TWI265373B - High-sensitivity high-resolution photoresist for electron beam lithography - Google Patents

High-sensitivity high-resolution photoresist for electron beam lithography

Info

Publication number
TWI265373B
TWI265373B TW92124515A TW92124515A TWI265373B TW I265373 B TWI265373 B TW I265373B TW 92124515 A TW92124515 A TW 92124515A TW 92124515 A TW92124515 A TW 92124515A TW I265373 B TWI265373 B TW I265373B
Authority
TW
Taiwan
Prior art keywords
photoresist
electron beam
sensitivity
beam lithography
resolution photoresist
Prior art date
Application number
TW92124515A
Other languages
English (en)
Other versions
TW200405125A (en
Inventor
Oliver Kirch
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of TW200405125A publication Critical patent/TW200405125A/zh
Application granted granted Critical
Publication of TWI265373B publication Critical patent/TWI265373B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW92124515A 2002-09-20 2003-09-04 High-sensitivity high-resolution photoresist for electron beam lithography TWI265373B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2002143742 DE10243742B4 (de) 2002-09-20 2002-09-20 Verfahren zur Strukturierung von Halbleitersubstraten unter Verwendung eines Fotoresists

Publications (2)

Publication Number Publication Date
TW200405125A TW200405125A (en) 2004-04-01
TWI265373B true TWI265373B (en) 2006-11-01

Family

ID=32009850

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92124515A TWI265373B (en) 2002-09-20 2003-09-04 High-sensitivity high-resolution photoresist for electron beam lithography

Country Status (4)

Country Link
EP (1) EP1540421A1 (zh)
DE (1) DE10243742B4 (zh)
TW (1) TWI265373B (zh)
WO (1) WO2004029717A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10246546B4 (de) * 2002-09-30 2006-10-05 Infineon Technologies Ag Verwendung eines Resistsystems und Lithographieverfahren zur Herstellung von Halbleiterbauelementen
DE102004037527A1 (de) * 2004-07-29 2006-03-23 Infineon Technologies Ag Siliziumhaltiges Resistsystem für Lithographieverfahren

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR860002082B1 (ko) * 1983-01-19 1986-11-24 가부시기가이샤 도시바 레지스트 패턴의 형성 방법 및 장치
JP3001607B2 (ja) * 1989-04-24 2000-01-24 シーメンス、アクチエンゲゼルシヤフト 二層法における寸法安定な構造転写方法
EP0395917B1 (de) * 1989-04-24 1997-06-25 Siemens Aktiengesellschaft Photostrukturierungsverfahren
JP2688168B2 (ja) * 1992-11-03 1997-12-08 インターナショナル・ビジネス・マシーンズ・コーポレイション フォトレジストイメージ形成プロセス
KR100355254B1 (en) * 1993-02-15 2003-03-31 Clariant Finance Bvi Ltd Positive type radiation-sensitive mixture
JP3549592B2 (ja) * 1994-11-02 2004-08-04 クラリアント インターナショナル リミテッド 放射線感応性組成物
JP3808140B2 (ja) * 1996-09-10 2006-08-09 Ａｚエレクトロニックマテリアルズ株式会社 新規酸感応性基で保護されたヒドロキシスチレン重合体およびこれらを含む放射線感応性材料
US6284427B1 (en) * 1997-09-22 2001-09-04 Clariant Finance (Bvi) Limited Process for preparing resists
EP0919867B1 (de) * 1997-11-28 2003-05-21 Infineon Technologies AG Chemisch verstärkter Resist für die Elektronenstrahllithographie
JP3955384B2 (ja) * 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 化学増幅型レジスト組成物
EP0957399B1 (de) * 1998-04-24 2004-02-18 Infineon Technologies AG Strahlungsempfindliches Gemisch und dessen Verwendung
US6927009B2 (en) * 2001-05-22 2005-08-09 Fuji Photo Film Co., Ltd. Positive photosensitive composition
DE10208448A1 (de) * 2002-02-27 2003-09-11 Infineon Technologies Ag Lithografieverfahren zur Verringerung des lateralen Chromstrukturverlustes bei der Fotomaskenherstellung unter Verwendung chemisch verstärkter Resists
DE10208754B4 (de) * 2002-02-28 2007-03-01 Infineon Technologies Ag Polymermaterial mit niedriger Glastemperatur für die Anwendung in chemisch verstärkten Fotoresists für die Halbleiterfertigung

Also Published As

Publication number Publication date
EP1540421A1 (de) 2005-06-15
WO2004029717A1 (de) 2004-04-08
TW200405125A (en) 2004-04-01
DE10243742B4 (de) 2007-11-08
DE10243742A1 (de) 2004-04-15
WO2004029717B1 (de) 2004-05-27

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees