TWI288239B - Peak voltage detector having lower current consumption - Google Patents

Peak voltage detector having lower current consumption Download PDF

Info

Publication number
TWI288239B
TWI288239B TW94140507A TW94140507A TWI288239B TW I288239 B TWI288239 B TW I288239B TW 94140507 A TW94140507 A TW 94140507A TW 94140507 A TW94140507 A TW 94140507A TW I288239 B TWI288239 B TW I288239B
Authority
TW
Taiwan
Prior art keywords
transistor
voltage
drain
current
source
Prior art date
Application number
TW94140507A
Other languages
Chinese (zh)
Other versions
TW200720669A (en
Inventor
Ming-Chuen Shiau
Hung-Kai Jang
Original Assignee
Hsiuping Inst Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hsiuping Inst Technology filed Critical Hsiuping Inst Technology
Priority to TW94140507A priority Critical patent/TWI288239B/en
Publication of TW200720669A publication Critical patent/TW200720669A/en
Application granted granted Critical
Publication of TWI288239B publication Critical patent/TWI288239B/en

Links

Landscapes

  • Measurement Of Current Or Voltage (AREA)

Abstract

A peak voltage detector having lower current consumption includes a differential amplifier (1), a current mirror (2) and a capacitor (C). Among them, the differential amplifier serves as a comparator, receiving both the input signal V (IN) and the output feedback signal V (OUT), and the current mirror supplies the capacitor with needed charge current. The different amplifier consists of the first PMOS transistor (MP1), the second PMOS transistor (MP2), the first NMOS transistor (MN1), the second NMOS transistor (MN2) and the third NMOS transistor (MN3). Within which, the NMOS transistors MN1 and MN2 work as drivers while the PMOS transistor MP 1 acts as the load transistor, and the NMOS transistor MN3 configured as a diode form provides a reference current to the differential amplifier. The peak voltage detector can both accurately measure the peak voltage of input signal and efficiently lessen the power dissipation.

Description

1288239 九、發明說明: 【發明所屬之技術領域】 本發明係有關一種電壓峰值檢知器,尤指利用一差動放大叩一 + 士 鏡、-控制電晶體、以及-電容器所組成以求獲得 ^二= 功率消耗之互献金氧半(CMOS)奸·。 $ 4值且具有低 【先前技術】 ▲電壓峰值檢知器係-種電子電路,能_得—電壓波形之最大值1288239 IX. Description of the Invention: [Technical Field] The present invention relates to a voltage peak detector, in particular to a differential amplifier, a control transistor, and a capacitor. ^ 二 = Power consumption of mutual contribution of gold and oxygen (CMOS). $4 value and low [Prior Art] ▲ Voltage peak detector system - a kind of electronic circuit, can get the maximum value of the voltage waveform

1,該電路之輸人為-變動之電壓信號,而其輸_是該輸人電壓波形 之最大值。 在許多應用中,輸入電壓信號之峰值必馳測出,然後將之以直流電 型態保留仙便_分析、制。—佩_之尖峰值常比它的平均值要 更有用’例如當執行破壞性測試時,就有必要追尋出並保持峰值信號,而 ,測電壓錢树輸較上之衰缝、難絲_細(鳩_贈)、 最大近似解碼系統(臟imum likelihood decoding system)以及用以檢測核韓 射之脈衝信號檢測電路等也需要用到電壓峰值檢知器。 u先前技藝(_* art)中,電壓峰值檢知器之最簡單作法係令輸入電壓信 號通過二極體,而對電容充電,以便取得該輸入電壓波形之峰值。 、如第一圖所示,當輸入電壓V(IN)大於電容器C之電壓時,二極體〇導 通,遂行充電作用,直到輸入電壓V(IN)到達其最大值,電容器c不能 再繼續充電,此時輸出電壓V(0UT)即表示輸入電壓V(IN)之峰值。 a由於輸出端與輸入端之間存在二極體D,此電路無法精確地檢得輸入電 壓V(IN)之真正峰值。換言之,輸出電壓ν(〇υτ)與輸入電壓V(IN)之峰值之 間永遠存在二極體導通電壓vd之誤差。亦即, MAX(V(〇UT))=MAX(V(IN))-Vd,如第二圖所示(該圖係〇《他 暫態分析模擬結果)。 、對於許多應用而言,上述二極體導通電壓vd之誤差係不欲見到的, 並且该電壓差會因為使用不同之二極體而有所差異,可能導致不良之影響 或不可預測之後果。 5 1288239 ‘ 為了能夠精確地檢測輸入之峰值電壓,另一種 了由二個運算放大器OP1和⑽、二個 刖技》係使用 ^以及―個電容器c來構成-電厂鱗值和 PSpice之暫態分析模擬結果,如第四圖所示。其中,t圖曰所— 不’其:〇rCAD 波整流器,當輸人電壓V(IN)大於電容 疋她確的半 電容犯進行充電,最㈣容傳送偏麟 ,峰值_器能《地檢測鱗值靈,但其電路結; 片面積大,貫不利於積體電路之要求。 ’、 勺曰曰 迄今,有許多電壓峰值檢知器之技術被 腦_9、5502746、55養7、5%9545、6〇5i998、j ^ 以及中華民國專利案公告案號第476418料減 θ σ 472861號 精確地檢測輸入信號之峰值電塵於’该寺技術均能 失·此ί 存在有電路結構複雜、佔用的晶片面積大等缺 最近’她崎輸㈣細==衍 Ϊ) 517161 ί t ^«1 ^ 1 78 ^ 1223079 ^ 1223080 ^ ^3〇δ! 號中所揭路者即疋’轉技術係由本中請人提出,其細 -電流鏡顺成的·來取代運算放Α||,由於料 = '佔用的^面積小以及有利於裝置等 ΐΐ;!;,;:: Α土密電壓療值檢知器之功率消耗,本申請人曾提出中華民國 …、、7_ 5虎「具低功率消耗之電麼峰值檢知器」專利案,主要 1288239 用第3所不’其係藉由連接在輸入信號V(IN)以及作為一電流源且 用以M、-電流給差動放大器丨使用之则電晶體之間極間•制帝曰雕 之:之電壓位準,而動態控制該作為-電流二 哭,明之主要目的係提出-種新穎架構之電麵值檢知 控制電晶體’並且能精確且快速地檢測出輸入仲 之峰值電壓,同日村較先叙電卿錄知轉妓低之辨消=u 【發明内容】 本發明提出-種具低功率消耗的電壓峰值檢知器,其係由一差動放大哭 、以及一電容器c所組成,其中,該差動放大器1係做^ ’,、兩輸入端係分別接受輸入信號V(IN)及檢知器之輸出電壓回授 U虎ν(ουτ) ’並提供適當之充電電流給電流鏡2,以便取得輸入信號v⑽) 2值做為輸出電壓信號,而該電流鏡2係作為充電器使用,用以提供電 谷為匸所需之充電電流,該差動放大器i係由第一 pM〇s電晶體刪、第 一 PMOf電晶體MP2、第-NM〇s電晶體^^、第二觀〇3電晶體讀二 以,第二NMOS電晶體MN3所組成,其中,該第一應〇8電晶體應丄 彳弟一 NMOS黾曰曰體MN2係做為驅動器(driver)使用,該第一 pM〇§電晶 體MP1和第一 PMOS電晶體MP2係做為主動負載(active load)使用,而第 三NMOS電晶體MN3貝丨】作為一電流源使用且設計成二極體形式,以便提 供-電流給该差動放大器1使用。本發明所提出之電壓峰值檢知器,不但 能精確地檢測出輸人信號之雜龍,並且也能有效地減少功率消耗。 【實施方式】 根據上达之目的,本發明提出一種具低功率消耗之電壓峰值檢知器, 如第七圖所示’其係由一差動放大器丨、一電流鏡2、以及一電容器〇所組成。 該差動放大器1係由第一PMOS電晶體MP1、第二PMOS電晶體MP2、第一 NMOS電晶體MN1、第二NM〇s電晶體mn2以及第三_〇8電晶體_3所 1288239 , 組成,其中,該第一NMOS電晶體MN1和第二丽〇8電晶體贿2係做為驅 • 動器(driver)使用,該第一PMOS電晶體MP1和第二PMOS電晶體MP2係做為 主動負載(active load)使用,而第三NMOS電晶體MN3則作為一電流源使用 _ 且設計成二極體形式,以便提供一電流給該差動放大器1使用。 • 該第一NMOS電晶體MN1和第二NMOS電晶體MN2之閘極(gate)係分別 接受輸入信號V(IN)及檢知器之輸出電壓回授信號¥(〇111),源極(3〇ι^)連 接在一起,並連接至第三NMOS電晶體MN3之汲極(drain),而其汲極則分別 與第一PMOS電晶體MP1和第二PMOS電晶體MP2之汲極相連接;該第二 NMOS電晶體MN3之閘極與沒極連接在一起以形成一二極體,而源:則= φ 地;該第—PM0S電晶體礎1和第二PMOS電晶體MP2之源極均連接至電源 電壓vdd,而.則連接在一起,且該第:PM0S電晶體之間極與沒極 係連接在一起’以形成一電流鏡組態。1. The input of the circuit is a variable-varying voltage signal, and its input_ is the maximum value of the input voltage waveform. In many applications, the peak value of the input voltage signal is measured and then stored in a DC mode. The tip of the _ _ _ peak is often more useful than its average value ' For example, when performing destructive testing, it is necessary to trace and maintain the peak signal, and the voltage of the tree is more difficult to slash, difficult to _ A voltage peak detector is also required for fine (鸠_赠), maximum approximate decoding system (dirty imum likelihood decoding system), and pulse signal detection circuit for detecting nuclear shot. In the prior art (_* art), the simplest method of the voltage peak detector is to pass the input voltage signal through the diode and charge the capacitor to obtain the peak value of the input voltage waveform. As shown in the first figure, when the input voltage V(IN) is greater than the voltage of the capacitor C, the diode 〇 turns on and performs charging until the input voltage V(IN) reaches its maximum value, and the capacitor c can no longer continue charging. At this time, the output voltage V(0UT) represents the peak value of the input voltage V(IN). a Due to the presence of diode D between the output and the input, this circuit cannot accurately detect the true peak value of the input voltage V(IN). In other words, there is always an error in the diode turn-on voltage vd between the output voltage ν(〇υτ) and the peak value of the input voltage V(IN). That is, MAX(V(〇UT))=MAX(V(IN))-Vd, as shown in the second figure (the figure is “the result of his transient analysis simulation”). For many applications, the error of the above-mentioned diode turn-on voltage vd is undesired, and the voltage difference may vary due to the use of different diodes, which may cause adverse effects or unpredictable consequences. . 5 1288239 'In order to accurately detect the peak voltage of the input, the other is composed of two operational amplifiers OP1 and (10), two techniques, and a capacitor c. - Power plant scale and PSpice transient Analyze the simulation results as shown in the fourth figure. Among them, t map — - not 'its: 〇 rCAD wave rectifier, when the input voltage V (IN) is greater than the capacitance 疋 her true half capacitance is charged, the most (four) capacity transmission unicorn, peak _ can "detect Scale value, but its circuit junction; large area, is not conducive to the requirements of integrated circuits. ', Spoon 曰曰 so far, there are many voltage peak detector technology by the brain _9, 5502746, 55 raise 7, 5% 9545, 6 〇 5i998, j ^ and the Republic of China patent case number 476418 minus θ σ 472861 accurately detects the peak value of the input signal in the 'the temple technology can lose this ί there is a circuit structure is complex, occupying a large area of the wafer, etc. recently 'here lost (four) fine == Yan Yan) 517161 ί t ^«1 ^ 1 78 ^ 1223079 ^ 1223080 ^ ^3〇δ! The road revealed by the 疋 疋 'transfer technology is proposed by the applicant, the fine-current mirror shun into the replacement of the operation Α | |, because of the material = 'occupied ^ area is small and is conducive to the device, etc.;!;,;:: The power consumption of the earth-density voltage therapy detector, the applicant has proposed the Republic of China ...,, 7_ 5 tiger "Phase detection device with low power consumption", the main case of 1288239 is used to connect to the input signal V(IN) and as a current source for the M, - current difference. The use of the dynamic amplifier 丨 between the transistors between the poles of the emperor: the voltage level, and dynamic control For the current - the second cry, the main purpose of the Ming is to propose a novel structure of the electrical surface value detection control transistor 'and can accurately and quickly detect the input peak voltage of the secondary, the same day, the village is less than the first The invention provides a voltage peak detector with low power consumption, which is composed of a differential amplification crying and a capacitor c, wherein the differential amplifier 1 is ^ ', the two input terminals respectively receive the input signal V (IN) and the output voltage of the detector feedback U Hu ν (ουτ) ' and provide the appropriate charging current to the current mirror 2 to obtain the input signal v (10)) 2 The value is used as an output voltage signal, and the current mirror 2 is used as a charger to provide a charging current required for the electric valley. The differential amplifier i is deleted by the first pM〇s transistor, and the first PMOf The transistor MP2, the first-NM〇s transistor ^^, the second transistor 3 transistor, and the second NMOS transistor MN3, wherein the first transistor 8 is an NMOS transistor The MN MN2 is used as a driver, the first pM 〇§ The crystal MP1 and the first PMOS transistor MP2 are used as an active load, and the third NMOS transistor MN3 is used as a current source and is designed in the form of a diode to provide a current to the difference. The motor amplifier 1 is used. The voltage peak detector proposed by the invention can not only accurately detect the hybrid signal of the input signal, but also effectively reduce the power consumption. [Embodiment] According to the purpose of the present invention, the present invention provides a voltage peak detector with low power consumption, as shown in the seventh figure, which is composed of a differential amplifier, a current mirror 2, and a capacitor. Composed of. The differential amplifier 1 is composed of a first PMOS transistor MP1, a second PMOS transistor MP2, a first NMOS transistor MN1, a second NM〇s transistor mn2, and a third _8 transistor _3 1288239. The first NMOS transistor MN1 and the second MN8 transistor 2 are used as drivers, and the first PMOS transistor MP1 and the second PMOS transistor MP2 are used as active devices. The active load is used, and the third NMOS transistor MN3 is used as a current source and is designed in the form of a diode to provide a current for the differential amplifier 1. • The gates of the first NMOS transistor MN1 and the second NMOS transistor MN2 respectively receive the input signal V(IN) and the output voltage feedback signal of the detector (〇111), the source (3) 〇ι^) connected together and connected to the drain of the third NMOS transistor MN3, and the drain thereof is connected to the drains of the first PMOS transistor MP1 and the second PMOS transistor MP2, respectively; The gate of the second NMOS transistor MN3 is connected to the gate to form a diode, and the source: then = φ; the source of the first PMOS transistor 1 and the second PMOS transistor MP2 Connected to the power supply voltage vdd, and connected together, and the first: PM0S transistor is connected to the poleless pole to form a current mirror configuration.

請再參考第七圖,該電流鏡2係由第三PM0S電晶體]^和第四PM〇S 電晶體MP4所組成。其中,該第sPM〇s電晶體Mp3和第四削〇8電晶體刪 之源極均連接至電源電壓Vdd,而閘極則連接在一起,並連接至第一_〇§ 電晶體MN1之汲極,且該第SPM〇s電晶體Mp3之閘極與汲極係連接在一 起,以形成一電流鏡組態;再者,第四刚〇8電晶體_4之汲極係與電容器 C之一端連接,並形成該電壓峰值檢知器之輸出端,而該電容器另一二 則接地。Referring again to the seventh figure, the current mirror 2 is composed of a third PMOS transistor and a fourth PM〇S transistor MP4. Wherein, the source of the sPM 〇s transistor Mp3 and the fourth 〇8 transistor are connected to the power supply voltage Vdd, and the gates are connected together and connected to the first 〇 电 transistor MN1 a pole, and the gate of the SPM〇s transistor Mp3 is connected to the drain line to form a current mirror configuration; further, the fourth gate 8 transistor 4 and the capacitor C One end is connected and the output of the voltage peak detector is formed, and the other two of the capacitors are grounded.

® 為了便賊明起見,町之推導過程,均將金氧半f晶體以〇rCAD PSpice中之㈣單模絲贿,且料纽道長度觀(ehannd ^她 m—lation)效應。但於後續之模擬驗證時,則考慮了中之所有電晶 體參數(當然包括通道長度調變效應)。 由第七圖所示電路得知,當輸入信號V(IN)大於電容電壓V(C)時,電流® In order to make the thief clear, the derivation process of the town, the gold oxide half f crystal is 单rCAD PSpice (4) single mode bribe, and the effect of the length of the road (ehannd ^ her m-lation) effect. However, in the subsequent simulation verification, all the electro-crystal parameters (including the channel length modulation effect) are considered. It is known from the circuit shown in the seventh figure that when the input signal V(IN) is greater than the capacitor voltage V(C), the current

Id (MN1)會大於(MP2),其中,流入電晶體之電流取正號,而流出 電晶體之電流則取負號,亦即,電流Id (麵)代表流入第一丽〇§電晶體 MN1之/及極電級’而-Id (MP2)則代表济L出第二PM〇S電晶體Mp2之沒極電 流。又 ⑴ -Id (MP1) = -id (MP2) 8 !288239 ⑵ 所以 -Id (MP3) > 〇 而第三PMOS電晶體MP3、第四a ⑶ 晶體所組成的電流鏡組態,所以t_Id 體MP±4也係、為—由PMOS電 等於-Id (MP3),因而可對電容器 二广’電流-Id (MP4)會 V(Q)等於輸人錢v⑽的峰值輕為^動作’直取(OUT)(也就是 當充電動作達至_UT)等於輸入信簡 大器之作用,電流 嗶值冤壓時,由於差動放 ⑷ -Id(MPl) -Id(MP2) = ld(MNl) 所以電流 (5) 出電壓V(OUT)將 -Id (MP3) =-Id (MP4) =〇 :不再對電容器進行充電動作,所以所檢測出的 S寺於輸入信號V(IN)的峰值電壓。 最後當輸入信號V(IN)小於輸出電壓v 處於截止區,電流 C 弟:pM〇S電晶體MP3將 -Id (MP3) =-ld (MP4) =〇 ⑹ 所以也將不會對電容器進行充 V(_仍會維持在輸入信號V(IN)之峰值電乍壓。口此所核測出的輸出電星 本發明所提出之電壓峰值檢知器之 =圖所示,由該模擬結她實,本發明所提出 才月確地檢測出輸入信號之峰值電壓。 杈A时月b 公告^=明^=^少功率消耗,首先比較第五圖所示之中華民國 電齡值檢知器與第七圖所示之本發明較佳 ::Ι*Γ4Τ:Γ;^Γ———- 八-1便用之弟二電晶體_3係設計成 1288239 電晶體麵3之賴接至其汲極,因 ϋϋ、於電源m ,結果本發明可纽減少功率消耗。 峰鮮六圖所示之中華民國公告案號第M2762〇〇號專利案之電壓 =用^圖^差本實施例,由於在第六圖所示之先前 ^ 、包机、、、6差動放大夯1使用之第三NMOS電晶體MN3 开^、至控制電晶體3之輸出端,該控制電晶體3健計成二極體 (式連接在電壓軸檢知器輸人端與第三應〇s電晶體画間極之 差動放日日體3並沒有汲極電流流過’因此’用以提供-電流給 動放大為1使用之第三_s電晶體麵之間極電壓Vg侧係等於 丁(控制電晶體;)Id (MN1) will be greater than (MP2), in which the current flowing into the transistor takes a positive sign, and the current flowing out of the transistor takes a negative sign, that is, the current Id (face) represents the flow into the first 〇 电 transistor MN1 And / the extreme electric level 'and - Id (MP2) represents the second pole of the second PM 〇 S transistor Mp2. Also (1) -Id (MP1) = -id (MP2) 8 !288239 (2) Therefore -Id (MP3) > 电流 and the third PMOS transistor MP3, the fourth a (3) crystal consists of the current mirror configuration, so the t_Id body MP±4 is also - is PMOS-electrically equal to -Id (MP3), so it can be used for capacitors. The current-Id (MP4) will be V(Q) equal to the peak value of the input money v(10). (OUT) (that is, when the charging action reaches _UT) is equal to the role of the input signal simplifier, when the current 冤 value is pressed, due to the differential (4) - Id (MPl) - Id (MP2) = ld (MNl) Therefore, the current (5) output voltage V(OUT) will be -Id (MP3) = -Id (MP4) = 〇: the capacitor is no longer charged, so the detected S-th is the peak value of the input signal V(IN). Voltage. Finally, when the input signal V(IN) is smaller than the output voltage v in the cut-off region, the current C: pM〇S transistor MP3 will have -Id (MP3) = -ld (MP4) = 〇 (6) so the capacitor will not be charged. V(_ will still maintain the peak voltage of the input signal V(IN). The output of the measured electric star is verified by the voltage peak detector of the present invention. In fact, the present invention proposes to accurately detect the peak voltage of the input signal. 杈A 时月 b Announcement ^=明^=^ Less power consumption, first compare the Republic of China electric age value detector shown in the fifth figure The invention is better than the seventh embodiment: Ι*Γ4Τ:Γ;^Γ———- 8-1 is used by the second transistor _3 is designed as 1288239 transistor face 3 is connected to it Bungee, because of the power supply m, the result of the invention can reduce the power consumption. The voltage of the Republic of China Announcement No. M2762 专利 patent case shown in the peak fresh six figure = use the figure ^ difference example, Since the third NMOS transistor MN3 used in the previous ^, charter, and 6 differential amplification 所示1 shown in FIG. 6 is turned on to the output terminal of the control transistor 3 The control transistor 3 is calculated as a diode (the type is connected between the input terminal of the voltage axis detector and the third electrode of the third transistor), and the dipole current flows through the differential body. Therefore, the side voltage Vg side between the third _s transistor surface used to provide - current feed amplification to 1 is equal to D (control transistor;)

’G3(第6圖) =V(IN)- V # 係表示控制電晶體3之臨界電壓⑼—她 反 二電容器充電過程中,由於該第三顺0s電晶體麵3係連接 ίί 此該第三繼0S電晶體顧3之閘極電壓v— 之門們v體刪之源極電壓’亦即該第三舰0S電晶體咖 之閘極電壓ν〇3(本發明)可寫成'G3 (Fig. 6) = V(IN) - V # indicates the threshold voltage of the control transistor 3 (9) - during the charging process of the second capacitor, since the third cis 0s transistor surface 3 is connected ίί The three gates of the 0S transistor Gu 3 gate voltage v - the gates of the v body to delete the source voltage 'that is, the third ship 0S transistor coffee gate voltage ν 〇 3 (the invention) can be written

G3(^m) — V(IN)-VT(MN1)- [2 · Id (MNl ) · L/(KP · W)]1/2 ⑻ 其中’ Vtxmn^表示第一 電晶體之臨限電壓,%和l :該第- NMOS電晶體譲之有效通道寬度及有效通道長度,而处難 示OrCADPspice中之一金氧半電晶體模型參數。比較方程式⑺與⑻可推知G3(^m) — V(IN)-VT(MN1)- [2 · Id (MNl ) · L/(KP · W)] 1/2 (8) where 'Vtxmn^ denotes the threshold voltage of the first transistor, % and l: The effective channel width and the effective channel length of the first NMOS transistor, and it is difficult to show one of the parameters of the metal oxide semi-transistor in OrCADPspice. Comparing equations (7) and (8) can be inferred

Vg3(第6圖)> VG3(本發 } (9) 故本發明可較中華民國公告案號第Μ”·號專利案之電壓峰值檢知 1288239 ' 杰具有較小之電流消耗。 -σ第九圖所示為中華民國公告案號第M276200號專利案之電壓峰值檢知 器(先前技藝)與本發明電壓峰值檢知器之〇rCAD 態分析模擬結 • 果,由該模擬結果可証實,本發明之電壓峰值檢知器可較先前技藝具有更 _ ,之功率消耗。第九圖係以level 3模型且使用〇·25微米CMOS製程參數加以 杈擬(其PMOS電晶體和NM〇s電晶體之零基底偏壓臨限電壓值Vt〇分別為 _ 5V和〇·5ν),其中,PMOS電晶體MP1、MP2、MP3、MP4之通道寬長^匕 =為(W/L)=(2 · 0.25μΓη/〇.25μιη),則眺電晶體議卜丽2和麵4之通道 見長比均為(W/LH〇^m/0.25_,顧〇8電晶體應3之通道寬長比為 Φ (W/L)气〇·25μηι/8 · 0.25㈣,至於電容器C之電容值則為8PF。 本發明之電壓峰值檢知器在使用時可於電容器c兩端並聯連接一開 關,該開關係用以提供-放電路徑,以便將電容器上所儲存之電荷放 俾利於下次輸入電壓信號之峰值檢測。 【發明功效】 本發明所提出之電壓峰值檢知器,具有如下功效: ⑴高集積度及有利於裝置之小型化:由於本發簡提出之龍峰值檢知 不但不需增設-控制電晶體,並且僅使用了 4個刚〇8電晶奶、p NM〇S電晶體以及丨個電容器,因此不但電路架構新穎、簡單心 電晶體數量較少,並且因不需使用運算放大器 ,有利於裝置之小型化等優點; 八備有一 ⑵確度.本發明所提$之電辨值檢知驗顯 確地檢測出輸入信號之峰值電S,因此也具有高精確度^憂點1貝^ 解值獅賴麟辦,顿 功率^ 消耗,因此可有效降低電壓缘值檢知^ =了所選之最佳實施例,但舉凡熟悉本技術之〉 ρ所有相關技術範田壽内之改變都包括在本發明之申請專利範申圍^ 11 1288239 【圖式簡單說明】 第-圖係顯不第-先前技藝中電壓峰值檢知器之電路圖; 電壓,之智 第二圖係顯示第一圖電壓峰值檢知器之輸入電壓信號於 態分析時序圖; 】出 第三圖係顯示第二先前技藝中電壓峰值檢知器之電路圖; 第四圖係顯示第三圖電壓峰值檢知器之輸入電壓信號及 態分析時序圖; 别^壓信鍊之暫 苐五圖係顯示苐二先前技藝中電壓峰值檢知器之電路圖;Vg3 (Fig. 6) > VG3 (this issue) (9) Therefore, the invention can be compared with the voltage peak of the Republic of China Announcement No. Μ". Patent No. 1288239 'Jie has a small current consumption. -σ The ninth figure shows the 峰值rCAD state analysis simulation result of the voltage peak detector (previous skill) of the Republic of China Announcement No. M276200 and the voltage peak detector of the present invention, which can be confirmed by the simulation result. The voltage peak detector of the present invention can have more power consumption than the prior art. The ninth figure is simulated with a level 3 model and using a 〇·25 micron CMOS process parameter (its PMOS transistor and NM〇s) The zero-substrate bias voltage value Vt〇 of the transistor is _5V and 〇·5ν, respectively, wherein the channel width length of the PMOS transistors MP1, MP2, MP3, and MP4 is (W/L)=( 2 · 0.25μΓη/〇.25μιη), then the channel length ratio of the 眺 眺 议 2 和 2 and surface 4 is (W / LH 〇 ^ m / 0.25 _, Gu 〇 8 transistor should be 3 channel width and length The ratio is Φ (W/L) gas 〇 · 25μηι / 8 · 0.25 (four), and the capacitance value of the capacitor C is 8 PF. The voltage peak detector of the present invention can be used when A switch is connected in parallel to both ends of the container c for providing a -discharge path for discharging the charge stored on the capacitor for peak detection of the next input voltage signal. [Effect of the invention] The voltage peak proposed by the present invention The detector has the following effects: (1) High integration degree and miniaturization of the device: Since the dragon peak detection proposed by the present invention does not need to add a control transistor, and only 4 Gangqiao 8 electron crystals are used. Milk, p NM〇S transistor and a capacitor, so not only the circuit structure is novel, the number of simple ECG crystals is small, and because it does not need to use an operational amplifier, it is beneficial to the miniaturization of the device; eight preparations have one (2) accuracy. The electrical identification test of the present invention can accurately detect the peak electric power S of the input signal, and therefore has high accuracy, and the worry value is 1 ^ ^ solution value, the power of the lion, the power consumption, Effectively reducing the voltage edge value detection = the selected preferred embodiment, but all the related techniques of the technology are all included in the patent application of the present invention, Fan Shenwei ^ 11 12 88239 [Simple diagram of the diagram] The first diagram shows the circuit diagram of the voltage peak detector in the previous technique; the second diagram of the voltage, Zhizhi shows the input voltage signal of the first graph voltage peak detector in the state analysis Timing diagram; 】 The third diagram shows the circuit diagram of the voltage peak detector in the second prior art; the fourth diagram shows the input voltage signal and state analysis timing diagram of the voltage peak detector of the third diagram; The five-figure diagram of the chain shows the circuit diagram of the voltage peak detector in the previous prior art;

苐六圖係顯示第四先前技藝中電壓峰值檢知器之電路圖; 第七圖係顯示本發明較佳實施例之電壓峰值檢知器之電路圖; 第八圖係顯示本發明較佳實施例之輸入電壓信號及輸出電壓信號之斬义 析時序圖; ^㈢態分 電流分柝時序 第九圖係比較本發明電壓峰值檢知器與第四先前技藝之暫態 圖0 【主要元件符號說明】 1 差動放大器 D 二極體 D2 二極體 0P1運算放大器 2 電流鏡 D1 二極體FIG. 6 is a circuit diagram showing a voltage peak detector in a fourth prior art; FIG. 7 is a circuit diagram showing a voltage peak detector according to a preferred embodiment of the present invention; and FIG. 8 is a view showing a preferred embodiment of the present invention. The timing diagram of the input voltage signal and the output voltage signal; ^ (three) state current bifurcation timing ninth diagram is compared with the voltage peak detector of the present invention and the fourth prior art transient diagram 0 [main component symbol description] 1 differential amplifier D diode D2 diode 0P1 operational amplifier 2 current mirror D1 diode

Id(MN3) NMOS電晶體MN3之汲極電流 0P2 運算放大器 JW1 第一 PMOS電晶體MP2 第二PMOS電晶體 MP3 第三PMOS電晶體MP4 第四PMOS電晶體 第一 NMOS電晶體MN2 第二NMOS電晶體 第三NMOS電晶體Vdd 電源電壓Id(MN3) NMOS transistor MN3 drain current 0P2 operational amplifier JW1 first PMOS transistor MP2 second PMOS transistor MP3 third PMOS transistor MP4 fourth PMOS transistor first NMOS transistor MN2 second NMOS transistor Third NMOS transistor Vdd power supply voltage

Rl 電阻器 R2 電阻器 V(IN)輪入電壓信號 ν(〇υτ)輸出電壓信號 c 電容器 12Rl resistor R2 resistor V(IN) wheeled voltage signal ν(〇υτ) output voltage signal c capacitor 12

Claims (1)

1288239 九、申請專利範圍: 1· 一種電壓峰值檢知器,其包括: 一輸入端,用以提供一輸入電壓信號; 輸出知,用以輸出該輸入電壓信號之學值電塵; :電源供錢L提供輕峰值檢知騎需之騎顧(侧)和參考接 ^m1) ’糊_輸人電壓信號及輸出端之輸出電壓回授信 號,亚&供充電電流信號給電流鏡(2),該差動放大器⑴具有法1288239 IX. Patent application scope: 1. A voltage peak detector, comprising: an input terminal for providing an input voltage signal; and an output for outputting the learned value of the input voltage signal; Money L provides the light peak detection of the rider's ride (side) and reference connection ^m1) 'paste_input voltage signal and the output voltage feedback signal of the output, sub & charge current signal to the current mirror (2 ), the differential amplifier (1) has a method ,、且:提供—電流給差動放大器⑴使用之第三⑽電晶體(廳)= 弟二MOS電晶體_3)係設計成二極體形式,亦即將該第三· (MN3)之閘極與汲極連接在一起; 曰^ -電流鏡(2),用以根據該差動放大器⑴所提供之充電電流信號,而提供一 充電電流給電容器(〇 ;以及 ’、 私合球)’该電容器之一端連接至電流鏡⑺,以便接收該電流鏡所供應 之充電電流,而另一端則連接至參考接地。 ^ 2.如申請專利範圍第1項所述之電壓峰值檢知器,其更包括:, and: supply - current to the differential amplifier (1) using the third (10) transistor (office) = brother two MOS transistor _3) is designed in the form of a diode, that is, the third (MN3) gate The pole is connected to the drain pole; the 电流^-current mirror (2) is configured to provide a charging current to the capacitor (〇; and ', private ball) according to the charging current signal provided by the differential amplifier (1) One end of the capacitor is connected to the current mirror (7) to receive the charging current supplied by the current mirror, and the other end is connected to the reference ground. ^ 2. The voltage peak detector according to claim 1, which further comprises: :開關,該開關係與該電容||並聯連接,肋提供—放電路徑,以便將電容 為上所儲存之電荷放電,俾利於下次輸入電壓信號之峰值檢測。 3·如申請專利範圍第2項所述之電壓峰值檢知器,其中該開關係由一金氧半電晶 體所組成。 4·如申請專利範圍第1項所述之電壓峰值檢知器,其中該差動放大器⑴包括: :第一PMOS電晶體(MP1),其源極連接至電源電壓(Vdd),閘極與第二pM〇s 電晶體(MP2)之閘極相連接,而汲極則與該電流鏡⑺以及第—NM〇s電晶體 (MN1)之汲極相連接; 一第二PMOS電晶體(MP2),其源極連接至電源電壓(vdd"閘極與汲極連接 在一起,並連接至第一PMOS電晶體(MP1)之閘極,且汲極亦與第:NM〇s 電晶體(MN2)之汲極連接; 一第一NMOS電晶體(MN1),其源極與第二NM〇s電晶體(_2)之源極以及 第二NMOS電晶體(MN3)之汲極相連接,閘極用以接受該輸入電壓信號,而 13 1288239 没極則與該電流鏡(2)以及第一PMOS電晶體(MP1)之汲極相連接; 一第二NMOS電晶體(_2),其源極與第一NMOS電晶體(_丨)之源極以及 tNMOS電晶體(臟3)之;;及極相連接,間極用以接受輸出端之輸出電壓回 授信號,而汲極則與該第3M0S電晶體(MP2)之汲極相連接;以及 一第三NMOS電晶體(_3),其源極連接至參考接地,閘極與汲極連接在 一起,並與第一以及第二NMOS電晶體(_丨和_2)之源極相連接,該第三 NMOS電晶體(MN3)係作為一電流源且用以提供一電流給差動放大 使用。 叩 5·如申=專利範圍第4項所述之電壓峰值檢知器,其中該電流鏡(2)包括:The switch is connected in parallel with the capacitor ||, and the rib provides a discharge path for discharging the charge stored on the capacitor for the peak detection of the next input voltage signal. 3. The voltage peak detector of claim 2, wherein the open relationship consists of a metal oxide semi-electric crystal. 4. The voltage peak detector according to claim 1, wherein the differential amplifier (1) comprises: a first PMOS transistor (MP1) whose source is connected to a power supply voltage (Vdd), and a gate The gate of the second pM〇s transistor (MP2) is connected, and the drain is connected to the drain of the current mirror (7) and the first NM〇s transistor (MN1); a second PMOS transistor (MP2) ), the source is connected to the power supply voltage (vdd" the gate is connected to the drain and connected to the gate of the first PMOS transistor (MP1), and the drain is also connected to the :NM〇s transistor (MN2) a drain connection; a first NMOS transistor (MN1) whose source is connected to the source of the second NM〇s transistor (_2) and the drain of the second NMOS transistor (MN3), the gate For receiving the input voltage signal, 13 1288239 is infinitely connected to the current mirror (2) and the first PMOS transistor (MP1), and a second NMOS transistor (_2), the source is The source of the first NMOS transistor (_丨) and the tNMOS transistor (dirty 3); and the pole phase connection, the interpole is used to receive the output voltage feedback signal of the output terminal, and the drain electrode and the first a drain of the 3M0S transistor (MP2) is connected; and a third NMOS transistor (_3) having a source connected to the reference ground, the gate connected to the drain, and the first and second NMOS transistors The source of (_丨 and _2) is connected, and the third NMOS transistor (MN3) is used as a current source and is used to provide a current for differential amplification. 叩5·申申= patent scope item 4 The voltage peak detector, wherein the current mirror (2) comprises: -第JMOS電晶體(MP3),其源極連接至電源電壓网,閑極與汲極連接 在一起,並連接至第一NMOS電晶體_丨之汲極;以及 -第四PMOS電晶體(MP4),其源極連接至電源電壓(vdd),問極 電晶體之間«接,而沒極則與該電 第二刪弟⑽ (MN2)之閘極相連接。 % Bg m- a JMOS transistor (MP3) having a source connected to the supply voltage network, a dummy pole connected to the drain, and connected to the drain of the first NMOS transistor _丨; and - a fourth PMOS transistor (MP4) ), the source is connected to the power supply voltage (vdd), and the pole is connected to the gate, and the pole is connected to the gate of the second (10) (MN2). % Bg m 1414
TW94140507A 2005-11-18 2005-11-18 Peak voltage detector having lower current consumption TWI288239B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94140507A TWI288239B (en) 2005-11-18 2005-11-18 Peak voltage detector having lower current consumption

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94140507A TWI288239B (en) 2005-11-18 2005-11-18 Peak voltage detector having lower current consumption

Publications (2)

Publication Number Publication Date
TW200720669A TW200720669A (en) 2007-06-01
TWI288239B true TWI288239B (en) 2007-10-11

Family

ID=39202957

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94140507A TWI288239B (en) 2005-11-18 2005-11-18 Peak voltage detector having lower current consumption

Country Status (1)

Country Link
TW (1) TWI288239B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105652071A (en) * 2016-02-22 2016-06-08 深圳市明微电子股份有限公司 Pulse peak amplitude measuring device and measuring circuit thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105652071A (en) * 2016-02-22 2016-06-08 深圳市明微电子股份有限公司 Pulse peak amplitude measuring device and measuring circuit thereof
CN105652071B (en) * 2016-02-22 2018-12-28 深圳市明微电子股份有限公司 Pulse spike amplitude measurement device and its measuring circuit

Also Published As

Publication number Publication date
TW200720669A (en) 2007-06-01

Similar Documents

Publication Publication Date Title
JP3719587B2 (en) Semiconductor devices and IC cards
TW200928656A (en) Bandgap reference voltage generating circuit
US20120242393A1 (en) Converter including a bootsrap circuit and method
US9929643B2 (en) Charge pump circuit and method for operating a charge pump circuit
US9325362B2 (en) Rectification circuit and wireless communication apparatus using the same
CN107294369B (en) A kind of constant current start-up circuit applied to booster converter
JP2007188245A (en) Reference voltage generating circuit and semiconductor integrated device
TWI288239B (en) Peak voltage detector having lower current consumption
US8729883B2 (en) Current source with low power consumption and reduced on-chip area occupancy
TWI490506B (en) Circuit and method for determining a current
JPS6190509A (en) Mimic circuit for transistor or diode
FR2866763A1 (en) Audio amplification device for mobile phone, has biasing circuit which biases bulk of MOS transistors with voltages equal to supply voltage and voltage of node at beginning and end of ramp of reference voltage, respectively
US20110169551A1 (en) Temperature sensor and method
TWI252631B (en) High-speed receiver for high I/O voltage and low core voltage
TWI644195B (en) Buffer stage and a control circuit
CN113741615B (en) Voltage reference circuit
US8378716B2 (en) Bulk-driven current-sense amplifier and operating method thereof
JP2005122753A (en) Temperature detection circuit, heating protection circuit, various electronic apparatus incorporating these circuits
TW517161B (en) Voltage peak detector
TWM337745U (en) Peak voltage detector having controllable NMOS current source
TWM315337U (en) Peak voltage detector having NMOS current source and one-sided transistor load
TWI301894B (en) Peak voltage detector having pmos current source
Dubey et al. Performance improvement of operational amplifier in subthreshold region using forward body bias
TWI245905B (en) CMOS peak voltage detector
TWM335097U (en) Peak voltage detector having controllable NMOS current source and output stage

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees