TWI274616B - Method and system for removing thin metal film - Google Patents

Abstract

A system for removing a thin metal film comprising an inclining metal plate electrode (21) for guiding a downward electrolyte flow, an auxiliary electrode (22) placed on the upstream or downstream side of the metal plate electrode (21) such that a part of the auxiliary electrode is immersed into the electrolyte, and a power supply (23) for applying a DC voltage to the both electrodes. The system is used to remove a metal thin film (24a) on the surface of an insulator (24) by making the electrolyte (26) flowing down the metal plate electrode (21) strike against the metal thin film (24a) under a state where the DC voltage is applied to the metal plate electrode (21) and the auxiliary electrode (22).

Description

1274616 发明, invention description: [Technical field to which the invention pertains] + The present invention relates to a method for removing a metal thin film from a substrate without satisfying a quality management standard, for example, a metal thin film formed by vapor deposition or electroplating And means for carrying out the method. [Prior Art] A high-performance glass substrate excellent in optical properties (penetration ratio, etc.) and mechanical properties (flatness, etc.) is used for, for example, a flat panel display. However, since it is expensive, when the metal film formed on the surface does not satisfy the quality management standard, it is desirable to remove the metal film and reuse it. The method of removing the metal film has a method of removing by chemical etching. The method is as shown in FIG. 18, and the substrate 2 on which the metal thin film to be removed is formed is immersed in the chemical liquid 1 which can dissolve the metal thin film by a chemical reaction, thereby removing the metal thin film (see also For example, JP-A-H06-321581, JP-A-H09-86968). However, the chemical removal of the square & ) Due to the special care required, the workability is deteriorated. 2) Corrosion resistance must be imparted to the device, and the composition will increase. 3) The chemical liquid is basically discarded when it is used up, and a large amount of waste liquid is generated. 4) After use, The treatment of the waste liquid of the chemical liquid is difficult. The present invention has been made in view of the above conventional problems, and an object thereof is to provide a chemical liquid which does not require the use of a strong acid or a strong alkali and which does not require precision. The position control is a method for removing the high efficiency of the metal film from the 274616 in a non-contact manner and a device for carrying out the method. [Explanation] The method for removing the ith metal film of the present invention is to use a metal plate electrode (in a slanted configuration for guiding the flow of the electrolyte), an auxiliary electrode (on the upstream side or the downstream side of the metal plate electrode 21, to be partially immersed in the electrolyte), and a DC voltage source (pair) The apparatus for removing a film of the invention according to the present invention, wherein the metal plate electrode and the auxiliary electrode are applied with a direct current (four) state, so that the electrolyte and the surface of the insulator flow from the metal plate electrode The metal film collides to remove the metal film. According to the first invention, it is not necessary to use a strong acid or a strong chemical liquid, and it is not necessary to perform precise position control of the metal film on the surface of the nozzle electrode edge, 'that can be in a non-contact manner The method for removing the second metal thin film of the present invention is to remove the metal thin crucible with high efficiency without damaging it. The apparatus for removing a metal thin film of the invention 2 (in the apparatus for removing a metal thin film according to the present invention, a bottom electrode is disposed below the two electrodes so as to straddle between the metal plate electrode and the auxiliary electrode, and the bottom electrode is also In the method of removing the first metal thin film of the present invention, in the method of removing the first metal thin film of the present invention, a DC voltage is applied to the bottom electrode disposed on the back side of the insulating material. The electrolyte flowing down from the metal plate electrode collides with the metal film on the surface of the insulator to remove the metal film. Thereby, the effect of the present invention can be further enhanced. Ϊ 274616 卜: Others 1 or 2 In the present invention, if a moving mechanism is provided, at least one of the insulation in the electrolyte and the metal plate electrode is moved to the other side to move while the insulator and the metal plate electrode are relatively moved. The method of removing the metal thin film and removing the wide range of metal thin films of the present invention is as described in the above-mentioned "Ming, The insulating material plate with the metal electrodes into the heart does not stout stop 3 + D 3 of Ti removal of the metal thin film side A, * " inhibit early invasion of the electrolyte side of the end portion of the insulator. Thereby, the occurrence of a pitting-like metal film can be prevented. Further, in the method of removing the fourth metal thin film of the present invention, in the above-described third and third inventions, a metal plate electrode is rotatably electrically connected, and a polishing substrate is provided at a metal thin film contact portion of the electrode. Alternatively, the fourth metal film removing device for supplying the polishing substrate to the metal film contact portion of the electrode is wiped over the surface of the metal film by the polishing substrate located at the contact portion of the metal film of the electrode. According to the fourth aspect of the invention, the electrolytic melting can be analyzed and removed. [Embodiment] The present invention will be described in more detail with reference to the accompanying drawings. - First, an example of the apparatus for removing the i-th metal film of the present invention is shown in Figs. 1 to 3 . In the first to third figures, the 21st and the insulator 24 which will be described later have substantially the same width, and the gold I274616 plate electrode 22 which is erected above the electrolyte 26 in an inclined manner is immersed in the Thunder>; ^ ^ r r 1 / / / / in the electrolyte 20 of the auxiliary electrode 23 is a DC voltage power supply, 24 # read, for example, the reciprocal by ... again, the electrolyte in the processing tank 25 (film 24 insulation, its The surface is formed with a metal to be removed. . . . ' Μ indicates the electrolytic melting analysis portion, and v indicates the valve. The example shown in the middle of FIG. 1 sends the electrolyte 26 in the electrolytic solution tank 27 to the metal by the system 28 . The plate electrode slightly assists the bungee 22 to be a surface of the columnar insulator 24 which is entirely of the surface amine. The metal phase 24a is erect in a non-contact state, and the examples shown in Fig. 2 and Fig. 3 are auxiliary. The electrode 22 is formed in a column shape such as a rotatable roller and is disposed in parallel with the metal plate electrode 2' such that the auxiliary electrode 22 is in contact with the metal film "a" on the surface of the insulator 24, as shown in FIG. The electrolyte 26 is recovered in the electrolyte tank 27, and the recovered electrolyte is filtered. After passing through the metal plate electrode 21, the electrolyte 26 can be recycled. Further, the roller-shaped auxiliary electrode 22 can be fixed in a non-contact state with the metal film 2乜 on the surface of the insulator 24. The first invention described above removes the metal thin film 2乜1 based on the following principle to cause the electrolytic solution 26 to flow from the metal flat electrode 2 1 toward the metal thin film 2 4 a to form an electrically continuous flow 26a. 2 If the metal flat electrode 21 is used Then, a closed circuit composed of a DC voltage source 2 3 - a metal plate electrode 21 - a continuous flow 26a - a metal film 24a - an electrolyte 26 - an auxiliary electrode 22 - a DC voltage source 23 is formed. 3 Once the aforementioned circuit is formed, the voltage is formed. The current will become the curve shown in Fig. 4, paragraph 1474616. Once the super-electrode 21 and the metal film are pressed, the metal plate is electrically fine. In addition, the surface of the 曰, ^ begins to generate hydrogen, oxygen ions and micro-companion. In this bubble: = B voltage, the current starts to rise rapidly, and the seat 1 will increase rapidly. 4 Further, once the voltage exceeds the C voltage by M^ σ, the voltage and the current are approximately proportional. It is said that the law of dissolution and precipitation of the film is generally established, and it can be seen that the metal 24, the insulation 24, and the removal of the mold 4 can be carried out. The M人M field Γ, Λ does not undergo electrolytic melting analysis. Also, the D voltage....^. The minimum voltage value, that is, the decomposition voltage, is determined by the electrode material (surface activity), the bud electrolyte, the line resistance, etc. 1 W=7? 1 · &quot ;· k·卜 t · · β 1 ·, melting analysis efficiency (%) π 2 : current efficiency (%) k : electrochemical equivalent (mg/c) I : electrolysis current (A) t : electrolysis time (sec The first invention (except the examples shown in Figs. 2 and 3) is stolen because it is a processing method that is not connected to f, so that the insulation is not damaged. Furthermore, there is no need for high-precision position control between the electrode and the metal film. x, which is a chemically-resolved process that is not chemically removed, as long as it is an electrolyte that can flow current, and can use a neutral salt electrolyte such as NaN〇3 or NaC1, so that it has excellent workability and electrolyte solution. Waste liquid treatment can also be carried out easily. Further, the contact 1 of the present invention shown in Fig. 2 is only a roller-shaped auxiliary electrode, and is basically the same as described above. In addition, in the present invention, for example, the case where the insulator 24 is moved to the second film 24a becomes the most terminal, as shown in Fig. 5 (4), all of which belong to 24a and auxiliary. The distance between the electrodes 22 will become larger, and the current amount of the flow c% will be worse than that of the electrolysis wide machine. As shown in Fig. 5(b), the final metal film 24a is on the downstream side (Fig. 5). On the left side of the paper). In the present invention, as shown in Fig. 6, as shown in Fig. 6, in the downstream phase of the primary 24, the end of the paper on the left side of the corpse of 24 is provided with the insulator 24 The conductor plate 3 1 of the same thickness is electrically conductive even if the insulator 23, which is a winter end, is formed by the auxiliary power source 22' by the DC voltage power source body plate 31 - the plate electrode 21 - the continuous flow - the metal film 24a -刼^ Solution 26—Auxiliary electrode 22—The DC voltage source 23 is constructed to be a closed circuit that prevents current efficiency from decreasing. The metal film body = the downstream end. Further, in order to form the above-described closed circuit, the length of the direction in which the conductive auxiliary electrode is moved must be longer than the interval a between the metal plate electrode 21 and the auxiliary electrode 22. n blood P makes 疋 replace the downstream side end of the insulator 24 which is not shown in Fig. 6 = the conductor plate 31 which is substantially the same thickness as the _ 24, and is used to precipitate the electric material like Μ·T The electrodes are arranged in a plurality of cathodes (for example, the plate electrodes 21)' anodes (for example, the auxiliary electrodes 22 are arranged in plural numbers: or as shown in FIG. 7 (8), with the inside of the circle 32 as the cathode and the outside as the anode. The object can also achieve the same effect as the provision of the conductor plate 31. Further, in the seventh item (4), the cathode and the anode are connected by the insulator 33 as a 12 1274616. Next, the second metal film of the present invention. Fig. 8. In Fig. 8, one of the spears and one of the spears is illustrated between the 29-plate cross-metal plate electrode 21 and the spot electrode 22 under the force of the electrode 21 and the auxiliary structure and the third figure. The same example. & surface electrode, on the other hand, in the second!

The distance between the 5 pole and the film is far away, and the current is gradually resolved. Therefore, when the insulator 24 is placed in the smelting coat, the metal thin ridge 24a formed by the spleen surface is removed as a whole. In the first and second inventions, the middle body is provided with a moving mechanism that causes at least one of the electrolytic metal plate electrodes 21 to move relative to the other, and the insulator 24 is made of gold. The plate electrodes are relatively moved to remove the metal thin film 24a around the metal film 24. At this time, in the third and second ==

The width of the plate electrode 21 is w (cm), the relative movement speed is V (Cm / min), and the current is 1 (A), and has ,. 1 ^ I / (WX v) ^ 〇. It is better to move the relative movement speed of the range of 〇3 relationship. When the metal plate electrode 21 is moved relative to the other, in the first and second inventions, for example, the auxiliary electrode 22 to which a positive voltage is applied is located on the upstream side of the metal plate to which the negative voltage is applied and the 521. That is, it is preferable that the auxiliary electrode 22 is disposed so as to pass through the metal thin film 24a on the surface of the insulator 24 before the metal flat electrode 21. 13 1274616 The reason is that in the electrolytic melting analysis, the anode portion to which a positive voltage is applied is melted and analyzed, so that the melting of the metal thin film 24a is self-contacting: where a negative voltage is applied, for example, in FIGS. 1 to 3 In the example shown in Fig. 5, and Fig. 6 and Fig. 8, the metal thin crucible 24a located below the metal plate electrode η is decimated. That is, if it moves in the opposite direction, the refining portion of the metal thin film 24a passes through the electrodes, and it is advantageous to form the closed circuit mentioned above, and it is impossible to perform continuous dissolution. Further, in order to prevent the anode from being dissolved and precipitated, it is desirable to apply the surface to the anode electrode. In the foregoing second invention, when the metal plate electrode moves on the insulator 24, if the auxiliary electrode 22 is fixed, the electrode 乂 distance changes with the movement of the metal plate electrode 21, and the electric method changes. The uniform removal of the metal thin film 24a cannot be performed. In the case of the machine, the auxiliary electrode 22 is arranged in parallel with the metal plate electrode 21 as shown in Fig. 3 to solve this problem. 〜丁Configuration' enables both to move at the same time. "In the second invention, if the metal film 24a is removed

Si into I:: % solution leaching "overlying the insulator 24, the insulation is 〇P is resolved by electrolysis of the metal plate electrode 21 or the auxiliary electrode 22 1 . This is because the electrode usually has two electrodes... strength) The strongest, the melt analysis occurs only between the electrodes, but Λ (the same electric field strength between the electrodes: the electric field is concentrated and becomes the same, the electric field at the end of the insulator 24 is not uniform, the metal thin material 1274616 24a The removal of the metal thin film 24a at the end of the insulator 24 may be in the form of pitting as shown in Fig. 9. Further, 24b in Fig. 9 shows a metal thin film remaining in a punctiform shape. Even if part of the residual punctiform metal film 24b passes through the metal plate electrode 2 1, the metal film cannot be continuously melted out due to the punctiform portion, and the closed circuit mentioned above cannot be formed, and the metal film 2 is not formed. In the first or second invention, the intrusion member for suppressing the electrolyte solution 26 is provided on the inlet side of the insulator 24 of the metal plate electrode 21, for example, so that the width of the insulator 24 is substantially the same as that of the insulator 24. 1st of width The rubber wall 34a is shown as being as close as possible to the surface of the insulator 24, or the rubber roller 34b shown in Fig. 1 having a width substantially the same as the width of the insulator 24 is pressed against the insulator by the spring 35. When the surface of the object 24 is provided, the electrolyte solution 26 can be prevented from invading the end portion of the insulator 24 at an early stage, and the occurrence of the punctiform metal film 24b can be prevented. This is the third invention. In the third aspect of the invention, since the current flows through the electrolyte solution %, the current flowing in the electrolyte solution 26 causes the deterioration of the melting of the metal thin film 24a. In the first to the third metal plate electrodes 21 and The auxiliary electrode 22 is disposed between the auxiliary electrodes 22 as close as possible to the surface of the insult 24, such as an insulator wall having a width substantially the same as the width of the discharge member 24, thereby reducing the current of the electrolyte 26 and improving the current. In the first to third inventions, the metal film 24a is efficiently removed while avoiding damage to the material 24, but it is also due to the fact that the metal film 24a is efficiently removed. Current flowing in the electrolyte 26 When the metal thin film 2 is melted and analyzed, and the metal thin film 24a is removed, the residual residual amount of the film is analyzed by electrolytic melting. Therefore, in the first to third inventions, the metal flat plate electrode 21 can be used instead of the rotation. The electrode 37 is provided with a polishing substrate at the contact portion of the electrode 37 with the gold lip film 24a, or a counter electrode 37' and a metal

The contact portion of the film 24a is supplied to a supply mechanism of the polishing substrate. According to this configuration, the surface of the metal thin film 24a can be wiped by the polishing substrate located at the contact portion between the electrode 37 and the metal thin film 24a, and the film remaining in the electrolytic fusion analysis can be completely removed. This is the fourth invention. J珂V solid-shoring configuration

An example in which the electrolyte solution 26 is supplied to the center portion of the rod-shaped electrode 37 which is rotatable by the water-permeable polishing substrate, and the electrolyte solution 26 is allowed to flow out from the peripheral portion of the rod-shaped electricity 37. In the example shown in Fig. 14, the auxiliary electrode 22 shown in Fig. 13 is arranged in parallel with the rod electrode 37. In the example shown in Fig. 15, the rod shape shown in Fig. 13 is shown. Ding ^ is changed to a disk-shaped electric 37 which is rotatably arranged to have a water-permeable abrasive substrate. Further, in the example shown in Fig. 16, the auxiliary electric power 22 shown in Fig. 14 is formed into a roll shape and is in contact with the metal thin film 2 of the surface of the insulator 24, and the example shown in Fig. 17 is substituted for the inside of the counter electrode 37. The supply of the electrolyte is changed from the external supply of the electrolyte 26. In the above example, the case where the polishing substrate is disposed at the contact portion is shown, the electrode 37 is thin with the metal thin layer 24a, but the electrode 27 may not be disposed with the electrode 12 and the metal film 24a. The contact portion supplies the abrasive substrate. The following description will be made on the results of the implementation performed to confirm the effects of the present invention. A. The first embodiment of the present invention (1) The first metal film removing device (the width of the metal plate electrode: 1 〇〇〇inm) of the present invention having the configuration shown in Fig. 3 is used, and the following processing conditions are used. The method for removing the first metal thin film of the present invention is carried out, and as a result, a thickness of 1 〇〇〇><1〇.1() of the thickness of the claw can be deposited on a glass substrate of 100 nm×10 mm. The film is effectively removed, and the glass substrate can be regenerated. Moreover, the second metal thin film removal method of the present invention is carried out under the same processing conditions except that the auxiliary electrode of the report is fixedly disposed so as not to be in contact with the glass substrate, and the current is changed to 30 〇A. As a result, in the same manner as described above, the aluminum thin film vapor-deposited on the glass substrate can be effectively removed, and the glass substrate can be regenerated. [Processing conditions] Electrolyte: 20% NaCl #

Discharge flow rate: about 30 L/min Applied voltage: about 100 V Current: 150 A Glass substrate moving speed: 1 m/min B · First embodiment of the present invention (Part 2) The first aspect of the present invention having the configuration shown in Fig. 3 As shown in Fig. 6, in the state in which the carbon plate of the same thickness is provided at the end of the glass substrate 17 !274616 (thickness: 0.7 mm) of i〇〇〇mmX 1〇〇〇nim, the following is the following: The processing conditions are described, and the method for removing the second metal thin film of the present invention is carried out. As a result, the aluminum thin film having a thickness of 1 〇〇〇 x 1 〇 1 Gm vapor-deposited on the glass substrate can be effectively removed until the end portion, and the glass substrate can be processed. Regeneration. [Processing conditions]

Electrolyte: 5% NaCl Jet flow rate: about 30 L/min Applied voltage: about 1 〇〇V Current: 300 A Glass substrate moving speed: lm/min C. Third embodiment of the present invention (one) Using Figure 10 The third metal thin film removing device of the present invention is configured to perform the method for removing the third metal thin film of the present invention under the following processing conditions. As a result, the glass of 10 mm><1 mm can be obtained. The aluminum film of the thickness ioooxio-wm of the vaporized ore on the substrate (thickness 0.7 mm) is effectively removed until the end portion, and the glass substrate can be regenerated. [Processing conditions]

Electrolyte: 5% NaCl Discharge flow rate: about 30 L/min Applied voltage: about 1 〇〇V Current: 300 A Glass substrate moving speed: lm/min Inhibition of intrusion member: Rubber wall D. Third embodiment of the invention ( The second method of removing the third metal thin film of the present invention is carried out under the following processing conditions, and the result is as compared with other implementations. In the case of increasing the moving speed of ι〇%, the film of the thickness of l_XlG.H)m which is evaporated on the glass substrate of U)00mmX1_mm (thickness 〇7) can be effectively removed, and the glass substrate can be regenerated. [Processing conditions] Electrolyte·· 5% NaCl Concentration flow rate: about 30L/min

Applied voltage: about 1 〇〇V

Current: 300A Glass substrate moving speed: l.lm/min Insulator wall: Vinyl chloride wall E. Fourth embodiment of the present invention The fourth metal film removing device of the present invention having the configuration shown in Fig. 16 is used. The processing conditions and the method for removing the fourth metal thin film of the present invention are carried out. As a result, the aluminum film having a thickness of 10 〇〇〇 X 10 〇 'm which is evaporated and plated on a glass substrate of 1000 mm × 1000 mm can be completely removed without residue. The regeneration of the glass substrate can be performed. [Processing conditions] Electrolyte: 20% NaCl Supply flow rate · About 30 L/min Rod electrode rotation number: 600 rpm Abrasive abrasive particles · #3000 Alumina abrasive grains (mixed in electrolyte solution) 19 1274616

Applied voltage: about 100 V Current: 300 A Glass substrate moving speed: 1 m/min Although the above embodiment does not correspond to all the patent claims, it is self-evident that even the patent application range not mentioned in the examples According to the invention, the metal thin film formed on the insulator can be effectively removed, and the insulation can be regenerated.

Industrial Applicable God As described above, the present invention does not require the use of a chemical solution of a strong acid or a strong alkali and does not require precise position control of the metal film on the surface of the insulator by the electrode, that is, the metal film can be efficiently removed in a non-contact manner in principle. The use of expensive functional glass substrates used in the semiconductor field can be achieved without damaging the insulator. [Simple description of the schema] (1) Schema section

Fig. 1 is a schematic configuration view showing an example of a device for removing a metal thin film according to the first aspect of the invention. Fig. 2 is a schematic view showing a second example of a second embodiment of the apparatus for removing a metal thin film according to the present invention. Fig. 4 is a view showing the entire configuration of Fig. 2; __Metal plate electrode - continuous flow ~ metal film - electrolyte in the processing tank ~ auxiliary electrode - voltage and current when the DC voltage source forms a closed circuit. ^ i Figure 5 (4) is the first invention in The original part of the residual metal film in the terminal part is 12 1274616. The figure is shown in the figure. Figure 5 (b) is the insulation of the metal film remaining in the terminal part - Figure 6 is used to illustrate the second aspect of the present invention. Fig. 7 (4) and (b) are diagrams for explaining another aspect of the present invention in which metal film residue is prevented from occurring at the end portion. ^ 8th wire is used for illustration. A schematic diagram of an example of a device for removing a metal thin film according to the second aspect of the present invention is shown in Fig. 9. Fig. 9 is a view showing a gold-based film which remains in a punctiform shape at the end portion of the insulating material. In addition to the metal film of the third invention BRIEF DESCRIPTION OF THE DRAWINGS Fig. 11 is a schematic block diagram showing another example of a device for removing a metal thin film according to a third aspect of the present invention. Fig. 12 is a view showing another embodiment for carrying out the third invention. Fig. 13 is a schematic view showing an example of a device for removing the metal thin film of the fourth invention. Fig. 14 is a view showing the fourth embodiment. Fig. 15 is a schematic view showing a third example of a device for removing a metal thin film according to a fourth aspect of the invention. Fig. 16 is a view showing a schematic configuration of a second example of the apparatus for removing a metal thin film according to the fourth aspect of the invention. A schematic configuration diagram of a fourth example of the apparatus for removing a metal thin film according to the fourth aspect of the present invention is shown. Fig. 217461 shows a schematic configuration diagram of a fifth example of the apparatus for removing a metal thin film according to the fourth aspect of the present invention. Fig. 18 is an explanatory diagram of a method of removing a metal thin film by chemical etching (2) Component symbol 1 Chemical liquid 2 Substrate 21 Metal flat electrode 22 Auxiliary electrode 23 DC voltage power supply 24 Insulation 24a, 24b of metal film 25 processed groove 26a continuous flow of electrolyte 26 electrolyte solution tank 28 pump 27 filter 31 30 32 cylindrical conductive plate 34a of the insulator 33 made of rubber walls 34b rubber roller 35 spring

22 1274616

36 37 Μ V Insulation wall Electrode Electrolytic melting analysis valve

twenty three

Claims (1)

1274616 Pickup, Patent Application Range: 1 · A method for removing a thin metal crucible, characterized by: a pair of metal plate electrodes arranged in an inclined shape, and an auxiliary electrode (on the upstream side or the downstream side of the metal plate electrode, in part The electrolyte which flows down from the metal plate electrode collides with the metal film on the surface of the insulator to remove the metal thin film while being immersed in the electrolyte. 2. The method for removing a metal thin film according to claim 1, wherein 'the bottom surface electrode between the metal plate electrode and the auxiliary electrode is disposed on the back side of the insulator, and the bottom electrode is also applied to the auxiliary electrode The state of the DC voltage of the same pole is such that the electrolyte flowing down from the metal plate electrode collides with the metal film on the surface of the insulator to remove the metal film. A method of removing a metal film of $2, wherein the metal film is removed while the insulator and the metal plate electrode are relatively moved. 4. The method for removing a metal thin film according to the first and second aspects of the patent application section 'wherein' is provided with an electrolyte intrusion preventing member on the inlet side of the metal plate electrode to suppress early intrusion of the electrolytic solution. 5. The method of removing a metal thin film according to the third aspect of the patent application, wherein the member is placed on the insulating entry side of the metal flat electrode to suppress the intrusion of the electrolyte. The electrode of the method for removing the X film, which is the metal of the metal film connection of the electrode of the electrode of the 24 1274616 electrode, which is the metal of the metal film contact of the electrode of the 12 1274616 electrode. To wipe the surface of the thin metal. 7. The method for removing a metal thin film according to claim 4, wherein the metal flat electrode is made into a rotatable electrode, and the metal substrate is rubbed on the ground substrate provided at the metal film contact portion of the electrode. surface. 8. The method for removing a metal thin film according to claim 5, wherein the metal flat electrode is made into a rotatable electrode, and the metal substrate is rubbed on the ground substrate provided at the metal film contact portion of the electrode. surface. 9. The method for removing a metal thin film according to item 3 of the patent application, wherein the metal plate electrode is made into a rotatable electrode, and the metal substrate is rubbed by the abrasive substrate provided at the metal film contact portion of the electrode. Surface 0. 10. A metal film removing device, characterized in that it is composed of a metal plate electrode which is arranged in an inclined shape for guiding the flow of the electrolyte; and an auxiliary electrode which is located on the upstream side or the downstream side of the metal plate electrode. , a part of which is impregnated in the electrolyte; and a DC voltage source that applies a voltage to the two electrodes; 11. The apparatus for removing a metal thin film according to claim 10, wherein a bottom electrode is disposed below the two electrodes so as to be sandwiched between the metal plate electrode and the auxiliary electrode, and the bottom electrode is also applied by a DC voltage source. 1274616 The auxiliary electrode has a DC voltage of the same polarity. 12. The apparatus for removing a metal film according to the first or fourth aspect of the patent application is provided with a moving mechanism for causing at least one of the insulator impregnated in the electrolyte and the metal plate electrode to be relative to the other Do the move. 13. The metal film removing device of claim 10 or claim 3 is provided on the insulator entry side of the metal plate electrode to prevent the electrolyte intrusion member. 14. A metal film removing device according to claim 12, wherein the electrolyte intrusion member is provided on the insulating entry side of the metal plate electrode. 15. The apparatus for removing a metal thin film according to claim 10 or n wherein the metal plate electrode is made to be a rotatable electrode, and a polishing substrate is provided at the metal thin contact portion of the electrode, or A supply mechanism for the abrasive substrate is supplied to the metal film contact portion of the electrode. 16. The apparatus for removing a metal thin film according to claim 12, wherein the metal plate electrode is made to be a rotatable electrode, and a polishing substrate is provided at a contact portion of the metal film of the electrode, or a counter electrode is provided. The metal film contact portion supplies a supply mechanism for the polishing substrate. 17. The apparatus for removing a metal thin film according to claim 13 wherein the metal flat electrode is made of a rotatable electrode, and a polishing substrate is provided at a contact portion of the metal film of the electrode or a counter electrode is provided. The metal film contact portion supplies a supply mechanism for the polishing substrate. 18. The removal of the metal film according to claim 14 of the patent application, wherein the metal plate electrode is made into a rotatable electrode, and the polishing substrate is provided at the metal film contact portion of the electrode 26 1274616 or A supply mechanism that supplies a polishing substrate to the metal film contact portion of the electrode. Pick up, pattern: like the next page 27