200528754 九、發明說明： 【發明所屬之技術領域】 本發明係有關光成型裝置，特別是有關因應畫像資料以由 空間光調變元件所調變的光束將光硬化性樹脂曝光而成型3 維模型之光成型裝置。 【先前技術】 近年來伴隨著3維CAD (電腦輔助設計）系統的普及，係 利用光成型系統，其依據由3維CAD作成在電腦上的假想空 間之3維形狀，再依CAD資料以光束將光硬化性樹脂曝光而 成型3維模型之。在此光成型系統中，在電腦上將CAD資料 以指定間隔切割再作成複數個斷面資料，依據各斷面資料以 雷射光掃描液狀的光硬化性樹脂之表面使硬化成層狀，再將 樹脂硬化層依序積層以成型3維模型。以光成型方法而言， 係事前在上方開放型的糟內貯留液狀的光硬化性樹脂，再使 配置在接近光硬化性樹脂的液面之成型台，依序由樹脂的自 由液面沈下再將樹脂硬化層積層之自由液面法係廣範地爲人 所知悉。 以往，在此光成型系統所使用的光成型裝置係具有如「九 谷洋二：光成型系統之基礎、現狀、問題點、模型技術、第 7卷第10號，PP18-23，1 992」所示之依雷射繪圖器方式來 執行掃描及依可動鏡方式來執行掃描者。 茲以第 28圖來表示雷射繪圖器方式的光成型裝置。此裝 置中，由雷射光源2 50所振盪之雷射光係通過具備有遮板25 2 的光纖25 4而到達XY繪圖器2 5 6,再由XY繪圖器2 5 6照射 200528754 到容器260內的光硬化性樹脂262之液面266。又，藉由具 備有X定位機構258a和Y定位機構258b之XY定位機構258 以控制XY繪圖器2 5 6的X方向，Y方向的位置。因此藉由使 XY繪圖器256 —邊移動於X方向，Y方向，一邊藉由遮板252 因應斷面資料把由XY繪圖器2 5 6所照射的雷射光作開啓、 關閉控制，係可硬化液面2 6 6之指定部分的光硬化性樹脂 262 ° 然而，在依雷射繪圖器方式的光成型裝置中，在遮板速度或 繪圖器之移動速度上係有限度，具有成型上需要長時間之問 題。 接著，以第 29圖來表示以往依使用有電流計鏡的可動鏡 方式之光成型裝置。在此裝置中，雷射光2 70係被X軸旋轉 鏡27 2、Y軸旋轉鏡274所反射而被照射在光硬化性樹脂 2 62。X軸旋轉鏡2 72係以Z軸爲旋轉軸旋轉以控制照射位 置之X方向的位置，Y軸旋轉鏡274係以X軸爲旋轉軸而旋 轉，以控制照射位置之Y方向的位置。在此可動鏡方式中，相 較於雷射繪圖器方式，係可提升掃描速度。 然而，在依可動鏡方式的光成型裝置中，由於係以微小的雷 射光點作掃描，所以即使執行例如2〜1 2m/ s的高速掃 描，10cm立方程度的3維模型在成型上需要8〜24小時的時 間，在成型上係需要長時間。又，雷射光270係僅於Y軸旋轉 鏡2 74在指定範圍的角度入射時被反射，所以照射區域被限 定於是，爲了放大照射區域，當將Y軸旋轉鏡2 74配置在偏離 光硬化性樹脂2 6 2之高的位置時，係具有雷射光點的直徑變 200528754 大使定位精度變差且成型精度降低的問題。又，在使γ軸旋 轉鏡2 7 4之旋轉角度加大時，照射範圍雖然會放大，但是同樣 地定位精度變差，正畸變（pincushionerror)會增加。再者， 於使用有電流計鏡的光成型裝置上也具有應變補正或光軸調 整等之光學系統的調整複雜且光學系統複雜、裝置全體大型 化之問題。 此外，在依任何方式的光成型裝置，以雷射光源來說係使用 高輸出之紫外線雷射光源，以往一般爲依氬氣雷射等氣體雷 射或依HG (第3高諧波）的固體雷射，氣體雷射係在管之交 換等的維修麻煩，再加上高價且光成型裝置的價格提高，必需 冷卻用冷卻器等之附帶設備所以裝置整體係大型化。於THG 固體雷射中，在於Q開關的脈波動作係反複速度慢，不適用在 高速曝光。又，因使用THG光使波長變換效率變差而不能高 輸出化，再加上作爲激勵半導體雷射者必需使用高輸出，所以 成爲非常高成本者。 有鑑於此問題，在日本專利特開平1 1 — 1 3 8 6 4 5號公報中係 揭示一種光成型裝置，其具備有複數個能以較單一之畫素還 大的尺寸的光點來照射曝光區域的光源，依複數個光源將畫 素多重曝光。此裝置中，依複數個光源將畫素多重曝光，所以 即使各個光源之輸出爲小，也可將平價的發光二極體（LED ) 作爲光源來使用。 然而，在日本專利特開平1 1 - 1 3 864 5號公報所記載之光成 型裝置中，各光源之光點尺寸係各單一的畫素還大，所以在高 精細的成型上不能使用，且依複數個光源將畫素作多重曝光， 一 8 - 200528754 所以在動作上浪費甚多，也具有成型上需要長時間之問題。 另外，因爲光源數增加，也具有所謂之曝光部大型化的問題。 再者，即使以LED的輸出光量作多重曝光也具有不能獲得充 分的分辨率之虞。 本發明係有鑑於上述先前技術的問題點而成者，本發明之 目的爲提供一可高速成型的光成型裝置。又，本發明之其他 目的係提供一可高精細成型的光成型裝置。 【發明内容】 【解決課題之手段】 爲達成上述目的，本發明之光成型裝置之特徵爲具備有： 成型槽，收容光硬化性樹脂；支持台，用以支持在該成型槽 內以可昇降地設置的成型物；曝光頭，包含有：雷射裝置， 照射雷射光；空間光調變元件，在基板上以2維狀配列有對 應各自控制信號可變化光調變狀態之多數個畫素部，用以調 變由該雷射裝置所照射之雷射光；控制手段，利用對應曝光 資訊所生成之控制信號，控制比配列在該基板上之畫素部的 全部個數還少個數之複數個畫素部；光學系統，把在各畫素 部調變之雷射光成像於被收容在該成型槽之光硬化性樹脂的 液面；及移動手段，使該曝光頭對該光硬化性樹脂之液面作 相對移動。 在本發明之光成型裝置中，藉由把在曝光頭之空間光調 變元件之各畫素部調變的雷射光成像於被收容在該成型糟之 光硬化性樹脂的液面，同時利用移動手段把該曝光頭對該光 硬化性樹脂之液面作相對移動，以將收納在成型槽的光硬化 -9- 200528754 性樹脂的液面掃描曝光。被曝光之樹脂係硬化產生硬化樹脂 層。將硬化樹脂層形成1層之後，使用來支持成型物之設置 在成型槽內的支持台下降而形成新的樹脂表面，同樣地形成 次一硬化樹脂層。如此一來，反覆樹脂的硬化和降下支持台 使硬化樹脂層依序積層以成型3維模型。 本發明之光成型裝置中，有關曝光頭之空間光調變元件，係 依因應曝光資訊所生成之控制信號，以控制比配列在其基板 上之畫素部的全部個數還少個數之複數個畫素部各自。亦即， 並非控制配列在基板上之畫素部全部，而係控制一部分的畫 素部。因此，要控制之畫素部的個數變少，控制信號的轉送速 度係變得比轉送全部的畫素部之控制信號時還短。依此可加 快調變速度而成爲可高速成型。 在上述之光成型裝置中，由該控制手段所控制的畫素部係， 對應指定方向之方向的長度爲比與該指定方向交叉的方向之 長度還長的區域所包含的畫素部係較佳。藉由使用在雷射裝 置之發光點配列方向之長區域的畫素部，可減少要使用之曝 光頭數。 又，在上述之光成型裝置中，該雷射裝置係可構成爲具備 有把由光纖的入射端入射之雷射光由其出射端出射之複數光 纖光源，且該複數光纖光源之出射端中的發光點各自以1維 或2維陣列狀配列成光纖陣列光源。又，以在該複數個光纖 光源之出射端中之發光點各自作束狀配列的光纖束光源來構 成也可以。藉由陣列化或束化而可圖謀高輸出化。以該光纖 而言，較佳爲使用核心直徑爲均一且出射端的包層直徑係較 - 1 0- 200528754 入射端的包層直徑還小的光纖。 以構成光纖陣列光源等之各光纖光源而言，將雷射光合波 而入射至光纖的合波雷射光源較佳。藉由合波雷射光源，可 獲得高亮度，高輸出。又，因用以獲得相同光輸出之陣列化的 光纖條數不需多就可解決，所以成本低。再者，因爲光纖之條 數少，所以在陣列化之際的發光區域係變更小（高亮度化）。 由於使用前述之包層直徑小的光纖，所以陣列化之際的發光 區域係變更小而可高亮度化。即使在部分地使用空間光調變 元件之場合，藉由使用高亮度的光纖陣列光源或光纖束光 源，可對使用部分有效率地照射雷射光，特別是對空間調變元 件之照明NA係可變小，可把通過空間調變元件後之成像光束 的焦點深度取深，可以高光密度照射雷射光。依此，高速且高 精細的曝光、成型係成爲可能。例如，1 V m等級之微細形狀 的成型也可能。 例如，光纖光源可以如下所構成：複數半導體雷射；複數半 導體雷射；1條光纖；以及集光光學系統，把由該複數半導體 雷射之各自出射的雷射光束予以集光，且使集光束結合至該 光纖入射端。又，光纖光源也可由如下所構成：具備複數發光 點之多腔雷射；1條光纖；以及集光光學系統，把由該複數發 光點之各自出射的雷射光束予以集光，且使集光束結合至該 光纖入射端。再者，把由複數之多腔雷射的發光點之各自 出射的雷射光束予以集光再結合至1條光纖也可以。 以上述光成型裝置所使用的空間調變元件而言，可以使用 在基板上以2維狀配列有因應各個控制信號可變更反射面角 -11- 200528754 度之多數個微鏡所構成之數位微鏡裝置（DMD )、或在基板上 以2維狀配列有因應各個控制信號可遮斷透過光之多數個液 晶胞所構成之液晶遮板陣列。如同DMD、藉由使用具備多數 個畫素部之空間光調變元件、在多數的通道曝光，以防止功 率分散、熱應變。 以使用在上述的光成型裝置之雷射裝置而言，照射波長 3 50〜4 50nm之雷射光係較佳。例如，藉由在半導體雷射使 用GaN系半導體雷射，可構成照射波長3 50〜450nm的雷射光 之雷射裝置。藉由使用波長3 50〜4 50nm的雷射光，與使用紅 外線波長區域的雷射光之場合相較下，係可使光硬化性樹脂 的光吸收率大幅地增加。波長3 50〜450nm的雷射光係短波 長，所以光子能量大，變換爲熱能係容易。如此一來，波長350 〜450nm之雷射光係光吸收率大，變換爲熱能係容易，所以光 硬化性樹脂的硬化，亦即可高速地進行成型。雷射光之波 長帶域係3 50〜420nm爲佳。以利用低成本的GaN系半導體 雷射這點而言，波長405nm係特別好。 此外，上述的光成型裝置係可構成爲具備複數個曝光頭之 多頭式光成型裝置。藉由多頭式化更可謀求成型的高速化。 【實施方式】 〔光成型裝置之構成〕 有關本發明之實施形態的光成型裝置係如第1圖所示，具 有在上方開口的容器156,在容器156內係收容有液狀的光 硬化性樹脂150。又，在容器156內配置有平板狀之昇降載 物台152,此昇降載物台152係由配置在容器156外之支持 - 12- 200528754 部1 5 4所支持著。支持部1 5 4係設置有公螺旋部1 5 4 A ,此公 螺旋部1 5 4 A係與依未圖示的驅動馬達而可旋轉之導螺桿1 5 5 螺合。伴隨著此導螺桿1 5 5的旋轉，昇降載物台1 5 2係被昇 降。 在容器1 5 6內所收容之光硬化性樹脂1 5 2的液面上方，箱 狀的掃描器162係配置成使其長度方向朝容器156的寬度方 向。掃描器162係由安裝在寬度方向的兩側面之2根支持臂 160所支持。此外，掃描器162係連接在未圖示之用以控制 其之控制器。 又，在容器1 5 6之長度方向的兩側面，係各自設置有在副掃 描方向延伸的導引部158。2根支持臂160的下端部係在此 導引部1 5 8，以沿著副掃描方向可往復移動地安裝著。此外， 在此光成型裝置係設置有未圖示之用以將支持臂160連同掃 描器162 —起沿著導引部158驅動之驅動裝置。 掃描器1 62係如第2圖所示，（例如，3行5列）具備有呈 略矩陣狀配列之複數個（例如1 4個）曝光頭1 6 6。在此例 中，因爲與容器丨56之寬度方向寬度之關係，在第3行係配置 了 4個曝光頭166。此外，在表示配置在第m行之第η列的 各個曝光頭時，係表示成曝光頭16 6mn。 依曝光頭166的曝光區域168係以副掃描方向爲短邊的矩 形狀。因此，伴隨著掃描器1 62之移動，在光硬化性樹脂1 52 的液面係形成各曝光頭166帶狀的已曝光區域（硬化區域） 1 70。此外，在要表示依配列在第m行之第n列之各個曝光頭 所形成之曝光區域時，係表示爲曝光區域168 mn。 200528754 又，如第3(A)圖及3(B)圖所示，帶狀之已曝光區域ι7〇 係無間隙地在與副掃描方向正交的方向排列，線狀配列之各 行的曝光頭各自係在配列方向以指定間隔（曝光區域之長邊 的自然數倍，本實施形態中爲2倍）偏移而配置著。因此，在 第1行的曝光區域1 6 8 i i和曝光區域1 6 8 i 2之間之不能曝光 的部分係可依第2行之曝光區域1 6 8 2 i和第3行的曝光區域 1 6 831而曝光。 曝光頭166^-166^係各自如第4,5 (A)及5(B)圖 所示，具備數位微鏡裝置（DMD ) 5 0以作爲因應畫像資料把 入射光束因應畫像資料而對各畫素作調變之空間光調變元 件。此DMD50係連接在未圖示之具有資料處理部和鏡驅動控 制部之控制器上。此控制器之資料處理部係依據輸入的畫像 資料，生成用以對各曝光頭166之DMD50之應控制區域內 的各微鏡驅動控制之控制信號。此外有關要控制的區域係在 後面加以敘述。 在DMD50的光入射側係以如下之順序配置即：備有光纖的 出射端部（發光點）沿著與曝光區域168之長邊方向對應之 方向成一列配列的雷射出射部之光纖陣列光源6 6 ;把由光纖 陣列光源66所出射之雷射光作補正且使集光於DMD上之透 鏡系67;以及將透射透鏡系67的雷射光朝DMD50反射之鏡 6 9 ° 透鏡系67,係由使光纖陣列光源66所出射的雷射光平行 光化之1對組合透鏡7 1、使被平行光化的雷射光之光量分 布成爲均一般而加以補正之1對組合透鏡7 3、以及把光量 一 1 4 - 200528754 分布被補正的雷射光集光於DMD上之集光透鏡75所構成。 組合透鏡7 3係具備有，對雷射出射端之配列方向，接近透鏡 的光軸之部分爲擴大光束且離開光軸的部分係光束縮減，且 在與此配列方向正交的方向使光照其原樣通過之機能，使光 量分布成爲均一般地補正雷射光。 又，在DMD50的光反射側配置有使在DMD50反射的雷射光 成像於感光材料150的掃描面（被曝光面）56上之透鏡系54、 58。透鏡系54及58係配置成使DMD50和被曝光面56成爲 共軛的關係。 DMD50係如第6圖所示，在SRAM胞（記憶體胞）60上，微 小鏡（微鏡）62係由支柱所支持而配置者，係使構成畫素 (PIXEL)之多數個（例如，600個X 800個）微小鏡以格子 狀配列所構成之鏡裝置。各畫·素之最上部係設置有由支柱所 支持的微鏡62,微鏡62的表面係蒸鍍有鋁等之反射率高的 材料。此外，微鏡62的反射率係90%以上。且在微鏡62的 正下係透過包含有鉸鏈及軛架的支柱配置有在通常的半導體 記憶體之生產線所製造之矽閘門的CMOS之SRAM胞60,全體 係構成爲整塊（一體型）。 當DMD50的SRAM胞60被寫入數位信號時，則由支柱所支 撐的微鏡62係以對角線爲中心，被以相對於配置有DMD50的 基板側，以α度（例如± 1 〇度）的範圍傾斜。第7 ( A )圖係 表示微鏡62在開啓狀態之傾斜在+ α度的狀態，第7 ( B ) 圖係微鏡62在關閉狀態之傾斜在-α度的狀態。因此，因應 畫像信號，藉由把在DMD50之各畫素的微鏡62之傾斜控制 200528754 成如第6圖，則入射至DMD50的光係朝各自的微鏡62之傾斜 方向反射。 又，第6圖係放大DMD50之一部分，表示微鏡62係被控 制+ α度或一 α度之一狀態例。各自的微鏡6 2之開啓、關 閉控制係由連接在DMD50之未圖示的控制器所執行。此外， 在依關閉狀態的微鏡62、光束會被反射之方向上係配置有 光吸收體（未圖示）。 又，DMD5 0係配置成其短邊與副掃描方向成指定角度0 (例 如，1 °〜5 ° )般地稍微傾斜者爲較佳。第8 ( A )圖係表示 不使DMD50傾斜時之依各微鏡的反射光像（曝光束）53之 掃描軌跡，第8 ( B)圖係使DMD50傾斜時之曝光束53的掃 描軌跡。 在DMD50中，於長度方向配置有多數個微鏡（例如，800個） 之微鏡列係在寬度方向配置有多數組（例如，600組），如第 δ (B)圖所示，藉由傾斜DMD50,使得依各微鏡的曝光束53 之掃描軌跡（掃描線）的間距P i係變得比不傾斜DMD 5 0時 之掃描線的間距P2還狹小，可使解像度大幅地提升。一方面， 因爲DMD50之傾斜角微小之故，所以使DMD50傾斜時之掃描 寬度W2和使DMD50不傾斜時之掃描寬度W1係略相同。 又，依不同的微鏡列、相同掃描線上係成爲重疊被曝光（多 重曝光）。如此，藉由被多重曝光，而可控制曝光位置的微少 量，可實現高精細的曝光。又，藉由微少量的曝光位置控制等 之數位畫像處理，可無段差地把配列在主掃描方向之複數個 曝光頭間之連接處予以連繫。 -1 6 - 200528754 此外，取代DMD50之傾斜，而改以使各微鏡列在與副掃描方 向正交的方向，以指定間隔偏移作棋盤狀配置，也可獲得同樣 的效果。 光纖陣列光源6 6，係如第9 ( A )圖所示，具備複數（例如，6 個）個雷射模組64,各雷射模組64係結合在多模光纖30之 一端。多模光纖30之他端係結合有核心直徑爲與多模光纖 30相同且包層直徑較多模光纖30小的光纖31，如第9 ( C ) 圖所示，光纖3 1的出射端部（發光點）係沿著與副掃描方向 正交的主掃描方向配置1列而構成雷射出射部68。此外，如 第9 ( D )圖所示，也可把發光點沿著主掃描方向成2列地配 列。 光纖3 1之出射端部係如第9 ( B )圖所示，表面係被平坦 的2片支持板6 5挾住而固定著。又，光纖3 1之光出射側係 配置有玻璃等之透明的保護板6 3，以保護光纖31之端面。 保護板63也可與光纖31的端面密接配置，也可使光纖31之 端面被密封般地配置。光纖31之出射端部雖然光密度且容 易集塵而劣化，但是藉由配置保護板6 3，不但可防止塵埃對 端面之附著同時可延緩劣化。 在本例中，爲了將包層直徑小的光纖3 1之出射端無間隙地 配列成1歹!1，在以包層直徑大的部分鄰接的2條多模光纖3 0 之間將多模光纖30聚集，而被聚集的多模光纖30所結合之 光纖3 1的出射端，係配列成被挾於以包層直徑爲大的部分鄰 接之2條多模光纖3 0所結合的光纖3 1之2個出射端之間。 這樣的光纖，例如第1 〇圖所示，係藉由在包層直徑爲大的 -17- 200528754 多模光纖30之雷射光出射側的前端部分，將長度1〜30cm之 包層直徑爲小的光纖31予以同軸地結合而可獲得。2條的 光纖係光纖31之入射端面在多模光纖30之出射端面以兩光 纖的中心軸呈一致般地熔接而被結合著。如同上述，光纖3 1 之核心31a的直徑係與多模光纖30之核心30a的直徑相同 大小。 又，也可以使長度爲短包層直徑爲大的光纖中熔接有包層 直徑爲小的光纖之短尺寸光纖，經由一套圏或光連接器等而 結合至多模光纖30之出射端。藉由利用連接器等以可裝卸 地結合，以在包層直徑爲小的光纖破損時等場合，使前端部 分的交換變成容易，可減低曝光頭的維修所要之成本。此外， 以下有時把光纖3 1稱爲多模光纖30之出射端部。 以多模光纖30及光纖31而言，也可以是STEP INDEX型光 纖、GRATED INDEX型光纖、及複合型光纖之中任一。例如， 可使用由三菱電線工業株式會社所製造的STEP INDEX型光 纖。在本實施形態中，多模光纖30及光纖31係STEP INDEX 型光纖，多模光纖30係包層直徑=125// m、核心直徑=25// πι、NA =0.2、入射端面塗層的透過率= 99· 5%以上，光纖31 係包層直徑=60 // m、核心直徑=25 # m、NA= 0 · 2。 一般，以紅外線區域的雷射光而言，若光纖的包層直徑設定 小則傳送損失會增加。因此，係因應雷射光之波長帶域以決 定合適的包層直徑。然而，波長越短傳送損失係變少，以由 GaN系半導體雷射所出射的波長40 5nm之雷射光而言，即使 包層的厚度{(包層直徑-核心直徑）/2 }爲傳送800nm之波 200528754 長帶域的紅外光時之1 / 2左右、或爲傳送通信用之丨.5 /z m 之波長頻帶的紅外光時之約1 / 4，傳送損失也幾乎不會增 加。因此，可把包層直徑設小成爲6 0 // m。藉由使用G a N系 的LD而可容易獲得光密度高之光束。 但是，光纖31的包層直徑不限定爲60#m。以往在光纖光 源所使用之光纖的包層直徑爲1 2 5 μ m，但是包層直徑越小則 焦點深度係變越深，所以多模光纖的包層直徑係80 // m以下 較好，60 # m以下更好，40 // m以下更佳。一方面，核心直徑有 必要至少爲3〜4 // m，所以光纖3 1的包層直徑係1 0 // m以上 較佳。 雷射模組64係由第1 1圖所示之合波雷射光源（光纖光源） 所構成。此合波雷射光源係由如下所構成：即，配列固定在 熱塊1 0上之複數（例如7個）個晶片狀之橫多模或單模之 GaN 系半導體雷射 LD1、LD2、LD3、LD4、LD5、LD6、及 LD7 ; 對應GaN系半導體雷射LD1〜LD7各自而設置之准直透鏡 11、12、13、14、15、16、及 17; 1 個集光透鏡 20; 1 條多 模光纖30。此外，半導體雷射之個數不受限爲7個。例如， 包層直徑= 60/zm、核心直徑= 50/zm、ΝΑ=0·2的多模光纖 係可入射20多個半導體雷射光，實現曝光頭5之必要光量， 且可將光纖條數減爲更少。200528754 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a photo-forming device, and in particular, to a photo-curable resin that is exposed to a light beam modulated by a spatial light modulation element in response to an image data to form a 3-dimensional model. Light forming device. [Previous technology] In recent years, with the popularization of 3D CAD (Computer Aided Design) systems, a light molding system is used, which is based on the 3D shape of an imaginary space on a computer created by 3D CAD. A three-dimensional model was formed by exposing the photocurable resin. In this photoforming system, CAD data is cut on a computer at a specified interval and then a plurality of cross-sectional data are created. Based on each cross-section data, the surface of the liquid photo-curable resin is scanned with laser light to harden into a layer, and then The resin hardened layers are sequentially laminated to form a three-dimensional model. In the photo-molding method, the liquid photo-curable resin is stored in the open top of the tank beforehand, and then the molding table arranged near the liquid surface of the photo-curable resin is sequentially sunk from the free liquid surface of the resin. The free-surface method of resin-hardened laminated layers is widely known. Conventionally, the photoforming device used in this photoforming system has the following characteristics: "Kutani Yoko: Basics, Status, Problems, Modeling Technology, Model Technology, Volume 7, Number 10, PP18-23, 1 992" Scanner is performed by laser plotter and scanner by movable mirror method. A laser plotter-type optical molding device is shown in FIG. 28. In this device, the laser light oscillated by the laser light source 2 50 reaches the XY plotter 2 5 6 through the optical fiber 25 4 provided with a shield 25 2, and then the XY plotter 2 5 6 is irradiated into the container 260 200528754. Liquid surface 266 of the photocurable resin 262. The XY positioning mechanism 258 provided with the X positioning mechanism 258a and the Y positioning mechanism 258b controls the positions of the X and Y directions of the XY plotter 2 56. Therefore, by moving the XY plotter 256 in the X direction and the Y direction, the shutter light irradiated by the XY plotter 2 5 6 is turned on and off according to the cross-section data through the shutter 252, which can be hardened. Photocurable resin at a specified portion of the liquid surface 2 6 6 262 ° However, in a laser plotter-type light molding device, there is a limit on the shutter speed or the moving speed of the plotter, and it requires a long molding time. A matter of time. Next, Fig. 29 shows a conventional optical molding apparatus using a movable mirror system using a galvanometer mirror. In this device, the laser light 2 70 is reflected by the X-axis rotating mirror 27 2 and the Y-axis rotating mirror 274 and is irradiated onto the photocurable resin 2 62. The X-axis rotating mirror 2 72 rotates with the Z-axis as the rotation axis to control the position in the X direction of the irradiation position, and the Y-axis rotating mirror 274 rotates with the X-axis as the rotation axis to control the position in the Y direction of the irradiation position. Compared with the laser plotter method, the movable mirror method can increase the scanning speed. However, in the light-molding device based on the movable mirror method, since a small laser light spot is used for scanning, even if a high-speed scanning of, for example, 2 to 12 m / s is performed, a three-dimensional model of about 10 cm cubic requires 8 in molding. It takes ~ 24 hours for the molding process to take a long time. In addition, the laser light 270 is reflected only when the Y-axis rotating mirror 2 74 is incident at a specified range of angle. Therefore, the irradiation area is limited. To enlarge the irradiation area, the Y-axis rotating mirror 2 74 is placed away from the light-hardening property. When the position of the resin 2 6 2 is high, there is a problem that the diameter of the laser light spot becomes 200528754. The positioning accuracy of the ambassador deteriorates and the molding accuracy decreases. When the rotation angle of the γ-axis rotating mirror 274 is increased, although the irradiation range is enlarged, the positioning accuracy is similarly deteriorated and the pincushion error is increased. Furthermore, the optical molding device using a galvanometer mirror also has the problems of complicated adjustment of the optical system such as strain correction and adjustment of the optical axis, complicated optical system, and an increase in the size of the entire device. In addition, in any type of optical molding device, the laser light source is a high-output ultraviolet laser light source. In the past, it was generally based on gas lasers such as argon lasers or on HG (third high harmonic). Solid lasers and gas lasers are troublesome for maintenance such as tube exchanges, coupled with high prices and the cost of photoforming equipment, and additional equipment such as cooling coolers are required, so the entire system is large. In THG solid-state lasers, the pulse switching action of the Q switch is slow and it is not suitable for high-speed exposure. In addition, the use of THG light deteriorates the wavelength conversion efficiency and cannot achieve a high output, and it is necessary to use a high output as an exciter for semiconductor lasers, so it becomes a very high cost. In view of this problem, Japanese Patent Laid-Open No. 1 1-1 3 8 6 4 5 discloses a light shaping device having a plurality of light spots capable of irradiating with a size larger than a single pixel. The light source of the exposure area, the pixels are multiple exposed by multiple light sources. In this device, pixels are multiple-exposed by a plurality of light sources, so even if the output of each light source is small, an inexpensive light-emitting diode (LED) can be used as a light source. However, in the light molding device described in Japanese Patent Laid-Open No. 1 1-1 3 864 5, the spot size of each light source is large for each single pixel, so it cannot be used for high-precision molding, and The pixels are multiple-exposed by multiple light sources, 8-200528754, so there is a lot of waste in action, and it also has the problem of taking a long time in molding. In addition, since the number of light sources is increased, there is a problem that the so-called exposure section is enlarged. Furthermore, even if multiple exposures are performed with the output light amount of the LED, there is a possibility that sufficient resolution cannot be obtained. The present invention has been made in view of the problems of the foregoing prior art, and an object of the present invention is to provide a light molding device capable of high-speed molding. Still another object of the present invention is to provide a photoforming apparatus capable of high-precision molding. [Summary of the Problem] [Means for Solving the Problems] In order to achieve the above-mentioned object, the light molding device of the present invention is characterized by having: a molding tank that contains a photocurable resin; and a support table for supporting the lifting and lowering in the molding tank. A ground-shaped molding; an exposure head including: a laser device to irradiate laser light; a spatial light modulation element arranged on the substrate in a two-dimensional array with a plurality of pixels corresponding to respective control signals that can change the light modulation state Control means for modulating laser light radiated by the laser device; control means using control signals generated by corresponding exposure information to control a number which is less than the total number of pixel units arranged on the substrate A plurality of pixel units; an optical system that images the laser light modulated in each pixel unit on the liquid surface of a light-curable resin housed in the molding tank; and a moving means to make the exposure head to the light-hardenability The liquid level of the resin moves relatively. In the light molding apparatus of the present invention, the laser light modulated by each pixel portion of the spatial light modulation element of the exposure head is imaged on the liquid surface of the photocurable resin housed in the molding grain, and simultaneously used The moving means relatively moves the exposure head to the liquid surface of the photocurable resin to scan and expose the liquid surface of the photocurable-9-200528754 resin stored in the molding tank. The exposed resin is hardened to produce a hardened resin layer. After the hardened resin layer is formed into a single layer, a support table provided in the molding tank for supporting the molded article is lowered to form a new resin surface, and a second hardened resin layer is similarly formed. In this way, the resin is hardened and lowered repeatedly, and the hardened resin layer is sequentially laminated to form a three-dimensional model. In the light shaping device of the present invention, the spatial light modulation element of the exposure head is based on a control signal generated in response to the exposure information to control a number that is less than the total number of pixel units arranged on the substrate. Each of the plurality of pixel units is different. That is, not all the pixel sections arranged on the substrate are controlled, but a part of the pixel sections is controlled. Therefore, the number of pixel units to be controlled is reduced, and the transfer speed of the control signal becomes shorter than that when the control signals of all the pixel units are transferred. According to this, the modulation speed can be increased to achieve high-speed molding. In the above-mentioned light shaping device, the length of the pixel unit controlled by the control means in the direction corresponding to the specified direction is longer than the pixel unit included in the area longer than the length of the direction crossing the specified direction. good. By using a pixel portion in a long area in the direction in which the light emitting points of the laser device are aligned, the number of exposure heads to be used can be reduced. Further, in the above-mentioned optical shaping device, the laser device may be configured to include a plurality of optical fiber light sources for emitting laser light incident from an incident end of the optical fiber from an emission end thereof, and The light emitting points are respectively arranged as a fiber array light source in a one-dimensional or two-dimensional array. It is also possible to construct a fiber bundle light source in which light emitting points in the emitting ends of the plurality of optical fiber light sources are arranged in a bundle. By arraying or bundling, high output can be achieved. For this optical fiber, it is preferable to use an optical fiber with a uniform core diameter and a smaller cladding diameter at the exit end than the cladding diameter at the entrance end. For each optical fiber light source constituting an optical fiber array light source or the like, a multiplexed laser light source that multiplexes laser light and enters the optical fiber is preferable. With a multiplexed laser light source, high brightness and high output can be obtained. In addition, since the number of arrayed optical fibers for obtaining the same light output can be resolved without requiring a large number, the cost is low. In addition, since the number of optical fibers is small, the light emitting area when the array is changed is small (higher brightness). Since the aforementioned optical fiber having a small cladding diameter is used, the light emitting area during arraying can be changed small and high brightness can be achieved. Even in the case where the spatial light modulation element is partially used, by using a high-brightness fiber array light source or a fiber bundle light source, laser light can be efficiently irradiated to the used part, especially for the space modulation element NA. When it is smaller, the focal depth of the imaging beam after passing through the spatial modulation element can be deepened, and the laser light can be illuminated with high optical density. This makes high-speed and high-definition exposure and molding systems possible. For example, molding of a minute shape with a class of 1 V m is also possible. For example, an optical fiber light source may be constituted as follows: a plurality of semiconductor lasers; a plurality of semiconductor lasers; one optical fiber; and a light collection optical system for collecting the laser beams emitted from the plurality of semiconductor lasers, and The light beam is coupled to the incident end of the fiber. Further, the optical fiber light source may be composed of a multi-cavity laser having a plurality of light emitting points; one optical fiber; and a light collecting optical system for collecting the laser beams emitted from the plurality of light emitting points and collecting the light. The light beam is coupled to the incident end of the fiber. Furthermore, the laser beams emitted from the light emitting points of a plurality of multi-cavity lasers may be collected and combined into one optical fiber. As for the spatial modulation element used in the above-mentioned photoforming device, a digital micro-mirror composed of a plurality of micro-mirrors arranged in a two-dimensional shape on the substrate in which the reflecting surface angle can be changed in accordance with each control signal is -11- 200528754 degrees. A mirror device (DMD) or a two-dimensional array of liquid crystal shutter arrays formed by a plurality of liquid crystal cells that can block transmitted light in response to each control signal. Like DMD, by using a spatial light modulator with a large number of pixel sections, exposure is performed on a large number of channels to prevent power dispersion and thermal strain. For the laser device used in the above-mentioned optical shaping device, a laser light having a wavelength of 3 50 to 4 50 nm is preferred. For example, by using a GaN-based semiconductor laser for a semiconductor laser, a laser device for irradiating laser light having a wavelength of 3 50 to 450 nm can be constructed. By using laser light having a wavelength of 3 50 to 4 50 nm, the light absorption rate of the photocurable resin can be greatly increased compared with the case where laser light having an infrared wavelength range is used. Laser light with a wavelength of 3 50 to 450 nm has a short wavelength, so the photon energy is large, and conversion into a thermal energy system is easy. In this way, the laser light system with a wavelength of 350 to 450 nm has a large light absorption rate and is easily converted into a thermal energy system. Therefore, the photocurable resin can be cured at a high speed for molding. The wavelength range of the laser light is preferably 3 50 to 420 nm. In terms of utilizing a low-cost GaN-based semiconductor laser, a wavelength of 405 nm is particularly preferable. In addition, the above-mentioned optical shaping apparatus may be configured as a multi-head type optical shaping apparatus having a plurality of exposure heads. The multi-head type can further increase the speed of molding. [Embodiment] [Structure of Photoforming Apparatus] As shown in FIG. 1, a photoforming apparatus according to an embodiment of the present invention has a container 156 opened at the top, and a liquid photohardenability is stored in the container 156. Resin 150. Further, a flat-shaped lifting stage 152 is arranged in the container 156, and the lifting stage 152 is supported by the support arranged outside the container 156-12-200528754 Section 154. The supporting portion 15 4 is provided with a male spiral portion 15 4 A, and the male spiral portion 15 4 A is screwed with a lead screw 1 5 5 which can be rotated by a driving motor (not shown). Along with the rotation of the lead screw 155, the lifting stage 152 is lifted. Above the liquid surface of the photo-curable resin 15 2 contained in the container 156, a box-shaped scanner 162 is arranged so that its longitudinal direction is toward the width direction of the container 156. The scanner 162 is supported by two support arms 160 mounted on both sides in the width direction. The scanner 162 is connected to a controller (not shown) for controlling it. In addition, guide portions 158 extending in the sub-scanning direction are provided on both sides of the container 1 56 in the longitudinal direction. The lower ends of the two support arms 160 are attached to the guide portions 1 58 so as to follow The sub-scanning direction is reciprocally mounted. In addition, the photoforming apparatus is provided with a driving device (not shown) for driving the support arm 160 together with the scanner 162 along the guide portion 158. As shown in FIG. 2, the scanner 1 62 (for example, 3 rows and 5 columns) is provided with a plurality of (for example, 14) exposure heads 1 6 6 arranged in a substantially matrix arrangement. In this example, because of the relationship with the width in the width direction of the container 56, four exposure heads 166 are arranged in the third row. In addition, when each exposure head arranged in the m-th row and the n-th column is shown, it is shown as the exposure head 16 6mn. The exposure area 168 of the exposure head 166 has a rectangular shape with the short sides in the sub-scanning direction. Therefore, along with the movement of the scanner 1 62, the exposed areas (cured areas) 1 70 in the form of bands of the respective exposure heads 166 are formed on the liquid surface of the photocurable resin 1 52. In addition, when an exposure area formed by each of the exposure heads arranged in the m-th row and the n-th column is to be expressed, it is expressed as an exposure area of 168 mn. 200528754 As shown in Figs. 3 (A) and 3 (B), the strip-shaped exposed areas ι70 are arranged in a direction orthogonal to the sub-scanning direction without gaps, and the exposure heads of each line are arranged in a line. Each of them is arranged at a predetermined interval (a natural number multiple of the long side of the exposure area, which is two times in this embodiment) in the arrangement direction. Therefore, the unexposed portion between the exposed area 1 6 8 ii of the first line and the exposed area 1 6 8 i 2 can be determined by the exposed area 1 6 8 2 i of the second line and the exposed area 1 of the third line. 6 831 while exposed. The exposure heads 166 ^ -166 ^ are each provided with a digital micromirror device (DMD) 50 as shown in Figs. 4, 5 (A) and 5 (B). Pixels are used for modulating spatial light modulation elements. This DMD50 is connected to a controller with a data processing section and a mirror drive control section (not shown). The data processing unit of this controller generates a control signal for driving and controlling each micromirror in the area to be controlled by the DMD50 of each exposure head 166 based on the input image data. The area to be controlled is described later. The light incident side of the DMD50 is arranged in the following order: the fiber-optic array light source of the laser emitting part provided with the outgoing end portion (light emitting point) of the optical fiber in a line along the direction corresponding to the long side direction of the exposure area 168 6 6; a lens system 67 that corrects the laser light emitted from the optical fiber array light source 66 and collects the light on the DMD; and a mirror that reflects the laser light of the transmission lens system 67 toward the DMD 50 6 9 ° lens system 67, system One pair of combination lenses 7 by parallelizing the laser light emitted by the optical fiber array light source 66 to one pair, and one pair of combination lenses 7 3 to correct the light amount distribution of the laser light that is parallelized, and 3, and the amount of light A 14-200528754 is composed of a collection lens 75 that distributes corrected laser light to collect light on the DMD. The combination lens 7 3 is provided with the alignment direction of the laser emission end, the portion close to the optical axis of the lens is an enlarged beam and the portion away from the optical axis is a beam reduction, and the light is illuminated in a direction orthogonal to the alignment direction. The function of passing through as it is makes the laser light distribution uniformly correct the laser light. Further, on the light reflection side of the DMD 50, lens systems 54 and 58 are provided for imaging the laser light reflected by the DMD 50 on the scanning surface (exposed surface) 56 of the photosensitive material 150. The lens systems 54 and 58 are arranged so that the DMD 50 and the exposed surface 56 are in a conjugate relationship. As shown in FIG. 6, DMD50 is configured on a SRAM cell (memory cell) 60, and a micromirror (micromirror) 62 is supported by a pillar, and is configured by a plurality of pixels (for example, PIXEL) (600 x 800) micro-mirror mirror arrangement. A micromirror 62 supported by a pillar is provided at the top of each picture and element. The surface of the micromirror 62 is vapor-deposited with a material having a high reflectance such as aluminum. The reflectance of the micromirror 62 is 90% or more. And under the micromirror 62, a CMOS SRAM cell 60 equipped with a silicon gate manufactured in a general semiconductor memory production line is arranged through a pillar including a hinge and a yoke, and the entire system is configured as a whole (integrated type). . When a digital signal is written into the SRAM cell 60 of the DMD50, the micromirror 62 supported by the pillar is centered on the diagonal line, and is relative to the substrate side on which the DMD50 is disposed, at α degrees (for example, ± 10 degrees). ) The range is tilted. Figure 7 (A) shows the state where the tilt of the micromirror 62 is + α degrees in the open state, and Figure 7 (B) shows the state where the tilt of the micro mirror 62 is -α degrees in the closed state. Therefore, according to the image signal, by controlling the tilt of the micromirror 62 of each pixel in the DMD50 200528754 as shown in FIG. 6, the light incident on the DMD50 is reflected toward the tilt direction of the respective micromirror 62. Fig. 6 is an enlarged view of a part of DMD50, and shows an example of a state in which the micromirror 62 is controlled by + α degree or -α degree. The on / off control of the respective micromirrors 62 is performed by a controller (not shown) connected to the DMD50. In addition, a light absorber (not shown) is arranged in the direction in which the micromirror 62 in the closed state and the light beam is reflected. The DMD50 is preferably arranged such that the short side thereof is slightly inclined at a predetermined angle 0 (for example, 1 ° to 5 °) with respect to the sub-scanning direction. Figure 8 (A) shows the scanning trace of the reflected light image (exposure beam) 53 of each micromirror when the DMD50 is not tilted, and Figure 8 (B) shows the scanning trace of the exposure beam 53 when the DMD50 is tilted. In the DMD50, a micromirror array in which a plurality of micromirrors (for example, 800) are arranged in the length direction is provided with multiple arrays (for example, 600 groups) in the width direction, as shown in FIG. Δ (B). Inclining the DMD50 makes the pitch P i of the scanning trace (scanning line) of the exposure beam 53 according to each micromirror narrower than the pitch P2 of the scanning line when the DMD 50 is not inclined, which can greatly improve the resolution. On the one hand, because the tilt angle of the DMD50 is small, the scan width W2 when the DMD50 is tilted is slightly the same as the scan width W1 when the DMD50 is not tilted. In addition, different micro-mirror arrays and the same scanning line are overlapped and exposed (multiple exposures). In this way, by being multiple-exposed, a small amount of the exposure position can be controlled, and high-definition exposure can be achieved. In addition, with a small amount of digital image processing such as exposure position control, it is possible to link the connection points between the plurality of exposure heads arranged in the main scanning direction without step differences. -1 6-200528754 In addition, instead of the inclination of DMD50, the micromirror array is arranged in a direction orthogonal to the sub-scanning direction, and it is arranged in a checkerboard pattern at a specified interval offset. The same effect can be obtained. The optical fiber array light source 66, as shown in FIG. 9 (A), includes a plurality (for example, six) of laser modules 64, and each laser module 64 is coupled to one end of the multimode fiber 30. The other end of the multimode optical fiber 30 is combined with an optical fiber 31 having the same core diameter as that of the multimode optical fiber 30 and a small cladding diameter of the optical fiber 30 having a larger cladding diameter. As shown in FIG. 9 (C), the exit end of the optical fiber 31 (Light-emitting points) A laser emission unit 68 is configured by arranging one row along the main scanning direction orthogonal to the sub-scanning direction. In addition, as shown in FIG. 9 (D), the light emitting points may be arranged in two rows along the main scanning direction. The exit end of the optical fiber 31 is as shown in Fig. 9 (B), and the surface is held by two flat support plates 65 and fixed. A light-emitting side of the optical fiber 31 is provided with a transparent protective plate 63 such as glass to protect the end face of the optical fiber 31. The protective plate 63 may be arranged in close contact with the end face of the optical fiber 31, or the end face of the optical fiber 31 may be arranged in a sealed manner. Although the exit end portion of the optical fiber 31 is degraded due to the optical density and the possibility of dust collection, by disposing the protective plate 63, it is possible to prevent the adhesion of dust to the end surface and delay the deterioration. In this example, in order to arrange the exit ends of the optical fiber 31 with a small cladding diameter to 1 歹! 1 without gaps, a multimode fiber is placed between two multimode optical fibers 3 0 adjacent to each other with a large cladding diameter. The optical fiber 30 is gathered, and the exit end of the optical fiber 3 1 combined by the gathered multi-mode optical fiber 30 is arranged to be the optical fiber 3 combined by two multi-mode optical fibers 30 that are adjacent to each other with a large cladding diameter. Between 1 and 2 exit ends. Such an optical fiber, for example, as shown in FIG. 10, has a cladding diameter of 1 to 30 cm by reducing the diameter of the cladding of 1 to 30 cm by using the front end portion of the laser light exit side of the cladding diameter of -17-200528754 which is large. The optical fiber 31 can be obtained by coaxially bonding. The incident end faces of the two optical fiber-based optical fibers 31 are fused to each other at the exit end face of the multimode optical fiber 30 with the central axes of the two fibers uniformly joined. As described above, the diameter of the core 31a of the optical fiber 31 is the same as the diameter of the core 30a of the multimode optical fiber 30. Alternatively, a short-sized optical fiber having a small cladding diameter and an optical fiber having a short cladding diameter and a large cladding diameter may be fused to the emitting end of the multimode optical fiber 30 through a set of chirps or optical connectors. By detachably combining with a connector or the like, when the optical fiber with a small cladding diameter is damaged, the front-end part can be exchanged easily, and the cost required for maintenance of the exposure head can be reduced. In addition, hereinafter, the optical fiber 31 is sometimes referred to as an output end portion of the multimode optical fiber 30. The multimode optical fiber 30 and the optical fiber 31 may be any of STEP INDEX type optical fiber, GRATED INDEX type optical fiber, and composite type optical fiber. For example, a STEP INDEX type optical fiber manufactured by Mitsubishi Electric Industries, Ltd. can be used. In this embodiment, the multimode optical fiber 30 and the optical fiber 31 are STEP INDEX type optical fibers, and the multimode optical fiber 30 is a cladding diameter = 125 // m, a core diameter = 25 // πm, NA = 0.2, Transmittance = 99.5% or more, fiber 31 cladding diameter = 60 // m, core diameter = 25 # m, NA = 0 · 2. Generally, in the case of laser light in the infrared region, if the cladding diameter of the optical fiber is set to be small, the transmission loss increases. Therefore, the appropriate cladding diameter is determined according to the wavelength band of the laser light. However, the transmission loss decreases with shorter wavelengths. For laser light with a wavelength of 40 to 5 nm emitted by a GaN-based semiconductor laser, even if the thickness of the cladding {(cladding diameter-core diameter) / 2} is 800 nm, Wave length 200528754 is about 1/2 of the infrared light in the long band, or about 1/4 of the infrared light in the wavelength band of .5 / zm for communication, and the transmission loss will hardly increase. Therefore, the cladding diameter can be made small to 6 0 // m. By using a GaN-based LD, a light beam having a high optical density can be easily obtained. However, the cladding diameter of the optical fiber 31 is not limited to 60 # m. In the past, the cladding diameter of the optical fiber used in the optical fiber light source was 1 2 5 μm, but the smaller the cladding diameter, the deeper the focal depth system, so the cladding diameter of the multimode fiber is preferably below 80 // m, 60 # m is better, 40 // m is better. On the one hand, the core diameter must be at least 3 ~ 4 // m, so the cladding diameter of the optical fiber 3 1 is preferably more than 1 0 // m. The laser module 64 is composed of a multiplexed laser light source (optical fiber light source) shown in FIG. 11. This multiplexed laser light source is composed of a plurality of (for example, seven) wafer-shaped horizontal multimode or single-mode GaN-based semiconductor lasers LD1, LD2, and LD3 arranged on the thermal block 10. , LD4, LD5, LD6, and LD7; Collimating lenses 11, 12, 13, 14, 15, 16, and 17 provided for each of the GaN-based semiconductor lasers LD1 to LD7; 1 collecting lens 20; 1 Multimode fiber 30. In addition, the number of semiconductor lasers is not limited to seven. For example, a multimode fiber system with cladding diameter = 60 / zm, core diameter = 50 / zm, and NA = 0 · 2 can enter more than 20 semiconductor lasers to achieve the necessary amount of light for exposure head 5, and the number of optical fibers can be changed. Reduced to less.
GaN系半導體雷射LD1〜LD7係振邊波長全部共通（例 *<40 511111)，最大輸出也全部共通（例如，多模雷射爲！〇〇mw、 單模雷射爲30mW)。此外，以GaN系半導體雷射LD1〜LD7而 言，在3 50nm〜450nm的波長範圍，也可使用具備有上述之 200528754 4 0 5 n m以外的振盪波長之雷射。 上述之合波雷射光源係如第1 2及1 3圖所示，連同其他光 學要素一起被收納在上方有開口之箱狀的封裝40內。封裝 40係具備有關閉其開口般所作成之封裝蓋41，在脫氣處理後 導入封止氣體，藉由把封裝40之開口以封裝蓋4 1閉合，而 在由封裝40和封裝蓋4 1所形成之閉空間（封止空間）內， 氣密封止上述合波雷射光源。 在封裝40的底面係固定有基板42,此基板42的上面係安 裝有：該熱塊1 0 ;保持集光透鏡20的集光透鏡保持器；以 及用以保持多模光纖30的入射端部之光纖保持器46。多模 光纖30的出射端部係由形成於封裝40之壁面的開口被引出 至封裝外。 又，在熱塊1 0的側面係安裝有准直透鏡保持器44，准直透 鏡1 1〜1 7係被保持著。在封裝40之橫壁面形成有開口，通 過此開口，用以對GaN系半導體雷射LD1〜LD7供給驅動電流 的配線47係被引出至封裝外。 此外，在第13圖中，爲避免圖面之煩雜化，僅由複數個GaN 系半導體雷射之中、對GaN系半導體雷射LD7附加編號，複 數個准直透鏡之中僅對賦予准直透鏡1 7附加編號。 第14圖係表示上述准直透鏡11〜17之安裝部分的正面形 狀。准直透鏡1 1〜1 7係各自形成爲以平行的平面，細長地切 取包含有具備非球面的圓形透鏡之光軸的區域。此細長形狀 的准直透鏡，例如係可藉由將樹脂或光學玻璃予以模製成形 而形成。准直透鏡11〜17係，長度方向爲與GaN系半導體雷 -20- 200528754 射LD1〜LD7之發光點的配列方向（第14圖之左右方向）成 正交般地被密接配置在上述發光點之配列方向。 一方面，以GaN系半導體雷射LD1〜LD7而言，係使用具備 發光寬度爲2 v m的活性層，與活性層平行的方向、直角的方 向之視角各自爲例如10° 、30°的狀態之發射各個雷射光束 B1〜B7之雷射。此等GaN系半導體雷射LD1〜LD7係在與 活性層平行的方向上發光點成1列排列地配設著。 因此，由各發光點所發出之雷射光束B1〜B7係如上述般、 對細長形狀之各准直透鏡1 1〜‘ 1 7，係成爲以視角角度爲大的 方向與長度方向一致，視角角度爲小的方向係與寬度方向 (與長度方向正交之方向）一致的狀態入射。亦即，各准直 透鏡11〜17之寬度爲1.1mm、長度爲4.6mm，入射至此等之 雷射光束B1〜B7的水平方向、垂直方向的光束直徑係各自 爲0.9 mm、2.6 mm。又，准直透鏡11〜17係各自爲焦點距離f丨 = 3mm、NA=0.6、透鏡配置間距=1.25mm。 集光透鏡20,係以平行的平面，細長地切取包含有具備 非球面之圓形透鏡的光軸之區域，准直透鏡1 1〜1 7的配列方 向，亦即形成爲在水平方向爲長、且在與其垂直的方向爲 短的形狀。此集光透鏡20係焦點距離f2 = 23mm、NA = 0 . 2。 此集光透鏡20也係藉由例如將樹脂或光學玻璃予以模製成 形而形成。 〔光成型裝置之動作〕 以下茲針對該光成型裝置之動作作說明。 在掃描器162之各曝光頭166,由構成光纖陣列光源66之 200528754 合波雷射光源的GaN系半導體雷射LD1〜LD7各自以發散光 狀態所出射之雷射光束B 1、B2、B3、B4、B5、B6、及B7各 自係由對應的准直透鏡1 1〜1 7而被平行光化。被平行光化 之雷射光束B1〜B7’係由集光透鏡20所集光而收束至多模光 纖3 0之核心3 0 a的入射端面。 本例中，由准直透鏡11〜17及集光透鏡20構成了集光光 學系統，由其集光光學系統和多模光纖3 0而構成合波光學系 統。亦即，利用集光透鏡20、如同上述之被集光之雷射光束 B1〜B7係入射至此多模光纖30之核心30a以在光纖內傳送， 而被合波成1條雷射光束B再由結合至多模光纖30之出射 端部的光纖3 1出射。 於各雷射模組中，雷射光束B1〜B7對多模光纖30之結合 效率係〇 . 85、且GaN系半導體雷射LD1〜LD7之各輸出爲30mW 時，被陣列狀配列的各光纖31係可獲得輸出約180mW( = 30Mw X 0.85X7)之合波雷射光束B。因此，以陣列配列有6條光 纖31的雷射出射部68之輸出約爲1W ( = 180mWX 6 )。 光纖陣列光源66之雷射出射部68上係沿著主掃描方向呈 一列地配列有此種高亮度之發光點。由於把來自單一半導體 雷射之雷射光結合至1條光纖之以往的光纖光源係低輸出， 所以若未配列多數列則不能獲得所期望的輸出，但在本實施 形態所使用之合波雷射光源係高輸出，所以少數列，例如即使 1列也可獲得所期望的輸出。 例如，在將半導體雷射和光纖以1對1結合之以往的光纖 光源中，通常，以半導體雷射而言，係使用輸出爲30mW (毫 200528754 瓦）程度之雷射，以光纖而言，因爲係使用核心直徑5 〇 M m、 包層直徑1 2 5 A in、ΝΑ (開口數）Ο · 2之多模光纖，所以若欲 獲得約1W (瓦）的輸出，則多模光纖必需把48條（8X6) 成一束，發光區域之面積爲0.62mm2 ( 0.675mmX〇.925mm), 所以在雷射出射部68之亮度爲1.6X106 ( W/m2)，每1條光 纖之亮度爲3.2X106( W/m2 )。 相對地，在本實施形態中，如同上述，以多模光纖6條約可 獲得1 IV的輸出，在雷射出射部68之發光區域的面積爲 0.0081mm2 ( 0.325mmX0.025mm)，所以雷射出射部 68 之亮 度成爲1 2 3 X 1 06 (W/m2)，相較於以往約可圖謀80倍的高亮 度化。又，每1條光纖之亮度爲90 X 1 06 ( W/m2 )，相較於以 往約可圖謀28倍的高亮度化。 在此，參照第15 ( A)及15 ( B)圖，針對以往的曝光頭和 本實施形態的曝光頭之焦點深度的差異加以說明。以往的曝 光頭之束狀光纖光源的發光區域之副掃描方向的直徑爲 0 . 6 7 5mm，本實施形態之曝光頭的光纖陣列光源之發光區域的 副掃描方向的直徑爲0 . 02 5mm。如第15 A 圖所示，在以往 的曝光頭中，光源（束狀光纖光源）1之發光區域大，所以對 DMD3入射的光束之角度變大，其結果，對掃描面5入射的光 束之角度變大。爲此，相對於集光方向（焦點方向之偏差）， 光束直徑係易過寬。 一方面，如第1 5 ( B )圖所示，在本實施形態的曝光頭中， 光纖陣列光源6 6之發光區域的副掃描方向之直徑小，所以通 過透鏡系67對DMD50入射的光束之角度變小，其結果，對掃 200528754 描面5 6入射的光束之角度變小。亦即，焦點深度變深。在本 例中，發光區域之副掃描方向的徑係約爲以往的30倍，可獲 得與略繞折界限相當的焦點深度。因此適於微小光點之曝 光。對此焦點深度之效果係在曝光頭的必要光量越大越顯著 且有效。在此例中，被投影在曝光面之1畫素尺寸係1 〇 m X 1 0 /z m。此外，DMD係反射型的空間調變元件，如第1 5 ( A ) 及1 5 ( B )圖係用以說明光學方面之關係的展開圖。 對應一層份的曝光圖案之畫像資料係被輸入連接在DMD50 之未圖示的控制器，且暫時記憶在控制器內之圖框記億體。 此畫像資料係以2進制（點記錄之有無）來表示構成畫像之 各畫素的濃度之資料。 掃描器162係依未圖示的驅動裝置，沿著導引部158由副 掃描方向之上游側往下游側以一定速度被移動。當掃描器 1 62開始移動時，被記憶在圖框記憶體之畫像資料係各複數 線被依序讀出，再依據於資料處理部讀出的畫像資料而生成 對各曝光頭1 66之控制信號。然後，利用鏡驅動控制部，依據 生成的控制信號、各曝光頭166之DMD50的微鏡各自係被控 制開啓、關閉。 當雷射光由光纖陣列光源66被照射至DMD50時，則在 DMD50之微鏡爲開啓狀態時被反射之雷射光係，經由透鏡系 54、58而被成像在光硬化性樹脂150之液面（被曝光面）56 上。如此一來，由光纖陣列光源6 6所出射的雷射光係在各畫 素被開啓、關閉，光硬化性樹脂1 50係以與DMD50之使用畫 素數略同數量之畫素單位（曝光區域168)被曝光而硬化。 - 24 - 200528754 又，藉由掃描器162被以一定速度移動，光硬化性樹脂1 50 之液面被執行副掃描，以形成各曝光頭1 6 6帶狀的燒結區域 170 ° 如第16( A)及16( B)圖所示，本實施形態中，於DMD50, 在主掃描方向配列有800個微鏡的微鏡列雖然在副掃描方向 配列有600組，但在本實施形態中，係依控制器來控制僅一部 分的微鏡列（例如，800個X 1 00列）被驅動。 如第16(A)圖所示，也可以使用配置在DMD50之中央部 的微鏡列，如第16 ( B)圖所示，也可以使用配置在DMD50之 端部的微鏡列。又，在一部分的微鏡產生缺陷的場合時，要使 用未發生缺陷的微鏡列等，因應狀況也可適宜變更要使用的 微鏡列。 DMD50的資料處理速度上係有其限度，與要使用之畫素數 成比例而每1線的調變速度係被決定，所以藉由僅使用一部 分的微鏡列，每1線的調變速度變快。一方面，在連續地使 曝光頭對相對移動之曝光方式時，並沒有將副掃描方向的畫 素予以全部使用之必要。 例如，600組的微鏡列之中，在僅使用300組之場合，與600 組全部使用之場合相比較下，係可將每1線調變快2倍。 又，600組的微鏡列之中，在僅使用200組之場合，與600組 全部使用之場合相比較下，係可將每1線調變快3倍。亦即， 可在副掃描方向將500mm的區域以17秒曝光。再者，在僅使 用1 0 0組之場合時，係可將每1線調變快6倍。亦即，可在副 掃描方向將500mm的區域以9秒曝光。 200528754 名人使用之微鏡列的數目，亦即，配置在副掃描方向之微鏡的 個數係10以上且200以下較好，10以上且100以下更好。 由於相當於1畫素之每1個微鏡的面積爲15emXl5/zm，所 以若換算爲DMD50的使用區域，則1 2mm X150// m以上且1 2mm X 3_以下的區域較好，12mmX 150 # m以上且12mmX 1 . 5mm以 下的區域更好。 欲使用之微鏡列的數目若在上述範圍，則如第1 7 ( A )及1 7 (B)圖所示，使由光纖陣列光源66所出射的雷射光在透鏡 系67施以略平行光化而可對DMD50照射。由DMD50照射雷 射光的照射區域與DMD50之使用區域係一致者爲較佳。照射 區域若較使用區域還寬則雷射光之利用效率降低。 一方面，因應透鏡系67之在副掃描方向配列之微鏡的個數， 雖然有必要將集光於DMD50上之光束的副掃描方向之直徑設 定小，但是當使用之微鏡列的數目未滿1 〇時，則入射於DMD50 之光束的角度係變大，在掃描面56中之光束的焦點深度變 淺，所以並不佳。又，以調變速度的觀點來說，使用之微鏡 列數爲200以下係較佳。此外，DMD係反射型之空間調變元 件，第1 7 ( A )及1 7 ( B )圖係用以說明光學關係的展開圖。 當利用掃描器1 6 2的1次副掃描結束1層分的硬化時，掃 描器162係依未圖示的驅動裝置，沿著導引部158回復至位 在最上游側之原點。接著，依未圖示的驅動馬達使導螺桿1 5 5 旋轉而將昇降載物台1 52降下指定量，使光硬化性樹脂1 50 的硬化部分沈到液面下，以液狀光硬化性樹脂1 50充滿硬化 部分的上方。然後，次層的畫像資料係在被輸入到連接至 - 26- 200528754 DMD50之未圖示的控制器後，再度執行依掃描器162之副掃 描。如此，反覆地執行依副掃描的曝光（硬化）和載物台之 下降，經由層疊硬化部分以形成3維模型。 如以上之說明，本實施形態的光成型裝置係具備有DMD，其 在主掃描方向配列800個微鏡之微鏡列係在副掃描方向配列 有600組，但是因爲利用控制器使僅一部分之微鏡列受驅動 般地加以控制，所以與驅動全部的微鏡列之場合相較之下，每 1線的調變速度係變快速。依此係可高速的曝光及成型。 又，用以照明DMD的光源係，使用把合波雷射光源之光纖的 出射端部作陣列配列的高亮度之光纖陣列光源，所以可獲得 高輸出且深的焦點深度，且因可獲得高的光密度輸出，所以可 執行高速且高精細成型。再者，因各光纖光源的輸出變大，使 得爲獲得所期望的輸出所必要的光纖光源數變少，所以可圖 謀光成型裝置的低成本化。 特別是在本實施形態中，由於使光纖的出射端的包層直徑 設定爲較入射端的包層直徑還小，所以發光部直徑係變更小， 可圖謀光纖陣列光源更加高亮度化。依此成爲可更精細的成 型。 此外、在上述的實施形態中，雖然已針對將DMD的微鏡 作部分地驅動之例加以說明，但是即使是在對應指定方向之 方向的長度爲比交叉於該指定方向的方向之長度還長的基板 上，使用因應各個控制信號、以2維配列有可變更反射面角 度之多數個微鏡的細長DMD，由於用以控制反射面之角度的 微鏡個數變少，所以可加速調變速度。 -27- 200528754 以下茲針對以上所說明之實施形態之變形例作說明。〔其 他空間調變元件〕 在上述的實施形態中，雖然已針對將DMD的微鏡作部分 地驅動之例加以說明，但是即使是在對應指定方向之方向的 長度爲比交叉於該指定方向的方向之長度還長的基板上，使 用因應各個控制信號、以2維配列有可變更反射面角度之多 數個微鏡的細長DMD，由於用以控制反射面之角度的微鏡個 數變少，所以可加速調變速度。 上述的實施形態中，雖然已針對作爲空間調變元件之 具備有DMD的曝光頭加以說明，例如，即使在使用有MEMS (微 機電系統）型之空間調變元件（SLM)或使用有依電氣光學 效果而調變透過光之光學元件（PLZT元件）及液晶光遮板 (FLC)等，即使在使用除MEMS型以外之空間調變元件的 場合，對基板上所配列之全部畫素部、藉由使用一部分之畫 素部，因爲可使每1畫素、每1主掃描線的調變速度加速，所 以可獲得同樣的效果。 此外，所謂的MEMS係以I C製程爲基礎的微機械技術所成 之微尺寸的感測器、致動器，然後把控制電路予以積體化的 微系統之總稱，所謂的MEMS型之空間調變元件係意味著利 用靜電力之電氣機械動作所驅動之空間調變元件。 〔雷射驅動方法〕 光纖陣列光源所包含之各GaN系半導體雷射係可爲連續驅 動也可爲脈波驅動。依脈波驅動的雷射光來曝光係可防止熱 擴散，成爲可高速且高精細的成型。脈波寬係短者較好，1 p s e c - 2 8 - 200528754 〜lOOnsec爲較佳，lpsec〜300psec係更好。此外，GaN系半 導體雷射係難以產生稱爲COD (光學損害）之光出射端面的 破損，係具高可靠性，且可容易實現lpsec〜3 00psec的脈波 寬。 〔其他曝光方式〕 如第1 8圖所示，與上述的實施形態同樣地，以掃描器1 62 對X方向之1次掃描來將感光材料150全面作曝光也可以， 如第19( A)及19 ( B)圖所示，以掃描器162將感光材料150 往X方向掃描之後，使掃描器162在Y方向移動1步，再往X 方向執行掃描般地反覆掃描和移動，以複數回的掃描將感光 材料150的全面予以曝光也可以。此外，在本例中，掃描器162 係具備有18個曝光頭166。 一般在成型3維模型之光成型方法中，伴隨樹脂之硬化的 重合收縮、依硬化時產生之重合熱而成高溫的樹脂係在常溫 被冷卻而產生依熱應變所造成之硬化收縮，伴隨著此等硬化 之收縮，係具有成型物熱應變、成型精度降低之問題。特別 是，在將包含複數個畫素的區域作同時曝光（面曝光）以成 型成平板狀之場合，成型物係相對於積層方向以凸狀朝下側 翹曲。爲了防止依此種硬化收縮之應變的發生，係將曝光區 域分成複數個區域再加以依序曝光者係較佳。 例如，把光硬化性樹脂之同一液面作複數次掃描，在第1次 的掃描，在曝光成型形狀的輪郭線且使光硬化性樹脂硬化之 後，在第2次以後的掃描，曝光輪郭線的內部且使光硬化性 樹脂硬化，依此、應變的發生係被防止。 - 29- 200528754 又，如第30 ( A )圖所示，把曝光區域分割成多數個畫素， 將此多數個畫素區分成，由相互不鄰接的畫素1〇2所構成之 第1群，和由相互不鄰接的畫素104所構成之第2群等2群， 在對各群作掃描曝光也可以。畫素102和畫素104係構成黑 白相間圖案般地交互配列著。在第3 0_( A >'圖係表示曝光區 域的一部分，但是在使用具備有例如1〇〇萬畫素的DMD之曝 光頭的場合，可因應DMD的畫素數把曝光區域分割成100萬 個畫素。 首先，在第1次的掃描，如第30(B)圖所不，曝光屬第1 群的畫素102,在第2次的掃描，如第30(C)圖所示，曝光 屬第2群之畫素104。藉此，畫素和畫素之間隙被掩埋，光硬 化性樹脂之液面的曝光區域全面被曝光。 在第1次的掃描、同時被曝光的第1群之畫素彼此相互不 鄰接，在第2次的掃描、同時被曝光的第2群之畫素彼此也 相互不鄰接。如此鄰接的畫素因爲沒有被同時曝光，所以依 硬化收縮的應變係不傳至鄰接的畫素。亦即，把曝光區域全 體予以同時曝光時，依硬化收縮的應變係伴隨著傳播曝光區 域而變大，雖然會產生相當的應變，但是在此例中，硬化收 縮係僅在1畫素的範圍產生，依硬化收縮的應變不傳至鄰接 的畫素。藉此，在積層成型物中之應變的產生係顯著被抑制， 成爲可高精度的成型。 上述之實施形態的曝光裝置中，藉由掃描器之1次的掃 描可將光硬化性樹脂的液面以任意的圖案曝光。因此，依複 數次的掃描所分割之各區域曝光係比較容易。 200528754 〔光硬化性樹脂〕 以在光成型所使用之液狀的光硬化性樹脂而言，一般係使 用依光自由基聚合反應而硬化之聚胺甲酸酯系樹脂、或依光 陽離子聚合反應而硬化之環氧樹脂系樹脂。又，可使用在常 溫爲凝膠狀態、當受雷射照射而被賦予熱能時則轉移成溶膠 狀態之溶膠-凝膠變換型的光硬化性樹脂。在使用溶膠-凝膠 變換型的光硬化性樹脂之光成型方法中，因爲係在凝膠狀而 非液狀狀態的成型面執行曝光、硬化，所以成型物係形成在 凝膠狀的樹脂中，因此具有不需用以支持成型物的支撐部分 或連結部分之優點。 在對指定區域執行同時曝光的線曝光、區域曝光之場合， 對上述之溶膠-凝膠變換型的光硬化性樹脂使用添加有熱傳 導性之樹脂係較佳。藉由添加熱傳導性之塡充劑，熱擴散性 係被發揮，在成型物中之熱應變的發生被防止。特別是，在溶 膠-凝膠變換型之光硬化性樹脂中，與通常的樹脂不同、可在 不使塡充劑沈降之情形下均一地分散，所以可維持熱擴散 性。 〔其他雷射裝置（光源）〕 上述的實施形態中，係針對使用具備有複數個合波雷射光 源的光纖陣列光源之例子加以說明，但是雷射裝置並不局限 在把合波雷射光源予以陣列化的光纖陣列光源。例如，可使 用把具備1條用以出射由具有1個發光點的單一半導體雷射 所入射之雷射光之光纖的光纖光源被陣列化的光纖陣列光 線。但是更好爲焦點深度被取深之合波雷射光源。 200528754 又，以具備有複數個發光點之光源而言，例如，如第2〇圖所 示，可使用在熱塊1 00上配列有複數個（例如7個）晶片狀 之半導體雷射LD 1〜LD7的雷射陣列。又，如第2 1 ( A )圖所 示，在指定方向配列有複數（例如，5個）個發光點ll〇a之 晶片狀的多腔雷射1 1 0係爲人所知悉。多腔雷射1 1 〇與配列 晶片狀的半導體雷射相較下，係可高精度地配列發光點，可容 易地把各發光點所出射的雷射光束予以合波。但是，發光點 變多則於雷射製造時在多腔雷射110變得容易產生變形，所 以發光點1 1 0 a之個數係設定爲5個以下較佳。 本發明之曝光頭中，可將此多腔雷射110或如第21(B) 圖所示，在熱塊100上與各晶片之發光點1 10a之配列方向相 同方向上配列有複數個多腔雷射110之多腔雷射陣列作爲雷 射裝置（光源）來使用。 又，合波雷射光源並不被限定於用以把由複數個晶片狀之 半導體雷射所出射的雷射光予以合波者。例如，如第22圖所 示，可使用具備有複數（例如，3個）個發光點110a之晶片 狀的多腔雷射1 1 0之合波雷射光源。此合波雷射光源係構成 爲具備有多腔雷射110、1條多模光纖130、以及集光透鏡 120。多腔雷射110係例如可以振盪波長爲405nm的GaN系 雷射二極體來構成。 上述的構成中，由多腔雷射110之複數個發光點110a所出 射的雷射光束B係各自由集光透鏡1 20所集光而入射於多模 光纖1 3 0的核心1 3 0 a。入射到核心1 3 0 a的雷射光係在光纖 內傳送且合波爲1條而出射。 -32- 200528754 在與上述多模光纖130之核心直徑略等寬度內並設多腔雷 射110之複數個發光點110a，同時作爲集光透鏡120,係使用 與多模光纖1 3 0之核心直徑略等焦點距離之凸透鏡或來自多 腔雷射1 1 0之出射光束僅在垂直其活性層之面內准直的杆式 透鏡，藉此可提升雷射光束B對多模光纖1 30的結合效率。 又，如第23圖所示，可使用具備有複數（例如，3個）個發 光點之多腔雷射Π 0、在熱塊1 1 1上具備有以等間隔配列複 數（例如，9個）個多腔雷射1 1 0之雷射陣列1 40的合波雷 射光源。複數個多腔雷射1 1 0係配列在與各晶片之發光點 110a的配列方向相同方向而固定。 第23圖所示之合波雷射光源係具備有：雷射陣列140 ; 對應各多腔雷射110而配置之複數個透鏡陣列114;配置在 雷射陣列140與複數個透鏡陣列114之間的1條杆式透鏡 113 ; 1條多模光纖130 ;以及集光透鏡120。透鏡陣列114 係具備有對應多腔雷射110之發光點的複數個微透鏡。 此合波雷射光源係具備有：雷射陣列1 40 ;對應各多腔雷 射1 1 0而配置之複數個透鏡陣列1 1 4 ;配置在雷射陣列1 40 與複數個透鏡陣列1 1 4之間的1條杆式透鏡1 1 3 ; 1條多模 光纖130 ;以及集光透鏡120。透鏡陣列114係具備有對應 多腔雷射110之發光點的複數個微透鏡。 上述的構成中，複數多腔雷射110之複數個發光點10a之 各自出射的雷射光束B，係各自依杆式透鏡113而被集光在 指定方向之後，藉透鏡陣列1 1 4之各微透鏡而平行光化。 被平行光化的雷射光束L係由集光透鏡120集光而入射至多 200528754 模光纖1 3 0的核心1 3 0 a。入射至核心1 3 0 a的雷射光係在光 纖內傳p、合波成1條而出射。 接著要介紹其他合波雷射光源的例子。此合波雷射光源係 如第24 ( A)及24 ( B)圖所示，在略矩形狀之熱塊180上搭 載有光軸方向的斷面爲L字狀的熱塊182,在2個熱塊間形 成有收納空間。在L字狀的熱塊1 82上面，以陣列狀配列 有複數個發光點（例如，5個）的複數（例如，2個）多腔雷 射1 1 0係在與各晶片之發光點1 1 0 a的配列方向相同方向以 等間隔配列而固定。 略矩形狀的熱塊180形成有凹部，在熱塊180的空間側上 面，以陣列狀配列有複數個發光點（例如，5個）複數（例 如，2個）之多腔雷射110,係其發光點被配置成位在與配置 在熱塊1 82之上面的雷射晶片之發光點相同的鉛直面上。 多腔雷射1 1 0之雷射光出射側係配置有，因應各晶片的發 光點110a而配列有准直透鏡之准直透鏡陣列184。准直透 鏡陣列1 84，係各准直透鏡之長度方向和和雷射光束之視角 爲大的方向（速軸方向）一致，而各准直透鏡之寬度方向和 視角爲小的方向（遲軸方向）一致般地配置。如此，藉由 將准直透鏡陣列化而成一體化，雷射光之空間利用效率係提 升而可謀求合波雷射光源之高輸出化，同時可使零件數減少 且低成本化。 又，准直透鏡陣列1 84之雷射光出射側係配置有，1條多模 光纖1 3 0、以及把雷射光束集光至此多模光纖1 3 0的入射端 且結合的集光透鏡120。 200528754 上述的構成中，配置在雷射塊180、182上之複數多腔雷射 1 1 0之複數個發光點1 0 a所各自出射的雷射光束B係各自被 准直透鏡陣列184所平行光化，依集光透鏡120而被集光以 入射至多模光纖130之核心130a。入射至核心130a之雷射 光係在光纖內傳送且被合波成1條而出射。 此合波雷射光源係如同上述，藉由多腔雷射之多段配置 和准直透鏡之陣列化，特別可圖謀高輸出化。藉由使用此合 波雷射光源，因爲可構成高亮度之光纖陣列光源或束光纖光 源，所以特別適合作爲構成本發明之曝光裝置的雷射光源之 光纖光源。 此外，把上述之各合波雷射光源收納至罩內，可構成把多模 光纖1 3 0之出射端部由其罩引出的雷射模組。 又，在上述實施形態中，已說明了在合波雷射光源之多模 光纖的出射端，與核心直徑爲與多模光纖相同且包層直徑爲 較多模光纖還小之其他光纖結合，以圖謀光纖陣列光源之高 亮度化的例子，例如把包層直徑爲1 2 5 // m、8 0 /z m、6 0 // m等 之多模光纖30在出射端不結合其他光纖之下來使用也可 〔光量分布補正光學系統〕 上述的實施形態中，係在曝光頭使用由1對組合透鏡所構 成之光量分布補正光學系統。此光量分布補正光學系統係使 在各出射位置的光束寬度變化，以使周邊部對接近光軸之中 心部的光束寬度之比與入射側相較下，係出射側的會變小，當 來自光源之平行光束對DMD照射時，在被照射面之光量分布 - 35- 200528754 係成爲略均一般地作補正。以下，針對此光量分布補正光學 系統的作用加以說明。 首先，如第25(A)圖所示，以入射光束及出射光束在其全 體之光束寬度（全光束寬度）HO、H1爲相同之場合加以說 明。此外，在第2 5 ( A )圖中，以符號5 1、5 2所示的部分係 表示假設爲光量分布補正光學系統中之入射面及出射面者。 在光量分布補正光學系統中，設定入射至接近光軸Z1的中 心部之光束與入射至周邊部之光束之各自的光束寬度h0、hi 爲相同（h0 = h 1 )。光量分布補正光學系統，對在入射側爲同 一光束寬度h0、hi的光，有關中心部的入射光束，係放大其 光束寬度hO，反之，對周邊部之入射光束，係施加使其光束寬 度縮小的作用。亦即，有關中心部之出射光束的寬度h 1 0和 周邊部之出射光束的寬度hll,係成爲hllChlO。若以光束 寬度的比率來表示，則周邊部對在出射側之中心部的光束寬 度比[h Π / h 1 0 ]與在入射側之比（h 1 / hO = 1 )相較下係變小 (hi 1/hlO ) < 1 )。 如此，藉由使光束寬度變化，可將通常光量分布變大之中 央部的光束往光量不足的周邊部產生，整體而言、在不降低 光的利用效率下，被照射面之光量分布係被略均一化。均一 化的程度係例如，在有效區域內之亮斑爲3 0 %以內，較好爲 設定成20%以內。 依此種光量分布補正光學系統之作用、效果也與在入射側 和出射側改變全體的光束寬度之場合（第25 ( B)、25 ( C)) 200528754 第2 β广圖係表示把入射側之全體光束寬度Η0縮小成 寬度Η2加以出射的場合（HO > Η2 )。在此種場合，光量分布 補正光學系統係，在入射側爲同一光束寬度h0、h 1的光，於 出射側，中央部的光束寬度h 1 0係變得比周邊部還大，反之， 周邊部之光束寬度h 11係變得比中心部還小。若以光束的縮 小率來考量，則施予把對中心部的入射光束之縮小率設定爲 較周邊部小，而把對周邊部之入射光束的縮小率設定爲較中 心部大的作用。在此場合，周邊部的光束寬度對中心部的光 束寬度之比「Η 1 1 / Η 1 0」係與在入射側的比（h 1 / h0二1 )相 較下變小（（h 11 / h 1 0 ) < 1 )。 第25 ( C)圖係表示把入射側之全體的光束寬度HO放大 成寬度H3加以出射的場合（HO < H3 )。即使在此種場合，光 量分布補正光學系統係設定成，把入射側爲同一光束寬hO、 h 1的光，於出射側，中央部的光束寬度h 1 0係與在周邊部相 較下變大，反之，周邊部的光束寬度hll與在中心部相較下係 變小。若以光束的放大率加以考量，與周邊部相較下係把對 中心部的入射光束之放大率設大，施予把對周邊部的入射光 束之放大率設爲較在中心部爲小的作用。在此場合，對中心 部之光束寬度的周邊部之光束寬度比「hll/hlO」，係與在入 射側的比（h 1 / hO = 1 )相較下變小（（h 1 1 / h 1 0 ) < 1 )。 如此，光量分布補正光學系統係使在各出射位置的光束寬 度變化，因爲把周邊部的光束寬度相對於接近光軸Z 1之中心 部的光束寬度之比設定爲，與入射側相較下，出射側係變小， 所以在入射側爲同一光束寬度的光，於出射側，中央部的光 - 37 - 200528754 束寬度係變得比周邊部還大，周邊部的光束寬度係變得比中 心部還小。藉此，可將中央部的光束往周邊部產生，在光學系 統全體之光利用效率不降低之下，可形成光量分布被略均一 化之光束斷面。 以下，表示作爲光量分布補正光學系統來使用之成對的組 合透鏡之具體的透鏡資料的1例。在此例中，如同光源爲雷 射陣列光源之場合一般，表示在出射光束的斷面之光量分布 爲高斯分布時之透鏡資料。此外，在單模光纖的入射端連接 有1個半導體雷射的場合，來自光纖的射出光束之光量分布 係成爲高斯分布。本實施形態也可適用在此種場合。又，藉 由把多模光纖的核心直徑設小以接近單模光纖的構成等，則 接近光軸之中心部的光量係也可適用在比周邊部的光量還大 的場合。 下列表1係表示基本透鏡資料。 【表1】 基本透鏡資料 Si r i di Ni (面編號） (曲率半徑） (面間隔） (折射率） 01 非球面 5.000 1.5281 1 02 〇〇 50.000 03 〇〇 7.000 1.52811 04 非球面 由表1可知，成對的組合透鏡係由旋轉對稱之2個非球面 透鏡所構成。將配置在光入射側之第1透鏡的光入射側的面 設爲第1面、光出射側的面設爲第2面，第1面係非球面形 200528754 狀。又，配置在光出射側之第2透鏡的光入射側之面設爲第 、 3面、光出射側之面設爲第4面，第4面係非球面形狀。 表1中，面編號Si係表示第i(i二1〜4)面之編號，曲率 半徑r i係表示第i面的曲率半徑，面間隔d i係表示第i面 和第i + 1面之光軸上的面間隔。面間隔d i値的單位爲毫米 (1 mm )。折射率N i係表示相對於具備有第i面之光學要素 的波長405nm之折射率的値。 下列表2係表示第1面及第4面的非球面資料。 • 【表2】 非球面資料 第1面 第4面 C —1 . 4098E— 02 一 9 · 8506E— 03 K 一 4 . 2192E+ 00 —3 · 625 3E+ 01 a 3 一 1 ·0027E- 04 一 8 · 99 80E- 05 a 4 3 · 059 1 E- 05 2.3060E- 05 a 5 一 4.5115E- 07 —2 . 2860E— 06 a 6 —8 · 2819E— 09 8 · 766 1 E— 08 a7 4 · 1 020E- 12 4.4028E — 10 a8 1.223 1 - 1 3 1·3624E- 12 a9 5 · 3 7 5 3E- 16 3 . 396 5E— 1 5 a 1 0 1 · 6315E- 18 7 . 4823E- 18 上述之非球面資料係以表示非球面形狀之下式（A )中的 係數所表示。 - 39 一 200528754 〔數式1〕 r ίο 。（A) I = — C'p ·ρι l + 7l-/C(C ·Ρ)2 /=3 上述式（A )中之各係數係定義如下。 Z :由位在距離光軸高度p之位置的非球面上之點降至非球面 之頂點的接平面（垂直於光軸的平面）之垂線的長度（mm ) p :距離光軸之距離（mm) K :圓錐係數 C:近軸曲率（1/r、r:近軸曲率半徑） a i :第i次（i = 3〜1 0 )之非球面係數 在表2所示的數値中，記號”E”係表示接在其後之數値爲應 以10爲底的指數，其以10爲底之指數函數所表示的數値係 表示被乘於”E”之前的數値。例如，以「1 . 0E — 02」爲例，係 表示「1 . 〇χ 10·2」。 第27圖係表示藉由上述表1及表2所示之成對的組合透 鏡可得之照明光的光量分布。橫軸係表示距離光軸之座標， 軸表示光量比（％ )。此外，爲了作比較，係以第2 6圖表示 未執行補正時之照明光的光量分布（高斯分布）。由第26圖 及苐27圖可知，藉由以光量分布補正光學系統執行補正， 與不執行補正的場合相較下，係可獲得被略均一化之光景分 布。藉此，在曝光頭中之光利用效率不降低之下，可以均一的 雷射光執行無斑的曝光。此外，也可使用一般常用之杆式積 分儀或複眼透鏡等。 〔其他的成像光學系統〕 一 40 - 200528754 上述的實施形態中，雖然在曝光頭所使用之DMD的光反 射側設置了作爲成像光學系統之2組透鏡，但也可配置將雷 射光放大而成像之成像光學系統。藉由放大由DMD所反射之 光束線的斷面積，可將在被曝光面中之曝光區域面積（畫像 區域）放大成所期望之大小。 例如，曝光頭可由如第31( A)圖所示構成：對DMD5 0，DMD5 0 照射雷射光之照明裝置144;把在DMD50反射之雷射光予以 放大而成像之透鏡系454,458;對應DMD50之各畫素而配置 有多數微透鏡474之微透鏡陣列472;對應微透鏡陣列472 之各微透鏡而配置有多數光圈478之光圏陣列476;以及使 通過光圏之雷射光成像於被曝光面56之透鏡系480,482。 以此曝光頭而言，由照明裝置144照射雷射光時，由DMD50 在開啓方向所反射之光束線的斷面積係經由透鏡系454、458 而被放大數倍（例如，2倍）。被放大的雷射光係由微透鏡陣 列472的各微透鏡而對應DMD50之各畫素被集光，通過光圈 陣列476之對應的光圈。通過光圈之雷射光係經由透鏡系 480、482而成像於被曝光面56上。 在此成像光學系統中，由DMD5 0所反射之雷射光係經由放 大透鏡454、458被放大數倍而投影至被曝光面56,所以全 體的畫像區域變廣。此時，若未配置有微透鏡陣列472及光 圏陣列4 7 6，則如第3 1 ( B )圖所示，投影至被曝光面5 6之各 光束光點BS之1畫素尺寸（光點尺寸）係因應曝光區域468 的尺寸而成爲大者，表示曝光區域468之鮮銳度的MTF(光學 傳遞函數）特性會降低。 200528754 一方面，在配置有微透鏡陣列472及光圏陣列476之場合， 由DMD50所反射之雷射光係依微透鏡陣列472的各微透鏡， 對應DMD5 0之各畫素而被集光。藉此，如第31 (C)圖所示， 即使是在曝光區域被放大的場合，也可把各光束光點BS的光 點尺寸縮小成所期望之大小（例如，1 0 // m κ 1 0 e m )，可防止 MTF特性之降低以執行高精細的曝光。此外，曝光區域468 之所以傾斜係，爲了使畫素間沒有間隙而將DMD50傾斜地配 置所致。 又，即使依微透鏡之像差的光束爲寬，也可利用光圈使被曝 光面56上之光點尺寸成爲一定大小般地將光束整形，同時藉 由使其通過對應各畫素所設置的光圈，可防止在鄰接之畫素 間的串音。 更者，藉由在照明裝置144上使用與上述實施形態同 樣的高亮度光源，因爲由透鏡458入射至微透鏡陣列472的 各微透鏡之光束角度變小，所以可防止鄰接的畫素之光束的 一部分之入射。亦即，可實現高消光比。 【發明之效果】 本發明之光成型裝置係可獲得能執行高速成型之效果。 又、在光源上使用高輝度光源之場合，可獲得能執行高精密 成型之效果。 【圖式簡單說明】 第1圖係表示在第1實施形態之光成型裝置的外觀斜視圖。 第2圖係表示在第1實施形態之光成型裝置的掃描器之構 成斜視圖。 - 4 2 - 200528754 第3(A)圖係表示形成在液面之已曝光的區域之平面圖，第 3 ( B)圖係表示各曝光頭的曝光區域之配列圖。 第4圖係表示在第1實施形態之光成型裝置的曝光頭之槪 略構成斜視圖。 第5 ( A )圖係沿著第4圖所示之曝光頭之構成的光軸之副 掃描方向的斷面圖，第5(B)圖係表示第5(A)圖所示之側面 圖。 第6圖係表示數位微鏡裝置（DMD )的構成之部分放大圖。 第7(A)及7(B)圖係用以說明DMD的動作之說明圖。 第8(A)、8(B)圖係表示DMD不傾斜配置時及作傾斜配置 時曝光束的配置及掃描線作比較之平面圖，第8(B)圖係表示 DMD曝光束的配置及掃描線之平面圖。 第9 ( A )圖係表示光纖陣列光源的構成之斜視圖，第9 ( B )圖 係第9(A)圖之部分放大圖，第9(C)、9(D)圖係表示在雷射出 射部中之發光點的配列平面圖。 第10圖係表示多模光纖的構成圖。 第11圖係表示合波雷射光源的構成之平面圖。 第1 2圖係表示雷射模組的構成之平面圖。 第1 3圖係表示第1 2圖所示之雷射模組的構成之側面圖。 第1 4圖係表示第1 2圖所示之雷射模組的構成之部分側面 圖。 第1 5 ( A )、1 5 ( B )圖係表示沿著以往的曝光裝置中之焦點 深度的光軸與第1實施形態之光成型裝置中之焦點深度的 差異光軸之斷面圖。 - 4 3 - 200528754 第16(A)、16(B)圖係表示DMD之使用區域的1例圖。 第17(A)圖係DMD之使用區域爲適合之場合的側面圖，第 1 7 ( B )圖係沿著第1 7 ( A )圖之光軸的副掃描方向之斷面圖。 第1 8圖係用以說明以掃描器的1次掃描來使光硬化性樹 脂之液面全面曝光之曝光方式的平面圖。 第19(A)及19(B)圖係用以說明以掃描器的複數次掃描來 使光硬化性樹脂之液面全面曝光之曝光方式的平面圖。 第20圖係表示雷射陣列的構成之斜視圖。 第2 1 ( A )圖係表示多腔雷射的構成之斜視圖，第2 1 ( B )圖係 將第2 1 ( A )圖所示之多腔雷射予以陣列配列的多腔雷射陣列 之斜視圖。 第22圖係表示合波雷射光源之其他構成的平面圖。 第23圖係表示合波雷射光源之其他構成的平面圖。 第24(A)圖係表示合波雷射光源之其他構成之平面圖，第 24B圖係沿著第24(A)圖之光軸的斷面圖。 第25(A)、（B)、（C)圖係由光量分布補正光學系統的補正 之槪念說明圖。 第26圖係表示光源爲高斯分布且不執行光量分布補正時 之光量分布圖表。 第27圖係表示由光量分布補正光學系統補正後之光量分 布圖表。 第28圖係以往的雷射掃描方式之積層成型裝置的構成之 斜視。 第29圖係表示以往的可動鏡方式之積層成型裝置的構成 -44- 200528754 之斜視圖。 第30(A)圖係表示曝光區域之曝光圖案的1例之平面圖， 第30(B)圖係表不將第30(A)圖之第1群的畫素曝光後之狀 態的斜視圖，第30(C)圖係表示將第30(A)圖之第2群的畫素 曝光後之狀態的斜視圖。 第3 1 ( A )圖係表示沿著結合光學系統之其他不同的曝光頭 的構成之光軸的斷面圖，第30(B)圖係表示在不使用微透鏡 陣列等之場合時、投影至被曝光面之光像的平面圖。第3 0 ( C ) 圖係表示在使用有微透鏡陣列等之場合時、投影至被曝光面 之光像的平面圖。 【主要元件符號說明】 10 · • · · •熱塊 1 1〜 17 · · •准直透鏡 20 · • · · •集光透鏡 30 · • · · •多模光纖 50 · • · · •數位微鏡裝置（DMD ) 53 · • · · •曝光束 54、 58 ^ · •透鏡系 56 · • · · •掃描面（被曝光面） 64 · • · · •雷射模組 66 · • · · •光纖陣列光源 68 · ♦ · · •雷射出射部 73 · • · · •組合透鏡 150 - » ••鲁 •感光材料 200528754 152.....載物台 15 6.....設置台 158.....導引部 16 2.....掃描器 16 6.....曝光頭 168.....曝光區域 170 · •已曝光區域All GaN-based semiconductor lasers LD1 to LD7 have the same oscillation edge wavelength (example * < 40 511111), the maximum output is also all common (for example, multi-mode laser is! 00mw, single-mode laser is 30mW). In addition, in the case of GaN-based semiconductor lasers LD1 to LD7, lasers having an oscillation wavelength other than the above-mentioned 200528754 4 0 5 nm can be used in a wavelength range of 3 50 nm to 450 nm. The above-mentioned multiplexed laser light source is housed in a box-shaped package 40 with an opening above, as shown in Figs. 12 and 13 together with other optical elements. The package 40 is provided with a package cover 41 which is formed like closing its opening. After the degassing process, a sealing gas is introduced. The opening of the package 40 is closed by the package cover 41, and the package 40 and the package cover 41 are closed. In the formed closed space (sealed space), the above-mentioned combined laser light source is hermetically sealed. A substrate 42 is fixed to the bottom surface of the package 40, and the upper surface of the substrate 42 is mounted with: the thermal block 10; a light collecting lens holder holding the light collecting lens 20; and an incident end portion for holding the multimode optical fiber 30之 iber holder 46. The exit end of the multimode optical fiber 30 is led out of the package through an opening formed in the wall surface of the package 40. A collimating lens holder 44 is attached to the side surface of the heat block 10, and the collimating lenses 11 to 17 are held. An opening is formed in the lateral wall surface of the package 40. Through this opening, a wiring 47 for supplying a driving current to the GaN-based semiconductor lasers LD1 to LD7 is led out of the package. In addition, in FIG. 13, in order to avoid complication of the drawing, the GaN-based semiconductor laser LD7 is numbered only among the plurality of GaN-based semiconductor lasers, and only the collimation lens is provided with collimation. Lenses 17 are numbered. Fig. 14 shows the front shape of the mounting portions of the collimating lenses 11 to 17 described above. The collimating lenses 11 to 17 are each formed so as to slenderly cut a region including an optical axis of a circular lens having an aspherical surface in a parallel plane. This elongated collimating lens can be formed, for example, by molding a resin or an optical glass. The collimating lenses 11 to 17 are arranged in close proximity to the light emitting points in a direction orthogonal to the alignment direction of the light emitting points (left and right directions in Fig. 14) of GaN-based semiconductor mines -20-200528754 to LD1 to LD7. The alignment direction. On the one hand, in the case of GaN-based semiconductor lasers LD1 to LD7, an active layer having an emission width of 2 vm is used, and the viewing angles of the directions parallel to the active layer and at right angles are, for example, 10 ° and 30 °. Lasers emitting laser beams B1 to B7. These GaN-based semiconductor lasers LD1 to LD7 are arranged in a row in a row in a direction parallel to the active layer. Therefore, as described above, the laser beams B1 to B7 emitted from the respective light emitting points are aligned with the longitudinal direction of the elongated collimator lenses 1 1 to 1 7 as long as the viewing angle is the same. The direction in which the angle is small is incident in a state that coincides with the width direction (the direction orthogonal to the length direction). That is, each of the collimating lenses 11 to 17 has a width of 1.1 mm and a length of 4.6 mm, and the laser beams B1 to B7 incident on the horizontal and vertical beam diameters are 0.9 mm and 2.6 mm, respectively. In addition, the collimating lenses 11 to 17 each have a focal length f f = 3 mm, NA = 0.6, and a lens arrangement pitch = 1.25 mm. The light-collecting lens 20 is a slender area where the optical axis of a circular lens having an aspherical surface is cut in a parallel plane, and the alignment directions of the collimating lenses 1 1 to 17 are formed to be long in the horizontal direction. And is short in the direction perpendicular to it. The focusing lens 20 has a focal distance f2 = 23 mm and NA = 0.2. This collecting lens 20 is also formed by, for example, molding a resin or an optical glass. [Operation of Photoforming Device] The operation of the photoforming device will be described below. In each of the exposure heads 166 of the scanner 162, the laser beams B1, B2, B3, and B1, B2, B3, and E2 emitted from the GaN-based semiconductor lasers LD1 to LD7 of the 200528754 combined laser light source constituting the fiber array light source 66 are emitted in a divergent light state. B4, B5, B6, and B7 are each parallelized by the corresponding collimating lenses 1 1 to 17. The collimated laser beams B1 to B7 'are collected by the light collecting lens 20 and converged to the incident end face of the core 30a of the multimode optical fiber 30. In this example, a collimating optical system is constituted by the collimating lenses 11 to 17 and a collecting lens 20, and a multiplexing optical system is constituted by the condensing optical system and the multimode optical fiber 30. That is, the collected laser beams B1 to B7, which are collected as described above, are incident on the core 30a of the multimode optical fiber 30 for transmission in the optical fiber, and are multiplexed into one laser beam B. The light is emitted from the optical fiber 31 bonded to the exit end of the multimode optical fiber 30. In each laser module, when the combining efficiency of the laser beams B1 to B7 to the multimode fiber 30 is 0.85, and each output of the GaN-based semiconductor laser LD1 to LD7 is 30mW, the fibers are arranged in an array. The 31 series can obtain a combined laser beam B with an output of about 180mW (= 30Mw X 0.85X7). Therefore, the output of the laser emitting section 68 in which six optical fibers 31 are arranged in an array is about 1W (= 180mWX 6). The laser emitting portions 68 of the optical fiber array light source 66 are arranged in a row along the main scanning direction with such high-brightness light emitting points. The conventional optical fiber light source that combines laser light from a single semiconductor laser to one optical fiber has a low output, so if a large number of rows are not arranged, the desired output cannot be obtained, but the multiplexed laser used in this embodiment The light source has a high output, so a small number of columns, for example, one column can obtain the desired output. For example, in the conventional optical fiber light source that combines semiconductor laser and optical fiber in a one-to-one manner, in general, for semiconductor lasers, lasers with an output of about 30mW (millimeter 200528754 watts) are used. For optical fibers, Because multi-mode optical fibers with a core diameter of 50 mm and a cladding diameter of 1 2 5 A in and Ν (openings) 0 · 2 are used, if an output of about 1 W (watt) is required, the multi-mode optical fiber must be 48 (8X6) bundles, the area of the light emitting area is 0.62mm2 (0.675mmX.925mm), so the brightness of the laser emitting section 68 is 1.6X106 (W / m2), and the brightness of each fiber is 3.2X106 (W / m2). In contrast, in this embodiment, as described above, the output of 1 IV can be obtained with the multi-mode optical fiber 6 treaty. The area of the light emitting area in the laser emitting section 68 is 0.0081 mm2 (0.325 mm × 0.025 mm), so the laser emitting The brightness of the part 68 is 1 2 3 X 1 06 (W / m2), which is about 80 times higher than the conventional scheme. In addition, the brightness of each optical fiber is 90 X 1 06 (W / m2), which is about 28 times higher than that in the past. Here, with reference to Figs. 15 (A) and 15 (B), the difference in depth of focus between the conventional exposure head and the exposure head of this embodiment will be described. The diameter in the sub-scanning direction of the light-emitting area of the conventional beam head optical fiber light source of the exposure head is 0.65 mm, and the diameter in the sub-scanning direction of the light-emitting area of the fiber array light source of the exposure head of this embodiment is 0.025 mm. As shown in FIG. 15A, in the conventional exposure head, the light emitting area of the light source (bundled optical fiber light source) 1 is large, so the angle of the light beam incident on the DMD 3 becomes large. As a result, the amount of light beam incident on the scanning surface 5 is large. The angle becomes larger. For this reason, the beam diameter tends to be too wide with respect to the light collection direction (deviation of the focus direction). On the other hand, as shown in FIG. 15 (B), in the exposure head of this embodiment, the diameter in the sub-scanning direction of the light-emitting area of the fiber array light source 66 is small, so the light beam incident on the DMD 50 through the lens system 67 As the angle becomes smaller, as a result, the angle of the light beam incident on the scanning surface 5 6 of the scanning surface 200528754 becomes smaller. That is, the depth of focus becomes deeper. In this example, the diameter in the sub-scanning direction of the light-emitting area is about 30 times that of the conventional one, and a depth of focus equivalent to a slightly wound boundary can be obtained. Therefore, it is suitable for exposure of small light spots. The effect of this depth of focus is that the larger the amount of light necessary for the exposure head, the more significant and effective it becomes. In this example, the size of one pixel projected on the exposure surface is 10 m X 1 0 / z m. In addition, the DMD is a reflective spatial modulation element, as shown in Figs. 15 (A) and 15 (B), which are developed views for explaining the relationship between the optical aspects. The image data of the exposure pattern corresponding to one layer is input to the controller (not shown) connected to the DMD50, and the frame temporarily stored in the controller is recorded in billions. This image data is the data representing the density of each pixel constituting the image in binary (the presence or absence of point records). The scanner 162 is moved at a constant speed from the upstream side to the downstream side in the sub-scanning direction along the guide portion 158 by a driving device (not shown). When the scanner 1 62 starts to move, the image data stored in the frame memory are sequentially read out, and then the control of each exposure head 1 66 is generated based on the image data read by the data processing unit. signal. Then, the mirror driving control unit is used to control the micromirrors of the DMD50 of each exposure head 166 to be turned on and off according to the generated control signals. When the laser light is irradiated to the DMD 50 by the fiber array light source 66, the laser light system reflected when the micromirror of the DMD 50 is on is imaged on the liquid surface of the photocurable resin 150 through the lens systems 54, 58 ( Exposed surface) 56 on. In this way, the laser light emitted by the optical fiber array light source 66 is turned on and off at each pixel, and the light-hardening resin 150 is in a pixel unit (exposure area) that is slightly the same as the number of pixels used by DMD50. 168) Hardened by exposure. -24-200528754 In addition, the scanner 162 is moved at a certain speed, and the liquid surface of the photocurable resin 1 50 is sub-scanned to form each of the exposure heads 1 6 6 band-shaped sintered areas 170 ° as described in Section 16 ( As shown in Figures A) and 16 (B), in this embodiment, in the DMD50, a micromirror array with 800 micromirrors arranged in the main scanning direction, although 600 groups are arranged in the sub-scanning direction, in this embodiment, The controller controls only a part of the micromirror columns (for example, 800 X 100 columns) to be driven. As shown in Fig. 16 (A), a micromirror array arranged at the center of the DMD50 may be used. As shown in Fig. 16 (B), a micromirror array arranged at the end of the DMD50 may be used. In the case where a defect occurs in a part of the micromirrors, a micromirror array or the like where no defect occurs is used, and the micromirror array to be used may be appropriately changed according to the situation. The data processing speed of DMD50 has its limit. The modulation speed per line is determined in proportion to the number of pixels to be used. Therefore, by using only a part of the micromirror array, the modulation speed per line is adjusted. Get faster. On the one hand, it is not necessary to use all the pixels in the sub-scanning direction when continuously exposing the exposure head to the relative moving exposure method. For example, among the 600 micromirror columns, when only 300 groups are used, compared with the case where all 600 groups are used, the modulation can be adjusted twice as fast per line. In addition, among the 600 groups of micromirror columns, when only 200 groups are used, compared with the case where all 600 groups are used, the adjustment can be made three times faster per line. That is, an area of 500 mm can be exposed in the sub-scanning direction for 17 seconds. Furthermore, when only 100 groups are used, the modulation can be changed 6 times faster per line. That is, an area of 500 mm can be exposed in the sub-scanning direction for 9 seconds. 200528754 The number of micromirror columns used by celebrities, that is, the number of micromirrors arranged in the sub-scanning direction is preferably 10 or more and 200 or less, and more preferably 10 or more and 100 or less. Since the area of each micromirror equivalent to 1 pixel is 15emXl5 / zm, if converted to the DMD50 use area, the area above 12mm X150 // m and below 12mm X 3_ is better, 12mmX 150 Areas greater than #m and less than 12mmX 1.5mm are better. If the number of micromirror rows to be used is within the above range, as shown in Figures 17 (A) and 17 (B), the laser light emitted by the fiber array light source 66 is slightly parallel to the lens system 67. Actinic to irradiate DMD50. It is preferable that the irradiation area of the laser light irradiated by the DMD50 is consistent with the use area of the DMD50. If the irradiation area is wider than the use area, the utilization efficiency of the laser light decreases. On the one hand, according to the number of micromirrors arranged in the sub-scanning direction of the lens system 67, although it is necessary to set the diameter of the sub-scanning direction of the light beam collected on the DMD50 to be small, the number of micromirror rows used is not When it is 10, the angle of the light beam incident on the DMD 50 becomes larger, and the focal depth of the light beam on the scanning surface 56 becomes shallower, which is not preferable. From the viewpoint of modulation speed, the number of micromirror rows used is preferably 200 or less. In addition, the DMD is a reflective spatial modulation element. Figures 17 (A) and 17 (B) are expanded views for explaining the optical relationship. When the hardening of one layer is completed by one sub-scan of the scanner 162, the scanner 162 is returned to the origin located on the most upstream side along the guide portion 158 by a driving device (not shown). Next, the lead screw 1 5 5 is rotated by a drive motor (not shown) to lower the lifting stage 1 52 by a predetermined amount, so that the hardened portion of the photocurable resin 1 50 sinks below the liquid surface, and the photocurable liquid is hardened. Resin 1 50 fills above the hardened portion. Then, the sub-layer image data is input to a controller (not shown) connected to-26- 200528754 DMD50, and the secondary scanning by the scanner 162 is performed again. In this manner, the exposure (hardening) by sub-scanning and the lowering of the stage are repeatedly performed, and the hardened portions are laminated to form a three-dimensional model. As described above, the optical molding device of this embodiment is equipped with DMD. The micromirror array in which 800 micromirrors are arranged in the main scanning direction is arranged in 600 sets in the sub-scanning direction. The micromirror array is controlled like a drive, so the modulation speed per line is faster than when all micromirror arrays are driven. This allows high-speed exposure and molding. In addition, the light source system used to illuminate the DMD uses a high-brightness fiber array light source in which the exit ends of the optical fibers of the multiplexed laser light source are arranged in an array, so that a high output and a deep focal depth can be obtained, Optical density output, so high-speed and high-precision molding can be performed. In addition, since the output of each optical fiber light source is increased, the number of optical fiber light sources necessary to obtain a desired output is reduced, so that it is possible to reduce the cost of the optical molding device. In particular, in this embodiment, since the cladding diameter of the outgoing end of the optical fiber is set to be smaller than the cladding diameter of the incident end, the diameter of the light emitting portion is changed to be small, and the optical fiber array light source can be designed to have higher brightness. This results in finer molding. Moreover, in the above-mentioned embodiment, although the example in which the DMD micromirror is partially driven has been described, the length in a direction corresponding to a specified direction is longer than the length in a direction crossing the specified direction. On the substrate, a slender DMD with a plurality of micromirrors that can change the angle of the reflecting surface in two dimensions is used in accordance with each control signal. Since the number of micromirrors used to control the angle of the reflecting surface is reduced, the adjustment can be accelerated. speed. -27- 200528754 The following describes the modification of the embodiment described above. [Other spatial modulation elements] In the above-mentioned embodiment, although the example in which the DMD micromirror is partially driven has been described, even if the length in the direction corresponding to the specified direction is longer than the length that crosses the specified direction On the substrate with a longer length in the direction, a long and thin DMD with a plurality of micromirrors arranged in two dimensions to change the angle of the reflecting surface is used in accordance with each control signal. Since the number of micromirrors used to control the angle of the reflecting surface is reduced, Therefore, the modulation speed can be accelerated. In the above-mentioned embodiment, although the exposure head equipped with DMD as a space modulation element has been described, for example, even when a MEMS (microelectromechanical system) type space modulation element (SLM) is used or Yura Electric is used Optical elements (PLZT elements) and liquid crystal light shutters (FLC) that modulate transmitted light based on optical effects. Even when using spatial modulation elements other than MEMS type, all pixel units arranged on the substrate, By using a part of the pixel portion, since the modulation speed per pixel and per main scanning line can be accelerated, the same effect can be obtained. In addition, the so-called MEMS is a general name for a micro-system of micro-sensors and actuators based on micromechanical technology based on IC manufacturing processes, and then integrated control circuits. The variable element means a spatial modulation element driven by an electromechanical action using an electrostatic force. [Laser driving method] Each of the GaN-based semiconductor laser systems included in the optical fiber array light source may be continuously driven or pulse-driven. The exposure system that is driven by pulsed laser light prevents thermal diffusion and enables high-speed and high-precision molding. The shorter pulse width is better, 1 p s e c-2 8-200528754 ~ 100nsec is better, lpsec ~ 300psec is better. In addition, GaN-based semiconductor laser systems are less likely to cause damage to the light exit end face called COD (optical damage), have high reliability, and can easily achieve pulse widths from lpsec to 300 psec. [Other exposure methods] As shown in FIG. 18, similar to the above embodiment, the scanner 1 62 can scan the X direction to expose the photosensitive material 150 in its entirety, as shown in FIG. 19 (A). As shown in Figure 19 and (B), after scanning the photosensitive material 150 in the X direction with the scanner 162, the scanner 162 is moved one step in the Y direction, and then repeatedly scanned and moved like a scan in the X direction. The scanning may expose the entire surface of the photosensitive material 150. In addition, in this example, the scanner 162 is provided with 18 exposure heads 166. Generally, in the light molding method for molding a three-dimensional model, a high-temperature resin system that is caused by the superposition shrinkage of the resin during hardening and the superposition heat generated during hardening is cooled at room temperature to produce a hardening contraction caused by thermal strain. These hardened shrinkages have problems such as thermal strain of the molded article and reduced molding accuracy. In particular, when a region including a plurality of pixels is simultaneously exposed (surface-exposed) to form a flat plate shape, the molded product is warped downward in a convex shape with respect to the lamination direction. In order to prevent the occurrence of such strain due to hardening and shrinkage, it is preferable to divide the exposure area into a plurality of areas and then sequentially expose them. For example, the same liquid surface of the photocurable resin is scanned a plurality of times. In the first scan, the shaped wheel line is exposed and the photocurable resin is hardened. In the second and subsequent scans, the wheel line is exposed. The photo-curable resin is hardened inside, so that the occurrence of strain is prevented. -29- 200528754 As shown in Fig. 30 (A), the exposure area is divided into a plurality of pixels, and the plurality of pixels are divided into the first pixel composed of pixels 10 that are not adjacent to each other. Two groups, such as a group and a second group composed of pixels 104 that are not adjacent to each other, may be scanned and exposed for each group. Pixels 102 and 104 are arranged in a black and white pattern. In the 3 0_ (A > 'picture shows a part of the exposure area, but when using an exposure head equipped with a DMD of 1 million pixels, for example, the exposure area can be divided into 100 according to the number of pixels of the DMD. Thousand pixels. First, at the first scan, as shown in Figure 30 (B), the pixels 102 belonging to the first group are exposed, and at the second scan, as shown in Figure 30 (C). , The exposure belongs to the second group of pixels 104. By this, the gap between the pixels and pixels is buried, and the exposed area of the liquid-curing resin liquid surface is fully exposed. In the first scan, the first exposed at the same time The pixels of the first group are not adjacent to each other, and the pixels of the second group that are exposed at the same time in the second scan are also not adjacent to each other. Since the adjacent pixels are not exposed at the same time, the strain due to the hardening shrinkage It is not transmitted to adjacent pixels. That is, when the entire exposed area is exposed at the same time, the strain system that shrinks due to hardening becomes larger as the exposed area spreads. Although considerable strain occurs, in this example, hardening Shrinkage occurs only in the range of 1 pixel. To adjacent pixels. As a result, the generation of strain in the laminated molding is significantly suppressed, and high-precision molding can be achieved. In the exposure apparatus of the above embodiment, one scan by the scanner can The liquid surface of the photocurable resin is exposed in an arbitrary pattern. Therefore, it is relatively easy to expose each area divided by multiple scans. 200528754 [Photocurable resin] The liquid photocurability used in photoforming As for the resin, generally, a polyurethane-based resin hardened by photoradical polymerization reaction or an epoxy-based resin hardened by photocationic polymerization reaction is used. It can also be used in a gel state at normal temperature, When heat energy is applied by laser irradiation, it is converted into a sol-gel conversion type photo-curable resin in a sol state. In the photo-molding method using a sol-gel conversion type photo-curable resin, The molding surface in the gel state is not exposed to liquid and hardened. Therefore, the molding is formed in a gel-like resin, and therefore, it does not need a supporting portion to support the molding. Advantages of the connection part. In the case of performing line exposure and area exposure for simultaneous exposure to a designated area, it is preferable to use a resin system added with thermal conductivity for the above-mentioned sol-gel conversion type photocurable resin. By adding thermal conductivity In addition, the thermal diffusivity is exerted, and the occurrence of thermal strain in the molded product is prevented. In particular, the sol-gel conversion type photocurable resin is different from ordinary resins and can be used in [Other laser devices (light sources)] In the above-mentioned embodiment, the optical fiber array provided with a plurality of multiplexed laser light sources is used to uniformly disperse the gallium charge without settling. An example of the light source is described, but the laser device is not limited to a fiber array light source in which a multiplex laser light source is arrayed. For example, a single semiconductor laser having one light emitting point and one light emitting point may be used. The optical fiber light source of the incident laser light fiber is arrayed by the optical fiber array light. But it is better for a multiplexed laser light source whose depth of focus is taken deep. 200528754 For a light source having a plurality of light emitting points, for example, as shown in FIG. 20, a semiconductor laser LD 1 in which a plurality of (eg, seven) wafers are arranged on the thermal block 100 can be used. ~ LD7 laser array. Further, as shown in FIG. 21 (A), a wafer-shaped multi-cavity laser 1 1 0 having a plurality of (for example, five) light emitting points 110a arranged in a specified direction is known. Compared with a multi-cavity laser, which is arranged in a wafer-like semiconductor laser, the light emitting points can be arranged with high accuracy, and the laser beams emitted from the light emitting points can be easily combined. However, when the number of light emitting points is increased, the multi-cavity laser 110 becomes easily deformed at the time of laser manufacturing. Therefore, it is preferable to set the number of light emitting points 1 10 a to 5 or less. In the exposure head of the present invention, as shown in FIG. 21 (B), the multi-cavity laser 110 may be arranged on the thermal block 100 in the same direction as the arrangement direction of the light emitting points 1 10a of each wafer. The multi-cavity laser array of the cavity laser 110 is used as a laser device (light source). Furthermore, the multiplexing laser light source is not limited to those for multiplexing laser light emitted from a plurality of wafer-shaped semiconductor lasers. For example, as shown in FIG. 22, a wafer-shaped multi-cavity laser 1 1 10 multiplexing laser light source having a plurality (for example, three) of light emitting points 110a can be used. This multiplexed laser light source is configured to include a multi-cavity laser 110, a multi-mode optical fiber 130, and a light collecting lens 120. The multi-cavity laser 110 can be configured by oscillating a GaN-based laser diode having a wavelength of 405 nm, for example. In the above configuration, the laser beams B emitted from the plurality of light emitting points 110 a of the multi-cavity laser 110 are each collected by the light collecting lens 120 and incident on the core 1 3 0 a of the multimode fiber 1 3 0. . The laser light incident on the core 1 3 0 a is transmitted in the optical fiber, and the combined light is emitted as one. -32- 200528754 A plurality of light emitting points 110a of the multi-cavity laser 110 are set within a width approximately equal to the core diameter of the above-mentioned multi-mode optical fiber 130, and at the same time, the light collecting lens 120 is used as the core of the multi-mode optical fiber 130 Convex lenses with a diameter of approximately equal focal distance or rod lenses from the multi-cavity laser 1 1 0 collimate only within the plane perpendicular to its active layer, thereby improving the laser beam B's effect on the multimode fiber 1 30 Combining efficiency. Further, as shown in FIG. 23, a multi-cavity laser having a plurality of (for example, three) light emitting points Π 0 can be used, and a plurality of (for example, nine) arrayed at regular intervals can be provided on the thermal block 1 1 1 ) Multiplexed laser light sources of multi-cavity laser 1 1 0 and laser array 1 40. The plurality of multi-cavity lasers 1 10 are aligned and fixed in the same direction as the alignment direction of the light emitting points 110a of each wafer. The multiplexed laser light source shown in FIG. 23 is provided with: a laser array 140; a plurality of lens arrays 114 arranged corresponding to each of the multi-cavity lasers 110; and arranged between the laser array 140 and the plurality of lens arrays 114 1 rod lens 113; 1 multimode fiber 130; and a light collecting lens 120. The lens array 114 includes a plurality of microlenses corresponding to the light emitting points of the multi-cavity laser 110. This multiplexed laser light source is provided with: a laser array 1 40; a plurality of lens arrays 1 1 4 arranged corresponding to each multi-cavity laser 1 1 0; a laser array 1 40 and a plurality of lens arrays 1 1 1 rod lens between 4 1 1 3; 1 multimode fiber 130; and light collecting lens 120. The lens array 114 includes a plurality of microlenses corresponding to the light emitting points of the multi-cavity laser 110. In the above configuration, each of the laser beams B emitted from the plurality of light emitting points 10 a of the plurality of multi-cavity lasers 110 is collected by the rod lens 113 in a specified direction, and each of the lens arrays 1 1 4 Microlenses are parallel actinic. The collimated laser beam L is collected by the collecting lens 120 and incident at most 200528754 core 1 3 0 a of the mode fiber 1 3 0. The laser light incident on the core 1 3 0 a is transmitted through the fiber p and multiplexed into a single beam and emitted. Next, we will introduce other examples of multiplexed laser light sources. This multiplexed laser light source is shown in Figures 24 (A) and 24 (B). A heat block 182 having an L-shaped cross-section in the optical axis direction is mounted on a heat block 180 having a substantially rectangular shape. A storage space is formed between the heat blocks. On the L-shaped thermal block 1 82, a plurality of light emitting points (for example, 5) are arranged in an array (for example, 2). A multi-cavity laser 1 1 0 is connected to the light emitting points 1 of each wafer. The arrangement direction of 1 0 a is fixed at equal intervals in the same direction. The slightly rectangular heat block 180 is formed with a recess. On the space side of the heat block 180, a plurality of light emitting points (for example, 5) and a plurality of (for example, 2) multi-cavity lasers 110 are arranged in an array. The light emitting point is arranged on the same vertical surface as the light emitting point of the laser wafer arranged on the thermal block 182. A collimating lens array 184 having collimating lenses is arranged on the laser light emitting side of the multi-cavity laser 1 10 in accordance with the light emitting point 110a of each wafer. The collimating lens array 184 is the length direction of each collimator lens and the direction (speed axis direction) where the viewing angle of the laser beam is large, and the width direction and viewing angle of each collimator lens are small (late axis) Direction). In this way, by integrating and collimating the collimating lens array, the space utilization efficiency of the laser light is improved, and the high output of the multiplexed laser light source can be achieved. At the same time, the number of parts can be reduced and the cost can be reduced. The laser light exit side of the collimating lens array 184 is provided with a multimode optical fiber 130 and a light collecting lens 120 that combines the laser beam to the incident end of the multimode optical fiber 130. . 200528754 In the above configuration, the laser beams B emitted by the plurality of multi-cavity lasers 1 1 0 and the plurality of light emitting points 1 0 a arranged on the laser blocks 180 and 182 are each parallel by the collimating lens array 184 The actinic light is collected by the light collecting lens 120 to be incident on the core 130 a of the multi-mode optical fiber 130. The laser light incident on the core 130a is transmitted in an optical fiber and is multiplexed into a single beam and emitted. This multiplexed laser light source is as described above, and it is particularly possible to achieve high output through the multi-segment configuration of multi-cavity lasers and the array of collimating lenses. By using this multiplexing laser light source, a fiber array light source or a beam fiber light source with high brightness can be formed, and therefore it is particularly suitable as an optical fiber light source constituting the laser light source of the exposure device of the present invention. In addition, by accommodating each of the above-mentioned multiplexed laser light sources in a cover, a laser module can be formed in which the emitting end portion of the multimode optical fiber 130 is led out from the cover. Also, in the above embodiment, it has been described that the exit end of the multimode fiber of the multiplexed laser light source is combined with other fibers having the same core diameter as the multimode fiber and a cladding diameter of more than the mode fiber. Take the example of the high brightness of the optical fiber array light source, for example, the multi-mode optical fiber 30 with a cladding diameter of 1 2 5 // m, 8 0 / zm, 6 0 // m, etc. is not combined with other fibers at the exit end. [Light quantity distribution correction optical system] In the above-mentioned embodiment, a light quantity distribution correction optical system composed of a pair of combination lenses is used in the exposure head. This light quantity distribution correction optical system changes the beam width at each exit position so that the ratio of the beam width of the peripheral portion to the center portion near the optical axis is smaller than the incident side, and the exit side becomes smaller. When the parallel beam of the light source is irradiated to the DMD, the light amount distribution on the surface to be irradiated-35- 200528754 is generally corrected. The function of this light amount distribution correction optical system will be described below. First, as shown in FIG. 25 (A), the case where the entire beam widths (full beam widths) HO and H1 of the incident light beam and the outgoing light beam are the same will be described. In addition, in Fig. 25 (A), the parts indicated by symbols 5 1 and 5 2 indicate those that are assumed to be the incident surface and the exit surface in the light amount distribution correction optical system. In the light amount distribution correction optical system, the respective beam widths h0 and hi of the light beam incident on the central portion close to the optical axis Z1 and the light beam incident on the peripheral portion are set to be the same (h0 = h 1). Light quantity distribution correction optical system. For light with the same beam widths h0 and hi on the incident side, the incident beam at the central portion is enlarged to the beam width hO. Conversely, the incident beam at the peripheral portion is applied to reduce the beam width Role. That is, the width h 1 0 of the outgoing light beam at the central portion and the width h 11 of the outgoing light beam at the peripheral portion are hllChlO. When expressed in terms of the ratio of the beam width, the ratio of the beam width ratio [h Π / h 1 0] of the peripheral portion to the center portion on the exit side is inferior to that on the incident side (h 1 / hO = 1). Small (hi 1 / hlO) < 1). In this way, by changing the beam width, it is possible to generate a light beam in the central portion where the light amount distribution is generally increased to the peripheral portion where the light amount is insufficient. As a whole, the light amount distribution on the illuminated surface is reduced without reducing the light utilization efficiency. Slightly uniform. The degree of uniformity is, for example, that the bright spots in the effective area are within 30%, and preferably set within 20%. When the light quantity distribution is used to correct the function and effect of the optical system based on this light distribution and the overall beam width is changed on the incident side and the outgoing side (Nos. 25 (B) and 25 (C)) 200528754 The second β wide picture shows the incident side When the total beam width Η0 is reduced to a width Η2 and emitted (HO > Η2). In this case, the light amount distribution correction optical system is a light beam with the same beam widths h0 and h 1 on the incident side, and the beam width h 1 0 in the central portion becomes larger than the peripheral portion on the outgoing side. Conversely, the peripheral portion The beam width h 11 of the portion becomes smaller than the central portion. In consideration of the reduction rate of the light beam, the reduction rate of the incident beam to the center portion is set to be smaller than that of the peripheral portion, and the reduction rate of the incident beam to the peripheral portion is set to have a larger effect than the central portion. In this case, the ratio "Η 1 1 / Η 1 0" of the beam width at the peripheral portion to the beam width at the center portion becomes smaller than the ratio (h 1 / h0 2 1) on the incident side ((h 11 / h 1 0) < 1). Figure 25 (C) shows the case where the entire beam width HO on the incident side is enlarged to a width H3 and emitted (HO < H3). Even in this case, the light amount distribution correction optical system is set such that the light beams with the same beam widths hO, h 1 are incident on the incident side, and the beam width h 1 0 in the central part is changed as compared with the peripheral part on the outgoing side. Large, on the other hand, the beam width h11 at the peripheral portion becomes smaller than that at the center portion. If the magnification of the light beam is taken into consideration, the magnification of the incident light beam to the center portion is set larger than that of the peripheral portion, and the magnification of the incident light beam to the peripheral portion is set to be smaller than that at the center portion. effect. In this case, the beam width ratio “hll / hlO” at the peripheral portion of the beam width at the center portion becomes smaller than the ratio (h 1 / hO = 1) on the incident side ((h 1 1 / h 1 0) < 1). In this way, the light amount distribution correction optical system changes the beam width at each exit position because the ratio of the beam width at the peripheral portion to the beam width at the center portion near the optical axis Z 1 is set to be lower than the incidence side. The exit side becomes smaller, so light with the same beam width is on the incident side. On the exit side, the light at the central part becomes larger than the peripheral part, and the beam width at the peripheral part becomes larger than the center. Department is still small. Thereby, the light beam at the central portion can be generated to the peripheral portion, and a light beam section having a slightly uniform light quantity distribution can be formed without reducing the light utilization efficiency of the entire optical system. An example of specific lens data of a paired combination lens used as a light quantity distribution correction optical system is shown below. In this example, as in the case where the light source is a laser array light source, the lens data is shown when the light quantity distribution of the cross section of the outgoing beam is Gaussian. In addition, when a semiconductor laser is connected to the incident end of the single-mode optical fiber, the light amount distribution of the outgoing beam from the optical fiber becomes a Gaussian distribution. This embodiment is also applicable to such a case. In addition, by reducing the core diameter of the multimode fiber to a configuration close to that of a single mode fiber, the light amount system near the center portion of the optical axis can be applied to a case where the light amount is larger than that at the peripheral portion. Table 1 below shows basic lens data. [Table 1] Basic lens data Si ri di Ni (surface number) (curvature radius) (surface interval) (refractive index) 01 aspheric 5.000 1.5281 1 02 〇〇50.000 03 〇〇7.000 1.52811 04 Aspheric surface can be seen from Table 1, The paired combination lens is composed of two aspherical lenses with rotational symmetry. The surface on the light incident side of the first lens disposed on the light incident side is referred to as a first surface, the surface on the light exit side is referred to as a second surface, and the first surface is aspherical 200528754. In addition, the surface on the light incidence side of the second lens disposed on the light emission side is referred to as the third and third surfaces, the surface on the light emission side is referred to as the fourth surface, and the fourth surface has an aspheric shape. In Table 1, the plane number Si represents the number of the i-th (i-2 to 4) plane, the radius of curvature ri represents the radius of curvature of the i-th plane, and the plane interval di represents the light of the i-th plane and the i + 1-th plane. Face spacing on the axis. The face interval d i 値 is in millimeters (1 mm). The refractive index N i represents 値 with a refractive index at a wavelength of 405 nm with respect to the optical element having the i-th surface. Table 2 below shows aspherical data on the first and fourth surfaces. • [Table 2] Aspheric data 1st and 4th surface C — 1. 4098E — 02 — 9 · 8506E — 03 K — 4. 2192E + 00 — 3 · 625 3E + 01 a 3 — 1 • 0027E — 04 — 8 · 99 80E- 05 a 4 3 · 059 1 E- 05 2.3060E- 05 a 5-4.5115E- 07 —2. 2860E— 06 a 6 — 8 · 2819E— 09 8 · 766 1 E— 08 a7 4 · 1 020E -12 4.4028E — 10 a8 1.223 1-1 3 1 · 3624E- 12 a9 5 · 3 7 5 3E- 16 3. 396 5E— 1 5 a 1 0 1 · 6315E- 18 7. 4823E- 18 aspheric surface The data are expressed by the coefficients in the formula (A) below the aspherical shape. -39 one 200528754 [Equation 1] r ίο. (A) I = — C'p · ρ l + 7l- / C (C · P) 2 / = 3 Each coefficient in the above formula (A) is defined as follows. Z: the length (mm) of the perpendicular from the point on the aspheric surface at the position p from the optical axis to the apex of the aspheric surface (plane perpendicular to the optical axis) p: distance from the optical axis ( mm) K: conic coefficient C: paraxial curvature (1 / r, r: paraxial curvature radius) ai: aspheric coefficient of the i-th order (i = 3 ~ 1 0) is shown in the number shown in Table 2, The symbol "E" indicates that the number following it is an index that should be base 10, and the number represented by the base 10 exponential function is that that is multiplied by "E". For example, "1. 0E — 02" is taken as an example, which means "1. 0χ 10 · 2". Fig. 27 is a diagram showing the light quantity distribution of the illuminating light obtained by the paired combination lenses shown in Tables 1 and 2 above. The horizontal axis represents the coordinate from the optical axis, and the axis represents the light amount ratio (%). In addition, for comparison, the light quantity distribution (Gaussian distribution) of the illuminating light when the correction is not performed is shown in FIG. 26. As can be seen from Figs. 26 and 27, by performing correction with the optical distribution correction optical system, it is possible to obtain a slightly uniform scene distribution compared with the case where correction is not performed. With this, the spotless exposure can be performed with uniform laser light without reducing the light utilization efficiency in the exposure head. In addition, commonly used rod integrators or fly-eye lenses can also be used. [Other imaging optical systems]-40-200528754 In the above-mentioned embodiment, although the two groups of lenses as the imaging optical system are provided on the light reflection side of the DMD used by the exposure head, it can also be configured to enlarge the laser light for imaging Imaging optical system. By enlarging the cross-sectional area of the beam line reflected by the DMD, the area of the exposed area (image area) in the exposed surface can be enlarged to a desired size. For example, the exposure head may be constituted as shown in FIG. 31 (A): an illuminating device 144 that irradiates laser light to DMD50, DMD50; a lens system 454,458 that magnifies the laser light reflected by DMD50, and corresponds to each of DMD50 A microlens array 472 in which a plurality of microlenses 474 are arranged in pixels; an optical beam array 476 in which a plurality of apertures 478 are arranged corresponding to each microlens of the microlens array 472; and the laser light passing through the optical beam is imaged on the exposed surface 56 The lens system is 480,482. With this exposure head, when laser light is irradiated by the illuminating device 144, the cross-sectional area of the beam line reflected by the DMD50 in the opening direction is magnified several times (for example, 2 times) through the lens systems 454 and 458. The amplified laser light is collected by the microlenses of the microlens array 472 and the pixels corresponding to the DMD50, and passes through the corresponding aperture of the aperture array 476. The laser light passing through the aperture is imaged on the exposed surface 56 through the lens systems 480 and 482. In this imaging optical system, the laser light reflected by the DMD50 is projected onto the exposed surface 56 through the magnification lenses 454 and 458, so that the entire image area is widened. At this time, if the microlens array 472 and the optical chirp array 4 7 6 are not arranged, as shown in FIG. 3 1 (B), the pixel size of each light beam spot BS projected onto the exposed surface 56 is 1 pixel size ( The light spot size) is larger in accordance with the size of the exposed area 468, and the MTF (Optical Transfer Function) characteristic indicating the sharpness of the exposed area 468 is reduced. 200528754 On the one hand, when the microlens array 472 and the optical chirp array 476 are arranged, the laser light reflected by the DMD50 is collected according to each microlens of the microlens array 472 and corresponding to each pixel of the DMD50. As a result, as shown in FIG. 31 (C), even when the exposure area is enlarged, the spot size of each beam spot BS can be reduced to a desired size (for example, 1 0 // m κ 10 em), which can prevent degradation of MTF characteristics to perform high-definition exposure. In addition, the reason why the exposure area 468 is tilted is because the DMD50 is tilted so that there is no gap between the pixels. In addition, even if the light beam according to the aberration of the microlens is wide, the light beam can be shaped to have a fixed size on the exposed surface 56 by using the aperture, and at the same time, the light beam can be set to correspond to each pixel. Aperture prevents crosstalk between adjacent pixels. Furthermore, by using the same high-brightness light source as the above-mentioned embodiment for the lighting device 144, the beam angle of each microlens incident from the lens 458 to the microlens array 472 becomes smaller, so that the beam of adjacent pixels can be prevented. Part of the incidence. That is, a high extinction ratio can be achieved. [Effects of the Invention] The light molding apparatus of the present invention can obtain an effect capable of performing high-speed molding. When a high-brightness light source is used as the light source, the effect of performing high-precision molding can be obtained. [Brief Description of the Drawings] FIG. 1 is a perspective view showing the appearance of a light molding apparatus according to the first embodiment. Fig. 2 is a perspective view showing the structure of a scanner in the light forming apparatus of the first embodiment. -4 2-200528754 Figure 3 (A) is a plan view showing the exposed areas formed on the liquid surface, and Figure 3 (B) is a map showing the exposure areas of each exposure head. Fig. 4 is a perspective view showing a schematic configuration of an exposure head in the light forming apparatus of the first embodiment. Figure 5 (A) is a cross-sectional view along the sub-scanning direction along the optical axis of the structure of the exposure head shown in Figure 4, and Figure 5 (B) is a side view shown in Figure 5 (A) . Fig. 6 is an enlarged view showing a part of the structure of a digital micromirror device (DMD). Figures 7 (A) and 7 (B) are explanatory diagrams for explaining the operation of the DMD. Figures 8 (A) and 8 (B) are plan views showing the arrangement and scanning lines of the exposure beam when the DMD is not tilted and when it is tilted, and Figure 8 (B) is the layout and scan of the DMD exposure beam Plan of the line. Figure 9 (A) is a perspective view showing the structure of a fiber array light source, Figure 9 (B) is a partially enlarged view of Figure 9 (A), and Figures 9 (C) and 9 (D) are shown in Lei Arrangement plan view of light emitting points in the emission section. Fig. 10 is a configuration diagram of a multimode fiber. Fig. 11 is a plan view showing a configuration of a multiplexing laser light source. Figure 12 is a plan view showing the structure of a laser module. Fig. 13 is a side view showing the structure of the laser module shown in Fig. 12; Fig. 14 is a partial side view showing the structure of the laser module shown in Fig. 12; Figs. 15 (A) and 15 (B) are sectional views showing the optical axis along the difference between the optical axis of the focal depth in the conventional exposure apparatus and the focal depth in the optical molding apparatus of the first embodiment. -4 3-200528754 Figures 16 (A) and 16 (B) are examples of the areas where DMDs are used. Fig. 17 (A) is a side view of a case where the use area of the DMD is suitable, and Fig. 17 (B) is a sectional view in the sub-scanning direction along the optical axis of Fig. 17 (A). Fig. 18 is a plan view for explaining an exposure method for fully exposing the liquid surface of the photocurable resin with one scan of the scanner. Figures 19 (A) and 19 (B) are plan views illustrating an exposure method in which the liquid surface of the photocurable resin is fully exposed by a plurality of scans of the scanner. Fig. 20 is a perspective view showing the structure of a laser array. Figure 21 (A) is a perspective view showing the structure of a multi-cavity laser, and figure 2 1 (B) is a multi-cavity laser in which the multi-cavity laser shown in Figure 2 1 (A) is arranged in an array An oblique view of the array. Fig. 22 is a plan view showing another configuration of the multiplexed laser light source. Fig. 23 is a plan view showing another configuration of the multiplexed laser light source. Figure 24 (A) is a plan view showing other components of the multiplexed laser light source, and Figure 24B is a cross-sectional view along the optical axis of Figure 24 (A). Figures 25 (A), (B), and (C) are explanatory diagrams illustrating the correction of the optical system by the light amount distribution correction. Fig. 26 is a graph showing a light amount distribution when the light source has a Gaussian distribution and the light amount distribution correction is not performed. Fig. 27 is a graph showing a light amount distribution corrected by the light amount distribution correction optical system. Fig. 28 is an oblique view showing the structure of a conventional laser lamination molding apparatus. Fig. 29 is a perspective view showing the structure of a conventional movable mirror type lamination molding apparatus -44-200528754. Figure 30 (A) is a plan view showing an example of an exposure pattern of an exposed area, and Figure 30 (B) is a perspective view showing a state in which pixels of the first group of Figure 30 (A) are exposed, Figure 30 (C) is a perspective view showing a state after the pixels of the second group in Figure 30 (A) are exposed. Figure 31 (A) is a cross-sectional view along the optical axis of the structure of another different exposure head combined with the optical system, and Figure 30 (B) is a projection when the micro lens array is not used, etc. A plan view of the light image to the exposed surface. Figure 30 (C) is a plan view showing a light image projected onto an exposed surface when a microlens array is used. [Description of main component symbols] 10 · · · · • Heat block 1 1 to 17 · · · Collimating lens 20 · · · · · Condensing lens 30 · · · · • Multimode fiber 50 · · · · • Digital micro Mirror Device (DMD) 53 • • • • Exposure beam 54, 58 ^ • • Lens system 56 • • • • • Scanning surface (exposed surface) 64 • • • • • Laser module 66 • • • • • Fiber Array Light Source 68 · ♦ · · • Laser emitting section 73 · · · · • Combined lens 150-»• Lu • Photosensitive material 200528754 152 ..... stage 15 6 ..... setting stage 158 ..... guide 16 2 ..... scanner 16 6 ..... exposure head 168 ..... exposure area 170 · • exposed area