TWI265557B - Critical dimension monitoring from latent image - Google Patents

Critical dimension monitoring from latent image

Info

Publication number
TWI265557B
TWI265557B TW091112605A TW91112605A TWI265557B TW I265557 B TWI265557 B TW I265557B TW 091112605 A TW091112605 A TW 091112605A TW 91112605 A TW91112605 A TW 91112605A TW I265557 B TWI265557 B TW I265557B
Authority
TW
Taiwan
Prior art keywords
light
latent image
collected
processes
gratings
Prior art date
Application number
TW091112605A
Other languages
English (en)
Inventor
Bhawar Singh
Michael K Templeton
Bharath Rangarajan
Ramkumar Subramanian
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of TWI265557B publication Critical patent/TWI265557B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70675—Latent image, i.e. measuring the image of the exposed resist prior to development

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
TW091112605A 2001-06-28 2002-06-11 Critical dimension monitoring from latent image TWI265557B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/893,807 US6561706B2 (en) 2001-06-28 2001-06-28 Critical dimension monitoring from latent image

Publications (1)

Publication Number Publication Date
TWI265557B true TWI265557B (en) 2006-11-01

Family

ID=25402129

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091112605A TWI265557B (en) 2001-06-28 2002-06-11 Critical dimension monitoring from latent image

Country Status (5)

Country Link
US (1) US6561706B2 (zh)
EP (1) EP1417540A2 (zh)
AU (1) AU2002238013A1 (zh)
TW (1) TWI265557B (zh)
WO (1) WO2003003123A2 (zh)

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US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US6980282B2 (en) * 2002-12-11 2005-12-27 Molecular Imprints, Inc. Method for modulating shapes of substrates
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
US6770852B1 (en) * 2003-02-27 2004-08-03 Lam Research Corporation Critical dimension variation compensation across a wafer by means of local wafer temperature control
US7452574B2 (en) * 2003-02-27 2008-11-18 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US7179396B2 (en) * 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) * 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7405032B1 (en) * 2003-08-21 2008-07-29 Advanced Micro Devices, Inc. Combination of non-lithographic shrink techniques and trim process for gate formation and line-edge roughness reduction
US8207532B2 (en) * 2003-09-12 2012-06-26 Taiwan Semiconductor Manufacturing Company Constant and reducible hole bottom CD in variable post-CMP thickness and after-development-inspection CD
US7090716B2 (en) * 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
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US7019835B2 (en) * 2004-02-19 2006-03-28 Molecular Imprints, Inc. Method and system to measure characteristics of a film disposed on a substrate
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7906180B2 (en) 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7449348B1 (en) * 2004-06-02 2008-11-11 Advanced Micro Devices, Inc. Feedback control of imprint mask feature profile using scatterometry and spacer etchback
US7785526B2 (en) 2004-07-20 2010-08-31 Molecular Imprints, Inc. Imprint alignment method, system, and template
US7566181B2 (en) * 2004-09-01 2009-07-28 Tokyo Electron Limited Controlling critical dimensions of structures formed on a wafer in semiconductor processing
US7099789B1 (en) * 2004-09-02 2006-08-29 Advanced Micro Devices, Inc. Characterizing distribution signatures in integrated circuit technology
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US7759136B2 (en) * 2006-03-29 2010-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Critical dimension (CD) control by spectrum metrology
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TWI521624B (zh) * 2009-02-18 2016-02-11 魯道夫科技股份有限公司 偏振成像技術
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EP3495888A1 (en) * 2017-12-06 2019-06-12 ASML Netherlands B.V. Method for controlling a lithographic apparatus and associated apparatuses
US10579764B2 (en) * 2018-06-06 2020-03-03 International Business Machines Corporation Co-modeling post-lithography critical dimensions and post-etch critical dimensions with multi-task neural networks

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Also Published As

Publication number Publication date
WO2003003123A2 (en) 2003-01-09
WO2003003123A3 (en) 2004-03-18
US20030002878A1 (en) 2003-01-02
EP1417540A2 (en) 2004-05-12
US6561706B2 (en) 2003-05-13
AU2002238013A1 (en) 2003-03-03

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