TWI319601B - Vorrichtung und verfahren zum thermischen behandeln von halbleiterwafern - Google Patents

Vorrichtung und verfahren zum thermischen behandeln von halbleiterwafern

Info

Publication number
TWI319601B
TWI319601B TW092121596A TW92121596A TWI319601B TW I319601 B TWI319601 B TW I319601B TW 092121596 A TW092121596 A TW 092121596A TW 92121596 A TW92121596 A TW 92121596A TW I319601 B TWI319601 B TW I319601B
Authority
TW
Taiwan
Prior art keywords
verfahren zum
vorrichtung und
und verfahren
behandeln von
halbleiterwafern
Prior art date
Application number
TW092121596A
Other languages
English (en)
Other versions
TW200414365A (en
Inventor
Roters Georg
Frigge Steffen
Pin Tay Sing
Zhi Hu Yao
Hayn Regina
Uwe Sachse Jens
Schoer Erwin
Kegel Wilhelm
Original Assignee
Mattson Thermal Products Gmbh
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mattson Thermal Products Gmbh, Infineon Technologies Ag filed Critical Mattson Thermal Products Gmbh
Publication of TW200414365A publication Critical patent/TW200414365A/zh
Application granted granted Critical
Publication of TWI319601B publication Critical patent/TWI319601B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32105—Oxidation of silicon-containing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW092121596A 2002-08-12 2003-08-07 Vorrichtung und verfahren zum thermischen behandeln von halbleiterwafern TWI319601B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10236896A DE10236896B4 (de) 2002-08-12 2002-08-12 Vorrichtung und Verfahren zum thermischen Behandeln von Halbleiterwafern

Publications (2)

Publication Number Publication Date
TW200414365A TW200414365A (en) 2004-08-01
TWI319601B true TWI319601B (en) 2010-01-11

Family

ID=31968963

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092121596A TWI319601B (en) 2002-08-12 2003-08-07 Vorrichtung und verfahren zum thermischen behandeln von halbleiterwafern

Country Status (5)

Country Link
US (1) US7151060B2 (zh)
KR (1) KR100769382B1 (zh)
DE (1) DE10236896B4 (zh)
TW (1) TWI319601B (zh)
WO (1) WO2004023529A2 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2007049413A1 (ja) * 2005-10-28 2009-04-30 独立行政法人産業技術総合研究所 半導体製造装置及び半導体装置
KR100748176B1 (ko) * 2005-11-02 2007-08-10 아프로시스템 주식회사 열처리 장치
US8093157B2 (en) * 2007-07-03 2012-01-10 Mattson Technology, Inc. Advanced processing technique and system for preserving tungsten in a device structure
US7951728B2 (en) * 2007-09-24 2011-05-31 Applied Materials, Inc. Method of improving oxide growth rate of selective oxidation processes
DE102008012333B4 (de) * 2008-03-03 2014-10-30 Mattson Thermal Products Gmbh Vorrichtung zum thermischen Behandeln von scheibenförmigen Substraten
US9640412B2 (en) * 2009-11-20 2017-05-02 Applied Materials, Inc. Apparatus and method for enhancing the cool down of radiatively heated substrates
US9312260B2 (en) * 2010-05-26 2016-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits and manufacturing methods thereof
KR101404069B1 (ko) * 2012-12-20 2014-06-11 주식회사 나래나노텍 유지보수가 용이한 기판 열처리 챔버 및 방법, 및 이를 구비한 기판 열처리 장치
KR101374752B1 (ko) * 2012-12-21 2014-03-17 주식회사 나래나노텍 기판 온도 측정 및 제어 시스템을 구비한 기판 열처리 챔버, 장치 및 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132136A (ja) * 1983-01-19 1984-07-30 Hitachi Ltd 半導体装置の製造方法
JPH0831761A (ja) * 1994-05-13 1996-02-02 Toshiba Corp 半導体基板の熱処理炉
DE4437361C2 (de) * 1994-10-19 1997-05-15 Ast Elektronik Gmbh Verfahren und Vorrichtung für die optische Schnellheizbehandlung empfindlicher elektronischer Bauelemente, insbesondere Halbleiterbauelemente
US5861609A (en) * 1995-10-02 1999-01-19 Kaltenbrunner; Guenter Method and apparatus for rapid thermal processing
US5837555A (en) * 1996-04-12 1998-11-17 Ast Electronik Apparatus and method for rapid thermal processing
JPH09306860A (ja) * 1996-05-13 1997-11-28 Kokusai Electric Co Ltd 熱処理炉
JPH10335652A (ja) * 1997-05-30 1998-12-18 Hitachi Ltd 半導体集積回路装置の製造方法
JP4283904B2 (ja) 1997-07-11 2009-06-24 株式会社東芝 半導体装置の製造方法
US6291868B1 (en) * 1998-02-26 2001-09-18 Micron Technology, Inc. Forming a conductive structure in a semiconductor device
US6245605B1 (en) 1998-09-29 2001-06-12 Texas Instruments Incorporated Method to protect metal from oxidation during poly-metal gate formation in semiconductor device manufacturing
US6534401B2 (en) * 2000-04-27 2003-03-18 Applied Materials, Inc. Method for selectively oxidizing a silicon/metal composite film stack
DE10060628A1 (de) * 2000-12-06 2002-01-31 Infineon Technologies Ag RTP-Reaktor sowie dazugehöriges Betriebsverfahren
DE10120523A1 (de) * 2001-04-26 2002-10-31 Infineon Technologies Ag Verfahren zur Minimierung der Wolframoxidausdampfung bei der selektiven Seitenwandoxidation von Wolfram-Silizium-Gates

Also Published As

Publication number Publication date
DE10236896A1 (de) 2004-04-01
KR20050026708A (ko) 2005-03-15
KR100769382B1 (ko) 2007-10-22
US20060105584A1 (en) 2006-05-18
DE10236896B4 (de) 2010-08-12
WO2004023529A2 (de) 2004-03-18
WO2004023529A3 (de) 2004-05-13
TW200414365A (en) 2004-08-01
US7151060B2 (en) 2006-12-19

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