TWI317753B - Cmp of noble metals - Google Patents

Cmp of noble metals

Info

Publication number
TWI317753B
TWI317753B TW093116551A TW93116551A TWI317753B TW I317753 B TWI317753 B TW I317753B TW 093116551 A TW093116551 A TW 093116551A TW 93116551 A TW93116551 A TW 93116551A TW I317753 B TWI317753 B TW I317753B
Authority
TW
Taiwan
Prior art keywords
cmp
noble metals
noble
metals
Prior art date
Application number
TW093116551A
Other languages
English (en)
Other versions
TW200524995A (en
Inventor
Rege Thesauro Francesco De
Vlasta Brusic
Benjamin P Bayer
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of TW200524995A publication Critical patent/TW200524995A/zh
Application granted granted Critical
Publication of TWI317753B publication Critical patent/TWI317753B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW093116551A 2003-06-30 2004-06-09 Cmp of noble metals TWI317753B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/610,407 US7160807B2 (en) 2003-06-30 2003-06-30 CMP of noble metals

Publications (2)

Publication Number Publication Date
TW200524995A TW200524995A (en) 2005-08-01
TWI317753B true TWI317753B (en) 2009-12-01

Family

ID=33541142

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093116551A TWI317753B (en) 2003-06-30 2004-06-09 Cmp of noble metals

Country Status (7)

Country Link
US (1) US7160807B2 (zh)
EP (1) EP1639053B1 (zh)
JP (1) JP2007526626A (zh)
KR (1) KR101117439B1 (zh)
CN (1) CN1813038A (zh)
TW (1) TWI317753B (zh)
WO (1) WO2005005561A1 (zh)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7563383B2 (en) 2004-10-12 2009-07-21 Cabot Mircroelectronics Corporation CMP composition with a polymer additive for polishing noble metals
US7504044B2 (en) 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7921425B2 (en) * 2005-03-14 2011-04-05 Cisco Technology, Inc. Techniques for allocating computing resources to applications in an embedded system
JP2007088209A (ja) * 2005-09-22 2007-04-05 Fujifilm Corp 貴金属用研磨液、及び、化学的機械的研磨方法
US7265055B2 (en) * 2005-10-26 2007-09-04 Cabot Microelectronics Corporation CMP of copper/ruthenium substrates
US7585340B2 (en) * 2006-04-27 2009-09-08 Cabot Microelectronics Corporation Polishing composition containing polyether amine
US7368066B2 (en) * 2006-05-31 2008-05-06 Cabot Microelectronics Corporation Gold CMP composition and method
US7776230B2 (en) 2006-08-30 2010-08-17 Cabot Microelectronics Corporation CMP system utilizing halogen adduct
US20080148649A1 (en) * 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry
TWI611047B (zh) * 2006-12-21 2018-01-11 恩特葛瑞斯股份有限公司 用以移除蝕刻後殘餘物之液體清洗劑
US8008202B2 (en) * 2007-08-01 2011-08-30 Cabot Microelectronics Corporation Ruthenium CMP compositions and methods
CN103045099B (zh) * 2007-09-14 2015-03-25 安集微电子（上海）有限公司 用于抛光多晶硅的化学机械抛光液
CN102113096A (zh) * 2008-08-06 2011-06-29 日立化成工业株式会社 化学机械研磨用研磨液以及使用了该研磨液的基板的研磨方法
US20100096584A1 (en) * 2008-10-22 2010-04-22 Fujimi Corporation Polishing Composition and Polishing Method Using the Same
CN102414293B (zh) * 2009-04-22 2014-02-19 株式会社Lg化学 化学机械抛光用浆料
KR101380098B1 (ko) * 2009-07-16 2014-04-01 히타치가세이가부시끼가이샤 팔라듐 연마용 ｃｍｐ 연마액 및 연마 방법
US9799532B2 (en) * 2010-02-15 2017-10-24 Hitachi Chemical Company, Ltd. CMP polishing solution and polishing method
CN102337079B (zh) * 2010-07-23 2015-04-15 安集微电子（上海）有限公司 一种化学机械抛光液
CN104194648B (zh) * 2014-09-10 2016-07-06 句容金猴机械研究所有限公司 一种机械设备不锈钢材料抛光剂及其制备方法
CN104650740B (zh) * 2014-12-10 2017-07-14 深圳市力合材料有限公司 一种可实现快速稳定抛光的抛光液
US11279850B2 (en) * 2018-03-28 2022-03-22 Fujifilm Electronic Materials U.S.A., Inc. Bulk ruthenium chemical mechanical polishing composition
KR20200032601A (ko) * 2018-09-18 2020-03-26 주식회사 케이씨텍 연마용 슬러리 조성물
US10876020B2 (en) * 2018-11-15 2020-12-29 Soulbrain Co., Ltd. Polishing additive composition, polishing slurry composition and method for polishing insulating film of semiconductor element
US20200172761A1 (en) * 2018-12-04 2020-06-04 Cabot Microelectronics Corporation Composition and method for silicon nitride cmp

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2687712A (en) * 1951-08-14 1954-08-31 Boeing Co Antechamber type spark plug mechanism
US5391258A (en) 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
JPH10340871A (ja) * 1997-06-06 1998-12-22 Toshiba Corp 研磨方法及び半導体装置の製造方法
US6143192A (en) 1998-09-03 2000-11-07 Micron Technology, Inc. Ruthenium and ruthenium dioxide removal method and material
US6395194B1 (en) 1998-12-18 2002-05-28 Intersurface Dynamics Inc. Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same
US6290736B1 (en) 1999-02-09 2001-09-18 Sharp Laboratories Of America, Inc. Chemically active slurry for the polishing of noble metals and method for same
DE19927286B4 (de) 1999-06-15 2011-07-28 Qimonda AG, 81739 Verwendung einer Schleiflösung zum chemisch-mechanischen Polieren einer Edelmetall-Oberfläche
IL147235A0 (en) * 1999-08-13 2002-08-14 Cabot Microelectronics Corp Chemical mechanical polishing systems and methods for their use
JP4188598B2 (ja) * 1999-08-13 2008-11-26 キャボット マイクロエレクトロニクス コーポレイション 停止化合物を伴う研磨系及びその使用方法
TW490756B (en) 1999-08-31 2002-06-11 Hitachi Ltd Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components
US6332831B1 (en) 2000-04-06 2001-12-25 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
DE10024874A1 (de) * 2000-05-16 2001-11-29 Siemens Ag Polierflüssigkeit und Verfahren zur Strukturierung von Metallen und Metalloxiden
US6524168B2 (en) 2000-06-15 2003-02-25 Rodel Holdings, Inc Composition and method for polishing semiconductors
US6589100B2 (en) * 2001-09-24 2003-07-08 Cabot Microelectronics Corporation Rare earth salt/oxidizer-based CMP method
US6884723B2 (en) 2001-12-21 2005-04-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using complexing agents
US7004819B2 (en) * 2002-01-18 2006-02-28 Cabot Microelectronics Corporation CMP systems and methods utilizing amine-containing polymers
US6527622B1 (en) * 2002-01-22 2003-03-04 Cabot Microelectronics Corporation CMP method for noble metals
US7524346B2 (en) * 2002-01-25 2009-04-28 Dupont Air Products Nanomaterials Llc Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates
US6803353B2 (en) * 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents

Also Published As

Publication number Publication date
CN1813038A (zh) 2006-08-02
EP1639053B1 (en) 2017-01-04
KR101117439B1 (ko) 2012-02-29
US20040266196A1 (en) 2004-12-30
US7160807B2 (en) 2007-01-09
JP2007526626A (ja) 2007-09-13
WO2005005561A1 (en) 2005-01-20
EP1639053A1 (en) 2006-03-29
TW200524995A (en) 2005-08-01
KR20060030061A (ko) 2006-04-07

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees