TWI324284B - - Google Patents

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Publication number
TWI324284B
TWI324284B TW095137694A TW95137694A TWI324284B TW I324284 B TWI324284 B TW I324284B TW 095137694 A TW095137694 A TW 095137694A TW 95137694 A TW95137694 A TW 95137694A TW I324284 B TWI324284 B TW I324284B
Authority
TW
Taiwan
Prior art keywords
substrate
light
moving
irradiation
laser light
Prior art date
Application number
TW095137694A
Other languages
English (en)
Chinese (zh)
Other versions
TW200719102A (en
Original Assignee
Orc Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Orc Mfg Co Ltd filed Critical Orc Mfg Co Ltd
Publication of TW200719102A publication Critical patent/TW200719102A/zh
Application granted granted Critical
Publication of TWI324284B publication Critical patent/TWI324284B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW095137694A 2005-11-04 2006-10-13 Laser beam/uv irradiation peripheral exposure apparatus, and method therefor TW200719102A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005321256 2005-11-04
JP2006246265A JP4491444B2 (ja) 2005-11-04 2006-09-12 レーザビーム・紫外線照射周辺露光装置およびその方法

Publications (2)

Publication Number Publication Date
TW200719102A TW200719102A (en) 2007-05-16
TWI324284B true TWI324284B (ja) 2010-05-01

Family

ID=38209772

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095137694A TW200719102A (en) 2005-11-04 2006-10-13 Laser beam/uv irradiation peripheral exposure apparatus, and method therefor

Country Status (3)

Country Link
JP (1) JP4491444B2 (ja)
KR (1) KR100947079B1 (ja)
TW (1) TW200719102A (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011013512A (ja) * 2009-07-03 2011-01-20 Orc Manufacturing Co Ltd 周辺露光装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294500A (ja) * 1999-04-09 2000-10-20 Nikon Corp 周辺露光装置及び方法
JP2000294501A (ja) * 1999-04-09 2000-10-20 Nikon Corp 周辺露光装置及び方法
JP3091460B1 (ja) * 1999-12-10 2000-09-25 東レエンジニアリング株式会社 露光装置
JP4342663B2 (ja) * 1999-12-20 2009-10-14 株式会社オーク製作所 周辺露光装置
JP2001201862A (ja) * 2000-01-19 2001-07-27 Nikon Corp 周辺露光装置
JP3321733B2 (ja) * 2000-09-20 2002-09-09 東レエンジニアリング株式会社 露光装置
JP2002223072A (ja) 2001-01-24 2002-08-09 Matsushita Electric Ind Co Ltd 多層プリント配線板の製造方法およびその製造装置
JP2002365811A (ja) * 2001-06-08 2002-12-18 Mitsubishi Corp フォトレジスト塗布基板の露光方法及び装置
JP3547418B2 (ja) * 2001-10-25 2004-07-28 三菱商事株式会社 レーザビームによる液晶パネルのマーキング方法及び装置
JP4014031B2 (ja) 2002-06-05 2007-11-28 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP4664102B2 (ja) * 2005-03-18 2011-04-06 東レエンジニアリング株式会社 露光装置及び露光方法

Also Published As

Publication number Publication date
KR100947079B1 (ko) 2010-03-10
JP2007148358A (ja) 2007-06-14
KR20070048612A (ko) 2007-05-09
JP4491444B2 (ja) 2010-06-30
TW200719102A (en) 2007-05-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees