TWI334196B - Method of manufacturing cmos devices by the implantation of n- and p- cluster ions and negative ions - Google Patents

Method of manufacturing cmos devices by the implantation of n- and p- cluster ions and negative ions Download PDF

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Publication number
TWI334196B
TWI334196B TW096109576A TW96109576A TWI334196B TW I334196 B TWI334196 B TW I334196B TW 096109576 A TW096109576 A TW 096109576A TW 96109576 A TW96109576 A TW 96109576A TW I334196 B TWI334196 B TW I334196B
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TW
Taiwan
Prior art keywords
ion
substrate
semiconductor device
type
energy
Prior art date
Application number
TW096109576A
Other languages
English (en)
Chinese (zh)
Other versions
TW200739821A (en
Inventor
N Horsky Thomas
C Jacobson Dale
A Krull Wade
Original Assignee
Semequip Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/251,491 external-priority patent/US20040002202A1/en
Application filed by Semequip Inc filed Critical Semequip Inc
Publication of TW200739821A publication Critical patent/TW200739821A/zh
Application granted granted Critical
Publication of TWI334196B publication Critical patent/TWI334196B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26566—Bombardment with radiation with high-energy radiation producing ion implantation of a cluster, e.g. using a gas cluster ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H01L21/423—Bombardment with radiation with high-energy radiation
    • H01L21/425—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electron Sources, Ion Sources (AREA)
TW096109576A 2002-06-26 2003-06-25 Method of manufacturing cmos devices by the implantation of n- and p- cluster ions and negative ions TWI334196B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US39227102P 2002-06-26 2002-06-26
US39184702P 2002-06-26 2002-06-26
US10/251,491 US20040002202A1 (en) 2002-06-26 2002-09-20 Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions

Publications (2)

Publication Number Publication Date
TW200739821A TW200739821A (en) 2007-10-16
TWI334196B true TWI334196B (en) 2010-12-01

Family

ID=43048137

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096109576A TWI334196B (en) 2002-06-26 2003-06-25 Method of manufacturing cmos devices by the implantation of n- and p- cluster ions and negative ions

Country Status (3)

Country Link
JP (2) JP4744141B2 (ja)
CN (1) CN101908473B (ja)
TW (1) TWI334196B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5591470B2 (ja) * 2005-08-30 2014-09-17 アドバンスト テクノロジー マテリアルズ，インコーポレイテッド 代替フッ化ホウ素前駆体を使用するホウ素イオン注入および注入のための大きな水素化ホウ素の形成
US7666771B2 (en) * 2005-12-09 2010-02-23 Semequip, Inc. System and method for the manufacture of semiconductor devices by the implantation of carbon clusters
US7435971B2 (en) * 2006-05-19 2008-10-14 Axcelis Technologies, Inc. Ion source
US7507978B2 (en) * 2006-09-29 2009-03-24 Axcelis Technologies, Inc. Beam line architecture for ion implanter
WO2010019584A1 (en) * 2008-08-11 2010-02-18 Ion Beam Applications S.A. High-current dc proton accelerator
US10597773B2 (en) * 2017-08-22 2020-03-24 Praxair Technology, Inc. Antimony-containing materials for ion implantation
US10535499B2 (en) * 2017-11-03 2020-01-14 Varian Semiconductor Equipment Associates, Inc. Varied component density for thermal isolation

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2475069A1 (fr) * 1980-02-01 1981-08-07 Commissariat Energie Atomique Procede de dopage rapide de semi-conducteurs
JPS6074515A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd 半導体装置の製造方法
JPH01225117A (ja) * 1988-03-04 1989-09-08 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法及びその製造装置
JPH05251378A (ja) * 1992-03-05 1993-09-28 Fujitsu Ltd 半導体装置の製造方法
JP2919254B2 (ja) * 1993-11-22 1999-07-12 日本電気株式会社 半導体装置の製造方法および形成装置
JPH0817376A (ja) * 1994-07-01 1996-01-19 Mitsubishi Electric Corp イオン源およびイオン注入装置
JPH0917884A (ja) * 1995-06-26 1997-01-17 Ricoh Co Ltd 半導体装置の製造方法
JPH0941138A (ja) * 1995-07-31 1997-02-10 Res Dev Corp Of Japan ガスクラスターイオンビームによるイオン注入法
JP3749924B2 (ja) * 1996-12-03 2006-03-01 富士通株式会社 イオン注入方法および半導体装置の製造方法
GB9726191D0 (en) * 1997-12-11 1998-02-11 Philips Electronics Nv Ion implantation process
US6093594A (en) * 1998-04-29 2000-07-25 Advanced Micro Devices, Inc. CMOS optimization method utilizing sacrificial sidewall spacer
US6191012B1 (en) * 1998-12-03 2001-02-20 Advanced Micro Devices Method for forming a shallow junction in a semiconductor device using antimony dimer
WO2001043157A1 (en) * 1999-12-13 2001-06-14 Semequip, Inc. Ion implantation ion source, system and method
AU2001266847A1 (en) * 2000-11-30 2002-06-11 Semequip, Inc. Ion implantation system and control method
US6479828B2 (en) * 2000-12-15 2002-11-12 Axcelis Tech Inc Method and system for icosaborane implantation

Also Published As

Publication number Publication date
CN101908473A (zh) 2010-12-08
CN101908473B (zh) 2013-03-13
JP4744141B2 (ja) 2011-08-10
JP2010232668A (ja) 2010-10-14
JP2005531156A (ja) 2005-10-13
TW200739821A (en) 2007-10-16

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