TWI266813B - Wet process performed with anode water containing oxidative substance and/or cathode water containing reductive substance in semiconductor device fabrication, and anode water and/or cathode water used in the wet process - Google Patents

Wet process performed with anode water containing oxidative substance and/or cathode water containing reductive substance in semiconductor device fabrication, and anode water and/or cathode water used in the wet process

Info

Publication number
TWI266813B
TWI266813B TW090117082A TW90117082A TWI266813B TW I266813 B TWI266813 B TW I266813B TW 090117082 A TW090117082 A TW 090117082A TW 90117082 A TW90117082 A TW 90117082A TW I266813 B TWI266813 B TW I266813B
Authority
TW
Taiwan
Prior art keywords
anode
cathode
wet process
water containing
substance
Prior art date
Application number
TW090117082A
Other languages
English (en)
Chinese (zh)
Inventor
Im-Soo Park
Kun-Tack Lee
Young-Min Kwon
Sang-Rok Hah
Woo-Gwan Shim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TWI266813B publication Critical patent/TWI266813B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
    • C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
    • C02F1/46104—Devices therefor; Their operating or servicing
    • C02F1/4618—Devices therefor; Their operating or servicing for producing "ionised" acidic or basic water
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
    • C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
    • C02F1/46104—Devices therefor; Their operating or servicing
    • C02F1/46109—Electrodes
    • C02F2001/46152—Electrodes characterised by the shape or form
    • C02F2001/46157—Perforated or foraminous electrodes
    • C02F2001/46161—Porous electrodes
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2201/00—Apparatus for treatment of water, waste water or sewage
    • C02F2201/46—Apparatus for electrochemical processes
    • C02F2201/461—Electrolysis apparatus
    • C02F2201/46105—Details relating to the electrolytic devices
    • C02F2201/46115—Electrolytic cell with membranes or diaphragms
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2201/00—Apparatus for treatment of water, waste water or sewage
    • C02F2201/46—Apparatus for electrochemical processes
    • C02F2201/461—Electrolysis apparatus
    • C02F2201/46105—Details relating to the electrolytic devices
    • C02F2201/4612—Controlling or monitoring
    • C02F2201/46145—Fluid flow
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2209/00—Controlling or monitoring parameters in water treatment
    • C02F2209/04—Oxidation reduction potential [ORP]
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2209/00—Controlling or monitoring parameters in water treatment
    • C02F2209/06—Controlling or monitoring parameters in water treatment pH
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Environmental & Geological Engineering (AREA)
  • Water Supply & Treatment (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Water Treatment By Electricity Or Magnetism (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW090117082A 2000-09-06 2001-07-12 Wet process performed with anode water containing oxidative substance and/or cathode water containing reductive substance in semiconductor device fabrication, and anode water and/or cathode water used in the wet process TWI266813B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2000-0052661A KR100389917B1 (ko) 2000-09-06 2000-09-06 산화성 물질을 포함하는 아노드 수 및/또는 환원성 물질을포함하는 캐소드 수를 사용하는 반도체 제조를 위한 습식공정 및 이 공정에 사용되는 아노드수 및/또는 캐소드수

Publications (1)

Publication Number Publication Date
TWI266813B true TWI266813B (en) 2006-11-21

Family

ID=19687658

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090117082A TWI266813B (en) 2000-09-06 2001-07-12 Wet process performed with anode water containing oxidative substance and/or cathode water containing reductive substance in semiconductor device fabrication, and anode water and/or cathode water used in the wet process

Country Status (4)

Country Link
US (1) US6565736B2 (ko)
JP (1) JP3883401B2 (ko)
KR (1) KR100389917B1 (ko)
TW (1) TWI266813B (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8043435B2 (en) 2006-12-27 2011-10-25 Siltronic Ag Cleaning liquid and cleaning method for electronic material
TWI405621B (zh) * 2006-12-27 2013-08-21 Siltronic Ag 電子材料的清洗液及清洗方法
TWI570800B (zh) * 2011-12-06 2017-02-11 Univ Osaka Processing method of solid oxide and device thereof

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010070621A (ko) * 2001-05-28 2001-07-27 류근걸 전리수를 이용한 반도체 실리콘웨이퍼 습식세정 방법
JP5140218B2 (ja) * 2001-09-14 2013-02-06 有限会社コヒーレントテクノロジー 表面洗浄・表面処理に適した帯電アノード水の製造用電解槽及びその製造法、並びに使用方法
ES2377945T3 (es) * 2001-12-05 2012-04-03 Oculus Innovative Sciences, Inc. Método y aparato para producir agua con potencial de oxidación y reducción (ORP) negativo y positivo
JP2004058006A (ja) * 2002-07-31 2004-02-26 First Ocean Kk 電解水製造方法
US7038947B2 (en) * 2002-12-19 2006-05-02 Taiwan Semiconductor Manufacturing Co., Ltd. Two-transistor flash cell for large endurance application
US9168318B2 (en) 2003-12-30 2015-10-27 Oculus Innovative Sciences, Inc. Oxidative reductive potential water solution and methods of using the same
US20050139808A1 (en) * 2003-12-30 2005-06-30 Oculus Innovative Sciences, Inc. Oxidative reductive potential water solution and process for producing same
US20050196462A1 (en) * 2003-12-30 2005-09-08 Oculus Innovative Sciences, Inc. Topical formulation containing oxidative reductive potential water solution and method for using same
US7333188B2 (en) * 2004-09-30 2008-02-19 International Business Machines Corporation Method and apparatus for real-time measurement of trace metal concentration in chemical mechanical polishing (CMP) slurry
MX2007011706A (es) * 2005-03-23 2007-12-11 Oculus Innovative Sciences Inc Metodo para tratar quemaduras de segundo y tercer grado utilizando solucion de agua con potencial oxido reductor.
AU2006242175A1 (en) 2005-05-02 2006-11-09 Oculus Innovative Sciences, Inc. Method of using oxidative reductive potential water solution in dental applications
WO2007085018A2 (en) * 2006-01-20 2007-07-26 Oculus Innovative Sciences, Inc. Methods of treating or preventing inflammation and hypersensitivity with oxidative reductive potential water solution
US7754064B2 (en) * 2006-09-29 2010-07-13 Eltron Research & Development Methods and apparatus for the on-site production of hydrogen peroxide
US7842614B2 (en) 2007-01-04 2010-11-30 Fujitsu Limited Method for manufacturing semiconductor device and polisher used in the method for manufacturing semiconductor device
JP2010205782A (ja) 2009-02-27 2010-09-16 Renesas Electronics Corp 半導体装置の製造方法
US10342825B2 (en) 2009-06-15 2019-07-09 Sonoma Pharmaceuticals, Inc. Solution containing hypochlorous acid and methods of using same
JP2014062297A (ja) * 2012-09-20 2014-04-10 Toshiba Corp 処理装置、処理液の製造方法、および電子デバイスの製造方法
JP6317580B2 (ja) * 2013-12-03 2018-04-25 山本　栄一 半導体装置の製造方法
DE102014203374B4 (de) 2014-02-25 2018-05-03 Condias Gmbh Elektrodenanordnung und Verfahren zum elektrochemischen Herstellen von elektrolysiertem Wasser
DE102014203372A1 (de) 2014-02-25 2015-08-27 Condias Gmbh Elektrodenanordnung für eine elektrochemische Behandlung einer Flüssigkeit
DE102016109771B4 (de) * 2016-05-27 2020-09-10 Brooks Automation (Germany) Gmbh Verfahren zum Reinigen einer Kunststoffoberfläche
US10062560B1 (en) 2017-04-26 2018-08-28 Globalfoundries Inc. Method of cleaning semiconductor device

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Publication number Priority date Publication date Assignee Title
JP2906986B2 (ja) * 1994-03-25 1999-06-21 日本電気株式会社 ウエット処理装置および電解活性水生成方法およびウエット処理方法
JP2830733B2 (ja) * 1994-03-25 1998-12-02 日本電気株式会社 電解水生成方法および電解水生成機構
JP3181796B2 (ja) * 1994-10-28 2001-07-03 日本電気株式会社 電解水製造装置
JP3181795B2 (ja) * 1994-10-28 2001-07-03 オルガノ株式会社 電解水製造装置
JP2832173B2 (ja) * 1995-05-31 1998-12-02 信越半導体株式会社 半導体基板の洗浄装置および洗浄方法
JP2825082B2 (ja) * 1996-08-16 1998-11-18 日本電気株式会社 分析前処理方法及び分析前処理装置並びに分析方法及び分析装置
US6277266B1 (en) * 1999-03-23 2001-08-21 Tateki Yamaoka Device for producing ion water and partition wall for device for producing ion water

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8043435B2 (en) 2006-12-27 2011-10-25 Siltronic Ag Cleaning liquid and cleaning method for electronic material
TWI405621B (zh) * 2006-12-27 2013-08-21 Siltronic Ag 電子材料的清洗液及清洗方法
TWI570800B (zh) * 2011-12-06 2017-02-11 Univ Osaka Processing method of solid oxide and device thereof

Also Published As

Publication number Publication date
JP3883401B2 (ja) 2007-02-21
KR100389917B1 (ko) 2003-07-04
KR20020019675A (ko) 2002-03-13
US6565736B2 (en) 2003-05-20
US20020027084A1 (en) 2002-03-07
JP2002146574A (ja) 2002-05-22

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