TWI305296B - Systems and methods for reducing the influence of plasma-generated debris on the internal components of an euv light source - Google Patents

Systems and methods for reducing the influence of plasma-generated debris on the internal components of an euv light source Download PDF

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Publication number
TWI305296B
TWI305296B TW94123365A TW94123365A TWI305296B TW I305296 B TWI305296 B TW I305296B TW 94123365 A TW94123365 A TW 94123365A TW 94123365 A TW94123365 A TW 94123365A TW I305296 B TWI305296 B TW I305296B
Authority
TW
Taiwan
Prior art keywords
plasma
heater
debris
euv
mirror
Prior art date
Application number
TW94123365A
Other languages
English (en)
Chinese (zh)
Other versions
TW200612208A (en
Inventor
Alexander I Ershov
William F Marx
Norbert R Bowering
Bjorn A M Hansson
Oleh Khodykin
Igor V Fomenkov
William N Partlo
Original Assignee
Cymer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/900,839 external-priority patent/US7164144B2/en
Priority claimed from US10/979,945 external-priority patent/US8075732B2/en
Priority claimed from US11/174,442 external-priority patent/US7196342B2/en
Application filed by Cymer Inc filed Critical Cymer Inc
Publication of TW200612208A publication Critical patent/TW200612208A/zh
Application granted granted Critical
Publication of TWI305296B publication Critical patent/TWI305296B/zh

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G01N21/15—Preventing contamination of the components of the optical system or obstruction of the light path
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Nanotechnology (AREA)
  • General Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
TW94123365A 2004-07-27 2005-07-11 Systems and methods for reducing the influence of plasma-generated debris on the internal components of an euv light source TWI305296B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/900,839 US7164144B2 (en) 2004-03-10 2004-07-27 EUV light source
US10/979,945 US8075732B2 (en) 2004-11-01 2004-11-01 EUV collector debris management
US11/174,442 US7196342B2 (en) 2004-03-10 2005-06-29 Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source

Publications (2)

Publication Number Publication Date
TW200612208A TW200612208A (en) 2006-04-16
TWI305296B true TWI305296B (en) 2009-01-11

Family

ID=36315387

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94123365A TWI305296B (en) 2004-07-27 2005-07-11 Systems and methods for reducing the influence of plasma-generated debris on the internal components of an euv light source

Country Status (2)

Country Link
JP (1) JP4689672B2 (ja)
TW (1) TWI305296B (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7193229B2 (en) * 2004-12-28 2007-03-20 Asml Netherlands B.V. Lithographic apparatus, illumination system and method for mitigating debris particles
US7541603B2 (en) * 2006-09-27 2009-06-02 Asml Netherlands B.V. Radiation system and lithographic apparatus comprising the same
JP5277496B2 (ja) * 2007-04-27 2013-08-28 ギガフォトン株式会社 極端紫外光源装置および極端紫外光源装置の光学素子汚染防止装置
NL2003405A (en) * 2008-09-29 2010-03-30 Asml Netherlands Bv System for contactless cleaning, lithographic apparatus and device manufacturing method.
US9539622B2 (en) * 2014-03-18 2017-01-10 Asml Netherlands B.V. Apparatus for and method of active cleaning of EUV optic with RF plasma field
KR102465328B1 (ko) * 2015-08-28 2022-11-10 삼성전자주식회사 극자외선 발생 장치 및 노광 장치
JP6556254B2 (ja) 2015-11-25 2019-08-07 ギガフォトン株式会社 極端紫外光生成装置
US10128017B1 (en) * 2017-05-12 2018-11-13 Asml Netherlands B.V. Apparatus for and method of controlling debris in an EUV light source
WO2018229838A1 (ja) 2017-06-12 2018-12-20 ギガフォトン株式会社 極端紫外光センサユニット及び極端紫外光生成装置
US10495987B2 (en) * 2017-09-28 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Radiation source apparatus, EUV lithography system, and method for decreasing debris in EUV lithography system
US10824083B2 (en) 2017-09-28 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Light source, EUV lithography system, and method for generating EUV radiation
DE102021106289A1 (de) * 2020-05-07 2021-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. System und verfahren zum ausführen von extrem-ultraviolett-photolithografieprozessen
CN114485279B (zh) * 2020-10-26 2023-03-07 北京大学 一种用于重频激光打靶的溅射屏蔽系统及方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6566667B1 (en) * 1997-05-12 2003-05-20 Cymer, Inc. Plasma focus light source with improved pulse power system
AU3957599A (en) * 1998-05-29 1999-12-20 Nikon Corporation Laser-excited plasma light source, exposure apparatus and its manufacturing method, and device manufacturing method
JP2001326096A (ja) * 2000-05-16 2001-11-22 Nikon Corp プラズマフォーカス光源、照明装置及びこれらを用いたｘ線露光装置及び半導体デバイスの製造方法
FR2823949A1 (fr) * 2001-04-18 2002-10-25 Commissariat Energie Atomique Procede et dispositif de generation de lumiere dans l'extreme ultraviolet notamment pour la lithographie

Also Published As

Publication number Publication date
JP2008508722A (ja) 2008-03-21
TW200612208A (en) 2006-04-16
JP4689672B2 (ja) 2011-05-25

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