1267129 (1) 九、發明說明 【發明所屬之技術領域】 本發明關於具備：塗敷單元，用於對半導體晶圓表面 進行阻劑塗敷；及顯像單元，用於對表面形成液層施予液 浸曝光後之基板供給顯像液進行顯像的塗敷/顯像裝置， 以及對半導體晶圓進行液浸曝光的曝光裝置。 【先前技術】 習知半導體製造工程之一之光阻劑工程，係於半導體 晶圓（以下稱晶圓）表面塗敷阻劑，將該阻劑以特定圖案 曝光之後，顯像而形成阻劑圖案。此種處理通常使用在阻 劑之塗敷/顯像用的顯像裝置接續曝光裝置而成之系統予 以進行。 但是，近年來裝置圖案朝向更微細化、薄膜化之發展 。伴隨著提升曝光解像度之要求變爲更強烈。欲提升曝光 解像度可進行深紫外線曝光 （EUVL)、電子束投影曝光 (EPL)、或氟二聚物（F2)之曝光技術之開發，另一方面 針對既有光源例如ArF (氟化)或氟化氣（KrF)之曝光 技術欲加以改良而提升解像度時，在基板表面使光透過而 形成液相狀態下之曝光手法（以下稱液浸曝光）之檢討被 進行。半導體與製造業界基於財務上理由儘可能採取延長 ArF裝置之壽命，45nm之前使用ArF，EUVL僅爲備用之 見解者亦存在。液浸曝光利用例如於超純水之中使光透過 之技術，水中波長變短，193 nm之ArF之波長於水中實質 (2) (2)1267129 上成爲134nm之特徵。 以下使用圖1 4簡單說明進行該液浸曝光之曝光裝置 。於藉由保持機構（未圖示）保持於水平姿勢的晶圓 W 之上方，與晶圓W表面隔開間隙呈對向配置曝光手段1。 於上述曝光手段1之中央前端部，存在透鏡1 0，於該透鏡 1 〇外周側設置：供給口 η，用於供給例如純水之溶液而 於晶圓W表面形成液層，及吸引口 1 2，用於吸引、回收 供給至晶圓W之純水。此情況下，由上述供給口 1 1對晶圓 W表面供給純水之同時，藉由吸引口 1 2回收該純水，依此 而於透鏡1 〇與晶圓W表面之間形成液膜（純水膜）。由 光源（未圖示）發出光，該光通過透鏡10，透過該液膜照 射晶圓W而使特定電路圖案轉印至阻劑。 之後，例如圖15所示，於透鏡10與晶圓W表面之 間形成有液膜狀態下，橫向滑動、移動曝光手段1使該曝 光手段1配置於次一轉印區域（shot區域）13對應之位置 ，藉由重複照射光之動作，依序使特定電路圖案轉印至晶 圓W表面。又，轉印區域1 3標記爲較實際大。 上述液浸曝光之一問題爲，阻劑將溶出於液膜側，該 溶出成份有可能殘留於晶圓W上。特別是曝光結束後， 晶圓W表面形成之液膜雖由晶圓W周緣進行排出，但， 晶圓 W周緣部成爲斜面 （bevel)構造’因此上述溶出成 份有可能不掉落而殘留於晶圓W周緣部之傾斜面。 又，液膜形成於晶圓W表面後，液膜或液滴具有容 易吸著微塵 （particle)之性質，和通常之曝光處理比較 (3) (3)1267129 ，液浸曝光後之晶圓W附著微塵之機率變高。如上述說 明，液浸曝光使用之液膜成爲液滴附著於晶圓W周緣部 之斜面殘留時，微塵將被吸著於此。 因此，於液浸曝光後之晶圓W，特別是在周緣部附著 微塵之可能性變高，因而晶圓W回至塗敷/顯像裝置側時 例如附著於搬送臂，而飛散至處理單元內，或轉印至其他 晶圓 W，成爲發生微塵污染之主要原因。另外，晶圓 W 表面附著微塵時，加熱處理時微塵附著之部位溫度和其他 部位之溫度不同，特別是對於化學放大型阻劑曝光時發生 之酸觸媒擴散至阻劑內之加熱處理時，微塵附著將影響圖 案之線寬。另外，顯像處理時，晶圓W上附著之微塵將 損及圖案。 又，亦有於液浸曝光前將疏水性保護膜塗敷於晶圓W 表面，形成此種保護膜之理由在於使液浸曝光時之液體被 彈開，使其難以殘留晶圓W表面。此情況下，較好是於該 周緣部背面側亦塗敷保護膜，以避免液滴進入晶圓W周 緣部背面側而附著。但是該部位之保護膜容易剝離，液浸 曝光後晶圓W搬送至處理部時，成爲微塵污染之主要原 因之一。 上述說明之液浸曝光存在微塵附著特有之問題。欲解 決該問題，可於液浸曝光後，藉由洗淨單元進行晶圓 W 之洗淨以有效除去微塵。此情況下，在塗敷單元或顯像單 元被配置之稱爲製程區塊的處理區塊，藉可能增多本來之 處理單元之配置數目以提升稼動效率，因此在作爲製程區 -6 - (4) 1267129 塊與曝光裝置之橋樑的介面區塊配置該 之對策。 但是，作爲晶圓W之洗淨單元， 合於塗敷單元或顯像單元，將洗淨液供 央部使晶圓W旋轉之後進行吹乾之所謂 但是，此種乾燥裝置爲求回收洗淨 晶圓W之載置台下方側全周配置形成 外，欲使飛散之洗淨液確實捕捉於杯體 時，將導致洗淨單元之更大型化。因此 配置於處理區塊需要極大之空間，現實 上述介面區塊亦須儘可能省空間化，因 種大型之洗淨單元的設計。 另外，專利文獻1揭示將洗淨液由 方噴出流動於晶圓上之後，藉由晶圓中 引裝置同時洗引洗淨液而乾燥之裝置。 洗淨液乃由晶圓端部流下掉落，因而需 上部側開口的杯體，該杯體將妨礙裝置, 專利文獻1 :特開2 0 0 4 - 9 5 7 0 8號公 第12頁及第20頁） 【發明內容】 (發明所欲解決之課題） 本發明有鑑於上述問題，目的在於 造進行液浸曝光後附著於晶圓之微塵之 洗淨單元乃可考慮 周知者通常爲被組 給至晶圓W之中 旋轉洗淨。 液，須於載置上述 有凹部的杯體。另 內而設置吸引裝置 ，將此種洗淨單元 上有困難。又，於 此難以採用配置此 晶圓兩端部附近上 央部上方設置之吸 但是，此種裝置， 要包圍晶圓地設置 之小型化。 報（第8〜9頁， 提供，可以簡單構 除去（包含液浸曝 (5) 1267129 光之液體彈開用疏水性保護膜之除去），可以滿足液浸曝 光所產生之微塵之除去（包含晶圓周緣部背面側形成之保 護膜之除去）要求之同時，可以達成塗敷/顯像裝置或曝光 裝置之省空間化的技術。 (用以解決課題的手段） 本發明之塗敷/顯像裝置，係具備：塗敷單元，用於 φ 對半導體晶圓表面塗敷阻劑；及顯像單元，用於對表面形 成液層被施予液浸曝光後之半導體晶圓供給顯像液以進行 顯像；其特徵爲： ^ 具備：洗淨單元，用於洗淨被施予液浸曝光後之半導 . 體晶圓之周緣部； 上述洗淨單元具備： 晶圓保持部，用於使被施予液浸曝光後之半導體晶圓 保持水平； # 旋轉機構，用於使該晶圓保持部於垂直軸周圍旋轉； 口字型部，包圍上述晶圓保持部保持之半導體晶圓之 周緣部而被形成； 上側噴嘴部與下側噴嘴部，用於由該〕字型部之上面 部與下面部之內側對半導體晶圓之兩面周緣部分別噴出洗 淨液； 洗淨液供給部，用於對彼等上側噴嘴部與下側噴嘴部 供給洗淨液； 吸引口，設於上述字型部之側面部，用於吸引上述 -8 - (6) (6)1267129 上側噴嘴部與下側噴嘴部之各個所噴出之洗淨液；及 移動機構，用於使上述〕字型部在包圍半導體晶圓周 緣部之洗淨位置與由該洗淨位置退避的退避位置之間移動 〇 於上述塗敷/顯像裝置中，上述洗淨液供給部構成爲 可切換、供給互異之第1洗淨液與第2洗淨液，例如於半 導體晶圓表面與背面周緣部，在進行液浸曝光之前被形成 疏水性保護膜時，可使用第1洗淨液與第2洗淨液除去該 保護膜。其中，第1洗淨液爲除去上述保護膜用之藥液， 第2洗淨液爲洗淨該藥液用之洗淨液。 又，上側噴嘴部與下側噴嘴部具備，由半導體晶圓之 周緣起之距離爲互異，各個可被選擇而噴出洗淨液的多數 洗淨液噴出口。該多數洗淨液噴出口，係形成於半導體晶 圓中不同直徑上。 又，上述塗敷/顯像裝置具備：天井板部，自π字型部 之上面部至至少半導體晶圓中心部而延伸；及乾燥氣體供 給部，用於由該天井板部側對半導體晶圓表面供給乾燥氣 體。 又，於上述塗敷/顯像裝置中，上述3字型部，係於半 導體晶圓之直徑方向互呈對向設置，此情況下，具備：天 井板部，設置成爲連結互呈對向之一對〕字型部之上面部 彼此之間；及乾燥氣體供給部，用於由該天井板部側對半 導體晶圓表面供給乾燥氣體。 又，於上述塗敷/顯像裝置中，具備：處理區塊，包 -9- (7) (7)1267129 含上述塗敷單元與顯像單元；及介面區塊 （interface block)，介於該處理區塊與對半導體晶圓進行液浸曝光 之曝光機之間；上述洗淨單元設於介面區塊。 又，上述天井板部，相對於口字型部之上面部設置成 裝卸自如，設置升降機構，用於使該天井板部對洗淨位置 之某一〕字型部升降亦可。 又，本發明，係於塗敷有阻劑之半導體晶圓表面形成 液層進行液浸曝光的曝光裝置中，設置上述洗淨單元亦可 〇 又，本發明之阻劑圖案形成方法，係於半導體晶圓表 面塗敷阻劑之後，於該半導體晶圓表面形成液層進行液浸 曝光，之後，對晶圓表面供給顯像液進行顯像者；其特徵 爲 · 具備洗淨工程，用於對半導體晶圓進行液浸曝光後， 進行顯像之前進行洗淨； 上述洗淨工程包含以下工程： 保持工程，用於使半導體晶圓以水平姿勢保持於晶圓 保持部； 之後使申請專利範圍第1項之〕字型部位於，包圍上 述晶圓保持部所保持半導體晶圓之周緣部的相對位置之步 驟； 之後，自設於該字型部之上側洗淨液噴出口與下側 洗淨液噴出口，對半導體晶圓之兩面周緣部分別噴出洗淨 液，並由設於上述Π字型部側面部之吸引口吸引洗淨液的 -10- (8) 1267129 步驟；及 爲於半導體晶圓全周進行周緣部之洗淨而使上述晶圓 保持部旋轉的步驟。 又，於上述阻劑圖案形成方法中，於上述半導體晶圓 表面與背面周緣部，例如在進行液浸曝光之前形成疏水性 保護膜時，自上述上側洗淨液噴出口與下側洗淨液噴出口 噴出洗淨液之工程，係包含：對半導體晶圓兩面周緣部噴 φ 出藥液而除去保護膜的工程；及接著、對半導體晶圓兩面 周緣部噴出洗淨液而除去藥液的工程。 又，噴出洗淨液而除去上述藥液的工程，係由上側洗 • 淨液噴出口與下側洗淨液噴出口，對較藥液之噴出位置更 . 靠近半導體晶圓中央之位置噴出洗淨液的工程。洗淨半導 體晶圓兩面周緣部之後，由自〕字型部上面部至至少半導 , 體晶圓中心部而延伸之天井板部，進行對半導體晶圓表面 供給乾燥氣體的工程。 【實施方式】 參照圖1-3說明本發明實施形態之塗敷/顯像裝置連接 * 曝光裝置之系統全體構成。圖中B1爲托盤載置台，用於 搬出/搬入密閉收納例如13片基板（晶圓W)的托盤2， 設有··托盤平台20，具備載置部20a可載置多數並類之托 盤2 ;開/關部21，由該托盤平台20觀察時設於前方壁面 ;及收/送手段A1，用於介由上述開/關部21由托盤2取 出晶圓W。 -11 - (9) 1267129 於上述托盤載置台B 1之深部側，連接以框體22包圍 周圍之處理部B 2，於該處理部B 2由前面側依序交互配列 設置：使加熱/冷卻系單元多段化而成之置物單元U 1、U2 、U 3，與液處理單元U 4、U 5之各單元間之晶圓w之進行 收/送的主搬送手段A2、A3。亦即，置物單元Ul、U2、 U3與主搬送手段A2、A3由托盤載置台B1側看時配列成 前後一列，於各個連接部位形成晶圓搬送用開口部（未圖 • 示），晶圓W可於處理部B2內自一端側之置物單元U1 至另一端側置物單元U3自由移動。又，主搬送手段A2、 A3被置放於，由托盤載置台B 1側看成爲前後一列配列之 • 置物單元Ul、U2、U3側之一面部，與後述籽例如右側之 • 液處理單元U4、U5之一面部，與構成左側之一面的背面 部所構成之間隔壁2 3包圍之空間內。又，圖中2 4爲溫溼 度調節單元，具備各單元使用處理液之溫度調節裝置或溫 溼度調節用之導管等。 ® 上述置物單元Ul、U2、U3，係將液處理單元U4、U5 進行之處理的前處理與後處理之各種單元多段（例如1 0 段）積層而構成，其組合包含加熱晶圓 W之加熱單元） PAB)(未圖示），及冷卻晶圓W的冷卻單元等。又，如 圖2所示，液處理單元U4、U5之構成，係在阻劑或顯像 液等之藥液收納部上，將抗反射膜塗敷單元（BARC) 26、 阻劑塗敷單元（COT) 27、對晶圓W供給顯像液施予顯像 處理的顯像單元（DEV) 28等予以多段（例如5段）積層 而成。又，於上述阻劑塗敷單元27，例如於晶圓w表面 -12- (10) (10)1267129 塗敷阻劑，之後於其上形成疏水性保護膜。 於處理部B2之置物單元U3之深部側，介由介面部 (介面區塊）B3連接曝光部B4。如圖3所示，該介面部B3 ，係由以前後設於處理部B2與曝光部B4之間的第1搬送 室3 A與第2搬送室3 B構成，分別設置第1晶圓搬送部 3 1與第2晶圓搬送部3 2。於第1晶圓搬送部3 1與第2晶 圓搬送部32分別具備升降自如、可於垂直軸周圍自由旋 轉、且自由進退的搬送臂31A與搬送臂32A。 又，於第1搬送室3 A，在挾持第1晶圓搬送部3 1由 托盤載置台B1側看到之右側，收/送單元（TRS3) 37、各 具有例如冷卻板的2個高精確度溫調單元 （CPL2) 39、及 對液浸曝光後之晶圓W施予後段曝光烘乾（PEB)處理的 加熱/冷卻單元 （PEB) 38例如於上下積層被設置。另外， 於左側，暫時收納多數（例如1 3片）晶圓W之2個緩衝 卡匣（SBU) 34、35，於上下連續被設置。 於第2搬送室3B內，由托盤載置台B1側看，在中央 部之更左側設置和洗淨單元相關之晶圓保持部4 1。晶圓保 持部41，係於第2搬送室3B內之下部設置的包含旋轉機 構的驅動機構4 2，介由垂直方向站立之周部被設置。又， 晶圓保持部4 1，係由吸引、吸著晶圓背面中央部之真空夾 頭構成，在以驅動機構42保持晶圓W之狀態下，可於垂 直軸周圍旋轉。該晶圓保持部4 1兼作爲收/送平台，可自 曝光部B4側之搬送臂4A對塗敷/顯像裝置側之搬送臂 32A收/送晶圓W。 -13- (11) 1267129 由托盤載置台B 1側看，在晶圓保持部4 1更左方向（ 圖3之Y方向），於洗淨單元兩側設置具備〕字型部4、 4〇之噴嘴單元100 ◦該噴嘴單元100構成爲可於圖3之Y 方向水平移動，而可以水平姿勢朝向晶圓保持部4 1。又’ 曝光部B4側之搬送臂4A構成爲可升降自如、可於垂直軸 周圔旋轉自如、且進退自如。 依圖4-8說明上述洗淨單元。噴嘴單元1〇〇，係於天 井板部43兩側具備同一構造之〕字型部4、4。彼等2字 型部4、4形成爲包圍晶圓保持部41保持之晶圓W周緣 部之同時，於晶圓W之直徑方向互呈對向設置。於口字型 部4、4上面部設置上側噴嘴部5 0，可對晶圓W周緣部表 面噴出洗淨液。於=字型部4、4下面部設置下側噴嘴部 60，可對晶圓W周緣部背面噴出洗淨液。 上側噴嘴部50與下側噴嘴部60，均爲具有多數（例 如6個）洗淨液噴出口，互爲上下對向之同一佈局。依圖 6說明上側噴嘴部5 0之構成，上側噴嘴部5 0，具備多數 洗淨液噴出口，此例係於虛線a、b、c上2個構成1組之 合計 6個洗淨液噴出口 （50a、50a) 、 （50b、50b)、 (50c、50c)。各組洗淨液噴出口 （50a、50a) 、 （50b、 5〇b) 、 （50c、50c)依序位於和晶圓W周緣分離之位置 。各洗淨液噴出口 （50a、50a) 、 （50b、50b) 、 (50c 、5 0c)相對於晶圓W之直徑以左右兩側對稱配置，越是 和晶圓W周緣分離之組的洗淨液噴出口，構成該組之2 個洗淨液噴出口之相互分離距離越大。槪略言之爲，沿著 -14- (12) (12)1267129 較晶圓 W小徑之圓，各組洗淨液噴出口 （50a、50a)、 (50b、50b) 、 （50c、50c)分別以左右對稱配置。關於π 字型部4下面部之下側噴嘴部60亦同樣配置3組洗淨液 噴出口 （60a、 60a) 、 （60b、 60b) 、 （60c、 60c) (參 照圖5)，於另一 π字型部4同樣配置兩噴嘴部50、60。 又，如圖8所示，洗淨液噴出口 （50a、50a) 、 （50b、 50b) 、 （50c、50c)介由洗淨液供給管 51a、51b、51c 連接於洗淨液供給部84，於洗淨液供給管51a、5 1b、5 1c 分別設置閥V3、V4、V5。又，洗淨液噴出口 （60a、60a) 、（60b、60b) 、 （60c、60c)介由洗淨液供給管61a、 6 1 b、6 1 c連接於洗淨液供給部84，於洗淨液供給管6 1 a、 61b、61c分別設置閥V6、V7、V8。洗淨液供給部84由 :第1洗淨液供給源8 5，可供給藥液用於除去第1洗淨液 之例如含氟溶液構成之疏水性保護膜；第2洗淨液供給源 86，可供給例如純水等之洗淨液用於洗淨該藥液；及例如 三方閥V9，構成切換第1洗淨液供給源85與第2洗淨液 供給源86之切換手段。 於上述π字型部4、4之側面部，設置吸引口 44可吸 引上側噴嘴部50與下側噴嘴部60噴出之洗淨液。吸引口 44爲朝向晶圓W變大之橫向擴徑之構成，可以有效吸引 晶圓W周緣部塗敷之洗淨液。又，爲提升吸引能力，於^ 字型部4、4側面部，例如設置多數吸引口，於各吸引口 分別設置吸引管之構成亦可。又，如圖8所示，於吸引口 44連接吸引管82，藉由吸引管82連接吸引手段83 (例如 -15- (13) (13)1267129 泵）亦可。又，於吸引管82設有閥V2。 於天井板部4 3側具備乾燥氣體供給部4 5，乾燥氣體 供給部45，係由以下構成：乾燥氣體供給口 46，設置於 天井板部4 3中央、可對晶圓W表面供給乾燥氣體；連通 乾燥氣體供給口 46的空間部47 ;多孔質部構件48，設於 空間部47之下、可以高均勻性對晶圓W表面供給乾燥氣 體；及板5 2，設於多孔質部構件4 8之下、由設有多數孔 4 9的例如鋁構成。於乾燥氣體供給部4 5，空間部4 7、多 孔質部構件48及板52係於晶圓之直徑方向形成爲較天井 板部43稍窄幅之帶狀’可對晶圓W之直徑方向均勻吹出 乾燥氣體。又，如圖8所示，於乾燥氣體供給口 4 6連接 氣體供給管8 0，介由該氣體供給管8 0連接乾燥氣體供給 源8 1。又，於氣體供給管8 0設有閥V1。 又，沿著天井板部43之長邊方向兩側面設置導引構 件53，該導引構件53可將乾燥氣體供給部45供給之乾燥 氣體導引至：2字型部4、4側面部之內側。 於天井板部43，連接3字狀支撐體70之端部，該支 撐體70構成爲，藉由例如包含移動體71、球形螺旋部72 及導軌73等之移動機構74，可於圖4之X軸方向移動。 藉由移動機構74可使上述噴嘴單元1〇〇移動於，包圍晶 圓W周緣部之洗淨位置與由該洗淨位置退避之退避位置 之間。所謂洗淨位置係指，在π字型部4、4之空洞部使 晶圓W周緣部介由空間插入之位置。此時，π字型部4、 4上設置之上側噴嘴部5 0與及下側噴嘴部60，如圖6所 -16- (14) (14)1267129 示位於晶圓W周緣部。 以下，依圖9-1 1說明上述實施形態之作用。該晶圓 W被阻劑塗敷單元27塗敷阻劑，再於其上形成疏水性保 護膜後，於曝光部B4進行液浸曝光。本例中說明處理之 晶圓W，係由晶圓W表面全體介由側端面形成有背面跨 越周緣部之疏水性保護膜，但是，亦可適用僅於周緣部形 成疏水性保護膜之晶圓W。首先，藉由曝光部B4側之搬 送臂4 A將液浸曝光後之晶圓W載置於晶圓保持部4 1之 上。該晶圓W被水平保持於晶圓保持部41 (S1)。接著 ，藉由移動機構74使上述噴嘴單元100由退避位置移動 至洗淨位置。亦即，移動至π字型部4、4之空洞部使晶 圓 W周緣部介由空間插入之位置 （S2)。於該洗淨位置 ，：^字型部4、4成爲包圍晶圓W周緣部之狀態，如圖6 所示π字型部4、4上設置之上側噴嘴部50與及下側噴嘴 部60分別成爲和晶圓W周緣部之表面及背面呈對向。由 上側噴嘴部5 0與下側噴嘴部60對晶圓W表面及背面側 噴出第1洗淨液之含氟溶液所構成疏水性保護膜除去用之 藥液，使π字型部4、4之側面部之吸引口 44設爲吸引狀 態（S3)。之後，藉由三方閥V9切換第1洗淨液爲第2 洗淨液，對晶圓W表面及背面側噴出第2洗淨液之純水 之同時，使口字型部4、4之側面部之吸引口 44設爲吸引狀 態（S4)。又，吸引開始之時序設爲和第1洗淨液之供給 大略同時或稍前，藉由三方閥V9切換第1洗淨液爲第2 洗淨液時上述吸引口 44亦設爲吸引狀態較好。 -17- (15) (15)1267129 以下依圖1 〇詳細說明步驟2及3之模樣。於圖1 〇， 例如於1 2英吋之晶圓W表面被塗敷阻劑膜R，上述阻劑 膜R之塗敷區域，被形成爲較晶圓W之圓周部更內側， 具體言之爲，於晶圓W表面塗敷阻劑膜R，使晶圓W外緣 部至阻劑膜R之外緣部之距離例如成爲1 .5mm。保護膜Η ，則自晶圓W表面全體跨越晶圓W側端部繞進入晶圓W 背面側被形成。晶圓W背面側之保護膜Η，係自晶圓W外 緣部朝向中央部被形成例如約5mm。 於上述形成之晶圓 W，上述洗淨液噴出口 （50a、 5 0 a)相對阻劑膜R之外緣部大略位於垂直上方向，洗淨 液噴出口 （60 b、60b)相對保護膜Η之外緣部大略位於垂 直下方向。於彼等位置，打開閥V3及閥V7，自3組洗淨 液噴出口之中最外側之洗淨液噴出口 （50a、50a)及3組 洗淨液噴出口之中位於中間之洗淨液噴出口 （60b、60b) ，將第1洗淨液之含氟溶液所構成疏水性保護膜除去用之 藥液，分爺噴出至晶圓W表面及背面側（參照圖10 (a)) 。此時，由〕字型部4、4之側面部之吸引口 44進行吸引 ，因此，噴著於晶圓W表面及背面側之藥液及被該藥液 剝離之保護膜Η，可藉由π字型部4、4內形成之吸引流而 隨時由吸引口 44被吸引、排出（參照圖1〇 (b))。自晶 圓W外緣部至阻劑膜R外緣部爲止形成之保護膜Η，晶 圓W側端不形成之保護膜Η，及晶圓W背面側形成之保 護膜Η被除去後，於3字型部4、4，自較洗淨液噴出口 (50a、50a)及洗淨液噴出口 （60b、60b)設於更內側 （ -18- (16) 1267129 靠晶圓 W之中央部）之洗淨液噴出口 （50b、50b)及洗 淨液噴出口 （60c、60〇 ，將第2洗淨液之純水分別噴著 於晶圓W表面及背面側。同樣地，此時，由J字型部4、 4之側面部之吸引口 44進行吸引，因此，噴著於晶圓W ^ 表面及背面側之純水，可藉由〕字型部4、4內形成之吸 引流而隨時由吸引口 44被吸引、排出（參照圖10 (〇 ) 〇 # 之後，藉由乾燥氣體乾燥晶圓W表面，被均勻噴著 於晶圓W表面之乾燥氣體，因爲〕字型部4、4之側面部 之吸引口 44處於吸引狀態而朝向晶圓W外周緣流動，由 - 吸引口 45被吸引排氣（S5)。經過特定時間乾燥晶圓W . 表面後，藉由驅動機構42使晶圓保持部4 1僅旋轉和上述 洗淨液噴出口之移動區域對應之晶圓W之中心角Θ，於該 位置進行洗淨與乾燥（S3-S5)。之後，使晶圓W依序旋 轉角度Θ而於各位置進行洗淨與乾燥 （S3-S5) (S6)。於 • 最後之角度位置之乾燥結束後，藉由移動機構74使噴嘴 單元1〇〇由洗淨位置移動至退避位置（S7)，藉由第2搬 送室3B側之搬送臂32A受取晶圓保持部41上載置之晶圓 * W，將該晶圓W搬送至介面部3A。 依上述實施形態，液浸曝光後洗淨晶圓W周緣部， 液浸曝光後於晶圓W周緣部雖容易殘留液滴而成爲附著 微塵之狀態，但是藉由洗淨晶圓W周緣部可防止液浸曝 光後之工程之微塵污染。藉由包圍晶圓W而形成之口字型 部4、4挾持晶圓W周緣部，由字型部4、4上設置之上 -19- (17) (17)1267129 側噴嘴部50與下側噴嘴部60對晶圓W周緣部噴出洗淨 液之同時，由〕字型部4、4之側面部之吸引口 44進行吸引 ，因此，洗淨液不會由晶圓W表面及π字型部4、4灑落 ，亦即不必於晶圓保持部4 1周圍設置回收洗淨液之杯體 ，可實現洗淨單元之省空間化，結果可避免塗敷/顯像裝 置之大型化。 又，藉由三方閥V9切換第1洗淨液與第2洗淨液， 且藉由閥V3-V8分別選擇由洗淨液噴出口 （50a、50a)、 (50b、 50b) 、 （50c、 50c)及（60a、 60a) 、 （60b、 60b) 、 （60c、60c)噴出之洗淨液，因此，例如於晶圓 W形成疏水性保護膜Η時，可由選擇之1組洗淨液噴出口 噴出除去該保護膜Η之藥液，之後，由較先前選擇之1組 洗淨液噴出口更內側（靠近晶圓W之中心側）之1組洗 淨液噴出口噴出洗淨該藥液之洗淨液，可進行該藥液及被 該藥液剝離之剝離物之洗淨，可進行極細緻之洗淨，特別 是可除去晶圓W周緣部之保護膜Η，可確實防止微塵污染 〇 如上述說明，具備由晶圓W周緣起之距離互異’各 個可被選擇噴出洗淨液之多數洗淨液噴出口之構成，因此 可進行自由度大之洗淨。例如，於上述實施形態亦可選擇 保護膜Η之除去寬度。 又，於晶圓W未形成保護膜Η時’例如由選擇之1 組洗淨液噴出口噴出阻劑膜R之溶解性生成物等異物除去 專用之藥液，之後，由較先前選擇之1組洗淨液噴出口更 -20- (18) 1267129 內側（靠近晶圓W之中心側）之1組洗淨液噴出口噴出 純水等，可進行極細緻之洗淨，可確實防止微塵污染。 又，由π字型部4、4上面部設置之天井板部43對晶 圓W表面供給乾燥氣體，則於液浸時例如在晶圓W表面 f 附著液滴情況下亦可乾燥晶圓W表面。另外，晶圓W周 緣部亦可藉由洗淨液確實除去。可乾燥晶圓W，因此，之 後，搬送晶圓W之搬送臂32A上不會附著液滴。 # 圖1 2、1 3表示本發明之另一實施形態，於此例，天 井板部43構成爲藉由升降機構53可以在洗淨位置之n/字 型部4、4上面部裝卸自如。上述天井板部43形成爲大略 • 圓形狀，天井板部43之外緣部分別密接於3字型部4、4 . 之一端側上形成之大略圓形狀段部54。又，π字型部4、 4互呈對向，分別藉由移動機構74可於水平移動。又，於 圖12、13，和上述噴嘴單元100相同構成之部分附加同一 符號。於該構成，例如使晶圓W依序旋轉角度Θ於各位 • 置進行之處理爲，僅設爲晶圓W周緣部之洗淨 （S3-S4) ，於最後之角度位置洗淨（S3-S4)之後，由天井板部43 之乾燥氣體供給部4 5對晶圓W表面全體供給乾燥氣體。 "亦即，在晶圓W周緣部藉由口字型部4、4之吸引口 44之 吸引使乾燥，於該吸引口 44具有之乾燥區域之更內側， 藉由天井板部43側之乾燥氣體乾燥之手法。 又，欲藉由天井板部43側之乾燥氣體乾燥晶圓W全 表面區域時，可將天井板部43設爲覆蓋晶圓W表面全體 之大小。此情況下，晶圓W周緣部將進入〕字型部4、4內 -21 - (19) 1267129 ’天井板部43之乾燥氣體之噴出區域和晶圓 大小時，天井板部43成爲，在π字型部4、4 17字型部4、4之形狀，亦即成爲天井板部43 4、4之上面部左右延伸出之形狀。 又，不設置大略圓形狀之天井板部43，藉 之〕字型部4、4洗淨晶圓W周緣部 （S3-S4) °此情況下，另外設置乾燥晶圓W表面之裝置 乾燥氣體之簡單單元，於此進行乾燥處理亦可 (發明效果） 依本發明，構成爲在液浸曝光後洗淨晶圓 胃曝光後晶圓周緣部成爲容易殘留液滴、附著 ’但是藉由洗淨晶圓周緣部可防止液浸曝光後 麈污染。又，藉由包圍晶圓W而形成之字型 周緣部，自該口字型部之上側噴嘴部與下側噴 周緣部噴出洗淨液之同時，由上述〕字型部側面 進行吸引，因此，洗淨液不會由晶圓表面與π 。因而，於晶圓保持部周圍不必設置回收洗淨 可達成洗淨單元之省空間化，結果，可避免！ 置之大型化。 另外，可噴出不同之洗淨液，因此，於晶 性保護膜時，可噴出除去該保護膜用之藥液， 純水等施予洗淨，或噴出阻劑之溶解生成物等 去用專用藥液之後以純水等洗淨，可進行極爲 W大略相同 之部位迴避 由〕字型部 由互呈對向 之構成亦可 之例如噴出 周緣部，液 微塵之狀態 之工程之微 部挾持晶圓 嘴部對晶圓 部之吸引口 字型部灑落 液之杯體， !敷/顯像裝 圓形成疏水 接著、藉由 之異物之除 細緻之洗淨 -22- (20) 1267129 ，更能確實防止微塵污染。 另外，構成爲具備，由半導體晶圓之周緣起之距離爲 互異、各個可被選擇而噴出洗淨液的多數洗淨液噴出口， 因此可進行自由度高之洗淨。例如，可調整上述保護膜之 ^ 除去寬度，又，可於晶圓周緣部噴出藥液後，自較該噴出 位置更內側（靠近晶圓中央部）之位置噴洗藥液，因此可 以確實除去藥液或該藥液溶解之成份。 # 又，自設於π字型部上面部側之天井板部對晶圓表面 供給乾燥氣體，依此則可乾燥洗淨後之晶圓，液滴不會附 者於之後搬送晶圓的搬送臂。 圖 圖 圖 說本 單爲 簡 1 式圖 圖 圖圖 圖 圖圖圖 2 本 爲 1明發 明發 態肜 形施 施 Ϊ 之 態 視 。 斜 圖體 面全 平之 之置 置裝 裝像 像顯 顯 / Λ 敷 敷塗 塗之 述 上 爲 4 組 爲 顯述 ^/上 敷於 塗裝 裝 像 敷 塗 視 斜 之 。 元 圖單 視嘴 斜噴 之之 部置 面裝 介像 之顯 置 圖 面 斷 之 斷 。 切 圖向 面方 斷-Υ 縱Υ 之於 元元 單單 嘴嘴 噴 噴 述述 上上 爲爲 5 6 7 8 明 說 。 之 圖系 面給 斷供 之種 斷各 切(¾ 向引 方吸 Z 之 Z-接 於連 元元 單單 灣嘴 DtB(噴 述述 上上 爲爲 圖 明 說 程 流 之 圓 晶 淨 洗 元 單 嘴 噴 述 上 用 使 爲 9 圖 -23· (21) (21)1267129 圖l 〇爲使用上述噴嘴單元洗淨晶圓之模式說明圖。 圖11爲使用上述噴嘴單元乾燥晶圓之模式說明圖。 圖12爲組裝於上述塗敷/顯像裝置之另一噴嘴單元之 斜視圖。 圖13爲圖12之噴嘴單元之一部分斷面圖。 圖1 4爲對晶圓施予液浸曝光之曝光手段之說明圖。 圖15爲藉由上述曝光手段對晶圓表面施予液浸曝光 之模式說明圖。 【主要元件符號說明】 W、晶圓；4、π字型部；41、晶圓保持部；42、驅動 機橇；43、天井板部；44、吸引口； 45、乾燥氣體供給部 ;46、乾燥氣體供給口； 47、空間部·，48、多孔質部構件 ;49、孔；50、上側噴嘴部；52、板；53、導引部；54、 段部；60、下側噴嘴部；81、氣體供給源；82、吸引管； 83、吸引手段；84、洗淨液供給部；85、第1洗淨液供給 部；8 6、第2洗淨液供給部；1 〇 0、噴嘴單元；V 1〜V 8、 閥；V9、三方閥。 -24-1267129 (1) Inventive Description [Technical Field] The present invention relates to a coating unit for performing resist coating on a surface of a semiconductor wafer, and a developing unit for forming a liquid layer on the surface A coating/developing device that supplies a developing solution to a developing solution after immersion exposure, and an exposure device that performs liquid immersion exposure on the semiconductor wafer. [Prior Art] A photoresist process in one of the conventional semiconductor manufacturing processes is to apply a resist on the surface of a semiconductor wafer (hereinafter referred to as a wafer), and after exposing the resist in a specific pattern, developing a resist to form a resist. pattern. Such a treatment is usually carried out using a system in which a developing device for coating/developing a resist is connected to an exposure device. However, in recent years, the device pattern has progressed toward finer and thinner. The requirement to increase the exposure resolution becomes stronger. To improve exposure resolution, development of exposure techniques for deep ultraviolet exposure (EUVL), electron beam projection exposure (EPL), or fluorodimer (F2), and on the other hand for existing sources such as ArF (fluorinated) or fluorine When the exposure technique of the chemical gas (KrF) is to be improved to improve the resolution, a review of the exposure method (hereinafter referred to as immersion exposure) in which the light is transmitted through the surface of the substrate to form a liquid phase is performed. The semiconductor and manufacturing industries have taken the long-term use of ArF devices for financial reasons, using ArF before 45nm, and EUVL is only a backup. The immersion exposure utilizes, for example, a technique of transmitting light in ultrapure water, and the wavelength in water is shortened. The wavelength of ArF at 193 nm is characteristic of 134 nm in water (2) (2) 1267129. The exposure apparatus for performing the immersion exposure will be briefly described below using FIG. The exposure means 1 is disposed opposite to the surface of the wafer W by a holding mechanism (not shown) held above the wafer W in a horizontal posture. A lens 10 is present at a central end portion of the exposure means 1, and a supply port η is provided on the outer peripheral side of the lens 1 to supply a solution such as pure water to form a liquid layer on the surface of the wafer W, and a suction port 1 2. It is used to attract and recycle pure water supplied to the wafer W. In this case, pure water is supplied to the surface of the wafer W by the supply port 11, and the pure water is recovered by the suction port 12, thereby forming a liquid film between the lens 1 and the surface of the wafer W ( Pure water film). Light is emitted from a light source (not shown) which passes through the lens 10 and transmits the wafer W through the liquid film to transfer a specific circuit pattern to the resist. Thereafter, for example, as shown in FIG. 15, in the state in which the liquid film is formed between the lens 10 and the surface of the wafer W, the lateral sliding and moving exposure means 1 arrange the exposure means 1 in the next transfer region (shot area) 13 At the position, the specific circuit pattern is sequentially transferred to the surface of the wafer W by repeating the action of irradiating light. Further, the transfer area 13 is marked to be larger than the actual one. One of the problems with the above immersion exposure is that the resist will dissolve on the liquid film side, and the eluted component may remain on the wafer W. In particular, after the exposure is completed, the liquid film formed on the surface of the wafer W is discharged from the periphery of the wafer W. However, the peripheral portion of the wafer W has a bevel structure. Therefore, the eluted component may remain in the crystal without falling. The inclined surface of the circumference of the circle W. Moreover, after the liquid film is formed on the surface of the wafer W, the liquid film or liquid droplet has the property of easily attracting particles, and is compared with the usual exposure treatment. (3) (3) 1267129, the wafer W after the immersion exposure The probability of attaching dust is high. As described above, when the liquid film used for the liquid immersion exposure is left on the slope of the peripheral portion of the wafer W, the fine dust is absorbed therein. Therefore, the wafer W after the immersion exposure has a high possibility of attaching fine dust to the peripheral portion. Therefore, when the wafer W is returned to the coating/developing device side, for example, it adheres to the transfer arm and is scattered to the processing unit. Internal or transfer to other wafers W is the main cause of dust pollution. In addition, when the surface of the wafer W is attached with fine dust, the temperature at the portion where the fine dust adheres during the heat treatment is different from the temperature at other portions, particularly when the acid catalyst generated during the exposure of the chemical amplification resist is diffused into the heat treatment in the resist. Dust adhesion will affect the line width of the pattern. Further, during the development processing, the fine dust adhering to the wafer W will damage the pattern. Further, the hydrophobic protective film is applied to the surface of the wafer W before the immersion exposure, and the reason why the protective film is formed is that the liquid during the immersion exposure is bounced, making it difficult to leave the surface of the wafer W. In this case, it is preferable to apply a protective film to the back side of the peripheral portion to prevent the liquid droplets from entering the back side of the peripheral portion of the wafer W and adhering. However, the protective film at this portion is easily peeled off, and when the wafer W is transported to the processing portion after the liquid immersion exposure, it is one of the main causes of dust pollution. The immersion exposure described above has a problem unique to the adhesion of fine dust. To solve this problem, after the immersion exposure, the wafer W is washed by the cleaning unit to effectively remove the fine dust. In this case, in the processing block in which the coating unit or the developing unit is configured as a processing block, it is possible to increase the number of configurations of the original processing unit to improve the efficiency of the processing, and thus, as a processing area -6 - (4 1267129 The interface block of the bridge between the block and the exposure device is configured with this countermeasure. However, the cleaning unit of the wafer W is combined with the coating unit or the developing unit, and the cleaning liquid is supplied to the central portion to rotate the wafer W, and then blown dry. However, the drying device is required to be cleaned and washed. When the lower side of the mounting table of the wafer W is disposed over the entire circumference, it is expected that the cleaning unit will be larger in size if the scattered cleaning liquid is actually caught in the cup. Therefore, it is necessary to allocate a large amount of space in the processing block. In reality, the above interface block must also be space-saving as much as possible due to the design of a large-scale cleaning unit. Further, Patent Document 1 discloses a device in which a cleaning liquid is ejected onto a wafer and then washed by a wafer introductory device to simultaneously wash the cleaning liquid. The cleaning liquid is dropped from the end of the wafer, so that the cup having the upper side opening is required, and the cup body will hinder the device. Patent Document 1: Special Opening 2 0 0 4 - 9 5 7 0 8 And the present invention has been made in view of the above problems, and it is an object of the present invention to provide a cleaning unit for attaching dust to a wafer after immersion exposure, and it is generally considered that The group is sent to the wafer W for spin cleaning. The liquid must be placed on the cup having the recess. In addition, a suction device is provided inside, which makes it difficult to clean the unit. Further, it is difficult to arrange the suction provided above the upper end portion near the both end portions of the wafer. However, such a device is required to be miniaturized to surround the wafer. Report (pages 8 to 9, provided, can be easily removed (including the removal of the hydrophobic protective film by liquid immersion exposure (5) 1267129), which can meet the removal of fine dust generated by immersion exposure (including At the same time as required for the removal of the protective film formed on the back side of the peripheral portion of the wafer, a space saving technique of the coating/developing device or the exposure device can be achieved. (Means for Solving the Problem) The coating/display of the present invention The image device comprises: a coating unit for applying a resist to the surface of the semiconductor wafer; and a developing unit for supplying the developing liquid to the semiconductor wafer after the surface forming liquid layer is subjected to liquid immersion exposure For imaging; characterized by: ^ With: a cleaning unit for washing the semi-conductive after being exposed to immersion exposure. a peripheral portion of the bulk wafer; the cleaning unit includes: a wafer holding portion for maintaining a horizontal level of the semiconductor wafer to which the liquid immersion exposure is applied; and a rotation mechanism for holding the wafer holding portion on the vertical axis Rotating around; the lip-shaped portion is formed to surround a peripheral portion of the semiconductor wafer held by the wafer holding portion; and the upper nozzle portion and the lower nozzle portion are used for the upper surface portion and the lower surface portion of the font portion The inside of the semiconductor wafer is sprayed with a cleaning liquid on each of the peripheral portions of the semiconductor wafer; the cleaning liquid supply unit is configured to supply the cleaning liquid to the upper nozzle portion and the lower nozzle portion; and the suction port is provided on the side of the font portion. a portion for sucking the cleaning liquid sprayed from each of the upper nozzle portion and the lower nozzle portion of the -8 - (6) (6) 1267129; and a moving mechanism for causing the above-mentioned font portion to surround the semiconductor wafer The cleaning/purifying device is moved between the cleaning position of the edge portion and the retracted position retracted by the cleaning position, and the cleaning liquid supply unit is configured to be capable of switching and supplying the first cleaning liquid that is different from each other. With the second cleaning solution, for example, half When the surface of the wafer and the peripheral edge portion of the back surface, before performing the liquid immersion exposure is formed in the hydrophobic protective film, a first cleaning liquid and the second cleaning liquid to remove the protective film. The first cleaning liquid is a chemical liquid for removing the protective film, and the second cleaning liquid is a cleaning liquid for washing the chemical liquid. Further, the upper nozzle portion and the lower nozzle portion are provided with a plurality of cleaning liquid discharge ports which are selected from each other to be separated from each other by the periphery of the semiconductor wafer. The majority of the cleaning liquid discharge ports are formed in different diameters of the semiconductor crystal. Further, the coating/developing device includes a pan plate portion extending from a top surface portion of the π-shaped portion to at least a central portion of the semiconductor wafer, and a drying gas supply portion for aligning the semiconductor crystal from the side of the patio plate portion The round surface is supplied with a dry gas. Further, in the above-described coating/developing apparatus, the three-shaped portion is provided to face each other in the radial direction of the semiconductor wafer, and in this case, the pan-shaped portion is provided to be connected to each other. A pair of upper portions of the upper portion of the font portion and a dry gas supply portion for supplying dry gas to the surface of the semiconductor wafer from the side of the panel portion. Further, the coating/developing device includes: a processing block, and the package 9-(7)(7)1267129 includes the coating unit and the developing unit; and an interface block. The processing block is disposed between the exposure machine for immersing the semiconductor wafer; and the cleaning unit is disposed in the interface block. Further, the above-mentioned patio plate portion is detachably provided with respect to the upper surface portion of the mouth-shaped portion, and an elevating mechanism is provided for raising and lowering the plate portion to a certain font portion of the washing position. Further, in the present invention, in the exposure apparatus in which the liquid layer is formed on the surface of the semiconductor wafer coated with the resist, and the liquid immersion exposure is performed, the cleaning unit may be provided, and the resist pattern forming method of the present invention is After applying a resist on the surface of the semiconductor wafer, a liquid layer is formed on the surface of the semiconductor wafer to perform immersion exposure, and then a developer is supplied to the surface of the wafer for image development; and the feature is that a cleaning process is provided for After the liquid immersion exposure of the semiconductor wafer, the cleaning is performed before the development; the cleaning process includes the following works: a holding process for holding the semiconductor wafer in a horizontal position in the wafer holding portion; The font portion of the first item is located at a position surrounding a peripheral portion of the semiconductor wafer held by the wafer holding portion; and thereafter, the cleaning liquid discharge port and the lower side are provided on the upper side of the font portion. The cleaning liquid discharge port discharges the cleaning liquid to the peripheral edge portions of both sides of the semiconductor wafer, and sucks the cleaning liquid by the suction port provided on the side surface portion of the U-shaped portion, and steps 1-10 (8) 1267129 And a step for cleaning the peripheral edge portion of the semiconductor wafer so that the entire circumference of the wafer holding portion rotatably. Further, in the above-described resist pattern forming method, when the hydrophobic protective film is formed on the surface of the semiconductor wafer and the peripheral edge portion of the back surface, for example, before the liquid immersion exposure, the upper side cleaning liquid discharge port and the lower side cleaning liquid are used. The process of ejecting the cleaning liquid at the discharge port includes: spraying a chemical solution on the peripheral edge portions of both sides of the semiconductor wafer to remove the protective film; and subsequently discharging the cleaning liquid on the peripheral edge portions of both sides of the semiconductor wafer to remove the chemical liquid. engineering. Further, the process of discharging the cleaning liquid to remove the chemical liquid is performed by the upper side cleaning liquid discharge port and the lower side cleaning liquid discharge port, and the discharge position of the chemical liquid is more. The process of ejecting the cleaning liquid near the center of the semiconductor wafer. After the peripheral portions of both sides of the semiconductor wafer are cleaned, the surface of the semiconductor wafer is supplied with a dry gas from the upper surface portion of the upper portion to the at least semi-conductive portion extending from the center portion of the wafer. [Embodiment] An overall configuration of a system for connecting a coating/developing device according to an embodiment of the present invention to an exposure apparatus will be described with reference to Figs. In the figure, B1 is a tray mounting table for carrying out/moving a tray 2 in which, for example, 13 substrates (wafers W) are housed and sealed, and a tray platform 20 is provided, and the loading unit 20a is provided with a plurality of trays 2 The opening/closing portion 21 is provided on the front wall surface when viewed from the tray platform 20, and the receiving/sending means A1 for taking out the wafer W from the tray 2 via the opening/closing portion 21. -11 - (9) 1267129 On the deep side of the tray mounting table B1, the processing unit B2 surrounding the surrounding body is connected to the frame body 22, and the processing unit B2 is arranged alternately in the front side from the front side to heat/cool The main transport means A2, A3 for receiving/sending the wafer w between the storage unit U1, U2, U3 and the respective units of the liquid processing units U4, U5. In other words, when the storage units U1, U2, and U3 and the main conveyance means A2 and A3 are arranged in the front and rear rows when viewed from the tray mounting table B1 side, the wafer transfer openings (not shown) are formed at the respective connection portions, and the wafer is formed. W is freely movable from the storage unit U1 on one end side to the other end side storage unit U3 in the processing unit B2. Further, the main transporting means A2, A3 are placed on the side of the tray mounting table B1, which is a side surface of the front and rear rows of the storage unit U1, U2, U3, and the liquid processing unit U4, which will be described later, for example, on the right side. One of the U5 faces is in a space surrounded by the partition wall 23 formed by the back surface forming one of the left side faces. Further, in the figure, reference numeral 24 denotes a temperature and humidity adjusting unit, and a temperature adjusting device for using the processing liquid for each unit or a pipe for adjusting the temperature and humidity is provided. The above-mentioned storage units U1, U2, and U3 are formed by laminating a plurality of stages (for example, 10 stages) of pre-processing and post-processing of the processing by the liquid processing units U4 and U5, and the combination includes heating of the heating wafer W. Unit) PAB) (not shown), and cooling unit for cooling the wafer W, and the like. Further, as shown in Fig. 2, the liquid processing units U4 and U5 are formed in a chemical liquid storage portion such as a resist or a developing liquid, and an anti-reflection coating unit (BARC) 26 and a resist coating unit are provided. (COT) 27. A developing unit (DEV) 28 that supplies a developing solution to the developing solution of the wafer W is laminated in a plurality of stages (for example, five stages). Further, in the above-described resist application unit 27, for example, a resist is applied on the surface of the wafer w -12 - (10) (10) 1267129, and then a hydrophobic protective film is formed thereon. The exposure portion B4 is connected to the deep side of the storage unit U3 of the processing unit B2 via the interfacial portion (interface block) B3. As shown in FIG. 3, the interfacial portion B3 is composed of a first transfer chamber 3A and a second transfer chamber 3B which are disposed between the processing unit B2 and the exposure unit B4, and each of which is provided with a first wafer transfer unit. 3 1 and the second wafer transfer unit 3 2 . Each of the first wafer transfer unit 31 and the second wafer transfer unit 32 is provided with a transfer arm 31A and a transfer arm 32A which are freely movable and rotatable around the vertical axis and are free to advance and retreat. Further, in the first transfer chamber 3A, on the right side of the first wafer transfer unit 31, which is viewed from the side of the tray stage B1, the receiving/transporting unit (TRS3) 37 and each of the two high-precision cooling plates are provided. The temperature-adjusting unit (CPL2) 39 and the heating/cooling unit (PEB) 38 for applying the post-exposure drying (PEB) treatment to the wafer W after the immersion exposure are disposed, for example, on the upper and lower layers. Further, on the left side, two buffer cards (SBU) 34 and 35 of a plurality of (for example, 13) wafers W are temporarily accommodated, and are provided continuously above and below. In the second transfer chamber 3B, the wafer holding portion 41 associated with the cleaning unit is disposed on the left side of the center portion as viewed from the side of the tray mounting table B1. The wafer holding unit 41 is a drive unit 42 including a rotating mechanism provided in a lower portion of the second transfer chamber 3B, and is provided at a peripheral portion standing in the vertical direction. Further, the wafer holding portion 41 is constituted by a vacuum chuck that sucks and sucks the center portion of the back surface of the wafer, and is rotatable around the vertical axis while the wafer W is held by the drive mechanism 42. The wafer holding portion 41 also serves as a receiving/sending platform, and the wafer W can be received/sold from the transfer arm 32A on the coating/developing device side by the transfer arm 4A on the exposure unit B4 side. -13- (11) 1267129 As seen from the side of the tray mounting table B1, the wafer holding portion 4 1 is further left (in the Y direction of Fig. 3), and the font portions 4, 4 are provided on both sides of the cleaning unit. The nozzle unit 100 is configured to be horizontally movable in the Y direction of FIG. 3 and to face the wafer holding portion 41 in a horizontal posture. Further, the transfer arm 4A on the side of the exposure unit B4 is configured to be movable up and down, freely rotatable about the vertical axis, and freely retractable. The above cleaning unit will be described with reference to Figs. 4-8. The nozzle unit 1A is a font portion 4, 4 having the same structure on both sides of the abundance plate portion 43. The two-shaped portions 4 and 4 are formed so as to surround the peripheral edge of the wafer W held by the wafer holding portion 41, and are disposed opposite to each other in the diameter direction of the wafer W. The upper nozzle portion 50 is provided on the upper surface portion of the mouth-shaped portions 4 and 4, and the cleaning liquid can be ejected onto the surface of the peripheral portion of the wafer W. The lower nozzle portion 60 is provided on the lower surface of the =-shaped portions 4, 4, and the cleaning liquid can be discharged to the back surface of the peripheral portion of the wafer W. Each of the upper nozzle portion 50 and the lower nozzle portion 60 has a plurality of (e.g., six) cleaning liquid discharge ports, and has the same layout in which the upper and lower sides face each other. The configuration of the upper nozzle portion 50 will be described with reference to Fig. 6, and the upper nozzle portion 50 includes a plurality of cleaning liquid discharge ports. In this example, a total of six cleaning liquid sprays are formed in two groups on the broken lines a, b, and c. Exits (50a, 50a), (50b, 50b), (50c, 50c). Each group of cleaning liquid discharge ports (50a, 50a), (50b, 5〇b), and (50c, 50c) are sequentially located at a position separated from the periphery of the wafer W. Each of the cleaning liquid discharge ports (50a, 50a), (50b, 50b), (50c, 50c) is symmetrically arranged with respect to the diameter of the wafer W on the left and right sides, and the more the group is separated from the periphery of the wafer W. The cleaned liquid discharge port has a larger separation distance from the two washing liquid discharge ports constituting the group. To put it bluntly, along the circle of -14-(12) (12)1267129 than the wafer W, each group of cleaning liquid discharge ports (50a, 50a), (50b, 50b), (50c, 50c) ) symmetrical configuration in left and right. Similarly, three sets of cleaning liquid discharge ports (60a, 60a), (60b, 60b), and (60c, 60c) (see FIG. 5) are disposed in the lower nozzle portion 60 of the lower portion of the π-shaped portion 4, respectively. The two nozzle portions 50 and 60 are similarly arranged in the π-shaped portion 4. Further, as shown in Fig. 8, the cleaning liquid discharge ports (50a, 50a), (50b, 50b), and (50c, 50c) are connected to the cleaning liquid supply unit 84 via the cleaning liquid supply pipes 51a, 51b, and 51c. Valves V3, V4, and V5 are provided in the cleaning liquid supply pipes 51a, 51b, and 5cc, respectively. Further, the cleaning liquid discharge ports (60a, 60a), (60b, 60b), and (60c, 60c) are connected to the cleaning liquid supply unit 84 via the cleaning liquid supply pipes 61a, 6 1 b, and 6 1 c. Valves V6, V7, and V8 are provided in the cleaning liquid supply pipes 6 1 a, 61b, and 61c, respectively. The cleaning liquid supply unit 84 is composed of a first cleaning liquid supply source 85, a supplyable liquid for removing a first cleaning liquid, for example, a hydrophobic protective film composed of a fluorine-containing solution, and a second cleaning liquid supply source 86. A cleaning liquid such as pure water can be supplied for washing the chemical liquid; and, for example, the three-way valve V9 constitutes a switching means for switching the first cleaning liquid supply source 85 and the second cleaning liquid supply source 86. The suction port 44 is provided on the side surface portions of the π-shaped portions 4 and 4 to suck the cleaning liquid sprayed from the upper nozzle portion 50 and the lower nozzle portion 60. The suction port 44 is configured to be laterally expanded toward the wafer W, and can effectively suck the cleaning liquid applied to the peripheral portion of the wafer W. Further, in order to improve the suction ability, for example, a plurality of suction ports are provided on the side portions of the curved portions 4 and 4, and a suction pipe may be provided in each of the suction ports. Further, as shown in Fig. 8, the suction pipe 82 is connected to the suction port 44, and the suction means 83 (for example, a -15-(13) (13) 1267129 pump) may be connected to the suction pipe 82. Further, a valve V2 is provided in the suction pipe 82. The drying gas supply unit 45 is provided on the side of the patio plate portion 43, and the dry gas supply unit 45 is configured by a drying gas supply port 46 provided at the center of the ceiling plate portion 43 to supply dry gas to the surface of the wafer W. a space portion 47 that communicates with the dry gas supply port 46; the porous member 48 is provided below the space portion 47 to supply a dry gas to the surface of the wafer W with high uniformity; and a plate 52 is provided on the porous member Below 4 8 is composed of, for example, aluminum provided with a plurality of holes 49. In the dry gas supply unit 45, the space portion 47, the porous member 48, and the plate 52 are formed in a strip shape which is slightly narrower than the width of the wafer plate portion 43 in the diameter direction of the wafer. The dry gas is evenly blown out. Further, as shown in Fig. 8, the gas supply pipe 80 is connected to the dry gas supply port 46, and the dry gas supply source 81 is connected to the gas supply pipe 80. Further, a valve V1 is provided in the gas supply pipe 80. Further, guide members 53 are provided along both side faces in the longitudinal direction of the panel plate portion 43, and the guide members 53 guide the dry gas supplied from the dry gas supply portion 45 to the side portions of the 2-shaped portions 4, 4. Inside. The end portion of the three-shaped support body 70 is connected to the ceiling plate portion 43, and the support body 70 is configured by a moving mechanism 74 including a moving body 71, a spherical spiral portion 72, a guide rail 73, and the like, for example, as shown in FIG. Move in the X-axis direction. The nozzle unit 1 is moved by the moving mechanism 74 so as to surround the cleaning position of the peripheral portion of the wafer W and the retracted position retracted by the cleaning position. The cleaning position refers to a position at which the peripheral portion of the wafer W is inserted through the space in the cavity portion of the π-shaped portions 4 and 4. At this time, the upper nozzle portion 50 and the lower nozzle portion 60 are provided on the π-shaped portions 4, 4, and are located on the peripheral edge portion of the wafer W as shown in Fig. 6 - 16 - (14) (14) 1267129. Hereinafter, the action of the above embodiment will be described with reference to Fig. 9-1. The wafer W is coated with a resist by the resist coating unit 27, and after forming a hydrophobic protective film thereon, it is subjected to liquid immersion exposure in the exposed portion B4. In the present embodiment, the wafer W to be processed is formed of a hydrophobic protective film having a back surface spanning the peripheral portion via the side surface of the entire surface of the wafer W. However, a wafer having a hydrophobic protective film only on the peripheral portion may be applied. W. First, the wafer W after the liquid immersion exposure is placed on the wafer holding portion 4 1 by the transfer arm 4 A on the exposure portion B4 side. This wafer W is horizontally held by the wafer holding portion 41 (S1). Next, the nozzle unit 100 is moved from the retracted position to the washing position by the moving mechanism 74. That is, the hole portion moved to the π-shaped portions 4, 4 causes the peripheral portion of the wafer W to be inserted through the space (S2). In the cleaning position, the ^-shaped portions 4 and 4 are in a state of surrounding the peripheral edge portion of the wafer W, and the upper nozzle portion 50 and the lower nozzle portion 60 are provided on the π-shaped portions 4 and 4 as shown in Fig. 6 . The surface and the back surface of the peripheral portion of the wafer W are opposed to each other. The first nozzle portion 50 and the lower nozzle portion 60 discharge the fluorine-containing solution of the first cleaning liquid onto the front and back sides of the wafer W to form a chemical solution for removing the hydrophobic protective film, so that the π-shaped portions 4 and 4 are formed. The suction port 44 of the side surface portion is set to the suction state (S3). After that, the first cleaning liquid is switched to the second cleaning liquid by the three-way valve V9, and the pure water of the second cleaning liquid is discharged to the front and back sides of the wafer W, and the sides of the square-shaped portions 4 and 4 are formed. The suction port 44 of the portion is set to the suction state (S4). In addition, the timing of the start of the suction is set to be similar to or slightly before the supply of the first cleaning liquid, and the suction port 44 is also in a suction state when the first cleaning liquid is switched to the second cleaning liquid by the three-way valve V9. it is good. -17- (15) (15) 1267129 The following shows the details of steps 2 and 3 according to Figure 1. In FIG. 1, for example, a resist film R is applied to the surface of the wafer W of 12 inches, and the coating region of the resist film R is formed to be more inner side than the circumferential portion of the wafer W, specifically, The resist film R is applied to the surface of the wafer W such that the distance from the outer edge portion of the wafer W to the outer edge portion of the resist film R is, for example, one. 5mm. The protective film 形成 is formed by winding the entire surface of the wafer W across the wafer W side end into the back side of the wafer W. The protective film 背面 on the back side of the wafer W is formed, for example, from the outer edge portion of the wafer W toward the center portion by, for example, about 5 mm. In the wafer W formed as described above, the cleaning liquid discharge port (50a, 50 a) is located substantially perpendicular to the outer edge portion of the resist film R, and the cleaning liquid discharge port (60 b, 60b) is opposite to the protective film. The outer edge of the cymbal is roughly in the vertical direction. At these positions, open the valve V3 and the valve V7, and wash it in the middle from the outermost cleaning liquid discharge ports (50a, 50a) and the three groups of cleaning liquid discharge ports among the three groups of cleaning liquid discharge ports. The liquid ejecting ports (60b, 60b) are used to remove the chemical solution for removing the hydrophobic protective film from the fluorine-containing solution of the first cleaning liquid, and are discharged to the surface and the back side of the wafer W (see FIG. 10(a)). . At this time, since the suction ports 44 of the side portions of the font portions 4 and 4 are attracted, the chemical liquid sprayed on the front and back sides of the wafer W and the protective film detached by the chemical liquid can be used by The suction flow formed in the π-shaped portions 4 and 4 is sucked and discharged by the suction port 44 at any time (see Fig. 1 (b)). The protective film 形成 formed from the outer edge portion of the wafer W to the outer edge portion of the resist film R, the protective film 不 not formed on the wafer W side end, and the protective film 形成 formed on the back side of the wafer W are removed. The three-shaped portions 4 and 4 are provided on the inner side from the comparative cleaning liquid discharge ports (50a, 50a) and the cleaning liquid discharge ports (60b, 60b) (-18-(16) 1267129 in the central portion of the wafer W The cleaning liquid discharge ports (50b, 50b) and the cleaning liquid discharge ports (60c, 60〇, the pure water of the second cleaning liquid is sprayed on the surface and the back side of the wafer W, respectively. Since the suction holes 44 of the side portions of the J-shaped portions 4 and 4 are attracted, the pure water sprayed on the surface and the back surface of the wafer W can be attracted by the formation of the font portions 4 and 4 The flow is attracted and discharged by the suction port 44 at any time (refer to FIG. 10 (〇) 〇 #, and the surface of the wafer W is dried by a dry gas, and the dry gas is uniformly sprayed on the surface of the wafer W, because the font portion is The suction port 44 of the side portions of 4 and 4 is in a suction state and flows toward the outer periphery of the wafer W, and is sucked and exhausted by the suction port 45 (S5). The wafer W is dried after a specific time. . After the surface, the wafer holding portion 41 rotates only the center angle 晶圆 of the wafer W corresponding to the moving region of the cleaning liquid ejection port by the driving mechanism 42, and is washed and dried at this position (S3-S5). . Thereafter, the wafer W is sequentially rotated at an angle Θ to be washed and dried at each position (S3-S5) (S6). After the drying of the last angular position is completed, the nozzle unit 1 is moved from the cleaning position to the retracted position by the moving mechanism 74 (S7), and the transfer arm 32A on the second transfer chamber 3B side receives the wafer holding The wafer 41 placed on the portion 41 is transported to the dielectric surface portion 3A. According to the above embodiment, after the liquid immersion exposure, the peripheral portion of the wafer W is cleaned, and after the liquid immersion exposure, droplets are likely to remain on the peripheral edge portion of the wafer W, and the dust is adhered. However, the peripheral portion of the wafer W can be cleaned. Prevent dust pollution from the project after immersion exposure. The lip-shaped portions 4 and 4 formed by surrounding the wafer W sandwich the peripheral portion of the wafer W, and the upper portion -19-(17) (17) 1267129 side nozzle portion 50 and the lower portion are provided on the font portions 4 and 4. The side nozzle portion 60 sucks the cleaning liquid on the peripheral edge portion of the wafer W and sucks the suction port 44 on the side surface portions of the font portions 4 and 4, so that the cleaning liquid does not have the surface of the wafer W and the π word. The portions 4 and 4 are scattered, that is, it is not necessary to provide a cup for collecting the cleaning liquid around the wafer holding portion 41, and the space for the cleaning unit can be reduced. As a result, the size of the coating/developing device can be prevented from increasing. Further, the first cleaning liquid and the second cleaning liquid are switched by the three-way valve V9, and the cleaning liquid discharge ports (50a, 50a), (50b, 50b), (50c, respectively) are selected by the valves V3-V8. 50c) and (60a, 60a), (60b, 60b), (60c, 60c), the cleaning liquid is ejected. Therefore, for example, when the hydrophobic protective film 形成 is formed on the wafer W, the selected one group of cleaning liquid can be sprayed. The chemical solution for removing the protective film is ejected from the outlet, and then the liquid is ejected by a group of cleaning liquid ejection ports which are further inside (close to the center side of the wafer W) than the previously selected one of the cleaning liquid ejection ports. The cleaning liquid can be used to wash the chemical liquid and the peeled material peeled off by the chemical liquid, and can be thoroughly cleaned, in particular, the protective film can be removed from the peripheral portion of the wafer W, and the dust pollution can be surely prevented. As described above, since the distances from the periphery of the wafer W are different from each other, and the plurality of cleaning liquid discharge ports that can selectively discharge the cleaning liquid are provided, the cleaning can be performed with a large degree of freedom. For example, in the above embodiment, the removal width of the protective film can be selected. In addition, when the protective film Η is not formed on the wafer W, for example, a special chemical solution for removing foreign matter such as a solubility product of the resist film R is ejected from the selected one of the cleaning liquid discharge ports, and then the first selected one is selected. Group cleaning liquid discharge port -20- (18) 1267129 The inner side (near the center side of the wafer W), a group of cleaning liquid spray outlets spray pure water, etc., can be thoroughly cleaned, and can effectively prevent dust pollution . Further, when the dry gas is supplied to the surface of the wafer W by the patio plate portion 43 provided on the upper surface of the π-shaped portions 4 and 4, the wafer W can be dried even when droplets are attached to the surface f of the wafer W during liquid immersion. surface. Further, the peripheral portion of the wafer W can be surely removed by the cleaning liquid. Since the wafer W can be dried, no droplets are adhered to the transfer arm 32A on which the wafer W is transferred. Fig. 1 and Fig. 1 and Fig. 3 show another embodiment of the present invention. In this example, the nacelle plate portion 43 is configured such that the elevating mechanism 53 can be detachably attached to the n/shaped portions 4 and 4 of the washing position. The above-described patio plate portion 43 is formed in a substantially circular shape, and the outer edge portions of the patio plate portion 43 are in close contact with the three-shaped portions 4 and 4, respectively. A substantially circular segment 54 formed on one of the end sides. Further, the π-shaped portions 4 and 4 are opposed to each other, and are respectively movable horizontally by the moving mechanism 74. Further, in Figs. 12 and 13, the same components as those of the above-described nozzle unit 100 are denoted by the same reference numerals. In this configuration, for example, the wafer W is rotated at a sequential angle to the position of each wafer, and only the cleaning of the peripheral portion of the wafer W (S3-S4) is performed, and the wafer is cleaned at the final angular position (S3- After S4), the dry gas supply unit 45 of the patio plate portion 43 supplies the dry gas to the entire surface of the wafer W. " That is, the peripheral portion of the wafer W is dried by the suction of the suction port 44 of the mouth-shaped portions 4, 4, and is further inside the drying region of the suction port 44, by the side of the patio plate portion 43 Drying gas drying method. Further, when the entire surface area of the wafer W is to be dried by the dry gas on the side of the ceiling plate portion 43, the ceiling plate portion 43 can be made to cover the entire surface of the wafer W. In this case, when the peripheral edge portion of the wafer W enters the discharge region of the dry gas of the pan-plate portion 43 in the shape of the inside of the zigzag portion 4, 4, and the wafer size, the pan plate portion 43 becomes The shapes of the π-shaped portions 4 and 4, the 17-shaped portions 4 and 4, that is, the shapes of the upper and lower faces of the upper surface of the patio plate portions 434 and 4 are formed. Further, the substantially rectangular disk portion 43 is not provided, and the peripheral portions (S3-S4) of the wafer W are washed by the font portions 4 and 4. In this case, a device drying gas for drying the surface of the wafer W is additionally provided. According to the present invention, the simple unit is dried by the liquid immersion exposure, and the peripheral portion of the wafer is likely to remain in the peripheral portion of the wafer after the liquid immersion exposure. The peripheral portion of the wafer prevents contamination after immersion exposure. In addition, the peripheral portion of the zigzag formed by the surrounding wafer W is ejected from the upper nozzle portion and the lower ejecting peripheral portion of the lip-shaped portion, and is sucked by the side surface of the font portion. The cleaning solution does not come from the wafer surface with π. Therefore, it is not necessary to provide a cleaning and cleaning around the wafer holding portion to achieve space saving of the cleaning unit, and as a result, it can be avoided! Large size. In addition, when the crystal protective film is used, the chemical solution for removing the protective film can be ejected, and the pure water or the like can be washed or the dissolved product of the resist can be discharged. After the chemical solution is washed with pure water or the like, it is possible to carry out the processing of the micro-small portion of the state in which the surface portion is formed by the opposite side of the shape portion. The round mouth is applied to the cup of the suction part of the wafer portion, and the coating/development is rounded to form a hydrophobic layer, and the foreign matter is removed by careful removal. -22- (20) 1267129 It does prevent dust pollution. Further, it is configured to include a plurality of cleaning liquid discharge ports which are different in distance from the periphery of the semiconductor wafer and which can be selectively selected to eject the cleaning liquid. Therefore, it is possible to perform cleaning with high degree of freedom. For example, the removal width of the protective film can be adjusted, and after the chemical liquid is ejected from the peripheral portion of the wafer, the chemical liquid can be sprayed from the position closer to the inner side of the discharge position (near the center of the wafer), so that the chemical solution can be surely removed. The liquid medicine or the ingredients dissolved in the liquid. # Further, the surface of the upper surface of the π-shaped portion is supplied with dry gas to the surface of the wafer, whereby the cleaned wafer can be dried, and the droplets are not attached to the wafer after the transfer. arm. Figure and diagram This book is a simple one-style diagram, a diagram, a diagram, a diagram, a diagram, and a diagram. This is a state of view. The upper part of the oblique body is mounted on the image. The image is displayed on the surface of the image. The four groups are marked as ^/upper applied to the painted image. The display of the image of the surface of the surface of the surface of the nozzle is broken. Cut the figure to the side of the square - Υ Υ Υ 元 元 元 元 单 单 单 单 单 单 单 单 单 单 单 单 单 单 单 单 单 单 单 单 单 单 单 单 单 单 单 单 单 单The figure is used to cut off the supply and cut (3⁄4 to the side of the lead to attract Z Z-connected to the even yuan yuan single bay mouth DtB (spray on the above description for the flow of the crystal flow of the crystal wash single nozzle spray The description is shown in Fig. 3-1 (21) (21) 1267129. Fig. 1 is a schematic diagram of the mode of cleaning the wafer using the above nozzle unit. Fig. 11 is a schematic explanatory diagram of drying the wafer using the above nozzle unit. 12 is a perspective view of another nozzle unit assembled to the above coating/developing device. Fig. 13 is a partial cross-sectional view of the nozzle unit of Fig. 12. Fig. 14 is an exposure means for applying immersion exposure to the wafer. Fig. 15 is a schematic explanatory diagram of immersion exposure of a wafer surface by the above-mentioned exposure means. [Description of main component symbols] W, wafer; 4, π-shaped portion; 41, wafer holding portion; 42. Driver sled; 43, patio plate portion; 44, suction port; 45, dry gas supply portion; 46, dry gas supply port; 47, space portion, 48, porous member; 49, hole; Upper nozzle portion; 52, plate; 53, guide portion; 54, segment portion; 60, lower nozzle portion 81, gas supply source; 82, suction pipe; 83, suction means; 84, cleaning liquid supply part; 85, first cleaning liquid supply part; 8.6, second cleaning liquid supply part; 1 〇 0, Nozzle unit; V 1~V 8, valve; V9, three-way valve. -24-