TW550668B - Stage apparatus, exposure system and device production method - Google Patents

Stage apparatus, exposure system and device production method Download PDF

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Publication number
TW550668B
TW550668B TW091116668A TW91116668A TW550668B TW 550668 B TW550668 B TW 550668B TW 091116668 A TW091116668 A TW 091116668A TW 91116668 A TW91116668 A TW 91116668A TW 550668 B TW550668 B TW 550668B
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TW
Taiwan
Prior art keywords
stage
wafer
exposure
substrate
movement
Prior art date
Application number
TW091116668A
Other languages
Chinese (zh)
Inventor
Masahiko Okumura
Tetsuya Hirano
Original Assignee
Nikon Corp
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Publication of TW550668B publication Critical patent/TW550668B/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

This invention is to maintain high throughput in an exposure process and achieve the accuracy required by an operation performed through two stages. A stage control system19 while restricting a reduction in a control performance in one stage when an exposure operation is performed in that stage WST1, performs an alignment operation in the other stage WST2, thereby restricting the reduction in a control performance in one-stage exposure operation caused by an operation in the other stage. Accordingly, simultaneous parallel processings in two stages can positively attain the accuracy required by an operation performed in each stage while keeping high throughput in an exposure process.

Description

A7 550668 五、發明說明（/ ) [技術領域] (請先閱讀背面之注意事項再填寫本頁) 本發明係有關於載台裝置、曝光裝置及元件製造方法 ，更詳而言之，係具有獨立且沿著載台平台士的導引面而 可2維移動的複數之載台之載台裝置、備有該載台裝置之 曝光掃描方式之曝光裝置、及使用該曝光裝置而進行曝光 之元件製造方法。 [習知技術] --線 一直以來’用以製造半導体元件、液晶顯示元件等之 微影製程中，係使用透過投影光學系統將形成於光罩或標 線片（以下’稱「標線片」）的圖案，予以轉印至塗佈有光 阻等的晶圓或玻璃基板等的基板（以下，稱「晶圓」）上之 曝光裝置。近年來，隨著半導体元件的高度積體化，步進 重覆方式的縮小投影曝光裝置（所謂的步進器），或改良該 步進器而具有步進掃描方式的掃描型投影曝光裝置(所謂的 掃描步進器)等之逐次移動型的投影曝光裝置己成爲主流技 習知之投影曝光裝置，係對載放於可XY驅動的載台 上的晶圓進行曝光，曝光動作結束後，即進行晶圓交換、 晶圓對準((搜尋對準)及精細對準），接著進行曝光、然後再 進行晶圓交換等，重複進行如此之3大動作。因此，晶圓 換、對準所需時間（以下，爲方便起見，稱「準備 ^ (overhead)時間」），係造成裝置之生產率下降的原因。 近來，提出了多個提案(例如，參照特開平8-51069號 公報及W098/24115號公報），其係爲了抑制該生產率的下 ____ 3 __________ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 550668 五、發明說明（）） 降’採用在1台曝光裝置內分別各設置2個作爲標記檢測 系統的對準檢測系統、及載台的裝置構成，其順序，係在 一個載台上的晶圓曝光中，在另一個載台上進行晶圓交換 、對準’當一個載台上的晶圓曝光結束後，即快速地對另 一個載台上的晶圓進行曝光之同時並行處理，以提昇裝置 生產率之複數個載台的技術。 此處’對於使用習知之雙晶圓載台（兩晶圓載台）型之 掃描步進器中的2個載台之並行處理時的移動動作例，使 用圖12(A)〜圖12(c)作簡單說明。圖12(A)中，顯示了有 關進行曝光(掃描曝光)動作之一載台的掃描方向（掃描方向） 之速度變化’圖12(B)係顯示一載台的步進方向（非掃描曝 光）的速度變化，圖12(C)則顯示與上述一載台的動作並行 ，而進行例如特開昭61-44429號公報等所揭示之EGA方 式之晶圓kt準的另~^載台的速度變化。 此等圖中，t2、t4、t6的範圍，由圖12(A)、圖12(B) 可知’係一載台持續等速移動於掃描方向，同時對載放於 該載台上的晶圓進行曝光。與此並行的，另一載台係進行 對準拍攝間的載台的移動或對準拍攝區域中的標記檢測(觀 察)動作。此外，tl、t3、t5的範圍由圖12(A)、圖12(B)可 知，係進行一載台之曝光照射間的步進動作。與此並行的 ’另一載台則進行對準拍攝間的載台的移動或對準拍攝區 ;域中的標記檢測(觀察)動作。又，於該圖12(C)中，A:、A2 、A3所示之範圍，係表示進行另一載台上的對準拍攝區域 中的標記檢測(觀察)動作之範圍。又，於圖12(C)中，角度 ________4_______— 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ' ^ (請先閱讀背面之注意事項再填寫本頁) \\0J. -線 A7 550668 五、發明說明（；） (請先閱讀背面之注意事項再填寫本頁) a r係表示對應另一載台的加速度、此時係顯示對應最高加 速度(amax= tana r )之角度。 如前所述，以往，一載台及另一載台之移動動作(包括 靜止）的進行，並不特別考量其關係。此係因，就各個載台 而言，爲分別將生產率提昇至最大限，係以最高加速度及 最高速度來移動之故。 [發明欲解決之課題] 丨線 如上所述，使用習知之雙晶圓載台（兩晶圓載台）型的 掃描步進器中的2個載台的並行處理，並不考量一載台及 另一載台之移動關係（包括靜止）。因此，例如在對一載台 上的晶圓進行掃描曝光中，在另一載台上進行對準拍攝間 的載台移動等的情形下，因該另一載台之移動造成之振動 等千擾，將會透過載台或本体構造等傳遞至一載台，因此 ，有可能因此而導致要求較高精度的一載台之位置、速度 控制、甚至掃描曝光時標線片及晶圚的同步精度之惡化。 此外’特別是在以高推力的線性馬達作爲載台的驅動源時 ，由於上述另一載台移動時線性馬達的發熱，使載台週圍 的環境氣息(例如空氣）中產生溫度波動(空氣波動），且因該 空氣波動而可能導致測量上述一載台位置的雷射干涉器的 測量精度、甚至該一載台之位置控制精度產生惡化。 同樣地，與在另一載台上進行晶圓上的對準標記的檢 )測動作（觀察動作）並行，而在一載台側進行曝光照射間步 進時的移動動作時，亦無法否定有可能因一載台側的移動 動作使另一載台側的位置控制精度（此時係靜止精度）下降 _____5 ___ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ' " A7 550668 -------- --B7 __ 五、發明說明（0 ) 、對準測量精度下降。 土本發=有鑑於此，其第1目白勺，係提供一能一方讎 持充份的高生產率、一方面能達成各個載台所要求精度之 控制性能的載台裝置。 2外本發明之第2目的，係提供一能一方面維持充 ί刀的局生產率、一方面能達成各個載台所要求精度之控制 性能的曝光裝置。 此外，本發明之第3目的，係提供一能提昇元件之生 產性的元件製造方法。 [用以解決課題之手段] 申SR專利範圍申請專利範圍第1項之本發明，一 台裝置’其特徵在於，具備： μ 載台平台（12); 第1載台(WST1)及第2載台(WST2)，可沿前述載台平 台上之導引面（12a)獨立進行2維移動；以及 載台控制系統（19)，係控制前述兩載台並行之移動動 作且在使載台貫施要求既定精度以上之控制性能的第 1移動動作時，邊下達用以抑制前述一載台的前述控制性 能下降的限制要件，邊使另一載台實施第2移動動作。 根據此發明，載台控制系統在控制以第i及第2載台 並行之移動動作之際，使一載台實施要求既定精度以上之 控制性邊的弟r 1移動動作時，邊持續下達用以抑制一載台 控制性能降低的限制要件、邊使另一載台實施第2移動動 作。因此’能抑制因另一載台的第2移動動作而導致要求 — 6 t紙張尺度適用中國國家標準(CNS)A4規格（21〇 X 297公ϋ ' ' - --------------— (請先閱讀背面之注意事項再填寫本頁) 卜訂： -線 A7 550668 五、發明說明（t ) 既疋精度以上之控制性通的弟1移動動作中的控制性能降 低。此外，藉由使用兩個載台的同時並行處理，相較於僅 使用1個載台的情形能提昇處理能力。 因此，根據此發明，能一方面持續維持充份的高生產 率、方面遗達成各個載台所要求的精度之控制性能。 此日寸，作爲下達至另一載台的限制要件，有各種限制 要件。例如，申請專利範圍2之載台裝置，其下達至另一 載台的限制要件，可包含速度及加速度的至少一方的上限 値之限制，或如申請專利範圍3之載台裝置般，下達至另 一載台的限制要件，可包含速度及加速度之兩者的上限^ 之限制。 此外，上述申請專利範圍1〜3之各載台裝置，如申請 專利範圍4之載台裝置般，前述下達至另一載台的限制要 件，可包含視前述一載台的動作狀況，使前述另一載台進 行分割爲複數次的移動動作。 再者’申請專利範圍卜3之各載台裝置，如申請專利 範圍5 ^載台裝置般，前述下達至另一載台的限制要件， 可包含以等速移動來進行前述第2移動動作。 核申_欄11 6之載台難，其特徵在於，具備 載台平台（12); 第、1載台(WST1)及第2載台(WST2)，可沿前述載台平 台上之導引面（12a)獨立進行2維移動；以及 載台控制系統（19)，係控制前述兩載台並行之移動動 本紙張尺度適用中國國'家標¥7FNS)A4規格（210 x 297 ^爱^~ --------------裝------r ^ · κ I -------^- I - (請先閱讀背面之注意事項再填寫本頁) A7 550668 五、發明說明（έ ) 作，且在使一載台實施要求既定精度以上之控制性能的第 1移動動作時，邊將速度及加速度的至少一方的上限値之 限制下達至前述另一載台’且邊使其實施以非等速移動之 第2移動動作。 根據此發明，載台控制系統在控制以第1及第2載台 並行之移動動作之際’使一載台實施要求既定精度以上之 控制性能的第1移動動作時’係邊將速度及加速度的至少 一方的上限値之限制下達至前述另一載台，且邊使其實施 以非等速移動之第2移動動作。此時，由於係對另一載台 下達速度及加速度的至少一方的上限値之限制，故即使另 一載台以非等速移動，亦能抑制因另一載台的第2移動動 作而導致要求既定精度以上之控制性能的第1移動動作的 控制性能的降低。此外，藉由使用兩個載台的同時並行處 理，相較於僅使用1個載台的情形能提昇處理能力。 因此’根據此發明，能一方面維持充份的高生產率， 一方面達成各個載台所要求的精度之控制性能。 本發明申請專利範圍7之曝光裝置，係相對能量束 (IL)掃描基板(Wl、W2)同時進行曝光，據以在前述基板上 形成既定圖案，其特徵在於： 具備申請專利範圍1〜6中任一項之載台裝置； 前述第1移動動作，包含以前述能量束對前述一載台 上所衣載之第1基板(W1或W2)進行掃描曝光時之載台掃 描移動； 前述第2移動動作，包含使前述另一載台移動至期望 本紙張尺度適i中國國家標準（CNi^S721〇 x 297 ^爱)------^- (請先閱讀背面之注意事項再填寫本頁) 卜訂，_ |線' A7 550668 五、發明說明（7 ) 目標位置之移動動作。 根據此發明，由於具備申請專利範圍1〜6之各載台裝 置’因此在以載台控制系統，控制以第1及第2載台並行 之移動動作’作爲要求既定精度以上之控制性能的第1移 動動作，進行藉由能量束對一載台上裝載之第1基板進行 掃描曝光時的載台掃描移動，作爲第2移動動作進行使另 一載台移動至期望目標位置的移動動作。如此，申請專利 範圍1〜6之各載台裝置，能防止因另一載台的第2移動動 作而導致要求既定精度以上之控制性能的一載台的第1移 動動作的控制性能降低。因此，能抑制因使前述另一載台 移動至期望目標位置之移動動作而導致藉由能量束對第1 基板進行掃描曝光時之載台掃描移動的控制性能降低，據 此’能以良好之精度將既定圖案轉印至第1基板上。此情 形下’與依序進行基板交換、基板對準及掃描曝光之情形 相較’亦能藉由使用兩個載台的同時並行處理，維持高生 座丰0 此時，可如申請專利範圍8之曝光裝置般，進一步具 備用以檢測前述另一載台上所裝載之第2基板(W2或wi) 上所形成的複數標記.的標記檢測系統（ALG1、ALG2)，前 $期望目標位置’包含爲了以前述標記檢測系統檢測前述 。第2基板上的前述複數個標記之載台位置、自前述另一載 台上卸下前述第2基板的卸下位置、及用以在前述另一基 板上裝載新的基板的裝載位置之其中之一。 本發明申請專利範圍9之曝光裝置，係相對能量束掃 本紙張尺度適標準（CNS)A4規$咖χ 297 9— --- (請先閱讀背面之注意事項再填寫本頁) · 線- A7 550668 五、發明說明（δ ) 描基板同時進行曝光，據以在前述基板上形成既定圖案， 其特徵在於： 具備申請專利範圍6之載台裝置，以及用以檢測前述 一載台上所裝載之第1基板上形成之複數個標記的標記檢 測系統；前述第1移動動作，包含以前述標記檢測系統檢 測前述第1基板上的標記時，前述一載台之動作； 前述第2移動動作，包含以前述能量束對前述另一載 台上所裝載之第2基板上的複數個區劃區域進行掃描曝光 時’使下一區劃區域朝向前述能量束照射區域移動之前述 *·立一載台的移動動作。 據此’由於具備申請專利範圍6之各載台裝置，因此 在藉由載台控制系統，控制以第i及第2載台並行之移動 動作，作爲要求既定精度以上之控制性能的第1移動動作 ’在進行藉由標記檢測系統檢測第1基板上之標記(對準標 記）時一載台之動作(亦即靜止狀態維持動作）之際，作爲第 2移動動作藉由能量束對另一載台上所裝載之第2基板上 的複數個區劃區域進行曝光掃描之際，係進行使下個區劃 區域朝向前述能量束的照射區域移動之另一載台移動動作( 亦即曝光照射間步進時之移動動作）。如此，申請專利範圍 6之載台裝置，能防止因另一載台的第2移動動作而導致 要求既定精度以上之控制性能的一載台之第丨移動動作控 制性能降低。因此，能抑制因另一載台之曝光照射間步進 時之移動動作時其藉由標記檢測系統檢測第丨基板上的標 記（對準標記）時一載台之靜止狀態維持動作之精度降低， - -—_ _10_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） (請先閱讀背面之注意事項再填寫本頁) 訂· · .線- A7 550668 五、發明說明（？） 據此能提昇第2基板上的標記的檢測精度（對準測量精度) 。於此情形下，與依序進行基板交換、基板對準及掃描曝 光之情形銷較，亦能藉由兩個載台的同時並行處理，維持 高生產率。 申請專利範圍10之發明，其包含微影製程之元件製造 方法，其特徵在於： 前述微影製程係使用申請專利範圍7〜9項中任一項之 曝光裝置來進行曝光。 [圖式之簡單說明] 圖1，係顯示一實施形態之曝光裝置的槪略構成圖。 圖2，係顯示2個晶圓載台與標線片載台與投影光學 系統與2個對準光學系統之位置關係的立體圖。 圖3，係顯示2個晶圓載台及其驅動系統等的俯視圖 〇 圖4，係用以說明使用2個晶圓載台所進行之並行處 理動作之流程的圖。 圖5(A)，係顯示以交互掃描方式將圖案轉印至晶圓上 之順序的圖，圖5(B)，係顯示晶圓上形成之複數個對準標 記之位置之檢測順序的圖。 圖6(A)〜圖6(C)，係用以說明於圖4之時間T!進行 之第1方法的圖。 ) 圖7(A)〜圖7(C)，係用以說明於圖4之時間乃進行 之第2方法的圖。 圖8(A)〜圖8(C)，係用以說明於圖4之時間乃進行 _______π____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------^^.1 (請先閱讀背面之注意事項再填寫本頁) 卜訂· 550668 A7 B7 五、發明說明（ 之第3方法的圖。 圖9(A)〜圖9(C)，係用以說明於圖4之時間Ti進行 之第4方法的圖。 圖10，係顯示本發明之元件製造方法的流程圖。 圖11，係顯示圖10之步驟204之具体例的流程圖。 圖12(A)〜圖12(C)，係用以說明使用習知之雙晶圓載 台之掃描步進器中2個載台之並行處理時之載台移動動作 的圖。 [符號說明] --------------I (請先閱讀背面之注意事項再填寫本頁) 12 載台平台 12a 導引面 19 載台控制系統 50 載台裝置 100 曝光裝置 ALG1、 ALG2 對準系統(標記檢測系統) ΙΑ 曝光區域（照射區域） IL 照明用光(能量束） SA 曝光照射區域(區劃區域) W1、W2 晶圓(基板） WST1 晶圓載台(第1載台） WST2 晶圓載台(第2載台） 卜訂： 丨線- [發明之實施形態] 圖1，係顯示一實施形態之曝光裝置之槪略構成。該 曝光裝置100，係步進掃描方式之掃描曝光裝置，亦即係 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 550668 五、發明說明（"） 所謂的掃描步進器。 該曝光裝置100，具備··照明系統10，其係藉由作爲 能量束的照明用光IL來照明作爲光罩的標線片R ;標線片 驅動系統，主要驅動標線片R於既定掃描方向（本實施形態 中爲Y軸方向（圖1中垂直於紙面之方向））；投影光學系統 PL ’係配置於標線片R的下方；以及載台裝置50，係配置 於該投影光學系統PL的下方，且包含分別保持並可獨立2 維移動作爲基板的晶圓W1、晶圓W2的作爲第1載台的晶 圓載台WST1、及作爲第2載台的晶圓載台WST2。 前述照明系統10,係例如特開平6-349701號公報等 所揭示的’包含光源、含光學積分器(例如複眼透鏡或棒狀 積分器（內面反射型積分器)等）之照度均勻化光學系統、中 繼透鏡、可變ND濾光器、標線片遮簾、及分光鏡等(均未 圖示）而構成。該照明系統10，係藉由作爲能量束的照明 用光IL，以大致均勻的照度來照明描繪有電路圖案等的標 線片R上以標線片遮簾所規定的狹縫狀照明區域IAR(參照 圖2)部份。此處，作爲照明用光;[L，可使用ArF準分子雷 射光(波長193nm)、或F2雷射光(波長157nm)等的真空紫 外光等。 前述標線片驅動系統，具備：保持標線片R、能沿圖 1所示之標線片基盤32在XY2維面內移動之標線片載台 J RST，驅動該標線片載台RST之標線片驅動部30，及測量 標線片載台RST之位置的標線片干涉器系統36等。 前述該標線片載台RST，實際上，係具有：透過例如 _______13___ I紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)A7 550668 V. Description of the Invention (/) [Technical Field] (Please read the precautions on the back before filling out this page) The present invention relates to a stage device, an exposure device, and a method for manufacturing a component. More specifically, it has A plurality of stage devices independently, and capable of moving in two dimensions along the guide surface of the stage platform, an exposure device provided with the exposure scanning method of the stage device, and an exposure device using the exposure device Element manufacturing method. [Known technology] --Lines have been used in the lithography process used to manufacture semiconductor elements, liquid crystal display elements, etc., which are formed on a photomask or a reticle using a projection optical system (hereinafter referred to as "reticle" ”), And transferred to an exposure device on a substrate (hereinafter referred to as“ wafer ”) coated with a photoresist or the like or a glass substrate. In recent years, as semiconductor elements are highly integrated, a step-and-repeat type projection reduction exposure device (a so-called stepper) or a scanning projection exposure device having a step-and-scan method by improving the stepper ( The so-called scanning stepper) and other successive projection exposure devices have become mainstream projection exposure devices. They expose the wafer placed on a stage that can be driven by XY. After the exposure operation is completed, Perform wafer exchange, wafer alignment ((search alignment) and fine alignment), then perform exposure, and then perform wafer exchange, etc., and repeat these three major operations. Therefore, the time required for wafer exchange and alignment (hereinafter, referred to as "overhead time" for convenience) is the cause of the decrease in the productivity of the device. Recently, a number of proposals have been made (for example, refer to Japanese Patent Application Laid-Open No. 8-51069 and W098 / 24115) to reduce the productivity. ____ 3 __________ This paper standard is applicable to the Chinese National Standard (CNS) A4 standard (210 X 297 mm) A7 550668 V. Description of the invention ()) Descending 'adopts two alignment detection systems, each of which is a mark detection system, and a stage device structure, in an exposure device, and their order, Wafer exposure on one stage, wafer exchange and alignment on another stage. When the wafer exposure on one stage is over, the wafer on the other stage is quickly exposed. A technology that performs multiple exposures while performing parallel processing to increase the productivity of the device. Here, for an example of a movement operation during parallel processing of two stages in a scanning stepper of the conventional dual wafer stage (two wafer stage) type, FIG. 12 (A) to FIG. 12 (c) are used. Give a brief explanation. Fig. 12 (A) shows the speed change of the scanning direction (scanning direction) of the stage during one exposure (scanning exposure) operation. Fig. 12 (B) shows the stepping direction of a stage (non-scanning exposure) (C) shows the speed change of Fig. 12 (C) in parallel with the operation of the above-mentioned one stage, and the wafer kt standard of the EGA method disclosed in, for example, Japanese Unexamined Patent Publication No. 61-44429, etc. Speed changes. In these figures, the ranges of t2, t4, and t6 can be seen from FIG. 12 (A) and FIG. 12 (B). 'It is a carrier that moves continuously in the scanning direction at a constant speed. At the same time, the crystal placed on the carrier is at the same time. Circle for exposure. In parallel with this, another stage performs a movement of the stage between the alignment shots or a mark detection (observation) operation in the alignment shot area. In addition, the ranges of t1, t3, and t5 are known from FIG. 12 (A) and FIG. 12 (B), and they are step operations between exposure and irradiation of one stage. In parallel with this, 'the other stage performs a movement of the stage aligned to the shooting room or a shooting area; a mark detection (observation) operation in the area. In addition, in FIG. 12 (C), the ranges shown by A :, A2, and A3 indicate the ranges in which the mark detection (observation) operation in the alignment imaging area on the other stage is performed. In addition, in Figure 12 (C), the angle ________ 4 _______— This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) '^ (Please read the precautions on the back before filling this page) \ \ 0J.-Line A7 550668 5. Description of the invention (;) (Please read the precautions on the back before filling in this page) ar indicates the acceleration corresponding to another carrier, and at this time the corresponding maximum acceleration is displayed (amax = tana r ) Angle. As mentioned above, in the past, the movement of one carrier and the other (including stationary) was performed without special consideration of the relationship. This is because, for each stage, in order to increase the productivity to the maximum limit, it moves at the highest acceleration and highest speed. [Problems to be Solved by the Invention] 丨 As mentioned above, the parallel processing using two stages in the scanning stepper of the conventional dual wafer stage (two wafer stage) type is used, and one stage and the other are not considered. Mobile relationship (including stationary) of a carrier. Therefore, for example, in the case of scanning and exposing a wafer on one stage, and performing stage movement between alignment shots on another stage, the vibration caused by the movement of the other stage may Disturbances will be transmitted to a carrier through the carrier or the body structure. Therefore, it may result in the position, speed control of a carrier that requires higher accuracy, and even the synchronization of the reticle and the crystal when scanning exposure. Deterioration of accuracy. In addition, 'especially when a high-thrust linear motor is used as the drive source of the stage, due to the heating of the linear motor when the other stage is moved, temperature fluctuations (air fluctuations) occur in the ambient atmosphere (such as air) around the stage. ), And the measurement accuracy of the laser interferometer for measuring the position of the above-mentioned one carrier may be deteriorated due to the air fluctuation. Similarly, it can be performed in parallel with the inspection operation (observation operation) of the alignment mark on the wafer on another stage, and cannot be denied when the movement operation during stepping between exposure and irradiation is performed on one stage side. It is possible that due to the movement of one carrier side, the position control accuracy of the other carrier side (at this time, the stationary accuracy) is reduced. _____5 ___ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) '" A7 550668 -------- --B7 __ 5. Description of the invention (0), the accuracy of alignment measurement is reduced. Takamoto = In view of this, the first item is to provide a stage device that can maintain sufficient high productivity on the one hand and achieve the control performance required by each stage on the one hand. The second object of the present invention is to provide an exposure apparatus which can maintain the local productivity of a knife and achieve the control performance required by each stage on the one hand. A third object of the present invention is to provide a device manufacturing method capable of improving the productivity of a device. [Means to Solve the Problem] Applying for SR Patent Scope and Applying for Patent Scope Item 1 of the invention, a device 'characterized in that it has: μ carrier platform (12); first carrier (WST1) and second The carrier (WST2) can independently perform two-dimensional movement along the guide surface (12a) on the carrier platform; and the carrier control system (19) controls the movement of the two carriers in parallel and makes the carrier When the first movement operation requiring the control performance with a predetermined accuracy or higher is carried out, a restriction requirement for suppressing the decrease in the control performance of the one carrier is issued, and the second movement operation is performed on the other carrier. According to this invention, when the carrier control system controls the movement movements in parallel with the i-th and the second carriers, when a carrier performs a movement operation of a brother r 1 which requires a control edge with a predetermined accuracy or higher, it is continuously issued. The second moving operation is performed while restricting the reduction of the control performance of one carrier while the other carrier is being implemented. Therefore 'can suppress the requirement caused by the second movement of the other carrier — 6 t paper size applies the Chinese National Standard (CNS) A4 specification (21〇X 297 ϋ' '---------- -----— (Please read the precautions on the back before filling this page) Order: -Line A7 550668 V. Description of the invention (t) Control performance in the movement of the controllable brother 1 above the accuracy In addition, the simultaneous and parallel processing using two stages can improve the processing capacity compared to the case where only one stage is used. Therefore, according to the present invention, it is possible to continue to maintain sufficient high productivity and aspects. The control performance of the accuracy required by each carrier is achieved. This day, as a restriction to be issued to another carrier, there are various restrictions. For example, the carrier device of the scope of patent application 2 is issued to another carrier. The restriction requirements may include the upper limit of at least one of the speed and acceleration, or the restriction requirements issued to another carrier, such as the stage device of the patent application scope 3, may include the upper limits of both the speed and acceleration. ^ Restrictions. Each of the carrier devices of the aforementioned scope of application for patents 1 to 3, like the carrier device of the scope of patent application 4, for the aforementioned restriction requirements issued to another carrier may include depending on the operating conditions of the aforementioned one carrier, so that the other another The carrier is divided into a plurality of movements. In addition, each of the carrier devices in the scope of patent application # 3, as in the scope of the patent application 5 ^ carrier device, the aforementioned restrictions imposed on another carrier can include: Move at a constant speed to perform the aforementioned second movement operation. It is difficult to check the carrier of column 116. It is characterized by having a carrier platform (12); a first carrier (WST1) and a second carrier (WST2). , Can carry out two-dimensional movement independently along the guide surface (12a) on the carrier platform; and carrier control system (19), which controls the movement of the two carriers in parallel 7FNS) A4 size (210 x 297 ^ love ^ ~ -------------- install ------ r ^ · κ I ------- ^-I-( Please read the precautions on the back before filling in this page) A7 550668 V. Description of Invention (Hand), and when a carrier is required to implement the control performance that requires more than a predetermined accuracy 1 During the moving operation, the second moving operation of moving at a non-constant speed is performed while reducing the upper limit 値 of at least one of the speed and acceleration to the aforementioned another stage. According to this invention, the stage control system When controlling the movement operation in parallel with the first and second stage 'when one stage is executed to perform the first movement operation which requires control performance higher than a predetermined accuracy', the upper limit 値 of at least one of speed and acceleration is imposed. It is delivered to the aforementioned another carrier and it is allowed to perform the second movement operation at a non-constant velocity. At this time, since the upper limit 値 of at least one of the velocity and acceleration is issued by the other carrier, even if The other carrier moves at a non-constant speed, and it is also possible to suppress a decrease in the control performance of the first movement operation that requires a control performance higher than a predetermined accuracy due to the second movement operation of the other carrier. In addition, the simultaneous processing using two carriers can improve the processing capacity compared to the case where only one carrier is used. Therefore, according to this invention, it is possible to maintain sufficient high productivity on the one hand, and to achieve the control performance of accuracy required for each stage on the other. The exposure device in the scope of patent application 7 of the present invention is to perform simultaneous exposure by scanning the substrates (Wl, W2) with the relative energy beam (IL) to form a predetermined pattern on the substrate, which is characterized by: The stage device of any one; the first movement operation includes scanning and moving the stage when the first substrate (W1 or W2) on the stage is scanned and exposed with the energy beam; the second stage Movement action, including moving the aforementioned another carrier to the desired Chinese paper standard (CNi ^ S721〇x 297 ^ love) ------ ^-(Please read the precautions on the back before filling in this Pages), order, _ | line 'A7 550668 V. Description of the invention (7) Movement of target position. According to this invention, since each stage device having a patent scope of 1 to 6 is provided, a stage control system is used to control the movement of the first and second stages in parallel. The first movement operation performs a scanning movement of the stage when the first substrate loaded on one stage is scanned and exposed by an energy beam, and the second movement operation is performed to move the other stage to a desired target position. In this way, each stage device of the patent application scope 1 to 6 can prevent the control performance of the first movement operation of a stage that requires control performance higher than a predetermined accuracy due to the second movement operation of another stage. Therefore, it is possible to suppress the reduction in the control performance of the scanning movement of the stage when the first substrate is scanned and exposed by the energy beam due to the movement operation of moving the other stage to a desired target position. The predetermined pattern is transferred onto the first substrate with accuracy. In this case, 'compared to the case of sequential substrate exchange, substrate alignment, and scan exposure', it is also possible to maintain the high-tech seat Fengfeng by using two stages in parallel processing at this time. At this time, you can apply for patent scope 8 Like an exposure device, it is further equipped with a mark detection system (ALG1, ALG2) for detecting a plurality of marks formed on the second substrate (W2 or wi) mounted on the other stage, and the desired target position is before $ ' It is included to detect the aforementioned with the aforementioned tag detection system. The position of the plurality of marked stages on the second substrate, the unloading position for removing the second substrate from the other stage, and the loading position for loading a new substrate on the other substrate. one. The exposure device in the scope of patent application No. 9 of the present invention is a relative energy beam scanning paper standard compliance standard (CNS) A4 rule $ Ca χ 297 9 — --- (Please read the precautions on the back before filling this page) · Line- A7 550668 V. Description of the invention (δ) Simultaneous exposure of the drawing substrate to form a predetermined pattern on the aforementioned substrate, which is characterized by having a stage device for applying for patent scope 6 and for detecting the loading on the aforementioned stage The mark detection system for a plurality of marks formed on the first substrate; the first movement operation includes the movement of the first stage when the mark detection system detects the marks on the first substrate; the second movement operation, When the plurality of divisional areas on the second substrate mounted on the other stage are scanned and exposed with the aforementioned energy beam, the above-mentioned * · one stage which moves the next divisional area toward the energy beam irradiation area is exposed. Move action. According to this, since each stage device with patent application scope 6 is provided, the stage control system controls the movement operation in parallel with the i-th and the second stage as the first movement requiring control performance above a predetermined accuracy. Action 'When a mark (alignment mark) on the first substrate is detected by the mark detection system, the movement of one stage (that is, the movement of maintaining a stationary state) is performed as a second movement movement against the other by an energy beam. When a plurality of divisional areas on the second substrate loaded on the stage is subjected to exposure scanning, another stage movement operation is performed to move the next divisional area toward the irradiation area of the aforementioned energy beam (that is, the step between exposure and irradiation). Forward movement). In this way, the carrier device of the scope of application for patent No. 6 can prevent the second mobile operation of another carrier from causing the control performance of the second mobile operation of a carrier to be lowered, which requires control performance higher than a predetermined accuracy. Therefore, it is possible to suppress a decrease in accuracy of maintaining a stationary state of a stage when the movement operation during stepping between exposure and irradiation of another stage is performed by the mark detection system to detect a mark (alignment mark) on the first substrate. ，--—_ _10_ This paper size is applicable to China National Standard (CNS) A4 (210 X 297 public love) (Please read the precautions on the back before filling this page) Order · · Line-A7 550668 V. Description of the invention (?) This improves the detection accuracy (alignment measurement accuracy) of the marks on the second substrate. In this case, compared with the case of sequentially performing substrate exchange, substrate alignment, and scanning exposure, it is also possible to maintain high productivity by processing the two stages simultaneously in parallel. The invention claimed in patent scope 10 includes a method for manufacturing a lithographic element, and is characterized in that the aforementioned lithography process uses an exposure device according to any one of claims 7 to 9 to perform exposure. [Brief description of the drawings] FIG. 1 is a schematic configuration diagram showing an exposure apparatus according to an embodiment. Fig. 2 is a perspective view showing a positional relationship between two wafer stages, reticle stages, a projection optical system, and two alignment optical systems. Fig. 3 is a plan view showing two wafer stages and a driving system thereof, etc. Fig. 4 is a diagram for explaining a flow of a parallel processing operation using two wafer stages. FIG. 5 (A) is a diagram showing a sequence of transferring a pattern onto a wafer in an interactive scanning manner, and FIG. 5 (B) is a diagram showing a sequence of detecting positions of a plurality of alignment marks formed on a wafer . 6 (A) to 6 (C) are diagrams for explaining the first method performed at time T! Of FIG. 4. 7 (A) to 7 (C) are diagrams for explaining the second method performed at the time shown in FIG. 4. Figure 8 (A) ~ Figure 8 (C) are used to illustrate that the time of Figure 4 was performed _______ π ____ This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------ -------- ^^. 1 (Please read the notes on the back before filling out this page). 550668 A7 B7 V. Description of the invention (the diagram of the third method. Figure 9 (A) ~ Figure 9 (C) is a diagram for explaining a fourth method performed at time Ti in FIG. 4. FIG. 10 is a flowchart showing a method for manufacturing a component of the present invention. FIG. 11 is a diagram showing the details of step 204 in FIG. An example flowchart is shown in Fig. 12 (A) to Fig. 12 (C), which is a diagram for explaining the movement of the stage during the parallel processing of two stages in the scanning stepper of the conventional dual wafer stage. [Symbols] -------------- I (Please read the precautions on the back before filling in this page) 12 Stage platform 12a Guide surface 19 Stage control system 50 Stage device 100 Exposure device ALG1, ALG2 Alignment system (mark detection system) ΙΑ Exposure area (irradiation area) IL Illumination light (energy beam) SA Exposure irradiation area (area area) W1, W2 Wafer (substrate) WST1 Round stage (1st stage) WST2 wafer stage (2nd stage) Order: 丨 Line-[Embodiment of Invention] FIG. 1 shows a schematic configuration of an exposure apparatus according to an embodiment. The exposure apparatus 100 Scanning exposure device of step scanning method, that is, 12 paper sizes are applicable to Chinese National Standard (CNS) A4 specification (210 X 297 mm) A7 550668 5. Description of the invention (") Scanning stepper The exposure device 100 is provided with an illumination system 10 for illuminating a reticle R as a photomask with illumination light IL as an energy beam; a reticle driving system mainly drives the reticle R at a predetermined position. Scanning direction (the Y-axis direction in this embodiment (the direction perpendicular to the paper surface in FIG. 1)); the projection optical system PL 'is arranged below the reticle R; and the stage device 50 is arranged on the projection optics Below the system PL, a wafer stage WST1 as a first stage and a wafer stage WST2 as a second stage are respectively held and independently moved in two dimensions as a substrate. Lighting system 10, for example, Japanese Patent Application Laid-Open No. 6-34 9701 and other publications include a light source, an illuminance uniformity optical system including an optical integrator (such as a fly-eye lens or a rod integrator (inside reflection type integrator), etc.), a relay lens, and a variable ND filter Devices, reticle screens, beam splitters, etc. (none of which are shown). The lighting system 10 is illuminated with a light pattern IL as an energy beam to illuminate a circuit pattern with a substantially uniform illuminance. A part of the slit-shaped lighting area IAR (refer to FIG. 2) defined by the reticle curtain on the reticle R. Here, as the illumination light; [L, vacuum ultraviolet light such as ArF excimer laser light (wavelength 193 nm) or F2 laser light (wavelength 157 nm) can be used. The reticle drive system includes a reticle stage J RST that holds the reticle R and can be moved within the XY2 dimension along the reticle base plate 32 shown in FIG. 1, and drives the reticle stage RST. The reticle drive unit 30 and the reticle interferometer system 36 for measuring the position of the reticle stage RST. The aforementioned reticle stage RST actually has the following: through the _______13___ I paper size, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applied (please read the precautions on the back before filling this page) )

訂L .I線 A7 550668 五、發明說明（α ) 空氣軸承浮起支撐於標線片基盤32上面之上方，藉由構成 前述標線片驅動部30之未圖示的線性馬達等以既定行程範 圍驅動於掃描方向的Y軸方向之標線片粗動載台，以及相 對該標線片粗動載台藉由構成前述標線片驅動部30之音圈 馬達等而能微驅動於X軸方向、Y軸方向及0 z方向（繞z 軸之旋轉方向）之標線片微動載台。於該標線片微動載台上 ，透過未圖示之靜電夾頭或真空夾頭吸附保持標線片R。 如上述般，標線片載台RST實際上係由2個載台所構 成，但方便上，在以下之說明中，係假設標線片載台RST 藉由標線片驅動部30而能進行X軸、Y軸方向之微驅動 、βζ方向之微驅動、及Y軸方向之掃描驅動的單一載台 來進行說明。又，標線片驅動部30係以線性馬達、音圈馬 達等作爲驅動源之機構，但爲便於圖不，圖1中僅顯示成 方塊。 標線片載台RST上，如圖2所示，在X軸方向的一側 (+Χ側)端部，於Υ軸方向延設有由與標線片載台RST相 同材質(例如陶瓷)所構成的平行平板移動鏡34，而在該移 動鏡34的X軸方向的一側的面，則以鏡面加工形成反射 面。來自構成圖1的干涉器系統36的測長軸ΒΙ6Χ所示之 干涉器的干涉器光束，照射至該移動鏡34的反射面，該干 涉器則承受該反射光而測量相對於基準面的相對變位，依 3此而測量標線片載台RST的位置。此處，具有該測長軸 ΒΙ6Χ的干涉器，實際上係具有可獨立測量的2個干涉器光 軸，且可測量標線片載台RST的X軸方向位置，及可測量 _14____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) .- 丨線- A7 550668 ____B7__一_ 五、發明說明（ί3 ) (請先閱讀背面之注意事項再填寫本頁) 偏轉（θζ旋轉)量。具有該測長軸BI6X的干涉器，係依據 來自具有後述之晶圓載台側的測長軸ΒΙ1Χ(或ΒΙ2Χ)的干 涉器16(或18)之晶圓載台WST1(或WST2)的偏轉資訊或X 位置資訊，而使用於旋轉控制標線片載台RST於消除標線 片與晶圓的相對旋轉(旋轉誤差）之方向、並進行X方向同 步控制(位置對準）。又，可將標線片載台RST的端面予以 鏡面加工而形成上述反射面。 另一方面，在標線片載台RST的掃描方向(掃描方向) 的Υ軸方向的一側（圖1中的紙面前側），配置有一對角隅 稜鏡34Α，35Β。而自未圖示的一對雙路徑干涉器，對此等 角隅稜鏡34Α，35Β照射以圖2測長軸ΒΙ7Υ、ΒΙ8Υ所示之 干涉器光束。此等干涉器光束係藉由角隅稜鏡34Α，35Β而 返回至設於標線片基盤32上的未圖示之反射面，此處所反 射的各個反射光爲回歸於同一光程，且經各個雙路徑干涉 器而受光，而測量來自各個角隅稜鏡34Α，35Β的基準位置 (基準位置之前述線片基盤32上的反射面）的相對變位。而 且，此類之雙路徑干涉器的測量値係供應於載台控制系統 19，該載台控制系統19則依據前述測量値的平均値，算出 標線片載台RST的Υ軸方向位置。該Υ軸方向的位置資 訊，係算出依具有後述晶圓側的測長軸ΒΙ2Υ的干涉器(參 照圖3)之測量値的標線片載台RST及晶圓載台WST1或 J WST2之相對位置、及使用於依此情形的掃描曝光時的掃 描方向（Y軸方向）的標線片及晶圓的同步控制。 本實施形態，係由以上述測長軸BI6X所示之干涉器 _15_：__ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 550668 _________B7 ___ 五、發明說明（W ) 、及以測長軸BI7Y，BI8Y所示之一對雙路徑干涉器，來構 成標線片干涉器系統36(參照圖1)。 回到圖1，前述投影光學系統PL，係使用物体面側(標 線片側）與像面側（晶圓側）的兩方爲遠心、具有既定投影倍 率/3 (/3係例如1/4或1/5等）之折射系統。因此，當照射來 自照明系統10的照明用光IL於標線片R時，來自標線片 R上所形成的電路圖案區域中被照明用光IL所照射的照明 區域IAR部份的成像光束，即射入投影光學系統PL，該電 路圖案的部份倒立像被限制成狹縫狀(或矩形狀（多角形))而 成像於作爲投影光學系統PL像面側視野中央的照射區域 的曝光區域IA(參照圖2)。據此，所投影的電路圖案的部 份倒立像，被縮小轉印於配置於投影光學系統PL成像面 的晶圓W上作爲區劃區域的複數個曝光照射區域SA(參閱 圖5)中的1個曝光照射區域的光阻層。 前述載台裝置50，透過未圖示之空氣軸承而懸浮支撐 於載台平台上12，具備可獨立2維移動於X軸方向（圖1 之紙面左右方向)及Y軸方向（圖1之垂直紙面方向）的兩個 晶圓載台WST1，WST2，以及分別驅動此等晶圓載台 WST1，WST2之載台驅動系統等。 更詳而述之，在晶圓載台WST1，WST2的底面於複數 位置設有未圖示的空氣軸承，藉由此等空氣軸承在例如保 持數微米間隔之狀態懸浮支撐於載台平台12上面的導引面 12a 〇 載台平台12上，如圖3之俯視圖所示，於X軸方向 ____ 16___ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------------^訂------- (請先閱讀背面之注意事項再填寫本頁) A7 550668 五、發明說明（〖5 ) 間隔既定間隔配置有延伸於X軸方向的一對X軸線性導件 (例如，係由內裝永久磁鐵的磁極單元所構成）86, 87。在此 等X軸線性導件86，87的上方，分別藉由未圖示的空氣軸 承，例如透過數μιη程度的空隙而懸浮支撐有能沿各該X 軸線性導件86, 87移動的各2個滑件82“ 822及8315 832。 上述口日十4個的滑件8 2丨，8 2 2，8 31，8 32 ’具有自上方及側方 包圍X軸線性導件86或87之截面呈反U字形的形狀，其 內部分別內裝有電樞線圏。亦即，本實施形態中，係藉由 分別內裝有電樞線圏的滑件(電樞單元）82!，822及X軸線性 導件86，來分別構成可動磁鐵型的X軸線性馬達，相同地 ，藉由滑件(電樞單元）83^ 832及X軸線性導件87，來分 別構成可動磁鐵型的X軸線性馬達。以下，分別將上述4 個的X軸線性馬達，使用與構成各可動構件的滑件82i， 82^ 83l5 832相同之符號，適當地，將其稱爲線性馬達82ι 、線性馬達822、線性馬達、線性馬達832。 上述4個X軸線性馬達(滑件)82l〜 832中的2個，亦 即X軸線性馬達82!，83!係分別固定於延伸於γ軸方向的 Y軸線性導件(例如由內裝有電樞的電樞單元所構成)8〇1長 邊方向的一端及另一端。此外，剩下的2個X軸線性馬達 822，832則分別固定於同樣延伸於γ軸方向的γ軸線性導 件8〇2的一端及另一端。因此，γ軸線性導件8〇1，8〇2，藉 由各一對的X軸線性馬達82l5 83!，82〗，832而分別沿X軸 驅動。 在晶圓載台WST1的底部，設置具有永久磁鐵的磁極 ______J7_____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐1 -------------------^ ---------*5^ —^w. (請先閱讀背面之注意事項再填寫本頁) 550668 B7 五、發明說明（A) 單兀（省略圖示），且藉由該磁極單元及一 γ軸線性導件80! 而構成可驅動晶圓載台WST1於γ軸方向的可動磁鐵型的 Y軸線性馬達。此外，在晶圓載台WST2的底部，設置具 有永久磁鐵的磁極單元（省略圖示），且藉由該磁極單元及 另一 Y軸線性導件8〇2而構成可驅動晶圓載台WST2於Y 軸方向的可動磁鐵型的Y軸線性馬達。以下，爲方便起見 ，將此等Y軸線性馬達使用與構成各固定構件的線性導件 8〇ι，8〇2相同之符號，稱爲Y軸線性馬達80!、γ軸線性馬 達 802。 本實施形態中，藉由上述X軸線性馬達82!，83!及Y 軸線性馬達8(^，來構成可XY2維驅動晶圓載台WST1的 載台驅動系統，且藉由上述X軸線性馬達822, 832及Y軸 線性馬達802，來構成將晶圓載台WST2驅動於與晶圓載 台WST1獨立之XY2維驅動的載台驅動系統。又，前述X 軸線性馬達sai-ssz及Y軸線性馬達8(^，802，係分別易 圖1所示的載台控制系統19來加以控制。 又，藉由使一對X軸線性馬達82l5 83i所分別產生的 推力略爲相異，即能進行晶圓載台WST1之偏轉的控制。 同樣地，藉由使一對X軸線性馬達822, 832所產生的推力 略爲相異，即能進行晶圓載台WST2之偏轉的控制。 前述晶圓載台WST1上，如圖1、圖2所示，設有晶 >圓固定構件H1。該晶圓固定構件H1係藉由未圖示的真空 泵的真空吸力來吸附保持晶圓W1。 此外，前述晶圓載台WST1上面，設有與晶圓W1大 ___18____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 卜訂· •線 A7 B7 550668 五、發明說明（〇 ) (請先閱讀背面之注意事項再填寫本頁) 致相同高度的基準標記板FM1。在該基準標記板FM1的表 面上’如圖3所示，以既定的位置關係形成有一對第1基 準標記MK1，MK3及第2基準標記MK2。 進而，在前述晶圓載台WST1上面，在X軸方向的一 端（-X側端)具有與X軸正交之反射面的X移動鏡96X延 設於Y軸方向，在Y軸方向的一端（+Y側端)具有與γ軸 正交之反射面的Y移動鏡96Y延設於X軸方向。於在等移 動鏡96X、移動鏡96Y的各反射面，如圖2所示，投射來 自構成後述干涉器系統的各測長軸的干涉器的干涉器光束( 測長光束），且以各干涉器承受該反射光，據以測量各移動 鏡反射面自基準位置(一般來說，係於投影光學系統側面、 或對準系統側面配置固定鏡，以此爲基準面）的變位，據此 ，測量晶圓載台WST1之2維位置。 另一晶圓載台WST2之構成，與晶圓載台WST1相同 〇 亦即’在晶圓載台WST2上，如圖2所示，透過晶圓 固定構件H2來真空吸附晶圓w。 晶圓載台WST2的上面，係如圖2所示，設置有與晶 圓W2大致相同商度的基準標記板。在該基準標記板 FM2的表面上，亦以基準標記板FM1相同的位置關係形成 有第1基準標記MK1，MK3及第2基準標記MK2。 此外，在晶圓載台WST2的上面，在X軸方向的一端 (+X側端)具有與X軸正交之反射面的X移動鏡97x延設 於Υ軸方向，在Υ軸方向的一端（+γ側端)具有與γ軸正 _____19 _ 本紙張尺度適用中關家標準（CNS)A4規格（210 X 297公爱) ^ - 550668 五、發明說明（β) 交之反射面的Y移動鏡97Y延設於X軸方向。在此等移動 鏡97X、移動鏡97Y的各反射面，投射有來自構成後述之 干涉器系統的各測長軸的干涉器的干涉器光束，晶圓載台 WST2之2維位置係及晶圓載台WST1相同之方式進行測 量。 回到圖1，在前述投影光學系統PL的X軸方向兩側 ，設有作爲具有相同功能的離軸（off-axis)方式的標記檢測 系統的一對對準系統ALG1，ALG2，其係分別設於距離投 影光學系統PL的光軸AX(與標線片圖案像的投影中心大 致一致)相同距離的位置。 本實施形態中，作爲前述對準系統ALG1，ALG2，係 使用影像處理方式的成像式對準感測器的一種之FIA(Filed Image Alignment)系統的對準感測器。此等對準系統ALG1， ALG2，含有光源(例如鹵素燈)及成像光學系統、形成有作 爲檢測基準之指標標記的指標板、及攝像元件（CCD)等而 構成。此等對準系統ALG1，ALG2係藉由來自光源的寬頻 (broad band)光來照明檢測對象的標記，且透過成像光學系 統及指標而以CCD接收來自該標記近傍的反射光。此時， 標記的像係與指標的像同時成像於CCD的攝像面。然後， 對來自CCD的影像信號(攝像信號)施以既定的信號處理， 據此來測量以檢測基準點的指標標記的中心爲基準的標記 ^位置。如對準系統ALG1，ALG2之FIA系統的對準感測器 ，對鋁層或晶圓表面的非對稱標記的檢測特別具有功效。 本實施形態中，對準系統ALG1係使用於固定於晶圓 ______20______ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---1---------I I------------* *5^-- (請先閱讀背面之注意事項再填寫本頁) A7 550668 五、發明說明（/?) 載台WST1上之晶圓上的對準標記、形成於基準標記板 FM1的基準標記之位置測量等。此外，對準系統ALG2係 使用於固定於晶圓載台WST2上之晶圓上的對準標記、形 成於基準標記板FM2的基準標記之位置測量等。 來自對準系統ALG1，ALG2的影像信號，經未圖式的 對準控制裝置而進行A/D變換，且演算已數位化的波形 信號來檢測以指標中心爲基準的標記位置。該標記位置的 資訊，自未圖式的對準控制裝置傳送至主控制裝置20。 接著’參閱圖1〜圖3說明有關測量各晶圓載台的2 維位置的前述干涉器系統。 如圖2所示，在晶圓載台WST1上的X移動鏡96X的 反射面，沿著通過投影光學系統PL的光軸AX及對準系統 ALG1的光軸SXa(與前述指標標記的中心一致)的X軸，照 射來自X軸干涉器16(參閱圖1、圖3)的測長軸BI1X所示 的干涉器光束。同樣地，在晶圓載台WST2上的X移動鏡 97X的反射面，沿著通過投影光學系統Pl的光軸AX及對 準系統ALG2的光軸SXb(與前述指標標記的中心一致）的 X軸，照射來自X軸干涉器18(參閱圖1、圖3)的測長軸 BI2X所示的干涉器光束。然後，X軸干涉器16, 18分別接 收來自移動鏡96X，97X的反射光，並據以測量來自各反射 面之基準位置的相對變位，測量晶圓載台WST1，WST2的 X軸方向位置。此處，X軸干涉器16，18，如圖2所示， 係具有各3個光軸的3軸干涉器，除了測量晶圓載台 WST1，WST2的X軸方向之外，亦可測量橫搖方向（繞γ軸 _____21___ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） " " ------^--------- (請先閱讀背面之注意事項再填寫本頁) A7 550668 五、發明說明（^ ) 之旋轉（0y旋轉))及偏轉方向（θζ方向旋轉）。各光軸的輸 出値可獨立測量。 又，測長軸ΒΙ1Χ，ΒΙ2Χ的各干涉器光束，在晶圓載台 WST1，WST2的移動範圍的全域，係隨時照射於移動鏡 96Χ，97Χ之狀態，因此，於X軸方向，在使用投影光學系 統PL的曝光時，或在對準系統ALG1，ALG2的使用時， 測晶圓載台WST1，WST2的位置均依據測長軸ΒΙ1Χ、測長 軸ΒΙ2Χ的測量値而受到管理。 此外，本實施形態，如圖2及圖3所示，設有：具有 在投影光學系統PL的光軸ΑΧ及測長軸ΒΙ1Χ、測長軸 ΒΙ2Χ相垂直交叉的測長軸ΒΙ2Υ之Υ軸干涉器46，以及分 別具有在對準系統ALG1，ALG2的光軸SXa，SXb及測長軸 BI1X、測長軸BI2X分別相垂直交叉的測長軸BI1Y，BI3Y 之Y軸干涉器44, 48。 本實施形態中，在使用投影光學系統PL的曝光時之 晶圓載台WST1，WST2的Y方向位置測量，係使用具有通 過投影光學系統PL的光軸AX的測長軸ΒΙ2γ之γ軸干涉 器46的測量値，而在對準系統ALG1之使用時等的晶圓載 台WST1之Υ方向位置測量，係使用具有通過對準系統 ALG1的光軸SXa的測長軸ΒΙ1Υ之Υ軸干涉器44的測量 値，而在對準系統ALG2之使用時等的晶圓載台WST2之 Y方向位置測量，則係使用具有通過對準系統ALG2的光 軸SXb的測長軸BI3Y之Y軸千涉器48的測量値。 如此，本實施形態中，係藉由X軸干涉器16，18及γ 22 ί紙張尺度適用中國國家標準（CNS)A4規格（210 X 2θϋ) '' --------------i丨 (請先閱讀背面之注意事項再填寫本頁) 卜訂-I. -丨線 550668 B7 五、發明說明（J ) 軸干渉器44, 46, 48的合計5個的干涉器，來構成管理晶 圓載台WST1，WST2的XY2維座標位置之干涉器系統。 由至此爲止之說明可知，本實施形態，視狀況，會有 Y軸干涉器的測長軸偏離晶圓載台WST1，WST2的反射面 之狀態。亦即，自對準位置移動至曝光位置、或自曝光位 置移動至晶圓交換位置等之際，產生Y軸方向的干涉器光 束無法照射於晶圓載台WST1，WST2之移動鏡的情形，而 必須切換控制用的干涉器。考量此點，而設置測量晶圓載 台WST1，WST2之Y軸方向位置之未圖示的線性編碼器。 亦即，本實施形態中，載台控制系統19，在晶圓載台 WST1，WST2自上述對準位置往曝光裝置移動、或自曝光 裝置往晶圓交換位置的移動等之際，係根據來自主控制裝 置20的指示，依據以X軸干涉器所測量的晶圓載台 WST1，WST2的X位置資訊、及以線性編碼器所測量的晶 圓載台WST1，WST2的Y位置資訊，來控制晶圓載台 WST1，WST2的X位置、Y位置的移動。 當然，載台控制系統19，根據來自主控制裝置20的 指不’當來自Y軸干涉器的干涉光束再度照射於晶圓載台 WST1，WST2的移動鏡時，即重新設定(或預設)截至此時未 使用於控制之測長軸的Y軸干涉器，而後，僅依據構成干 涉器系統的X軸干涉器、Y軸干涉器的測量値，來控制晶 J圓載台WST1，WST2的移動。 又，由圖2可知，上述γ軸干涉器44，46，48係各具 有2個光軸之2軸干涉器，在測量晶圓載台WSTi，WST2 _____23______ 本尺度適用中國國家標準（CNS)A4規格（210 X 297公爱) "~- --------------------訂·----------- (請先閱讀背面之注意事項再填寫本頁} A7 550668 五、發明說明（>>) 的Y軸方向之外，亦能測量縱搖方向(繞X軸之旋轉（θχ 旋動)）。此外，各光軸的輸出値能獨立測量。 又’亦可將晶圓載台WST1，WST2的端面予以鏡面加 工而形成前述反射面。 構成如上述構成的干涉器系統之各干涉器的測量値， 係透過圖1所不之載台控制系統19傳送至主控制裝置2 0 。載台控制系統19，根據來自主控制裝置20的指示，依 據各干涉器的輸出値而透過前述各載台驅動系統來控制晶 圓載台WST1，WST2。亦即，本實施形態，係以此方式將 晶圓載台WST1，WST2在彼此獨立、且無機械干涉的狀態 下驅動於2維方向。 再者，雖省略圖示，但本實施形態係在標線片R的上 方，係設置有TTR(Through The Reticle)方式之標線片對準 顯微鏡，其係透過投影光學系統PL而使用同時用以觀測 標線片R上的標線片標記及基準標記FM1、FM2上的標記 之曝光波長之TTR方式之標線片對準顯微鏡。此等標線片 對準顯微鏡的檢測信號，係透過未圖示之對準控制裝置供 應至主控制裝置20。又，標線片對準顯微鏡之構成，已揭 示於例如特開平7-176468號公報，故此處省略其詳細說明 〇Order L.I line A7 550668 V. Description of the invention (α) The air bearing is floated and supported above the top of the reticle base plate 32, and a predetermined stroke is performed by a linear motor (not shown) constituting the reticle drive section 30 described above. The reticle coarse motion stage, which is driven in the Y-axis direction in the scanning direction, and the coarse motion stage relative to the reticle coarse motion stage can be micro-driven on the X axis by the voice coil motor constituting the reticle drive unit 30 described above. The reticle micro-movement stage in the direction, the Y-axis direction, and the 0-z direction (the rotation direction around the z-axis). On the reticle micro-movement stage, the reticle R is sucked and held by an electrostatic chuck or a vacuum chuck (not shown). As described above, the reticle stage RST is actually composed of two stages, but for convenience, in the following description, it is assumed that the reticle stage RST can perform X by the reticle drive unit 30. The single stage of the micro-drive in the axial direction, the Y-axis direction, the micro-drive in the βζ direction, and the scan drive in the Y-axis direction will be described. The reticle drive unit 30 is a mechanism using a linear motor, a voice coil motor, or the like as a drive source. However, for the sake of convenience, only blocks are shown in FIG. 1. As shown in FIG. 2, the reticle stage RST is extended at the end of one side (+ X side) in the X-axis direction in the Z-axis direction and is made of the same material as the reticle stage RST (eg, ceramic). The formed parallel flat plate moves the mirror 34, and the surface on one side in the X-axis direction of the moving mirror 34 is mirror-finished to form a reflecting surface. The interferometer light beam from the interferometer shown in the long axis B1-6 of the interferometer system 36 of FIG. 1 is irradiated to the reflecting surface of the moving mirror 34. The interferometer receives the reflected light and measures the relative to the reference plane. The position of the reticle stage RST is measured in accordance with the displacement. Here, the interferometer having the long axis BΙ6 × actually has two interferometer optical axes that can be measured independently, and can measure the X-axis position of the reticle stage RST, and can measure _14____ this paper Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the precautions on the back before filling this page).-丨 Line-A7 550668 ____B7__ 一 _ V. Description of the Invention (ί3) (Please Read the precautions on the back before filling out this page) Amount of deflection (θζ rotation). The interferometer having the length-measuring axis BI6X is based on the deflection information of the wafer stage WST1 (or WST2) from the interferometer 16 (or 18) having a length-measuring axis BIL1X (or BIL2X), which will be described later. The X position information is used to rotate the reticle stage RST in a direction that eliminates the relative rotation (rotation error) between the reticle and the wafer, and performs X-direction synchronous control (position alignment). The end surface of the reticle stage RST can be mirror-finished to form the above-mentioned reflecting surface. On the other hand, a pair of corners 隅 34A, 35B are arranged on one side (front side of the paper in FIG. 1) of the reticle stage RST in the scanning direction (scanning direction). From the pair of two-path interferometers (not shown), the corners 34A, 35B are irradiated with the interferometer beams shown by the long axes BII7Υ and BΙ8Υ shown in FIG. 2. These interferometer beams are returned to the reflecting surface (not shown) provided on the reticle base plate 32 by the angles 34A, 35B. Each reflected light here returns to the same optical path and passes through Each of the two-path interferometers receives light, and measures the relative displacements of the reference positions (reflective surfaces on the aforementioned wire substrate 32) of the respective corners 34A, 35B. In addition, the measurement path of such a dual-path interferometer is supplied to the stage control system 19, and the stage control system 19 calculates the y-axis position of the reticle stage RST based on the average chirp of the aforementioned measurement chirps. The position information in the Z axis direction is a relative position of the reticle stage RST and the wafer stage WST1 or J WST2 measured by an interferometer (refer to FIG. 3) having a length measuring axis BII2 () on the wafer side described later. And synchronous control of reticle and wafer used in the scanning direction (Y-axis direction) during scanning exposure according to this situation. This embodiment is based on the interferometer _15 _: __ shown in the above-mentioned measuring axis BI6X. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) A7 550668 _________B7 ___ 5. Description of the invention (W ) And a pair of two-path interferometers shown in the long axis BI7Y and BI8Y to form a reticle interferometer system 36 (see FIG. 1). Returning to FIG. 1, the aforementioned projection optical system PL uses both the object surface side (the reticle side) and the image surface side (the wafer side) as telecentric and has a predetermined projection magnification of / 3 (/ 3 series, such as 1/4 Or 1/5, etc.). Therefore, when the illumination light IL from the illumination system 10 is irradiated on the reticle R, the imaging light beam from the illumination area IAR portion of the circuit pattern area formed on the reticle R is illuminated by the illumination light IL. That is, it is incident on the projection optical system PL, and a partial inverted image of the circuit pattern is limited to a slit shape (or a rectangular shape (polygonal shape)) and is imaged on an exposure area that is an irradiation area in the center of the field of view of the image side of the projection optical system PL. IA (see Figure 2). According to this, a part of the inverted image of the projected circuit pattern is reduced and transferred onto the wafer W arranged on the imaging surface of the projection optical system PL as a divided area in the plurality of exposure irradiation areas SA (see FIG. 5). A photoresist layer in the exposure area. The aforementioned stage device 50 is suspended and supported on the stage platform 12 through an air bearing (not shown), and has independent two-dimensional movement in the X-axis direction (left-right direction of the paper surface in FIG. 1) and the Y-axis direction (vertical in FIG. 1). Paper direction) two wafer stages WST1, WST2, and a stage driving system that drives these wafer stages WST1, WST2, etc., respectively. More specifically, the bottom surfaces of the wafer stages WST1 and WST2 are provided with air bearings (not shown) at a plurality of positions, so that the air bearings are suspended and supported on the stage platform 12 while maintaining a distance of several micrometers, for example. Guide surface 12a 〇On the platform platform 12, as shown in the top view of Figure 3, in the X-axis direction ____ 16___ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ----- -------------- ^ Order ------- (Please read the notes on the back before filling in this page) A7 550668 V. Description of the invention (〖5) Interval given interval configuration There are a pair of X-axis linear guides extending in the X-axis direction (for example, a magnetic pole unit with a built-in permanent magnet) 86, 87. Above the X-axis linear guides 86 and 87, each of which can be moved along the X-axis linear guides 86 and 87 is suspended and supported by air bearings (not shown), for example, through a gap of several μm. 2 sliders 82 "822 and 8315 832. The above-mentioned 14 sliders 8 2 丨, 8 2 2, 8 31, 8 32 'have the X-axis linear guide 86 or 87 which surrounds the X axis from above and laterally. The cross-section is in the shape of an inverted U-shape, and the armature wire 分别 is respectively contained in the inside. That is, in this embodiment, the slider (armature unit) 82! And the X-axis linear guide 86, respectively, constitute a movable magnet-type X-axis linear motor, and similarly, the slider (armature unit) 83 ^ 832 and the X-axis linear guide 87 constitute a movable-magnet type X-axis linear motor. In the following, the four X-axis linear motors described above will be referred to as the linear motors 82i, linear motors, and linear motors as appropriate, using the same symbols as the sliders 82i and 82 ^ 83l5 832 constituting each movable member. 822, linear motor, linear motor 832. Two of the above-mentioned four X-axis linear motors (sliders) 82l to 832, that is, X The linear motors 82! And 83! Are respectively fixed to the Y-axis linear guide (for example, an armature unit with an armature built-in) extending in the γ-axis direction at one end and the other end in the longitudinal direction. The remaining two X-axis linear motors 822, 832 are respectively fixed to one end and the other end of the γ-axis linear guide 802 which also extends in the γ-axis direction. Therefore, the γ-axis linear guide 801, 8 〇2, each pair of X-axis linear motors 82l5 83 !, 82〗, 832 are driven along the X axis. At the bottom of the wafer stage WST1, a magnetic pole with a permanent magnet is set ______J7_____ This paper size is applicable to China Standard (CNS) A4 specification (210 X 297 mm 1 ------------------- ^ --------- * 5 ^ — ^ w. ( Please read the precautions on the back before filling in this page) 550668 B7 V. Description of the invention (A) Unit (not shown), and the magnetic pole unit and a γ-axis linear guide 80! Constitute a driveable wafer carrier A Y-axis linear motor with a movable magnet type of the stage WST1 in the γ-axis direction. A magnetic pole unit (not shown) with a permanent magnet is provided at the bottom of the wafer stage WST2. The magnetic pole unit and another Y-axis linear guide 802 constitute a movable magnet-type Y-axis linear motor that drives the wafer stage WST2 in the Y-axis direction. Hereinafter, these Y-axis linear motors are used for convenience. The same symbols as the linear guides 80m and 802 constituting each fixed member are referred to as a Y-axis linear motor 80! And a γ-axis linear motor 802. In this embodiment, the X-axis linear motor 82! 83! And Y-axis linear motor 8 (^) to form a stage driving system capable of XY 2-dimensional driving of wafer stage WST1, and the above-mentioned X-axis linear motors 822, 832 and Y-axis linear motor 802 are used to configure wafer loading. The stage WST2 is driven by a stage driving system of XY 2-dimensional driving which is independent of the wafer stage WST1. The X-axis linear motor sai-ssz and the Y-axis linear motor 8 (^, 802 are controlled by the stage control system 19 shown in FIG. 1, respectively. In addition, a pair of X-axis linear motors 8215 are controlled. The thrusts generated by the 83i are slightly different, that is, the deflection control of the wafer stage WST1 can be performed. Similarly, by making the thrusts generated by a pair of X-axis linear motors 822, 832 slightly different, the thrust can be performed. Control of the deflection of the wafer stage WST2. The wafer stage WST1, as shown in Figs. 1 and 2, is provided with a crystal > circle fixing member H1. The wafer fixing member H1 is provided by a vacuum pump (not shown). Vacuum suction is used to suck and hold the wafer W1. In addition, the wafer stage WST1 is provided with a size larger than the wafer W1 ___18____ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read first Note on the back, please fill in this page again.) 订 · Line A7 B7 550668 V. Description of invention (〇) (Please read the notes on the back before filling out this page) To the same height reference mark board FM1. At this reference mark On the surface of the board FM1 'as shown in Figure 3, The relationship is formed by a pair of first reference marks MK1, MK3, and second reference mark MK2. Further, on the wafer stage WST1, one end (-X side end) in the X-axis direction has a reflecting surface orthogonal to the X-axis. The X-moving mirror 96X is extended in the Y-axis direction, and the Y-moving mirror 96Y having a reflecting surface orthogonal to the γ axis at one end (+ Y side end) in the Y-axis direction is extended in the X-axis direction. As shown in FIG. 2, each reflecting surface of the moving mirror 96Y projects an interferometer beam (length measuring beam) from an interferometer constituting each length measuring axis of the interferometer system described later, and each interferometer receives the reflected light. Based on the measurement of the displacement of the reflecting surface of each moving mirror from the reference position (generally, it is attached to the side of the projection optical system or a fixed mirror is arranged on the side of the alignment system as the reference surface), and the wafer stage WST1 is measured accordingly. Two-dimensional position. The structure of the other wafer stage WST2 is the same as that of the wafer stage WST1, that is, 'on the wafer stage WST2, as shown in FIG. 2, the wafer w is vacuum-adsorbed through the wafer fixing member H2. The upper surface of the wafer stage WST2 is as shown in FIG. To the same reference mark plate. On the surface of this reference mark plate FM2, the first reference mark MK1, MK3 and the second reference mark MK2 are also formed in the same positional relationship as the reference mark plate FM1. On the upper surface of the stage WST2, an X-moving mirror 97x having a reflecting surface orthogonal to the X-axis at one end (+ X side end) in the X-axis direction is extended in the Z-axis direction, and one end (+ γ-side end) in the Z-axis direction. With the positive γ axis _____19 _ This paper size applies the Zhongguanjia Standard (CNS) A4 specification (210 X 297 public love) ^-550668 V. Description of the invention (β) The Y moving mirror 97Y intersects the reflection surface and is extended on X axis direction. On each of the reflecting surfaces of the moving mirror 97X and the moving mirror 97Y, an interferometer beam from an interferometer constituting each of the length measuring axes of the interferometer system described later is projected, the two-dimensional position system of the wafer stage WST2, and the wafer stage. WST1 is measured in the same way. Returning to FIG. 1, a pair of alignment systems ALG1 and ALG2 as off-axis mark detection systems having the same function are provided on both sides of the X-axis direction of the aforementioned projection optical system PL, respectively. It is provided at the same distance from the optical axis AX of the projection optical system PL (which substantially coincides with the projection center of the reticle pattern image). In this embodiment, the alignment systems ALG1 and ALG2 are alignment sensors of the FIA (Filed Image Alignment) system, which is a type of imaging-type alignment sensor using an image processing method. These alignment systems ALG1 and ALG2 are composed of a light source (e.g., a halogen lamp) and an imaging optical system, an index plate formed with index marks as detection standards, and an imaging element (CCD). These alignment systems ALG1 and ALG2 illuminate the mark of the detection object with broad band light from the light source, and receive the reflected light from the vicinity of the mark with the CCD through the imaging optical system and index. At this time, the marked image system and the index image are simultaneously imaged on the imaging surface of the CCD. Then, a predetermined signal processing is performed on the image signal (imaging signal) from the CCD, and the position of the mark ^ is measured based on the center of the index mark for detecting the reference point. Alignment sensors such as the alignment system ALG1 and ALG2's FIA system are particularly effective for detecting asymmetric marks on the aluminum layer or wafer surface. In this embodiment, the alignment system ALG1 is used for fixing on the wafer ______20______ This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) --- 1 --------- I I ------------ * * 5 ^-(Please read the precautions on the back before filling this page) A7 550668 5. Description of the invention (/?) Wafer on the carrier WST1 Position measurement of the alignment mark on the reference mark, the reference mark formed on the reference mark plate FM1, and the like. In addition, the alignment system ALG2 is an alignment mark used on a wafer fixed on the wafer stage WST2, a position measurement of a reference mark formed on a reference mark plate FM2, and the like. The image signals from the alignment systems ALG1 and ALG2 are A / D converted by an unillustrated alignment control device, and a digitized waveform signal is calculated to detect the position of the mark with the index center as a reference. This mark position information is transmitted from the unillustrated alignment control device to the main control device 20. Next, referring to Figs. 1 to 3, the aforementioned interferometer system for measuring the two-dimensional position of each wafer stage will be described. As shown in FIG. 2, the reflection surface of the X moving mirror 96X on the wafer stage WST1 is along the optical axis AX passing through the projection optical system PL and the optical axis SXa of the alignment system ALG1 (the same as the center of the index mark). The X-axis irradiates the interferometer beam from the length-measuring axis BI1X of the X-axis interferometer 16 (see FIGS. 1 and 3). Similarly, the reflection surface of the X moving mirror 97X on the wafer stage WST2 is along the X axis of the optical axis AX passing through the projection optical system P1 and the optical axis SXb of the alignment system ALG2 (which coincides with the center of the index mark). , Irradiate the interferometer light beam shown by the length-measuring axis BI2X from the X-axis interferometer 18 (see FIGS. 1 and 3). Then, the X-axis interferometers 16, 18 respectively receive the reflected light from the moving mirrors 96X and 97X, and measure the relative displacements of the reference positions from the respective reflecting surfaces to measure the X-axis position of the wafer stages WST1 and WST2. Here, as shown in FIG. 2, the X-axis interferometers 16 and 18 are three-axis interferometers each having three optical axes. In addition to measuring the X-axis directions of the wafer stages WST1 and WST2, the roll can also be measured. Orientation (around the γ axis _____21___ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) " " ------ ^ --------- (Please read first Note on the back page, please fill out this page again) A7 550668 V. Explanation of the invention (^) rotation (0y rotation)) and deflection direction (θζ rotation). The output 値 of each optical axis can be measured independently. In addition, the interferometer beams of the long axes BIL1X and BIL2X are irradiated to the moving mirrors 96 × and 97 × at any time in the entire range of the movement range of the wafer stages WST1 and WST2. Therefore, in the X-axis direction, projection optics is used. During the exposure of the system PL or the use of the alignment systems ALG1 and ALG2, the positions of the wafer measurement stages WST1 and WST2 are managed according to the measurement axis of the long axis BΙ1 × and the long axis BII2 ×. In addition, as shown in FIG. 2 and FIG. 3, the present embodiment is provided with a y-axis interference of a length-measuring axis BII2Υ perpendicular to the optical axis A × and length-measuring axis B11 × and length-measuring axis BII2 × of the projection optical system PL. The measuring device 46 and the Y-axis interferometers 44 and 48 of the measuring axes BI1Y and BI3Y respectively having optical axes SXa, SXb and length-measuring axis BI1X and length-measuring axis BI2X perpendicular to the alignment systems ALG1 and ALG2, respectively. In this embodiment, the Y-direction position measurement of the wafer stages WST1 and WST2 during exposure using the projection optical system PL uses a γ-axis interferometer 46 having a length-measuring axis BII2γ that passes through the optical axis AX of the projection optical system PL. The measurement of the position in the Υ direction of the wafer stage WST1 when the alignment system ALG1 is used, etc., is performed using the Υ-axis interferometer 44 having a length measuring axis BΙ1 through the optical axis SXa of the alignment system ALG1. The Y-position measurement of the wafer stage WST2 when the alignment system ALG2 is in use is measured using the Y-axis interferometer 48 having a length-measuring axis BI3Y that passes the optical axis SXb of the alignment system ALG2. value. In this way, in this embodiment, the paper standards of the X-axis interferometers 16, 18 and γ 22 are applied to the Chinese National Standard (CNS) A4 specification (210 X 2θϋ) '' ----------- --- i 丨 (Please read the precautions on the back before filling this page) Proposal-I.-丨 Line 550668 B7 V. Description of the invention (J) A total of 5 interferometers for shaft dryers 44, 46, 48 To form an interferometer system for managing the XY2-dimensional coordinate positions of the wafer stages WST1 and WST2. From the description so far, it can be seen that in this embodiment, depending on the situation, the length measurement axis of the Y-axis interferometer may deviate from the reflecting surfaces of the wafer stages WST1 and WST2. That is, when the self-aligned position is moved to the exposure position, or the self-exposed position is moved to the wafer exchange position, the interferometer beam in the Y-axis direction cannot be irradiated to the moving mirrors of the wafer stages WST1 and WST2, and The control interferometer must be switched. Taking this into consideration, a linear encoder (not shown) for measuring the Y-axis position of the wafer stages WST1 and WST2 is provided. That is, in this embodiment, the stage control system 19 moves the wafer stages WST1 and WST2 from the above-mentioned alignment position to the exposure device or from the exposure device to the wafer exchange position. The instruction of the control device 20 controls the wafer stage based on the X position information of the wafer stages WST1 and WST2 measured by the X-axis interferometer and the Y position information of the wafer stages WST1 and WST2 measured by the linear encoder. WST1, WST2 X position, Y position movement. Of course, according to the instructions from the main control device 20, the stage control system 19 resets (or presets) the interference beam from the Y-axis interferometer to the moving mirrors of the wafer stages WST1 and WST2 again. At this time, the Y-axis interferometer for measuring the long axis is not used for control. Then, the movement of the crystal J circular stage WST1, WST2 is controlled only based on the measurement of the X-axis interferometer and the Y-axis interferometer of the interferometer system. It can be seen from FIG. 2 that the above-mentioned γ-axis interferometers 44, 46, and 48 are two-axis interferometers each having two optical axes. When measuring wafer stages WSTi, WST2 _____23______ This standard applies to China National Standard (CNS) A4 (210 X 297 public love) " ~--------------------- Order · --------- (Please read the first Please fill in this page again for attention} A7 550668 5. In addition to the Y-axis direction of the invention description (>), the pitch direction (rotation about the X-axis (θχ rotation)) can also be measured. In addition, each optical axis The output of the interferometer can be measured independently. Also, the end surfaces of the wafer stages WST1 and WST2 can be mirror-processed to form the aforementioned reflecting surface. The measurement of each interferometer constituting the interferometer system configured as described above is shown in FIG. The stage control system 19 is transmitted to the main control device 20. The stage control system 19 controls the wafer stage through the aforementioned stage driving systems according to the instructions from the main control device 20 and the output of each interferometer. WST1, WST2. That is, in this embodiment, the wafer stages WST1 and WST2 are in a state of being independent of each other and having no mechanical interference. The bottom drive is in a two-dimensional direction. Moreover, although not shown in the figure, this embodiment is a reticle alignment microscope provided with a TTR (Through The Reticle) method above the reticle R, which is transmitted through the projection The optical system PL uses a TTR-type reticle alignment microscope that simultaneously observes the exposure wavelengths of the reticle marks on the reticle R and the marks on the reference marks FM1 and FM2. These reticle alignment microscopes The detection signal is supplied to the main control device 20 through an alignment control device (not shown). The configuration of the reticle alignment microscope has been disclosed in, for example, Japanese Unexamined Patent Publication No. 7-176468, and detailed descriptions thereof are omitted here. 〇

此外，雖省略圖示，但投影光學系統PL、對準系統 ^ ALG1，ALG2，分別設有用以調查對焦位置自動對焦/自動 調平測量機構(以下「稱AF/AL系統」）。如此，在投影 光學系統PL、對準系統ALG1，ALG2，分別設有AF/AL ________24_ __ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂· -丨線_ A7 550668 五、發明說明（β) 系統的曝光裟置之構成，已詳細揭示於例如特開平工〇-214783號公報，係爲習知，故此處省略更進一步之說明。 接者，參照圖4，簡單說明如上述構成、以曝光裝置 100進行之使用晶圓載自WST1，WST2之並行麵動作之 流程。此處，爲方便起見，係說明有關圖4之時間Τε之區 間。 首先，在投影光學系統PL的下方的晶圓載台WST2 上，對晶圓W2以步進掃描方式進行曝光（關於此容後述) ，與此並行，在既定的左側晶圓交換位置(裝載位置兼卸載 位置），於晶圓載台WST1與未圖示的搬送系統之間進行晶 圓的父換。藉經由此晶圓父換，於晶圓載台WST1上裝載 晶圓W1，且此處，係設晶圓w 1的殘留旋轉誤差幾乎爲零 。此處，左側晶圓交換位置，例如係以對準系統ALG1來 決定可檢測基準標記板FM1上的基準標記MK2之位置。 此情形時’在晶圓載台WST1上，係於晶圓交換後， 以後述方式進行晶圓對準測量動作。又，曝光動作中的晶 圓載台WST2的位置控制，係依據干涉器系統的測長軸 BI2X，BI2Y的測量値來進行，而進行晶圓交換及晶圓對準 測量動作的晶圓載台WST1的位置控制，係依據干涉器系 統的測長軸BI1X，BI1Y的測量値來進行。 於上述左側晶圓換位置，係配置成晶圓載台WST1的 °基準標記板FM1上的基準標記MK2位於對準系統ALG1 的正下方。因此，載台控制系統19係根據主控制裝置20 的指示，在以對準系統ALG1檢測基準標記MK2之前，實 25 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） * &quot; I I I I I — II —- I I--I I I---· I I I----—線 —-- (請先閲讀背面之注意事項再填寫本頁) A7 550668 五、發明說明（) 施干涉器系統的測長軸BI1Y的干涉器的重設。 (請先閱讀背面之注意事項再填寫本頁) 線 於上述晶圓交換、干涉器的重設後，在晶圓載台 WST1側，例如進行EGA(加強形全晶圓對準）方式的晶圓 對準，並算出晶圓W1上的各曝光照射區域的排列座標。 具体而言，係藉由干涉器系統(測長軸BI1X，BI1Y)，一邊 管理晶圓載台WST1的位置，一邊以設計上的曝光照射排 列資料（對準標記位置資料）爲基準，來一邊依序移動晶圓 載台WST1，並依據附設於對準系統ALG1的對準曝光照 射區域的對準標記的檢測結果、及該檢測時的干涉器系統( 測長軸BI1X，BI1Y)的測量値，來分別算出晶圓wi上複數 個對準曝光照射區域的位置座標，且依據此等算出結果及 曝光照射排列的設計座標資料，藉由最小平方法的統計演 算，來演算全部的曝光照射排列資料。又，該EGA之際的 各部份的動作係藉由主控制裝置20來控制，且上述演算係 以主控制裝置20來進行。此情形下，晶圓載台WST1的位 置，係依據主控制裝置20的指示而藉由載台控制系統 來進行控制。又，上述演算結果，最好是能預先轉換成以 基準fes己板FM1之基準標記MK2的位置爲基準的座標系 統。 在晶圓載台WST1側進f了晶圓交換、晶圓對準測量動 作期間，晶圓載台WST2側則對晶圓W2持續進行步進掃 J描方式的曝光。具体而言，係與前述晶圓W1側相同地， 預先進行EGA方式的晶圓對準，並依據該結果所得的晶圓 W2上的曝光照射排列資料(以基準標記板fmi上的基準標 本紙張尺度適用中國國i標準（CNS)A4規格（210 X 297公釐） &quot; ' A7 550668 ________B7______ 五、發明說明（β ) 記MK2爲基準），在依序將晶圓W2上之曝光照射區域移 動至投影光學系統PL的光軸下方後，於每次曝光照射區 域的曝光時，使標線片載台RST與晶圓載台WST2同步掃 描於掃描方向，據此來進行掃描曝光。此晶圓W2的掃描 曝光中各部的動作亦由主控制裝置20來控制，而晶圓載台 WST2的位置，則根據主控制裝置20的指示以載台控制系 統19來加以控制。 在上述兩個晶圓載台WST1，WST2上並行之曝光程序 與晶圓交換、對準程序，由於一般係晶圓交換、對準程序 較先結束，故在晶圓載台WST2側的曝光動作完成爲止晶 圓載台WST1係成待機狀態。接著，在結束對晶圓W2的 曝光動作之時點，即開始晶圓載台WST1，WST2的移動。 接著，晶圓載台WST1，雖係移動至投影光學系統PL 的光軸AX(投影中心）的正下方之基準標記板FM1上的基 準標記MK1，MK3所來到的位置爲止，但在該移動中，測 長軸BI1Y的干涉器光束將不會射入晶圓載台WST1的移 動鏡96Y。因此，載台控制系統19係在該時點之後，根據 來自主控制裝置20的指示，而依具有測長軸BI1X的干涉 器16的測量値與未圚示的線性編碼器的測量値來控制晶圓 載台WST1的位置。 然後，主控制裝置20使用未圖示之標線片對準顯微鏡 ’在測量基準標記板FM1上的基準標記MK1，MK3及與此 對應的標線片R上的標線片標記的相對位置關係之前，重 設具有測長軸BI2Y的干涉器46。重設動作可在下次所使 ----27__ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱) 一 1 I (請先閱讀背面之注意事項再填寫本頁) —訂i -丨線· A7 550668 ____B7 ___ 五、發明說明（&gt;〇 用的測長軸干涉器光束爲能照射到晶圓載台WST1的移動 鏡96Y的時點時實施之。 (請先閱讀背面之注意事項再填寫本頁) •線· 如則所述，即使進行干涉器的重設動作亦能進行高精 度對準的理由，係由於在藉由對準系統ALG1來檢測基準 標記板FM1上的基準標記MK2之後，再進行前述Ega方 式的晶圓對準，並將依據對準系統ALG1之對準曝光照射 區域的對準標記的檢測結果所算出的假設位置(晶圓W1上 各曝光照射區域的座標位置），予以變換成以基準標記 MK2爲基準的座標系統的位置座標之故。由在該時點求出 基準標記與應曝光位置的相對距離，因此只要能在曝光前 藉由標線片對準顯微鏡取得曝光位置與基準標記位置的對 應關係，再加算上述相對距離於該値，據此，Y軸方向的 干涉器的干涉器光束即使在晶圓載台的移動中中斷而再度 進行重設，亦能進行高精度的曝光動作。因此，前述線性 編碼器的測量精度並不需要特別高，只要具有能夠將晶圓 載台WST1(或WST2)移動至投影光學系統PL的光軸AX( 投影中心）的正下方之基準標記板FM1上的基準標記MK1， MK3所來到的位置程度的精度即足夠。 接著，以和前述相同之方式，進行其後之對晶圓載台 WST1上的晶圓W1的步進掃描方式的曝光動作。 另一方面，結束曝光動作的晶圓載台WST2，係自曝 光結束位置移動至右側之晶圓交換位置。該右側晶圓交換 位置，係與前述左側晶圓換位置相同，爲設定成基準標記 板FM2上的基準標記MK2能來到對準系統ALG2之下的 ___28_____— 一 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 550668 A7 ------Β7____ 五、發明說明（） 狀態’並實施前述晶圓交換動作與對準程序，而在晶圓載 台WST1側形成等待著晶圓W1的曝光動作的結束之狀態 。當然，干涉器系統的測長軸BI3Y的干涉器的重設動作 ’係在依對準系統ALG2的基準標記板FM2上的標記檢測 之前實施。 本實施形態，係連續且重覆進行此種晶圓載台WST1， WST2的並行處理動作。 又，本實施形態，如前所述，由於係使用2個晶圓載 台WST1，WST2同時並行處理不同動作，因此在一載台進 行的動作有可能會對另一載台的動作造成影響（干擾）。因 此’載台控制系統19係根據主控制裝置20的指示，而以 下述方式調整晶圓載台WST1，WST2的動作。 以下，依序說明在圖4所示之時間1、T2中所進行的 載台的動作之調整。 在圖4的時間儿中，係進行如前述的步進掃描方式的 曝光，並對晶圓載台WST1上的晶圓W1的複數個曝光照 射區域SA，例如以圖5(A)所示之交互掃描，來依序轉印 標線片R的圖案。與此並行，進行如前述之EGA方式的 晶圓對準，此時，係例如圖5(B)所示，依序檢測晶圓載台 WST2上的晶圓W2上所形成之複數個對準標記(對準標記 曝光照射區域的對準標記)之位置。 ' 此處，在晶圓載台WST1側所進行的掃描曝光中，由 於係以等速同步移動晶圓載台WST1與標線片載台RST於 掃描方向（Y軸方向），故晶圓載台WST1的動作並不影響 _____29__ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----卜訂---------線—· (請先閱讀背面之注意事項再填寫本頁) A7 550668 ______B7_ ____ 五、發明說明（4 ) 晶圓載台WST2。但是，該掃描曝光前後的曝光照射間之 步進時所進行的晶圓載台WST1的掃描方向的加減速動作 、或非掃描方向的移動動作中，則爲了加速或減速晶圓載 台WST1，因此晶圓載台WST1的動作即可能影響晶圓載 台 WST2。 另一方面，在晶圓載台WST2上的晶圓W2上進行標 記檢測之際，由於係將對準標記對準於對準系統而在晶圓 載台WST2的靜止狀態下進行標記檢測，故晶圓載台 WST2的動作不影響晶圓載台WST1。但是，在結束一個對 準標記的檢測，爲了將下一個對準標記定位於對準系統的 視野內而進行移動晶圓載台WST2之標記間步進動作之際 ，由於晶圓載台WST2之加速、減速將成爲晶圓載台 WST1的干擾之重要因素。 另一方面，於時間τ2中，由於係進行於上述時間Ti 進行的並形動作，及晶圓載台WST1與晶圓載台WST2之 關係的交換動作，故存在同樣之情形。 在此前提下，載台控制系統19，根據主控制裝置20 的指示而實施以下第1〜第4方法之載台的移動控制動作 〇 〈第1方法〉 首先依據圖6(A)〜圖6(c)，來說明於圖4的時間几 所進行的第1方法。 圖6(A)係表不晶圓載台WST1的掃描方向（γ軸方向） 的速度的時間變化，圖6(B)係表示晶圓載台WST1的非掃 ____32___ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂--- ;線 A7 550668 五、發明說明（&gt;7) (請先閱讀背面之注意事項再填寫本頁) 描方向（X軸方向）的速度的時間變化，圖6(c)係表示晶圓 載台WST2的速度的時間變化(任意的移動方向）。又，雖 省略圖示，但標線片載台RST ’係顯不與圖6(A)所示之晶 圓載台WST1的掃描方向的速度的時間變化相同（以投影倍 率的倒數（1/ Θ )倍的加速度進行加速、減速，且以1/ /3 倍的速度等速移動）之速度的時間變化。 此外，圖6(A)〜圖6(C)所示之符號tl〜t6，Al5八2與 圖5(A)、圖5(B)內所示之符號相對應。亦即，在t2，t4，t6 的範圍中，晶圓載台WST1及標線片載台RST係一邊以等 速動於掃描方向，一邊曝光。此外，在tl，t3, t5的範圍中 ，晶圓載台WST1 —邊於掃描方向進行加速或減速動作， 一邊在非掃描方向進行加速、等速、減速動作。其結果， 在tl，t3, t5的範圍中，係沿著圖5(A)所示之U字狀的路徑 ，曝光區域IA的中心(投影光學系統PL的光軸中心)對晶 圓W1進行相對移動。又，實際上曝光區域IA爲固定，而 晶圓W1爲移動，但方便上，圖5(A)係表示出曝光區域IA 之此方爲移動之狀態。又，圖6(A)、圖6(B)係與前述習知 例之圖12(A)、圖12(B)相同。 此外，在圖6(C)的Al5 A2的範圍，晶圓載台WST2係 在靜止狀態下藉對準系統ALG2進行對準標記的檢測(觀察 )(參閱圖5(B))，其他之部份則進行晶圓載台WST2之前述 °標記間之步進動作。 比較該圖6(C)及前述圖12(C)可知，明顯地呈現 VfVmax、角度a &lt; a r，因此，第1方法中，載台控制系 __31__^__ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 550668 ___B7____ 五、發明說明（P ) 統19係與相對於晶圓載台WST1上的晶圓wi上掃描曝光 中的標線片載台RST與晶圓載台WST1之等速移動(第1 移動動作)並行，且在相對於晶圓W2的晶圓對準之用的晶 圓載台WST2的標記間之步進之際的移動速度、及加速度 設置上限，據此，一邊對晶圓載台WST2下達用以抑制晶 圓載台WST1的控制性能下降的限制要件，同時實施標記 間之步進動作(第2移動動作）。 據此，即能抑制在EGA晶圓對準時因晶圓載台WST2 之移動動作而產生之機體的振動等，抑制因該振動等之干 擾造成載台位置、速度之控制精度要求既定値以上之掃描 曝光中之晶圓載台WST1之控制性能降低。 又，上述說明中，雖對晶圓載台WST2的標記間步進 動作時之移動速度及加速度（含減速度）同時設一上限，但 並不限於此，亦可僅對其中之一設置上限。例如在僅對加 速度(包含減速度)設置上限時，由於晶圓載台WST2的加 速度時所產生之反作用力降低，因此而能抑制機体的振動 至爲明確。另一方面，在僅對速度設置上限時，能縮短進 行加速、減速的時間，抑制晶圓載台WST2的加減速時所 產生的反作用力所造成之機体的振動等。 〈第2方法〉 其次，依據圖7(A)〜圖7(C)說明於圖4的時間乃所 °進行的第2方法。 圖7(A)、圖7(B)係分別表示與前述圖6(A)、圖6(B) 相同之晶圓載台WST1的掃描方向（γ軸方向）、非掃描方 __ 32 ___ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I I I I I L- ^ -----I------ (請先閱讀背面之注意事項再填寫本頁) A7 550668 _ B7______ 五、發明說明（幻） 向（X軸方向）之速度的時間變化。此時，標線片載台RST 的速度之時間變化係與前述相同。圖7(A)〜圖7(c)所示之 符號tl〜t6, Al5 A2係與前述同樣的與圖5(A)、圖5(B)內所 示之符號相對應。 此外，在圖7(C)的Al5八2的範圍中，晶圓載台WST2 係在靜止狀態下進行以對準系統ALG2進行對準標記的檢 測(觀察）。該第2方法中，載台控制系統19係在晶圓載台 WST1進行掃描曝光時，係使晶圓載台WST2恒成靜止狀 態之方式，使晶圓載台WST2僅移動與習知相同的距離Sl( 參閱圖12(C))之際，於該移動結束前即開始曝光動作時， 係如圖7(C)所示，使晶圓載台WST2的移動在曝光中停止 ，而在曝光結束後開始再度移動。亦即，在使晶圓載台 WST2僅移動距離S!之際，係分割成S3與距離S4而分複 數次進行移動。該移動係與習知同樣地，以最高速度、最 高加速度來進行。 如前所述，第2方法中，載台控制系統19係與相對於 晶圓載台WST1上的晶圓W1上掃描曝光中的標線片載台 RST與晶圓載台WST1之等速移動(第1移動動作)並行， 在相對晶圓W2的晶圓對準之用的晶圓載台WST2的標記 間步進之際，因應於晶圓載台WST1的動作狀況而進行分 割成複數次的步進移動之動作，據此，一邊對晶圓載台 WST2下達用以抑制晶圓載台WST1之控制性能下降的限 制要件，一邊實施標記間步進動作(第2移動動作）。 據此，即能抑制至少要求載台的位置、速度的控制精 ______33____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) &quot; _ I I I I I I I I I I -----I I I I --- (請先閱讀背面之注意事項再填寫本頁) A7 550668 _B7 _ 五、發明說明（) 度爲既定値以上的掃描曝光中的晶圓載台WST1之控制性 能，因進行EGA晶圓對準的晶圓載台WST2的移動動作所 產生之機體振動等所造成的下降。 又，圖7(C)中，由於在晶圓載台WST1側進行掃描曝 光之期間，係將晶圓載台WST2恆維持於靜止狀態之關係 ，因此圖中會產生以12所示的待機時間。 此外，如上述般，在晶圓載台WST1側進行掃描曝光 之期間，由於晶圓載台WST2側係維持待機狀態(靜止狀態 )，故並不產生來自移動晶圓載台WST2之線性馬達的發熱 。因此，由於能抑制在晶圓載台WST1側的掃描曝光期間 ，所產生之晶圓載台WST1周圍的環境氣氛(例如空氣）之 溫度波動(空氣波動），故能維持雷射干涉器（16、46)的測量 精度、進而能良好的維持晶圓載台WST1的位置控制精度 〇 〈第3方法〉 其次，依據圖8(A)〜圖8(C)說明圖4的時間乃所進 行的第3方法。 如前所述，第2方法中，由於待機時間川12等的產生 ，有時會產生在晶圓載台WST1側的步進掃描方式之曝光 動作結束時，晶圓載台WST2側的對準測量動作尙未結束 之情形，而可能降低全体之生產率。由防止此種情形產生 之觀點所進行的方法，即是此第3方法。 圖8(A)、圖8(B)係分別表示與前述圖6(A)、圖6(B) 相同之晶圓載台WST1的掃描方向(γ軸方向）、非掃描方 34 本紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐） &quot; ^ &quot; -- (請先閱讀背面之注意事項再填寫本頁) irt/1 · --線· A7 550668 五、發明說明（β ) 向（X軸方向）之速度的時間變化。此時’標線片載台RST 的速度之時間變化與前述相同。圖8(A)〜圖8(C)所示之符 號tl〜t6, A!，A2係與前述同樣地與圖5(A)、圖5(B)內所示 之符號相對應。 此外，在圖8(C)的Al5人2的範圍中，晶圓載台WST2 係在靜止狀態下以對準系統ALG2進行對準標記的檢測(觀 察）。該第3方法中，載台控制系統19，在晶圓載台WST1 側對晶圓W1的掃描曝光中（晶圓載台WST1與標線片載台 RST的等速移動(第1移動動作）中），係對晶圓載台\\^丁2 下達完全不進行加速、減速動作之第1限制要件，甚至即 使以最高速度移動，亦無法獲取所需之標記間步進距離時 ，在對晶圓W1進行掃描曝光之期間，爲能以等速而移動 晶圓載台WST2，係下達使移動速度(步進速度)最佳化之第 2限制要件，來實施步進動作(第2移動動作）。 如前所述，第3方法，能抑制掃描曝光中晶圓載台 WST1之控制性能惡化之主要因素，亦即因晶圓載台WST2 的對準測量動作中載台的移動所造成之干擾，且能提昇全 體的生產率。 無論使用以上說明之第1〜第3方法之任一方法，皆 能抑制因移動晶圓載台WST2至下一個對準標記的觀察位 置的移動動作，所造成之以照明用光IL掃描曝光晶圓W1 J時載台掃描移動之控制性能的下降，據此，能以良好之精 度將標線片圖案轉印至晶圓W1上。 〈第4方法〉 __35 ___ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------------^訂·--------—AW. (請先閱讀背面之注意事項再填寫本頁) A7 550668 ____ B7_____^ 五、發明說明（W) 接著，依據圖9(A)〜圖9(C)說明於圖4的時間凡之 區間所進行的第4方法。 圖9(A)係表不晶圓載台WST1的掃描方向(Y軸方向) 的速度的時間變化，圖9(B)係表示晶圓載台WST1的非掃 描方向（X軸方向）的速度的時間變化，圖9(C)係表示晶圓 載台WST2的速度的時間變化(任意的移動方向）。又，雖 省略圖示，但標線片載台RST係顯示與圖9(A)所示之晶圓 載台WST1的掃描方向的速度的時間變化相同（以投影倍率 的倒數（1//5)倍的加速度進行加速、減速，且以1//5倍 的速度進行等速移動）之速度的時間變化。 此外，圖9(A)〜圖9(C)所示之符號tl〜t5, Al5人2係 與圖5(A)、圖5(B)內所示之符號相對應。各符號所表示之 意涵與前述相同。 該第4方法，除了能抑制晶圓載台WST1側之掃描曝 光中的步進掃描移動之控制性能的下降之外，就以良好之 精度維持對準標記觀察中的晶圓載台WST2側的停止狀態 之觀點而言，具有對晶圓載台WST1側的移動動作亦能施 以限制要件之特徵。 亦即，該第4方法中，載台控制系統19，與前述第1 方法同樣的，在晶圓載台WST1側對晶圓W1進行掃描曝 光時，係對晶圓載台WST2設置速度、加速度的上限，以 ^使其進行標記間之步進動作 除此之外，載台控制系統19，在圖9(C)中的Au八2所 示之區間，與進行要求既定精度以上控制性能之以對準系 ------- 36 ___ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------------.1 訂」-------線 — (請先閱讀背面之注意事項再填寫本頁) A7 550668 五、發明說明（β) 統ALG2來檢測晶圓W2上的對準標記時的晶圓載台 WST2的動作(第1移動動作)並行，進行以步進掃描方式來 使晶圓載台WST1上所裝載之晶圓W1上的複數個曝光照 射區域曝光時，曝光照射間步進時之非等速移動動作(第2 移動動作）。此時，載台控制系統19，係一邊對晶圓載台 WST1下達設置加速度上限的限制要件，一邊以非等速移 動。因此，即使晶圓載台WST1進行以非等速之移動(伴隨 著加減速之移動），因晶圓載台WST1之曝光照射間步進時 的移動動作，而造成以對準系統ALG2進行檢測之晶圓 W2上的對準標記時之晶圓載台WST2的靜止狀態維持動 作之精度的下降情形，亦能獲得抑制。據此，即能提昇對 準測量精度，甚至提昇標線片R與晶圓W2的重疊精度。 又’上述說明係例舉圖4的時間Tl區間所進行的同時 並行處理之情形，但對於在晶圓載台WST1側進行EGA方 式的晶圓對準動作、在晶圓載台WST2側進行步進掃描方 式的曝光動作之時間T2，亦能與上述第1〜第3方法同樣 的’抑制W ί市描曝光中的晶圓載台WSΤ2的干擾。此外， 與上述第4方法同樣的，能提昇檢測晶圓wi上的標記之 對準測量精度。 此外’本貫施形態之曝光裝置100，與依序進行基板 交換、晶圓對準及曝光動作之情形相較，能藉由兩個的晶 :) _ 圓載台WST1、晶圓載台WST2的同時並行處理，維持高 生產率。 又’上述實施形態中，作爲第1〜第3方法，係說明 __—— —_37 __ 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公爱） (請先閱讀背面之注意事項再填寫本頁) · -丨線· A7 550668 _____.__B7_ 五、發明說明（4 ) (請先閱讀背面之注意事項再填寫本頁) 線 有關與對晶圓載台WST1上的晶圓W1上的掃描曝光中的 標線片載台RST與晶圓載台WST1之等速移動(第1移動 動作）並行，進行對晶圓W2的晶圓對準用的晶圓載台 WST2的標記間之步進動作，亦即進行以對準系統ALG2 檢測晶圓W2上的複數標記之用的載台位置來作爲期望之 目標位置，而移動晶圓載台WST2之動作(第2移動動作) 的情形，但並不限於此，在與對一晶圓載台上的晶圓的掃 描曝光並行，進行另一晶圓載台上的晶圓交換之情形時， 亦可藉由採行與前述第1〜第3方法相同之載台控制方法 ’而在移動該另一晶圓載台至期望目目標位置的晶圓交換 位置之際，防止掃描曝光中一晶圓載台的控制性能的下降 。又，上述實施形態中，雖說明晶圓交換位置，係自晶圓 載台上卸載晶圓之卸載位置，且用以裝載新晶圓於晶圓載 台上的裝載位置之情形，但並不限於此，卸載位置與裝載 位置亦可分別設置。此時，將至少一方的位置作爲期望之 目標位置來移動晶圓載台時，亦能有效地採用與前述第i 〜第3方法相同之載台控制方法。 又，上述實施形態中，作爲標記檢測系統的對準系統 ALG1，ALG2，雖使用了 FIA系統的對準感測器，但本發 明並不限於此。亦即，作爲標記檢測系統，亦可使用不隨 著晶圓載台的移動之可測量的所謂外差式LIA系統的對準 ^感測器、或WO098/39689號公報所揭示之雙重栅方式之感 測器。此外，即使係晶圓載台的移動爲進行標記測量之必 要條件的所謂LSA系統、或零差式UA系統的對準感測器 一 _38_____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱1 &quot; 550668 A7 -~_____B7 __ 五、發明說明（W ) ’亦能藉由設置前述等速移動等的限制條件，來作爲本發 明之曝光裝置之標記檢測系統(對準感測器)而使用。 此外，上述實施形態中，雖係說明本發明應用於具有 兩個的對準系統(亦即，一晶圓載台係在一的對準系統與投 W光學系統PL之間移動’另一'晶圓載台係在另一對準系 統與投影光學系統PL之間移動之類型)之雙晶圓載台方式 的掃描步進器之情形，但本發明之曝光裝置並不限於此。 亦即，本發明亦能有效地應用於具有1個對準系統(亦即， 兩個的晶圓載台係在投影光學系統與對準系統之間交互替 換之類型)之雙晶圓載台方式的掃描步進器。 作爲曝光裝置的用途，並不限於半導体製造用之曝光 裝置，亦可廣泛使用於例如，將液晶顯示元件圖案轉印至 方型玻漓面板之液晶用曝光裝置、或用以製造之薄膜磁頭 、微機械及DNA晶片等之曝光裝置。此外，本發明不僅能 應用於至製造半導体元件等的微元件，亦能使用於光曝光 裝置、EUV曝光裝置、X射線曝光裝置、及電子束曝光裝 置等所使用之用以製造標線片或光罩，將電路圖案轉印至 玻璃基板或矽晶圓等之曝光裝置。 此外，上述實施形態之曝光裝置之光源，不限於ArF 準分子雷射光源、KrF準分子雷射光源等的紫外線脈衝光 源，亦能使用產生g線(波長436nm)、i線(波長365nm)等 ^亮線之超高壓水銀燈。 此外，亦可使用將DFB半導体雷射或光纖雷射所發出 之紅外線域、或可視域之早一^波長雷射光，以例如摻雜有 39 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------裝· — (請先閱讀背面之注意事項再填寫本頁) 卜訂--- •線 A7 550668 五、發明說明（〇 ) 餌（或餌與鏡雙方）的光纖放大器加以放大’使用非線形光 學結晶加以波長轉換成紫外光之高諧波。此外，投影光學 系統的倍率不限於縮小系統，亦可使用等倍及放大系統之 任一者。 《元件製造方法》 接著，說明在微影製程使用上述曝光裝置之元件之製 造方法之實施形態。 圖10係顯75兀件（1C或LSI寺的半導体晶片、液晶面 板、CCD、薄膜磁頭、微機械等）之製造例之流程圖。如圖 10所示，首先，於步驟201中，進行元件之功能、性能設 計（例如半導体元件之電路設計等），並進行用以實現該功 能之圖案設計。接著，於步驟202(光罩製造步驟）中，製作 形成有所設計之電路圖案之光罩。另一方面，於步驟203( 晶圓製造步驟），使用矽等之材料製造晶圓。 接著，於步驟204(晶圓處理步驟）中，使用在步驟201 〜步驟203所準備的光罩及晶圓，如後述般地，藉由微影 技術等來形成實際電路於晶圓上。然後，於步驟205(元件 組裝步驟）中，使用在步驟204所處理之晶圓進行元件組裝 。此步驟205中，視需要包含有切割製程、結合製程、及 封裝製程(晶片封裝)等製程。 最後，於步驟2〇6(檢查步驟）中，進行在步驟2〇5所作 j成的元件之動作確認測試、耐久測試等的檢查。經過如此 之製程後即完成元件而可出貨。 圖11係表示半導体元件之上述步驟204之詳細流程 ______ 40______ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ' 一 ' ----1------------------------*5^--- (請先閱讀背面之注意事項再填寫本頁) A7 550668 _______B7____ 五、發明說明（β ) 之一例。於圖11中，於步驟211(氧化步驟)係使晶圓表面 氧化。於步驟212(CVD步驟）中，係形成絕緣膜於晶圓表 面。於步驟213(電極形成步驟）中，係藉由蒸鍍來形成電極 於晶圓上。於步驟214(離子植入步驟），係植入離子於晶圓 。以上之各步驟211〜步驟214，構成晶圓處理之各階段的 前處理製程，於各階段中視所需之處理來選擇實施。 於晶圓製程的各階段中，當結束上述前處理製程，即 如下般地實施後處理製程。該後處理製程，首先於步驟 215(光阻形成步驟）中，係塗佈感光劑於晶圓。接著，於步 驟216(曝先步驟）中’係藉由以上說明之微影系統（曝光裝 置)及曝光方法將光罩之電路圖案轉印於晶圓。其次，於步 驟217(顯影步驟）中，係顯像已曝光之晶圓，於步驟218( 蝕刻步驟）中，藉由蝕刻來除去殘留有光阻部份以外部份的 露出構件。接著，於步驟219(光阻除去步驟）中，去除已蝕 刻完成所不須之光阻。 藉由重覆此等前處理製程與後處理製程，晶圓上形成 多重電路圖案。 右使用以上說明之本實施形態之元件製造方法的S舌， 由於曝光製程(步驟216)中係使用上述實施形態之曝光裝置 ’故能進行局生產率的曝光。因此，能提昇形成有微細圖 案的高集積度微元件的生產性。 ° [發明效果] 如上述之說明，根據本發明之載台裝置，能充份持續 維持高生產率，達成各載台所要求的控制性能。 _________41 ____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂： -線- A7 550668 _B7_ 五、發明說明（¥。） (請先閱讀背面之注意事項再填寫本頁) 此外，根據本發明之曝光裝置，能充份持續維持曝光 製程中的高生產率，具有能確實達成各載台在進行動作時 所要求之精度的功效。 此外，根據本發明之元件製造方法，具有能提昇元件 之生產性之功效。 ___42 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）In addition, although illustration is omitted, the projection optical system PL, the alignment system ^ ALG1, and ALG2 each have an auto-focus / auto-leveling measurement mechanism for investigating the focus position (hereinafter referred to as "AF / AL system"). In this way, the projection optical system PL and the alignment systems ALG1 and ALG2 are respectively equipped with AF / AL ________24_ __ This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back first (Fill in this page again) Order ·-丨 Line _ A7 550668 5. The structure of the exposure settings of the invention description (β) system has been disclosed in detail in, for example, Japanese Unexamined Patent Publication No. 0-214783, which is familiar and is omitted here. Further explanation. Next, with reference to Fig. 4, the flow of the parallel surface operation using the wafer loaded from WST1 and WST2 by the exposure apparatus 100 as described above will be briefly described. Here, for the sake of convenience, the interval of time Tε in FIG. 4 is explained. First, on a wafer stage WST2 below the projection optical system PL, the wafer W2 is exposed in a step-and-scan manner (to be described later), and in parallel with this, the predetermined left wafer exchange position (the loading position and the Unloading position), the wafer is changed between the wafer stage WST1 and a transfer system (not shown). Through this wafer parent replacement, the wafer W1 is loaded on the wafer stage WST1, and here, it is assumed that the residual rotation error of the wafer w1 is almost zero. Here, the left wafer exchange position is determined, for example, by the alignment system ALG1 to determine the position where the reference mark MK2 on the reference mark plate FM1 can be detected. In this case, the wafer alignment measurement operation is performed on the wafer stage WST1 after the wafer exchange. In addition, the position control of the wafer stage WST2 during the exposure operation is performed based on the measurement axes of the length measuring axes BI2X and BI2Y of the interferometer system, and the wafer stage WST1 performs wafer exchange and wafer alignment measurement operations. Position control is based on the measurement of the measuring axis BI1X and BI1Y of the interferometer system. At the above-mentioned left wafer change position, the reference mark MK2 on the reference mark plate FM1 of the wafer stage WST1 is positioned directly below the alignment system ALG1. Therefore, the stage control system 19 is based on the instructions of the main control device 20, and before the reference mark MK2 is detected by the alignment system ALG1, the 25 paper standards are applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm). * &quot; IIIII — II —- I I--II I --- · II I ----— line —-- (Please read the precautions on the back before filling this page) A7 550668 5. Description of the invention () Reset of the interferometer for the long axis BI1Y of the interferometer system. (Please read the precautions on the back before filling in this page.) After the above wafer exchange and reset of the interferometer, on the wafer stage WST1 side, for example, EGA (Enhanced Full Wafer Alignment) wafers are used. Align and calculate the alignment coordinates of each exposure irradiation area on the wafer W1. Specifically, the interferometer system (length measurement axis BI1X, BI1Y) is used to manage the position of the wafer stage WST1, and to use the design exposure arrangement data (alignment mark position data) as a reference while managing the position of the wafer stage WST1. The wafer stage WST1 is sequentially moved, and based on the detection result of the alignment marks attached to the alignment exposure irradiation area of the alignment system ALG1, and the measurement results of the interferometer system (length measurement axis BI1X, BI1Y) during the detection, A plurality of position coordinates of the exposure irradiation area on the wafer wi are calculated respectively, and based on these calculation results and design coordinate data of the exposure irradiation arrangement, all the exposure irradiation arrangement data are calculated by the statistical calculation of the least square method. The operation of each part during the EGA is controlled by the main control device 20, and the calculation is performed by the main control device 20. In this case, the position of the wafer stage WST1 is controlled by the stage control system in accordance with an instruction from the main control device 20. In addition, it is preferable that the calculation result can be converted into a coordinate system based on the position of the reference mark MK2 of the reference plate FM1. During the wafer exchange and wafer alignment measurement operations on the wafer stage WST1 side, the wafer stage WST2 side continuously exposes the wafer W2 to step scanning. Specifically, it is the same as the aforementioned wafer W1 side, in which the wafer alignment of the EGA method is performed in advance, and the exposure irradiation arrangement data on the wafer W2 obtained based on the result (using the reference specimen paper on the reference mark plate fmi) The scale is applicable to the China National Standard (CNS) A4 specification (210 X 297 mm) &quot; 'A7 550668 ________B7______ V. Description of the invention (β) Recording MK2 as the reference), sequentially moving the exposure area on the wafer W2 After reaching the optical axis of the projection optical system PL, the reticle stage RST and the wafer stage WST2 are scanned synchronously in the scanning direction at each exposure of the exposure irradiation area, and scanning exposure is performed accordingly. The operation of each part of the scanning exposure of the wafer W2 is also controlled by the main control device 20, and the position of the wafer stage WST2 is controlled by the stage control system 19 according to the instruction of the main control device 20. In the above two wafer stages WST1 and WST2, the exposure process and wafer exchange and alignment processes are performed in parallel. Since the wafer exchange and alignment processes generally end first, the exposure operation on the wafer stage WST2 side is completed. The wafer stage WST1 is in a standby state. Then, when the exposure operation on the wafer W2 is completed, the movement of the wafer stages WST1 and WST2 is started. Next, the wafer stage WST1 is moved to the position where the reference marks MK1 and MK3 on the reference mark plate FM1 directly below the optical axis AX (projection center) of the projection optical system PL reach, but during this movement, The interferometer beam of the long axis BI1Y will not be incident on the moving mirror 96Y of the wafer stage WST1. Therefore, after this time, the stage control system 19 controls the crystal according to the measurement of the interferometer 16 having a length measurement axis BI1X and the measurement of an unillustrated linear encoder according to an instruction from the main control device 20. The position of the round stage WST1. Then, the main control device 20 uses a graticule (not shown) to align the microscope's reference marks MK1, MK3 on the measurement fiducial mark plate FM1 and the relative positional relationship between the graticule marks on the corresponding graticule R Previously, the interferometer 46 having the length-measuring axis BI2Y was reset. The reset action can be used next time. 27__ This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public love). 1 1 I (Please read the precautions on the back before filling this page)-Order i- 丨 line · A7 550668 ____B7 ___ 5. The description of the invention (&gt; 〇 The long-axis interferometer beam used is irradiated to the moving stage 96Y of the wafer stage WST1.) (Please read the note on the back first Please fill in this page again.) • Lines • As mentioned above, the reason that the high-precision alignment can be performed even when the interferometer is reset is because the reference on the reference mark plate FM1 is detected by the alignment system ALG1. After the MK2 is marked, the aforementioned wafer alignment by the Ega method is performed, and a hypothetical position calculated based on the detection result of the alignment mark of the alignment exposure irradiation area of the alignment system ALG1 (the exposure of each exposure irradiation area on the wafer W1) Coordinate position), to be converted into the position coordinate of the coordinate system based on the reference mark MK2. The relative distance between the reference mark and the position to be exposed is obtained at this point in time, so as long as the Quasi-display The mirror obtains the correspondence between the exposure position and the reference mark position, and adds the above relative distance to the 値. Based on this, the interferometer beam of the interferometer in the Y-axis direction is interrupted and reset again during the movement of the wafer stage. High-precision exposure can be performed. Therefore, the measurement accuracy of the aforementioned linear encoder does not need to be particularly high, as long as it has a mechanism capable of moving the wafer stage WST1 (or WST2) to the optical axis AX (projection center) of the projection optical system PL. The accuracy of the position to which the reference marks MK1 and MK3 on the reference mark plate FM1 directly below is sufficient. Next, in the same manner as described above, the subsequent steps for the wafer W1 on the wafer stage WST1 are performed. On the other hand, the wafer stage WST2 after the exposure operation is moved from the exposure end position to the right wafer exchange position. The right wafer exchange position is the same as the left wafer exchange position described above. To set the reference mark MK2 on the reference mark plate FM2 to come under the alignment system ALG2 ___28_____ — a paper size applicable to Chinese national standards CNS) A4 specification (210 X 297 mm) 550668 A7 ------ B7____ 5. Description of the invention () State and implement the aforementioned wafer exchange action and alignment procedure, and wait on the wafer stage WST1 side The state of completion of the exposure operation of the wafer W1. Of course, the reset operation of the interferometer of the length measuring axis BI3Y of the interferometer system is performed before the mark detection on the reference mark plate FM2 of the alignment system ALG2. This implementation In this mode, the parallel processing operation of such wafer stages WST1 and WST2 is performed continuously and repeatedly. In addition, as described above, since two wafer stages WST1 and WST2 are used to simultaneously process different operations in parallel, therefore, An action performed on one carrier may affect (interference) the action of another carrier. Therefore, the 'stage control system 19 adjusts the operations of the wafer stages WST1 and WST2 in the following manner in accordance with an instruction from the main control device 20. Hereinafter, the adjustment of the operation of the stage performed at time 1 and T2 shown in FIG. 4 will be described in order. In the time shown in FIG. 4, the exposure is performed in the step-and-scan manner as described above, and the plurality of exposure irradiation areas SA of the wafer W1 on the wafer stage WST1 are performed, for example, as shown in FIG. 5 (A). Scan to sequentially transfer the patterns of the reticle R. In parallel with this, wafer alignment using the EGA method described above is performed. At this time, for example, as shown in FIG. 5 (B), a plurality of alignment marks formed on the wafer W2 on the wafer stage WST2 are sequentially detected. (Alignment mark exposure alignment area). 'Here, in the scanning exposure performed on the wafer stage WST1 side, the wafer stage WST1 and the reticle stage RST are moved in the scanning direction (Y-axis direction) at the same speed and synchronously. The action does not affect _____29__ This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----- Buding --------- Line-(Please read the first Please fill in this page again for attention) A7 550668 ______B7_ ____ 5. Description of the invention (4) Wafer stage WST2. However, in order to accelerate or decelerate the wafer stage WST1 during the acceleration and deceleration of the wafer stage WST1 in the scanning direction of the wafer stage WST1 during the stepping between exposure irradiation before and after the scanning exposure, the crystal stage WST1 is accelerated. The movement of the round stage WST1 may affect the wafer stage WST2. On the other hand, when performing mark detection on the wafer W2 on the wafer stage WST2, since the alignment mark is aligned with the alignment system and the mark detection is performed while the wafer stage WST2 is stationary, the wafer is loaded on the wafer. The operation of the stage WST2 does not affect the wafer stage WST1. However, at the end of the detection of one alignment mark, in order to position the next alignment mark within the field of view of the alignment system, the step movement between the marks of the moving wafer stage WST2 is performed, due to the acceleration of the wafer stage WST2, Deceleration will be an important factor for interference from wafer stage WST1. On the other hand, at time τ2, the parallel operation performed at the above-mentioned time Ti and the exchange operation of the relationship between the wafer stage WST1 and the wafer stage WST2 are performed. Therefore, the same situation exists. Under this premise, the stage control system 19 implements the movement control operations of the stage 1 to 4 according to the instructions of the main control device 20 below. <First method> First, referring to FIGS. 6 (A) to 6 (c) The first method performed at the time of FIG. 4 will be described. Figure 6 (A) shows the time variation of the speed in the scanning direction (γ-axis direction) of wafer stage WST1, and Figure 6 (B) shows the non-scanning of wafer stage WST1 ____32___ This paper standard applies Chinese national standards ( CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling out this page) Order ---; line A7 550668 V. Description of the invention (&gt; 7) (Please read the precautions on the back before (Fill in this page) The time variation of the velocity in the scanning direction (X-axis direction) is shown in Fig. 6 (c), which shows the time variation of the velocity of the wafer stage WST2 (arbitrary movement direction). Although the illustration is omitted, the reticle stage RST ′ is not the same as the temporal change of the speed in the scanning direction of the wafer stage WST1 shown in FIG. 6 (A) (the reciprocal of the projection magnification (1 / Θ ) Times the acceleration and deceleration, and moves at the same speed at 1 // 3 times the speed). In addition, the symbols t1 to t6, Al5 and 82 shown in Figs. 6 (A) to 6 (C) correspond to the symbols shown in Figs. 5 (A) and 5 (B). That is, in the range of t2, t4, and t6, the wafer stage WST1 and the reticle stage RST are exposed while moving in the scanning direction at a constant speed. In addition, in the range of tl, t3, and t5, the wafer stage WST1-while accelerating or decelerating in the scanning direction, performs acceleration, constant velocity, and deceleration in the non-scanning direction. As a result, in the range of t1, t3, and t5, the wafer W1 is processed along the U-shaped path shown in FIG. 5 (A) and the center of the exposure area IA (the center of the optical axis of the projection optical system PL). Relative movement. In addition, the exposure area IA is actually fixed and the wafer W1 is moved. However, for convenience, FIG. 5 (A) shows that the exposure area IA is moved. 6 (A) and 6 (B) are the same as Figs. 12 (A) and 12 (B) of the conventional example. In addition, in the range of Al5 A2 in FIG. 6 (C), the wafer stage WST2 is used to perform alignment mark detection (observation) by the alignment system ALG2 in a stationary state (see FIG. 5 (B)), and other parts Then, the step between the aforementioned ° marks of the wafer stage WST2 is performed. Comparing this FIG. 6 (C) and the aforementioned FIG. 12 (C), it can be seen that VfVmax and angle a &lt; ar are clearly presented. Therefore, in the first method, the stage control system __31 __ ^ __ This paper standard is applicable to Chinese national standards ( CNS) A4 specification (210 X 297 mm) A7 550668 ___B7____ 5. Description of the invention (P) System 19 and reticle stage RST and wafer stage in scanning exposure on wafer wi on wafer stage WST1 The constant speed movement (first movement operation) of the stage WST1 is performed in parallel, and the upper limit of the movement speed and acceleration during the stepping between the marks of the wafer stage WST2 for wafer alignment with respect to the wafer W2, According to this, the wafer stage WST2 is issued with the restriction requirements for suppressing the degradation of the control performance of the wafer stage WST1, and at the same time, a step operation (second movement operation) between the marks is performed. According to this, it is possible to suppress the vibration of the body caused by the movement of the wafer stage WST2 when the EGA wafer is aligned, and to suppress the precision of the position and speed control of the stage due to the interference of the vibration and the like. The control performance of the wafer stage WST1 during the exposure is degraded. In the above description, although the upper limit of the moving speed and the acceleration (including the deceleration) during the stepping operation between the marks of the wafer stage WST2 is set at the same time, the upper limit is not limited to this, and only one of them may be set. For example, when only the acceleration (including deceleration) is set to an upper limit, the reaction force generated when the wafer stage WST2 is accelerated is reduced, so that it is possible to suppress the vibration of the body. On the other hand, when only the upper limit of the speed is set, the acceleration and deceleration time can be shortened, and the vibration of the body caused by the reaction force generated during the acceleration and deceleration of the wafer stage WST2 can be suppressed. <Second Method> Next, the second method performed at the time shown in FIG. 4 will be described with reference to FIGS. 7 (A) to 7 (C). Fig. 7 (A) and Fig. 7 (B) respectively show the scanning direction (γ-axis direction) and non-scanning side of the same wafer stage WST1 as that of Fig. 6 (A) and Fig. 6 (B). Paper size applies to China National Standard (CNS) A4 (210 X 297 mm) IIIII L- ^ ----- I ------ (Please read the precautions on the back before filling this page) A7 550668 _ B7______ V. Description of the Invention (Fantasy) The time variation of the speed in the (X-axis direction). At this time, the time variation of the speed of the reticle stage RST is the same as described above. The symbols t1 to t6 and Al5 A2 shown in Figs. 7 (A) to 7 (c) correspond to the symbols shown in Figs. 5 (A) and 5 (B) as described above. In addition, in the range of Al5 and Ba2 in FIG. 7 (C), the wafer stage WST2 is performed in a stationary state to perform alignment mark detection (observation) with the alignment system ALG2. In this second method, the stage control system 19 is configured to keep the wafer stage WST2 in a stationary state when the wafer stage WST1 performs scanning exposure, so that the wafer stage WST2 is moved only by the same distance S1 as it is known ( (See FIG. 12 (C)), when the exposure operation is started before the end of the movement, as shown in FIG. 7 (C), the movement of the wafer stage WST2 is stopped during the exposure, and after the exposure is completed, the movement is started again. mobile. In other words, when the wafer stage WST2 is moved only by the distance S !, the wafer stage WST2 is divided into S3 and the distance S4 and moved in plural times. This movement is performed at the highest speed and the highest acceleration, as is conventional. As described above, in the second method, the stage control system 19 moves at the same speed as the reticle stage RST and the wafer stage WST1 during the scanning exposure on the wafer W1 on the wafer stage WST1 (the first stage) (1 movement operation) In parallel, when stepping between the marks of the wafer stage WST2 for wafer alignment with respect to the wafer W2, it is divided into a plurality of step movements according to the operation condition of the wafer stage WST1. According to this operation, while placing a restriction on the wafer stage WST2 to suppress the decrease in the control performance of the wafer stage WST1, a step movement between marks is performed (second movement operation). According to this, it can suppress the control precision that requires at least the position and speed of the carrier ______33____ This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) &quot; _ IIIIIIIIII ----- IIII- -(Please read the precautions on the back before filling this page) A7 550668 _B7 _ V. Description of the invention () The control performance of the wafer stage WST1 in the scanning exposure above the predetermined threshold, due to the EGA wafer alignment The drop caused by the vibration of the body caused by the movement of the wafer stage WST2. Moreover, in FIG. 7 (C), during scanning exposure on the wafer stage WST1 side, the wafer stage WST2 is constantly maintained in a stationary state. Therefore, a standby time indicated by 12 is generated in the figure. In addition, as described above, during scanning exposure on the wafer stage WST1 side, since the wafer stage WST2 side is maintained in a standby state (stationary state), no heat is generated from the linear motor of the mobile wafer stage WST2. Therefore, since the temperature fluctuation (air fluctuation) of the ambient atmosphere (such as air) around the wafer stage WST1 generated during the scanning exposure on the wafer stage WST1 side can be suppressed, the laser interferometer (16, 46) can be maintained. ), And the position control accuracy of the wafer stage WST1 can be well maintained. <Third method> Next, the time shown in FIG. 4 will be described with reference to FIGS. 8 (A) to 8 (C), which is the third method performed. . As described above, in the second method, due to the generation of the standby time, etc., the step-and-scan method on the wafer stage WST1 side may cause the alignment measurement operation on the wafer stage WST2 side when the exposure operation ends.尙 Unfinished situation may reduce overall productivity. This method is the third method from the viewpoint of preventing such a situation. Fig. 8 (A) and Fig. 8 (B) respectively show the scanning direction (γ-axis direction) and non-scanning side of the wafer stage WST1 which is the same as the aforementioned Fig. 6 (A) and Fig. 6 (B). China National Standard (CNS) A4 Specification (210 X 297 mm) &quot; ^ &quot;-(Please read the precautions on the back before filling this page) irt / 1 ·-line · A7 550668 5. Description of the invention ( β) Time variation of velocity in (X-axis direction). At this time, the time variation of the speed of the reticle stage RST is the same as described above. The symbols t1 to t6, A !, and A2 shown in Figs. 8 (A) to 8 (C) correspond to the symbols shown in Figs. 5 (A) and 5 (B) as described above. In addition, in the range of Al5 person 2 in FIG. 8 (C), the wafer stage WST2 performs the alignment mark detection (observation) with the alignment system ALG2 in a stationary state. In this third method, the stage control system 19 scans and exposes the wafer W1 on the wafer stage WST1 side (the wafer stage WST1 and the reticle stage RST are moved at the same speed (first movement operation)). This is the first limitation that the wafer stage ^^ 2 is issued without acceleration or deceleration at all. Even when moving at the highest speed, the required step distance between marks cannot be obtained. During scanning exposure, in order to move the wafer stage WST2 at a constant speed, a second limitation requirement for optimizing the moving speed (stepping speed) is implemented to perform a stepping operation (second moving operation). As mentioned above, the third method can suppress the main factor that deteriorates the control performance of the wafer stage WST1 during scanning exposure, that is, the interference caused by the movement of the stage during the alignment measurement operation of the wafer stage WST2, and can Increase overall productivity. Regardless of using the first to third methods described above, the movement of the wafer stage WST2 to the observation position of the next alignment mark can be suppressed, and the wafer is exposed by scanning with the illumination light IL. At W1 J, the control performance of the scanning movement of the stage is reduced, and accordingly, the reticle pattern can be transferred to the wafer W1 with good accuracy. 〈Method 4〉 __35 ___ This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ------------------- ^ Order ·- ------— AW. (Please read the precautions on the back before filling out this page) A7 550668 ____ B7 _____ ^ V. Description of the Invention (W) Next, it will be explained in accordance with Figure 9 (A) ~ Figure 9 (C) The fourth method performed in the time interval of FIG. 4. FIG. 9 (A) shows the time change of the speed in the scanning direction (Y-axis direction) of the wafer stage WST1, and FIG. 9 (B) shows the time of the speed in the non-scanning direction (X-axis direction) of the wafer stage WST1. FIG. 9 (C) shows the time variation (arbitrary movement direction) of the speed of the wafer stage WST2. Although the illustration is omitted, the reticle stage RST shows the same temporal change in speed in the scanning direction of the wafer stage WST1 shown in FIG. 9 (A) (reciprocal of the projection magnification (1 // 5) Acceleration, deceleration, and constant speed movement at 1 // 5 times the speed). In addition, the symbols t1 to t5 shown in FIGS. 9 (A) to 9 (C), and the Al5 human 2 system correspond to the symbols shown in FIGS. 5 (A) and 5 (B). Each symbol indicates the same meaning as before. In the fourth method, in addition to suppressing the decrease in the control performance of the step scanning movement during the scanning exposure on the wafer stage WST1 side, the stopped state of the wafer stage WST2 side during the alignment mark observation is maintained with good accuracy. From a viewpoint, it has a feature that the moving requirements of the wafer stage WST1 side can also impose restrictions. That is, in the fourth method, the stage control system 19, similar to the first method described above, sets the upper limit of the speed and acceleration of the wafer stage WST2 when scanning and exposing the wafer W1 on the wafer stage WST1 side. In addition to using ^ to make a step motion between marks, the stage control system 19 is in a range shown in Au 8 2 in FIG. Standards ------- 36 ___ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ------------------. 1 Order "------- line— (Please read the precautions on the back before filling this page) A7 550668 5. Description of the invention (β) Wafer stage when the ALG2 system is used to detect the alignment mark on the wafer W2 The operation of WST2 (the first movement operation) is performed in parallel to perform a step-and-scan method to expose a plurality of exposure irradiation areas on the wafer W1 loaded on the wafer stage WST1. Move action (second move action). At this time, the stage control system 19 moves at a non-constant speed while placing restrictions on the acceleration limit of the wafer stage WST1. Therefore, even if wafer stage WST1 moves at a non-constant speed (accompanied by acceleration and deceleration), the movement of wafer stage WST1 during stepping between exposure and irradiation results in a crystal that is detected by alignment system ALG2. A decrease in the accuracy of the wafer stage WST2 in the stationary state maintaining operation during the alignment mark on the circle W2 can also be suppressed. According to this, the accuracy of the alignment measurement can be improved, and even the overlap accuracy of the reticle R and the wafer W2 can be improved. Also, the above description exemplifies the case of simultaneous and parallel processing performed in the time period T1 in FIG. 4, but for the wafer alignment operation of the EGA method on the wafer stage WST1 side and the step scanning on the wafer stage WST2 side The time T2 of the exposure operation of the method can also suppress the interference of the wafer stage WST2 during the exposure in the same manner as in the first to third methods described above. In addition, similar to the fourth method described above, the alignment measurement accuracy of the marks on the detection wafer wi can be improved. In addition, compared with the case where the substrate 100 is sequentially exchanged with the substrate exchange, wafer alignment, and exposure operations, the 'exposure device 100' can use two crystals :) _ At the same time as the round stage WST1 and the wafer stage WST2 Parallel processing to maintain high productivity. Also, in the above embodiment, as the first to third methods, it is explained that __—— —_37 __ This paper size applies the Chinese National Standard (CNS) A4 specification (21〇X 297 public love) (Please read the back Please note this page before filling in this page) ·-丨 Line · A7 550668 _____.__ B7_ 5. Description of the Invention (4) (Please read the notes on the back before filling this page) Line related to wafer W1 on wafer stage WST1 The reticle stage RST and the wafer stage WST1 are moved at the same speed (first movement operation) during the scanning exposure on the above, and the steps between the marks of the wafer stage WST2 for wafer alignment of the wafer W2 are performed. The operation is to move the wafer stage WST2 (the second movement operation) by using the stage position of the alignment system ALG2 to detect the plurality of marks on the wafer W2 as the desired target position. Not limited to this, in the case of performing wafer exchange on another wafer stage in parallel with scanning and exposure of a wafer on one wafer stage, the same method as in the aforementioned first to third methods can also be adopted. Stage control method 'while moving the other wafer stage to Purpose of the target position of the wafer exchange position occasion, prevent degradation of control performance in a scanning exposure of the wafer stage. In the above embodiment, the wafer exchange position is described as a case where the wafer is unloaded from the wafer stage, and is used to load a new wafer onto the wafer stage, but it is not limited to this. , Unloading position and loading position can also be set separately. In this case, when moving the wafer stage with at least one of the positions as a desired target position, the same stage control method as the i-th to third methods described above can be effectively used. In the above-mentioned embodiment, although the alignment systems ALG1 and ALG2 of the mark detection system use the alignment sensors of the FIA system, the present invention is not limited to this. That is, as a mark detection system, an alignment sensor of a so-called heterodyne LIA system that can be measured without moving with a wafer stage may be used, or a double-grid method disclosed in WO098 / 39689 Sensor. In addition, even if the movement of the wafer stage is an alignment sensor of the so-called LSA system or homodyne UA system, which is a necessary condition for mark measurement, _38_____ This paper standard applies to the Chinese National Standard (CNS) A4 specification (210 X 297 Public Love 1 &quot; 550668 A7-~ _____ B7 __ V. Description of the invention (W) 'It can also be used as the mark detection system of the exposure device of the present invention (alignment In addition, in the above embodiment, it has been described that the present invention is applied to an alignment system having two alignment systems (that is, a wafer stage is aligned between the alignment system and the optical system PL). The case where the “another” wafer stage is a scanning stepper of the dual wafer stage system that moves between another alignment system and the projection optical system (PL), but the exposure apparatus of the present invention is not limited to this. That is, the present invention can also be effectively applied to a dual-wafer stage method having one alignment system (that is, a type in which two wafer stages are alternately replaced between a projection optical system and an alignment system). Scanning stepper. The application of the exposure device is not limited to an exposure device for semiconductor manufacturing, and it can also be widely used in, for example, an exposure device for liquid crystals that transfers a pattern of a liquid crystal display element to a square glass panel, or a thin film magnetic head for manufacturing, Exposure devices for micromachines and DNA wafers. In addition, the present invention can be applied not only to the production of microdevices such as semiconductor devices, but also to light exposure devices, EUV exposure devices, X-ray exposure devices, and electron beam exposure devices. The exposure device used to make reticle or photomask, transfer circuit pattern to glass substrate or silicon wafer, etc. In addition, the light source of the exposure device of the above embodiment is not limited to ArF excimer laser light source, Ultraviolet pulsed light sources such as KrF excimer laser light sources can also use ultra-high-pressure mercury lamps that produce bright lines such as g-line (wavelength 436nm) and i-line (wavelength 365nm). In addition, DFB semiconductor lasers or optical fibers can also be used The infrared light emitted by the laser, or the visible light in the early one ^ wavelength of laser light, for example, is doped with 39 paper standards applicable to China National Standard (CNS) A4 regulations (210 X 297 mm) ------------- Equipped ·-(Please read the precautions on the back before filling in this page) Ordering --- • Line A7 550668 5. Description of the invention ( 〇) The optical fiber amplifier of the bait (or both the bait and the mirror) is amplified. 'Non-linear optical crystals are used to convert the wavelength to high harmonics of ultraviolet light. In addition, the magnification of the projection optical system is not limited to the reduction system, and equal magnification and magnification can be used Either of the systems. "Element Manufacturing Method" Next, an embodiment of a method of manufacturing the element using the above exposure device in a lithography process will be described. Fig. 10 shows 75 elements (1C or LSI's semiconductor wafer, liquid crystal panel, CCD, thin-film magnetic head, micro-machine, etc.). As shown in FIG. 10, first, in step 201, the function and performance design of the device (such as the circuit design of a semiconductor device) is performed, and a pattern design to realize the function is performed. Next, in step 202 (mask manufacturing step), a mask is formed to form a designed circuit pattern. On the other hand, in step 203 (wafer manufacturing step), a wafer is manufactured using a material such as silicon. Next, in step 204 (wafer processing step), the photomask and wafer prepared in steps 201 to 203 are used to form an actual circuit on the wafer by a lithography technique, as described later. Then, in step 205 (component assembly step), use the wafer processed in step 204 to perform component assembly. In this step 205, a cutting process, a bonding process, and a packaging process (chip packaging) are included as needed. Finally, in step 206 (inspection step), inspections such as the operation confirmation test and the endurance test of the element made in step 205 are performed. After such a process, the components are completed and can be shipped. Figure 11 shows the detailed process of the above step 204 of the semiconductor device. ______ 40______ This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 'One' ---- 1 ------- ----------------- * 5 ^ --- (Please read the notes on the back before filling this page) A7 550668 _______B7____ 5. An example of the description of the invention (β). In FIG. 11, the wafer surface is oxidized in step 211 (oxidation step). In step 212 (CVD step), an insulating film is formed on the wafer surface. In step 213 (electrode formation step), an electrode is formed on the wafer by evaporation. In step 214 (ion implantation step), ions are implanted into the wafer. Each of the above steps 211 to 214 constitutes a pre-processing process of each stage of the wafer processing, and is selected and implemented in each stage according to the required processing. In each stage of the wafer process, when the pre-processing process described above is ended, the post-processing process is performed as follows. In this post-processing process, first, in step 215 (photoresist formation step), a photosensitive agent is applied to the wafer. Next, in step 216 (exposure first step), the circuit pattern of the photomask is transferred to the wafer by the lithography system (exposure device) and the exposure method described above. Next, in step 217 (development step), the exposed wafer is developed, and in step 218 (etching step), the exposed members other than the photoresist portion are removed by etching. Next, in step 219 (photoresist removal step), the photoresist which is not necessary for the completion of the etching is removed. By repeating these pre-processing and post-processing processes, multiple circuit patterns are formed on the wafer. On the right, the S tongue of the element manufacturing method of the embodiment described above is used, and since the exposure process (step 216) uses the exposure apparatus of the embodiment described above, it is possible to perform local productivity exposure. Therefore, it is possible to improve the productivity of a high-integration micro-device in which a fine pattern is formed. [Inventive effect] As described above, according to the stage device of the present invention, it is possible to sufficiently maintain high productivity and achieve the control performance required for each stage. _________41 ____ This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) Order: -Line- A7 550668 _B7_ 5. Description of the invention (¥.) (Please read the precautions on the back before filling in this page.) In addition, the exposure device of the present invention can sufficiently maintain the high productivity in the exposure process, and has the accuracy required to achieve the accuracy required by each stage during operation efficacy. In addition, the device manufacturing method according to the present invention has the effect of improving the productivity of the device. ___42 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

550668 蔻 C8 D8 六、申請專利範圍 面獨立進行2維移動；以及 (請先閱讀背面之注意事項蒋填寫本頁) 載台控制系統，係控制前述兩載台並行之移動動作， 且在使一載台實施要求既定精度以上之控制性能的第1移 動動作時，邊對前述另一載台下達速度及加速度的至少一 方的上限値之限制，邊使其實施以非等速移動之第2移動 動作。 7、 一種曝光裝置，係邊相對能量束掃描基板邊進行曝 光’據以在前述基板上形成既定圖案，其特徵在於： 具備申請專利範圍第1〜6項中任一項之載台裝置； 前述第1移動動作，包含以前述能量束對前述一載台 上所1載之弟1基板進f了掃描曝光時之載台掃描移動； 前述第2移動動作，包含使前述另一載台移動至期望 目標位置之移動動作。 8、 如申請專利範圍第7項之曝光裝置，其中，進一步 具備用以檢測前述另一載台上所裝載之第2基板上所形成 之複數個標記的標記檢測系統；前述期望目標位置，包含 爲了以則述標記檢測系統檢測前述第2基板上的前述複數 個標記之載台位置、自前述另一載台上卸下前述第2基板 的卸下位置、及用以在前述另一基板上裝載新的基板的裝 載位置之其中之一。 9、 一種曝光裝置，係邊相對能量束掃描基板邊進行曝 光，據以在前述基板上形成既定圖案量，其特徵在於： 具備申日ra專利範圍弟6項之載台裝置，以及用以檢測 前述一載台上所裝載之第i基板上形成之複數個標記的標 __2 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐） 550668 A8 B8 C8 D8 六、申請專利範圍 記檢測系統；前述第1移動動作，包含以前述標記檢測系 統檢測前述第1基板上的標記時，前述一載台之動作； (請先閲讀背面之注意事項再塡寫本頁) 前述第2移動動作，包含以前述能量束對前述另一載 台上所裝載之第2基板上的複數個區劃區域進行掃描曝光 時，使下一區劃區域朝向前述能量束照射區域移動之前述 另一載台的移動動作。 10 · —種元件製造方法，係包含微影製程，其特徵在 於： 前述微影製程，係使用申請專利範圍第7〜9項中任一 項之曝光裝置來進行曝光。 3 本紙張尺度適用中國國家標準（CNS)A4規格(210 X 297公釐）550668 Coco C8 D8 6. The patent application scope independently performs 2D movement; and (please read the notes on the back first to complete this page). The carrier control system controls the movement of the two carriers in parallel, and When the carrier implements the first movement operation that requires control performance above a predetermined accuracy, the second carrier moves at a non-constant velocity while limiting the upper limit 値 of the speed and acceleration of the other carrier. Move action. 7. An exposure device for exposing while scanning a substrate with respect to an energy beam to form a predetermined pattern on the aforementioned substrate, characterized in that: it has a stage device according to any one of claims 1 to 6 of the scope of patent application; The first movement operation includes scanning and movement of the stage when the substrate 1 carried on the one carrier is scanned and exposed with the energy beam; the second movement operation includes moving the other stage to Expected movement of the target position. 8. The exposure device according to item 7 of the patent application scope, further comprising a mark detection system for detecting a plurality of marks formed on the second substrate mounted on the other stage; the aforementioned desired target position includes In order to detect the position of the plurality of marks on the second substrate by the mark detection system, a position for removing the second substrate from the other stage, and a position for removing the second substrate from the other substrate, One of the loading positions for loading a new substrate. 9. An exposure device for exposing while scanning a substrate with respect to an energy beam to form a predetermined pattern amount on the substrate, which is characterized by: a stage device with 6 items in the scope of the application of the patent of Ra. Marks of multiple marks formed on the i-th substrate loaded on the aforementioned stage __2 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 550668 A8 B8 C8 D8 6. Scope of patent application Note the detection system; the first movement includes the movement of the first stage when the mark detection system detects the mark on the first substrate; (Please read the precautions on the back before writing this page) The second The moving operation includes when the plurality of divisional areas on the second substrate loaded on the other stage are scanned and exposed with the energy beam, the other stage is moved to move the next divisional area toward the energy beam irradiation area. Moving action. 10-A component manufacturing method, including a lithography process, characterized in that the aforementioned lithography process uses an exposure device in any one of claims 7 to 9 of the scope of patent application for exposure. 3 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)
TW091116668A 2001-07-26 2002-07-26 Stage apparatus, exposure system and device production method TW550668B (en)

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