TWI341122B - Image sensor with active reset and randomly addressable pixels - Google Patents

Image sensor with active reset and randomly addressable pixels

Info

Publication number
TWI341122B
TWI341122B TW093106174A TW93106174A TWI341122B TW I341122 B TWI341122 B TW I341122B TW 093106174 A TW093106174 A TW 093106174A TW 93106174 A TW93106174 A TW 93106174A TW I341122 B TWI341122 B TW I341122B
Authority
TW
Taiwan
Prior art keywords
image sensor
addressable pixels
active reset
randomly addressable
randomly
Prior art date
Application number
TW093106174A
Other languages
English (en)
Chinese (zh)
Other versions
TW200507631A (en
Inventor
Boyd Fowler
Original Assignee
Aptina Imaging Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aptina Imaging Corp filed Critical Aptina Imaging Corp
Publication of TW200507631A publication Critical patent/TW200507631A/zh
Application granted granted Critical
Publication of TWI341122B publication Critical patent/TWI341122B/zh

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW093106174A 2003-08-11 2004-03-09 Image sensor with active reset and randomly addressable pixels TWI341122B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/639,227 US7274397B2 (en) 2003-08-11 2003-08-11 Image sensor with active reset and randomly addressable pixels

Publications (2)

Publication Number Publication Date
TW200507631A TW200507631A (en) 2005-02-16
TWI341122B true TWI341122B (en) 2011-04-21

Family

ID=33565227

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093106174A TWI341122B (en) 2003-08-11 2004-03-09 Image sensor with active reset and randomly addressable pixels

Country Status (6)

Country Link
US (1) US7274397B2 (enExample)
EP (1) EP1507406B1 (enExample)
JP (1) JP4487248B2 (enExample)
CN (1) CN100546337C (enExample)
DE (1) DE602004000375T2 (enExample)
TW (1) TWI341122B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060102827A1 (en) * 2004-11-17 2006-05-18 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device
US7728896B2 (en) * 2005-07-12 2010-06-01 Micron Technology, Inc. Dual conversion gain gate and capacitor and HDR combination
US20070024713A1 (en) * 2005-07-28 2007-02-01 Baer Richard L Imaging parallel interface RAM
US7750960B2 (en) * 2006-03-15 2010-07-06 Honeywell International Inc. System and apparatus for high dynamic range sensor
US20090040351A1 (en) * 2007-08-09 2009-02-12 Micron Technology, Inc. Method and apparatus for reducing noise in a pixel array
CN101877758B (zh) * 2009-04-28 2013-04-03 英属开曼群岛商恒景科技股份有限公司 影像传感器的读出系统及方法
JP5470181B2 (ja) * 2010-07-09 2014-04-16 パナソニック株式会社 固体撮像装置
JP5530277B2 (ja) 2010-07-09 2014-06-25 パナソニック株式会社 固体撮像装置およびその駆動方法
US8390712B2 (en) 2010-12-08 2013-03-05 Aptina Imaging Corporation Image sensing pixels with feedback loops for imaging systems
US20120242621A1 (en) * 2011-03-24 2012-09-27 Christopher James Brown Image sensor and display device incorporating the same
US8952729B2 (en) 2013-04-03 2015-02-10 BAE Systems Imaging Solutions Inc. Sample and hold circuit with reduced noise
US10079988B2 (en) * 2015-07-07 2018-09-18 Panasonic Intellectual Property Management Co., Ltd. Imaging device including pixel
US10789450B2 (en) 2017-10-20 2020-09-29 Synaptics Incorporated Optical biometric sensor with automatic gain and exposure control
US10531035B1 (en) 2018-07-17 2020-01-07 Semiconductor Components Industries, Llc Image sensors with predictive pre-charging circuitry
WO2021166584A1 (ja) 2020-02-18 2021-08-26 ヌヴォトンテクノロジージャパン株式会社 固体撮像装置、及びそれを用いる撮像装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6469740B1 (en) * 1997-02-04 2002-10-22 Matsushita Electric Industrial Co., Ltd. Physical quantity distribution sensor and method for driving the same
US6697111B1 (en) * 1998-04-08 2004-02-24 Ess Technology, Inc. Compact low-noise active pixel sensor with progressive row reset
US6587142B1 (en) * 1998-09-09 2003-07-01 Pictos Technologies, Inc. Low-noise active-pixel sensor for imaging arrays with high speed row reset
US6424375B1 (en) * 1999-09-21 2002-07-23 Pixel Devices, International Low noise active reset readout for image sensors
JP3984808B2 (ja) * 2000-09-07 2007-10-03 キヤノン株式会社 信号処理装置及びそれを用いた撮像装置並びに放射線撮像システム
DE60136963D1 (de) * 2000-11-16 2009-01-22 California Inst Of Techn Photodioden-cmos-abbildungsvorrichtung mit spaltenrückkopplungs-soft-reset
FR2825219B1 (fr) * 2001-05-28 2003-09-05 St Microelectronics Sa Pixel actif cmos a bruit reduit
US20030076431A1 (en) * 2001-10-24 2003-04-24 Krymski Alexander I. Image sensor with pixels having multiple capacitive storage elements
US6777660B1 (en) * 2002-02-04 2004-08-17 Smal Technologies CMOS active pixel with reset noise reduction
JP4132850B2 (ja) * 2002-02-06 2008-08-13 富士通株式会社 Ｃｍｏｓイメージセンサおよびその制御方法
US6919551B2 (en) * 2002-08-29 2005-07-19 Micron Technology Inc. Differential column readout scheme for CMOS APS pixels
US7215369B2 (en) * 2003-04-02 2007-05-08 Micron Technology, Inc. Compact pixel reset circuits using reversed current readout
US7280143B2 (en) * 2003-04-14 2007-10-09 Micron Technology, Inc. CMOS image sensor with active reset and 4-transistor pixels
US7525586B2 (en) * 2003-05-12 2009-04-28 Altasens, Inc. Image sensor and method with multiple scanning modes
US20040227832A1 (en) * 2003-05-12 2004-11-18 Innovative Technology Licensing, Llc. Imaging system with individual pixel reset

Also Published As

Publication number Publication date
JP2005065270A (ja) 2005-03-10
JP4487248B2 (ja) 2010-06-23
CN100546337C (zh) 2009-09-30
EP1507406B1 (en) 2006-02-08
US20050036048A1 (en) 2005-02-17
DE602004000375T2 (de) 2006-10-19
DE602004000375D1 (de) 2006-04-20
TW200507631A (en) 2005-02-16
US7274397B2 (en) 2007-09-25
CN1581929A (zh) 2005-02-16
EP1507406A1 (en) 2005-02-16

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