TWI337381B - - Google Patents

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Publication number
TWI337381B
TWI337381B TW094146478A TW94146478A TWI337381B TW I337381 B TWI337381 B TW I337381B TW 094146478 A TW094146478 A TW 094146478A TW 94146478 A TW94146478 A TW 94146478A TW I337381 B TWI337381 B TW I337381B
Authority
TW
Taiwan
Prior art keywords
gas
plasma
conductive
plate
electrode plate
Prior art date
Application number
TW094146478A
Other languages
English (en)
Chinese (zh)
Other versions
TW200725729A (en
Inventor
Wong Jerry
Wah Shan Mak Alfred
Wu Tzy-Chung
Singh Amar
Shin Gene
Can Linh
Pak Sam
Park Kon
Chinho Chang Christopher
Original Assignee
Engenuity Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Engenuity Systems Inc filed Critical Engenuity Systems Inc
Priority to TW094146478A priority Critical patent/TW200725729A/zh
Priority to KR1020060132478A priority patent/KR100803825B1/ko
Publication of TW200725729A publication Critical patent/TW200725729A/zh
Application granted granted Critical
Publication of TWI337381B publication Critical patent/TWI337381B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW094146478A 2005-12-26 2005-12-26 Plasma etching system TW200725729A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW094146478A TW200725729A (en) 2005-12-26 2005-12-26 Plasma etching system
KR1020060132478A KR100803825B1 (ko) 2005-12-26 2006-12-22 플라즈마 식각 시스템

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094146478A TW200725729A (en) 2005-12-26 2005-12-26 Plasma etching system

Publications (2)

Publication Number Publication Date
TW200725729A TW200725729A (en) 2007-07-01
TWI337381B true TWI337381B (enExample) 2011-02-11

Family

ID=38366723

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094146478A TW200725729A (en) 2005-12-26 2005-12-26 Plasma etching system

Country Status (2)

Country Link
KR (1) KR100803825B1 (enExample)
TW (1) TW200725729A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI747998B (zh) * 2016-11-18 2021-12-01 美商帕斯馬舍門有限責任公司 離子過濾器

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5759718B2 (ja) * 2010-12-27 2015-08-05 東京エレクトロン株式会社 プラズマ処理装置
CN111599720A (zh) * 2020-05-25 2020-08-28 上海华力集成电路制造有限公司 一种气体分配器
CN115410893A (zh) * 2022-09-28 2022-11-29 北京金派尔电子技术开发有限公司 干法刻蚀装置和方法
CN116453930B (zh) * 2023-04-27 2024-01-02 上海稷以科技有限公司 一种自检式芯片刻蚀用等离子体清洗去胶设备

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4482308B2 (ja) * 2002-11-26 2010-06-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI747998B (zh) * 2016-11-18 2021-12-01 美商帕斯馬舍門有限責任公司 離子過濾器

Also Published As

Publication number Publication date
TW200725729A (en) 2007-07-01
KR100803825B1 (ko) 2008-02-14
KR20070068272A (ko) 2007-06-29

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees