TWI266921B - Display device and manufacturing method - Google Patents

Display device and manufacturing method

Info

Publication number
TWI266921B
TWI266921B TW093129637A TW93129637A TWI266921B TW I266921 B TWI266921 B TW I266921B TW 093129637 A TW093129637 A TW 093129637A TW 93129637 A TW93129637 A TW 93129637A TW I266921 B TWI266921 B TW I266921B
Authority
TW
Taiwan
Prior art keywords
display device
channel region
driving
region
semiconductor layer
Prior art date
Application number
TW093129637A
Other languages
English (en)
Chinese (zh)
Other versions
TW200523596A (en
Inventor
Yasumasa Goto
Original Assignee
Toshiba Matsushita Display Tec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Matsushita Display Tec filed Critical Toshiba Matsushita Display Tec
Publication of TW200523596A publication Critical patent/TW200523596A/zh
Application granted granted Critical
Publication of TWI266921B publication Critical patent/TWI266921B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW093129637A 2003-11-27 2004-09-30 Display device and manufacturing method TWI266921B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003398085A JP2005159162A (ja) 2003-11-27 2003-11-27 表示装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200523596A TW200523596A (en) 2005-07-16
TWI266921B true TWI266921B (en) 2006-11-21

Family

ID=34723053

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093129637A TWI266921B (en) 2003-11-27 2004-09-30 Display device and manufacturing method

Country Status (6)

Country Link
US (1) US7084081B2 (https=)
JP (1) JP2005159162A (https=)
KR (1) KR100693235B1 (https=)
CN (1) CN100372054C (https=)
SG (1) SG112108A1 (https=)
TW (1) TWI266921B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4589830B2 (ja) * 2005-06-29 2010-12-01 共同印刷株式会社 フレキシブルディスプレイ及びその製造方法
US7187123B2 (en) * 2004-12-29 2007-03-06 Dupont Displays, Inc. Display device
KR100703467B1 (ko) * 2005-01-07 2007-04-03 삼성에스디아이 주식회사 박막트랜지스터
KR101293566B1 (ko) * 2007-01-11 2013-08-06 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
WO2009042784A1 (en) * 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3221473B2 (ja) * 1994-02-03 2001-10-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH11121751A (ja) 1997-10-13 1999-04-30 Sanyo Electric Co Ltd 薄膜半導体装置の製造方法
KR100292048B1 (ko) * 1998-06-09 2001-07-12 구본준, 론 위라하디락사 박막트랜지스터액정표시장치의제조방법
JP2000243969A (ja) 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
WO2000002251A1 (en) * 1998-07-06 2000-01-13 Matsushita Electric Industrial Co., Ltd. Thin film transistor and liquid crystal display
JP2000243968A (ja) 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
JP2000133807A (ja) 1998-10-22 2000-05-12 Seiko Epson Corp 多結晶シリコン薄膜トランジスタ
JP2001109399A (ja) * 1999-10-04 2001-04-20 Sanyo Electric Co Ltd カラー表示装置
JP5030345B2 (ja) * 2000-09-29 2012-09-19 三洋電機株式会社 半導体装置
JP4289816B2 (ja) * 2001-03-22 2009-07-01 シャープ株式会社 半導体装置及びその製造方法
JP2004119919A (ja) * 2002-09-30 2004-04-15 Hitachi Ltd 半導体薄膜および半導体薄膜の製造方法

Also Published As

Publication number Publication date
CN100372054C (zh) 2008-02-27
TW200523596A (en) 2005-07-16
KR100693235B1 (ko) 2007-03-12
KR20050051539A (ko) 2005-06-01
CN1638024A (zh) 2005-07-13
JP2005159162A (ja) 2005-06-16
US7084081B2 (en) 2006-08-01
SG112108A1 (en) 2005-06-29
US20050158903A1 (en) 2005-07-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees