TWI265568B - A chemical mechanical polishing process for manufacturing semiconductor devices - Google Patents
A chemical mechanical polishing process for manufacturing semiconductor devicesInfo
- Publication number
- TWI265568B TWI265568B TW094114386A TW94114386A TWI265568B TW I265568 B TWI265568 B TW I265568B TW 094114386 A TW094114386 A TW 094114386A TW 94114386 A TW94114386 A TW 94114386A TW I265568 B TWI265568 B TW I265568B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor devices
- mechanical polishing
- chemical mechanical
- polishing process
- manufacturing semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000007517 polishing process Methods 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
- 239000002002 slurry Substances 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000005498 polishing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/964,145 US7232362B2 (en) | 2004-10-12 | 2004-10-12 | Chemical mechanical polishing process for manufacturing semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200612485A TW200612485A (en) | 2006-04-16 |
TWI265568B true TWI265568B (en) | 2006-11-01 |
Family
ID=36145954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094114386A TWI265568B (en) | 2004-10-12 | 2005-05-04 | A chemical mechanical polishing process for manufacturing semiconductor devices |
Country Status (3)
Country | Link |
---|---|
US (1) | US7232362B2 (zh) |
CN (1) | CN100353521C (zh) |
TW (1) | TWI265568B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101740330B (zh) * | 2008-11-17 | 2011-12-07 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨及通孔形成方法 |
CN102569170A (zh) * | 2010-12-29 | 2012-07-11 | 中芯国际集成电路制造(北京)有限公司 | 互连结构的制造方法 |
CN105619239A (zh) * | 2016-02-26 | 2016-06-01 | 上海华力微电子有限公司 | 防刮伤化学机械研磨装置及其化学机械研磨方法 |
US10957587B2 (en) * | 2018-07-31 | 2021-03-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and formation method of semiconductor device with conductive feature |
CN114683162B (zh) * | 2020-12-29 | 2023-09-12 | 中芯集成电路(宁波)有限公司 | 一种平坦化工艺方法 |
CN113782491B (zh) * | 2021-08-31 | 2024-01-23 | 上海华虹宏力半导体制造有限公司 | 接触孔的制作方法和结构 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6114766A (en) * | 1997-12-18 | 2000-09-05 | Advanced Micro Devices, Inc. | Integrated circuit with metal features presenting a larger landing area for vias |
US6573173B2 (en) * | 1999-07-13 | 2003-06-03 | Motorola, Inc. | Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process |
US6524959B1 (en) * | 2000-10-10 | 2003-02-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polish (CMP) planarizing method employing derivative signal end-point monitoring and control |
JP4573479B2 (ja) * | 2001-09-04 | 2010-11-04 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2003115488A (ja) * | 2001-10-03 | 2003-04-18 | Hitachi Ltd | 半導体装置の製造方法 |
US20040074518A1 (en) * | 2002-10-22 | 2004-04-22 | Texas Instruments Incorporated | Surfactants for post-chemical mechanical polishing storage and cleaning |
US7201784B2 (en) * | 2003-06-30 | 2007-04-10 | Intel Corporation | Surfactant slurry additives to improve erosion, dishing, and defects during chemical mechanical polishing of copper damascene with low k dielectrics |
US20050016861A1 (en) * | 2003-07-24 | 2005-01-27 | Thomas Laursen | Method for planarizing a work piece |
US6830504B1 (en) * | 2003-07-25 | 2004-12-14 | Taiwan Semiconductor Manufacturing Company | Barrier-slurry-free copper CMP process |
US20050090104A1 (en) * | 2003-10-27 | 2005-04-28 | Kai Yang | Slurry compositions for chemical mechanical polishing of copper and barrier films |
-
2004
- 2004-10-12 US US10/964,145 patent/US7232362B2/en not_active Expired - Fee Related
-
2005
- 2005-05-04 TW TW094114386A patent/TWI265568B/zh not_active IP Right Cessation
- 2005-06-03 CN CNB2005100732994A patent/CN100353521C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20060079154A1 (en) | 2006-04-13 |
TW200612485A (en) | 2006-04-16 |
US7232362B2 (en) | 2007-06-19 |
CN100353521C (zh) | 2007-12-05 |
CN1761047A (zh) | 2006-04-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |