TW200840016A - Electrostatic discharge protection device - Google Patents

Abstract

An electrostatic discharge (ESD) protection device is provided herein. The ESD protection device comprises a first metal-oxide-semiconductor (MOS) transistor, a detect module, and a tied voltage module. A first and a second source/drain of the first MOS transistor are respectively coupled to a first and a second conductive path. The first MOS transistor transmits electrostatic currents between the first and the second conductive path when an ESD protection mode is occurred. The detect module is coupled between the first and the second conductive path and configured to provide an offset voltage to the first MOS transistor to make the first MOS transistor conduct when it is in the ESD protection mode. The tie voltage module is configured to tie a gate voltage of the first MOS transistor to make the first MOS transistor not conduct when it isn't in the ESD protection mode.

Description

200840016 υ^ουυι 23508twf.doc/n IX. Description of the Invention: [Technical Field] The present invention relates to an electrostatic discharge protection device, and more particularly to an electrostatic discharge that prevents leakage current from occurring in a non-electrostatic discharge mode. defensive equipment. ° [Prior Art] Electronic products may be damaged by electrostatic discharge (ESD) in actual use. Since the electrostatic discharge voltage is much larger than the power supply voltage generally provided, when the electrostatic discharge occurs, the electrostatic discharge current is likely to burn the components. Therefore, some electrostatic discharge protection measures must be taken in the circuit to effectively isolate the electrostatic discharge current to avoid component damage. The conventional electrostatic discharge protection circuit is mostly implemented by a gate grounded n-channel metal-oxide-semiconductor (GGNMOS) transistor. Figure i is a diagram showing an electrostatic discharge protection device implemented by crystallizing a n-type gold oxide with a dummy electrode. Referring to Figure 1, N =, oxygen semi-transistor 1 〇 3 is a gold oxide semi-transistor using a thick oxide layer to smash xide), and the contact voltage of N-type MOS transistor 1 〇 3 is 〇 11 voltage^ is between 6 and 10 volts (v), for example: v (four) v. If nuclear. The working voltage of the turtle road 1〇2 (pr〇gram v〇itage) V〆], the contact voltage Vt of the (4) MOS transistor 103, for example, Vp 7.5V, when the electrostatic discharge occurs, the static electricity The high voltage of the discharge enters from the pad 101, so that the core circuit 1〇2 can be operated before the N-type MOS transistor 1〇3 is not turned on. Therefore, the electrostatic discharge current cannot be guided to the ground voltage trajectory via the N-type MOS transistor, and the internal components are damaged. The core circuit 102 causes the connection of the core circuit 1G2 due to the pad 1G1 as an external circuit, and all the power and electronic signals are connected to the core circuit 1G2. The electrostatic discharge protection circuit: the circuit is guided by itself. To grounding, external: package v, 顼 blocking current electric discharge occurs, static electricity = = 塾 etc. and in the static discharge current. And one of them - the ground to guide the static electricity =, the technology to reduce the gold oxide semi-electric crystal = 2 touch The contact voltage of the gold-milk semi-transistor is about lv. Touch - Figure 2A is not a surface. Please refer to _A, when the core protection power supply voltage Vp (for example: V7 5v), provide work gentleman lane, > I 201 ' % ί1 and 206 and Leiding RC circuit provides high level signal and two 208a and]Si type gold oxide +3 1 milk half turtle crystal

Inverted by the inverse 8 2G8nmb configuration _. The type of gold oxide semi-transistor is connected with the lion, so the core circuit of N can operate normally. The high-voltage self-welding of the electrostatic discharge to the N-type gold-oxygen semi-Thai Xingxing crystal 2〇8a will turn the south-level signal surface into contact, and then the pole, so that the N-type gold-oxygen semi-transistor iron and the planting static The packet discharge current is directed to the ground VSS 〇α for a stable operating voltage Vp to allow the core circuit 202 to operate for a period of time in which 200840016 1 23508 twf.d〇c/n is normally operated. During the period when the operating voltage Vp is increased, for example, the operating voltage Vp is increased from 〇V to 3 3V, which may cause the P-type MOS transistor 208a inside the inverter 208 to be turned on, thereby making the type ^2 The gold-oxide semi-transistor 2〇3 is turned on, causing a part of the current to be conducted to the ground vss through the N-type MOS transistor 203. Therefore, the design of the ESD protection circuit must also prevent the occurrence of leakage current to avoid affecting the core circuit.

It is worth mentioning that the anode of the N-type MOS transistor 2〇3 is coupled to a solder pad electrically connected to the power supply voltage. Here, the solder bump 2〇1 is not allowed to be electrically connected to the swing voltage (swing Voltage), to ensure that the core circuit 2 = normal operation, 'N-type MOS transistor 2 〇 3 is non-conducting, and ^ 201 can not be floating state, input pad or output soldering. Fig. 2B shows another type of electrostatic discharge protection device of W2A. Please note 2B, the soldering iron 201 is electrically connected to a stable power supply (such as: 3.3V), and the soldering pad 209 is input or 输 winter (= electric high voltage self-welding), the solder pad 2 〇1 can be =j over p-type transistor 2〇8a to lightly match the high-level signal to the N-type full, f=to make it conductive, called 5丨 electrostatic discharge current. Secret (for example: 7.5V) to the details, The core circuit ^i, man-hour, will cause the p-type half-turn wide-lift operation inside the inverter 。. Jk becomes leakage current [Summary] The present invention provides an electrostatic discharge protection device for non- Electrostatic discharge 7 200840016 x 23508twf.doc/n In the electric mode, the gate turtle pressure of the gold-oxygen semi-crystal with electrostatic discharge protection function is plugged, so that the MOS transistor is not turned on to prevent leakage current. The invention provides an electrostatic discharge protection device, which comprises a first metal oxide semi-transistor, a detection module, and a detection voltage module. The first source/drain of the first gold-oxygen semiconductor The second source/drain is respectively connected to the first conductive path and the second conductive path, so as to transmit in the electrostatic discharge protection mode Conducting static electricity flows between the first conductive path and the second conductive path. The reference module is lightly connected between the first conductive path and the second conductive path, thereby providing a bias voltage to the first gold oxide in the electrostatic discharge protection mode The gate of the semi-transistor turns on the first gold-oxygen semi-transistor. The plug-in voltage module is used to embed the gate voltage of the first gold-oxide semi-transistor in the non-static/discharge protection mode to make the first gold The oxygen semiconductor transistor is not conductive. In the above embodiment, the detection module includes a second resistor, a first capacitor, and an inverter. The first end of the first resistor is connected to the first - a conductive path. The first end of the first capacitor and the second end are respectively opposite to the second end of the first resistor and the second conductive path. The input end of the inverter and the second end of the resistor are respectively connected to the second end of the resistor and the first The gate of the gold-oxide semi-transistor. The above-mentioned electrostatic discharge protection device, in one embodiment, detects the first valley of the module, the first resistor, and the inverter. The first end of the first capacitor is connected to the second Conductive path. The first end of the first resistance and the second end of the sub-job = private end n and the second conductive circuit The input end of the inverter and the end of the wheel are not connected to the second end of the first capacitor and the first phase of the golden oxygen semi-transistor. 200840016 uyuuui 23508twf.doc/n Group 2 ===: The voltage mode electric discharge protection device 'in the embodiment group includes a resistor. The first and second ends of the first capacitor are the first body of the gate. The first conductive path. The second coupling is coupled to the second capacitor. The end and the second bracket - the anti-Wei, the capacitor in the package of the solid-cut towel. The first and second ends of the first and second ends of the resistor and the gate of the gold-oxygen semiconductor transistor. Sending the "the second end of the first lighter to the second end of the resistor" and the above-mentioned electrostatic discharge protection device - including the second gold oxide semi-transistor two == shun; the poles respectively lack the first - the golden oxygen path and the first Three conductive paths. The iil electric protective device is used to embed a voltage mode in an embodiment, and a semi-transistor. The second metal, the source/drain and the gate respectively ^*ΒΘ the conductive path and the gate of the third gold-conducting transistor, the second package it, the discharge prevention, and the voltage in the embodiment A mode transistor, and a third MOS transistor. The second crystal ut η Μ \ brother, brother one source / and the pole are respectively coupled to the first gold oxide semi-electric body of the gate and the younger - conductive path. The first of the third MOS transistors, 9 200840016 uywui 23508 twf.doc / n second source / drain and gate are respectively coupled to the third conductive path, the gate of the second gold crystal and the first conductive path. In the above electrostatic discharge protection device, in one embodiment the plug voltage module comprises a second MOS transistor and a third MOS transistor. The first and second source stages of the second gold-oxide semi-transistor are connected to the gate of the gold-oxygen semiconductor body and the second conductive circuit. The first, the second source, and the gate of the third MOS transistor are connected to the third conductive path, the gate of the second MOS transistor, and the second conductive path. In the embodiment, the static protection device is used to embed a voltage mode, a noon electric body, and a second electric resistance. The second gold-oxygen semi-electricity = the body of the body, the second source/drain is coupled to the first gold first-conducting path. The m-heart of the second resistor / the idle pole of the second & and the guide track w p The second end of the second _ is connected to the gate of the third 仫 and the second MOS transistor. The above-mentioned electrostatic discharge anti-cansing group includes a second gold-oxygen half-t^ clothing = ί - "in the example of the voltage-mode crystal of the first - the second brother - resistance. The second gold-oxygen semi-electric first guide emperor a gate of a MOS transistor and a 杈 杈 杈 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二= discharge of gold and oxygen and 1 lead • discharge current _ free component _ in the electrical mode to make the above and other purposes, features and advantages of the present invention more obvious 10 23508twf.doc / n 200840016 easy to understand, the following special The invention is described in detail below. Male & ^, and with the accompanying drawings, [Embodiment] In general, the ESD protection device has an electric discharge protection mode (ie, a normal operation mode) and a static ^ Mode: Non-static = ESD protection during normal operation of the circuit;::: Protection mode. By yourself's this scale electrostatic discharge anti-Wei = enemy current does not exist. When electrostatic discharge occurs, the electrostatic core circuit is equivalent Play the role of protecting the core circuit, electric protection device Pressure rail line, grounding power line or other ^P P~4 lead 5丨 to the system power as shown in the description of Figure 2 'In the core circuit's fixed, pressure _ range, with electrostatic discharge protection function rises to stability ^ Will be turned on, causing part of the current to pass through itself = milk semi-transistor line, ground voltage trajectory or other soldering system voltage rail oxygen semi-transistor two of the blonde 1 electrostatic discharge protection device to prevent leakage current current. 1 曰 = ^ 之 实施 实施 实施 实施 实施 实施 实施 实施 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电 静电The electrostatic discharge protection unit 304 of the e* electrostatic discharge current comprises a transistor 3〇4&', but the embodiment is not limited to this range, and the design of the electric discharge protection unit can be further illustrated. As shown in FIG. 3B, The static inclusion prevention unit 3〇4 is composed of an N-type oxy-oxygen semiconductor 3〇4b and an N-type 11 23508 twf.doc/n 200840016 MOS semi-transistor 304c.

In the present embodiment, the N-type oxy-oxygen semiconductor 304a inside the electrostatic discharge protection unit 3〇4 is a gold-oxygen semi-transistor having a thick oxide layer. The first and second source/drain electrodes of the transistor 304a are respectively coupled to the first conductive path 3〇1 and the first package path 302′ for conducting static electricity to the first conductive path 301 and the first in the electrostatic discharge protection mode. The two conductive paths are between 3〇2. The detecting module 306 is coupled between the first conductive path 〇1 and the second conductive path 〇2, and the detecting 杈 group 306 includes the resistor 3〇6a, the capacitor 3 〇, and ? The MOS transistor 306c and the N-type MOS transistor 3〇6d are composed of an inverter, and the module 3〇5 includes an N-type MOS transistor, in which the transistor is The first and second source/drain electrodes are respectively coupled to the gate of the N-car=+3⁄4 crystal 3〇4& and the second conductive path, and the gate of the N-type full milk+=gate 3G5a is switched to the third conductive path 303 . ' Output & into ^ ^ ^ 悍塾 ah, for example: input welding or body 3 〇 6c will be high-level ^ ^ anti-human phase 3 〇 9 (10) P-type gold oxide semi-electrode, so that N-type gold In the mode of the oxygen semi-emulsion semi-transistor 30<, the N-type combination of the Japanese body* 111, which can prevent the electrostatic discharge from being discharged to the third transistor 3°4a in time, can be electrostatic discharge electric current in this embodiment. The second guide rail line (for example, the system = 7 can be - the first type of gold oxide half + provide the first - voltage 3 - crystal 3 〇 5a gate. In the positive f mode of operation == 12 200840016 ~J3508twf.doc/n will make the N-type MOS transistor 3G5a turn on. Therefore, when the electric anti-Wei set is in normal operation (that is, the non-electrostatic discharge is turned on, the N-type MOS transistor is applied to pull down the body 3 For example, the closed-circuit voltage makes the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Swinging her (swing her age), causing the side mode ^, the level signal ^ type MOS semi-electrode crystal a, but still = the N-type MOS semi-crystal crystal & gate voltage, = 1 oxygen ^ % Japanese body 3G4a does not conduct It is clear that the leakage current occurs. Value: In the case of the high voltage of the electrostatic discharge, the third conductive path 3〇3 can be regarded as a floating connection, so it can be used without the f ί transistor 3〇5a Under the influence of 'P type gold through the inside of the inverter 309

Oxygen "% crystal 306c couples the high-level signal to the gate of N 304a to turn it on. & gold core 曰 body material' p-type MOS transistor inside inverter 309 (4) transistor 3_- It is a gold oxide semi-transistor with a thick oxide layer, and the Ν-type MOS transistor 3〇5a inside the pick-up voltage module 305 can be designed as a thin oxide layer of gold oxide semi-transistor according to the dream or the user's requirements. Or a gold oxide semi-electrode of an oxide layer. In this embodiment, α ΐ δ / ζ π ^ υ ν ^ ν) can be used to make the third conductive path 303 electrically connected to the first - "the voltage of the ^ ^ connection" N gold Oxygen semi-transistor touch width to length ratio (W / L) can be /0.44 / zm 'P type MOS semi-transistor applied width to length ratio 13 200840016 v / / wv jade 23508twfd 〇 c / n () Sister / 0.44 #m, N type full oxygen rich ratio (W / L) can Λι β 1 Meng Hao + transistor 305a poor horse bm / 0.44 # m〇N cut winter air see area than P type gold Oxygen semi-electric 曰# two i-milk semi-transistors 3〇5a small, so that N-type full-type gold gas semi-transistor, as for interference (four) ^ ^ electricity day and day in the electrostatic discharge process is not in addition,: ί Electric crystal of the closed electric castle. Right brother two electric circuit 303 electrical connection 夕 wear pad 307 electrical connection ♦ connection brother a voltage is different from 埤 & in this embodiment, the first

The voltage of the connection can be plugged into two: the oxygen port The gate of the body 304a is used to prevent leakage current. The milk, Fig. 3C, shows the electrostatic discharge prevention and reinforcement of another embodiment of the present invention. Please refer to FIG. 3A, the fish 圄 θ θ 静电 静电 了 了 了 黑 黑 黑 黑 黑 黑 黑 黑 黑 黑 黑 黑 黑 黑 广 广 广 广 广 广 广 广 广 广 = = = = = = = = = = 拾 拾 拾 拾 拾The first and second source/drain electrodes of the type MOS semi-transistor eight P-type MOS transistor 311a are not connected to the input terminal of the system voltage rail VDD and the inverted $3〇9, and the pi monoxide half The gate of the turtle day body 311a is connected to the fourth conductive path 31〇. In the present embodiment, the fourth conductive path 31 〇 may be a second voltage trajectory for providing a second voltage to the gate of the P-type MOS transistor 311 & P-type MOS transistor 3ila Turn on. Therefore, in the non-electrostatic discharge protection mode, the P-type MOS transistor 3111a is turned on to provide a high-level signal to the input terminal of the inverter 309, thereby clamping the gate of the n-type MOS transistor 3〇4a. Voltage. In another embodiment of the invention, the gate voltage of the N-type MOS transistor 304a can be picked up using only one set of pick-up voltage modules 3A. 14 200840016 uyouui 23508twf.doc/n As illustrated in the above embodiment of FIG. 3A, FIG. 4 is an alternative embodiment of the debt testing module 3〇6 of FIG. 3A. For the main handle Mingshi Shishi, including the electric and the resistance 4 4, the two ends respectively, a conductive path 3〇1 and;;: brother one ^, the second end of the resistor 402 _ second (four) _ =

The node Α _ to the ESD protection in the module section is as illustrated in Fig. 3A of the above embodiment, and Fig. 5A illustrates another implementation circuit of the voltage module 3 〇 5 of (4) in Fig. 3A. 'Main two = A type, the module 3 〇 5 includes N-type MOS semi-transistor:, the first -, the second transistor 5 〇 2 'where N-type MOS semi-transistor 501 a lead circuit ^ and the pole The occupational electrostatic discharge protection unit and the first temple private path 302. The P-type MOS transistor 5 〇 2 has a pole and a gate _ a third conductive path tear, a body 5 〇 1 gate and a second conductive path 3 〇 2 . I milk + ^ 曰 side embodiment FIG. 3A "Description, FIG. 5B shows another implementation circuit of the _ " pickup voltage module 305 of the present invention. Please refer to Tudi's pick-up voltage module 305 including N-type MOS semi-transistor 5〇3: the first and second source/drain of the MOS semi-transistor 5〇3: coupled static, the electric protection unit 304 And the second conductive path 3〇2, and the first end and the second end of the electric household 4 respectively connect the third conductive path go] and the gate of the N-type MOS transistor 5〇3. The value is that the electrostatic discharge protection unit 3〇4 in the above embodiment is implemented by an N-type gold oxide semi-electrode. It should be known to those skilled in the art of sheds of the present invention that they can also be implemented using p-gold oxide semi-transistors, and another embodiment will be given in the field of 15 200840016 υ^ουυι 23508twf.d〇c/n. The knowledgeable person can easily implement the present invention. Figure 6A is a diagram showing an electrostatic discharge protection device according to another embodiment of the present invention. Referring to FIG. 6A, the ESD protection device includes a P-type MOS transistor 604a, a detection module 606, and a clamping voltage module 〇5. The p-type: the first and second source/drain electrodes of the oxygen semiconductor 604a are respectively coupled to the first conductive circuit bit 601 and the first conductive path 602 for conducting electrostatic current to the first conductive in the electrostatic discharge protection mode. The path 601 is between the second conductive path & The detecting module 606 is coupled between the first conductive path 601 and the second conductive circuit guard 602, and the detecting module 6〇6 includes a capacitor 606a, a resistor 606b, and an inverter 606c. . The voltage module 605 includes a P-type MOS transistor, wherein the first and second sources of the P-type MOS transistor 6 〇 5a respectively consume the gate of the p-type MOS transistor 604a. And a first conductive path, and the gate of the p-type MOS transistor 605a is coupled to the third conductive path 6〇3. When the high voltage of the electrostatic discharge enters from the bonding pad 6G7 (for example, the input pad or the output pad), the detecting module 6〇6 provides a bias voltage to the gate of the p-type MOS transistor 6〇4a. The p-type MOS transistor 6〇4a is turned on, and the ESD current is guided to the first-conducting path (for example, the system voltage line VDDWX is quietly escaping current ^^ circuit _. In this embodiment The third conductive path 〇3 may be a first voltage trajectory for providing a first voltage to the P-type MOS transistor 503a. Therefore, under the non-electrostatic discharge anti-shock mode, the gate voltage of the p-type MOS transistor is boosted by the P-type MOS transistor, so as to avoid the occurrence of leakage current. 6B illustrates an electrostatic discharge protection device according to an embodiment of the present invention. Referring to FIG. 6A and FIG. 6B, FIG. 6B differs from FIG. 6A in that another pickup voltage module 611 is used to clamp the P-type gold. The gate voltage of the oxygen semiconductor 604a. The pickup voltage module 611 includes an N-type MOS transistor 611a, wherein the N-type gold oxide half The first and second source/drain electrodes and the gate of the transistor 611a are respectively coupled to the ground voltage rail VSS, the input end of the inverter 606c, and the fourth conductive path 610. In this embodiment, the fourth conductive path 610 It may be a second voltage rail 'to provide a second voltage to the gate of the N-type MOS transistor 611a, so that the N-type MOS transistor 6iia is turned on. Therefore, the pass-through is performed in the non-electrostatic discharge protection mode. The N-type MOS transistor 611a provides a low-level signal to the input terminal of the inverter 6〇6c, thereby pulling up the gate voltage of the p-type MOS transistor 604a to make the P-type MOS transistor. 6〇 does not conduct to prevent leakage current. In another embodiment of the invention, only one set of pick-up voltage modules 611 can be used to plug the gate voltage of the p-type MOS transistor 604a. FIG. 7 illustrates another implementation circuit of the detection voltage module 6〇6 of FIG. 6A according to an embodiment of the present invention. Referring to FIG. 7, the detection module 606 includes a resistor 7〇1 and The capacitor 7〇2, wherein the first end and the second end of the resistor 7〇1 are connected to the first conductive path _ and the capacitor 〇2 First, the second end face of the electrical junction 7〇2 is connected to the second conductive path. The detection module 606(10) node B_ to the electrostatic discharge protection unit 6〇4. 17 200840016 096001 23508tw£doc/n FIG. 6A is an illustration of another implementation circuit of the technical power module 6〇5 of FIG. 6A for each embodiment of the present invention. The main body is shown in FIG. 8A, and the technical group 6 () 5 The invention comprises a p-type MOS transistor, a MOS transistor 802 ′, wherein the P-type MOS transistor 801, the first source, the drain source are respectively coupled to the electrostatic discharge protection unit 604 and the skirt-conductive path 602 . The _th pole and the gate of the N-type MOS transistor 8 〇 2 are connected to the third conductive path 6G3, and the p-type is the gate of the body 801 and the first conductive path 6〇2. Hong Ri Ri The above embodiment is illustrated in Fig. 6A, and Fig. 8B shows another implementation circuit of the detected voltage module 6〇5 in Fig. 6A. To the day of the fire ^ = t voltage module 6G5 includes p-type gold oxide semi-transistor two or two private resistance 804. P-type MOS semi-transistor 8〇3 of the first -, do not engage in static electricity and anti-material element 6G4 shirt - guide Wei 彳 804 the first end and the second end respectively face the third conductive and electricity

The gate of the type MOS transistor 803. In summary, the electrostatic plugging voltage module of the embodiment of the present invention has an electrostatic discharge prevention function for use, and has an electrostatic discharge protection function: the full electric crystal is not used. Avoid leakage currents. In addition: under the financial crystal crystal can also have the electrostatic discharge protection of the gold oxygen: 2 protection mode electrostatic discharge current. The present invention has been disclosed in the preferred embodiments as described above, and the present invention is not limited to the spirit and scope of the present invention. The two changes and the decoration, 18 200840016 uyouui 23508twf.doc / n The scope of protection of the present invention is therefore subject to the appended claims. T month to find profit and sufficiency [Simplified description of the figure] Figure 1 shows the gate-grounded 金 type MOS electric discharge device. Figure 9Α shows the electrostatic discharge using the surface trigger technology. Figure 2Β shows the electrostatic discharge protection of Figure 2 and the clothing. the way. Another type of coupling FIG. 3 is not an electrostatic discharge of the rabbit according to an embodiment of the present invention. FIG. 3 is a diagram showing the static electricity in FIG. Electric Protection Unit - Another Embodiment of the Electrostatic Rose Protection Agriculture of the Embodiment FIG. 3C is not the present invention. Another type of Figure 4 is a circuit for implementing the detection module of Figure 3 in accordance with an embodiment of the present invention. Figure 5A of a voltage module illustrates another embodiment of the implementation of the embodiment of the present invention. FIG. 5 is a schematic diagram of an implementation circuit of the pickup voltage in FIG. 3 according to an embodiment of the present invention. '' 】 Force. Figure 6A illustrates an electrostatic discharge protection device in accordance with one embodiment of the present invention. FIG. 6B illustrates an electrostatic discharge protection according to an embodiment of the present invention. 19 200840016 096001 23508 twf.doc/n FIG. 7 illustrates another implementation circuit of the detection module of FIG. 6A according to an embodiment of the present invention. FIG. 8A illustrates another implementation circuit of the plug voltage module of FIG. 6A according to an embodiment of the present invention. FIG. 8B illustrates another implementation circuit of the plug voltage module of FIG. 6A according to an embodiment of the present invention. [Description of main component symbols] VDD: system voltage rail VSS: ground voltage rails 101, 201, 209, 307, 607 · pads 102, 202, 308, 608: core circuits 103, 203, 208b, 304a, 304b , 304c, 305a, 306d, 501, 503, 611a, 802: N-type gold oxide semi-transistor

208a, 306c, 311a, 502, 604a, 605a, 801, 803: P-type MOS transistors 206, 306a, 402, 504, 606b, 701, 804: resistors 207, 306b, 401, 606a, 702 · capacitor 301, 601: first conductive path 302, 602: second conductive path 303, 603: third conductive path 304, 604: electrostatic discharge protection unit 305, 311, 605, 611: plug voltage module 306, 606: Detect Modules 309, 606c: inverters 310, 610: fourth conductive path 20

Claims (1)

200840016 096001 23508tw£doc/n X. Patent application scope: 1.: Electrostatic discharge protection device, including: / a first Meng oxygen semi-transistor, its first source / no pole connection - road control 'the second The source is extremely reduced. The second conductive circuit is used. Conductive=protective mode conducts static electricity between the first and the first guiding path; ,, a conductive secret, the first conductive impurity and the electrostatic discharge protection mode. Providing - biasing to; ^ _ 'to make the first recording semi-transistor turned on, · and Meng the first - golden oxygen semi-electric = static private anti-turf type under the non-conducting. The gate electrode is repeatedly used to make the first-gold oxide semi-transistor 2. If the patent application is turned over, the test module includes: ^ the package is placed in the county, and the second end is coupled to the first conductive path; The second end of the first-resistor is in an inverted state, and the input end of the first-side resistor is coupled to the output terminal to lightly connect the gate of the first-thick oxygen-oxygen transistor to know that the input package is the same as the patent scope of the application. The electrostatic discharge protection device according to the second item, the second plug voltage module, the complex voltage, the voltage, so that the first money m does not fall under the control system, the input end of the inverter is not transparent. . The electrostatic discharge protection device of claim 2, wherein the plug voltage module is coupled to the wheel end of the inverter. 5. The electrostatic discharge protection device of claim 1, wherein the detection module comprises: a first electric gate, the first end of which is connected to the first conductive path; and a first resistor, the first of which The end is coupled to the second end of the _ capacitor, and the second end is connected to the second conductive path; An inverter has an input end coupled to the second end of the first capacitor, and an output end coupled to the gate of the first MOS transistor. 6. The electrostatic discharge protection device of claim 5, further comprising: a second clamp voltage module coupled to the input end of the inverter for use in a non-electrostatic discharge protection mode The input terminal voltage of the inverter is depressed to make the first MOS transistor not conductive. 7. The electrostatic discharge protection device of claim 5, wherein the plug voltage module is coupled to the wheel end of the inverter. The electrostatic discharge protection device described in the first paragraph of the bean patent range, the eight rtn stamper is connected to the gate of the first-thick oxygen-oxide semi-transistor. (4) The static electricity discharge protection device mentioned in 1 item, the end cake and the second capacitor 'the first end of the terminal' are connected to the first conductive path, · ^第__, the secret of the gold oxide semi-transistor; and /, brother - The first-side resistor, the first end of the first-capacitor, the second end of the capacitor, is coupled to the second conductive path. 10. The device of claim 1, wherein the detecting module comprises: a first resistor, the first end of which is coupled to the first conductive a second end coupled to the gate of the first MOS transistor; and a first capacitor having a first end coupled to the second end of the first resistor and a second end coupled to the second end Conductive path. 11. The electrostatic discharge protection device of claim 1, wherein the plug voltage module comprises: a second MOS transistor, the first source/drain is coupled to the first oxy-half The gate of the transistor has a second source/drain coupled to the first conductive path and a gate coupled to a third conductive path. 12. The electrostatic discharge protection device of claim 1, wherein the plug voltage module comprises: a second MOS transistor, the first source/drain is coupled to the first oxy-half The gate of the transistor has a second source/drain coupled to the second conductive path and a gate coupled to a third conductive path. 13. The electrostatic discharge protection device of claim 1, wherein the plug voltage module comprises: a second MOS transistor, the first source/drain is coupled to the first oxy-half half The gate of the transistor, the second source and the pole of the transistor are connected to the circuit control of the brother, and a third gold oxide semi-transistor, the first source/drain is coupled to a third conductive path, and the second source thereof The gate is coupled to the gate of the second MOS transistor, and the gate is coupled to the first conductive path. 23 200840016 wuul/i· 23508twf.doc/n 14. As described in the scope of application of the scope of the patent item i, wherein the plug-in voltage module includes · rabbits, several electricians, a second gold-oxygen and semi-electric The crystal, the gate of the first source/drain-coupled half-transistor's second source/not very secret--interest;, - the third gold-oxygen semi-transistor, its first-source/no-pole, the way from The nth_the second gold-oxygen half-electric B-day _$ guiding gate is coupled to the second conductive path. Body style, ^ 15. If you apply for patent scope! The static voltage device, wherein the voltage voltage module comprises: a second metal oxide semi-transistor, the first -= the gate of the transistor 'the second lion coupled to the: a second resistor coupled to the first end of the second resistor is coupled to the gate of the second MOS transistor. Pavement, the first nest = as described in the scope of claim i, the plug-in voltage module includes:: electric protection - the second gold-oxygen semi-transistor, the first - to: the transistor _ a second resistor of the second pole (four) gold oxide-second resistor, the first end of which is coupled to one end of the gate path of the second gold-oxygen semiconductor transistor, and the second 17th of which is set forth in claim i, wherein The first I/I electrostatic discharge protection device path is a system voltage line. The electrostatic discharge protection device of claim 1, wherein the first conductive path is coupled to an input pad. 19. The ESD protection device of claim 1, wherein the first conductive path is coupled to an output pad. 20. The ESD protection device of claim 1, wherein the second conductive path is a ground voltage trajectory. 21. The ESD protection device of claim 1, wherein the second conductive path is coupled to an input pad. 22. The ESD protection device of claim 1, wherein the second conductive path is coupled to an output pad. 23. The ESD protection device of claim 1, wherein the third conductive path is a first voltage rail. 25