TWI268576B - Method of manufacturing a semiconductor device - Google Patents

Method of manufacturing a semiconductor device

Info

Publication number
TWI268576B
TWI268576B TW091134323A TW91134323A TWI268576B TW I268576 B TWI268576 B TW I268576B TW 091134323 A TW091134323 A TW 091134323A TW 91134323 A TW91134323 A TW 91134323A TW I268576 B TWI268576 B TW I268576B
Authority
TW
Taiwan
Prior art keywords
crystalline surface
surface region
manufacturing
semiconductor body
semiconductor device
Prior art date
Application number
TW091134323A
Other languages
English (en)
Chinese (zh)
Other versions
TW200409293A (en
Inventor
Peter Adriaan Stolk
Original Assignee
Koninl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninl Philips Electronics Nv filed Critical Koninl Philips Electronics Nv
Publication of TW200409293A publication Critical patent/TW200409293A/zh
Application granted granted Critical
Publication of TWI268576B publication Critical patent/TWI268576B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
TW091134323A 2001-11-30 2002-11-26 Method of manufacturing a semiconductor device TWI268576B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01204625 2001-11-30

Publications (2)

Publication Number Publication Date
TW200409293A TW200409293A (en) 2004-06-01
TWI268576B true TWI268576B (en) 2006-12-11

Family

ID=8181336

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091134323A TWI268576B (en) 2001-11-30 2002-11-26 Method of manufacturing a semiconductor device

Country Status (7)

Country Link
US (1) US6982212B2 (OSRAM)
EP (1) EP1459366A2 (OSRAM)
JP (1) JP2005510871A (OSRAM)
KR (1) KR20040054811A (OSRAM)
AU (1) AU2002348835A1 (OSRAM)
TW (1) TWI268576B (OSRAM)
WO (1) WO2003046967A2 (OSRAM)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3737504B2 (ja) * 2004-03-31 2006-01-18 松下電器産業株式会社 半導体装置の製造方法
FR2870988B1 (fr) * 2004-06-01 2006-08-11 Michel Bruel Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation
JP2006066686A (ja) * 2004-08-27 2006-03-09 Matsushita Electric Ind Co Ltd 不純物導入方法および不純物導入装置
US7091097B1 (en) * 2004-09-03 2006-08-15 Advanced Micro Devices, Inc. End-of-range defect minimization in semiconductor device
US7615502B2 (en) * 2005-12-16 2009-11-10 Sandisk 3D Llc Laser anneal of vertically oriented semiconductor structures while maintaining a dopant profile
KR100732630B1 (ko) * 2006-02-01 2007-06-27 삼성전자주식회사 불순물 도핑 영역을 포함하는 반도체 소자 및 그 형성 방법
US20070221640A1 (en) * 2006-03-08 2007-09-27 Dean Jennings Apparatus for thermal processing structures formed on a substrate
KR101113533B1 (ko) * 2006-03-08 2012-02-29 어플라이드 머티어리얼스, 인코포레이티드 기판상에 형성되는 구조체의 열적 처리를 위한 장치 및 방법
US7759773B2 (en) * 2007-02-26 2010-07-20 International Business Machines Corporation Semiconductor wafer structure with balanced reflectance and absorption characteristics for rapid thermal anneal uniformity
US20090096066A1 (en) * 2007-10-10 2009-04-16 Anderson Brent A Structure and Method for Device-Specific Fill for Improved Anneal Uniformity
US7692275B2 (en) * 2007-02-26 2010-04-06 International Business Machines Corporation Structure and method for device-specific fill for improved anneal uniformity
US7745909B2 (en) * 2007-02-26 2010-06-29 International Business Machines Corporation Localized temperature control during rapid thermal anneal
US7679166B2 (en) * 2007-02-26 2010-03-16 International Business Machines Corporation Localized temperature control during rapid thermal anneal
US8138066B2 (en) 2008-10-01 2012-03-20 International Business Machines Corporation Dislocation engineering using a scanned laser
CN102421947B (zh) 2009-03-09 2016-09-28 1366科技公司 从已熔化材料制造薄半导体本体的方法和装置
GB201112610D0 (en) * 2011-07-22 2011-09-07 Rec Wafer Norway As Heating a furnace for the growth of semiconductor material
JP5910855B2 (ja) * 2011-12-19 2016-04-27 サンケン電気株式会社 半導体装置の製造方法
US9597744B2 (en) * 2013-11-11 2017-03-21 Siemens Energy, Inc. Method for utilizing a braze material with carbon structures
EP3252800A1 (en) * 2016-05-31 2017-12-06 Laser Systems & Solutions of Europe Deep junction electronic device and process for manufacturing thereof
DE102016114264B4 (de) * 2016-08-02 2024-10-24 Infineon Technologies Ag Herstellungsverfahren einschliesslich einer aktivierung von dotierstoffen
JP6655791B2 (ja) * 2016-08-25 2020-02-26 パナソニックＩｐマネジメント株式会社 太陽電池セル及びその製造方法
CN108807276A (zh) * 2017-05-05 2018-11-13 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN112885715A (zh) * 2021-01-08 2021-06-01 中国科学院微电子研究所 一种半导体器件的制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4535220A (en) * 1981-11-10 1985-08-13 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Integrated circuits
JPH01256124A (ja) * 1988-04-05 1989-10-12 Ricoh Co Ltd Ｍｏｓ型半導体装置の製造方法
US5950078A (en) * 1997-09-19 1999-09-07 Sharp Laboratories Of America, Inc. Rapid thermal annealing with absorptive layers for thin film transistors on transparent substrates
US5953615A (en) * 1999-01-27 1999-09-14 Advance Micro Devices Pre-amorphization process for source/drain junction
US6777317B2 (en) * 2001-08-29 2004-08-17 Ultratech Stepper, Inc. Method for semiconductor gate doping

Also Published As

Publication number Publication date
WO2003046967A3 (en) 2003-10-16
JP2005510871A (ja) 2005-04-21
WO2003046967A2 (en) 2003-06-05
US20050003638A1 (en) 2005-01-06
KR20040054811A (ko) 2004-06-25
TW200409293A (en) 2004-06-01
AU2002348835A1 (en) 2003-06-10
EP1459366A2 (en) 2004-09-22
US6982212B2 (en) 2006-01-03

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees