TWI264640B - Method and apparatus for implicit dram precharge - Google Patents
Method and apparatus for implicit dram prechargeInfo
- Publication number
- TWI264640B TWI264640B TW093114530A TW93114530A TWI264640B TW I264640 B TWI264640 B TW I264640B TW 093114530 A TW093114530 A TW 093114530A TW 93114530 A TW93114530 A TW 93114530A TW I264640 B TWI264640 B TW I264640B
- Authority
- TW
- Taiwan
- Prior art keywords
- implicit
- dram precharge
- precharge
- dram
- memory device
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/676,882 US7167946B2 (en) | 2003-09-30 | 2003-09-30 | Method and apparatus for implicit DRAM precharge |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200521674A TW200521674A (en) | 2005-07-01 |
TWI264640B true TWI264640B (en) | 2006-10-21 |
Family
ID=34377477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093114530A TWI264640B (en) | 2003-09-30 | 2004-05-21 | Method and apparatus for implicit dram precharge |
Country Status (8)
Country | Link |
---|---|
US (1) | US7167946B2 (zh) |
EP (1) | EP1668646B1 (zh) |
JP (1) | JP4704345B2 (zh) |
CN (1) | CN1853238B (zh) |
AT (1) | ATE513296T1 (zh) |
RU (1) | RU2331118C2 (zh) |
TW (1) | TWI264640B (zh) |
WO (1) | WO2005034133A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI418987B (zh) * | 2008-06-30 | 2013-12-11 | Intel Corp | 藉由細微間隔之預充電管理使記憶體處理量增加之技術 |
TWI746009B (zh) * | 2019-07-18 | 2021-11-11 | 美商美光科技公司 | 記憶體子陣列之平行存取 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070130374A1 (en) * | 2005-11-15 | 2007-06-07 | Intel Corporation | Multiported memory with configurable ports |
US7673111B2 (en) * | 2005-12-23 | 2010-03-02 | Intel Corporation | Memory system with both single and consolidated commands |
US7990737B2 (en) | 2005-12-23 | 2011-08-02 | Intel Corporation | Memory systems with memory chips down and up |
US20070150667A1 (en) * | 2005-12-23 | 2007-06-28 | Intel Corporation | Multiported memory with ports mapped to bank sets |
US7349233B2 (en) * | 2006-03-24 | 2008-03-25 | Intel Corporation | Memory device with read data from different banks |
US7761656B2 (en) * | 2007-08-22 | 2010-07-20 | Advanced Micro Devices, Inc. | Detection of speculative precharge |
US8601205B1 (en) * | 2008-12-31 | 2013-12-03 | Synopsys, Inc. | Dynamic random access memory controller |
US9042198B2 (en) * | 2013-03-21 | 2015-05-26 | Yutaka Shirai | Nonvolatile random access memory |
US9021154B2 (en) | 2013-09-27 | 2015-04-28 | Intel Corporation | Read training a memory controller |
KR20160016126A (ko) * | 2014-08-04 | 2016-02-15 | 에스케이하이닉스 주식회사 | 뱅크 제어 회로 및 이를 포함하는 반도체 메모리 장치 |
US9600183B2 (en) | 2014-09-22 | 2017-03-21 | Intel Corporation | Apparatus, system and method for determining comparison information based on memory data |
US9530468B2 (en) | 2014-09-26 | 2016-12-27 | Intel Corporation | Method, apparatus and system to manage implicit pre-charge command signaling |
US10497438B2 (en) * | 2017-04-14 | 2019-12-03 | Sandisk Technologies Llc | Cross-point memory array addressing |
CN116913343B (zh) * | 2023-09-13 | 2023-12-26 | 浙江力积存储科技有限公司 | 一种激活预充电反馈电路和存储器 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5301278A (en) * | 1988-04-29 | 1994-04-05 | International Business Machines Corporation | Flexible dynamic memory controller |
JP2988804B2 (ja) * | 1993-03-19 | 1999-12-13 | 株式会社東芝 | 半導体メモリ装置 |
US5539696A (en) * | 1994-01-31 | 1996-07-23 | Patel; Vipul C. | Method and apparatus for writing data in a synchronous memory having column independent sections and a method and apparatus for performing write mask operations |
US5544306A (en) * | 1994-05-03 | 1996-08-06 | Sun Microsystems, Inc. | Flexible dram access in a frame buffer memory and system |
US5634112A (en) * | 1994-10-14 | 1997-05-27 | Compaq Computer Corporation | Memory controller having precharge prediction based on processor and PCI bus cycles |
US6505282B1 (en) * | 1994-11-30 | 2003-01-07 | Intel Corporation | Method and apparatus for determining memory types of a multi-type memory subsystem where memory of the different types are accessed using column control signals with different timing characteristics |
USRE36532E (en) * | 1995-03-02 | 2000-01-25 | Samsung Electronics Co., Ltd. | Synchronous semiconductor memory device having an auto-precharge function |
US5636173A (en) * | 1995-06-07 | 1997-06-03 | Micron Technology, Inc. | Auto-precharge during bank selection |
JPH0963264A (ja) * | 1995-08-18 | 1997-03-07 | Fujitsu Ltd | 同期型dram |
US6145065A (en) * | 1997-05-02 | 2000-11-07 | Matsushita Electric Industrial Co., Ltd. | Memory access buffer and reordering apparatus using priorities |
US6269433B1 (en) * | 1998-04-29 | 2001-07-31 | Compaq Computer Corporation | Memory controller using queue look-ahead to reduce memory latency |
US6378056B2 (en) * | 1998-11-03 | 2002-04-23 | Intel Corporation | Method and apparatus for configuring a memory device and a memory channel using configuration space registers |
US6539440B1 (en) | 1998-11-16 | 2003-03-25 | Infineon Ag | Methods and apparatus for prediction of the time between two consecutive memory accesses |
US6453370B1 (en) * | 1998-11-16 | 2002-09-17 | Infineion Technologies Ag | Using of bank tag registers to avoid a background operation collision in memory systems |
DE69939152D1 (de) | 1999-01-11 | 2008-09-04 | Sgs Thomson Microelectronics | Speicherschnittstellenvorrichtung und Verfahren zum Speicherzugriff |
US6330636B1 (en) * | 1999-01-29 | 2001-12-11 | Enhanced Memory Systems, Inc. | Double data rate synchronous dynamic random access memory device incorporating a static RAM cache per memory bank |
KR100297193B1 (ko) | 1999-04-27 | 2001-10-29 | 윤종용 | 리던던트 로우 대체 구조를 가지는 반도체 메모리 장치 및 그것의 로우 구동 방법 |
US6453401B1 (en) * | 1999-07-02 | 2002-09-17 | Rambus Inc. | Memory controller with timing constraint tracking and checking unit and corresponding method |
US6470433B1 (en) * | 2000-04-29 | 2002-10-22 | Hewlett-Packard Company | Modified aggressive precharge DRAM controller |
US6535966B1 (en) | 2000-05-17 | 2003-03-18 | Sun Microsystems, Inc. | System and method for using a page tracking buffer to reduce main memory latency in a computer system |
US6477108B2 (en) | 2000-09-01 | 2002-11-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device including memory with reduced current consumption |
US6747912B1 (en) * | 2002-12-31 | 2004-06-08 | Intel Corporation | Implied precharge and posted activate command to reduce command bandwidth |
-
2003
- 2003-09-30 US US10/676,882 patent/US7167946B2/en active Active
-
2004
- 2004-05-21 TW TW093114530A patent/TWI264640B/zh not_active IP Right Cessation
- 2004-09-29 RU RU2006114769/09A patent/RU2331118C2/ru not_active IP Right Cessation
- 2004-09-29 AT AT04789296T patent/ATE513296T1/de not_active IP Right Cessation
- 2004-09-29 EP EP04789296A patent/EP1668646B1/en active Active
- 2004-09-29 WO PCT/US2004/032056 patent/WO2005034133A1/en active Application Filing
- 2004-09-29 JP JP2006534070A patent/JP4704345B2/ja not_active Expired - Fee Related
- 2004-09-29 CN CN2004800271506A patent/CN1853238B/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI418987B (zh) * | 2008-06-30 | 2013-12-11 | Intel Corp | 藉由細微間隔之預充電管理使記憶體處理量增加之技術 |
TWI746009B (zh) * | 2019-07-18 | 2021-11-11 | 美商美光科技公司 | 記憶體子陣列之平行存取 |
Also Published As
Publication number | Publication date |
---|---|
EP1668646A1 (en) | 2006-06-14 |
CN1853238B (zh) | 2010-05-05 |
WO2005034133A1 (en) | 2005-04-14 |
JP4704345B2 (ja) | 2011-06-15 |
US7167946B2 (en) | 2007-01-23 |
ATE513296T1 (de) | 2011-07-15 |
TW200521674A (en) | 2005-07-01 |
US20050071541A1 (en) | 2005-03-31 |
RU2006114769A (ru) | 2007-11-20 |
RU2331118C2 (ru) | 2008-08-10 |
CN1853238A (zh) | 2006-10-25 |
EP1668646B1 (en) | 2011-06-15 |
JP2007507831A (ja) | 2007-03-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI264640B (en) | Method and apparatus for implicit dram precharge | |
AU2003260120A1 (en) | One transistor dram cell structure and method for forming | |
WO2006069356A3 (en) | A method, apparatus, and system for partial memory refresh | |
TW200641891A (en) | System and method for hidden-refresh pate modification | |
TW200705165A (en) | System and method of coherent data transfer during processor idle states | |
TW200710871A (en) | Memory device and tracking circuit | |
GB2473348A (en) | Apparatus and method for multi-level cache utilization | |
TW200720934A (en) | System and method to increase DRAM parallelism | |
TW200717665A (en) | Memory with split gate devices and method of fabrication | |
TW200731285A (en) | Active cycle control circuit and method for semiconductor memory apparatus | |
TW200611276A (en) | De-coupled memory access system and method | |
WO2010039390A3 (en) | Solid state storage device controller with expansion mode | |
IL205516A0 (en) | Method and system for providing directed bank refresh for volatile memories | |
WO2005093836A3 (en) | Semiconductor constructions having a buried bit line, and methods of forming same | |
WO2005022341A8 (en) | Flash memory distribution of digital content | |
EP2038891A4 (en) | MEMORY WITH SELECTIVE PRE-LOAD | |
TW200739585A (en) | Semiconductor memory device | |
ATE528763T1 (de) | System und verfahren zur verringerung des dynamischen ram-energieverbrauchs durch verwenden von gültigen datenmarkern | |
TW200620314A (en) | Isolation control circuit and method for a memory device | |
TW200729211A (en) | Memory devices including floating body transistor capacitorless memory cells and related methods | |
AU2003293923A1 (en) | Fin field effect transistor memory cell, fin field effect transistor memory cell arrangement, and method for the production of a fin field effect transistor memory cell | |
AU2003288683A1 (en) | Reliable storage medium access control method and device | |
TW200701056A (en) | Transmission device performing dma transmission, semiconductor integrated circuit device and data transmission method | |
EP2237280A3 (en) | Method for mitigating imprint in a ferroelectric memory | |
TW200511313A (en) | Non-refresh four-transistor memory cell |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |