200405032 玖、發明說明： 【發明所屬之技術領域】 本發明係有關曝光頭及曝光裝置與其應用，特別是有關因 應畫像資料以由空間光調變元件所調變的光束將感光材料曝 光的曝光頭、具備有其曝光頭的曝光裝置、應用該曝光裝置 的光造形裝置及積層造形裝置、和漂白處理裝置、以及使用 有該曝光裝置的微小流路之形成方法。 【先前技術】 以往係提案有種種利用數位微鏡裝置（DMD )等之空間光 調變元件，以因應畫像資料所調變的光束來執行畫像曝光的 曝光裝置。 例如，D M D係把因應控制信號而反射面之角度會變化之多 數個微鏡被2維狀地配列在矽等之半導體基板上之鏡裝置， 使用有此DMD的曝光裝置如第15 ( A )圖所示，係由照射雷 射光之光源1，將由光源1所照射的雷射光予以准直的透鏡系 2,以及使配置在透鏡系2的略焦點位置的DMD3，DMD3所反 射的雷射光在掃描面5上成像的透鏡系4，6所構成。 在上述曝光裝置中，依據因應畫像資料等所生成的控制信 號，以未圖示的控制裝置將DMD3之微鏡各自作開啓、關閉 控制以調變雷射光，再以被調變的雷射光來執行畫像曝光。 然而，通常被使用的DMD係構成爲在基板上之主掃描方向 約800個，副掃描方向約600個之微鏡以2維狀配列，而在相 當於1畫素的1個微鏡調變雷射光需要100〜200 //sec的時 間。 爲此，例如，使配列在主掃描方向之複數個曝光頭在副掃描 方向連續地移動，且每1主掃描線以200 // sec調變，在其間使 200405032 曝光頭在副掃描方向移動2 /z m時，將500mm2的區域曝光需 要50秒左右的時間。亦即，由於DMD調變速度慢，所以使 用DMD作爲空間調變元件的曝光頭係具有難以高速曝光的 問題。 【發明內容】 本發明係爲解決上述問題而成者，本發明之第1目的爲提 供一加快空間光調變元件之調變速度且可高速曝光的曝光頭 及曝光裝置。 又，近年來伴隨著3維CAD (電腦輔助設計）系統的普及， 係利用光造形系統，其依據由3維CAD作成在電腦上的假想 空間之3維形狀，再依CAD資料以光束將光硬化性樹脂曝光 而作成3維模型之造形。在此光造形系統中，在電腦上將CAD 資料以指定間隔切割再作成複數個斷面資料，依據各斷面資 料以雷射光掃描液狀的光硬化性樹脂之表面使硬化成層狀， 再將樹脂硬化層依序積層以作成3維模型之造形。以光造形 方法而言，係事前在上方開放型的糟內貯留液狀的光硬化性 樹脂，再使配置在接近光硬化性樹脂的液面之造形台，依序由 樹脂的自由液面沈下再將樹脂硬化層積層之自由液面法係廣 範地爲人所知悉。 以往，在此光造形系統所使用的光造形裝置係具有如「九 谷洋二：光造形系統之基礎、現狀、問題點、模型技術、第 7卷第10號，PP18-23，1 992」所示之依雷射繪圖器方式來執 行掃描及依可動鏡方式來執行掃描者。 茲以第30圖來表示雷射繪圖器方式的光造形裝置。此裝 置中，由雷射光源250所振盪之雷射光係通過具備有遮板252 的光纖254而到達XY繪圖器25 6,再由XY繪圖器256照射 200405032 到谷器2 6 0內的光硬化性樹脂2 6 2之液面2 6 6。又，藉由具備 有X定位機構258a和Υ定位機構25 8b之ΧΥ定位機構258 以控制XY繪圖器256的X方向，γ方向的位置。因此藉由使 XY繪圖器256 —邊移動於X方向，γ方向，一邊藉由遮板252 · 因應斷面資料把由X Y繪圖器2 5 6所照射的雷射光作開啓、 、 關閉控制，係可硬化液面266之指定部分的光硬化性樹脂 262。 然而，在依雷射繪圖器方式的光造形裝置中，在遮板速度或 繪圖器之移動速度上係有限度，具有造形上需要長時間之問 題。 · 接著，以第3 1圖來表示以往依使用有電流計鏡的可動鏡方 式之光造形裝置。在此裝置中，雷射光270係被X軸旋轉鏡 272、Y軸旋轉鏡274所反射而被照射在光硬化性樹脂262。 X軸旋轉鏡272係以Z軸爲旋轉軸旋轉以控制照射位置之X 方向的位置，Υ軸旋轉鏡274係以X軸爲旋轉軸而旋轉，以控 制照射位置之Υ方向的位置。在此可動鏡方式中，相較於雷 射繪圖器方式，係可提升掃描速度。 然而，在依可動鏡方式的光造形裝置中，由於係以微小的雷 φ 射光點作掃描，所以即使執行例如2〜12m/s的高速掃描，10cm 立方程度的3維模型在造形上需要8〜24小時的時間，在造 形上係需要長時間。又，雷射光270係僅於Y軸旋轉鏡274 在指定範圍的角度入射時被反射，所以照射區域被限定於是， 爲了放大照射區域，當將Y軸旋轉鏡274配置在偏離光硬化 性樹脂262之高的位置時，係具有雷射光點的直徑變大使定 位精度變差且造形精度降低的問題。又，在使· Y軸旋轉鏡274 之旋轉角度加大時，照射範圍雖然會放大，但是同樣地定位精 一 9 一 200405032 度變差，正畸變（pincushionerror)會增加。再者，於使用有電 流計鏡的光造形裝置上也具有應變補正或光軸調整等之光學 系統的調整複雜且光學系統複雜、裝置全體大型化之問題。 此外，在依任何方式的光造形裝置，以雷射光源來說係使用 高輸出之紫外線雷射光源，以往一般爲依氬氣雷射等氣體雷 射或依HG (第3高諧波）的固體雷射，氣體雷射係在管之交 換等的維修麻煩，再加上高價且光造形裝置的價格提高，必需 冷卻用冷卻器等之附帶設備所以裝置整體係大型化。於THG 固體雷射中，在於Q開關的脈波動作係反複速度慢，不適用在 高速曝光。又，因使用THG光使波長變換效率變差而不能高 輸出化，再加上作爲激勵半導體雷射者必需使用高輸出，所以 成爲非常高成本者。 有鑑於此問題，在日本專利特開平1 1 一 1 38645號公報中係 揭示一種光造形裝置，其具備有複數個能以較單一之畫素還 大的尺寸的光點來照射曝光區域的光源，依複數個光源將畫 素多重曝光。此裝置中，依複數個光源將畫素多重曝光，所以 即使各個光源之輸出爲小，也可將平價的發光二極體（LED ) 作爲光源來使用。 然而，在日本專利特開平1 1 — 1 3 8645號公報所記載之光造 形裝置中，各光源之光點尺寸係各單一的畫素還大，所以在高 精細的造形上不能使用，且依複數個光源將畫素作多重曝光， 所以在動作上浪費甚多，也具有造形上需要長時間之問題。 另外，因爲光源數增加，也具有所謂之曝光部大型化的問題。 再者，即使以LED的輸出光量作多重曝光也具有不能獲得充 分的分辨率之虞。 本發明係有鑑於上述先前技術的問題點而成者，本發明之 -10- 200405032 第2目的提供一可高速造形的光造形裝置。又，本發明之第3 目的係提供一可高精細造形的光造形裝置。 開發係次於使用光硬化性樹脂的積層造形裝置，現在多數 被作爲快速雛型系統來利用的可知有粉末燒結積層造形裝 置。在粉末燒結積層造形裝置中，依據在電腦上製作的3維 模型之斷面資料，將粉末體的表面以雷射光掃描。依雷射光 之掃描，逐次溶融，燒結粉末體，以反覆硬化粉末體之處理。 依此反覆處理，由積層之粉末燒結體所成之3維模型係被造 形。 依粉末燒結的積層造形裝置係可選擇多種多樣的材料，且 不僅是富有靭性之功能評價模型或精密鑄造圖案、鑄型，也 可直接製造金屬模或金屬零件，係具有其應用範圍廣的優 點。