KR100803825B1 - 플라즈마 식각 시스템 - Google Patents

플라즈마 식각 시스템 Download PDF

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Publication number
KR100803825B1
KR100803825B1 KR1020060132478A KR20060132478A KR100803825B1 KR 100803825 B1 KR100803825 B1 KR 100803825B1 KR 1020060132478 A KR1020060132478 A KR 1020060132478A KR 20060132478 A KR20060132478 A KR 20060132478A KR 100803825 B1 KR100803825 B1 KR 100803825B1
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KR
South Korea
Prior art keywords
plasma
gas
substrate
conductor plate
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020060132478A
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English (en)
Korean (ko)
Other versions
KR20070068272A (ko
Inventor
제리 왕
알프레드 마크와산
찌청 유
샘 박
린흐 칸
신게네
아마르 싱흐
콘 박
친호 크리스토퍼 창
Original Assignee
엔지뉴어티 시스템즈 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR20070068272A publication Critical patent/KR20070068272A/ko
Application granted granted Critical
Publication of KR100803825B1 publication Critical patent/KR100803825B1/ko
Assigned to 지후 에너지 이큅먼트 리미티드 reassignment 지후 에너지 이큅먼트 리미티드 권리의 전부이전등록 Assignors: 엔지뉴어티 시스템즈 인코포레이티드
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020060132478A 2005-12-26 2006-12-22 플라즈마 식각 시스템 Expired - Fee Related KR100803825B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW094146478A TW200725729A (en) 2005-12-26 2005-12-26 Plasma etching system
TW094146478 2005-12-26

Publications (2)

Publication Number Publication Date
KR20070068272A KR20070068272A (ko) 2007-06-29
KR100803825B1 true KR100803825B1 (ko) 2008-02-14

Family

ID=38366723

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060132478A Expired - Fee Related KR100803825B1 (ko) 2005-12-26 2006-12-22 플라즈마 식각 시스템

Country Status (2)

Country Link
KR (1) KR100803825B1 (enExample)
TW (1) TW200725729A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5759718B2 (ja) * 2010-12-27 2015-08-05 東京エレクトロン株式会社 プラズマ処理装置
TWI747998B (zh) * 2016-11-18 2021-12-01 美商帕斯馬舍門有限責任公司 離子過濾器
CN111599720A (zh) * 2020-05-25 2020-08-28 上海华力集成电路制造有限公司 一种气体分配器
CN115410893A (zh) * 2022-09-28 2022-11-29 北京金派尔电子技术开发有限公司 干法刻蚀装置和方法
CN116453930B (zh) * 2023-04-27 2024-01-02 上海稷以科技有限公司 一种自检式芯片刻蚀用等离子体清洗去胶设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050086830A (ko) * 2002-11-26 2005-08-30 동경 엘렉트론 주식회사 플라즈마 처리 장치 및 방법 그리고 플라즈마 생성용전극판

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050086830A (ko) * 2002-11-26 2005-08-30 동경 엘렉트론 주식회사 플라즈마 처리 장치 및 방법 그리고 플라즈마 생성용전극판

Also Published As

Publication number Publication date
TW200725729A (en) 2007-07-01
TWI337381B (enExample) 2011-02-11
KR20070068272A (ko) 2007-06-29

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