TWI266910B - Embedded waveguide detectors - Google Patents

Embedded waveguide detectors

Info

Publication number
TWI266910B
TWI266910B TW093115564A TW93115564A TWI266910B TW I266910 B TWI266910 B TW I266910B TW 093115564 A TW093115564 A TW 093115564A TW 93115564 A TW93115564 A TW 93115564A TW I266910 B TWI266910 B TW I266910B
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
forming
trench
doped
substrate
Prior art date
Application number
TW093115564A
Other languages
English (en)
Other versions
TW200513694A (en
Inventor
Francisco A Leon
Stephen Moffat
Lawrence C West
Yuichi Wada
Gregory L Wojcik
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200513694A publication Critical patent/TW200513694A/zh
Application granted granted Critical
Publication of TWI266910B publication Critical patent/TWI266910B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System including only AIVBIV alloys, e.g. SiGe
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12061—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
TW093115564A 2003-05-29 2004-05-31 Embedded waveguide detectors TWI266910B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US47414503P 2003-05-29 2003-05-29

Publications (2)

Publication Number Publication Date
TW200513694A TW200513694A (en) 2005-04-16
TWI266910B true TWI266910B (en) 2006-11-21

Family

ID=33551479

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093115564A TWI266910B (en) 2003-05-29 2004-05-31 Embedded waveguide detectors

Country Status (7)

Country Link
US (3) US7075165B2 (zh)
EP (1) EP1636615A4 (zh)
JP (1) JP2007516607A (zh)
KR (1) KR20060033721A (zh)
CN (1) CN1856860A (zh)
TW (1) TWI266910B (zh)
WO (1) WO2005001519A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI411120B (zh) * 2009-06-30 2013-10-01 Intel Corp 側壁光偵測器

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US7329556B2 (en) * 2004-12-30 2008-02-12 Korean Electronics Technology Institute High-sensitivity image sensor and fabrication method thereof
US20070170476A1 (en) * 2006-01-20 2007-07-26 Giziewicz Wojciech P Lateral photodetectors with transparent electrodes
US7553687B2 (en) * 2006-06-28 2009-06-30 Intel Corporation Dual seed semiconductor photodetectors
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US8290325B2 (en) * 2008-06-30 2012-10-16 Intel Corporation Waveguide photodetector device and manufacturing method thereof
US7858503B2 (en) * 2009-02-06 2010-12-28 Applied Materials, Inc. Ion implanted substrate having capping layer and method
US8178430B2 (en) 2009-04-08 2012-05-15 International Business Machines Corporation N-type carrier enhancement in semiconductors
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US20110186940A1 (en) * 2010-02-03 2011-08-04 Honeywell International Inc. Neutron sensor with thin interconnect stack
US8304272B2 (en) 2010-07-02 2012-11-06 International Business Machines Corporation Germanium photodetector
US8310021B2 (en) 2010-07-13 2012-11-13 Honeywell International Inc. Neutron detector with wafer-to-wafer bonding
US8545689B2 (en) 2010-09-02 2013-10-01 International Business Machines Corporation Gallium electrodeposition processes and chemistries
US20120055612A1 (en) 2010-09-02 2012-03-08 International Business Machines Corporation Electrodeposition methods of gallium and gallium alloy films and related photovoltaic structures
WO2013066325A1 (en) * 2011-11-02 2013-05-10 Intel Corporation Waveguide avalanche photodetectors
JP5831165B2 (ja) * 2011-11-21 2015-12-09 富士通株式会社 半導体光素子
JP6648008B2 (ja) 2013-06-12 2020-02-14 マサチューセッツ インスティテュート オブ テクノロジー 光変調器、波長分割多重システムおよび光変調器デバイス
WO2017058319A2 (en) * 2015-06-30 2017-04-06 Massachusetts Institute Of Technology Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same
US11105974B2 (en) 2015-06-30 2021-08-31 Massachusetts Institute Of Technology Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same
KR102601212B1 (ko) 2018-10-10 2023-11-10 삼성전자주식회사 광전 소자를 포함하는 집적 회로 소자
CN112750847A (zh) * 2019-10-31 2021-05-04 台湾积体电路制造股份有限公司 半导体装置及其形成方法
US11641003B2 (en) * 2019-12-03 2023-05-02 Northwestern University Methods of fabricating planar infrared photodetectors
EP4136678A1 (en) * 2020-04-17 2023-02-22 The Regents of University of California Method for removing a device using an epitaxial lateral overgrowth technique
US11624941B2 (en) 2020-06-11 2023-04-11 Massachusetts Institute Of Technology Bipolar junction transistor optical modulator

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Publication number Priority date Publication date Assignee Title
TWI411120B (zh) * 2009-06-30 2013-10-01 Intel Corp 側壁光偵測器

Also Published As

Publication number Publication date
WO2005001519A3 (en) 2006-04-06
US20090269878A1 (en) 2009-10-29
KR20060033721A (ko) 2006-04-19
WO2005001519A2 (en) 2005-01-06
US20050051767A1 (en) 2005-03-10
CN1856860A (zh) 2006-11-01
EP1636615A4 (en) 2007-03-14
JP2007516607A (ja) 2007-06-21
EP1636615A2 (en) 2006-03-22
TW200513694A (en) 2005-04-16
US7075165B2 (en) 2006-07-11
US20070018270A1 (en) 2007-01-25

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees