TWI292927B - Adjustable implantation angle workpiece support structure for an ion beam implanter - Google Patents
Adjustable implantation angle workpiece support structure for an ion beam implanter Download PDFInfo
- Publication number
- TWI292927B TWI292927B TW092118690A TW92118690A TWI292927B TW I292927 B TWI292927 B TW I292927B TW 092118690 A TW092118690 A TW 092118690A TW 92118690 A TW92118690 A TW 92118690A TW I292927 B TWI292927 B TW I292927B
- Authority
- TW
- Taiwan
- Prior art keywords
- workpiece
- ion beam
- chamber
- rotating member
- implant
- Prior art date
Links
- 238000010884 ion-beam technique Methods 0.000 title claims description 97
- 238000002513 implantation Methods 0.000 title claims description 24
- 239000007943 implant Substances 0.000 claims description 53
- 150000002500 ions Chemical class 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 4
- 230000003116 impacting effect Effects 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims 5
- 230000003068 static effect Effects 0.000 claims 2
- 238000004891 communication Methods 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 239000010977 jade Substances 0.000 claims 1
- 238000010408 sweeping Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20207—Tilt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20221—Translation
- H01J2237/20235—Z movement or adjustment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/192,344 US6710360B2 (en) | 2002-07-10 | 2002-07-10 | Adjustable implantation angle workpiece support structure for an ion beam implanter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200405442A TW200405442A (en) | 2004-04-01 |
| TWI292927B true TWI292927B (en) | 2008-01-21 |
Family
ID=30114329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092118690A TWI292927B (en) | 2002-07-10 | 2003-07-09 | Adjustable implantation angle workpiece support structure for an ion beam implanter |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6710360B2 (enExample) |
| EP (1) | EP1520287A1 (enExample) |
| JP (1) | JP4320471B2 (enExample) |
| CN (1) | CN100468605C (enExample) |
| AU (1) | AU2003248915A1 (enExample) |
| TW (1) | TWI292927B (enExample) |
| WO (1) | WO2004006283A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4061044B2 (ja) * | 2001-10-05 | 2008-03-12 | 住友重機械工業株式会社 | 基板移動装置 |
| US6774373B2 (en) * | 2002-07-29 | 2004-08-10 | Axcelis Technologies, Inc. | Adjustable implantation angle workpiece support structure for an ion beam implanter |
| US6900444B2 (en) * | 2002-07-29 | 2005-05-31 | Axcelis Technologies, Inc. | Adjustable implantation angle workpiece support structure for an ion beam implanter |
| US6740894B1 (en) * | 2003-02-21 | 2004-05-25 | Axcelis Technologies, Inc. | Adjustable implantation angle workpiece support structure for an ion beam implanter utilizing a linear scan motor |
| US20070063147A1 (en) * | 2004-06-14 | 2007-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Doping device |
| US7745293B2 (en) * | 2004-06-14 | 2010-06-29 | Semiconductor Energy Laboratory Co., Ltd | Method for manufacturing a thin film transistor including forming impurity regions by diagonal doping |
| US6992309B1 (en) | 2004-08-13 | 2006-01-31 | Axcelis Technologies, Inc. | Ion beam measurement systems and methods for ion implant dose and uniformity control |
| US6992310B1 (en) | 2004-08-13 | 2006-01-31 | Axcelis Technologies, Inc. | Scanning systems and methods for providing ions from an ion beam to a workpiece |
| US7276712B2 (en) * | 2005-07-01 | 2007-10-02 | Axcelis Technologies, Inc. | Method and apparatus for scanning a workpiece in a vacuum chamber of an ion beam implanter |
| DE102006027820B4 (de) * | 2006-06-16 | 2008-04-03 | All Welding Technologies Ag | Kammeranordnung zur Verwendung bei der Elektronenstrahlbearbeitung |
| US9611540B2 (en) * | 2008-12-22 | 2017-04-04 | Axcelis Technologies, Inc. | Electrostatic chuck shielding mechanism |
| CN103928282B (zh) * | 2014-05-06 | 2016-03-16 | 武汉大学 | 一种离子注入样品台 |
| JP6292310B2 (ja) * | 2014-09-25 | 2018-03-14 | 三菱電機株式会社 | イオン注入装置 |
| US20160111254A1 (en) * | 2014-10-16 | 2016-04-21 | Varian Semiconductor Equipment Associates, Inc. | Workpiece Processing Method And Apparatus |
| US10325752B1 (en) * | 2018-03-27 | 2019-06-18 | Varian Semiconductor Equipment Associates, Inc. | Performance extraction set |
| CN111398404B (zh) * | 2020-05-15 | 2025-06-03 | 浙江师范大学 | 碰撞角度及探测角度均可独立调谐的交叉分子束实验装置 |
| CN118919385B (zh) * | 2024-07-16 | 2025-10-03 | 颀中科技(苏州)有限公司 | 载具 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4761559A (en) | 1986-09-24 | 1988-08-02 | Eaton Corporation | Ion beam implantation display method and apparatus |
| US4975586A (en) * | 1989-02-28 | 1990-12-04 | Eaton Corporation | Ion implanter end station |
| US5229615A (en) | 1992-03-05 | 1993-07-20 | Eaton Corporation | End station for a parallel beam ion implanter |
| US5444597A (en) | 1993-01-15 | 1995-08-22 | Blake; Julian G. | Wafer release method and apparatus |
| US5436790A (en) | 1993-01-15 | 1995-07-25 | Eaton Corporation | Wafer sensing and clamping monitor |
| US5898179A (en) * | 1997-09-10 | 1999-04-27 | Orion Equipment, Inc. | Method and apparatus for controlling a workpiece in a vacuum chamber |
| US6222196B1 (en) * | 1998-11-19 | 2001-04-24 | Axcelis Technologies, Inc. | Rotatable workpiece support including cyclindrical workpiece support surfaces for an ion beam implanter |
| US6065499A (en) * | 1998-12-21 | 2000-05-23 | Eaton Corporation | Lateral stress relief mechanism for vacuum bellows |
| GB2349269A (en) * | 1999-04-19 | 2000-10-25 | Applied Materials Inc | Ion implanter |
| US6207959B1 (en) | 1999-04-19 | 2001-03-27 | Applied Materials, Inc. | Ion implanter |
| KR100298587B1 (ko) * | 1999-11-22 | 2001-11-05 | 윤종용 | 이온 주입 장치 |
| US6677599B2 (en) * | 2000-03-27 | 2004-01-13 | Applied Materials, Inc. | System and method for uniformly implanting a wafer with an ion beam |
| GB2386469B (en) * | 2001-11-14 | 2006-05-17 | Varian Semiconductor Equipment | Scan methods and apparatus for ion implantation |
-
2002
- 2002-07-10 US US10/192,344 patent/US6710360B2/en not_active Expired - Lifetime
-
2003
- 2003-07-09 TW TW092118690A patent/TWI292927B/zh active
- 2003-07-10 CN CNB038163098A patent/CN100468605C/zh not_active Expired - Fee Related
- 2003-07-10 AU AU2003248915A patent/AU2003248915A1/en not_active Abandoned
- 2003-07-10 WO PCT/US2003/021527 patent/WO2004006283A1/en not_active Ceased
- 2003-07-10 EP EP03763426A patent/EP1520287A1/en not_active Withdrawn
- 2003-07-10 JP JP2004520092A patent/JP4320471B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1669107A (zh) | 2005-09-14 |
| US20040007678A1 (en) | 2004-01-15 |
| WO2004006283A1 (en) | 2004-01-15 |
| AU2003248915A1 (en) | 2004-01-23 |
| EP1520287A1 (en) | 2005-04-06 |
| US6710360B2 (en) | 2004-03-23 |
| JP2005533340A (ja) | 2005-11-04 |
| TW200405442A (en) | 2004-04-01 |
| CN100468605C (zh) | 2009-03-11 |
| JP4320471B2 (ja) | 2009-08-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI292927B (en) | Adjustable implantation angle workpiece support structure for an ion beam implanter | |
| JP5652583B2 (ja) | ハイブリッド結合及び二重機械式走査構造を有するイオン注入システム及び方法 | |
| TWI442441B (zh) | 離子植入系統以及在離子植入系統中將離子植入至工作件之中的方法 | |
| TWI314337B (en) | A magnetic deflector for a ribbon-shaped beam or a scanned pencil-shaped beam ,a system of an ion implantation and a hybrid deflector for ion implantation,and a method of deflecting an ion beam prior to implantation into a workpiece in order to reduce | |
| KR100845635B1 (ko) | 이온 주입용 하이브리드 주사 시스템 및 방법 | |
| JP5467430B2 (ja) | イオン注入機に用いる装置及びイオン注入を実行する方法 | |
| WO2002019374A3 (en) | Methods and apparatus for adjusting beam parallelism in ion implanters | |
| CN101061563B (zh) | 经改进的扫描离子注入期间的离子束利用 | |
| TWI413165B (zh) | 離子植入束角度校準 | |
| TWI395251B (zh) | 帶狀離子束植入機系統、架構及離子植入工件之方法 | |
| KR20130124130A (ko) | 이온 주입 공정 및 장치를 위한 이온 빔 크기 제어 및 진보된 공정 제어 | |
| CN101151700B (zh) | 测量射束角的方法 | |
| TWI455170B (zh) | 用於離子佈植之束角測量的方法與設備 | |
| KR20110039290A (ko) | 광폭 빔 균일성 제어 시스템 및 방법 | |
| CN106233418B (zh) | 使用角能量过滤器的角扫描 | |
| US7772571B2 (en) | Implant beam utilization in an ion implanter | |
| TW200419621A (en) | Adjustable implantation angle workpiece support structure for an ion beam implanter | |
| JP5263601B2 (ja) | イオン注入を補助する装置、イオン注入システム、及びイオンビームと加工物との相対的方位を確定するための方法 | |
| TWI411000B (zh) | 離子佈植方法及其應用 | |
| JP2007095693A (ja) | イオンビームプロファイラー | |
| TW202433051A (zh) | 使用聚焦離子束及創新掃描策略創造光滑對角表面的方法 | |
| JPH02260361A (ja) | イオン注入装置 | |
| Splinter et al. | Optima HD: single wafer mechanical scan ion implanter | |
| TW202524534A (zh) | 處理系統及確定離子束的入射角的方法 | |
| KR950030218A (ko) | 불순물 농도분포의 개선을 위한 이온주입방법 |