TWI302170B - Substrate electroless plating apparatus and method - Google Patents

Substrate electroless plating apparatus and method Download PDF

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Publication number
TWI302170B
TWI302170B TW091132642A TW91132642A TWI302170B TW I302170 B TWI302170 B TW I302170B TW 091132642 A TW091132642 A TW 091132642A TW 91132642 A TW91132642 A TW 91132642A TW I302170 B TWI302170 B TW I302170B
Authority
TW
Taiwan
Prior art keywords
substrate
plating
semiconductor substrate
rti
substrates
Prior art date
Application number
TW091132642A
Other languages
English (en)
Chinese (zh)
Other versions
TW200300179A (en
Inventor
Wang Xinming
Abe Kenichi
Mishima Koji
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of TW200300179A publication Critical patent/TW200300179A/zh
Application granted granted Critical
Publication of TWI302170B publication Critical patent/TWI302170B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C23C18/1628—Specific elements or parts of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76874—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
    • H10P14/46—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW091132642A 2001-11-07 2002-11-06 Substrate electroless plating apparatus and method TWI302170B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001341889A JP3960774B2 (ja) 2001-11-07 2001-11-07 無電解めっき装置及び方法

Publications (2)

Publication Number Publication Date
TW200300179A TW200300179A (en) 2003-05-16
TWI302170B true TWI302170B (en) 2008-10-21

Family

ID=19155840

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091132642A TWI302170B (en) 2001-11-07 2002-11-06 Substrate electroless plating apparatus and method

Country Status (4)

Country Link
US (1) US7141274B2 (OSRAM)
JP (1) JP3960774B2 (OSRAM)
TW (1) TWI302170B (OSRAM)
WO (1) WO2003040430A1 (OSRAM)

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US20050048768A1 (en) * 2003-08-26 2005-03-03 Hiroaki Inoue Apparatus and method for forming interconnects
US7874260B2 (en) * 2006-10-25 2011-01-25 Lam Research Corporation Apparatus and method for substrate electroless plating
US7829152B2 (en) * 2006-10-05 2010-11-09 Lam Research Corporation Electroless plating method and apparatus
JP4519037B2 (ja) * 2005-08-31 2010-08-04 東京エレクトロン株式会社 加熱装置及び塗布、現像装置
US20090078580A1 (en) * 2005-12-02 2009-03-26 Ulvac, Inc. Method for Forming Cu Film
US20070227901A1 (en) * 2006-03-30 2007-10-04 Applied Materials, Inc. Temperature control for ECMP process
US8474468B2 (en) * 2006-09-30 2013-07-02 Tokyo Electron Limited Apparatus and method for thermally processing a substrate with a heated liquid
US9383138B2 (en) * 2007-03-30 2016-07-05 Tokyo Electron Limited Methods and heat treatment apparatus for uniformly heating a substrate during a bake process
US20080241400A1 (en) * 2007-03-31 2008-10-02 Tokyo Electron Limited Vacuum assist method and system for reducing intermixing of lithography layers
US20090077825A1 (en) * 2007-07-17 2009-03-26 Semiconductor Analytical Services, Inc. (Sas Inc.) Apparatus and method for cleaning and drying solid objects
US8596336B2 (en) * 2008-06-03 2013-12-03 Applied Materials, Inc. Substrate support temperature control
KR101170765B1 (ko) * 2009-02-11 2012-08-03 세메스 주식회사 기판 도금 장치 및 방법
JP5339235B2 (ja) * 2010-01-12 2013-11-13 Ｃｋテクニック株式会社 小部品の無電解メッキ方法及び無電解メッキ装置
CN101922002A (zh) * 2010-04-12 2010-12-22 南京航空航天大学 化学复合镀槽
AT510593B1 (de) * 2010-12-15 2012-05-15 Markus Dipl Ing Dr Hacksteiner Vorrichtung zum metallisieren von wafern
US9449862B2 (en) 2011-06-03 2016-09-20 Tel Nexx, Inc. Parallel single substrate processing system
US8518748B1 (en) 2011-06-29 2013-08-27 Western Digital (Fremont), Llc Method and system for providing a laser submount for an energy assisted magnetic recording head
US8288204B1 (en) * 2011-08-30 2012-10-16 Western Digital (Fremont), Llc Methods for fabricating components with precise dimension control
TWI485286B (zh) * 2011-11-16 2015-05-21 荏原製作所股份有限公司 Electroless plating and electroless plating
US9909789B2 (en) * 2012-01-10 2018-03-06 Spring (U.S.A.) Corporation Heating and cooling unit with canopy light
US8850829B2 (en) * 2012-01-10 2014-10-07 Spring (U.S.A.) Corporation Heating and cooling unit with semiconductor device and heat pipe
US9153449B2 (en) * 2012-03-19 2015-10-06 Lam Research Corporation Electroless gap fill
JP6507433B2 (ja) * 2015-06-19 2019-05-08 株式会社ジェイ・イー・ティ 基板処理装置
USD811802S1 (en) 2016-07-15 2018-03-06 Spring (U.S.A.) Corporation Food server
CN106958036B (zh) * 2017-05-09 2018-12-04 李燕 一种电镀用电镀液加热装置
US10772212B1 (en) * 2019-12-13 2020-09-08 U-Pro Machines Co., Ltd. Electrochemical or chemical treatment device for high aspect ratio circuit board with through hole
JP7541457B2 (ja) * 2020-09-18 2024-08-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR102435955B1 (ko) * 2020-10-08 2022-08-24 한국생산기술연구원 인쇄회로기판의 무전해 도금방법
CN112481674B (zh) * 2020-11-12 2022-02-22 天长市京发铝业有限公司 一种铝板阳极氧化装置
US20250038013A1 (en) * 2023-07-27 2025-01-30 Yield Engineering Systems, Inc. Dual channel flow plate for wet processing
CN116924823B (zh) * 2023-09-15 2023-12-12 江苏固家智能科技有限公司 陶瓷基板与铜箔无尘复合仓

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2902728B2 (ja) 1990-05-29 1999-06-07 新光電気工業株式会社 片面めっき方法
US6042712A (en) * 1995-05-26 2000-03-28 Formfactor, Inc. Apparatus for controlling plating over a face of a substrate
JP3490207B2 (ja) 1996-03-04 2004-01-26 松下電器産業株式会社 カセットおよび半導体装置の製造装置
JP3415005B2 (ja) 1997-09-08 2003-06-09 株式会社荏原製作所 めっき装置

Also Published As

Publication number Publication date
US20040231997A1 (en) 2004-11-25
WO2003040430A1 (en) 2003-05-15
JP3960774B2 (ja) 2007-08-15
TW200300179A (en) 2003-05-16
JP2003147538A (ja) 2003-05-21
US7141274B2 (en) 2006-11-28

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