TWI319160B - Memory card capable of supporting various voltage supply and control chip and method of supporting voltage thereof - Google Patents

Memory card capable of supporting various voltage supply and control chip and method of supporting voltage thereof

Info

Publication number
TWI319160B
TWI319160B TW094123399A TW94123399A TWI319160B TW I319160 B TWI319160 B TW I319160B TW 094123399 A TW094123399 A TW 094123399A TW 94123399 A TW94123399 A TW 94123399A TW I319160 B TWI319160 B TW I319160B
Authority
TW
Taiwan
Prior art keywords
supporting
memory card
control chip
voltage
card capable
Prior art date
Application number
TW094123399A
Other languages
English (en)
Other versions
TW200703120A (en
Inventor
Chin Yi Chiang
Chien Zhi Chen
Original Assignee
Via Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Via Tech Inc filed Critical Via Tech Inc
Priority to TW094123399A priority Critical patent/TWI319160B/zh
Priority to US11/456,235 priority patent/US7596047B2/en
Publication of TW200703120A publication Critical patent/TW200703120A/zh
Application granted granted Critical
Publication of TWI319160B publication Critical patent/TWI319160B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Sources (AREA)
  • Read Only Memory (AREA)
  • Credit Cards Or The Like (AREA)
TW094123399A 2005-07-11 2005-07-11 Memory card capable of supporting various voltage supply and control chip and method of supporting voltage thereof TWI319160B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW094123399A TWI319160B (en) 2005-07-11 2005-07-11 Memory card capable of supporting various voltage supply and control chip and method of supporting voltage thereof
US11/456,235 US7596047B2 (en) 2005-07-11 2006-07-10 Memory card and control chip capable of supporting various voltage supplies and method of supporting voltages thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094123399A TWI319160B (en) 2005-07-11 2005-07-11 Memory card capable of supporting various voltage supply and control chip and method of supporting voltage thereof

Publications (2)

Publication Number Publication Date
TW200703120A TW200703120A (en) 2007-01-16
TWI319160B true TWI319160B (en) 2010-01-01

Family

ID=37618175

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094123399A TWI319160B (en) 2005-07-11 2005-07-11 Memory card capable of supporting various voltage supply and control chip and method of supporting voltage thereof

Country Status (2)

Country Link
US (1) US7596047B2 (zh)
TW (1) TWI319160B (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006057049A1 (ja) * 2004-11-26 2006-06-01 Kabushiki Kaisha Toshiba カードおよびホスト機器
US7793059B2 (en) * 2006-01-18 2010-09-07 Apple Inc. Interleaving policies for flash memory
US20070174641A1 (en) * 2006-01-25 2007-07-26 Cornwell Michael J Adjusting power supplies for data storage devices
US7702935B2 (en) * 2006-01-25 2010-04-20 Apple Inc. Reporting flash memory operating voltages
US7861122B2 (en) * 2006-01-27 2010-12-28 Apple Inc. Monitoring health of non-volatile memory
KR101177555B1 (ko) * 2006-02-01 2012-08-27 삼성전자주식회사 메모리 카드, 메모리 카드의 데이터 구동 방법, 그리고메모리 카드 시스템
TWI309836B (en) * 2006-08-21 2009-05-11 Realtek Semiconductor Corp A memory card reader controller with spread spectrum clock
US7675802B2 (en) * 2006-09-29 2010-03-09 Sandisk Corporation Dual voltage flash memory card
US7656735B2 (en) * 2006-09-29 2010-02-02 Sandisk Corporation Dual voltage flash memory methods
US7639540B2 (en) * 2007-02-16 2009-12-29 Mosaid Technologies Incorporated Non-volatile semiconductor memory having multiple external power supplies
US20080288712A1 (en) 2007-04-25 2008-11-20 Cornwell Michael J Accessing metadata with an external host
US7913032B1 (en) 2007-04-25 2011-03-22 Apple Inc. Initiating memory wear leveling
US8595572B2 (en) * 2009-04-08 2013-11-26 Google Inc. Data storage device with metadata command
US8566508B2 (en) * 2009-04-08 2013-10-22 Google Inc. RAID configuration in a flash memory data storage device
US20100287217A1 (en) * 2009-04-08 2010-11-11 Google Inc. Host control of background garbage collection in a data storage device
US20100262979A1 (en) * 2009-04-08 2010-10-14 Google Inc. Circular command queues for communication between a host and a data storage device
WO2011025557A1 (en) 2009-08-31 2011-03-03 Rambus Inc. Forwarding signal supply voltage in data transmission system
EP2847207B1 (en) 2012-05-08 2019-03-27 Nicox Ophthalmics, Inc. Fluticasone propionate nanocrystals
CN103400600B (zh) * 2013-08-26 2016-05-04 深圳芯邦科技股份有限公司 控制flash芯片上电的方法及装置
JP2018156717A (ja) * 2017-03-21 2018-10-04 東芝メモリ株式会社 半導体記憶装置
CN111399613B (zh) 2018-12-14 2023-03-03 华为技术有限公司 一种存储装置以及电子设备

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100231393B1 (ko) * 1991-04-18 1999-11-15 나시모토 류조 반도체집적회로장치
JP2527144Y2 (ja) 1992-11-19 1997-02-26 モレックス インコーポレーテッド プリント回路基板接続用電気コネクタ
JPH10269193A (ja) * 1997-03-26 1998-10-09 Mitsubishi Electric Corp フラッシュメモリ及びマイクロコンピュータ
US6577535B2 (en) 2001-02-16 2003-06-10 Sandisk Corporation Method and system for distributed power generation in multi-chip memory systems
US6826107B2 (en) * 2002-08-01 2004-11-30 Saifun Semiconductors Ltd. High voltage insertion in flash memory cards
JP4653960B2 (ja) 2003-08-07 2011-03-16 ルネサスエレクトロニクス株式会社 メモリカードおよび不揮発性メモリ混載マイコン
US6906582B2 (en) * 2003-08-29 2005-06-14 Freescale Semiconductor, Inc. Circuit voltage regulation
US20050086413A1 (en) * 2003-10-15 2005-04-21 Super Talent Electronics Inc. Capacity Expansion of Flash Memory Device with a Daisy-Chainable Structure and an Integrated Hub
KR100884235B1 (ko) * 2003-12-31 2009-02-17 삼성전자주식회사 불휘발성 메모리 카드

Also Published As

Publication number Publication date
US20070008801A1 (en) 2007-01-11
US7596047B2 (en) 2009-09-29
TW200703120A (en) 2007-01-16

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