JP3180301B2

JP3180301B2 - Scanning exposure method, scanning exposure apparatus, and device manufacturing method using the method

Info

Publication number: JP3180301B2
Application number: JP28998592A
Authority: JP
Inventors: 健爾西
Original assignee: Nikon Corp
Current assignee: Nikon Corp
Priority date: 1992-10-28
Filing date: 1992-10-28
Publication date: 2001-06-25
Anticipated expiration: 2016-06-25
Also published as: JPH06140305A

Description

DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本発明は、例えば半導体集積回路
又は液晶表示素子等をリソグラフィ工程で製造する際に
使用される投影露光装置に関し、特に所謂スリットスキ
ャン露光方式で露光を行う投影露光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure apparatus used for manufacturing, for example, a semiconductor integrated circuit or a liquid crystal display device in a lithography process, and more particularly to a projection exposure apparatus for performing exposure by a so-called slit scan exposure method. .

【０００２】[0002]

【従来の技術】半導体素子又は液晶表示素子等をリソグ
ラフィ工程で製造する際に、露光光のもとでフォトマス
ク又はレチクル（以下「レチクル」と総称する）のパタ
ーン像を投影光学系を介して感光基板上に投影する投影
露光装置が使用されている。斯かる装置として、スリッ
トスキャン露光方式の投影露光装置が知られている。2. Description of the Related Art When a semiconductor device or a liquid crystal display device is manufactured by a lithography process, a pattern image of a photomask or a reticle (hereinafter, collectively referred to as a "reticle") is exposed through a projection optical system under exposure light. 2. Description of the Related Art A projection exposure apparatus that projects an image on a photosensitive substrate is used. As such an apparatus, a projection exposure apparatus of a slit scan exposure type is known.

【０００３】図６は従来のスリットスキャン露光方式の
投影露光装置を示し、この図６において、光源系１から
射出された露光光ＩＬは、ミラー２、視野絞り３、リレ
ーレンズ４、ミラー５及びコンデンサーレンズ６を経て
均一な照度でレチクル７を照明する。光源系１は、水銀
灯又はレーザー光源等の光源及びオプティカルインテグ
レータ等より構成されている。また、視野絞り３の配置
面とレチクル７の下面のパターン形成面とは共役であ
り、視野絞り３によりレチクル７のパターン形成面にス
リット状の照明領域が設定されている。この場合、レチ
クル７に平行な面内で図６に平行な方向をＸ方向、図６
に垂直な方向をＹ方向として、スリット状の照明領域の
長手方向がＹ方向に設定され、レチクル７とそのスリッ
ト状の照明領域との相対走査の方向はＸ方向であるとす
る。FIG. 6 shows a conventional projection exposure apparatus of the slit scan exposure type. In FIG. 6, exposure light IL emitted from a light source system 1 is mirror 2, field stop 3, relay lens 4, mirror 5 and mirror 5. The reticle 7 is illuminated with uniform illuminance through the condenser lens 6. The light source system 1 includes a light source such as a mercury lamp or a laser light source, an optical integrator, and the like. The arrangement surface of the field stop 3 and the pattern forming surface on the lower surface of the reticle 7 are conjugate, and a slit-shaped illumination area is set on the pattern formation surface of the reticle 7 by the field stop 3. In this case, the direction parallel to FIG. 6 in the plane parallel to the reticle 7 is the X direction, and FIG.
It is assumed that the longitudinal direction of the slit-shaped illumination area is set to the Y direction, and the direction of relative scanning between the reticle 7 and the slit-shaped illumination area is the X direction.

【０００４】レチクル７は、レチクル７にＸ方向及びＹ
方向への移動並びに回転を行うレチクルＸＹθステージ
８の上に保持され、レチクルＸＹθステージ８はレチク
ル側ベース９上に摺動自在に支持されている。レチクル
ＸＹθステージ８上の相対走査方向であるＸ方向の一端
に移動鏡１０が固定され、Ｘ軸用のレーザー干渉計１１
からのレーザービームが移動鏡１０により反射されてい
る。Ｘ軸用のレーザー干渉計１１は、移動鏡１０からの
レーザービームと参照鏡からのレーザービームとの干渉
ビームを光電変換することにより、レチクルＸＹθステ
ージ８のＸ方向の座標を検出している。また、レチクル
ＸＹθステージ８の相対走査の方向に垂直なＹ方向の座
標及び回転角は、図示省略した静電容量センサーにより
計測されている。Ｘ軸用のレーザー干渉計１１の計測座
標及びそれら静電容量センサーによる計測結果が主制御
系１２に供給され、主制御系１２はレチクルＸＹθステ
ージ８の移動速度、位置及び回転角を露光シーケンスに
応じて設定する。[0004] The reticle 7 is moved in the X direction and Y direction.
The reticle XYθ stage 8 is held on a reticle XYθ stage 8 that moves and rotates in the direction, and the reticle XYθ stage 8 is slidably supported on a reticle side base 9. A movable mirror 10 is fixed to one end of the reticle XYθ stage 8 in the X direction, which is a relative scanning direction, and a laser interferometer 11 for the X axis.
Is reflected by the moving mirror 10. The X-axis laser interferometer 11 detects the coordinates of the reticle XYθ stage 8 in the X direction by photoelectrically converting an interference beam between the laser beam from the movable mirror 10 and the laser beam from the reference mirror. The coordinate and the rotation angle in the Y direction perpendicular to the direction of relative scanning of the reticle XYθ stage 8 are measured by a capacitance sensor (not shown). The measurement coordinates of the X-axis laser interferometer 11 and the measurement results obtained by the capacitance sensors are supplied to the main control system 12, and the main control system 12 sets the moving speed, position, and rotation angle of the reticle XYθ stage 8 in an exposure sequence. Set accordingly.

【０００５】露光光ＩＬのもとで、レチクル７上のパタ
ーンの像が投影光学系１３を介してウエハ１４上に投影
露光される。この際、ウエハ１４上の１ショット分の領
域に対して、レチクル７上のスリット状の照明領域の共
役像、即ち投影光学系１３の露光フィールドが小さいの
で、レチクル７を例えば−Ｘ方向に走査するのに同期し
てウエハ１４をＸ方向に一定速度で走査することによ
り、ウエハ１４上の１ショット分の領域への露光が行わ
れる。そのため、ウエハ１４は、ウエハ１４にＸ方向及
びＹ方向への移動を行うウエハＸＹステージ１５上に保
持され、ウエハＸＹステージ１５はウエハ側ベース１６
上に摺動自在に支持されている。Under the exposure light IL, a pattern image on the reticle 7 is projected and exposed on a wafer 14 via a projection optical system 13. At this time, since the conjugate image of the slit-shaped illumination area on the reticle 7, that is, the exposure field of the projection optical system 13 is smaller than the one shot area on the wafer 14, the reticle 7 is scanned in the −X direction, for example. The wafer 14 is scanned at a constant speed in the X direction in synchronization with the exposure, thereby exposing an area for one shot on the wafer 14. Therefore, the wafer 14 is held on a wafer XY stage 15 that moves the wafer 14 in the X and Y directions, and the wafer XY stage 15 is
It is slidably supported above.

【０００６】また、ウエハＸＹステージ１５上のＸ方向
の端部に移動鏡１７が固定され、Ｘ軸用のレーザー干渉
計１８からのレーザービームが移動鏡１７により反射さ
れている。図示省略するも、ウエハＸＹステージ１５上
のＹ方向の端部に移動鏡が固定され、図示省略したＹ軸
用のレーザー干渉計からのレーザービームがその移動鏡
により反射されている。Ｘ軸用のレーザー干渉計１８及
びＹ軸用のレーザー干渉計は、それぞれウエハＸＹステ
ージ１５上の移動鏡からのレーザービームと参照鏡から
のレーザービームとの干渉光を光電変換して、ウエハＸ
Ｙステージ１５のＸ座標及びＹ座標を検出する。これら
Ｘ座標及びＹ座標も主制御系１２に供給され、主制御系
１２はウエハＸＹステージ１５の移動速度及び位置を露
光シーケンスに応じて設定する。A movable mirror 17 is fixed to an end of the wafer XY stage 15 in the X direction, and a laser beam from a laser interferometer 18 for the X axis is reflected by the movable mirror 17. Although not shown, a moving mirror is fixed to an end of the wafer XY stage 15 in the Y direction, and a laser beam from a Y-axis laser interferometer not shown is reflected by the moving mirror. The X-axis laser interferometer 18 and the Y-axis laser interferometer photoelectrically convert interference light between the laser beam from the moving mirror and the laser beam from the reference mirror on the wafer XY stage 15, respectively.
The X coordinate and the Y coordinate of the Y stage 15 are detected. The X coordinate and the Y coordinate are also supplied to the main control system 12, and the main control system 12 sets the moving speed and the position of the wafer XY stage 15 according to the exposure sequence.

【０００７】次に、従来のスリットスキャン露光方式で
露光を行う際の、ウエハ１４及びレチクル７の相対走査
方法について説明する。先ず、露光時にはウエハ１４
は、露光面の各点でそれぞれ露光量が一定になるように
等速度でＸ方向に走査する必要があるため、レーザー干
渉計１８の計測結果に基づいて速度制御が行われる。具
体的に、レーザー干渉計１８の計測結果であるＸ方向の
座標の微分値に適当なフィルタリングを施して、その値
が一定になるように制御される。Next, a description will be given of a relative scanning method of the wafer 14 and the reticle 7 when performing exposure by the conventional slit scan exposure method. First, at the time of exposure, the wafer 14
Since it is necessary to scan in the X direction at a constant speed so that the exposure amount becomes constant at each point on the exposure surface, speed control is performed based on the measurement result of the laser interferometer 18. Specifically, the differential value of the coordinate in the X direction, which is the measurement result of the laser interferometer 18, is appropriately filtered and controlled so that the value becomes constant.

【０００８】一方、投影光学系１３のレチクル７からウ
エハ１４への縮小倍率をβ（β＜１）とすると、その際
のレチクル７の−Ｘ方向への走査は、レーザー干渉計１
８による計測結果に対して縮小倍率の逆数である１／β
を乗じた値と、レーザー干渉計１１による計測結果との
差を算出し、この差が０になるように位置制御すること
によって行われていた。On the other hand, if the reduction magnification of the projection optical system 13 from the reticle 7 to the wafer 14 is β (β <1), the scanning of the reticle 7 in the −X direction is performed by the laser interferometer 1.
1 / β which is the reciprocal of the reduction ratio with respect to the measurement result by 8
Is calculated by calculating the difference between the value obtained by multiplying by the laser interferometer 11 and controlling the position so that the difference becomes zero.

【０００９】[0009]

【発明が解決しようとする課題】上記の如き従来の技術
においては、ウエハ１４及びレチクル７の相対走査時の
速度安定性が要求される。そのため、ウエハＸＹステー
ジ１５及びレチクルＸＹθステージ８として、それぞれ
比較的大きな重量を有し、慣性を利用した外乱の影響が
少ないステージを採用することによって、安定した等速
度運動でウエハ１４及びレチクル７を相対走査してい
た。In the prior art as described above, the speed stability of the wafer 14 and the reticle 7 during relative scanning is required. Therefore, the wafer XY stage 15 and the reticle XYθ stage 8 each have a relatively large weight and are less affected by disturbance using inertia, so that the wafer 14 and the reticle 7 can be stably moved at a constant speed. Relative scanning.

【００１０】それら比較的大きな重量を持つウエハＸＹ
ステージ１５及びレチクルＸＹθステージ８は等速運動
中は安定している。しかしながら、レチクル７とウエハ
１４との相対位置（レーザー干渉計の計測結果の差）が
ずれた場合には、その重量のために制御性が悪くなり、
ウエハ１４上に露光された像に歪が生ずる一因になると
いう不都合があった。[0010] These relatively large weight wafers XY
The stage 15 and the reticle XYθ stage 8 are stable during constant velocity movement. However, when the relative position between the reticle 7 and the wafer 14 (difference in the measurement result of the laser interferometer) is deviated, the controllability deteriorates due to the weight thereof,
There is an inconvenience that distortion of the image exposed on the wafer 14 is caused.

【００１１】更に、レチクル７及びウエハ１４は、相対
走査方向に垂直なＹ方向及び回転方向に対しては実質的
に静止させる必要があり、そのためには、レチクル７と
ウエハ１４との相対位置をＹ方向及び回転方向に調整す
る微小位置制御可能な機構が必要である。従来はウエハ
ＸＹステージ１５及びレチクルＸＹθステージ８がその
微小位置制御可能な機構を兼ねていた。しかしながら、
両ステージ共に比較的大きな重量を有するため、応答性
が悪いと共に制御が複雑であるという不都合があった。
即ち、従来のスリットスキャン露光方式の投影露光装置
では、相対走査方向の定速度駆動制御並びにＸ方向、Ｙ
方法及び回転方向の位置合わせを同時に精度よく制御す
ることが困難であるという不都合があった。Further, the reticle 7 and the wafer 14 need to be substantially stationary in the Y direction perpendicular to the relative scanning direction and in the rotation direction. For this purpose, the relative positions of the reticle 7 and the wafer 14 must be adjusted. A mechanism capable of minute position control for adjusting in the Y direction and the rotation direction is required. Conventionally, the wafer XY stage 15 and the reticle XYθ stage 8 also have a mechanism capable of controlling the minute position. However,
Since both stages have a relatively large weight, there are disadvantages that the response is poor and the control is complicated.
That is, in the projection exposure apparatus of the conventional slit scan exposure type, the constant speed drive control in the relative scanning direction and the X direction, Y direction
There has been an inconvenience that it is difficult to simultaneously control the method and the alignment in the rotation direction with high accuracy.

【００１２】本発明は斯かる点に鑑み、レチクル及びウ
エハの相対走査方向の定速度駆動並びにレチクルとウエ
ハとの位置合わせを同時に高精度に行うことができる、
スリットスキャン露光方式の走査露光方法を提供するこ
とを目的とする。更に本発明はその走査露光方法を実施
できる走査型露光装置、及びその走査露光方法を用いる
デバイス製造方法を提供することをも目的とする。 In view of the foregoing, the present invention can perform high-precision simultaneous driving of a reticle and a wafer at a constant speed in a relative scanning direction and alignment of a reticle and a wafer.
An object of the present invention is to provide a scanning exposure method of a slit scanning exposure system. Further, the present invention implements the scanning exposure method.
Scanning exposure apparatus capable of using the same and its scanning exposure method
Another object is to provide a device manufacturing method.

【００１３】本発明による第１の走査型露光装置は、例
えば図１に示すように、露光光で転写用のパターンが形
成されたマスク（７）を均一な照度で照明する照明光学
系（２２）と、マスク（７）上のその露光光による照明
領域を設定する視野絞りと、マスク（７）の転写用のパ
ターンの像を感光基板（１４）上に投影する投影光学系
（１３）とを有し、その露光光による照明領域の走査方
向にマスク（７）及び感光基板（１４）を同期して走査
することにより、マスク（７）上のその露光光による照
明領域よりも広い領域の転写用のパターンの像を感光基
板（１４）上に露光する走査型露光装置において、その
露光光による照明領域に対してマスク（７）をその走査
方向に等速度で走査する第１のマスク駆動手段（２０）
と、第１のマスク駆動手段（２０）とは独立に、マスク
（７）に平行な面内でマスク（７）に並進移動及び回転
を行わせる第２のマスク駆動手段（２１）とを有する。 The first scanning type exposure apparatus according to the present invention comprises, as shown in FIG. 1, for example, an illumination optical system (22) for illuminating a mask (7) on which a transfer pattern is formed with exposure light with uniform illuminance. ), A field stop for setting an illumination area on the mask (7) by the exposure light, and a projection optical system (13) for projecting an image of a transfer pattern of the mask (7) onto a photosensitive substrate (14). The mask (7) and the photosensitive substrate (14) are synchronously scanned in the scanning direction of the illumination area by the exposure light, so that a larger area of the mask (7) than the illumination area by the exposure light is obtained. In a scanning exposure apparatus for exposing an image of a pattern for transfer onto a photosensitive substrate (14), a first mask drive for scanning a mask (7) at a constant speed in a scanning direction with respect to an illumination area by the exposure light. Means (20)
And a second mask driving means (21) for causing the mask (7) to translate and rotate in a plane parallel to the mask (7), independently of the first mask driving means (20). .

【００１４】更に、本発明は、マスク（７）のこのマス
ク（７）に平行な面内での位置及び回転角を検出するマ
スク位置検出手段（３５）と、マスク（７）の転写用の
パターン像を投影したときの共役像に対して感光基板
（１４）をその走査方向に共役な方向に相対的に等速度
で走査する基板駆動手段（２７）と、感光基板（１４）
のこの感光基板（１４）に平行な面内での位置及び回転
角を検出する基板位置検出手段（４７Ｂ）と、基板位置
検出手段（４７Ｂ）により検出された感光基板（１４）
の位置及び回転角に応じて、第２のマスク駆動手段（２
１）を介してマスク（７）の位置及び回転角を制御する
制御手段（２３）とを有するものである。次に、本発明
による第２の走査型露光装置は、走査露光のために、第
１物体と第２物体とを同期移動する走査型露光装置にお
いて、その第１物体とその第２物体とのうちの一方の物
体を移動する第１駆動手段と、その一方の物体が露光ビ
ームで走査されるようにその第１駆動手段がその一方の
物体を移動しているときに、その第１駆動手段とは独立
して、その一方の物体を移動する第２駆動手段と、その
第１物体とその第２物体とのうちの他方の物体がその露
光ビームで走査されるよう、その第１の駆動手段及びそ
の第２駆動手段とは独立して、その他方の物体を移動す
る第３駆動手段と、を備えたものである。また、本発明
による第３の走査型露光装置は、露光光で転写用のパタ
ーンが形成されたマスクを照明する照明光学系と、その
マスク上のその露光光による照射領域を設定する視野絞
りと、そのマスクの転写用パターンの像を基板上に縮小
投影する投影系と、その露光光による照射領域に対して
その基板を等速度で走査する基板駆動手段と、その基板
の走査と同期してその投影系の縮小率に応じたその基板
と異なる速度でその露光光による照射領域に対してその
マスクを走査するマスク駆動手段と、を備えた走査型露
光装置において、そのマスク駆動手段は、そのマスクを
等速度で走査するための第１駆動手段と、そのマスクを
保持する保持部材と、その第１の駆動手段に固定された
駆動機構によりその第１の駆動手段に対してその保持部
材を動かすことによりそのマスクを所定面内で２次元方
向及び回転方向に移動する第２駆動手段と、を有するも
のである。また、本発明による第４の走査型露光装置
は、露光光で転写用のパターンが形成されたマスクを照
明する照明光学系と、そのマスク上のその露光光による
照射領域を設定する視野絞りと、そのマスクの転写用の
パターンの像を基板上に縮小投影する投影系と、その基
板を保持する基板保持部材を有しその露光光による照射
領域に対してその基板を走査する基板駆動手段と、その
基板の走査と同期してその投影系の縮小率に応じたその
基板と異なる速度でその露光光による照射領域に対して
そのマスクを走査するマスク駆動手段と、を備えた走査
型露光装置において、そのマスクの位置情報を検出する
マスク位置検出手段と、その基板の位置情報を検出する
基板位置検出手段とをさらに備え、そのマスク駆動手段
は、そのマスクを所定速度で走査するための第１駆動手
段と、そのマスクを保持するマスク保持部材と、その第
１駆動手段に固定された駆動機構によりその第１駆動手
段に対しそのマスク保持部材を動かすことによりそのマ
スクを所定面内で移動する第２駆動手段とを有し、その
第１駆動手段はそのマスクの移動速度が所定速度となる
ように速度制御され、その第２駆動手段はそのマスク位
置検出手段とその基板位置検出手段とに基づいてそのマ
スクとその基板とが所定の位置関係となるように位置制
御されるものである。また、本発明の第１のデバイス製
造方法は、本発明の走査型露光装置を用いて露光を行う
工程を含むものである。次に、本発明による走査露光方
法は、第１物体と第２物体とを同期移動する走査露光方
法において、その第１物体とその第２物体とのうちの一
方の物体が露光ビームで走査されるように該一方の物体
を第１駆動手段を用いて移動し、その第１の駆動手段が
その一方の物体を移動しているときに、その第１駆動手
段とは独立に第２の駆動手段を用いてその一方の物体を
動かし、その第１物体とその第２物体とのうちの他方の
物体が露光ビームで走査されるように、その第１の駆動
手段及びその第２駆動手段とは独立して、その他方の物
体を第３の駆動手段を用いて移動するものである。ま
た、本発明による第２のデバイス製造方法は、本発明の
走査露光方法を用いるものである。 Further, the present invention provides a mask position detecting means (35) for detecting a position and a rotation angle of a mask (7) in a plane parallel to the mask (7), and a transfer means for transferring the mask (7). Substrate driving means (27) for scanning the photosensitive substrate (14) relative to the conjugate image obtained by projecting the pattern image at a constant speed in a direction conjugate with the scanning direction; and a photosensitive substrate (14).
Substrate position detecting means (47B) for detecting a position and a rotation angle in a plane parallel to the photosensitive substrate (14), and a photosensitive substrate (14) detected by the substrate position detecting means (47B).
The second mask driving means (2
And control means (23) for controlling the position and rotation angle of the mask (7) via 1). Next, the present invention
The second scanning type exposure apparatus according to
A scanning exposure apparatus that synchronously moves one object and a second object
And one of the first object and the second object
The first driving means for moving the body, and one of the objects is an exposure camera.
The first driving means is used for scanning with one of the
Independent of the first driving means when moving an object
And second driving means for moving one of the objects,
The other of the first object and the second object is exposed.
The first driving means and the first driving means so as to be scanned by the light beam.
Independent of the second driving means for moving the other object
And third driving means. In addition, the present invention
The third scanning type exposure apparatus according to
Optical system that illuminates the mask with the
Field stop to set the irradiation area on the mask by the exposure light
Image of the transfer pattern of the mask on the substrate
For the projection system to project and the area irradiated by the exposure light
Substrate driving means for scanning the substrate at a constant speed, and the substrate
The substrate according to the reduction ratio of the projection system in synchronization with the scanning of
At a different speed from the exposure area by the exposure light
A mask driving means for scanning the mask.
In the optical device, the mask driving means controls the mask.
The first driving means for scanning at a constant speed and the mask
Holding member for holding, fixed to the first driving means
A holding mechanism for the first driving means by a driving mechanism;
By moving the material, the mask can be moved two-dimensionally within a predetermined plane.
And second driving means that moves in the rotation direction and the rotation direction.
It is. A fourth scanning exposure apparatus according to the present invention
Is irradiation a mask pattern to be transferred is made form with exposure light
Illumination optics and its exposure light on the mask
A field stop for setting the irradiation area and a mask for transferring the mask
A projection system that reduces and projects a pattern image onto a substrate
Irradiation with exposure light having a substrate holding member for holding a plate
Substrate driving means for scanning the substrate with respect to the area,
Synchronizing with the scanning of the substrate, the
At the speed different from the substrate to the area irradiated by the exposure light
Mask driving means for scanning the mask.
In the pattern exposure apparatus, the position information of the mask is detected
Mask position detecting means for detecting position information of the substrate
A substrate position detecting unit, and the mask driving unit
Is a first driving mechanism for scanning the mask at a predetermined speed.
A step, a mask holding member for holding the mask, and a
The first driving means is driven by a driving mechanism fixed to the first driving means.
The mask is moved by moving the mask holding member against the step.
Second driving means for moving the disc in a predetermined plane,
The first drive means moves the mask at a predetermined speed.
Speed is controlled as described above, and the second driving means
Based on the position detection means and the substrate position detection means.
Position so that the disk and its substrate have a predetermined positional relationship.
Is controlled. Also, the first device of the present invention
The manufacturing method performs exposure using the scanning exposure apparatus of the present invention.
It includes steps. Next, the scanning exposure method according to the present invention
The method is a scanning exposure method that synchronously moves a first object and a second object.
In the method, one of the first object and the second object
One object so that the other object is scanned by the exposure beam
Is moved using the first drive means, and the first drive means
While moving one of the objects, the first driver
Independently of the step, one of the objects is
Move the other of the first object and the second object
Its first drive so that the object is scanned with the exposure beam
Means independent of the means and its second drive means
The body is moved using the third driving means. Ma
Further, the second device manufacturing method according to the present invention
A scanning exposure method is used.

【００１５】[0015]

【作用】斯かる本発明によれば、例えば第１物体として
のマスク（７）の駆動部が、相対走査駆動部及びガイド
部を有する第１のマスク駆動手段（２０）と、マスク
（７）に並進移動及び回転を行わせる第２のマスク駆動
手段（２１）とに分離され、これら２個の駆動手段がそ
れぞれ独立に制御される。従って、第１のマスク駆動手
段（２０）としては、例えば相対走査時に安定した等速
度運動が行えるような重量のあるステージ及び１軸方向
のみに高精度で長距離の駆動が可能なガイドを使用し、
第２のマスク駆動手段（２１）としては、例えば並進方
向及び回転方向に微小量の動作が可能で軽量な制御性の
良好なステージ及びガイドを使用することにより、等速
性及び位置制御性の良好なスリットスキャン露光が行わ
れる。According to the present invention, for example, as the first object
The driving unit of the mask (7) includes a first mask driving unit (20) having a relative scanning driving unit and a guide unit, and a second mask driving unit (21) for causing the mask (7) to translate and rotate. ), And these two driving means are independently controlled. Therefore, as the first mask driving means (20), for example, a heavy stage capable of performing a stable constant-velocity movement during relative scanning and a guide capable of driving a long distance with high accuracy only in one axial direction are used. And
As the second mask driving means (21), for example, by using a lightweight stage and guide which can move in a small amount in the translation direction and the rotation direction and has good controllability, uniform speed and position controllability can be obtained. Good slit scan exposure is performed.

【００１６】[0016]

【実施例】以下、本発明による投影露光装置の一実施例
につき図１〜図５を参照して説明する。図１は、本例の
スリットスキャン露光方式の投影露光装置を示し、この
図１において、レチクル７に平行な面内で図１の紙面に
垂直な方向にＸ軸、図１の紙面に平行な方向にＹ軸をと
り、ＸＹ平面に垂直にＺ軸をとる。また、スリットスキ
ャン露光の際の相対走査方向をＸ方向とする。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a projection exposure apparatus according to the present invention will be described below with reference to FIGS. FIG. 1 shows a projection exposure apparatus of a slit scan exposure type of this embodiment. In FIG. 1, an X axis is a direction perpendicular to the plane of FIG. 1 in a plane parallel to the reticle 7, and is parallel to the plane of FIG. Direction, and the Z axis perpendicular to the XY plane. Further, the relative scanning direction at the time of slit scan exposure is defined as an X direction.

【００１７】先ず、レチクル７用のステージ系におい
て、レチクル側ベース１９にはＸ方向に長いエアガイド
を形成し、レチクル側ベース１９上にＸＹ平面内でＸ方
向に摺動自在にレチクル側走査ステージ２０を載置す
る。そして、レチクル側走査ステージ２０上にＸＹ平面
内での並進及び回転ができる状態でレチクル側微動ステ
ージ２１を載置し、レチクル側微動ステージ２１上にレ
チクル７を保持する。露光時には、レチクル７のパター
ン領域を、照明光学系２２からの露光光ＩＬによるスリ
ット状の照明領域で照明し、そのスリット状の照明領域
に対してレチクル７をＸ方向に走査する。照明光学系２
２は、光源、シャッター、オプティカルインテグレー
タ、スリット状の照明領域を設定するための視野絞り及
びコンデンサーレンズ等より構成されている。First, in the stage system for the reticle 7, an air guide long in the X direction is formed on the reticle side base 19, and the reticle side scanning stage is slidable on the reticle side base 19 in the XY plane in the X direction. 20 is placed. Then, the reticle-side fine movement stage 21 is placed on the reticle-side scanning stage 20 in a state where translation and rotation in the XY plane can be performed, and the reticle 7 is held on the reticle-side fine movement stage 21. At the time of exposure, the pattern area of the reticle 7 is illuminated with a slit-shaped illumination area by exposure light IL from the illumination optical system 22, and the reticle 7 is scanned in the X direction with respect to the slit-shaped illumination area. Illumination optical system 2
Reference numeral 2 includes a light source, a shutter, an optical integrator, a field stop for setting a slit-shaped illumination area, a condenser lens, and the like.

【００１８】レチクル側微動ステージ２１上には、３個
の移動鏡（図１では移動鏡３３のみを表示）を固定し、
これら３個の移動鏡から反射されるレーザービームを用
いて、３個のレーザー干渉計（図１ではレーザー干渉計
３５のみを表示）によりそれぞれレチクル側微動ステー
ジ２１の位置検出を行う。これらレーザー干渉計による
計測結果を主制御系２３に供給する。３個の位置計測結
果より、レチクル側微動ステージ２１のＸＹ平面内での
位置及び回転角が求められる。主制御系２３は、相対走
査用の駆動装置２４を介してレチクル側走査ステージ２
０の動作を制御し、微動制御用の駆動装置２５を介して
レチクル側微動ステージ２１の動作を制御することによ
り、レチクル７の相対走査速度及び位置の制御を行う。On the reticle-side fine movement stage 21, three movable mirrors (only the movable mirror 33 is shown in FIG. 1) are fixed.
Using the laser beams reflected from these three movable mirrors, the position of the reticle-side fine movement stage 21 is detected by three laser interferometers (only the laser interferometer 35 is shown in FIG. 1). The measurement results from these laser interferometers are supplied to the main control system 23. From the three position measurement results, the position and rotation angle of the reticle-side fine movement stage 21 in the XY plane are obtained. The main control system 23 is connected to the reticle-side scanning stage 2 via a relative scanning driving device 24.
By controlling the operation of the reticle 7, the relative scanning speed and the position of the reticle 7 are controlled by controlling the operation of the reticle-side fine movement stage 21 via the fine movement control drive device 25.

【００１９】露光時には、レチクル７のパターン領域内
のスリット状の照明領域のパターン像が投影光学系１３
を介してウエハ１４上に投影露光される。ウエハ１４用
のステージ系において、ウエハ側ベース２６にはＸ方向
に長いエアガイドを形成し、ウエハ側ベース２６上にＸ
Ｙ平面内でＸ方向に摺動自在にウエハ側Ｘステージ２７
を載置する。そして、ウエハ側Ｘステージ２７上にＸＹ
平面内でＹ方向への移動ができる状態でウエハ側Ｙステ
ージ２８を載置し、ウエハ側Ｙステージ２８上にウエハ
１４を保持する。なお、図示省略するも、ウエハ側Ｙス
テージ２８とウエハ１４との間には、Ｚステージ及びレ
ベリング用のステージ等が設けられている。ウエハ側Ｘ
ステージ２７上の一端にはステッピングモーター２９を
固定し、ステッピングモーター２９によりボールねじ３
０を介してウエハ側Ｙステージ２８をＹ方向に駆動す
る。At the time of exposure, a pattern image of a slit-shaped illumination area in the pattern area of the reticle 7 is projected.
Is projected and exposed on the wafer 14 via the. In the stage system for the wafer 14, an air guide long in the X direction is formed on the wafer side base 26, and the X
The wafer-side X stage 27 is slidable in the X direction within the Y plane.
Is placed. Then, XY is placed on the wafer-side X stage 27.
The wafer-side Y stage 28 is placed so as to be movable in the Y direction within the plane, and the wafer 14 is held on the wafer-side Y stage 28. Although not shown, a Z stage, a leveling stage, and the like are provided between the wafer side Y stage 28 and the wafer 14. Wafer side X
A stepping motor 29 is fixed to one end on the stage 27, and the ball screw 3 is
Then, the wafer-side Y stage 28 is driven in the Y direction via 0.

【００２０】ウエハ側Ｙステージ２８上には、３個の移
動鏡（図１では移動鏡４５のみを表示）を固定し、これ
ら３個の移動鏡から反射されるレーザービームを用い
て、３個のレーザー干渉計（図１ではレーザー干渉計４
７Ｂのみを表示）によりそれぞれウエハ側Ｙステージ２
８の位置検出を行う。これらレーザー干渉計による計測
結果も主制御系２３に供給する。３個の位置計測結果よ
り、ウエハ側Ｙステージ２８のＸＹ平面内での位置及び
回転角が求められる。主制御系２３は、駆動装置３１を
介してウエハ側Ｘステージ２７及びウエハ側Ｙステージ
２８の動作を制御することにより、ウエハ１４の相対走
査速度及び位置の制御を行う。On the wafer-side Y stage 28, three movable mirrors (only the movable mirror 45 is shown in FIG. 1) are fixed, and three movable mirrors are used by using the laser beams reflected from the three movable mirrors. Laser interferometer (laser interferometer 4 in FIG. 1)
7B only), the wafer side Y stage 2
8 is detected. The measurement results of these laser interferometers are also supplied to the main control system 23. From the three position measurement results, the position and rotation angle of the wafer-side Y stage 28 in the XY plane are obtained. The main control system 23 controls the relative scanning speed and position of the wafer 14 by controlling the operations of the wafer-side X stage 27 and the wafer-side Y stage 28 via the driving device 31.

【００２１】図２は図１のレチクルステージ系の平面図
であり、この図２において、レチクル側ベース１９上に
Ｘ方向に２列のエアーガイド１９ａ及び１９ｂを形成
し、エアーガイド１９ａ及び１９ｂの両側にそれぞれＸ
方向に一列に電磁石３２Ａ及び３２Ｂを埋め込む。ま
た、エアーガイド１９ａ及び１９ｂの上にレチクル側走
査ステージ２０を載置し、レチクル側走査ステージ２０
上にレチクル側微動ステージ２１を載置する。レチクル
側走査ステージ２０の裏面には永久磁石が埋め込まれ、
レチクル側走査ステージ２０はＸ方向にリニアモーター
方式で駆動される。また、リニアモーターの熱がレチク
ル側微動ステージ２１側に伝導しないように、レチクル
側走査ステージ２０には冷却機能（例えば、温度制御さ
れた気体または流体を循環する方式）がついている。レ
チクル側微動ステージ２１のＹ方向の端部には、Ｙ軸に
垂直でＸ方向に長い反射面を有する移動鏡３３を取り付
け、レチクル側微動ステージ２１のＸ方向の端部の２箇
所に、Ｘ軸に垂直な反射面を有する移動鏡３４Ａ及び３
４Ｂを取り付ける。FIG. 2 is a plan view of the reticle stage system shown in FIG. 1. In FIG. 2, two rows of air guides 19a and 19b are formed on the reticle side base 19 in the X direction. X on each side
The electromagnets 32A and 32B are embedded in a line in the direction. The reticle-side scanning stage 20 is mounted on the air guides 19a and 19b.
The reticle-side fine movement stage 21 is mounted thereon. A permanent magnet is embedded in the back surface of the reticle-side scanning stage 20,
The reticle-side scanning stage 20 is driven by a linear motor in the X direction. The reticle-side scanning stage 20 has a cooling function (for example, a method of circulating a temperature-controlled gas or fluid) so that the heat of the linear motor is not transmitted to the reticle-side fine movement stage 21 side. A movable mirror 33 having a reflecting surface perpendicular to the Y axis and having a long surface in the X direction is attached to an end of the reticle-side fine movement stage 21 in the Y direction. Moving mirrors 34A and 34 having reflecting surfaces perpendicular to the axis
Attach 4B.

【００２２】そして、移動鏡３３に対向するようにＹ軸
用のレーザー干渉計３５をレチクル側ベース１９に対し
て固定するように配置し、移動鏡３４Ａに対向するよう
にＸ軸用のレーザー干渉計３６Ａをレチクル側ベース１
９に対して固定するように配置し、移動鏡３４Ｂに対向
するように回転計測用のレーザー干渉計３６Ｂをレチク
ル側ベース１９に対して固定するように配置する。Ｙ軸
用のレーザー干渉計３５により計測されたレチクル側微
動ステージ２１のＹ座標データＲＳｙ、Ｘ軸用のレーザ
ー干渉計３６Ａにより計測されたレチクル側微動ステー
ジ２１のＸ座標データＲＳｘ、及び回転計測用のレーザ
ー干渉計３６Ｂにより計測されたレチクル側微動ステー
ジ２１の回転角データＲＳθを図１の主制御系２３に供
給する。尚、Ｘ軸用のレーザー干渉計３６Ａのビーム
は、光路が長い為に独立した空調機構（図示省略）が搭
載されている。具体的には、ビーム光路を覆う固定カバ
ー（筒）を、移動鏡３４Ａと固定鏡（例えば投影光学系
１３の鏡筒部に固定）との各々に向かうビームを射出す
るビームスプリッターと移動鏡との間の光路、及び／又
はそのビームスプリッターと固定鏡との間の光路のほぼ
全域又は一部を覆うように設ける。その固定カバーの内
部に温度制御された気体を流しても良い。A Y-axis laser interferometer 35 is fixed to the reticle-side base 19 so as to face the movable mirror 33, and the X-axis laser interferometer 35 is opposed to the movable mirror 34A. 36A in total on reticle side base 1
9, and a laser interferometer 36B for rotation measurement is arranged to be fixed to the reticle-side base 19 so as to face the movable mirror 34B. Y coordinate data RSy of reticle side fine movement stage 21 measured by Y axis laser interferometer 35, X coordinate data RSx of reticle side fine movement stage 21 measured by X axis laser interferometer 36A, and rotation measurement The rotation angle data RSθ of the reticle-side fine movement stage 21 measured by the laser interferometer 36B is supplied to the main control system 23 in FIG. Since the beam of the laser interferometer 36A for the X axis has a long optical path, an independent air conditioning mechanism (not shown) is mounted. Specifically, a fixed cover (cylinder) covering the beam optical path is provided with a beam splitter and a movable mirror for emitting a beam directed to each of the movable mirror 34A and the fixed mirror (for example, fixed to the barrel of the projection optical system 13). And / or substantially the whole or a part of the optical path between the beam splitter and the fixed mirror. A gas whose temperature is controlled may flow into the inside of the fixed cover.

【００２３】また、図２のレチクル側走査ステージ２０
上には、レチクル側微動ステージ２１をそれぞれＸ方向
に微動するアクチュエータ３８，４０及びレチクル側微
動ステージ２１をＹ方向に微動するアクチュエータ４２
を固定する。アクチュエータ３８及び４０とレチクル側
微動ステージ２１との接触位置はほぼ移動鏡３４Ａ及び
３４Ｂと対称な位置である。そして、レチクル側微動ス
テージ２１は３対のばね３７Ａ，３７Ｂ、３９Ａ，３９
Ｂ及び４１Ａ，４１Ｂを介してそれぞれアクチュエータ
３８、４０及び４２の方向に付勢されている。３個のア
クチュエータ３８，４０及び４２の変位量を調整するこ
とにより、レチクル側微動ステージ２１及びレチクル７
にＸＹ平面内での移動及び回転を行わせることができ
る。The reticle-side scanning stage 20 shown in FIG.
Actuators 38 and 40 for finely moving the reticle-side fine movement stage 21 in the X direction and actuators 42 for finely moving the reticle-side fine movement stage 21 in the Y direction are provided above.
Is fixed. The contact positions between the actuators 38 and 40 and the reticle-side fine movement stage 21 are substantially symmetrical to the movable mirrors 34A and 34B. The reticle-side fine movement stage 21 has three pairs of springs 37A, 37B, 39A, 39.
B and are urged in the direction of actuators 38, 40 and 42 via 41A and 41B, respectively. By adjusting the displacement amounts of the three actuators 38, 40 and 42, the reticle-side fine movement stage 21 and the reticle 7
Can be moved and rotated in the XY plane.

【００２４】また、レチクル７上には露光光ＩＬにより
Ｙ方向に長いスリット状の照明領域４３が形成される
が、この照明領域４３の中心４３ａを通りＹ軸に平行な
直線上に、Ｙ軸用のレーザー干渉計３５の光軸が設定さ
れている。レチクル７を回転させる際には、その照明領
域４３の中心４３ａを軸として回転させる必要がある
が、レチクル７をＸ方向に走査するとその中心４３ａも
レチクル７上の位置が変化する。そこで、３個のアクチ
ュエータ３８，４０及び４２の変位量を調整することに
より、その中心４３ａの位置に追従してレチクル７の回
転中心をずらすようにする。On the reticle 7, an exposure light IL forms a slit-shaped illumination area 43 which is long in the Y direction. The illumination area 43 is formed on a straight line passing through the center 43a of the illumination area 43 and parallel to the Y axis. The optical axis of the laser interferometer 35 is set. When rotating the reticle 7, it is necessary to rotate the reticle 7 about the center 43 a of the illumination area 43. However, when the reticle 7 is scanned in the X direction, the position of the center 43 a on the reticle 7 also changes. Therefore, by adjusting the displacement amounts of the three actuators 38, 40 and 42, the rotation center of the reticle 7 is shifted to follow the position of the center 43a.

【００２５】図３はウエハステージ系を示す平面図であ
り、この図３において、ウエハ側ベース２６上にＸ方向
に２列のエアーガイド２６ａ及び２６ｂを形成し、エア
ーガイド２６ａ及び２６ｂの両側にそれぞれＸ方向に一
列に電磁石４４Ａ及び４４Ｂを埋め込む。また、エアー
ガイド２６ａ及び２６ｂの上にウエハ側Ｘステージ２７
を載置し、ウエハ側Ｘステージ２７上にウエハ側Ｙステ
ージ２８を載置する。ウエハ側Ｘステージ２７の裏面に
は永久磁石が埋め込まれ、ウエハ側Ｘステージ２７はＸ
方向にリニアモーター方式で高精度に駆動される。リニ
アモーターの熱がウエハ側Ｙステージ２８側に伝導しな
いように、ウエハ側Ｘステージ２７には冷却機能がつい
ている。また、ウエハ側Ｘステージ２７上にＹ方向に２
列のエアーガイド２７ａ及び２７ｂを形成し、これらエ
アーガイド２７ａ及び２７ｂに沿ってステッピングモー
ター２９によりウエハ側Ｙステージ２８をＹ方向に駆動
する。FIG. 3 is a plan view showing a wafer stage system. In FIG. 3, two rows of air guides 26a and 26b are formed on the wafer-side base 26 in the X direction, and are provided on both sides of the air guides 26a and 26b. Electromagnets 44A and 44B are embedded in a line in the X direction. Further, the wafer-side X stage 27 is placed on the air guides 26a and 26b.
And the wafer-side Y stage 28 is placed on the wafer-side X stage 27. A permanent magnet is embedded in the back surface of the wafer-side X stage 27,
Directly driven by a linear motor system in the direction. The wafer-side X stage 27 has a cooling function so that the heat of the linear motor is not conducted to the wafer-side Y stage 28 side. In addition, the wafer side X stage 27
A row of air guides 27a and 27b are formed, and a wafer side Y stage 28 is driven in the Y direction by a stepping motor 29 along these air guides 27a and 27b.

【００２６】このウエハ側Ｙステージ２８のＹ方向の端
部には、Ｙ軸に垂直でＸ方向に長い反射面を有する移動
鏡４５を取り付け、Ｘ方向の端部には、Ｘ軸に垂直でＹ
方向に長い反射面を有する移動鏡４６を取り付ける。そ
して、移動鏡４５に対向するようにＸ方向に所定間隔を
開けて、Ｙ軸用のレーザー干渉計４７Ａ及び回転計測用
のレーザー干渉計４７Ｂをウエハ側ベース２６に対して
固定するように配置し、移動鏡４６に対向するようにＸ
軸用のレーザー干渉計４８をウエハ側ベース２６に対し
て固定するように配置する。Ｙ軸用のレーザー干渉計４
７Ａにより計測されたウエハ側Ｙステージ２８のＹ座標
データＷＳｙ、Ｘ軸用のレーザー干渉計４８により計測
されたウエハ側Ｙステージ２８のＸ座標データＷＳｘ、
及び回転計測用のレーザー干渉計４７Ｂにより計測され
たウエハ側Ｙステージ２８の回転角データＷＳθが図１
の主制御系２３に供給されている。A movable mirror 45 having a reflecting surface perpendicular to the Y axis and long in the X direction is attached to an end of the wafer side Y stage 28 in the Y direction. Y
A movable mirror 46 having a reflective surface that is long in the direction is attached. A laser interferometer 47A for Y-axis and a laser interferometer 47B for rotation measurement are arranged so as to be fixed to the wafer-side base 26 at a predetermined interval in the X direction so as to face the movable mirror 45. , X to face the moving mirror 46
The axis laser interferometer 48 is arranged to be fixed to the wafer side base 26. Laser interferometer for Y axis 4
7A, the Y coordinate data WSy of the wafer side Y stage 28 measured by 7A, the X coordinate data WSx of the wafer side Y stage 28 measured by the X axis laser interferometer 48,
FIG. 1 shows rotation angle data WSθ of wafer-side Y stage 28 measured by laser interferometer 47B for rotation measurement.
Of the main control system 23.

【００２７】この場合、レーザー干渉計４７Ａの光軸と
レーザー干渉計４８の光軸との交点に投影光学系１３の
光軸が位置する。また、投影光学系１３のＹ方向の側方
にオフ・アクシス方式のアライメント系４９が配置され
ているが、レーザー干渉計４７Ｂの光軸上にそのアライ
メント系４９の検出中心が位置し、且つアライメント系
４９の検出中心を通りＸ軸に平行な直線上にレーザー干
渉計４８の光軸がある。また、図２のスリット状の照明
領域４３の投影光学系１３によるウエハ１４上の共役像
の領域が、Ｙ方向に長いスリット状の露光領域４３Ｐで
ある。但し、図２の照明領域４３のＹ方向の端部はレチ
クル７の遮光部で多少けられるため、露光領域４３Ｐの
Ｙ方向の長さは、照明領域４３そのものの共役像の長さ
よりも短くなっている。In this case, the optical axis of the projection optical system 13 is located at the intersection of the optical axis of the laser interferometer 47A and the optical axis of the laser interferometer 48. Further, an off-axis type alignment system 49 is arranged on the side of the projection optical system 13 in the Y direction, but the detection center of the alignment system 49 is located on the optical axis of the laser interferometer 47B, and the alignment is performed. The optical axis of the laser interferometer 48 is on a straight line passing through the detection center of the system 49 and parallel to the X axis. The area of the conjugate image on the wafer 14 by the projection optical system 13 in the slit-shaped illumination area 43 in FIG. 2 is a slit-shaped exposure area 43P that is long in the Y direction. However, since the end in the Y direction of the illumination area 43 in FIG. 2 is slightly cut off by the light shielding portion of the reticle 7, the length of the exposure area 43P in the Y direction is shorter than the length of the conjugate image of the illumination area 43 itself. ing.

【００２８】次に、図１の実施例のスリットスキャン露
光時の制御方法につき説明する。一般にレチクル７のパ
ターンはウエハ１４上に縮小投影される。その理由は、
縮小投影する方がレチクル７のパターンの寸法やゴミ管
理等の点で有利となるからである。ところが、レチクル
７からウエハ１４への投影倍率をβとすると、スリット
スキャン露光時は、その投影倍率βの逆数を乗じた分だ
けレチクル側のステージをウエハ側のステージに対して
高速で駆動する必要がある。従って、露光時の相対走査
及びステージ制御に対する処理能力は、レチクル側のス
テージの駆動能力に依存する場合が多い。Next, a control method at the time of slit scan exposure in the embodiment of FIG. 1 will be described. Generally, the pattern of the reticle 7 is reduced and projected on the wafer 14. The reason is,
This is because reduction projection is advantageous in terms of the pattern size of the reticle 7 and dust management. However, assuming that the projection magnification from the reticle 7 to the wafer 14 is β, at the time of slit scan exposure, the stage on the reticle side needs to be driven at a high speed with respect to the stage on the wafer side by the inverse of the projection magnification β. There is. Therefore, the processing capability for relative scanning and stage control during exposure often depends on the driving capability of the stage on the reticle side.

【００２９】また、図１の主制御系２３は、ウエハ１４
をＸ方向及びＹ方向へ移動する際に駆動装置３１にウエ
ハ用のＸ方向駆動指令ＯＤＷｘ及びＹ方向駆動指令ＯＤ
Ｗｙを発する。Ｘ方向駆動指令ＯＤＷｘ及びＹ方向駆動
指令ＯＤＷｙは、それぞれウエハ側Ｘステージ２７のリ
ニアモーター及びウエハ側Ｙステージ２８用のステッピ
ングモーター２９の動きを制御するものである。更に、
主制御系２３は、レチクル７を相対走査方向であるＸ方
向へ移動する際に、走査用の駆動装置２４にレチクル用
の第１の駆動指令ＯＤＲ１を発し、レチクル７にＸＹ平
面内での移動及び回転を行わせる際に、微動用の駆動装
置２５にレチクル用の第２の駆動指令ＯＤＲ２を発す
る。第１の駆動指令ＯＤＲ１はレチクル側走査ステージ
２０のリニアモーターの動作を制御し、第２の駆動指令
ＯＤＲ２はレチクル側微動ステージ２１の３個のアクチ
ュエータ３８，４０，４２（図２参照）の動作を制御す
る。The main control system 23 shown in FIG.
When the wafer is moved in the X direction and the Y direction, the drive device 31 is provided with an X direction drive command ODWx and a Y direction drive command OD for the wafer.
Emits Wy. The X-direction drive command ODWx and the Y-direction drive command ODWy control the movements of the linear motor of the wafer-side X stage 27 and the stepping motor 29 for the wafer-side Y stage 28, respectively. Furthermore,
When moving the reticle 7 in the X direction, which is a relative scanning direction, the main control system 23 issues a first driving command ODR1 for the reticle to the scanning driving device 24, and moves the reticle 7 in the XY plane. When the rotation is performed, the second drive command ODR2 for the reticle is issued to the fine movement drive device 25. The first drive command ODR1 controls the operation of the linear motor of the reticle-side scanning stage 20, and the second drive command ODR2 operates the three actuators 38, 40, 42 (see FIG. 2) of the reticle-side fine movement stage 21. Control.

【００３０】ここで図４のフローチャート及び図５を参
照して制御方法の一例を説明する。図５（ａ）はレチク
ル７とスリット状の照明領域４３との相対的な位置関係
を示し、図５（ｂ）はウエハ１４とスリット状の露光領
域４３Ｐとの相対的な位置関係を示す。そして、本例で
はレチクル７のパターンの縮小像を、それぞれウエハ１
４上の隣り合う２個のショット領域５０Ａ及び５０Ｂに
順次露光するものとする。説明の便宜上、初期状態で
は、図５（ａ）の照明領域４３の中心がレチクル１７の
中心の位置Ａに在り、図５（ｂ）の露光領域４３Ｐの中
心がウエハ１４の第１のショット領域５０Ａの中心の位
置ＡＰに在るとする。更に、初期状態では、レチクル７
はＸ方向に速度Ｖ／βで走査され、ウエハ１４は−Ｘ方
向に速度Ｖで走査されており、レチクル７とウエハ１４
との相対的な位置及び回転角の誤差は０であるものとす
る。この初期状態から図４のステップ１０１に移行す
る。Here, an example of the control method will be described with reference to the flowchart of FIG. 4 and FIG. FIG. 5A shows a relative positional relationship between the reticle 7 and the slit-shaped illumination region 43, and FIG. 5B shows a relative positional relationship between the wafer 14 and the slit-shaped exposure region 43P. In this example, the reduced images of the pattern of the reticle 7 are
It is assumed that two adjacent shot areas 50A and 50B on 4 are sequentially exposed. For convenience of explanation, in the initial state, the center of the illumination area 43 in FIG. 5A is located at the position A of the center of the reticle 17, and the center of the exposure area 43P in FIG. It is assumed that it is located at the center position AP of 50A. Furthermore, in the initial state, the reticle 7
Is scanned at a speed V / β in the X direction, and the wafer 14 is scanned at a speed V in the −X direction.
It is assumed that the error of the relative position and the rotation angle with respect to is zero. The process shifts from this initial state to step 101 in FIG.

【００３１】図４のステップ１０１において、図１の主
制御系２３は、ウエハ側Ｘステージ２７を速度Ｖで−Ｘ
方向に等速で駆動し、レチクル側走査ステージ２０を速
度Ｖ／βでＸ方向に等速で駆動する。ウエハ側Ｘステー
ジ２７を等速で駆動するには、主制御系２３はレーザー
干渉計４８から供給されるＸ座標データＷＳｘの微分値
をサンプリングして、この微分値が速度Ｖに対応する一
定値になるようにＸ方向駆動指令ＯＤＷｘを発令する。
同様に、レチクル側走査ステージ２０を等速で駆動する
には、主制御系２３はレーザー干渉計３６Ａから供給さ
れるＸ座標データＲＳｘの微分値をサンプリングして、
この微分値が速度Ｖ／βに対応する一定値になるように
第１の駆動指令ＯＤＲ１を発する。In step 101 of FIG. 4, the main control system 23 of FIG.
The reticle-side scanning stage 20 is driven at a constant speed in the X direction at a speed V / β. In order to drive the wafer-side X stage 27 at a constant speed, the main control system 23 samples a differential value of the X coordinate data WSx supplied from the laser interferometer 48, and the differential value is a constant value corresponding to the speed V. An X-direction drive command ODWx is issued so that
Similarly, to drive the reticle-side scanning stage 20 at a constant speed, the main control system 23 samples the differential value of the X coordinate data RSx supplied from the laser interferometer 36A,
The first drive command ODR1 is issued so that this differential value becomes a constant value corresponding to the speed V / β.

【００３２】しかしながら、等速制御だけでは、レチク
ル７とウエハ１４との相対的な位置ずれ及び回転が生じ
ている可能性がある。そこで、主制御系２３は、ウエハ
側Ｙステージ２８の位置制御及びレチクル側微動ステー
ジ２１の位置制御を行う。即ち、主制御系２３は、ウエ
ハ１４側のＸ座標データＷＳｘとレチクル７側のＸ座標
データＲＳｘ／βとの差分ＷＳｘ−ＲＳｘ／β、ウエハ
１４側のＹ座標データＷＳｙとレチクル７側のＹ座標デ
ータＲＳｙ／βとの差分ＷＳｙ−ＲＳｙ／β、ウエハ１
４側の回転角データＷＳθとレチクル７側の回転角デー
タＲＳθとの差分ＷＳθ−ＲＳθをサンプリングする。However, the relative displacement between the reticle 7 and the wafer 14 and the rotation of the wafer 14 may occur only by the constant speed control. Therefore, the main control system 23 controls the position of the wafer-side Y stage 28 and the position of the reticle-side fine movement stage 21. That is, the main control system 23 calculates the difference WSx−RSx / β between the X coordinate data WSx on the wafer 14 side and the X coordinate data RSx / β on the reticle 7, the Y coordinate data WSy on the wafer 14 side, and the Y value on the reticle 7 side. Difference WSy−RSy / β from coordinate data RSy / β, wafer 1
The difference WSθ−RSθ between the rotation angle data WSθ on the fourth side and the rotation angle data RSθ on the reticle 7 side is sampled.

【００３３】そして、主制御系２３は、駆動装置３１に
Ｙ方向駆動指令ＯＤＷｙを発し、駆動装置２５に第２の
駆動指令ＯＤＲ２を発して、それら３個の差分が所定の
値になるように位置制御を行う。これにより、図５
（ａ）において、照明領域４３の中心は位置Ａからレチ
クル７のパターン領域外の位置Ｂに達し、図５（ｂ）に
おいて、露光領域４３Ｐの中心は位置ＡＰからウエハ１
４の第１のショット領域５０Ａの外の位置ＢＰに達し
て、１回目のスリットスキャン露光が完了する。The main control system 23 issues a Y-direction drive command ODWy to the drive device 31 and issues a second drive command ODR2 to the drive device 25 so that the difference between the three becomes a predetermined value. Perform position control. As a result, FIG.
5A, the center of the illumination area 43 reaches the position B outside the pattern area of the reticle 7 from the position A, and in FIG.
4 and reaches the position BP outside the first shot area 50A, and the first slit scan exposure is completed.

【００３４】次に、ステップ１０２において、主制御系
２３は、ウエハ側Ｘステージ２７を一度減速してからＸ
方向に加速するように駆動し、ウエハ側Ｙステージ２８
を一度Ｙ方向に加速してから減速する。これと並行し
て、主制御系２３は、レチクル側走査ステージ２０を減
速して、レチクル側微動ステージ２１の位置を基準位置
へリセットする。これにより、図５（ａ）において、照
明領域４３の中心は位置Ｂから更に外側の位置Ｃに達し
て停止し、図５（ｂ）において、露光領域４３Ｐの中心
は位置ＢＰからウエハ１４の第２のショット領域５０Ｂ
の外側の位置ＣＰに達する。この位置ＣＰにおいて、ウ
エハ側Ｘステージ２７は既にＸ方向への等速度走査を開
始している。Next, in step 102, the main control system 23 decelerates the wafer side X stage 27 once,
The wafer side Y stage 28 is driven to accelerate in the
Is once accelerated in the Y direction and then decelerated. Concurrently, the main control system 23 decelerates the reticle-side scanning stage 20 and resets the position of the reticle-side fine movement stage 21 to the reference position. As a result, in FIG. 5A, the center of the illumination area 43 reaches the position C further outside from the position B and stops. In FIG. 5B, the center of the exposure area 43P moves from the position BP to the fourth position of the wafer 14. 2 shot area 50B
To the position CP outside of. At this position CP, the wafer-side X stage 27 has already started scanning at a constant speed in the X direction.

【００３５】次に、ステップ１０３において、主制御系
２３は、ウエハ側Ｘステージ２７をＸ方向に速度Ｖで等
速度で駆動し、ウエハ側Ｙステージ２８の位置を位置制
御により安定させる。これにより、ウエハ側Ｙステージ
２８の加速及び減速による振動が減衰する。また、これ
と並行して、レチクル側走査ステージ２０を−Ｘ方向に
加速する。これにより、図５（ａ）において、照明領域
４３の中心は位置Ｃからレチクル７に近い位置Ｄに達
し、図５（ｂ）において、露光領域４３Ｐの中心は位置
ＣＰからウエハ１４の第２のショット領域５０Ｂに近い
位置ＤＰに達する。位置Ｄにおいて、レチクル側走査ス
テージ２０はＸ方向へ速度Ｖ／βで等速移動を開始して
いる。従って、レチクル７とウエハ１４との相対走査速
度は設計値に達しているが、レチクル７とウエハ１４と
の相対位置及び相対回転角は、ずれている可能性があ
る。Next, in step 103, the main control system 23 drives the wafer side X stage 27 at a constant speed V in the X direction, and stabilizes the position of the wafer side Y stage 28 by position control. As a result, the vibration caused by acceleration and deceleration of the wafer-side Y stage 28 is attenuated. At the same time, the reticle-side scanning stage 20 is accelerated in the −X direction. As a result, in FIG. 5A, the center of the illumination area 43 reaches the position D near the reticle 7 from the position C, and in FIG. 5B, the center of the exposure area 43P moves from the position CP to the second position of the wafer 14. The position DP is reached near the shot area 50B. At the position D, the reticle-side scanning stage 20 starts moving at a constant speed in the X direction at a speed V / β. Therefore, the relative scanning speed between the reticle 7 and the wafer 14 has reached the design value, but the relative position and the relative rotation angle between the reticle 7 and the wafer 14 may be shifted.

【００３６】そこでステップ１０４に移行して、主制御
系２３は、ウエハ側Ｘステージ２７を速度ＶでＸ方向に
等速で駆動し、レチクル側走査ステージ２０を速度Ｖ／
βで−Ｘ方向に等速で駆動する。更に、主制御系２３
は、ウエハ側Ｙステージ２８の位置制御及びレチクル側
微動ステージ２１の位置制御を行う。即ち、主制御系２
３は、ウエハ１４側のＸ座標データＷＳｘとレチクル７
側のＸ座標データＲＳｘ／βとの差分ＷＳｘ−ＲＳｘ／
β、ウエハ１４側のＹ座標データＷＳｙとレチクル７側
のＹ座標データＲＳｙ／βとの差分ＷＳｙ−ＲＳｙ／
β、ウエハ１４側の回転角データＷＳθとレチクル７側
の回転角データＲＳθとの差分ＷＳθ−ＲＳθをサンプ
リングする。そして、主制御系２３は、駆動装置３１に
Ｙ方向駆動指令ＯＤＷｙを発し、駆動装置２５に第２の
駆動指令ＯＤＲ２を発して、それら３個の差分が所定の
値になるように位置制御を行う。Then, proceeding to step 104, the main control system 23 drives the wafer side X stage 27 at a constant speed in the X direction at the speed V, and drives the reticle side scanning stage 20 at the speed V / V.
Drive at a constant speed in the -X direction at β. Further, the main control system 23
Performs position control of the wafer-side Y stage 28 and position control of the reticle-side fine movement stage 21. That is, the main control system 2
3 is the X coordinate data WSx on the wafer 14 side and the reticle 7
WSx−RSx / with the X coordinate data RSx / β on the side
β, the difference WSy−RSy / between the Y coordinate data WSy on the wafer 14 side and the Y coordinate data RSy / β on the reticle 7 side.
β, the difference WSθ−RSθ between the rotation angle data WSθ on the wafer 14 side and the rotation angle data RSθ on the reticle 7 side is sampled. Then, the main control system 23 issues a Y-direction drive command ODWy to the drive device 31, issues a second drive command ODR2 to the drive device 25, and performs position control so that the difference between the three becomes a predetermined value. Do.

【００３７】このようにしてレチクル７とウエハ１４と
の位置ずれが補正される。このとき、図５（ａ）に示す
ように、照明領域４３の中心はレチクル７のパターン領
域の外側の位置Ｅに在り、図５（ｂ）に示すように、露
光領域４３Ｐの中心はウエハ１４の第２のショット領域
５０Ｂの外側の位置ＥＰに在る。その後、ステップ１０
５において、レチクル７とウエハ１４との等速度駆動及
び位置ずれ補正が完了した時点で、図５（ａ）に示すよ
うに、照明領域４３の中心はレチクル７のパターン領域
の直前の位置Ｆに在り、図５（ｂ）に示すように、露光
領域４３Ｐの中心はウエハ１４の第２のショット領域５
０Ｂの直前の位置ＦＰに在る。Thus, the displacement between the reticle 7 and the wafer 14 is corrected. At this time, as shown in FIG. 5A, the center of the illumination area 43 is located at a position E outside the pattern area of the reticle 7, and as shown in FIG. At the position EP outside the second shot area 50B. Then, step 10
5, at the time when the reticle 7 and the wafer 14 have been driven at the same speed and the displacement has been corrected, the center of the illumination area 43 is located at the position F immediately before the pattern area of the reticle 7 as shown in FIG. As shown in FIG. 5B, the center of the exposure region 43P is
It is at the position FP just before 0B.

【００３８】そして、ステップ１０１と同様の制御を行
うことにより、図５（ａ）に示すように、照明領域４３
はレチクル７を中心の位置Ｇまで相対的に走査し、図５
（ｂ）に示すように、露光領域４３Ｐはウエハ１４の第
２のショット領域５０Ｂを中心の位置ＧＰまで相対的に
走査する。その後、ステップ１０１以下の動作を繰り返
すことにより、ウエハ１４の第２の前ショット領域５０
Ｂ及びその次のショット領域へのレチクル７のパターン
の縮小像の露光が行われる。Then, by performing the same control as in step 101, as shown in FIG.
Scans the reticle 7 relatively to the center position G, and FIG.
As shown in (b), the exposure area 43P relatively scans the second shot area 50B of the wafer 14 to the center position GP. Thereafter, by repeating the operation from step 101 onward, the second previous shot area 50 of the wafer 14 is
Exposure of a reduced image of the pattern of the reticle 7 to B and the next shot area is performed.

【００３９】上述のように本例によれば、レチクル７側
のステージが相対走査用のレチクル側走査ステージ２０
と位置合わせ用のレチクル側微動ステージ２１とに分離
され、且つレチクル側走査ステージ２０とレチクル側微
動ステージ２１とが独立に駆動できるようになってい
る。このため、レチクル７及びウエハ１４をそれぞれ定
速度で駆動している際にも、レチクル７とウエハ１４と
の位置ずれを容易且つ迅速に補正できる。従って、レチ
クル７のパターンの像を歪なくウエハ１４の各ショット
領域に露光することができる。As described above, according to the present embodiment, the stage on the reticle 7 side is the reticle side scanning stage 20 for relative scanning.
And a reticle-side fine movement stage 21 for positioning, and the reticle-side scanning stage 20 and the reticle-side fine movement stage 21 can be driven independently. For this reason, even when the reticle 7 and the wafer 14 are each driven at a constant speed, the displacement between the reticle 7 and the wafer 14 can be easily and quickly corrected. Therefore, an image of the pattern of the reticle 7 can be exposed to each shot area of the wafer 14 without distortion.

【００４０】更に、本実施例では、レチクル側走査ステ
ージ２０の上にレチクル側微動ステージ２１が搭載され
ている。そこで、レチクル側走査ステージ２０及びレチ
クル側微動ステージ２１の重量をそれぞれＭ１及びＭ２
とすると、相対走査用のリニアモーターは（Ｍ１＋Ｍ
２）の重量のステージ２０，２１を駆動するのに対し
て、図２のアクチュエータ３８，４０，４２は重量Ｍ２
のレチクル側微動ステージ２１の駆動を行うことにな
る。従って、位置補正の応答性が良好である。また、レ
チクル側走査ステージ２０上でレチクル側微動ステージ
２１に加速度ａを与えたときに、レチクル側走査ステー
ジ２０に作用する反作用によるレチクル側走査ステージ
２０の加速度をｂとすると、次式が成立する。Ｍ２・ａ
＝（Ｍ１＋Ｍ２）ｂFurther, in this embodiment, a reticle-side fine movement stage 21 is mounted on the reticle-side scanning stage 20. Therefore, the weights of the reticle-side scanning stage 20 and the reticle-side fine movement stage 21 are set to M1 and M2, respectively.
Then, the linear motor for relative scanning is (M1 + M
2), the actuators 38, 40 and 42 shown in FIG.
Of the reticle-side fine movement stage 21 is performed. Therefore, the responsiveness of the position correction is good. Further, when acceleration a is applied to the reticle-side fine movement stage 21 on the reticle-side scanning stage 20 and the acceleration of the reticle-side scanning stage 20 due to a reaction acting on the reticle-side scanning stage 20 is b, the following equation is established. . M2 ・ a
= (M1 + M2) b

【００４１】従って、加速度ｂは加速度ａよりも小さく
なり、レチクル側微動ステージ２１の位置制御を行って
も、レチクル側走査ステージ２０の定速走査はほとんど
影響されない。このため、安定した速度制御が行われ
る。なお、上述実施例では、投影光学系１３として屈折
光学系が使用されているため、レチクル７上の照明領域
４３は矩形のスリット状である。これに対して、投影光
学系１３として反射屈折光学系を使用した場合等には、
レチクル７上の照明領域４３は円弧状に形成されること
がある。Therefore, the acceleration b becomes smaller than the acceleration a, and even if the position of the reticle-side fine movement stage 21 is controlled, the constant-speed scanning of the reticle-side scanning stage 20 is hardly affected. Therefore, stable speed control is performed. In the above-described embodiment, since the refractive optical system is used as the projection optical system 13, the illumination area 43 on the reticle 7 has a rectangular slit shape. On the other hand, when a catadioptric system is used as the projection optical system 13,
The illumination area 43 on the reticle 7 may be formed in an arc shape.

【００４２】なお、本発明は上述実施例に限定されず本
発明の要旨を逸脱しない範囲で種々の構成を取り得るこ
とは勿論である。It should be noted that the present invention is not limited to the above-described embodiment, but can adopt various configurations without departing from the spirit of the present invention.

【００４３】[0043]

【発明の効果】本発明によれば、マスクを相対走査する
ための第１のマスク駆動手段（第１駆動手段）とマスク
の位置調整を行うための第２のマスク駆動手段（第２駆
動手段）とを分離したので、マスク（第１物体）及び感
光基板（第２物体）共に等速性を保つための最適制御と
相対位置合わせのための最適制御とを分離でき、マスク
及び感光基板の相対走査方向の駆動並びにマスクと感光
基板との位置合わせを同時に高精度に行うことができる
利点がある。また、第２のマスク駆動手段は相対走査の
ための機構を含まず軽量にできるため、マスクと感光基
板との位置合わせを高い応答性で実行できる。According to the present invention, the first mask driving means (first driving means) for relative scanning the mask and the second mask driving means for adjusting the position of the mask (second drive
Moving means) , the optimal control for maintaining the uniform velocity of the mask (first object) and the photosensitive substrate (second object) and the optimal control for relative positioning can be separated from each other. There is an advantage that the driving of the substrate in the relative scanning direction and the alignment between the mask and the photosensitive substrate can be simultaneously performed with high accuracy. Further, since the second mask driving means does not include a mechanism for relative scanning and can be reduced in weight, alignment between the mask and the photosensitive substrate can be performed with high responsiveness.

[Brief description of the drawings]

【図１】本発明による投影露光装置の一実施例の全体を
示す構成図である。FIG. 1 is a configuration diagram showing an entire embodiment of a projection exposure apparatus according to the present invention.

【図２】図１のレチクル側ステージ系を示す平面図であ
る。FIG. 2 is a plan view showing a reticle-side stage system shown in FIG. 1;

【図３】図１のウエハ側ステージを系示す平面図であ
る。FIG. 3 is a plan view showing a system on the wafer side stage of FIG. 1;

【図４】その実施例のスリットスキャン露光動作時の制
御方法の一例を示すフローチャートである。FIG. 4 is a flowchart illustrating an example of a control method during a slit scan exposure operation according to the embodiment.

【図５】（ａ）はレチクルと照明領域との相対位置関係
を示す平面図、（ｂ）は図５（ａ）に対応するウエハと
露光領域との相対位置関係を示す平面図である。5A is a plan view showing a relative positional relationship between a reticle and an illumination area, and FIG. 5B is a plan view showing a relative positional relationship between a wafer and an exposure area corresponding to FIG. 5A.

【図６】従来のスリットスキャン露光方式の投影露光装
置を示す構成図である。FIG. 6 is a block diagram showing a conventional slit scan exposure type projection exposure apparatus.

[Explanation of symbols]

７レチクル１４ウエハ１９レチクル側ベース２０レチクル側走査ステージ２１レチクル側微動ステージ２３主制御系２６ウエハ側ベース２７ウエハ側Ｘステージ２８ウエハ側Ｙステージ３５，３６Ａ，３６Ｂ，４７Ａ，４７Ｂ，４８レーザ
ー干渉計４３スリット状の照明領域４３Ｐスリット状の露光領域7 Reticle 14 Wafer 19 Reticle-side base 20 Reticle-side scanning stage 21 Reticle-side fine movement stage 23 Main control system 26 Wafer-side base 27 Wafer-side X-stage 28 Wafer-side Y-stage 35, 36A, 36B, 47A, 47B, 48 Laser interferometer 43 Slit illumination area 43P Slit exposure area

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.⁷，ＤＢ名) H01L 21/027 G03B 27/32 G03F 7/20 521 G03F 9/00 H01L 21/68 ──────────────────────────────────────────────────続き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/027 G03B 27/32 G03F 7/20 521 G03F 9/00 H01L 21/68

Claims

(57) [Claims]

1. An illumination optical system for illuminating a mask on which a transfer pattern is formed with exposure light with uniform illuminance, a field stop for setting an illumination area on the mask by the exposure light, and transfer of the mask. And a projection optical system for projecting an image of a pattern for use on a photosensitive substrate, by synchronously scanning the mask and the photosensitive substrate in the scanning direction of the illumination area by the exposure light, In a scanning type exposure apparatus for exposing an image of a transfer pattern in an area wider than an illumination area by exposure light onto the photosensitive substrate, the mask is moved in the scanning direction with respect to the illumination area by exposure light. A first mask driving unit that scans at a constant speed, and a second unit that causes the mask to perform translation and rotation in a plane parallel to the mask independently of the first mask driving unit.
A mask driving means, a mask position detecting means for detecting a position and a rotation angle of the mask in a plane parallel to the mask, and a mask conjugate image obtained by projecting a pattern image for transfer of the mask. Substrate driving means for scanning the photosensitive substrate at a constant speed in a direction conjugate to the scanning direction; substrate position detecting means for detecting a position and a rotation angle of the photosensitive substrate in a plane parallel to the photosensitive substrate; in accordance with the rotation angle of the substrate detected by the position detecting means, scanning exposure apparatus characterized by a control means for controlling the position and rotation angle of the mask through the second mask drive means .

For 2. A scanning exposure, a scanning exposure apparatus that synchronously moving the first and second objects, the moving one of the objects of the first object and the second object 1 A driving unit, the first object being independent of the first driving unit when the first driving unit is moving the one object so that the one object is scanned by an exposure beam; A second driving unit for moving the first object and the second object so that the other of the first object and the second object is scanned by the exposure beam. And a third driving means for moving the other object.

3. The scanning exposure apparatus according to claim 2, wherein said second driving means rotates said one object.

Wherein said second drive means, scanning exposure apparatus according to claim 3, characterized in that rotating the one object to the center of the irradiation area of the exposure beam as an axis.

5. The position of the center of rotation of said one object, scanning exposure according to claim 3 or 4, characterized in that changes in accordance with the synchronous movement of the one object on the object of said one apparatus.

6. The apparatus according to claim 2, wherein said second driving means moves said one object in a two-dimensional direction.
The scanning exposure apparatus according to claim 1.

Wherein said first drive means, the scanning of any one of claims 2 to 6, characterized in that it is movable the one object over long distances than the second driving means Type exposure equipment.

8. The method according to claim 1, wherein the second driving means moves while the first driving means moves the one object.
The scanning exposure apparatus according to any one of claims 2 to 7, wherein the one object is moved.

9. The first driving means has a moving member which moves while supporting the second driving means, and the second driving means moves the one object with respect to the moving member. 9. The scanning exposure apparatus according to claim 8, wherein:

Wherein said second drive means, scanning exposure apparatus according to claim 9, characterized in that it is capable of moving the one object without the weight of the moving member.

11. The scanning exposure apparatus according to claim 2, wherein said second driving means has an actuator.

12. The scanning of any one of claims 2-11, characterized in that moving the object corresponding with the electromagnetic force and the first driving means and the third drive means Type exposure equipment.

13. The apparatus according to claim 2, further comprising an air guide for moving the corresponding object by using the first driving means and the third driving means. 4. The scanning exposure apparatus according to claim 1.

14. A measuring device for measuring relative position information between the first object and the second object, wherein the second driving device is configured to measure the relative position information based on a measurement result of the measuring device. 14. The scanning type exposure apparatus according to claim 2, wherein the scanning type exposure apparatus moves an object.

15. The apparatus according to claim 14 , wherein said measuring means has first measuring means for measuring information on said first object and second measuring means for measuring information on said second object.
4. The scanning exposure apparatus according to claim 1.

16. The scanning exposure apparatus according to claim 15, wherein said first measuring means and said second measuring means each measure position information on the direction of said synchronous movement.

17. The scanning exposure according to claim 15, wherein the first measuring means and the second measuring means measure position information in a direction intersecting with the direction of the synchronous movement. apparatus.

18. The scanning exposure apparatus according to claim 15, wherein said first measuring means and said second measuring means each measure rotation information of said object.

19. The apparatus according to claim 19, further comprising : a holding member for holding said one object and movable by said first driving means and said second driving means; and an interferometer system for measuring said one object. 14. The scanning exposure apparatus according to claim 2, wherein the member has a reflection surface used together with the interferometer system.

20. The scanning exposure apparatus according to claim 19, wherein the interferometer system measures position information of the one object in the direction of the synchronous movement.

21. The scanning exposure apparatus according to claim 19, wherein the interferometer system measures position information of the one object in a direction intersecting with the direction of the synchronous movement.

22. The scanning exposure apparatus according to claim 19, wherein said interferometer system measures rotation information of said one object.

23. The apparatus according to claim 2, wherein the first driving means and the third driving means move the one object and the other object at different speeds.
The scanning exposure apparatus according to claim 1.

24. A projection system for projecting an image of the pattern of the one object onto the other object, wherein the one object and the other object are in accordance with a reduction magnification of the projection system. The scanning exposure apparatus according to claim 23, wherein the scanning exposure apparatus moves at different speeds.

25. A projection system for projecting an image of the pattern of the one object onto the other object, wherein the second driving means considers a projection magnification of the one of the projection systems. 24. The scanning exposure apparatus according to claim 2, wherein the scanning exposure apparatus moves an object.

26. A scanning exposure apparatus according to claim 2, wherein movement of said one object by said second driving means is performed by position control.

27. An illumination optical system for illuminating a mask on which a transfer pattern is formed with exposure light, a field stop for setting an irradiation area on the mask with the exposure light, and an image of the transfer pattern of the mask. A projection system for reducing and projecting the light onto the substrate, substrate driving means for scanning the substrate at a constant speed with respect to an irradiation area of the exposure light, and a reduction ratio of the projection system in synchronization with the scanning of the substrate. A mask driving unit that scans the mask with respect to an irradiation area by the exposure light at a speed different from that of the substrate, wherein the mask driving unit scans the mask at a constant speed. A first driving unit, a holding member that holds the mask, and a mask that moves the holding member with respect to the first driving unit by a driving mechanism that is fixed to the first driving unit. A second driving unit that moves in a two-dimensional direction and a rotating direction within a predetermined plane.

28. The apparatus according to claim 28 , further comprising detecting means for detecting position information and rotation angle information of said mask, wherein said second driving means moves said mask based on a detection result of said detecting means. 28. The scanning exposure apparatus according to 27.

29. The scanning exposure apparatus according to claim 28, wherein said detecting means includes an interferometer having at least three measurement axes for monitoring a reflection surface provided on said holding member.

30. A scanning exposure apparatus according to claim 29, wherein said interferometer is fixed to a base supporting said mask driving means.

31. The interferometer has two measurement axes used in a direction of the synchronous movement of the mask and one measurement axis used in a direction intersecting the direction of the synchronous movement of the mask. The scanning exposure apparatus according to claim 29.

32. The second driving means has three actuators as a driving mechanism fixed to the first driving means, and the three actuators are arranged so that the mask rotates about the center of the irradiation area as an axis. The scanning exposure apparatus according to any one of claims 27 to 31, wherein a scanning exposure apparatus is used.

33. An illumination optical system for illuminating a mask on which a transfer pattern is formed with exposure light, a field stop for setting an irradiation area on the mask with the exposure light, and a mask for transferring the mask transfer pattern. A projection system for reducing and projecting an image on a substrate, a substrate driving unit having a substrate holding member for holding the substrate, and scanning the substrate with respect to an irradiation area by the exposure light, in synchronization with the scanning of the substrate Mask driving means for scanning the mask with respect to the irradiation area by the exposure light at a different speed from the substrate according to the reduction ratio of the projection system,
A scanning exposure apparatus comprising: a mask position detecting unit that detects position information of the mask; and a substrate position detecting unit that detects position information of the substrate. A first driving unit for scanning at a speed, a mask holding member for holding the mask, and the mask holding member being moved relative to the first driving unit by a driving mechanism fixed to the first driving unit. Second driving means for moving the mask in a predetermined plane, wherein the first driving means is speed-controlled so that the moving speed of the mask becomes a predetermined speed, and the second driving means is the mask position detecting means A scanning exposure apparatus, wherein the position of the mask and the substrate are controlled so as to have a predetermined positional relationship based on the substrate and the substrate position detecting means.

34. The mask position detecting means includes an interferometer having at least three measurement axes for monitoring a reflection surface provided on the mask holding member, and the substrate position detecting means is provided on the substrate holding member. An interferometer having at least three measurement axes for monitoring the reflected surface, wherein the second driving means translates and rotates the mask based on a reduction ratio of the projection system and an output value of the interferometer. The scanning exposure apparatus according to claim 33, wherein:

35. The scanning exposure apparatus according to claim 34, wherein the speed control of said first driving means is performed based on a differential value of an output of said interferometer.

36. A device manufacturing method including a step of performing exposure using the scanning exposure apparatus according to claim 1. Description:

37. A scanning exposure method for synchronously moving a first object and a second object, wherein one of the first object and the second object is scanned so as to be scanned by an exposure beam. The object is moved using a first driving unit, and when the first driving unit is moving the one object, the first driving unit is independently driven using a second driving unit. Moving the object, independently of the first driving means and the second driving means, so that the other of the first object and the second object is scanned by the exposure beam, Third object
Scanning exposure method, wherein the scanning exposure method is performed by using the driving means.

38. The scanning exposure method according to claim 37, wherein said second driving means rotates said one object.

39. The scanning exposure method according to claim 38, wherein said second driving means rotates said one object about a center of an irradiation area of said exposure beam as an axis.

40. The position of the center of rotation of said one object is
40. The scanning exposure method according to claim 38, wherein the scanning exposure method changes on the one object in accordance with the synchronous movement of the one object.

41. The scanning exposure method according to claim 37, wherein said second driving means moves said one object in a two-dimensional direction.

42. The scanning device according to claim 37, wherein said first driving means is capable of moving said one object over a longer distance than said second driving means. Exposure method.

43. The apparatus according to claim 3, wherein the second driving means moves the one object while moving in association with the movement of the one object by the first driving means.
43. The scanning exposure method according to any one of 7 to 42.

44. The scanning device according to claim 37, wherein said first driving means and said third driving means move the corresponding objects by using an electromagnetic force. Exposure method.

45. The apparatus according to claim 37 , wherein during said synchronous movement, said one object is moved by said second drive means to adjust the position of said one object and said other object. The scanning exposure method according to any one of the above.

46. The method according to claim 46, wherein a relative positional relationship between the first object and the second object is measured, and the one of the objects is moved by the second driving means based on the measurement result. 46. The scanning exposure method according to any one of 37 to 45.

47. The scanning exposure method according to claim 46, wherein the relative positional relationship is measured by independently measuring information on the first object and information on the second object. .

48. The scanning exposure method according to claim 47, wherein said information includes position information on a direction of said synchronous movement.

49. The scanning exposure method according to claim 47, wherein the information includes position information on a direction intersecting with the direction of the synchronous movement.

50. The scanning exposure method according to claim 47, wherein said information includes rotation information of said object.

51. The apparatus according to claim 37, wherein the one object moved by the first driving means and the second driving means is measured using an interferometer system. Scanning exposure method.

52. The scanning exposure method according to claim 51, wherein said interferometer system measures position information of said one object in the direction of said synchronous movement.

53. The scanning exposure method according to claim 51, wherein the interferometer system measures position information of the one object in a direction intersecting with the direction of the synchronous movement.

54. The scanning exposure method according to claim 51, wherein said interferometer system measures rotation information of said one object.

55. The apparatus according to claim 37, wherein the first driving means and the third driving means move the one object and the other object at different speeds. 6. The scanning exposure method according to the above item.

56. The one object and the other object move at different speeds according to a reduction ratio of a projection system for projecting an image of a pattern of the one object onto the other object. 56. The scanning exposure method according to claim 55, wherein:

57. The second driving means for moving the one object in consideration of a projection magnification of a projection system for projecting an image of the pattern of the one object onto the other object. The scanning exposure method according to any one of claims 37 to 56.

58. The scanning exposure method according to claim 37, wherein movement of said one object by said second driving means is performed by position control.

59. The scanning exposure method according to claim 37, wherein movement of said one object by said first driving means is performed by speed control.

A device manufacturing method using the scanning exposure method according to any one of claims 37 to 59.