detecting module, &amp; And the second conductive path oxy-halogen transistor between the pole-mode, -biased,-gold-module includes -inverted MOS semi-transistor conduction, wherein the body of the gate-phase device, the output end thereof Coupling the first gold-oxygen semi-electric crystal Beici=voltage module, connected to the output end of the inverter for use in the static discharge fp core mode (4) the gate voltage of the first-gold-oxygen semi-transistor 'Making the first-gold oxide semi-transistor non-conducting; and a first voltage module, consuming to the input end of the inverter for suspending the inverter in the non-electrostatic lightning protection mode The terminal voltage is input to make the first MOS transistor not conductive. 2. The ESD protection device of claim 1, wherein the detection module comprises: a first resistor, the first end of which is coupled to the first conductive path, and the second end of the first resistor An input end coupled to the inverter; and a first capacitor having a first end coupled to the second end of the first resistor and a second end connected to the second conductive path. 3. The electrostatic discharge protection device as described in the first paragraph of the patent application. 21 1345300 100-3-22 The detection module includes: a first capacitor, the first end of which is coupled to the first a second end of the first capacitor is coupled to the input end of the inverter; and a first end is coupled to the second end of the first capacitor and coupled to the second end of the first resistor The second conductive path. 4. The electrostatic discharge protection device of claim 1, wherein the plug voltage module is coupled to the gate of the first MOS transistor. 5. The ESD protection device of claim 1, wherein the detection module comprises: a first capacitor having a first end coupled to the first conductive path and a second end coupled to the first end a gate of a MOS transistor; and a first resistor having a first end coupled to the second end of the first capacitor and a second end coupled to the second conductive path. 6. The ESD protection device of claim 1, wherein the detection module comprises: a first resistor, the first end of which is coupled to the first conductive path, and the second end of which is coupled to the first a gate of a MOS transistor; and a first capacitor having a first end coupled to the second end of the first resistor and a second end coupled to the second conductive path. The electrostatic discharge protection device comprises: a first MOS transistor, the first source/drain is coupled to a first conductive path, and the second source/drain is coupled to a second conductive path, The method is configured to conduct an electrostatic current between the first conductive path and the second conductive path in an electrostatic discharge protection mode; 22 1345300 100-3-22 a detecting module coupled to the first conductive path and the second Between the conductive paths, a bias is applied to the gate of the first MOS transistor in the ESD protection mode to turn on the first MOS transistor; and a voltage module is used The first MOS transistor is not turned on by plugging the gate voltage of the first MOS transistor in a non-electrostatic discharge protection mode, wherein the plug voltage module includes: a second MOS half a transistor, the first source/drain is coupled to the gate of the first MOS transistor, the second source and the pole stalk are connected to the conductor's conductive path, and a third MOS transistor is The first source/drain is coupled to a third conductive path, and the second source/drain is coupled to the second gold The gate electrode of the transistor and a half, having a gate coupled to the first conductive path. 8. The ESD protection device of claim 7, wherein the first conductive path is a system voltage rail coupled to an input pad or an output pad. 9. The ESD protection device of claim 7, wherein the second conductive path is a ground voltage track coupled to an input pad or an output pad. 10. The electrostatic discharge protection device of claim 7, wherein the third conductive path is a first voltage line. 11. An ESD protection device, comprising: a first MOS transistor, a first source/drain is coupled to a first conductive path, and a second source/drain is coupled to a second conductive path. Conducting an electrostatic current between the first conductive path and the second conductive 23 100-3-22 path in an electrostatic discharge protection mode; a detection module, for between: for static electricity = 1: conductive, The second conductive path of the oxygen semi-transistor is closed to provide a first-to-first gold-to-a-electron module, which is turned on by a gold oxide semi-transistor; and the first-gold oxide Semi-electric crystal = plug-in non-conducting in electrostatic discharge protection mode, = plug-in electricity] gold gas semi-transistor ^: win = body 2 first-source / drain pole coupling the first-path; and /, brother - source And the drain electrode is coupled to the conductive path of the second conductive circuit, and the first metal/semipolar transistor is coupled to the third electrode, and the second metal oxide semiconductor transistor is turned on. The electrostatic discharge protection described in item 'n1 is loaded into the soldering raft or the interesting voltage trajectory', which is connected to the input, and is replaced by the static electricity input or the diameter as described in the scope of the patent. Grounding voltage trajectory 'axis to; 15 · An electrostatic discharge protection device, including: path!: body 'its first source / drain coupling - first - conductive /, first source / drain coupled to a second a conductive path for conducting static electricity to the first conductive wheel and the second conductive detecting module under the electrostatic discharge 24 H) 〇 100-3-22 (2), coupling the first conductive circuit fish to The electrostatic discharge protection mode is lifted; the transistor's pole is 'turning on the first gold-oxygen semi-transistor; and the gate voltage for plugging the gold-rolled +3⁄4 body in the non-electrostatic discharge protection mode Non-conducting, it is expected that the (four) electric surface group includes: Qiao + electric 曰曰 body gold oxygen semi-electrical connection of the first - jing; and the first source of the source is extremely consuming the first - lead circuit - the end of the sister = Chu resistance 'The first end is connected to a third conductive path, and the other is the gate of the second MOS transistor. - The installation of the ESD protection system as described in claim 15 of the patent scope is the system voltage line, which is connected to the two-input pad or one-out pad. In the case of Jing set 丄7, the electrostatic discharge protection mentioned in item 15 of the scope of interest is inserted into the sputum pad or the path is the grounding voltage line, listening to the transmission, and the J: Zhongli Liguanwei 15th The electrostatic discharge protection shock/, the second conductive path is a first voltage trajectory. 19. An electrostatic discharge protection device comprising: a path=金ί半晶晶's first source/none-first-conductive/, and a source/drain is coupled to a second conductive path for electrostatic discharge 25 1J453〇〇100-3-22 The type of conductive static current flows in the -guide circuit 彳__二^ The gate is measured and 'lightly connected to the first conductive path and the first-storage 3' for electrostatic discharge In the protection mode, the π-electrode is provided in the bias circuit to make the first-gold-oxygen semi-transistor turn on the first gold-to-gold oxide semi-transistor, and the emitter voltage module includes The tnn first-source &quot; and the pole coupled to the first path; and the -first source/wave_connected to the second conductive circuit ^ &quot;'the second resistor 'The first end of the connection - the first = lead Thunder" &quot; The second end is coupled to the second MOS transistor, after the pole circuit is placed, the electrostatic discharge protection described in item 19 of the range The Wei-in solder pad or one-round t-path is the system voltage line, which is transferred to an input, wherein the electrostatic discharge protection of the circumference 19 is loaded into the pad or the path is connected. Line voltage rail, its light output is connected to a set: of two: In the item of the dagger electrostatic discharge protection means surrounding Ϊ conductive path is performed a first voltage line 26.