TWI263798B - Optical shaping device - Google Patents

Optical shaping device Download PDF

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Publication number
TWI263798B
TWI263798B TW93136882A TW93136882A TWI263798B TW I263798 B TWI263798 B TW I263798B TW 93136882 A TW93136882 A TW 93136882A TW 93136882 A TW93136882 A TW 93136882A TW I263798 B TWI263798 B TW I263798B
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TW
Taiwan
Prior art keywords
light
laser
exposure
optical
dmd
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TW93136882A
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Chinese (zh)
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TW200528754A (en
Inventor
Hiromi Ishikawa
Kazuhiko Nagano
Yoji Okazaki
Takeshi Fujii
Hiromitsu Yamakawa
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Fuji Photo Film Co Ltd
Fujinon Corp
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Priority claimed from JP2002149885A external-priority patent/JP2003340923A/en
Priority claimed from JP2002149886A external-priority patent/JP4731787B2/en
Priority claimed from JP2002149884A external-priority patent/JP2003340924A/en
Priority claimed from JP2002199091A external-priority patent/JP2004042143A/en
Priority claimed from JP2002199092A external-priority patent/JP2004043981A/en
Application filed by Fuji Photo Film Co Ltd, Fujinon Corp filed Critical Fuji Photo Film Co Ltd
Publication of TW200528754A publication Critical patent/TW200528754A/en
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Publication of TWI263798B publication Critical patent/TWI263798B/en

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Abstract

This invention is to provide a high speed shape formed optical shaping device and a high precision optical shaping device. At the DMD50 used in exposure head, in main scan direction there are 800 quantities of micro mirrors disposed in a micro mirror row and there are 600 rows of them disposed in side scan direction, using a control unit to control only part of micro mirror rows (for example: 800x100 rows) to be driven. The data processing speed of DMD 50 has its own limit. The modulation speed of each line is in proportional to the pixel numbers to be used. Thus, merely using part of micro mirror rows makes the modulation speed of every line sooner.

Description

1263798 九、發明說明: 【發明所屬之技術領域】 本發明係有關光成型裝置,特別是有關因應畫像資料以由 @間光:調變元件所調變的光束將光硬化性樹脂曝光而成型3 維模型之光成型裝置。 【先前技術】 近年來伴隨著3維CAD (電腦輔助設計)系統的普及,係 利用光成型系統,其依據由3維CAD作成在電腦上的假想空 間之3維形狀,再依CAD資料以光束將光硬化性樹脂曝光而 成型3維模型之。在此光成型系統中,在電腦上將CAD資料 以指定間隔切割再作成複數個斷面資料,依據各斷面資料以 雷射光掃描液狀的光硬化性樹脂之表面使硬化成層狀,再將 樹脂硬化層依序積層以成型3維模型。以光成型方法而言, 係事前在上方開放型的糟內貯留液狀的光硬化性樹脂,再使 配置在接近光硬化性樹脂的液面之成型台,依序由樹脂的自 由液面沈下再將樹脂硬化層積層之自由液面法係廣範地爲人 所知悉。 以往,在此光成型系統所使用的光成型裝置係具有如「九 谷洋二:光成型系統之基礎、現狀、問題點、模型技術、第 7卷第10號,PP18-23,1 992」所示之依雷射繪圖器方式來 執行掃描及依可動鏡方式來執行掃描者。 茲以第 28圖來表示雷射繪圖器方式的光成型裝置。此裝 置中,由雷射光源2 50所振盪之雷射光係通過具備有遮板252 的光纖2 5 4而到達XY繪圖器2 5 6,再由XY繪圖器2 5 6照射 1263798 到容器260內的光硬化性樹脂262之液面2 66。又,藉由具 備有X定位機構2 5 8 a和Y定位機構2 5 8 b之XY定位機構2 5 8 以控制X Y繪圖器2 5 6的X方向,Y方向的位置。因此藉由使 XY繪圖器256 —邊移動於X方向,Y方向,一邊藉由遮板252 因應斷面資料把由XY繪圖器2 5 6所照射的雷射光作開啓、 關閉控制,係可硬化液面2 6 6之指定部分的光硬化性樹脂 262 ° 然而,在依雷射繪圖器方式的光成型裝置中,在遮板速度或 繪圖器之移動速度上係有限度,具有成型上需要長時間之問 題。 接著,以第 29圖來表示以往依使用有電流計鏡的可動鏡 方式之光成型裝置。在此裝置中,雷射光270係被X軸旋轉 鏡272、Y軸旋轉鏡274所反射而被照射在光硬化性樹脂 262。X軸旋轉鏡272係以Z軸爲旋轉軸旋轉以控制照射位 置之X方向的位置,Y軸旋轉鏡274係以X軸爲旋轉軸而旋 轉,以控制照射位置之Y方向的位置。在此可動鏡方式中,相 較於雷射繪圖器方式,係可提升掃描速度。 然而,在依可動鏡方式的光成型裝置中,由於係以微小的雷 射光點作掃描,所以即使執行例如2〜1 2m/ s的高速掃 描,10cm立方程度的3維模型在成型上需要8〜24小時的時 間,在成型上係需要長時間。又,雷射光270係僅於Y軸旋轉 鏡274在指定範圍的角度入射時被反射,所以照射區域被限 定於是,爲了放大照射區域,當將Y軸旋轉鏡2 7 4配置在偏離 光硬化性樹脂262之高的位置時,係具有雷射光點的直徑變 1263798 大使定位精度變差且成型精度降低的問題。又,在使γ軸旋 轉鏡2 7 4之旋轉角度加大時,照射範圍雖然會放大,但是同樣 地定位精度變差,正畸變(pincushionerror)會增加。再者, 於使用有電流計鏡的光成型裝置上也具有應變補正或光軸調 整等之光學系統的調整複雜且光學系統複雜、裝置全體大型 化之問題。 此外,在依任何方式的光成型裝置,以雷射光源來說係使用 高輸出之紫外線雷射光源,以往一般爲依氬氣雷射等氣體雷 射或依HG (第3高諧波)的固體雷射,氣體雷射係在管之交 換等的維修麻煩,再加上高價且光成型裝置的價格提高,必需 冷卻用冷卻器等之附帶設備所以裝置整體係大型化。於THG 固體雷射中,在於Q開關的脈波動作係反複速度慢,不適用在 高速曝光。又,因使用THG光使波長變換效率變差而不能高 輸出化,再加上作爲激勵半導體雷射者必需使用高輸出,所以 成爲非常高成本者。 有鑑於此問題,在日本專利特開平1 1 一 1 3 8 6 4 5號公報中係 揭示一種光成型裝置,其具備有複數個能以較單一之畫素還 大的尺寸的光點來照射曝光區域的光源,依複數個光源將畫 素多重曝光。此裝置中,依複數個光源將畫素多重曝光,所以 即使各個光源之輸出爲小,也可將平價的發光二極體(LED ) 作爲光源來使用。 然而,在日本專利特開平1 1 - 1 3 86 4 5號公報所記載之光成 型裝置中,各光源之光點尺寸係各單一的畫素還大,所以在高 精細的成型上不能使用,且依複數個光源將畫素作多重曝光, -8 - 1263798 所以在動作上浪費甚多,也具有成型上需要長時間之問題。 另外,因爲光源數增加,也具有所謂之曝光部大型化的問題。 再者,即使以LED的輸出光量作多重曝光也具有不能獲得充 分的分辨率之虞。 本發明係有鑑於上述先前技術的問題點而成者,本發明之 目的爲提供一可高速成型的光成型裝置。又,本發明之其他 目的係提供一可高精細成型的光成型裝置。 【發明内容】 【解決課題之手段】 爲達成上述目的,本發明之光成型裝置之特徵爲具備有: 成型槽,收容光硬化性樹脂;支持台,用以支持在該成型槽 內以可昇降地設置的成型物;曝光頭,包含有:雷射裝置, 照射雷射光;空間光調變元件,在基板上以2維狀配列有對 應各自控制信號可變化光調變狀態之多數個畫素部,用以調 變由該雷射裝置所照射之雷射光;控制手段,利用對應曝光 資訊所生成之控制信號,控制比配列在該基板上之畫素部的 全部個數還少個數之複數個畫素部;光學系統,把在各畫素 部調變之雷射光成像於被收容在該成型槽之光硬化性樹脂的 液面;及移動手段,使該曝光頭對該光硬化性樹脂之液面作 相對移動。 在本發明之光成型裝置中,藉由把在曝光頭之空間光調 變元件之各畫素部調變的雷射光成像於被收容在該成型糟之 光硬化性樹脂的液面,同時利用移動手段把該曝光頭對該光 硬化性樹脂之液面作相對移動,以將收納在成型槽的光硬化 -9 一 1263798 性樹脂的液面掃描曝光。被曝光之樹脂係硬化產生硬化樹脂 層。將硬化樹脂層形成1層之後,使用來支持成型物之設置 在成型槽內的支持台下降而形成新的樹脂表面,同樣地形成 次一硬化樹脂層。如此一來,反覆樹脂的硬化和降下支持台 使硬化樹脂層依序積層以成型3維模型。 本發明之光成型裝置中,有關曝光頭之空間光調變元件,係 依因應曝光資訊所生成之控制信號,以控制比配列在其基板 上之畫素部的全部個數還少個數之複數個畫素部各自。亦即, 並非控制配列在基板上之畫素部全部,而係控制一部分的畫 素部。因此,要控制之畫素部的個數變少,控制信號的轉送速 度係變得比轉送全部的畫素部之控制信號時還短。依此可加 快調變速度而成爲可高速成型。 在上述之光成型裝置中,由該控制手段所控制的畫素部係, 對應指定方向之方向的長度爲比與該指定方向交叉的方向之 長度還長的區域所包含的畫素部係較佳。藉由使用在雷射裝 置之發光點配列方向之長區域的畫素部,可減少要使用之曝 光頭數。 又,在上述之光成型裝置中,該雷射裝置係可構成爲具備 有把由光纖的入射端入射之雷射光由其出射端出射之複數光 纖光源,且該複數光纖光源之出射端中的發光點各自以1維 或2維陣列狀配列成光纖陣列光源。又,以在該複數個光纖 光源之出射端中之發光點各自作束狀配列的光纖束光源來構 成也可以。藉由陣列化或束化而可圖謀高輸出化。以該光纖 而言,較佳爲使用核心直徑爲均一且出射端的包層直徑係較 -1 0 - 1263798 入射端的包層直徑還小的光纖。 以構成光纖陣列光源等之各光纖光源而言,將雷射光合波 而入射至光纖的合波雷射光源較佳。藉由合波雷射光源,可 獲得高亮度,高輸出。又,因用以獲得相同光輸出之陣列化的 光纖條數不需多就可解決,所以成本低。再者,因爲光纖之條 數少,所以在陣列化之際的發光區域係變更小(高亮度化)。 由於使用前述之包層直徑小的光纖,所以陣列化之際的發光 區域係變更小而可高亮度化。即使在部分地使用空間光調變 元件之場合,藉由使用高亮度的光纖陣列光源或光纖束光 源,可對使用部分有效率地照射雷射光,特別是對空間調變元 件之照明NA係可變小,可把通過空間調變元件後之成像光束 的焦點深度取深,可以高光密度照射雷射光。依此,高速且高 精細的曝光、成型係成爲可能。例如,1 // m等級之微細形狀 的成型也可能。 例如,光纖光源可以如下所構成:複數半導體雷射;複數半 導體雷射;1條光纖;以及集光光學系統,把由該複數半導體 雷射之各自出射的雷射光束予以集光,且使集光束結合至該 光纖入射端。又,光纖光源也可由如下所構成:具備複數發光 點之多腔雷射;1條光纖;以及集光光學系統,把由該複數發 光點之各自出射的雷射光束予以集光,且使集光束結合至該 光纖入射端。再者,把由複數之多腔雷射的發光點之各自 出射的雷射光束予以集光再結合至1條光纖也可以。 以上述光成型裝置所使用的空間調變元件而言,可以使用 在基板上以2維狀配列有因應各個控制信號可變更反射面角 一 1 1 一 1263798 度之多數個微鏡所構成之數位微鏡裝置(dmd )、或在基板上 以2維狀配列有因應各個控制信號可遮斷透過光之多數個液 晶胞所構成之液晶遮板陣列。如同DMD、藉由使用具備多數 個晝素部之空間光調變元件、在多數的通道曝光,以防止功 率分散、熱應變。 以使用在上述的光成型裝置之雷射裝置而言,照射波長 3 50〜4 50nm之雷射光係較佳。例如,藉由在半導體雷射使 用GaN系半導體雷射,可構成照射波長3 5 0〜4 5 0nm的雷射光 之雷射裝置。藉由使用波長3 50〜450nm的雷射光,與使用紅 外線波長區域的雷射光之場合相較下,係可使光硬化性樹脂 的光吸收率大幅地增加。波長3 50〜4 50nm的雷射光係短波 長,所以光子能量大,變換爲熱能係容易。如此一來,波長3 5 0 〜45 0nm之雷射光係光吸收率大,變換爲熱能係容易,所以光 硬化性樹脂的硬化,亦即可高速地進行成型。雷射光之波 長帶域係350〜420nm爲佳。以利用低成本的GaN系半導體 雷射這點而言,波長40 5 nm係特別好。 此外,上述的光成型裝置係可構成爲具備複數個曝光頭之 多頭式光成型裝置。藉由多頭式化更可謀求成型的高速化。 【實施方式】 〔光成型裝置之構成〕 有關本發明之實施形態的光成型裝置係如第1圖所示,具 有在上方開口的容器156,在容器156內係收容有液狀的光 硬化性樹脂150。又,在容器156內配置有平板狀之昇降載 物台1 5 2,此昇降載物台1 5 2係由配置在容器1 5 6外之支持 - 12- 1263798 部1 5 4所支持著。支持部1 5 4係設置有公螺旋部1 5 4 A,此公 螺旋部1 5 4 A係與依未圖示的驅動馬達而可旋轉之導螺桿1 5 5 螺合。伴隨著此導螺桿1 5 5的旋轉,昇降載物台1 5 2係被昇 降。 在容器1 5 6內所收容之光硬化性樹脂1 5 2的液面上方,箱 狀的掃描器162係配置成使其長度方向朝容器156的寬度方 向。掃描器1 62係由安裝在寬度方向的兩側面之2根支持臂 1 60所支持。此外,掃描器1 62係連接在未圖示之用以控制 其之控制器。 又,在容器1 56之長度方向的兩側面,係各自設置有在副掃 描方向延伸的導引部158。2根支持臂160的下端部係在此 導引部1 5 8,以沿著副掃描方向可往復移動地安裝著。此外, 在此光成型裝置係設置有未圖示之用以將支持臂1 60連同掃 描器162 —起沿著導引部158驅動之驅動裝置。 掃描器1 62係如第2圖所示,(例如,3行5列)具備有呈 略矩陣狀配列之複數個(例如1 4個)曝光頭1 6 6。在此例 中,因爲與容器156之寬度方向寬度之關係,在第3行係配置 了 4個曝光頭166。此外,在表示配置在第m行之第n列的 各個曝光頭時,係表示成曝光頭166mn。 依曝光頭1 6 6的曝光區域1 6 8係以副掃描方向爲短邊的矩 形狀。因此,伴隨著掃描器1 6 2之移動,在光硬化性樹脂1 5 2 的液面係形成各曝光頭166帶狀的已曝光區域(硬化區域) 1 70。此外,在要表示依配列在第m行之第n列之各個曝光頭 所形成之曝光區域時,係表示爲曝光區域168 mn。 1263798 又,如第3(A)圖及3(B)圖所示,帶狀之已曝光區域170 係無間隙地在與副掃描方向正交的方向排列,線狀配列之各 行的曝光頭各自係在配列方向以指定間隔(曝光區域之長邊 的自然數倍,本實施形態中爲2倍)偏移而配置著。因此,在 第1行的曝光區域168η和曝光區域168 12之間之不能曝光 的部分係可依第2行之曝光區域1 6 8 21和第3行的曝光區域 1 6 8 31而曝光。 曝光頭166^-16 6^係各自如第4,5(Α)及5(B)圖 所示,具備數位微鏡裝置(DMD ) 5 0以作爲因應畫像資料把 入射光束因應畫像資料而對各畫素作調變之空間光調變元 件。此DMD50係連接在未圖示之具有資料處理部和鏡驅動控 制部之控制器上。此控制器之資料處理部係依據輸入的畫像 資料,生成用以對各曝光頭166之DMD50之應控制區域內 的各微鏡驅動控制之控制信號。此外有關要控制的區域係在 後面加以敘述。 在DMD5 0的光入射側係以如下之順序配置即:備有光纖的 出射端部(發光點)沿著與曝光區域1 68之長邊方向對應之 方向成一列配列的雷射出射部之光纖陣列光源66 ;把由光纖 陣列光源66所出射之雷射光作補正且使集光於DMD上之透 鏡系67 ;以及將透射透鏡系67的雷射光朝DMD50反射之鏡 69 ° 透鏡系6 7,係由使光纖陣列光源6 6所出射的雷射光平行 光化之1對組合透鏡7 1、使被平行光化的雷射光之光量分 布成爲均一般而加以補正之1對組合透鏡7 3、以及把光量 一 14- 1263798 分布被補正的雷射光集光於DMD上之集光透鏡75所構成。 組合透鏡7 3係具備有,對雷射出射端之配列方向,接近透鏡 的光軸之部分爲擴大光束且離開光軸的部分係光束縮減,且 在與此配列方向正交的方向使光照其原樣通過之機能,使光 量分布成爲均一般地補正雷射光。 又,在DMD50的光反射側配置有使在DMD50反射的雷射光 成像於感光材料150的掃描面(被曝光面)56上之透鏡系54、 58。透鏡系54及58係配置成使DMD50和被曝光面56成爲 共軛的關係。 DMD50係如第6圖所示,在SRAM胞(記憶體胞)60上,微 小鏡(微鏡)62係由支柱所支持而配置者,係使構成畫素 (PIXEL )之多數個(例如,600個X 800個)微小鏡以格子 狀配列所構成之鏡裝置。各畫素之最上部係設置有由支柱所 支持的微鏡62,微鏡62的表面係蒸鍍有鋁等之反射率高的 材料。此外,微鏡62的反射率係90%以上。且在微鏡62的 正下係透過包含有鉸鏈及軛架的支柱配置有在通常的半導體 記憶體之生產線所製造之矽閘門的CMOS之SRAM胞60,全體 係構成爲整塊(一體型)。 當DMD50的SRAM胞60被寫入數位信號時,則由支柱所支 撐的微鏡62係以對角線爲中心,被以相對於配置有DMD50的 基板側,以α度(例如± 1 〇度)的範圍傾斜。第7 ( A )圖係 表示微鏡6 2在開啓狀態之傾斜在+ α度的狀態,第7 ( B ) 圖係微鏡6 2在關閉狀態之傾斜在-α度的狀態。因此,因應 畫像信號,藉由把在D M D 5 0之各晝素的微鏡6 2之傾斜控制 1263798 成如第6圖,則入射至DMD50的光係朝各自的微鏡62之傾斜 方向反射。 又,第6圖係放大DMD50之一部分,表示微鏡62係被控 制+ α度或一 α度之一狀態例。各自的微鏡6 2之開啓、關 閉控制係由連接在DMD 5 0之未圖示的控制器所執行。此外, 在依關閉狀態的微鏡6 2、光束會被反射之方向上係配置有 光吸收體(未圖示)。 又,DMD50係配置成其短邊與副掃描方向成指定角度0 (例 如,1 °〜5 ° )般地稍微傾斜者爲較佳。第8 ( a )圖係表示 不使DMD5 0傾斜時之依各微鏡的反射光像(曝光束)53之 掃描軌跡,第8 ( B )圖係使DMD5 0傾斜時之曝光束5 3的掃 描軌跡。 在DMD50中,於長度方向配置有多數個微鏡(例如,800個) 之微鏡列係在寬度方向配置有多數組(例如,6 〇 〇組),如第 8(B)圖所示,藉由傾斜DMD50,使得依各微鏡的曝光束53 之掃描軌跡(掃描線)的間距p i係變得比不傾斜DMD 5 0時 之掃描線的間距P2還狹小,可使解像度大幅地提升。一方面, 因爲DMD50之傾斜角微小之故,所以使DMD50傾斜時之掃描 寬度W2和使DMD50不傾斜時之掃描寬度W1係略相同。 又,依不同的微鏡列、相同掃描線上係成爲重疊被曝光(多 重曝光)。如此,藉由被多重曝光,而可控制曝光位置的微少 量’可實現高精細的曝光。又,藉由微少量的曝光位置控制等 之數位畫像處理,可無段差地把配列在主掃描方向之複數個 曝光頭間之連接處予以連繋。 - 1 6 - 1263798 此外,取代DMD 5 0之傾斜,而改以使各微鏡列在與副掃描方 向正交的方向,以指定間隔偏移作棋盤狀配置,也可獲得同樣 的效果。 光纖陣列光源6 6,係如第9 ( A )圖所示,具備複數(例如,6 個)個雷射模組64,各雷射模組64係結合在多模光纖30之 一端。多模光纖3 0之他端係結合有核心直徑爲與多模光纖 30相同且包層直徑較多模光纖30小的光纖31,如第9(C) 圖所示,光纖3 1的出射端部(發光點)係沿著與副掃描方向 正交的主掃描方向配置1列而構成雷射出射部68。此外,如 第9 ( D )圖所示,也可把發光點沿著主掃描方向成2列地配 列。 光纖3 1之出射端部係如第9 ( B )圖所示,表面係被平坦 的2片支持板6 5挾住而固定著。又,光纖3 1之光出射側係 配置有玻璃等之透明的保護板6 3,以保護光纖3 1之端面。 保護板63也可與光纖31的端面密接配置,也可使光纖31之 端面被密封般地配置。光纖31之出射端部雖然光密度且容 易集塵而劣化,但是藉由配置保護板6 3,不但可防止塵埃對 端面之附著同時可延緩劣化。 在本例中,爲了將包層直徑小的光纖3 1之出射端無間隙地 配列成1歹ij,在以包層直徑大的部分鄰接的2條多模光纖3 0 之間將多模光纖30聚集,而被聚集的多模光纖30所結合之 光纖3 1的出射端,係配列成被挾於以包層直徑爲大的部分鄰 接之2條多模光纖30所結合的光纖3 1之2個出射端之間。 這樣的光纖,例如第1 0圖所示,係藉由在包層直徑爲大的 - 1 7 - 1263798 多模光纖30之雷射光出射側的前端部分,將長度1〜3Qcm之 包層直徑爲小的光纖31予以同軸地結合而可獲得。2條的 光纖係光纖3 1之入射端面在多模光纖30之出射端面以兩光 纖的中心軸呈一致般地熔接而被結合著。如同上述,光纖3 1 之核心3 1 a的直徑係與多模光纖3 0之核心3 0 a的直徑相同 大小。 又,也可以使長度爲短包層直徑爲大的光纖中熔接有包層 直徑爲小的光纖之短尺寸光纖,經由一套圏或光連接器等而 結合至多模光纖3 0之出射端。藉由利用連接器等以可裝卸 地結合,以在包層直徑爲小的光纖破損時等場合,使前端部 分的交換變成容易,可減低曝光頭的維修所要之成本。此外, 以下有時把光纖3 1稱爲多模光纖30之出射端部。 以多模光纖30及光纖31而言,也可以是STEP INDEX型光 纖、GRATED INDEX型光纖、及複合型光纖之中任一。例如, 可使用由三菱電線工業株式會社所製造的STEP INDEX型光 纖。在本實施形態中,多模光纖30及光纖31係STEP INDEX 型光纖,多模光纖30係包層直徑二125/z m、核心直徑=25/z m、ΝΑ =0.2、入射端面塗層的透過率= 99· 5%以上,光纖31 係包層直徑二60//m、核心直徑= 25//m、ΝΑ=0.2。 一般,以紅外線區域的雷射光而言,若光纖的包層直徑設定 小則傳送損失會增加。因此,係因應雷射光之波長帶域以決 定合適的包層直徑。然而,波長越短傳送損失係變少,以由 GaN系半導體雷射所出射的波長40 5nm之雷射光而言,即使 包層的厚度{(包層直徑-核心直徑)/2 }爲傳送800nm之波 1263798 長帶域的紅外光時之1 / 2左右、或爲傳送通信用之1 . 5 // m 之波長頻帶的紅外光時之約1 / 4,傳送損失也幾乎不會增 加。因此,可把包層直徑設小成爲6 0 # m。藉由使用G a N系 的LD而可容易獲得光密度高之光束。 但是,光纖31的包層直徑不限定爲60/zm。以往在光纖光 源所使用之光纖的包層直徑爲1 2 5 // m,但是包層直徑越小則 焦點深度係變越深,所以多模光纖的包層直徑係80 // m以下 較好,60 // m以下更好,40 // m以下更佳。一方面,核心直徑有 必要至少爲3〜4 # m,所以光纖3 1的包層直徑係1 0 // m以上 較佳。 雷射模組64係由第1 1圖所示之合波雷射光源(光纖光源) 所構成。此合波雷射光源係由如下所構成:即,配列固定在 熱塊1 0上之複數(例如7個)個晶片狀之橫多模或單模之 GaN 系半導體雷射 LD1、LD2、LD3、LD4、LD5、LD6、及 LD7 ; 對應GaN系半導體雷射LD1〜LD7各自而設置之准直透鏡 1 1、12、13、14、15、16、及 17 ; 1 個集光透鏡 20 ; 1 條多 模光纖30。此外,半導體雷射之個數不受限爲7個。例如, 包層直徑=60 /z m、核心直徑=50 // m、NA = 0 . 2的多模光纖 係可入射20多個半導體雷射光,實現曝光頭5之必要光量, 且可將光纖條數減爲更少。1263798 IX. Description of the Invention: [Technical Field] The present invention relates to a light-forming device, and more particularly to forming a light-curable resin by exposing a light beam modulated by an @光光: modulation element in response to image data. Dimensional light forming device. [Prior Art] In recent years, along with the popularization of 3D CAD (Computer Aided Design) system, a light forming system is used, which is based on a 3D shape of an imaginary space created by a 3D CAD on a computer, and then a beam according to CAD data. The photocurable resin is exposed to form a three-dimensional model. In this photoforming system, the CAD data is cut at a specified interval on the computer and then made into a plurality of cross-sectional data, and the surface of the liquid photocurable resin is scanned by laser light according to the cross-section data to harden the layer, and then The resin hardened layer was sequentially laminated to form a three-dimensional model. In the photo-forming method, the liquid-curable resin is stored in the upper open type in advance, and then placed on the molding table close to the liquid surface of the photocurable resin, and sequentially suspended from the free liquid surface of the resin. The free liquid surface method of hardening the resin layer is widely known. In the past, the optical molding apparatus used in the optical molding system has the following, as shown in "Kyuko Yaji: Foundation, Current Status, Problems, Model Technology, Vol. 7, No. 10, PP18-23, 1 992". The laser scanner is used to perform scanning and to perform scanning according to the movable mirror mode. A laser patterning device in the form of a laser plotter is shown in Fig. 28. In this device, the laser light oscillated by the laser source 250 passes through the optical fiber 256 having the shutter 252 to reach the XY plotter 2 5 6, and then the XY plotter 256 illuminates the 1263798 into the container 260. The liquid level 2 66 of the photocurable resin 262. Further, the position of the X Y plotter 256 in the X direction and the Y direction is controlled by the XY positioning mechanism 2 5 8 having the X positioning mechanism 2 58 a and the Y positioning mechanism 2 5 8 b. Therefore, by moving the XY plotter 256 while moving in the X direction and the Y direction, the laser light irradiated by the XY plotter 256 is turned on and off by the shutter 252 in response to the cross section data, and is hardened. The photocurable resin 262 ° of the specified portion of the liquid surface 2 6 6 However, in the laser forming apparatus according to the laser plotter mode, there is a limit in the shutter speed or the moving speed of the plotter, and it is required to be long in molding. The problem of time. Next, a light-mold forming apparatus of a conventional movable mirror type using a galvanometer mirror will be described with reference to Fig. 29. In this apparatus, the laser beam 270 is reflected by the X-axis rotating mirror 272 and the Y-axis rotating mirror 274, and is irradiated onto the photocurable resin 262. The X-axis rotating mirror 272 rotates with the Z axis as a rotation axis to control the position of the irradiation position in the X direction, and the Y-axis rotation mirror 274 rotates with the X axis as the rotation axis to control the position of the irradiation position in the Y direction. In this movable mirror mode, the scanning speed can be improved compared to the laser plotter mode. However, in the light-shaping apparatus according to the movable mirror type, since the scanning is performed with a minute laser spot, even if a high-speed scanning of, for example, 2 to 12 m/s is performed, a 3 dimensional model of 10 cm cubic size needs to be formed in the molding. ~24 hours of time, it takes a long time to form on the molding. Further, since the laser light 270 is reflected only when the Y-axis rotating mirror 274 is incident at an angle of a predetermined range, the irradiation region is limited to, in order to enlarge the irradiation region, the Y-axis rotating mirror 274 is disposed at the light-curing property. When the position of the resin 262 is high, the diameter of the laser spot becomes 1263798, which greatly deteriorates the positioning accuracy and reduces the molding accuracy. Further, when the rotation angle of the γ-axis rotating mirror 274 is increased, the irradiation range is enlarged, but the positioning accuracy is deteriorated in the same manner, and the orthodontic error increases. Further, in the optical molding apparatus using the galvano mirror, the adjustment of the optical system such as strain correction or optical axis adjustment is complicated, the optical system is complicated, and the entire apparatus is enlarged. In addition, in any type of light-forming device, a high-output ultraviolet laser light source is used as a laser light source, and conventionally, a gas laser such as an argon laser or a HG (third harmonic) is used. In the case of a solid laser, the gas laser is inconvenient for the maintenance of the exchange of the pipe, and the price of the optical molding device is increased, and the equipment such as a cooler for cooling is required to be large. In the THG solid-state laser, the pulse train of the Q switch is slow in repetition and is not suitable for high-speed exposure. Further, since the wavelength conversion efficiency is deteriorated by using THG light, it is not possible to increase the output, and it is necessary to use a high output as an excitation semiconductor laser, which is a very high cost. In view of the above, a photoforming apparatus is disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. The light source in the exposed area is multi-exposure of the pixels according to a plurality of light sources. In this device, pixels are multiple-exposed by a plurality of light sources, so even if the output of each light source is small, an inexpensive light-emitting diode (LED) can be used as a light source. However, in the optical molding apparatus described in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. And according to a plurality of light sources, the pixels are used for multiple exposures, -8 - 1263798, so there is a lot of waste in the action, and it also has a problem that it takes a long time to form. Further, since the number of light sources is increased, there is also a problem that the exposure portion is enlarged. Furthermore, even if multiple exposures are made with the amount of light output from the LED, there is a possibility that sufficient resolution cannot be obtained. SUMMARY OF THE INVENTION The present invention has been made in view of the above problems of the prior art, and it is an object of the present invention to provide a high speed molding light forming apparatus. Further, another object of the present invention is to provide a light forming apparatus which can be formed with high precision. [Means for Solving the Problem] In order to achieve the above object, a photo-forming apparatus according to the present invention includes: a molding groove for accommodating a photocurable resin; and a support table for supporting lifting in the molding groove a molding provided by the ground; an exposure head comprising: a laser device, irradiating the laser light; and a spatial light modulation element, wherein the plurality of pixels corresponding to the respective control signals are changeable in the light modulation state are arranged on the substrate in a two-dimensional manner a portion for modulating the laser light irradiated by the laser device; and the control means controlling a total number of pixels of the pixel portion arranged on the substrate by using a control signal generated by the corresponding exposure information a plurality of pixel units; an optical system that images the laser light modulated in each pixel portion on a liquid surface of the photocurable resin contained in the molding groove; and a moving means to make the exposure head photohardenable The liquid level of the resin is relatively moved. In the optical molding apparatus of the present invention, the laser light modulated by the respective pixel portions of the spatial light modulation element of the exposure head is imaged on the liquid surface of the photocurable resin contained in the molding residue, and is utilized at the same time. The moving means relatively moves the liquid level of the photocurable resin by the exposure head to scan and expose the liquid surface of the light-hardened -9-1263798 resin contained in the molding groove. The exposed resin is cured to form a hardened resin layer. After the hardened resin layer is formed into one layer, it is used to support the formation of the molded article. The support table in the molding groove is lowered to form a new resin surface, and the secondary-hardened resin layer is formed in the same manner. As a result, the hardening and lowering of the support resin causes the hardened resin layers to be sequentially laminated to form a three-dimensional model. In the optical molding apparatus of the present invention, the spatial light modulation component of the exposure head controls the signal generated by the exposure information to control the number of pixels corresponding to the pixel portion arranged on the substrate. A plurality of pixel parts each. That is, it is not controlled to control all of the pixel parts arranged on the substrate, but to control a part of the picture portion. Therefore, the number of pixels to be controlled is reduced, and the transfer speed of the control signal is shorter than when the control signals of all the pixel units are transferred. According to this, the speed can be adjusted quickly and the mold can be formed at a high speed. In the above-described optical molding apparatus, the pixel unit controlled by the control means has a length corresponding to a direction in a predetermined direction that is longer than a length of a direction longer than a direction intersecting the designated direction. good. By using a pixel portion in a long region in the direction in which the light-emitting points of the laser device are arranged, the number of exposure heads to be used can be reduced. Further, in the above-described optical forming apparatus, the laser device may be configured to include a plurality of optical fiber light sources that emit laser light incident from an incident end of the optical fiber from an exit end thereof, and in an exit end of the plurality of optical fiber light sources The light-emitting points are each arranged in a 1-dimensional or 2-dimensional array as an optical fiber array light source. Further, a fiber bundle light source in which the light-emitting points of the plurality of optical fiber light sources are arranged in a bundle shape may be used. The output can be plotted and increased by arraying or beaming. In the case of the optical fiber, it is preferred to use an optical fiber having a uniform core diameter and a cladding diameter which is smaller than the cladding diameter of the -10- 1263798 incident end. It is preferable that each of the optical fiber light sources constituting the optical fiber array light source and the like is a combined laser light source that combines the laser light and enters the optical fiber. High-brightness and high output can be achieved by combining laser light sources. Moreover, since the number of optical fibers which are arrayed to obtain the same light output can be solved without much, the cost is low. Further, since the number of optical fibers is small, the light-emitting area at the time of array formation is small (high luminance). Since the above-mentioned optical fiber having a small cladding diameter is used, the light-emitting area at the time of array formation is small and can be increased in brightness. Even when a spatial light modulation element is partially used, by using a high-intensity fiber array light source or a fiber bundle light source, it is possible to efficiently irradiate the laser light to the use portion, particularly to the illumination NA of the spatial modulation element. Smaller, the depth of focus of the imaging beam after passing through the spatial modulation component can be deepened, and the laser light can be irradiated with high optical density. Accordingly, high-speed and high-definition exposure and molding systems are possible. For example, the formation of a fine shape of 1 // m grade is also possible. For example, the optical fiber source may be configured as follows: a complex semiconductor laser; a complex semiconductor laser; a fiber; and a collecting optical system that collects the laser beams emitted by the respective plurality of semiconductor lasers and sets the light beam The beam is coupled to the incident end of the fiber. Further, the optical fiber light source may also be configured as: a multi-cavity laser having a plurality of light-emitting points; an optical fiber; and a collecting optical system that collects the laser beams emitted from the respective complex light-emitting points and sets the light beams The beam is coupled to the incident end of the fiber. Furthermore, it is also possible to combine the laser beams emitted from the respective light-emitting points of the plurality of cavity lasers and combine them to one optical fiber. In the spatial modulation element used in the above-described optical molding apparatus, it is possible to use a two-dimensional arrangement of a plurality of micromirrors which can change the reflection surface angle by a range of 1 1 to 1263798 degrees in accordance with each control signal. A micromirror device (dmd) or a liquid crystal shutter array formed by arranging a plurality of liquid crystal cells that transmit light in response to respective control signals is arranged in two dimensions on a substrate. Like DMD, it uses a spatial light modulation component with a plurality of halogen elements to expose it in most channels to prevent power dispersion and thermal strain. In the laser device using the above-described photoforming apparatus, a laser light having an irradiation wavelength of 3 50 to 4 50 nm is preferable. For example, by using a GaN-based semiconductor laser in a semiconductor laser, a laser device that irradiates laser light having a wavelength of 305 to 450 nm can be formed. By using laser light having a wavelength of 3 50 to 450 nm, the light absorptivity of the photocurable resin can be greatly increased as compared with the case of using laser light having an infrared wavelength region. The laser light with a wavelength of 3 50 to 4 50 nm has a short wavelength, so the photon energy is large and it is easy to convert it into a thermal energy system. As a result, the laser light having a wavelength of from 3 5 0 to 45 nm has a large light absorptivity and is easily converted into a thermal energy system. Therefore, the photocurable resin can be molded at a high speed. The wavelength of the laser light is preferably 350 to 420 nm. In terms of utilizing a low-cost GaN-based semiconductor laser, the wavelength of 40 5 nm is particularly good. Further, the above-described optical molding apparatus can be configured as a multi-head type optical molding apparatus including a plurality of exposure heads. The speed of molding can be increased by multi-heading. [Embodiment] [Configuration of Light Forming Apparatus] The light forming apparatus according to the embodiment of the present invention has a container 156 that is open at the top as shown in Fig. 1, and contains liquid photocuring property in the container 156. Resin 150. Further, a flat lifting stage 15 2 is disposed in the container 156, and the lifting stage 15 2 is supported by a support - 12 - 1263798 part 154 disposed outside the container 156. The support portion 1 5 4 is provided with a male screw portion 1 5 4 A, and the male screw portion 1 5 4 A is screwed to a lead screw 15 5 that is rotatable by a drive motor (not shown). Along with the rotation of the lead screw 150, the lifting stage 15 2 is lifted. Above the liquid surface of the photocurable resin 152 housed in the container 156, the box-shaped scanner 162 is disposed such that its longitudinal direction faces the width direction of the container 156. The scanner 1 62 is supported by two support arms 160 that are mounted on both sides in the width direction. Further, the scanner 1 62 is connected to a controller (not shown) for controlling it. Further, on both side faces in the longitudinal direction of the container 1 56, guide portions 158 extending in the sub-scanning direction are provided. The lower end portions of the two support arms 160 are attached to the guide portions 158 to follow the pair. The scanning direction is reciprocally mounted. Further, the optical molding apparatus is provided with a driving means (not shown) for driving the support arm 160 together with the scanner 162 along the guiding portion 158. As shown in Fig. 2, the scanner 1 62 (for example, three rows and five columns) is provided with a plurality of (for example, 14) exposure heads 166 arranged in a matrix. In this example, four exposure heads 166 are arranged in the third row because of the relationship with the width direction of the container 156. Further, when the respective exposure heads arranged in the nth column of the mth row are indicated, they are indicated as the exposure heads 166mn. The exposure region 168 according to the exposure head 166 has a rectangular shape in which the sub-scanning direction is the short side. Therefore, with the movement of the scanner 162, an exposed region (hardened region) 1 70 of a strip shape of each exposure head 166 is formed on the liquid surface of the photocurable resin 15 2 . Further, when an exposure region formed by each of the exposure heads arranged in the nth column of the mth row is to be indicated, it is expressed as an exposure region 168 mn. 1263798 Further, as shown in FIGS. 3(A) and 3(B), the strip-shaped exposed regions 170 are arranged in a direction orthogonal to the sub-scanning direction without a gap, and the exposure heads of the respective rows in the line arrangement are respectively It is arranged in the arrangement direction at a predetermined interval (a natural multiple of the long side of the exposure area, twice in the present embodiment). Therefore, the unexposed portion between the exposed area 168n and the exposed area 168 12 of the first row can be exposed by the exposure area 1 6 8 21 of the 2nd line and the exposure area 1 6 8 31 of the 3rd line. The exposure heads 166^-16 6^ are each shown in Figures 4, 5(Α) and 5(B), and have a digital micromirror device (DMD) 50 as the corresponding image data to reflect the incident light beam to the image data. Each pixel is used as a spatial light modulation component for modulation. The DMD 50 is connected to a controller having a data processing unit and a mirror drive control unit (not shown). The data processing unit of the controller generates control signals for controlling the respective micromirrors in the control region of the DMD 50 of each exposure head 166 based on the input image data. In addition, the area to be controlled is described later. The light incident side of the DMD 50 is arranged in the following order: an optical fiber having an exit end portion (light-emitting point) of the optical fiber arranged in a row in a direction corresponding to the longitudinal direction of the exposure region 168 Array light source 66; a lens system 67 that corrects the laser light emitted by the fiber array light source 66 and condenses the light on the DMD; and a mirror that reflects the laser light from the transmission lens system 67 toward the DMD 50. a pair of combined lenses 71 that are made to collimate the laser light emitted from the fiber array light source 66 in parallel, and a pair of combined lenses 7 3 that correct the light amount distribution of the laser light that is parallelized to be uniform. A light collecting lens 75 in which the corrected amount of laser light is collected on the DMD by a light amount of 14 to 1263798. The combined lens 713 is provided with a direction in which the laser emitting end is arranged, and a portion close to the optical axis of the lens is a portion that expands the light beam and is separated from the optical axis, and the light beam is reduced in a direction orthogonal to the arrangement direction. The function of passing through as it is, the light quantity distribution is generally corrected for the laser light. Further, on the light reflection side of the DMD 50, lens systems 54, 58 for imaging the laser light reflected by the DMD 50 on the scanning surface (exposure surface) 56 of the photosensitive material 150 are disposed. The lens systems 54 and 58 are arranged such that the DMD 50 and the exposed surface 56 are in a conjugate relationship. As shown in Fig. 6, the DMD 50 is a small mirror (microscope) 62 supported by a pillar on a SRAM cell (memory cell) 60, and is configured to be a plurality of pixels (PIXEL) (for example, 600 X 800) micro mirrors are arranged in a lattice arrangement. The uppermost part of each pixel is provided with a micromirror 62 supported by a pillar, and the surface of the micromirror 62 is vapor-deposited with a material having a high reflectance such as aluminum. Further, the reflectance of the micromirror 62 is 90% or more. In addition, the CMOS SRAM cell 60 of the gate of the normal semiconductor memory production line is disposed in the front of the micromirror 62 through the pillar including the hinge and the yoke, and the whole system is configured as a monolith (integrated type). . When the SRAM cell 60 of the DMD 50 is written with a digital signal, the micromirror 62 supported by the post is centered on the diagonal and is at a degree (for example, ± 1 相对) with respect to the substrate side on which the DMD 50 is disposed. The range of the slope is inclined. The 7th (A) diagram shows that the tilt of the micromirror 6 2 in the on state is at +α degrees, and the seventh (B) diagram is in the state in which the tilt of the micromirror 62 in the off state is -α degrees. Therefore, in response to the image signal, by making the tilt control 1263798 of the micromirrors 6 2 of the respective elements of D M D 5 0 as shown in Fig. 6, the light beams incident on the DMD 50 are reflected toward the oblique directions of the respective micromirrors 62. Further, Fig. 6 is an enlarged view of a portion of the DMD 50, and shows that the micromirror 62 is controlled by one state of + degree or one degree of α. The opening and closing control of the respective micromirrors 6 2 is performed by a controller (not shown) connected to the DMD 50. Further, a light absorber (not shown) is disposed in the direction in which the micromirrors 6 and the light beams are reflected in the closed state. Further, it is preferable that the DMD 50 is disposed such that its short side is slightly inclined at a predetermined angle of 0 (e.g., 1 ° to 5 °) in the sub-scanning direction. The eighth (a) diagram shows the scanning trajectory of the reflected light image (exposure beam) 53 of each micromirror when the DMD 50 is not tilted, and the eighth (B) image of the exposure beam 5 3 when the DMD 50 is tilted. Scan the track. In the DMD 50, a micromirror array in which a plurality of micromirrors (for example, 800) are arranged in the longitudinal direction is arranged in a plurality of arrays in the width direction (for example, a group of 6 〇〇), as shown in FIG. 8(B). By tilting the DMD 50, the pitch pi of the scanning trajectory (scanning line) of the exposure beam 53 of each micromirror becomes narrower than the pitch P2 of the scanning line when the DMD 50 is not tilted, and the resolution can be greatly improved. On the other hand, since the inclination angle of the DMD 50 is small, the scanning width W2 when the DMD 50 is tilted is slightly the same as the scanning width W1 when the DMD 50 is not tilted. Further, depending on the different micromirror columns and the same scanning line, the overlap is exposed (multiple exposure). Thus, by being subjected to multiple exposures, a small amount of exposure position can be controlled to achieve high-definition exposure. Further, by the digital image processing such as a small amount of exposure position control, the connection between the plurality of exposure heads arranged in the main scanning direction can be connected without any difference. - 1 6 - 1263798 In addition, instead of the tilt of the DMD 50, the same effect can be obtained by arranging the micromirrors in a direction orthogonal to the sub-scanning direction and at a predetermined interval offset in a checkerboard configuration. The fiber array light source 66 is provided with a plurality (e.g., six) of laser modules 64 as shown in Fig. 9(A), and each of the laser modules 64 is coupled to one end of the multimode fiber 30. The end of the multimode fiber 30 is combined with an optical fiber 31 having a core diameter smaller than that of the multimode fiber 30 and having a larger cladding diameter and a larger mode fiber 30. As shown in Fig. 9(C), the exit end of the optical fiber 3 1 The portion (light-emitting point) is arranged in one line along the main scanning direction orthogonal to the sub-scanning direction to constitute the laser emitting portion 68. Further, as shown in Fig. 9 (D), the light-emitting points may be arranged in two rows along the main scanning direction. The exit end of the optical fiber 3 1 is fixed as shown in Fig. 9(B), and the surface is held by the flat two support plates 65. Further, the light-emitting side of the optical fiber 31 is provided with a transparent protective plate 63 such as glass to protect the end faces of the optical fibers 31. The protective plate 63 may be disposed in close contact with the end surface of the optical fiber 31, or the end surface of the optical fiber 31 may be arranged in a sealed manner. Although the exit end of the optical fiber 31 is degraded by optical density and easy to collect dust, by arranging the protective plate 63, it is possible to prevent dust from adhering to the end surface and to delay deterioration. In this example, in order to arrange the exit end of the optical fiber 3 1 having a small cladding diameter as 1 歹 ij without gaps, the multimode optical fiber is interposed between two adjacent multimode optical fibers 30 having a large cladding diameter. 30 is gathered, and the exit end of the optical fiber 3 1 combined with the aggregated multimode optical fiber 30 is arranged to be bundled with the optical fiber 3 1 combined with the two multimode optical fibers 30 adjacent to each other with a large cladding diameter. Between 2 exits. Such an optical fiber, for example, as shown in Fig. 10, has a cladding diameter of 1 to 3 Qcm in length by the front end portion of the laser light exiting side of the multi-mode optical fiber 30 of - 17 - 1263798 having a large cladding diameter. The small optical fibers 31 are obtained by coaxially combining them. The incident end faces of the two fiber-optic fibers 31 are bonded to each other at the exit end faces of the multimode fibers 30 in such a manner that the central axes of the two fibers are uniformly welded. As described above, the diameter of the core 31a of the optical fiber 3 1 is the same as the diameter of the core 30 a of the multimode fiber 30. Further, a short-length optical fiber in which an optical fiber having a small cladding diameter is welded to a fiber having a small cladding diameter can be bonded to the exit end of the multimode optical fiber 30 via a set of 圏 or optical connectors. By detachably joining by a connector or the like, it is easy to exchange the tip end portion when the optical fiber having a small cladding diameter is broken, and the cost of maintenance of the exposure head can be reduced. Further, the fiber 31 is sometimes referred to as an exit end of the multimode fiber 30 hereinafter. The multimode optical fiber 30 and the optical fiber 31 may be any of a STEP INDEX type optical fiber, a GRATED INDEX type optical fiber, and a composite type optical fiber. For example, a STEP INDEX type optical fiber manufactured by Mitsubishi Electric Industries, Ltd. can be used. In the present embodiment, the multimode fiber 30 and the optical fiber 31 are STEP INDEX type fibers, and the multimode fiber 30 has a cladding diameter of 125/zm, a core diameter of 25/zm, ΝΑ = 0.2, and a transmittance of the incident end face coating. = 99·5% or more, the optical fiber 31 is a cladding diameter of two 60//m, a core diameter = 25//m, and ΝΑ = 0.2. Generally, in the case of laser light in the infrared region, if the cladding diameter of the optical fiber is set small, the transmission loss increases. Therefore, the appropriate cladding diameter is determined in response to the wavelength band of the laser light. However, the shorter the wavelength, the less the transmission loss is. In the case of laser light having a wavelength of 40 5 nm emitted by a GaN-based semiconductor laser, even if the thickness of the cladding {{cladding diameter-core diameter)/2} is 800 nm. The wave 1263798 is about 1 / 2 of the infrared light in the long band, or about 1 / 4 of the infrared light in the wavelength band of 1.5 / m, and the transmission loss hardly increases. Therefore, the cladding diameter can be made small to 60 # m. A light beam having a high optical density can be easily obtained by using an LD of the G a N system. However, the cladding diameter of the optical fiber 31 is not limited to 60/zm. In the past, the cladding diameter of the fiber used in the fiber source is 1 2 5 // m, but the smaller the cladding diameter is, the deeper the depth of focus is, so the cladding diameter of the multimode fiber is preferably 80 // m or less. , 60 / m or less is better, 40 / m or less is better. On the one hand, the core diameter needs to be at least 3 to 4 #m, so the cladding diameter of the optical fiber 3 1 is preferably more than 10 // m. The laser module 64 is composed of a multiplexed laser light source (optical fiber source) as shown in Fig. 11. The multiplexed laser light source is composed of a plurality of (for example, seven) wafer-shaped transverse multimode or single mode GaN-based semiconductor lasers LD1, LD2, LD3 fixed on the thermal block 10. LD4, LD5, LD6, and LD7; collimating lenses 1 1 , 12 , 13 , 14 , 15 , 16 , and 17 corresponding to respective GaN-based semiconductor lasers LD1 to LD 7 ; 1 collecting lens 20 ; Strip multimode fiber 30. In addition, the number of semiconductor lasers is not limited to seven. For example, a multimode fiber with a cladding diameter = 60 /zm, a core diameter = 50 // m, and a NA = 0.2 can inject more than 20 semiconductor lasers to achieve the necessary amount of light for the exposure head 5, and the fiber strip can be The number is reduced to less.

GaN系半導體雷射LD1〜LD7係振盪波長全部共通(例 如、;40 5nm ),最大輸出也全部共通(例如,多模雷射爲i〇〇mw、 單模雷射爲30mW )。此外,以GaN系半導體雷射LD1〜LD7而 言,在350nm〜450nm的波長範圍,也可使用具備有上述之 1263798 4 Ο 5 n m以外的振擾波長之雷射。 上述之合波雷射光源係如第1 2及1 3圖所示,連同其他光 學要素一起被收納在上方有開口之箱狀的封裝40內。封裝 40係具備有關閉其開口般所作成之封裝蓋4 1,在脫氣處理後 導入封止氣體,藉由把封裝40之開口以封裝蓋4 1閉合,而 在由封裝4 0和封裝蓋4 1所形成之閉空間(封止空間)內, 氣密封止上述合波雷射光源。 在封裝40的底面係固定有基板42,此基板42的上面係安 裝有:該熱塊1 0 ;保持集光透鏡2 0的集光透鏡保持器;以 及用以保持多模光纖30的入射端部之光纖保持器46。多模 光纖3 0的出射端部係由形成於封裝40之壁面的開口被引出 至封裝外。 又,在熱塊1 0的側面係安裝有准直透鏡保持器44,准直透 鏡1 1〜1 7係被保持著。在封裝40之橫壁面形成有開口,通 過此開口,用以對GaN系半導體雷射LD1〜LD7供給驅動電流 的配線47係被引出至封裝外。 此外,在第13圖中,爲避免圖面之煩雜化,僅由複數個GaN 系半導體雷射之中、對GaN系半導體雷射LD7附加編號,複 數個准直透鏡之中僅對賦予准直透鏡1 7附加編號。 第1 4圖係表示上述准直透鏡1 1〜1 7之安裝部分的正面形 狀。准直透鏡1 1〜1 7係各自形成爲以平行的平面,細長地切 取包含有具備非球面的圓形透鏡之光軸的區域。此細長形狀 的准直透鏡,例如係可藉由將樹脂或光學玻璃予以模製成形 而形成。准直透鏡11〜17係,長度方向爲與GaN系半導體雷 -20 - 1263798 射LD1〜LD7之發光點的配列方向(第14圖之左右方向)成 正交般地被密接配置在上述發光點之配列方向。 一方面,以GaN系半導體雷射LD1〜LD7而言,係使用具備 發光寬度爲2 # m的活性層,與活性層平行的方向、直角的方 向之視角各自爲例如10° 、30°的狀態之發射各個雷射光束 B1〜B7之雷射。此等GaN系半導體雷射LD1〜LD7係在與 活性層平行的方向上發光點成1列排列地配設著。 因此,由各發光點所發出之雷射光束B1〜B7係如上述般、 對細長形狀之各准直透鏡1 1〜1 7,係成爲以視角角度爲大的 方向與長度方向一致,視角角度爲小的方向係與寬度方向 (與長度方向正交之方向)一致的狀態入射。亦即,各准直 透鏡1 1〜17之寬度爲1 . 1mm、長度爲4.6mm,入射至此等之 雷射光束B1〜B7的水平方向、垂直方向的光束直徑係各自 爲0 · 9mm、2 · 6mm。又,准直透鏡1 1〜17係各自爲焦點距離 二 3mm、NA=0.6、透鏡配置間距=1.25mm。 集光透鏡20,係以平行的平面,細長地切取包含有具備 非球面之圓形透鏡的光軸之區域,准直透鏡1 1〜1 7的配列方 向,亦即形成爲在水平方向爲長、且在與其垂直的方向爲 短的形狀。此集光透鏡2 0係焦點距離f 2 = 2 3 mm、N A = 0。2。 此集光透鏡20也係藉由例如將樹脂或光學玻璃予以模製成 形而形成。 〔光成型裝置之動作〕 以下茲針對該光成型裝置之動作作說明。 在掃描器162之各曝光頭166,由構成光纖陣列光源66之 1263798 合波雷射光源的GaN系半導體雷射LD1〜LD7各自以發散光 狀態所出射之雷射光束Bl、B2、B3、B4、B5、B6、及B7各 自係由對應的准直透鏡1 1〜1 7而被平行光化。被平行光化 之雷射光束B1〜B7係由集光透鏡20所集光而收束至多模光 纖3 0之核心3 0 a的入射端面。 本例中,由准直透鏡11〜17及集光透鏡20構成了集光光 學系統,由其集光光學系統和多模光纖3 〇而構成合波光學系 統。亦即,利用集光透鏡20、如同上述之被集光之雷射光束 B1〜B7係入射至此多模光纖30之核心30a以在光纖內傳送, 而被合波成1條雷射光束B再由結合至多模光纖30之出射 端部的光纖3 1出射。 於各雷射模組中,雷射光束B1〜B7對多模光纖30之結合 效率係〇 · 85、且GaN系半導體雷射LD1〜LD7之各輸出爲30mW 時,被陣列狀配列的各光纖3 1係可獲得輸出約1 8 0 m W( = 3 0 M w X 0 . 8 5 X 7 )之合波雷射光束B。因此,以陣列配列有6條光 纖31的雷射出射部68之輸出約爲1W ( = 180mW X 6 )。 光纖陣列光源66之雷射出射部68上係沿著主掃描方向呈 一列地配列有此種高亮度之發光點。由於把來自單一半導體 雷射之雷射光結合至1條光纖之以往的光纖光源係低輸出, 所以若未配列多數列則不能獲得所期望的輸出,但在本實施 形態所使用之合波雷射光源係高輸出,所以少數列,例如即使 1列也可獲得所期望的輸出。 例如,在將半導體雷射和光纖以1對1結合之以往的光纖 光源中,通常,以半導體雷射而言,係使用輸出爲30mW (毫 -22- 1263798 瓦)程度之雷射,以光纖而言,因爲係使用核心直徑5 Ο μ m、 包層直徑1 2 5 " m、ΝΑ (開口數)〇 . 2之多模光纖,所以若欲 獲得約1W (瓦)的輸出,則多模光纖必需把4 8條(8 X 6 ) 成一束,發光區域之面積爲0.62 mm2 ( 0.675 mm x〇.925mm), 所以在雷射出射部68之売度爲i.6xi06(W/m2),每1條光 纖之亮度爲3.2X106 ( W/m2 )。 相對地,在本實施形態中,如同上述,以多模光纖6條約可 獲得1 IV的輸出,在雷射出射部68之發光區域的面積爲 0.008 1mm2 ( 0.3 2 5mmX 0.025_),所以雷射出射部 68 之亮 度成爲123xi06(W/m2),相較於以往約可圖謀80倍的高亮 度化。又,每1條光纖之亮度爲90X1 O6 ( W/m2),相較於以 往約可圖謀28倍的高亮度化。 在此,參照第1 5 ( A )及1 5 ( B )圖,針對以往的曝光頭和 本實施形態的曝光頭之焦點深度的差異加以說明。以往的曝 光頭之束狀光纖光源的發光區域之副掃描方向的直徑爲 0 . 6 7 5mm,本實施形態之曝光頭的光纖陣列光源之發光區域的 副掃描方向的直徑爲0 . 02 5mm。如第1 5 (- A )-圖所示,在以往 的曝光頭中,光源(束狀光纖光源)1之發光區域大,所以對 DMD3入射的光束之角度變大,其結果,對掃描面5入射的光 束之角度變大。爲此,相對於集光方向(焦點方向之偏差), 光束直徑係易過寬。 一方面,如第1 5 ( B )圖所示,在本實施形態的曝光頭中, 光纖陣列光源66之發光區域的副掃描方向之直徑小,所以通 過透鏡系67對DMD50入射的光束之角度變小,其結果’對掃 -23- 1263798 描面5 6入射的光束之角度變小。亦即,焦點深度變深。在本 例中,發光區域之副掃描方向的徑係約爲以往的3 0倍,可獲 得與略繞折界限相當的焦點深度。因此適於微小光點之曝 光。對此焦點深度之效果係在曝光頭的必要光量越大越顯著 且有效。在此例中,被投影在曝光面之1畫素尺寸係1 〇 M m χ 1 Ο # m。此外,DMD係反射型的空間調變元件,如第1 5 ( A ) 及1 5 ( B )圖係用以說明光學方面之關係的展開圖。 對應一層份的曝光圖案之畫像資料係被輸入連接在DMD50 之未圖示的控制器,且暫時記憶在控制器內之圖框記億體。 此畫像資料係以2進制(點記錄之有無)來表示構成畫像之 各畫素的濃度之資料。 掃描器1 6 2係依未圖示的驅動裝置,沿著導引部1 5 8由副 掃描方向之上游側往下游側以一定速度被移動。當掃描器 1 62開始移動時,被記憶在圖框記憶體之畫像資料係各複數 線被依序讀出,再依據於資料處理部讀出的畫像資料而生成 對各曝光頭1 66之控制信號。然後,利用鏡驅動控制部,依據 生成的控制信號、各曝光頭166之DMD50的微鏡各自係被控 制開啓、關閉。 當雷射光由光纖陣列光源66被照射至DMD50時,則在 DMD50之微鏡爲開啓狀態時被反射之雷射光係,經由透鏡系 54、58而被成像在光硬化性樹脂150之液面(被曝光面)56 上。如此一來,由光纖陣列光源6 6所出射的雷射光係在各畫 素被開啓、關閉,光硬化性樹脂150係以與DMD50之使用畫 素數略同數量之畫素單位(曝光區域168)被曝光而硬化。 - 2 4 - 1263798 又,藉由掃描器1 62被以一定速度移動,光硬化性樹脂1 5 〇 之液面被執行副掃描,以形成各曝光頭1 66帶狀的燒結區域 170° 如第16( Α)及16( Β)圖所示,本實施形態中,於DMD5 0, 在主掃描方向配列有800個微鏡的微鏡列雖然在副掃描方向 配列有600組,但在本實施形態中,係依控制器來控制僅一部 分的微鏡列(例如,800個X 1 00列)被驅動。 如第16(A)圖所示,也可以使用配置在DMD50之中央部 的微鏡列,如第16 ( Β)圖所示,也可以使用配置在DMD50之 端部的微鏡列。又,在一部分的微鏡產生缺陷的場合時,要使 用未發生缺陷的微鏡列等,因應狀況也可適宜變更要使用的 微鏡列。 DMD50的資料處理速度上係有其限度,與要使用之畫素數 成比例而每1線的調變速度係被決定,所以藉由僅使用一部 分的微鏡列,每1線的調變速度變快。一方面,在連續地使 曝光頭對相對移動之曝光方式時,並沒有將副掃描方向的畫 素予以全部使用之必要。 例如,600組的微鏡列之中,在僅使用3 00組之場合,與600 組全部使用之場合相比較下,係可將每1線調變快2倍。 又,600組的微鏡列之中,在僅使用200組之場合,與600組 全部使用之場合相比較下,係可將每1線調變快3倍。亦即, 可在副掃描方向將5 0 Omm的區域以1 7秒曝光。再者,在僅使 用1 0 0組之場合時,係可將每1線調變快6倍。亦即,可在副 掃描方向將5 00mm的區域以9秒曝光。 -25 - 1263798 欲使用之微鏡列的數目,亦即,配置在副掃描方向之微鏡的 個數係1 0以上且2 0 0以下較好,1 〇以上且1 〇 〇以下更好。 由於相當於1畫素之每1個微鏡的面積爲丨5 V m X丨5 V m,所 以右換算爲DMD50的使用區域,則以上且12mm X 3mm以下的區域較好,1 2mm X 1 50 // m以上且1 2mm X 1 . 5mm以 下的區域更好。 欲使用之微鏡列的數目若在上述範圍,則如第1 7 ( A )及1 7 (B )圖所不,使由光纖陣列光源6 6所出射的雷射光在透鏡 系67施以略平行光化而可對DMD50照射。由DMD50照射雷 射光的照射區域與DMD50之使用區域係一致者爲較佳。照射 區域若較使用區域還寬則雷射光之利用效率降低。 一方面,因應透鏡系67之在副掃描方向配列之微鏡的個數, 雖然有必要將集光於DMD50上之光束的副掃描方向之直徑設 定小,但是當使用之微鏡列的數目未滿10時,則入射於DMD50 之光束的角度係變大,在掃描面56中之光束的焦點深度變 淺,所以並不佳。又,以調變速度的觀點來說,使用之微鏡 列數爲200以下係較佳。此外,DMD係反射型之空間調變元 件,第1 7 ( A )及1 7 ( B )圖係用以說明光學關係的展開圖。 當利用掃描器1 6 2的1次副掃描結束1層分的硬化時,掃 描器162係依未圖示的驅動裝置,沿著導引部158回復至位 在最上游側之原點。接著,依未圖示的驅動馬達使導螺桿1 5 5 旋轉而將昇降載物台152降下指定量,使光硬化性樹脂150 的硬化部分沈到液面下,以液狀光硬化性樹脂1 50充滿硬化 部分的上方。然後,次層的畫像資料係在被輸入到連接至 -26 - 1263798 MD50之未圖示的控制器後,再度執行依掃描器162之副掃 描。如此,反覆地執行依副掃描的曝光(硬化)和載物台之 下降,經由層疊硬化部分以形成3維模型。 如以上之說明,本實施形態的光成型裝置係具備有DMD,其 在主掃描方向配列800個微鏡之微鏡列係在副掃描方向配列 有600組,但是因爲利用控制器使僅一部分之微鏡列受驅動 般地加以控制,所以與驅動全部的微鏡列之場合相較之下,每 1線的調變速度係變快速。依此係可高速的曝光及成型。 又,用以照明DMD的光源係,使用把合波雷射光源之光纖的 出射端部作陣列配列的高亮度之光纖陣列光源,所以可獲得 高輸出且深的焦點深度,且因可獲得高的光密度輸出,所以可 執行高速且高精細成型。再者,因各光纖光源的輸出變大,使 得爲獲得所期望的輸出所必要的光纖光源數變少,所以可圖 謀光成型裝置的低成本化。 特別是在本實施形態中,由於使光纖的出射端的包層直徑 設定爲較入射端的包層直徑還小,所以發光部直徑係變更小, 可圖謀光纖陣列光源更加高亮度化。依此成爲可更精細的成 型。 此外、在上述的實施形態中,雖然已針對將DMD的微鏡 作部分地驅動之例加以說明,但是即使是在對應指定方向之 方向的長度爲比交叉於該指定方向的方向之長度還長的基板 上,使用因應各個控制信號、以2維配列有可變更反射面角 度之多數個微鏡的細長DMD,由於用以控制反射面之角度的 微鏡個數變少,所以可加速調變速度。 -27 - 1263798 以下茲針對以上所說明之實施形態之變形例作說明。〔其 他空間調變元件〕 在上述的實施形態中,雖然已針對將DMD的微鏡作部分 地驅動之例加以說明,但是即使是在對應指定方向之方向的 長度爲比交叉於該指定方向的方向之長度還長的基板上,使 用因應各個控制信號、以2維配列有可變更反射面角度之多 數個微鏡的細長DMD,由於用以控制反射面之角度的微鏡個 數變少,所以可加速調變速度。 上述的實施形態中,雖然已針對作爲空間調變元件之 具備有DMD的曝光頭加以說明,例如,即使在使用有MEMS (微 機電系統)型之空間調變元件(SLM )或使用有依電氣光學 效果而調變透過光之光學元件(PLZT元件)及液晶光遮板 (FLC )等,即使在使用除MEMS型以外之空間調變元件的 場合,對基板上所配列之全部畫素部、藉由使用一部分之畫 素部,因爲可使每1畫素、每1主掃描線的調變速度加速,所 以可獲得同樣的效果。 此外,所謂的MEMS係以I C製程爲基礎的微機械技術所成 之微尺寸的感測器、致動器,然後把控制電路予以積體化的 微系統之總稱,所謂的MEMS型之空間調變元件係意味著利 用靜電力之電氣機械動作所驅動之空間調變元件。 〔雷射驅動方法〕 光纖陣列光源所包含之各GaN系半導體雷射係可爲連續驅 動也可爲脈波驅動。依脈波驅動的雷射光來曝光係可防止熱 擴散,成爲可高速且高精細的成型。脈波寬係短者較好,1 p s e c -28- 1263798 〜lOOnsec爲較佳,lpsec〜300psec係更好。此外,GaN系半 導體雷射係難以產生稱爲COD (光學損害)之光出射端面的 破損,係具高可靠性,且可容易實現lpsec〜3 00psec的脈波 寬。 〔其他曝光方式〕 如第1 8圖所示,與上述的實施形態同樣地,以掃描器1 62 對X方向之1次掃描來將感光材料150全面作曝光也可以, 如第19 ( A)及19 ( B)圖所示,以掃描器162將感光材料150 往X方向掃描之後,使掃描器162在Y方向移動1步,再往X 方向執行掃描般地反覆掃描和移動,以複數回的掃描將感光 材料150的全面予以曝光也可以。此外,在本例中,掃描器162 係具備有18個曝光頭166。 一般在成型3維模型之光成型方法中,伴隨樹脂之硬化的 重合收縮、依硬化時產生之重合熱而成高溫的樹脂係在常溫 被冷卻而產生依熱應變所造成之硬化收縮,伴隨著此等硬化 之收縮,係具有成型物熱應變、成型精度降低之問題。特別 是,在將包含複數個畫素的區域作同時曝光(面曝光)以成 型成平板狀之場合,成型物係相對於積層方向以凸狀朝下側 翹曲。爲了防止依此種硬化收縮之應變的發生,係將曝光區 域分成複數個區域再加以依序曝光者係較佳。 例如,把光硬化性樹脂之同一液面作複數次掃描,在第1次 的掃描,在曝光成型形狀的輪郭線且使光硬化性樹脂硬化之 後,在第2次以後的掃描,曝光輪郭線的內部且使光硬化性 樹脂硬化,依此、應變的發生係被防止。 -29- 1263798 又,如第3 0 ( A )圖所示,把曝光區域分割成多數個畫素, 將此多數個畫素區分成,由相互不鄰接的畫素102所構成之 第1群,和由相互不鄰接的畫素104所構成之第2群等2群, 在對各群作掃描曝光也可以。晝素102和畫素1〇4係構成黑 白相間圖案般地交互配列著。在第3 0 ( A )圖係表示曝光區 域的一部分,但是在使用具備有例如100萬晝素的DMD之曝 光頭的場合,可因應DMD的畫素數把曝光區域分割成1 00萬 個晝素。 首先,在第1次的掃描,如第30(B)圖所示,曝光屬第1 群的畫素102,在第2次的掃描,如第30 CC)圖所示,曝光 屬第2群之畫素104。藉此,畫素和畫素之間隙被掩埋,光硬 化性樹脂之液面的曝光區域全面被曝光。 在第1次的掃描、同時被曝光的第1群之畫素彼此相互不 鄰接,在第2次的掃描、同時被曝光的第2群之畫素彼此也 相互不鄰接。如此鄰接的畫素因爲沒有被同時曝光,所以依 硬化收縮的應變係不傳至鄰接的畫素。亦即,把曝光區域全 體予以同時曝光時,依硬化收縮的應變係伴隨著傳播曝光區 域而變大,雖然會產生相當的應變,但是在此例中,硬化收 縮係僅在1畫素的範圍產生,依硬化收縮的應變不傳至鄰接 的畫素。藉此,在積層成型物中之應變的產生係顯著被抑制, 成爲可高精度的成型。 上述之實施形態的曝光裝置中,藉由掃描器之1次的掃 描可將光硬化性樹脂的液面以任意的圖案曝光。因此,依複 數次的掃描所分割之各區域曝光係比較容易。 - 30- 1263798 〔光硬化性樹脂〕 以在光成型所使用之液狀的光硬化性樹脂而言,一般係使 用依光自由基聚合反應而硬化之聚胺甲酸酯系樹脂、或依光 陽離子聚合反應而硬化之環氧樹脂系樹脂。又,可使用在常 溫爲凝膠狀態、當受雷射照射而被賦予熱能時則轉移成溶膠 狀態之溶膠-凝膠變換型的光硬化性樹脂。在使用溶膠-凝膠 變換型的光硬化性樹脂之光成型方法中,因爲係在凝膠狀而 非液狀狀態的成型面執行曝光、硬化,所以成型物係形成在 凝膠狀的樹脂中,因此具有不需用以支持成型物的支撐部分 或連結部分之優點。 在對指定區域執行同時曝光的線曝光、區域曝光之場合, 對上述之溶膠-凝膠變換型的光硬化性樹脂使用添加有熱傳 導性之樹脂係較佳。藉由添加熱傳導性之塡充劑,熱擴散性 係被發揮,在成型物中之熱應變的發生被防止。特別是,在溶 膠-凝膠變換型之光硬化性樹脂中,與通常的樹脂不同、可在 不使塡充劑沈降之情形下均一地分散,所以可維持熱擴散 性。 〔其他雷射裝置(光源)〕 上述的實施形態中,係針對使用具備有複數個合波雷射光 源的光纖陣列光源之例子加以說明,但是雷射裝置並不局限 在把合波雷射光源予以陣列化的光纖陣列光源。例如,可使 用把具備1條用以出射由具有1個發光點的單一半導體雷射 所入射之雷射光之光纖的光纖光源被陣列化的光纖陣列光 線。但是更好爲焦點深度被取深之合波雷射光源。 -31- 1263798 又,以具備有複數個發光點之光源而言,例如,如第2〇圖所 示,可使用在熱塊1 00上配列有複數個(例如7個)晶片狀 之半導體雷射LD 1〜LD7的雷射陣列。又,如第2 1 ( A )圖所 示,在指定方向配列有複數(例如,5個)個發光點1 1 〇 a之 晶片狀的多腔雷射1 1 0係爲人所知悉。多腔雷射1 1 〇與配列 晶片狀的半導體雷射相較下,係可高精度地配列發光點,可容 易地把各發光點所出射的雷射光束予以合波。但是,發光點 變多則於雷射製造時在多腔雷射1 1 0變得容易產生變形,所 以發光點1 1 0 a之個數係設定爲5個以下較佳。 本發明之曝光頭中,可將此多腔雷射110或如第21(B) 圖所示,在熱塊100上與各晶片之發光點1 10a之配列方向相 同方向上配列有複數個多腔雷射110之多腔雷射陣列作爲雷 射裝置(光源)來使用。 又,合波雷射光源並不被限定於用以把由複數個晶片狀之 半導體雷射所出射的雷射光予以合波者。例如,如第2 2圖所 示,可使用具備有複數(例如,3個)個發光點1 1 0 a之晶片 狀的多腔雷射1 1 〇之合波雷射光源。此合波雷射光源係構成 爲具備有多腔雷射110、1條多模光纖130、以及集光透鏡 120。多腔雷射110係例如可以振盪波長爲405nm的GaN系 雷射二極體來構成。 上述的構成中,由多腔雷射之複數個發光點ii〇a所出 射的雷射光束B係各自由集光透鏡丨20所集光而入射於多模 光纖1 3 0的核心1 3 0 a。入射到核心1 3 0 a的雷射光係在光纖 內傳送且合波爲1條而出射。 -32- 1263798 在與上述多模光纖丨3, 〇之核心直徑略等寬度內並設 射110之複數個發光點ll〇a,同時作爲集光透鏡120, 與多模光纖丨3 0之核心直徑略等焦點距離之凸透鏡或 腔雷射1 1 0之出射光束僅在垂直其活性層之面內准直 透鏡,藉此可提升雷射光束B對多模光纖1 3 0的結合交 又,如第23圖所示,可使用具備有複數(例如,3個 光點之多腔雷射Γ1 0、在熱塊1 1 1上具備有以等間隔 數(例如,9個)個多腔雷射1 1 0之雷射陣列1 40的 射光源。複數個多腔雷射1 1 0係配列在與各晶片之 110a的配列方向相同方向而固定。 第23圖所示之合波雷射光源係具備有:雷射陣列 對應各多腔雷射1 1 0而配置之複數個透鏡陣列1 1 4 ; 雷射陣列140與複數個透鏡陣列1 14之間的1條杆 1 13 ; 1條多模光纖130 ;以及集光透鏡120。透鏡陣 係具備有對應多腔雷射110之發光點的複數個微透鏡 此合波雷射光源係具備有:雷射陣列1 40 ;對應各 射1 1 0而配置之複數個透鏡陣列1 1 4 ;配置在雷射陣 與複數個透鏡陣列1 1 4之間的1條杆式透鏡1 1 3 ; 1 光纖1 3 0 ;以及集光透鏡1 20。透鏡陣列1 1 4係具備 多腔雷射110之發光點的複數個微透鏡。 上述的構成中,複數多腔雷射110之複數個發光點 各自出射的雷射光束B,係各自依杆式透鏡1 1 3而被 指定方向之後,藉透鏡陣列1 1 4之各微透鏡而平行 被平行光化的雷射光束L係由集光透鏡120集光而入 - 3 3 - 多腔雷 係使用 來自多 的杆式 (率。 )個發 配列複 合波雷 發光點 140 ; 配置在 式透鏡 列1 1 4 〇 多腔雷 列1 4 0 條多模 有對應 10a之 集光在 光化。 射至多 1263798 模光纖1 3 0的核心1 3 0 a。入射至核心Π 0 a的雷射光係在光 纖內傳,、合波成1條而出射。 接著要介紹其他合波雷射光源的例子。此合波雷射光源係 如第24 ( A)及24 ( B)圖所示,在略矩形狀之熱塊180上搭 載有光軸方向的斷面爲L字狀的熱塊1 82,在2個熱塊間形 成有收納空間。在L字狀的熱塊182上面,以陣列狀配列 有複數個發光點(例如,5個)的複數(例如,2個)多腔雷 射110係在與各晶片之發光點ll〇a的配列方向相同方向以 等間隔配列而固定。 略矩形狀的熱塊1 8 0形成有凹部,在熱塊1 8 0的空間側上 面,以陣列狀配列有複數個發光點(例如,5個)複數(例 如,2個)之多腔雷射110,係其發光點被配置成位在與配置 在熱塊1 82之上面的雷射晶片之發光點相同的鉛直面上。 多腔雷射1 1 0之雷射光出射側係配置有,因應各晶片的發 光點110a而配列有准直透鏡之准直透鏡陣列184。准直透 鏡陣列1 84,係各准直透鏡之長度方向和和雷射光束之視角 爲大的方向(速軸方向)一致,而各准直透鏡之寬度方向和 視角爲小的方向(遲軸方向)一致般地配置。如此,藉由 將准直透鏡陣列化而成一體化,雷射光之空間利用效率係提 升而可謀求合波雷射光源之高輸出化,同時可使零件數減少 且低成本化。 又,准直透鏡陣列1 84之雷射光出射側係配置有,1條多模 光纖1 3 0、以及把雷射光束集光至此多模光纖1 3 0的入射端 且結合的集光透鏡1 2 0。 一 34- 1263798 上述的構成中,配置在雷射塊18〇、182上之複數多腔雷射 no之複數個發光點i〇a所各自出射的雷射光束B係各自被 准直透鏡陣列1 8 4所平行光化,依集光透鏡1 2 0而被集光以 入射至多模光纖1 3 0之核心1 3 0 a。入射至核心1 3 0 a之雷射 光係在光纖內傳送且被合波成1條而出射。 此合波雷射光源係如同上述,藉由多腔雷射之多段配置 和准直透鏡之陣列化,特別可圖謀高輸出化。藉由使用此合 波雷射光源,因爲可構成高亮度之光纖陣列光源或束光纖光 源,所以特別適合作爲構成本發明之曝光裝置的雷射光源之 光纖光源。 此外,把上述之各合波雷射光源收納至罩內,可構成把多模 光纖1 3 0之出射端部由其罩引出的雷射模組。 又,在上述實施形態中,已說明了在合波雷射光源之多模 光纖的出射端,與核心直徑爲與多模光纖相同且包層直徑爲 較多模光纖還小之其他光纖結合,以圖謀光纖陣列光源之高 亮度化的例子,例如把包層直徑爲1 2 5 /z m、8 0 // m、6 0 // m等 之多模光纖30在出射端不結合其他光纖之下來使用也可 以。 〔光量分布補正光學系統〕 上述的實施形態中,係在曝光頭使用由1對組合透鏡所構 成之光量分布補正光學系統。此光量分布補正光學系統係使 在各出射位置的光束寬度變化,以使周邊部對接近光軸之中 心部的光束寬度之比與入射側相較下,係出射側的會變小,當 來自光源之平行光束對D M D照射時,在被照射面之光量分布 - 35 - 1263798 係成爲略均一般地作補正。以下,針對此光量分布補正光學 系統的作用加以說明。 首先,如第25(A)圖所不,以入射光束及出射光束在其全 體之光束寬度(全光束寬度)HO、H1爲相同之場合加以說 明。此外,在第2 5 ( A )圖中,以符號5 1、5 2所示的部分係 表示假設爲光量分布補正光學系統中之入射面及出射面者。 在光量分布補正光學系統中,設定入射至接近光軸Z 1的中 心部之光束與入射至周邊部之光束之各自的光束寬度hO、hi 爲相同(hO二h 1 )。光量分布補正光學系統,對在入射側爲同 一光束寬度hO、h 1的光,有關中心部的入射光束,係放大其 光束寬度hO,反之,對周邊部之入射光束,係施加使其光束寬 度縮小的作用。亦即,有關中心部之出射光束的寬度h 1 0和 周邊部之出射光束的寬度hll,係成爲hll<hlO。若以光束 寬度的比率來表示,則周邊部對在出射側之中心部的光束寬 度比[h 1 1 / h 1 0 ]與在入射側之比(h 1 / hO = 1 )相較下係變小 (hi 1/hlO) < 1 ) ° 如此,藉由使光束寬度變化,可將通常光量分布變大之中 央部的光束往光量不足的周邊部產生,整體而言、在不降低 光的利用效率下,被照射面之光量分布係被略均一化。均一 化的程度係例如,在有效區域內之亮斑爲3 0 %以內,較好爲 設定成2 0 %以內。 依此種光量分布補正光學系統之作用、效果也與在入射側 和出射側改變全體的光束寬度之場合(第2 5 ( B )、2 5 ( C )) 同樣。 -36- 1263798 第2 5 ·< B 圖係表示把入射側之全體光束寬度HO縮小成 寬度H2加以出射的場合(HO > H2 )。在此種場合,光量分布 補正光學系統係,在入射側爲同一光束寬度hO、h 1的光,於 出射側,中央部的光束寬度h 1 0係變得比周邊部還大,反之, 周邊部之光束寬度h 1 1係變得比中心部還小。若以光束的縮 小率來考量,則施予把對中心部的入射光束之縮小率設定爲 較周邊部小,而把對周邊部之入射光束的縮小率設定爲較中 心部大的作用。在此場合,周邊部的光束寬度對中心部的光 束寬度之比「Η 1 1 / Η 1 0」係與在入射側的比(h 1 / hO二1 )相 較下變小((h 1 1 / h 1 0 ) < 1 )。 第25 ( C )圖係表示把入射側之全體的光束寬度HO放大 成寬度H3加以出射的場合(HO < H3 )。即使在此種場合,光 量分布補正光學系統係設定成,把入射側爲同一光束寬hO、 h 1的光,於出射側,中央部的光束寬度h 1 0係與在周邊部相 較下變大,反之,周邊部的光束寬度hll與在中心部相較下係 變小。若以光束的放大率加以考量,與周邊部相較下係把對 中心部的入射光束之放大率設大,施予把對周邊部的入射光 束之放大率設爲較在中心部爲小的作用。在此場合,對中心 部之光束寬度的周邊部之光束寬度比「hll/hlO」,係與在入 射側的比(h 1 / hO = 1 )相較下變小((h 1 1 / h 1 0 ) < 1 )。 如此,光量分布補正光學系統係使在各出射位置的光束寬 度變化,因爲把周邊部的光束寬度相對於接近光軸Z 1之中心 部的光束寬度之比設定爲,與入射側相較下,出射側係變小, 所以在入射側爲同一光束寬度的光,於出射側,中央部的光 - 37- 1263798 束寬度係變得比周邊部還大,周邊部的光束寬度係變得比中 心部還小。藉此,可將中央部的光束往周邊部產生,在光學系 統全體之光利用效率不降低之下,可形成光量分布被略均一 化之光束斷面。 以下,表示作爲光量分布補正光學系統來使用之成對的組 合透鏡之具體的透鏡資料的1例。在此例中,如同光源爲雷 射陣列光源之場合一般,表示在出射光束的斷面之光量分布 爲高斯分布時之透鏡資料。此外,在單模光纖的入射端連接 有1個半導體雷射的場合,來自光纖的射出光束之光量分布 係成爲高斯分布。本實施形態也可適用在此種場合。又,藉 由把多模光纖的核心直徑設小以接近單模光纖的構成等,則 接近光軸之中心部的光量係也可適用在比周邊部的光量還大 的場合。 下列表1係表示基本透鏡資料。 【表1】 基本透鏡資料 Si ri di Νι (面編號) (曲率半徑) (面間隔) (折射率) 01 非球面 5.000 1.52811 02 〇〇 50.000 03 〇〇 7.000 1.52811 04 非球面 由表1可知,成對的組合透鏡係由旋轉對稱之2個非球面 透鏡所構成。將配置在光入射側之第1透鏡的光入射側的面 設爲第1面、光出射側的面設爲第2面,第1面係非球面形 -38- 1263798 狀。又,配置在光出射側之第2透鏡的光入射側之面設爲第 3面、光出射側之面設爲第4面,第4面係非球面形狀。 表1中,面編號Si係表示第i(i=l〜4)面之編號,曲率 半徑r i係表示第i面的曲率半徑,面間隔d i係表示第i面 和第1 + 1面之光軸上的面間隔。面間隔d i値的單位爲毫米 (1mm)。折射率Ni係表示相對於具備有第丨面之光學要素 的波長40 5 nm之折射率的値。 下列表2係表示第1面及第4面的非球面資料。 【表2】 非球面資料 第1面 第4面 C —1 · 4098E- 02 一 9 . 8 5 06Ε— 03 K 一 4 · 2192E十 00 一 3 . 6 2 5 3Ε+ 01 a 3 —1 · 0027E— 04 一 8 · 9980Ε- 05 a 4 3.0591E — 05 2 · 3060Ε— 05 a 5 —4.5115E— 07 一 2·2860Ε— 06 a 6 -8 . 2819E- 09 S . 766 1 Ε- 08 a7 4 . 1 020E - 12 4 · 4028Ε- 10 a8 1.223 1 - 1 3 1 · 3624Ε- 12 a9 5·3753E- 16 3 . 3 9 6 5 Ε - 1 5 a 1 0 1 ·6315Ε— 18 7 . 4823Ε- 18 上述之非球面資料係以表示非球面形狀之下式(A )中的 係數所表示。 -39- 1263798 〔數式1〕The GaN-based semiconductor lasers LD1 to LD7 are all common in oscillation wavelengths (for example, 40 5 nm), and the maximum output is also common (for example, multimode laser is i〇〇mw and single mode laser is 30 mW). Further, in the GaN-based semiconductor lasers LD1 to LD7, a laser having a resonance wavelength other than the above-described 1263798 4 Ο 5 n m can be used in the wavelength range of 350 nm to 450 nm. The above-described combined laser light source is housed in a box-like package 40 having an opening as shown in Figs. 1 and 2, together with other optical elements. The package 40 is provided with a package cover 4 1 made by closing its opening, and a sealing gas is introduced after the degassing process, by closing the opening of the package 40 with the package cover 41, and by the package 40 and the package cover. In the closed space (sealed space) formed by 4 1 , the above-mentioned combined laser light source is hermetically sealed. A substrate 42 is fixed on the bottom surface of the package 40. The upper surface of the substrate 42 is mounted with the thermal block 10, a collecting lens holder for holding the collecting lens 20, and an incident end for holding the multimode fiber 30. Part of the fiber holder 46. The exit end of the multimode fiber 30 is led out of the package by an opening formed in the wall surface of the package 40. Further, a collimator lens holder 44 is attached to the side surface of the thermal block 10, and the collimator lenses 1 1 to 17 are held. An opening is formed in the lateral wall surface of the package 40, and the wiring 47 for supplying a driving current to the GaN-based semiconductor lasers LD1 to LD7 is led out of the package. Further, in Fig. 13, in order to avoid cumbersome drawing, only the plurality of GaN-based semiconductor lasers are numbered with respect to the GaN-based semiconductor laser LD7, and only a plurality of collimating lenses are given collimation. The lens 1 7 is numbered. Fig. 14 shows the front shape of the mounting portions of the above-described collimating lenses 1 1 to 17 . Each of the collimator lenses 1 1 to 17 is formed so as to be elongated in a plane parallel to the optical axis including the aspherical circular lens. The elongated shape of the collimating lens can be formed, for example, by molding a resin or an optical glass. The collimator lenses 11 to 17 are arranged such that the longitudinal direction thereof is closely arranged in the arrangement direction of the light-emitting points of the GaN-based semiconductor Rays-20 - 1263798 to the LDs LD1 to LD7 (the left-right direction of FIG. 14). Arrangement direction. On the other hand, in the GaN-based semiconductor lasers LD1 to LD7, an active layer having a light-emitting width of 2 #m is used, and a direction parallel to the active layer and a viewing angle in a direction perpendicular to each other are, for example, 10° and 30°. The lasers of the respective laser beams B1 to B7 are emitted. These GaN-based semiconductor lasers LD1 to LD7 are arranged in a line in a direction in which the light-emitting points are parallel to the active layer. Therefore, the laser beams B1 to B7 emitted from the respective light-emitting points are as described above, and the collimating lenses 1 1 to 17 7 of the elongated shape are aligned in the direction in which the viewing angle is large, and the viewing angle is the same. The small direction is incident in a state in which the width direction (the direction orthogonal to the longitudinal direction) coincides. That is, the width of each of the collimating lenses 1 1 to 17 is 1.1 mm and the length is 4.6 mm, and the beam diameters of the horizontal and vertical beams incident on the laser beams B1 to B7 are 0. 9 mm, 2, respectively. · 6mm. Further, each of the collimator lenses 1 1 to 17 has a focal length of 2 mm, NA = 0.6, and a lens arrangement pitch = 1.25 mm. The collecting lens 20 is formed by extending a region including an optical axis of a circular lens having an aspherical surface in a parallel plane, and the alignment direction of the collimator lenses 1 1 to 17 is formed to be long in the horizontal direction. And a shape that is short in a direction perpendicular thereto. This collecting lens 20 has a focal length f 2 = 2 3 mm and N A = 0. The collecting lens 20 is also formed by, for example, molding a resin or an optical glass. [Operation of Light Forming Apparatus] The operation of the light forming apparatus will be described below. In each of the exposure heads 166 of the scanner 162, the GaN-based semiconductor lasers LD1 to LD7 constituting the 1263798 multiplexed laser light source of the optical fiber array light source 66 are respectively emitted in a diverging light state, and the laser beams B1, B2, B3, and B4 are emitted. Each of B5, B6, and B7 is parallelized by the corresponding collimating lenses 1 1 to 17 . The laser beams B1 to B7 which are collimated in parallel are collected by the collecting lens 20 and converged to the incident end face of the core 30 a of the multimode fiber 30. In this example, the collimating lenses 11 to 17 and the collecting lens 20 constitute a collecting optical system, and the collecting optical system and the multimode optical fiber 3 constitute a combined optical system. That is, the laser beam 20 is collected by the collecting lens 20, and the laser beam B1 to B7 collected as described above is incident on the core 30a of the multimode fiber 30 to be transmitted in the optical fiber, and is combined into one laser beam B. The fiber 31 is coupled to the exit end of the multimode fiber 30. In each of the laser modules, when the combined efficiency of the laser beams B1 to B7 to the multimode fiber 30 is 〇85, and the outputs of the GaN-based semiconductor lasers LD1 to LD7 are 30 mW, the fibers arranged in an array are arranged. The 3 1 series can obtain a combined laser beam B with an output of about 180 m W (= 3 0 M w X 0 . 8 5 X 7 ). Therefore, the output of the laser emitting portion 68 in which six optical fibers 31 are arranged in an array is about 1 W (= 180 mW X 6 ). The laser emitting portion 68 of the optical fiber array light source 66 has such high-luminance light-emitting points arranged in a row along the main scanning direction. Since a conventional optical fiber light source that combines laser light from a single semiconductor laser to one optical fiber has a low output, if a plurality of columns are not arranged, a desired output cannot be obtained, but the combined laser used in the present embodiment The light source is high output, so a few columns, for example even one column, can achieve the desired output. For example, in a conventional optical fiber source in which a semiconductor laser and an optical fiber are combined in a one-to-one relationship, generally, in the case of a semiconductor laser, a laser having an output of 30 mW (milli-22 - 1263798 watts) is used, and an optical fiber is used. In this case, since a multimode fiber having a core diameter of 5 Ο μ m and a cladding diameter of 1 2 5 " m, ΝΑ (number of openings) 〇. 2 is used, if an output of about 1 W (watt) is to be obtained, The mode fiber must be bundled with 4 8 (8 X 6 ), and the area of the light-emitting area is 0.62 mm2 (0.675 mm x 〇.925 mm), so the degree of the laser exit portion 68 is i.6xi06 (W/m2). The brightness of each fiber is 3.2X106 (W/m2). On the other hand, in the present embodiment, as described above, the output of 1 IV can be obtained by the multimode fiber 6 treaty, and the area of the light-emitting region of the laser emitting portion 68 is 0.008 x 1 mm 2 (0.3 2 5 mm×0.025_), so that the laser is emitted. The luminance of the incident portion 68 is 123 xi06 (W/m 2 ), which is 80 times higher than that of the conventional image. Further, the brightness of each of the optical fibers is 90X1 O6 (W/m2), which is 28 times higher than that of the conventional image. Here, the difference between the focus depths of the conventional exposure head and the exposure head of the present embodiment will be described with reference to Figs. 1 5 (A) and 1 5 (B). The diameter of the light-emitting region of the bundled fiber-optic light source of the conventional exposure head in the sub-scanning direction is 0.675 mm, and the diameter of the light-emitting region of the optical fiber array light source of the exposure head in the sub-scanning direction is 0. 05 5 mm. As shown in the first 5 (-A)-picture, in the conventional exposure head, since the light-emitting area of the light source (bundle fiber light source) 1 is large, the angle of the light beam incident on the DMD 3 is increased, and as a result, the scanning surface is applied. 5 The angle of the incident beam becomes larger. For this reason, the beam diameter is easily too wide with respect to the collecting direction (deviation of the focus direction). On the other hand, as shown in Fig. 15(B), in the exposure head of the present embodiment, since the diameter of the light-emitting region of the optical fiber array light source 66 is small in the sub-scanning direction, the angle of the light beam incident on the DMD 50 by the lens system 67 is small. The result is smaller, and the result 'the angle of the beam incident on the sweep -23-1263798 is smaller. That is, the depth of focus becomes deeper. In this example, the diameter of the light-emitting region in the sub-scanning direction is about 30 times that of the conventional one, and a depth of focus equivalent to a slightly wound limit can be obtained. Therefore, it is suitable for exposure of minute spots. The effect of this depth of focus is that the greater the amount of light necessary for the exposure head, the more significant and effective. In this example, the 1 pixel size projected onto the exposure surface is 1 〇 M m χ 1 Ο # m. In addition, the DMD-based reflective spatial modulation elements, such as the 15th (A) and 15(B) diagrams, are used to illustrate the development of the optical relationship. The image data corresponding to the exposure pattern of one layer is input to a controller (not shown) connected to the DMD 50, and is temporarily stored in the frame of the controller. This image data indicates the density of each pixel constituting the image in binary (the presence or absence of dot recording). The scanner 162 is moved at a constant speed from the upstream side to the downstream side in the sub-scanning direction along the guide portion 158 by a driving device (not shown). When the scanner 1 62 starts moving, the complex lines of the portrait data stored in the frame memory are sequentially read, and the control of each exposure head 1 66 is generated based on the image data read by the data processing unit. signal. Then, the mirror driving control unit controls the opening and closing of the micromirrors of the DMDs 50 of the respective exposure heads 166 in accordance with the generated control signals. When the laser light is irradiated to the DMD 50 by the fiber array light source 66, the laser light reflected when the micromirror of the DMD 50 is turned on is imaged on the liquid surface of the photocurable resin 150 via the lens systems 54 and 58 ( The exposed surface is 56. In this way, the laser light emitted by the fiber array light source 66 is turned on and off in each pixel, and the photocurable resin 150 is in the same number of pixel units as the number of pixels used in the DMD 50 (exposure area 168). ) is hardened by exposure. - 2 4 - 1263798 Further, by the scanner 1 62 being moved at a constant speed, the liquid surface of the photocurable resin 15 5 is subjected to sub-scanning to form a strip-shaped sintered region of each exposure head 1 66. In the present embodiment, in the present embodiment, in the DMD 50, the micromirror array in which 800 micromirrors are arranged in the main scanning direction has 600 groups arranged in the sub-scanning direction, but in the present embodiment. In the form, only a part of the micromirror columns (for example, 800 X 1 00 columns) are controlled by the controller. As shown in Fig. 16(A), a micromirror array disposed at the center of the DMD 50 may be used. As shown in Fig. 16 (Β), a micromirror array disposed at the end of the DMD 50 may be used. Further, when a part of the micromirrors is defective, it is necessary to use a micromirror array or the like which does not cause a defect, and the micromirror array to be used can be appropriately changed depending on the situation. The data processing speed of the DMD50 has its limit, and the modulation speed per line is determined in proportion to the number of pixels to be used. Therefore, the modulation speed per line is used by using only a part of the micromirror column. Faster. On the other hand, in the case of continuously exposing the exposure head to the relative movement mode, it is not necessary to use all of the pixels in the sub-scanning direction. For example, among the 600 sets of micromirror columns, when only 300 sets are used, compared with the case where all 600 sets are used, the line can be adjusted twice as fast. Further, among the 600 sets of micromirror rows, when only 200 sets are used, compared with the case where all 600 sets are used, it is possible to change the number of lines per line three times faster. That is, an area of 50 mm can be exposed in the sub-scanning direction for 17 seconds. Furthermore, when only the 100 group is used, the line can be adjusted 6 times faster. That is, an area of 500 mm can be exposed in the sub-scanning direction for 9 seconds. -25 - 1263798 The number of micromirror columns to be used, that is, the number of micromirrors arranged in the sub-scanning direction is preferably 10 or more and 200 or less, more preferably 1 〇 or more and 1 〇 〇 or less. Since the area of each micromirror corresponding to 1 pixel is 丨5 V m X丨5 V m, the area converted to the right side of DMD50 is better than the area of 12 mm X 3 mm or less, and 1 2 mm X 1 The area of 50 // m or more and 1 2mm X 1. 5mm or less is better. If the number of micromirror columns to be used is within the above range, the laser light emitted from the fiber array light source 66 is applied to the lens system 67 as shown in Figs. 1 7 (A) and 17 (B). The DMD 50 can be irradiated by parallel photochemicalization. It is preferable that the irradiation area in which the laser light is irradiated by the DMD 50 coincides with the use area of the DMD 50. If the irradiation area is wider than the use area, the utilization efficiency of the laser light is lowered. On the one hand, in view of the number of micromirrors arranged in the sub-scanning direction of the lens system 67, although it is necessary to set the diameter of the sub-scanning direction of the light beam collected on the DMD 50 to be small, the number of micromirror columns used is not When the time is 10, the angle of the light beam incident on the DMD 50 becomes large, and the depth of focus of the light beam on the scanning surface 56 becomes shallow, which is not preferable. Further, from the viewpoint of the modulation speed, it is preferable that the number of micromirrors used is 200 or less. In addition, the DMD is a reflective spatial modulation element, and the 17th (7) and 17(B) diagrams are used to illustrate the development of the optical relationship. When the one-stage sub-scanning of the scanner 162 is completed, the scanner 162 returns to the origin on the most upstream side along the guide portion 158 by a driving device (not shown). Then, the lead screw 155 is rotated by a drive motor (not shown) to lower the lift stage 152 by a predetermined amount, and the hardened portion of the photocurable resin 150 is allowed to sink below the liquid surface to form a liquid photocurable resin 1 50 is filled with the top of the hardened part. Then, the image data of the sub-layer is again subjected to the sub-scanning by the scanner 162 after being input to the controller (not shown) connected to the -26 - 1263798 MD50. Thus, the exposure (hardening) by the sub-scan and the lowering of the stage are repeatedly performed, and the three-dimensional model is formed via the laminated hardened portion. As described above, the optical molding apparatus of the present embodiment includes a DMD having 600 micromirrors arranged in the main scanning direction in the sub-scanning direction, and 600 sets are arranged in the sub-scanning direction. Since the micromirror train is controlled in a driving manner, the modulation speed per line becomes faster than in the case of driving all the micromirror rows. According to this, high-speed exposure and molding can be achieved. Moreover, since the light source system for illuminating the DMD uses a high-intensity optical fiber array light source in which the emission end portions of the optical fibers of the multiplexed laser light source are arrayed, a high output and a deep depth of focus can be obtained, and high visibility is obtained. The optical density output allows high speed and high precision molding to be performed. Further, since the output of each of the optical fiber light sources is increased, the number of optical fiber sources necessary for obtaining a desired output is reduced, so that the cost of the optical molding apparatus can be reduced. In particular, in the present embodiment, since the cladding diameter of the exit end of the optical fiber is set to be smaller than the cladding diameter at the incident end, the diameter of the light-emitting portion is changed little, and the optical fiber array light source can be made more bright. This makes it possible to make a more elaborate form. Further, in the above-described embodiment, an example in which the micromirror of the DMD is partially driven has been described, but the length in the direction corresponding to the specified direction is longer than the length in the direction crossing the specified direction. On the substrate, an elongated DMD having a plurality of micromirrors that can change the angle of the reflecting surface in two dimensions in response to each control signal is used, and since the number of micromirrors for controlling the angle of the reflecting surface is small, the modulation can be accelerated. speed. -27 - 1263798 Hereinafter, a modification of the embodiment described above will be described. [Other Spatial Modulation Element] In the above-described embodiment, an example in which the micromirror of the DMD is partially driven has been described. However, the length in the direction corresponding to the specified direction is longer than the direction intersecting the designated direction. On the substrate having a long length in the direction, an elongated DMD having a plurality of micromirrors that can change the angle of the reflecting surface in two dimensions in response to the respective control signals is used, and the number of micromirrors for controlling the angle of the reflecting surface is small. Therefore, the modulation speed can be accelerated. In the above-described embodiment, an exposure head including a DMD as a spatial modulation element has been described. For example, even a MEMS (Micro Electro Mechanical System) type spatial modulation element (SLM) or an electric device is used. The optical element (PLZT element) and the liquid crystal shutter (FLC) that are transmitted through the optical effect are modulated, and even when a spatial modulation element other than the MEMS type is used, all the pixel parts arranged on the substrate are By using a part of the pixel portion, the same effect can be obtained because the modulation speed per one pixel and one main scanning line can be accelerated. In addition, the so-called MEMS is a general term for micro-sized sensors and actuators based on micro-mechanical technology based on IC process technology, and then the control system is integrated. The so-called MEMS type space modulation A variable component means a spatially modulated component driven by an electromechanical action of electrostatic force. [Laser Driving Method] Each of the GaN-based semiconductor laser systems included in the optical fiber array light source may be continuously driven or pulse-driven. Exposure to laser light driven by pulse waves prevents thermal diffusion and enables high speed and high precision molding. The pulse width is shorter, preferably 1 p s e c -28- 1263798 ~ lOOnsec, and lpsec ~ 300 psec is better. Further, the GaN-based semiconductor laser system is less likely to cause breakage of the light-emitting end face called COD (optical damage), and is highly reliable, and can easily realize a pulse width of lpsec to 300 sec. [Other exposure method] As shown in Fig. 18, in the same manner as in the above embodiment, the photosensitive material 150 may be entirely exposed by the scanner 1 62 for one scan in the X direction, as in the 19th (A). As shown in FIG. 19(B), after the scanner 162 scans the photosensitive material 150 in the X direction, the scanner 162 is moved by one step in the Y direction, and then scanned and moved repeatedly in the X direction to perform scanning. The scanning may also fully expose the photosensitive material 150. Further, in this example, the scanner 162 is provided with 18 exposure heads 166. Generally, in the photoforming method for molding a three-dimensional model, a resin which is heated at a high temperature due to the recombination shrinkage of the resin and the heat of recombination generated during curing is cooled at a normal temperature to cause hardening and shrinkage by thermal strain, accompanied by The shrinkage of these hardenings has a problem of thermal strain of the molded product and a decrease in molding precision. In particular, when a region including a plurality of pixels is simultaneously exposed (surface exposure) to be formed into a flat shape, the molded article is warped toward the lower side in a convex shape with respect to the lamination direction. In order to prevent the occurrence of strain due to such hardening shrinkage, it is preferred to divide the exposed area into a plurality of areas and then sequentially expose them. For example, the same liquid surface of the photocurable resin is scanned in a plurality of times, and after the first scanning, the photocurable resin is cured in the exposure molding shape, and after the second and subsequent scanning, the exposure rotation line is exposed. The photocurable resin is hardened inside, and the occurrence of strain is prevented. -29- 1263798 Further, as shown in the figure 30 (A), the exposure area is divided into a plurality of pixels, and the plurality of pixels are divided into the first group consisting of pixels 102 that are not adjacent to each other. And two groups, such as the second group consisting of pixels 104 that are not adjacent to each other, may be scanned and exposed for each group. The alizarin 102 and the pixel 1〇4 are arranged in a black-and-white pattern. In the 30th (A) diagram, a part of the exposure area is shown. However, when an exposure head having a DMD of, for example, 1 million halogen is used, the exposure area can be divided into 100,000 units in accordance with the number of pixels of the DMD. Prime. First, in the first scan, as shown in the 30th (B) diagram, the pixels 102 belonging to the first group are exposed, and in the second scan, as shown in the 30th CC), the exposure is the second group. The picture is 104. Thereby, the gap between the pixels and the pixels is buried, and the exposed area of the liquid surface of the photohardenable resin is completely exposed. The pixels of the first group which are simultaneously exposed and scanned at the same time are not adjacent to each other, and the pixels of the second group which are simultaneously exposed and scanned at the same time are not adjacent to each other. Since the adjacent pixels are not exposed at the same time, the strain system according to the hardening contraction is not transmitted to the adjacent pixels. In other words, when the entire exposed area is simultaneously exposed, the strain strain depending on the hardening shrinkage increases with the spread of the exposed region, and although considerable strain occurs, in this example, the hardening shrinkage is only in the range of 1 pixel. The strain generated by the hardening shrinkage is not transmitted to the adjacent pixels. Thereby, the generation of strain in the laminated molded product is remarkably suppressed, and molding with high precision can be achieved. In the exposure apparatus of the above-described embodiment, the liquid surface of the photocurable resin can be exposed in an arbitrary pattern by scanning once by the scanner. Therefore, it is relatively easy to expose the respective regions divided by the plurality of scans. - 30- 1263798 [Photocurable resin] A liquid photocurable resin used for photo-forming is generally a polyurethane-based resin which is cured by photopolymerization or photo-resistance. An epoxy resin which is cured by cationic polymerization. Further, a sol-gel conversion type photocurable resin which is in a gel state at normal temperature and is transferred to a sol state when heat energy is applied by laser irradiation can be used. In the photoforming method using a sol-gel conversion type photocurable resin, since the exposure and hardening are performed on a molding surface in a gel state rather than a liquid state, the molded product is formed in a gel-like resin. Therefore, there is an advantage that a support portion or a joint portion for supporting the molded product is not required. In the case of performing line exposure or area exposure of simultaneous exposure to a predetermined area, it is preferable to use a resin having heat conductivity imparted to the sol-gel conversion type photocurable resin. By adding a thermally conductive ruthenium, thermal diffusivity is exerted, and the occurrence of thermal strain in the molded product is prevented. In particular, in the plastisol-gel-type photocurable resin, unlike the usual resin, the chelating agent can be uniformly dispersed without sedimentation, so that thermal diffusibility can be maintained. [Other laser device (light source)] In the above embodiment, an example of using a fiber array light source including a plurality of multiplexed laser light sources is described, but the laser device is not limited to the multiplexed laser light source. Arrayed fiber array light sources. For example, an optical fiber array having an optical fiber source having one optical fiber for emitting laser light incident from a single semiconductor laser having one light-emitting point can be used. But better for the depth of focus is taken deep into the combined laser source. Further, in the case of a light source having a plurality of light-emitting points, for example, as shown in FIG. 2, a plurality of (for example, seven) wafer-shaped semiconductor mines may be arranged on the heat block 100. Laser arrays of LD 1 to LD7. Further, as shown in Fig. 2 (A), a wafer-shaped multi-cavity laser 110 in which a plurality of (e.g., five) light-emitting points 1 1 〇 a are arranged in a predetermined direction is known. Compared with a wafer-shaped semiconductor laser, the multi-cavity laser 1 1 可 can accurately arrange the light-emitting points, and can easily combine the laser beams emitted from the respective light-emitting points. However, when the number of light-emitting points is increased, the multi-cavity laser is easily deformed at the time of laser production, and the number of light-emitting points 1 1 0 a is preferably 5 or less. In the exposure head of the present invention, the multi-cavity laser 110 or as shown in Fig. 21(B) can be arranged in the same direction on the thermal block 100 in the same direction as the arrangement direction of the light-emitting points 1 10a of the respective wafers. A multi-cavity laser array of cavity lasers 110 is used as a laser device (light source). Further, the multiplexed laser light source is not limited to those used to multiplex the laser light emitted from a plurality of wafer-shaped semiconductor lasers. For example, as shown in Fig. 2, a multi-chamber laser 1 1 合 combined laser light source having a plurality of (for example, three) light-emitting points 1 10 a can be used. The multiplexed laser light source is configured to include a multi-cavity laser 110, a multimode fiber 130, and a collecting lens 120. The multi-cavity laser 110 can be configured, for example, by oscillating a GaN-based laser diode having a wavelength of 405 nm. In the above configuration, the laser beam B emitted from the plurality of light-emitting points ii 〇 a of the multi-cavity laser is collected by the collecting lens 丨 20 and incident on the core 1 3 0 of the multimode fiber 130. a. The laser light incident on the core 130 h is transmitted in the optical fiber and is split into one and is emitted. -32- 1263798 A plurality of light-emitting points 11〇a are disposed within a width equal to the core diameter of the multimode fiber 丨3, 〇, and serve as a collecting lens 120, and a core of the multimode fiber 丨3 0 A convex lens or a cavity laser with a slightly equal focal length of diameter 1 1 0 of the outgoing beam is only collimated in the plane perpendicular to the active layer, thereby enhancing the bonding of the laser beam B to the multimode fiber 130 As shown in Fig. 23, a multi-cavity laser 具备 10 having a plurality of light spots (for example, three light spots, and a plurality of cavity lasers having an equal interval (for example, nine) on the heat block 11 1 can be used. The radiation source of the laser array 140 of 110 is emitted. The plurality of multi-cavity lasers 110 are arranged in the same direction as the arrangement direction of the 110a of each wafer, and the multiplexed laser light source shown in Fig. 23 is fixed. The system is provided with: a plurality of lens arrays 1 1 4 arranged in a laser array corresponding to each multi-cavity laser 110; a rod 1 13 between the laser array 140 and the plurality of lens arrays 1 14 ; a mode fiber 130; and a collecting lens 120. The lens array is provided with a plurality of microlenses corresponding to the light-emitting points of the multi-cavity laser 110. The source system is provided with: a laser array 1 40; a plurality of lens arrays 1 1 4 corresponding to each of the 1 1 0 shots; and a rod lens 1 disposed between the laser array and the plurality of lens arrays 1 1 4 1 3 ; 1 fiber 1 3 0 ; and collecting lens 1 20. Lens array 1 1 4 is a plurality of microlenses having a light-emitting point of multi-cavity laser 110. In the above configuration, a plurality of multi-cavity lasers 110 The laser beams B emitted from the respective illuminating points are respectively designated by the rod lens 1 1 3, and then the laser beams L which are parallelized and actinically paralleled by the respective microlenses of the lens array 1 14 are collected. The light lens 120 collects light into the -3 3 - multi-cavity mine system using a plurality of rod-type (rates) hair-distributing composite wave-ray light-emitting points 140; and is arranged in the lens array 1 1 4 〇 multi-chamber lightning column 1 4 0 multimodes have a corresponding set of 10a in the actinic light. Shoot at most 1263798 mode fiber 1 3 0 core 1 3 0 a. The laser light incident on the core Π 0 a is transmitted in the fiber, and the combined wave becomes one The following is an example of other multiplexed laser sources, as shown in Figures 24 (A) and 24 (B). A heat block 182 having an L-shaped cross section in the optical axis direction is mounted on the heat block 180 having a substantially rectangular shape, and a storage space is formed between the two heat blocks. The upper surface of the L-shaped heat block 182 is The plurality of (for example, two) multi-cavity lasers 110 arranged in a plurality of arrays of light-emitting points (for example, five) are arranged at equal intervals in the same direction as the arrangement direction of the light-emitting points 11a of the respective wafers. The slightly rectangular heat block 180 is formed with a concave portion, and a plurality of light-emitting points (for example, five) of a plurality of light-emitting points (for example, two) are arranged in an array on the space side of the heat block 180. The radiation 110 is arranged such that its light-emitting point is positioned on the same vertical plane as the light-emitting point of the laser chip disposed above the thermal block 128. The multi-chamber laser 110 light exiting side is provided with a collimating lens array 184 in which a collimating lens is arranged in response to the light emitting point 110a of each wafer. The collimating lens array 1 84 has the length direction of each collimating lens and the direction in which the viewing angle of the laser beam is large (the direction of the speed axis), and the width direction and the viewing angle of each collimating lens are small (latent axis) The direction is consistently configured. By integrating the collimating lenses into an array, the space utilization efficiency of the laser light is improved, and the output of the multiplexed laser light source can be increased, and the number of parts can be reduced and the cost can be reduced. Further, the laser light exiting side of the collimator lens array 184 is provided with one multimode fiber 130, and a collecting lens that combines the laser beam to the incident end of the multimode fiber 130. 2 0. In the above configuration, the laser beams B respectively emitted by the plurality of light-emitting points i 〇 a of the plurality of multi-cavity lasers disposed on the laser blocks 18 〇 182 are respectively collimated lens array 1 8 4 parallelized photons are collected by the collecting lens 120 to be incident on the core 1 3 0 a of the multimode fiber 130. The laser light incident on the core 130 h is transmitted in the optical fiber and is combined into one to be emitted. The multiplexed laser light source is as described above, and is multi-chambered in a multi-segment laser array and an array of collimating lenses, and is particularly capable of high output. By using this combined laser light source, it is particularly suitable as a fiber source for a laser light source constituting the exposure apparatus of the present invention because it can constitute a high-intensity fiber array light source or a bundle fiber light source. Further, by accommodating the above-described respective combined laser light sources in the cover, a laser module for guiding the exit end of the multimode optical fiber 130 from its cover can be constructed. Further, in the above embodiment, it has been explained that the exit end of the multimode optical fiber of the multiplexed laser light source is combined with another optical fiber having a core diameter which is the same as that of the multimode optical fiber and whose cladding diameter is smaller than that of the larger mode fiber. For example, in order to increase the brightness of the fiber array light source, for example, the multimode fiber 30 having a cladding diameter of 1 2 5 /zm, 80 //m, 60 //m, etc. is not combined with other fibers at the exit end. It can also be used. [Light quantity distribution correction optical system] In the above embodiment, the light amount distribution correction optical system composed of a pair of combined lenses is used in the exposure head. The light quantity distribution correction optical system changes the beam width at each of the exit positions so that the ratio of the peripheral portion to the beam width near the central portion of the optical axis is smaller than the incident side, and the outgoing side becomes smaller when When the parallel light beam of the light source is irradiated to the DMD, the light quantity distribution on the illuminated surface is slightly uniform and generally corrected. Hereinafter, the action of the light amount distribution correction optical system will be described. First, as shown in Fig. 25(A), the case where the incident beam and the outgoing beam have the same beam width (full beam width) HO and H1 are the same. Further, in the 25th (5th) diagram, the portions indicated by the symbols 5 1 and 5 2 are assumed to be the incident surface and the outgoing surface in the light quantity distribution correction optical system. In the light quantity distribution correction optical system, the beam width hO, hi of the light beam incident on the center portion close to the optical axis Z 1 and the light beam incident on the peripheral portion is set to be the same (hO 2 h 1 ). The light quantity distribution correction optical system amplifies the incident beam of the central portion with respect to the incident beam on the incident side with the same beam width hO, h 1 , and vice versa, and applies the beam width to the incident beam of the peripheral portion. The role of shrinking. That is, the width h 1 0 of the outgoing beam of the central portion and the width hll of the outgoing beam of the peripheral portion become hll <hlO. When expressed by the ratio of the beam width, the ratio of the beam width ratio [h 1 1 / h 1 0 ] of the peripheral portion to the incident side (h 1 / hO = 1 ) is lower than the ratio of the beam width at the center of the exit side. Become smaller (hi 1/hlO) < 1) ° By changing the beam width, the light beam at the center portion where the normal light amount distribution is increased can be generated in the peripheral portion where the amount of light is insufficient, and the entire surface is irradiated without reducing the light use efficiency. The light quantity distribution is slightly uniformized. The degree of homogenization is, for example, that the bright spot in the effective area is within 30%, preferably within 20%. The function and effect of the optical system for correcting the optical quantity distribution are also the same as when the entire beam width is changed on the incident side and the outgoing side (25th (B), 2 5 (C)). -36- 1263798 2 2 · < B shows a case where the total beam width HO on the incident side is reduced to a width H2 and emitted (HO > H2 ). In this case, the light quantity distribution correction optical system has light beams of the same beam width h0 and h1 on the incident side, and the beam width h 1 0 at the center side is larger than the peripheral portion on the emission side, and vice versa. The beam width h 1 1 of the portion becomes smaller than the center portion. When the reduction ratio of the light beam is taken into consideration, the reduction ratio of the incident light beam to the center portion is set to be smaller than that of the peripheral portion, and the reduction ratio of the incident light beam to the peripheral portion is set to be larger than the center portion. In this case, the ratio of the beam width of the peripheral portion to the beam width at the center portion "Η 1 1 / Η 1 0" is smaller than that at the incident side (h 1 / hO 2) ((h 1 1 / h 1 0 ) < 1). The 25th (C) diagram shows a case where the beam width HO of the entire incident side is enlarged to a width H3 and is emitted (HO) < H3). In this case, the light amount distribution correction optical system is set such that the light beam width h 1 0 at the center side and the light beam width h 1 0 at the center side are lower than those in the peripheral portion on the emission side. Large, on the other hand, the beam width hll of the peripheral portion becomes smaller than that at the center portion. Considering the magnification of the light beam, the amplification factor of the incident light beam to the center portion is set larger than that of the peripheral portion, and the magnification of the incident light beam to the peripheral portion is set to be smaller than that at the center portion. effect. In this case, the beam width ratio "hll/hlO" at the peripheral portion of the beam width at the center portion becomes smaller than that at the incident side (h 1 / hO = 1 ) ((h 1 1 / h) 1 0 ) < 1). In this manner, the light quantity distribution correction optical system changes the beam width at each of the emission positions because the ratio of the beam width of the peripheral portion to the beam width of the central portion close to the optical axis Z1 is set to be lower than that of the incident side. Since the emission side is small, the light having the same beam width on the incident side is larger on the emission side than the peripheral portion, and the beam width at the peripheral portion becomes larger than the center. The ministry is still small. Thereby, the light beam at the center portion can be generated in the peripheral portion, and the beam profile in which the light amount distribution is slightly uniform can be formed without reducing the light use efficiency of the entire optical system. Hereinafter, an example of specific lens data of a pair of combined lenses used as a light amount distribution correction optical system will be described. In this case, as in the case where the light source is a laser array light source, the lens data is shown when the light quantity distribution of the cross section of the outgoing light beam is Gaussian. Further, when one semiconductor laser is connected to the incident end of the single mode fiber, the light quantity distribution of the outgoing light beam from the optical fiber becomes a Gaussian distribution. This embodiment can also be applied to such a case. Further, by setting the core diameter of the multimode fiber to be close to the configuration of the single mode fiber or the like, the amount of light close to the central portion of the optical axis can be applied to a case where the amount of light is larger than that of the peripheral portion. Table 1 below shows the basic lens data. [Table 1] Basic lens data Si ri di Νι (face number) (radius of curvature) (area spacing) (refractive index) 01 Aspherical surface 5.000 1.52811 02 〇〇50.000 03 〇〇7.000 1.52811 04 Aspheric surface is known from Table 1, The pair of combined lenses consists of two aspherical lenses that are rotationally symmetric. The surface on the light incident side of the first lens disposed on the light incident side is referred to as a first surface, and the surface on the light exit side is referred to as a second surface, and the first surface has an aspherical shape of -38 to 1263798. In addition, the surface on the light incident side of the second lens on the light exit side is the third surface, and the light exit side is the fourth surface, and the fourth surface is aspherical. In Table 1, the surface number Si indicates the number of the i-th (i=l~4) plane, the curvature radius ri indicates the radius of curvature of the i-th surface, and the surface spacing di indicates the light of the i-th surface and the first-th surface. The area spacing on the shaft. The unit of the surface spacing d i値 is mm (1 mm). The refractive index Ni represents 値 with respect to the refractive index of the wavelength of 40 5 nm of the optical element having the second surface. The following Table 2 shows the aspherical data of the first surface and the fourth surface. [Table 2] Aspherical data, first surface, fourth surface, C-1, 4098E- 02, 9. 8 5 06Ε— 03 K, 4 · 2192E, 10, 00, 3, 6 2, 5, 3, +1, 3, 1, 0, 0, 0 — 04 — 8 · 9980Ε- 05 a 4 3.0591E — 05 2 · 3060Ε— 05 a 5 —4.5115E— 07 A 2·2860Ε— 06 a 6 -8 . 2819E- 09 S . 766 1 Ε- 08 a7 4 . 1 020E - 12 4 · 4028Ε- 10 a8 1.223 1 - 1 3 1 · 3624Ε- 12 a9 5·3753E- 16 3 . 3 9 6 5 Ε - 1 5 a 1 0 1 · 6315Ε— 18 7 . 4823Ε- 18 The aspherical data is represented by a coefficient in the formula (A) representing the aspherical shape. -39- 1263798 [Expression 1]

C u 小-k(c .Py- 10 :+Σα/·C u small -k(c .Py- 10 :+Σα/·

上述式(A)中之各係數係定義如下。 Z :由位在距離光軸高度P之位置的非球面上之點降至非球面 之頂點的接平面(垂直於光軸的平面)之垂線的長度(mm ) P :距離光軸之距離(mm) K :圓錐係數 C:近軸曲率(1/r、r:近軸曲率半徑) a i :第i次(i = 3〜1 0 )之非球面係數 在表2所示的數値中,記號”E”係表示接在其後之數値爲應 以1 0爲底的指數,其以1 0爲底之指數函數所表示的數値係 表示被乘於”E”之前的數値。例如,以「1 .〇E — 02」爲例,係 表示「1 .OxlO·2」。 第27圖係表示藉由上述表1及表2所示之成對的組合透 鏡可得之照明光的光量分布。橫軸係表示距離光軸之座標, 軸表示光量比(% )。此外,爲了作比較,係以第2 6圖表示 未執行補正時之照明光的光量分布(高斯分布)。由第2 6圖 及第2 7圖可知,藉由以光量分布補正光學系統執行補正, 與不執行補正的場合相較下,係可獲得被略均一化之光景分 布。藉此,在曝光頭中之光利用效率不降低之下,可以均一的 雷射光執行無斑的曝光。此外,也可使用一般常用之杆式積 分儀或複眼透鏡等。 〔其他的成像光學系統〕 -40 - 1263798 上述的實施形態中,雖然在曝光頭所使用之DMD的光反 射側設置了作爲成像光學系統之2組透鏡,但也可配置將雷 射光放大而成像之成像光學系統。藉由放大由DMD所反射之 光束線的斷面積,可將在被曝光面中之曝光區域面積(畫像 區域)放大成所期望之大小。 例如,曝光頭可由如第31( A)圖所示構成··對DMD5 0,DMD5 0 照射雷射光之照明裝置144;把在DMD50反射之雷射光予以 放大而成像之透鏡系454,45 8;對應DMD50之各畫素而配置 有多數微透鏡474之微透鏡陣列472;對應微透鏡陣列472 之各微透鏡而配置有多數光圈478之光圏陣列476;以及使 通過光圏之雷射光成像於被曝光面56之透鏡系480,482。 以此曝光頭而言,由照明裝置144照射雷射光時,由DMD50 在開啓方向所反射之光束線的斷面積係經由透鏡系454、458 而被放大數倍(例如,2倍)。被放大的雷射光係由微透鏡陣 列472的各微透鏡而對應DMD50之各畫素被集光,通過光圈 陣列4 7 6之對應的光圈。通過光圈之雷射光係經由透鏡系 480、482而成像於被曝光面56上。 在此成像光學系統中,由DMD50所反射之雷射光係經由放 大透鏡454、458被放大數倍而投影至被曝光面56,所以全 體的畫像區域變廣。此時,若未配置有微透鏡陣列472及光 圈陣列4 7 6,則如第3 1 ( B )圖所示,投影至被曝光面5 6之各 光束光點BS之1畫素尺寸(光點尺寸)係因應曝光區域468 的尺寸而成爲大者,表示曝光區域468之鮮銳度的MTF(光學 傳遞函數)特性會降低。 -41- 1263798 一方面,在配置有微透鏡陣列47 2及光圏陣列4 7 6之場合, 由DMD50所反射之雷射光係依微透鏡陣列472的各微透鏡, 對應DMD 5 0之各畫素而被集光。藉此,如第31 (C)圖所示, 即使是在曝光區域被放大的場合,也可把各光束光點B S的光 點尺寸縮小成所期望之大小(例如,1 〇 V m X 1 〇 V m ),可防止 MTF特性之降低以執行高精細的曝光。此外,曝光區域468 之所以傾斜係,爲了使畫素間沒有間隙而將DMD5 0傾斜地配 置所致。 又,即使依微透鏡之像差的光束爲寬,也可利用光圈使被曝 光面56上之光點尺寸成爲一定大小般地將光束整形,同時藉 由使其通過對應各畫素所設置的光圈,可防止在鄰接之畫素 間的串音。 更者,藉由在照明裝置144上使用與上述實施形態同 樣的高亮度光源,因爲由透鏡458入射至微透鏡陣列472的 各微透鏡之光束角度變小,所以可防止鄰接的畫素之光束的 一部分之入射。亦即,可實現高消光比。 【發明之效果】 本發明之光成型裝置係可獲得能執行高速成型之效果。 又、在光源上使用高輝度光源之場合,可獲得能執行高精密 成型之效果。 【圖式簡單說明】 第1圖係表示在第1實施形態之光成型裝置的外觀斜視圖。 第2圖係表示在第1實施形態之光成型裝置的掃描器之構 成斜視圖。 -42- 1263798 第3 ( A )圖係表示形成在液面之已曝光的區域之平面圖,第 3 ( B)圖係表示各曝光頭的曝光區域之配列圖。 第4圖係表示在第1實施形態之光成型裝置的曝光頭之槪 略構成斜視圖。 第5 ( A )圖係沿著第4圖所示之曝光頭之構成的光軸之副 掃描方向的斷面圖,第5 ( B )圖係表示第5 ( A )圖所示之側面 圖。 第6圖係表示數位微鏡裝置(DMD )的構成之部分放大圖。 第7(A)及7(B)圖係用以說明DMD的動作之說明圖。 第8 ( A )、8 ( B )圖係表示DMD不傾斜配置時及作傾斜配置 時曝光束的配置及掃描線作比較之平面圖,第8 ( B )圖係表示 DMD曝光束的配置及掃描線之平面圖。 第9 ( A )圖係表示光纖陣列光源的構成之斜視圖,第9 ( B )圖 係第9(A)圖之部分放大圖,第9(C)、9(D)圖係表示在雷射出 射部中之發光點的配列平面圖。 第10圖係表示多模光纖的構成圖。 第1 1圖係表示合波雷射光源的構成之平面圖。 第1 2圖係表示雷射模組的構成之平面圖。 第1 3圖係表示第1 2圖所示之雷射模組的構成之側面圖。 第1 4圖係表示第1 2圖所示之雷射模組的構成之部分側面 圖。 第1 5 ( A )、1 5 ( B )圖係表示沿著以往的曝光裝置中之焦點 深度的光軸與第1實施形態之光成型裝置中之焦點深度的 差異光軸之斷面圖。 - 4 3 - 1263798 第1 6 ( A )、1 6 ( B )圖係表示D M D之使用區域的1例圖。 第17(A)圖係DMD之使用區域爲適合之場合的側面圖,第 1 7 ( B )圖係沿著第1 7 ( A )圖之光軸的副掃描方向之斷面圖。 第1 8圖係用以說明以掃描器的1次掃描來使光硬化性樹 脂之液面全面曝光之曝光方式的平面圖。 第1 9 ( A )及1 9 ( B )圖係用以說明以掃描器的複數次掃描來 使光硬化性樹脂之液面全面曝光之曝光方式的平面圖。 第20圖係表示雷射陣列的構成之斜視圖。 第2 1 ( A )圖係表示多腔雷射的構成之斜視圖,第2 1 ( B )圖係 將第2 1 ( A )圖所示之多腔雷射予以陣列配列的多腔雷射陣列 之斜視圖。 第22圖係表示合波雷射光源之其他構成的平面圖。 第23圖係表示合波雷射光源之其他構成的平面圖。 第24(A)圖係表示合波雷射光源之其他構成之平面圖,第 2 4B圖係沿著第24(A)圖之光軸的斷面圖。 第25(A)、(B)、(C)圖係由光量分布補正光學系統的補正 之槪念說明圖。 第26圖係表示光源爲高斯分布且不執行光量分布補正時 之光量分布圖表。 第27圖係表示由光量分布補正光學系統補正後之光量分 布圖表。 第28圖係以往的雷射掃描方式之積層成型裝置的構成之 斜視。 第2 9圖係表示以往的可動鏡方式之積層成型裝置的構成 -44- 1263798 之斜視圖。 第30(A)圖係表示曝光區域之曝光圖案的1例之平面圖, 第30(B)圖係表示將第30(A)圖之第1群的畫素曝光後之狀 態的斜視圖,第3 0 ( C )圖係表示將第3 0 ( A )圖之第2群的畫素 曝光後之狀態的斜視圖。 第3 1 ( A )圖係表示沿著結合光學系統之其他不同的曝光頭 的構成之光軸的斷面圖,第30(B)圖係表示在不使用微透鏡 陣列等之場合時、投影至被曝光面之光像的平面圖。第3 0 ( C ) 圖係表示在使用有微透鏡陣列等之場合時、投影至被曝光面 之光像的平面圖。 【主要元件符號說明】 10 · · · ••熱塊 1 1 〜17 · • •准直透鏡 20 · · · ••集光透鏡 30 · · · ••多模光纖 50 · · · ••數位微鏡裝置(DMD) 53 · —— ••曝光束 54 、 58 、 ••透鏡系 5 6· · · • •掃描面(被曝光面) 64 · · · ••雷射模組 66 · · · • •光纖陣列光源 68—— · • •雷射出射部 73 · · · • •組合透鏡 150 ·· · _ ••感光材料 - 45- 1263798 152· ·. • ••載物台 156· · • · ·設置台 158.。. ,導引部 162 ·.. * •掃描器 166· ·. • ••曝光頭 168· ·. > · ·曝光區域 170· · _ > · •已曝光區The coefficients in the above formula (A) are defined as follows. Z: the length (mm) of the perpendicular line from the point on the aspheric surface located at a position from the height P of the optical axis to the plane of the aspherical surface (the plane perpendicular to the optical axis) P: the distance from the optical axis ( Mm) K: conic coefficient C: paraxial curvature (1/r, r: paraxial radius of curvature) ai : the aspheric coefficient of the i-th (i = 3 to 1 0) is in the number shown in Table 2, The symbol "E" indicates that the number following it is an index which should be based on 10, and the number represented by the exponential function of 10 is the number 値 before the "E". For example, taking "1.〇E-02" as an example, it means "1.OxlO·2". Fig. 27 is a view showing the light amount distribution of the illumination light which can be obtained by the paired combined lenses shown in Tables 1 and 2 above. The horizontal axis represents the coordinate from the optical axis, and the axis represents the light amount ratio (%). Further, for comparison, the light amount distribution (Gaussian distribution) of the illumination light when the correction is not performed is shown in Fig. 26. As can be seen from Fig. 26 and Fig. 27, the correction is performed by the light quantity distribution correction optical system, and the slightly uniformized scene distribution can be obtained as compared with the case where the correction is not performed. Thereby, the spot-free exposure can be performed with uniform laser light without lowering the light utilization efficiency in the exposure head. In addition, a commonly used rod integrator or fly-eye lens can also be used. [Other imaging optical system] -40 - 1263798 In the above embodiment, although two sets of lenses as the imaging optical system are provided on the light reflection side of the DMD used for the exposure head, the laser light may be enlarged and imaged. Imaging optical system. The area of the exposed area (the image area) in the exposed surface can be enlarged to a desired size by enlarging the sectional area of the beam line reflected by the DMD. For example, the exposure head can be constructed as shown in Fig. 31(A), illuminating device 144 for irradiating laser light to DMD50, DMD50, and lens system 454, 458 for magnifying laser light reflected by DMD50; a microlens array 472 having a plurality of microlenses 474 disposed corresponding to respective pixels of the DMD 50; a pupil array 476 having a plurality of apertures 478 disposed corresponding to the respective microlenses of the microlens array 472; and imaging laser light passing through the pupil The lens of the exposed surface 56 is 480, 482. With this exposure head, when the laser beam is irradiated by the illumination device 144, the area of the beam line reflected by the DMD 50 in the opening direction is amplified several times (for example, twice) via the lens systems 454 and 458. The amplified laser light is collected by the respective microlenses of the microlens array 472 corresponding to the respective pixels of the DMD 50, and passes through the corresponding apertures of the aperture array 476. The laser light passing through the aperture is imaged on the exposed surface 56 via the lens systems 480, 482. In this imaging optical system, the laser light reflected by the DMD 50 is magnified several times by the magnification lenses 454 and 458 and projected onto the exposure surface 56, so that the entire image area is widened. At this time, if the microlens array 472 and the aperture array 476 are not disposed, as shown in the third figure (1), the pixel size of each of the beam spots BS projected onto the exposed surface 56 is light. The dot size is larger depending on the size of the exposed region 468, and the MTF (optical transfer function) characteristic indicating the sharpness of the exposed region 468 is lowered. -41- 1263798 On the one hand, in the case where the microlens array 47 2 and the pupil array 476 are disposed, the laser light reflected by the DMD 50 is based on each microlens of the microlens array 472, corresponding to each of the DMDs 50 It is collected by light. Thereby, as shown in Fig. 31(C), even when the exposure area is enlarged, the spot size of each beam spot BS can be reduced to a desired size (for example, 1 〇V m X 1 〇V m ), which prevents the degradation of the MTF characteristics to perform high-definition exposure. Further, the exposure region 468 is inclined so that the DMD 50 is obliquely arranged in order to prevent a gap between the pixels. Further, even if the beam of the aberration of the microlens is wide, the beam can be shaped by the aperture so that the size of the spot on the exposed surface 56 becomes a certain size, and at the same time, by passing it corresponding to each pixel. Aperture prevents crosstalk between adjacent pixels. Further, by using the high-intensity light source similar to that of the above-described embodiment in the illumination device 144, since the beam angle of each microlens incident on the microlens array 472 by the lens 458 becomes small, the adjacent pixel beam can be prevented. Part of the incident. That is, a high extinction ratio can be achieved. [Effects of the Invention] The optical molding apparatus of the present invention can obtain an effect of being able to perform high-speed molding. Further, in the case where a high-intensity light source is used for the light source, an effect of performing high-precision molding can be obtained. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing the appearance of a light molding apparatus according to a first embodiment. Fig. 2 is a perspective view showing the structure of a scanner of the optical molding apparatus of the first embodiment. -42- 1263798 The third (A) diagram shows a plan view of the exposed area formed on the liquid surface, and the third (B) diagram shows the arrangement of the exposure areas of the respective exposure heads. Fig. 4 is a perspective view showing a schematic configuration of an exposure head of the optical molding apparatus according to the first embodiment. Figure 5 (A) is a cross-sectional view in the sub-scanning direction of the optical axis of the exposure head shown in Figure 4, and Figure 5 (B) shows the side view shown in Figure 5 (A) . Fig. 6 is a partially enlarged view showing the configuration of a digital micromirror device (DMD). Figures 7(A) and 7(B) are diagrams for explaining the operation of the DMD. The 8th (A) and 8(B) diagrams show the arrangement of the exposure beam and the comparison of the scan lines when the DMD is not tilted and when it is tilted. The 8th (B) diagram shows the configuration and scanning of the DMD exposure beam. Plan of the line. The 9th (A) diagram shows a perspective view of the configuration of the fiber array light source, the 9th (B) diagram is a partial enlarged view of the 9th (A) diagram, and the 9th (C) and 9th (D) diagrams are shown in the A plan view of the arrangement of the light-emitting points in the exit portion. Fig. 10 is a view showing the configuration of a multimode optical fiber. Fig. 1 is a plan view showing the configuration of a multiplexed laser light source. Fig. 12 is a plan view showing the configuration of the laser module. Fig. 13 is a side view showing the configuration of the laser module shown in Fig. 2. Fig. 14 is a partial side view showing the configuration of the laser module shown in Fig. 12. The first and fifth aspects (5) and (5) show a cross-sectional view of the optical axis of the focal depth in the conventional exposure apparatus and the optical axis of the focal length in the optical molding apparatus according to the first embodiment. - 4 3 - 1263798 The first 16 (A) and 16 (B) diagrams show an example of the use area of D M D . Fig. 17(A) is a side view showing a region where the DMD is used, and the 17th (7) diagram is a cross-sectional view in the sub-scanning direction along the optical axis of the 1st (7th) diagram. Fig. 18 is a plan view showing an exposure mode in which the liquid level of the photocurable resin is fully exposed by one scan of the scanner. The 19th (9) and 19(B) drawings are plan views for explaining an exposure mode in which the liquid level of the photocurable resin is fully exposed by a plurality of scans of the scanner. Figure 20 is a perspective view showing the configuration of a laser array. The 2 1 (A) diagram shows a perspective view of the configuration of the multi-cavity laser, and the 2 1 (B) diagram is a multi-chamber laser array in which the multi-cavity lasers shown in the 2 1 (A) diagram are arrayed. An oblique view of the array. Fig. 22 is a plan view showing another configuration of the combined laser light source. Figure 23 is a plan view showing another configuration of the combined laser light source. Fig. 24(A) is a plan view showing another configuration of the multiplexed laser light source, and Fig. 24B is a sectional view taken along the optical axis of Fig. 24(A). The 25th (A), (B), and (C) diagrams are explanatory diagrams of the correction of the optical quantity distribution correction optical system. Fig. 26 is a graph showing the light amount distribution when the light source is Gaussian and the light amount distribution is not corrected. Fig. 27 is a graph showing the distribution of the amount of light corrected by the light quantity distribution correction optical system. Fig. 28 is a perspective view showing the configuration of a conventional layer forming apparatus for a laser scanning method. Fig. 29 is a perspective view showing a configuration of a conventional movable mirror type laminated molding apparatus -44-1263798. Fig. 30(A) is a plan view showing an example of an exposure pattern in an exposure region, and Fig. 30(B) is a perspective view showing a state in which a pixel of a first group in the 30th (A) is exposed, The 3 0 (C) diagram is a perspective view showing a state in which the pixels of the second group of the 3 0 (A) map are exposed. The 3rd (A) diagram shows a cross-sectional view of the optical axis along the configuration of other different exposure heads that are combined with the optical system, and the 30th (B) diagram shows the projection when the microlens array or the like is not used. A plan view of the light image to the exposed surface. The 30th (C) diagram shows a plan view of a light image projected onto the surface to be exposed when a microlens array or the like is used. [Main component symbol description] 10 · · · •• Thermal block 1 1 ~17 · • • Collimating lens 20 · · · •• Collecting lens 30 · · · • Multimode fiber 50 · · · •• Digital micro Mirror device (DMD) 53 · —— •• Exposure beam 54 , 58 , •• Lens system 5 6 · · · • • Scanning surface (exposure surface) 64 · · · •• Laser module 66 · · · • • Fiber array light source 68 – • • • Laser exit section 73 · · · • • Combination lens 150 ·· · _ • Photosensitive material - 45- 1263798 152 · ·· • •• Stage 156· · • · Set up the station 158. . Guide 162 ·.. * • Scanner 166· ·. • ••Exposure head 168· ·. > · Exposure area 170· · _ > · • Exposure area

-46--46-

TW93136882A 2002-05-23 2003-05-09 Optical shaping device TWI263798B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002149885A JP2003340923A (en) 2002-05-23 2002-05-23 Optical-forming apparatus
JP2002149886A JP4731787B2 (en) 2002-04-10 2002-05-23 Exposure head and exposure apparatus
JP2002149884A JP2003340924A (en) 2002-05-23 2002-05-23 Laminate forming apparatus
JP2002199091A JP2004042143A (en) 2002-07-08 2002-07-08 Method for forming micro flow passage
JP2002199092A JP2004043981A (en) 2002-07-08 2002-07-08 Apparatus for bleaching treatment

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TW200528754A TW200528754A (en) 2005-09-01
TWI263798B true TWI263798B (en) 2006-10-11

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TW92112637A TWI258601B (en) 2002-05-23 2003-05-09 Exposure head and exposure device
TW93136885A TWI263810B (en) 2002-05-23 2003-05-09 Bleaching treatment device
TW93136884A TWI268854B (en) 2002-05-23 2003-05-09 Laminated shaping device
TW93136883A TWI274733B (en) 2002-05-23 2003-05-09 Forming method for tiny flow paths
TW93136882A TWI263798B (en) 2002-05-23 2003-05-09 Optical shaping device

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TW92112637A TWI258601B (en) 2002-05-23 2003-05-09 Exposure head and exposure device
TW93136885A TWI263810B (en) 2002-05-23 2003-05-09 Bleaching treatment device
TW93136884A TWI268854B (en) 2002-05-23 2003-05-09 Laminated shaping device
TW93136883A TWI274733B (en) 2002-05-23 2003-05-09 Forming method for tiny flow paths

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TWI825023B (en) 2017-08-24 2023-12-11 日商索尼股份有限公司 Light modeling device, lighting control method and lighting control program

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TW200528754A (en) 2005-09-01
TWI268854B (en) 2006-12-21
TW200517334A (en) 2005-06-01
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TW200517244A (en) 2005-06-01
TWI274733B (en) 2007-03-01

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