TWI266418B - Solid-state imaging device and its manufacturing method - Google Patents

Solid-state imaging device and its manufacturing method

Info

Publication number
TWI266418B
TWI266418B TW092122021A TW92122021A TWI266418B TW I266418 B TWI266418 B TW I266418B TW 092122021 A TW092122021 A TW 092122021A TW 92122021 A TW92122021 A TW 92122021A TW I266418 B TWI266418 B TW I266418B
Authority
TW
Taiwan
Prior art keywords
lower layer
potential
region
vertical transfer
transfer register
Prior art date
Application number
TW092122021A
Other languages
English (en)
Other versions
TW200409351A (en
Inventor
Kazushi Wada
Kouichi Harada
Shuji Otsuza
Mitsuru Sato
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200409351A publication Critical patent/TW200409351A/zh
Application granted granted Critical
Publication of TWI266418B publication Critical patent/TWI266418B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW092122021A 2002-08-12 2003-08-11 Solid-state imaging device and its manufacturing method TWI266418B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002235125 2002-08-12
JP2002324613 2002-11-08

Publications (2)

Publication Number Publication Date
TW200409351A TW200409351A (en) 2004-06-01
TWI266418B true TWI266418B (en) 2006-11-11

Family

ID=31890521

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092122021A TWI266418B (en) 2002-08-12 2003-08-11 Solid-state imaging device and its manufacturing method

Country Status (6)

Country Link
US (2) US7535038B2 (zh)
JP (1) JP4613821B2 (zh)
KR (1) KR101016539B1 (zh)
CN (1) CN100474607C (zh)
TW (1) TWI266418B (zh)
WO (1) WO2004017411A1 (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4613821B2 (ja) * 2002-08-12 2011-01-19 ソニー株式会社 固体撮像素子及びその製造方法
JP4680552B2 (ja) * 2004-09-02 2011-05-11 富士フイルム株式会社 固体撮像素子の製造方法
JP4622573B2 (ja) * 2005-02-21 2011-02-02 パナソニック株式会社 固体撮像素子
JP4951898B2 (ja) * 2005-08-26 2012-06-13 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法および固体撮像素子を用いた画像撮影装置
JP2010123707A (ja) * 2008-11-19 2010-06-03 Sony Corp 固体撮像装置およびその読み出し方法
US8772891B2 (en) * 2008-12-10 2014-07-08 Truesense Imaging, Inc. Lateral overflow drain and channel stop regions in image sensors
TWI397175B (zh) * 2009-02-09 2013-05-21 Sony Corp 固體攝像裝置、攝相機、電子機器、及固體攝像裝置之製造方法
JP5651928B2 (ja) * 2009-05-11 2015-01-14 ソニー株式会社 固体撮像素子、撮像装置
JP5546198B2 (ja) * 2009-10-09 2014-07-09 キヤノン株式会社 固体撮像装置
US8908070B2 (en) * 2010-06-18 2014-12-09 Fujifilm Corporation Solid state imaging device and digital camera
JP2013038118A (ja) * 2011-08-04 2013-02-21 Sony Corp 固体撮像素子および電子機器
KR101280254B1 (ko) * 2011-08-11 2013-07-05 주식회사 동부하이텍 반도체 감광 디바이스용 이미지 센서 및 그 제조 방법, 이를 이용한 이미지 처리 장치 및 그 색신호 판별 방법
CN111385486B (zh) * 2018-12-29 2022-04-08 北京小米移动软件有限公司 图像采集设备的控制方法和装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0186162B1 (en) * 1984-12-24 1989-05-31 Kabushiki Kaisha Toshiba Solid state image sensor
US4974043A (en) * 1989-10-12 1990-11-27 Eastman Kodak Company Solid-state image sensor
EP0545647B1 (en) * 1991-12-02 2001-10-24 Canon Kabushiki Kaisha Measuring apparatus
JP3033524B2 (ja) * 1997-05-23 2000-04-17 日本電気株式会社 固体撮像装置
US6690423B1 (en) * 1998-03-19 2004-02-10 Kabushiki Kaisha Toshiba Solid-state image pickup apparatus
JP2000299456A (ja) * 1999-04-13 2000-10-24 Sony Corp 固体撮像装置
JP2001111894A (ja) * 1999-10-07 2001-04-20 Fuji Film Microdevices Co Ltd 固体撮像素子、その制御方法およびそれを用いた固体撮像装置
JP3581073B2 (ja) * 2000-03-07 2004-10-27 シャープ株式会社 イメージセンサおよびその製造方法
JP2001257338A (ja) * 2000-03-09 2001-09-21 Iwate Toshiba Electronics Co Ltd 固体撮像素子
US7102680B2 (en) * 2000-03-13 2006-09-05 Olympus Corporation Image pickup device capable of adjusting the overflow level of the sensor based on the read out mode
JP2001291858A (ja) * 2000-04-04 2001-10-19 Sony Corp 固体撮像素子及びその製造方法
JP2002198507A (ja) * 2000-12-26 2002-07-12 Sony Corp 固体撮像素子
JP2003060192A (ja) * 2001-08-20 2003-02-28 Sony Corp 固体撮像装置の製造方法
JP3530159B2 (ja) * 2001-08-22 2004-05-24 松下電器産業株式会社 固体撮像装置およびその製造方法
JP4613821B2 (ja) * 2002-08-12 2011-01-19 ソニー株式会社 固体撮像素子及びその製造方法

Also Published As

Publication number Publication date
WO2004017411A1 (ja) 2004-02-26
KR20050048600A (ko) 2005-05-24
US20090194794A1 (en) 2009-08-06
CN100474607C (zh) 2009-04-01
JPWO2004017411A1 (ja) 2005-12-08
US8217431B2 (en) 2012-07-10
CN1685516A (zh) 2005-10-19
US20060163617A1 (en) 2006-07-27
TW200409351A (en) 2004-06-01
US7535038B2 (en) 2009-05-19
KR101016539B1 (ko) 2011-02-24
JP4613821B2 (ja) 2011-01-19

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