在此的積層造形裝置相較於積層造形裝置係在裝置價格 上平價，且成形速度也比較高速，所以可作爲新式樣模型確認 用之用途係驅穩定。 然而，即使是利用粉末燒結的積層造形裝置，藉由使用電流 計鏡等之可動鏡方式，及作爲光源之使用高輸出的紅外線之 C02雷射（波長10.6//m)及YAG雷射（波長1.06//m)等 之氣體雷射及使用固體雷射，在上述積層造形裝置中，也具有 於與使用有此等時同樣之問題點。此外，光束光點直徑大而 解像度低。再者，由於係長波長所以光束的視角角度係大而 不能獲得充分的焦點深度。 本發明係有鑑於上述先前技術之問題點而成者，本發明之 第4目的係提供一可高速造形之光造形裝置。又，本發明之 第5目的係提供一可高精細造形的光造形裝置。 又，近年，利用微機械技術，將執行溶液的混合、反應、分離、 -11- 200405032 以及檢測等的系統積體化在數公分方材的玻璃基板上之所謂 的貫驗室晶片（L a b 〇 r a t 〇 r y ο n a C h i p )的裝置技術係熱烈地 被硏究。實驗室晶片係因應積體化的系統，也稱爲/z -TAS (微 總分析系統）、微反應器等等。 通常，實驗室晶片係具備有形成在厚度1 mm程度的基板 上之溝寬爲數十〜數百// m的微小流路，在微小流路中執行 溶液的混合等作業。在微小流路中由於比界面積變大，因尺 寸效應而難以反應者係會反應、難以混合者係會混合，可有 效率地執行溶液的混合及反應。藉由把微小流路的溝寬設定 爲1〇 〜50 //m，可使流路阻力比較小，可獲得良好的尺寸效 應。又，微小流路的形狀係對流體的送液特性有大的影響，所 以微小流路係具備平滑的壁面且以高精度地製成爲佳。 以往，實驗室晶片的微小流路係利用以阻體膜被覆基板表 面，且依利用紫外線或電子線的微影成像術將阻體膜圖案化 之後，再以此作爲遮罩將基板蝕刻之半導體加工技術所形 成。微影成像術係利用在半導體製程所使用的密接曝光裝置 而被執行。其曝光方式係使用有遮罩校準的類比曝光方式， 例如1平方米的大面積係難以高速曝光。 然而，以往的微小流路之形成方法中，係利用遮罩曝光以執 行圖案化，所以光阻膜的厚度被限制，具有難以高精度形成微 小流路之問題。亦即，當光阻膜薄時，則在蝕刻基板之際，側面 倉虫刻變容易，溝寬的製作精度降低的同時，變成不能達成足夠 的溝深。 又，在遮罩曝光中，對各圖案之高精度的玻璃遮罩等係成爲 必要，所以具有成本變高，造成大面積化困難的同時也不適合 少量多樣的生產之問題。 12- 200405032 一方面，也考量到將微影成像術工程以數位曝光方式來執 行，但是使用紫外線的以往之數位曝光裝置係以單一光束的 掃描曝光，曝光時間係花費過多。特別是，光束直徑爲10 # m 以下且定址能力爲1 // m程度的高精細曝光時，具有曝光時間 過長的問題。 本發明係爲解決上述問題而成者，本發明之第6目的係提 供一可高速且高精度形成微小流路之微小流路之形成方法。 又，本發明之第7目的係提供一種可低成本形成任意圖案的 微小流路之微小流路的形成方法。 再者，在纖維製品的染色加工中，在執行染色處理之前，實施 依氧化或還原處理以將包含在纖維的著色物質予以分解除去 的漂白處理。著色物質係其構造中包含有參與顯色之共軛二 鍵，但是因氧化或還原處理使著色物質之共軛系被破壞，其結 果，纖維係被漂白。以氧化漂白劑而言，係使用次氯酸鈉等之 氯系漂白劑、過氧化氫等，以還原漂白劑而言，係使用氫硫化 物等。 以往，上述的漂白處理一般係在包含高濃度的漂白劑之水 溶液中，將纖維製品長時間煮沸來執行，但是必需將熱容量大 的水加熱至接近沸點爲止，能量效率係不佳，具有由熱和藥品 之相互作用造成纖維的脆化或硬化之問題。 近年係廣範地硏究不使用對環境負荷大的氯系漂白劑之漂 白技術。例如，在日本專利特開平1 1 - 43 86 1號公報係揭示有 對浸漬在氫化硼鈉水溶液的綿布，在室溫將紫外線雷射作脈 波照射以執行漂白的技術。作爲漂白劑使用之氫化硼鈉雖然 還原力弱，但是藉由雷射照射，著色物質係被活性化而變成 易與漂白劑反應。依此技術，不僅不使用氯系漂白劑，也可以 -1 3 - 200405032 低溫執行漂白，處理時間係被縮短。且可以低溫執行漂白處 理，所以纖維的損傷也降低。 此漂白方法中，高能量密度之雷射裝置係必要的，且使用在 紫外線區域可獲得高輸出的準分子雷射。且，以紫外線區域 的波長振盪的半導體雷射一般係輸出小，所以在使用半導體 雷射之場合，係設定爲將複數個半導體雷射積體化而使用。 然而，準分子雷射之能量效率係僅3 %這樣低，使用其之漂 白方法係能量消費量變大，並不能說是考量到環境的漂白方 法。且，準分子雷射之脈波驅動反覆頻率數爲3〇〇Hz，生產性 低。再者，雷射管或雷射氣體的壽命係發射1 X丨〇7次左右這 樣短且維修成本高，裝置係大型化，不能獲得高亮度的雷射光， 也具有難以脈波化之問題。 又，以往由紫外線區域的波長所振盪的半導體雷射係未被 貫用化，在日本專利特開平11 一 4 3 8 6 1號公報中也未形成有 半導體雷射之具體的構成。再加上，短波長的半導體雷射係 難以高合格率製造，在日本專利特開平1 1 - 43861號公報未 記載有任何將紫外線區域的波長振盪的複數個半導體雷射予 以積體化，實現lOOOOmJ/cm2的光密度之具體的構成，在現實 中獲得使用在紫外線區域的波長振盪的半導體雷射之高輸出 光源係有困難。 本發明係有鑑於上述先前技術的問題點而成者，本發明之 第8目的爲提供一藉由短脈波化之雷射光的照射，可以高能 量密度執行漂白處理之漂白處理裝置。本發明之第9目的係 提供一能量效率高，高速且低成本地執行漂白處理之漂白處 理裝置。 爲達成上述第1目的，本發明的曝光頭係相對於曝光面而 200405032 在與指定方向交叉的方向上相對移動，其特徵係包含如下之 構成：照射雷射光之雷射裝置；空間光調變元件，在基板上 以2維狀配列有因應各個控制信號而變化光調變狀態之多數 個晝素部，用以調變由該雷射裝置所照射的雷射光；控制手 段，利用對應曝光資訊所生成之控制信號，控制比配列在該基 板上之畫素部的全部個數還少個數之複數個畫素部；以及使 在各畫素部調變之雷射光成像於曝光面之光學系統。 又，本發明之曝光裝置的特徵爲具備有本發明的曝光頭、 以及使該曝光頭相對於曝光面，在與指定方向交叉的方向相 對移動的移動手段。此曝光裝置係也可構成爲具備有複數個 曝光頭的多頭式曝光裝置。 本發明之曝光頭及曝光裝置係有關空間光調變元件，利用 對應曝光資訊所生成之控制信號，控制比配列在其基板上之 畫素部之全部個數還少個數之複數個畫素部各自。亦即，並 非控制配列在基板之全部的畫素部，係控制一部分的畫素 部。因此，要控制的畫素部之個數變少，控制信號的轉送速度 係比要轉送全部畫素部的控制信號之場合變還短。依此，可 使雷射光的調變速度加快，使高速曝光成爲可能。 上述的 曝光頭係對曝光面以與指定方向交叉的方向相對移動，但是 由該控制手段所控制的畫素部係，對應該指定方向之方向的 長度爲包含在較與該指定方向交叉之方向的長度還長的區域 之晝素部者爲佳。因爲在與曝光頭的移動方向（副掃描方向） 交叉的方向使用長區域的畫素部，所以可減少要使用的曝光 頭數目。 在上述的曝光頭中，該雷射裝置係具備有把由光纖入射端 被入射的雷射光由其出射端出射之複數光纖光源，能以位於 - 15 - 200405032 該複數光纖光源之出射端的發光點各自作陣列狀配列的光纖 光源或束狀配列的光纖束光源來構成。以該光纖而言，使用 核心直徑爲均一且出射端的包層直徑係較入射端的包層直徑 還小的光纖者較好。 ·. 以構成光纖陣列光源或光纖束光源的各光纖光源而言，較 -、 佳爲將雷射光予以合波再使其入射至光纖之合波雷射光源爲 較好。藉由合波雷射光源，可獲得高亮度、高輸出、且適合 於空間光調變元件之曝光。特別是，振盪波長350nm〜450nm 的半導體雷射難以單一元件作高輸出，但是藉由合波可圖謀 筒輸出化。 鲁 又，爲獲得相同光輸出之陣列化的光纖條數少即可解決，所 以成本低。且因光纖的條數少，所以在陣列化之際的發光區 域係變更小（高亮度化）。 例如，光纖光源係能以複數個半導體雷射、1條光纖、以及 把由該複數個半導體雷射所出射的雷射光束予以集光且使集 光束結合於該光纖的入射端之集光光學系統來構成。 又，光纖光源也可以具備有配列在指定方向的複數個發光 點之多腔雷射、1條光纖、以及將該複數個發光點各自出射 鲁 的雷射光束予以集光且使集光束結合於該光纖的入射端之集 光光學系統來構成。且也可爲將由複數個多腔雷射之發光點 之各自出射的雷射光束予以集光而結合於1條光纖。 以空間調變元件而言，可以使用在基板上以2維狀配列有 因應各個控制信號可變更反射面角度之多數個微鏡所構成之 數位微鏡裝置（DMD )、或在基板上以2維狀配列有因應各 個控制信號可遮斷透過光之多數個液晶胞所構成之液晶遮板 陣列。 一 1 6- 200405032 又，在雷射裝置和空間調變元件之間，較佳爲配置有：准 直透鏡，使來自雷射裝置之雷射光（光束）成爲平行光（平 行光束）；光量分布補正光學系統，係變化在各出射位置之 光束寬度，以使相對於接近光軸的中心部的光束寬度之周邊 ^ _ 部的光束寬度之比，在與入射側相較下，出射側的係變小，且 、 依該准直透鏡而被平行光化（平行光束化）之雷射光的光量 分布係在該空間調變元件之被照射面成，爲略均一般地作補 正。 依此光量分布補正光學系統，例如，於入射側爲同一光束 寬度的光，於出射側中央部的光束寬度係變得比周邊部還大， 鲁 反之周邊部的光束寬度係變比中心部還小。如此一來，可將 中央部的光束朝周邊部產生，所以整體而言光之利用效率不 降低，光量分布係可以略均一的光來照射空間調變元件。依 此，在被曝光面不發生曝光斑，高畫質的曝光係成爲可能。 以往，在以紫外線區域的雷射光曝光感光材料之曝光裝置 (紫外線曝光裝置），一般係使用依氬氣雷射等氣體雷射、 THG (第3高諧波）的固體雷射，但是具有裝置係大型且維 修麻煩、曝光速度慢之問題。本發明之曝光裝置係藉由在雷 鲁 射裝置使用波長350〜45 Onm之GaN (氮化鎵）系半導體雷 射而可作成紫外線曝光裝置。依此紫外線曝光裝置，相較於 以往的紫外線曝光裝置，係可謀求裝置的小型化、低成本化 问時成爲可局速曝光。 又，爲達成上述第2目的，本發明之光造形裝置之特徵爲具 備有：造形槽’收容光硬化性樹脂；支持台，用以支持在該造 形槽內以可昇降地設置的造形物；曝光頭，包含有：雷射裝 置’照射雷射光；空間光調變元件，在基板上以2維狀配列 -17- 200405032 有對應各自控制信號可變化光調變狀態之多數個畫素部，用 以調變由該雷射裝置所照射之雷射光；控制手段，利用對應 曝光資訊所生成之控制信號，控制比配列在該基板上之畫素 部的全部個數還少個數之複數個畫素部；光學系統，把在各 畫素部調變之雷射光成像於被收容在該造形槽之光硬化性樹 脂的液面；及移動手段，使該曝光頭對該光硬化性樹脂之液 面作相對移動。 在本發明之光造形裝置中，藉由把在曝光頭之空間光調變 元件之各畫素部調變的雷射光成像於被收容在該造形糟之光 硬化性樹脂的液面，同時利用移動手段把該曝光頭對該光硬 化性樹脂之液面作相對移動，以將收納在造形槽的光硬化性 樹脂的液面掃描曝光。被曝光之樹脂係硬化產生硬化樹脂 層。將硬化樹脂層形成1層之後，使用來支持造形物之設置 在造形槽內的支持台下降而形成新的樹脂表面，同樣地形成 次一硬化樹脂層。如此一來，反覆樹脂的硬化和降下支持台 使硬化樹脂層依序積層以將3維模型造形。 本發明之光造形裝置中，有關曝光頭之空間光調變元件，係 依因應曝光資訊所生成之控制信號，以控制比配列在其基板 上之畫素部的全部個數還少個數之複數個畫素部各自。亦即， 並非控制配列在基板上之畫素部全部，而係控制一部分的畫 素部。因此，要控制之畫素部的個數變少，控制信號的轉送速 度係變得比轉送全部的畫素部之控制信號時還短。依此可加 快調變速度而成爲可高速造形。 在上述之光造形裝置中，由該控制手段所控制的畫素部係， 對應指定方向之方向的長度爲比與該指定方向交叉的方向之 長度還長的區域所包含的畫素部係較佳。藉由使用在雷射裝 -18 - 200405032 置之發光點配列方向之長區域的畫素部，可減少要使用之曝 光頭數。 又，在上述之光造形裝置中，該雷射裝置係可構成爲具備 有把由光纖的入射端入射之雷射光由其出射端出射之複數光 纖光源，且該複數光纖光源之出射端中的發光點各自以1維 或2維陣列狀配列成光纖陣列光源。又，以在該複數個光纖 光源之出射端中之發光點各自作束狀配列的光纖束光源來構 成也可以。藉由陣列化或束化而可圖謀高輸出化。以該光纖 而言，較佳爲使用核心直徑爲均一且出射端的包層直徑係較 入射端的包層直徑還小的光纖。 以構成光纖陣列光源等之各光纖光源而言，將雷射光合波 而入射至光纖的合波雷射光源較佳。藉由合波雷射光源，可 獲得高亮度，高輸出。又，因用以獲得相同光輸出之陣列化的 光纖條數不需多就可解決，所以成本低。再者，因爲光纖之條 數少，所以在陣列化之際的發光區域係變更小（高亮度化）。 由於使用前述之包層直徑小的光纖，所以陣列化之際的發光 區域係變更小而可高亮度化。即使在部分地使用空間光調變 元件之場合，藉由使用高亮度的光纖陣列光源或光纖束光源， 可對使用部分有效率地照射雷射光，特別是對空間調變元件 之照明N A係可變小，可把通過空間調變元件後之成像光束的 焦點深度取深，可以高光密度照射雷射光。依此，高速且高精 細的曝光、造形係成爲可能。例如，1 # m等級之微細形狀的 造形也可能。 例如，光纖光源可以如下所構成：複數半導體雷射；複數半導 體雷射；1條光纖；以及集光光學系統，把由該複數半導體雷射 之各自出射的雷射光束予以集光，且使集光束結合至該光纖 - 1 9- 200405032 入射端。又，光纖光源也可由如下所構成：具備複數發光點之 多腔雷射；1條光纖；以及集光光學系統，把由該複數發光點之 各自出射的雷射光束予以集光，且使集光束結合至該光纖入 射端。再者，把由複數之多腔雷射的發光點之各自出射的雷 射光束予以集光再結合至1條光纖也可以。 以上述光造形裝置所使用的空間調變元件而言，可以使用 在基板上以2維狀配列有因應各個控制信號可變更反射面角 度之多數個微鏡所構成之數位微鏡裝置（DMD )、或在基板 上以2維狀配列有因應各個控制信號可遮斷透過光之多數個 液晶胞所構成之液晶遮板陣列。如同DMD、藉由使用具備 多數個畫素部之空間光調變元件、在多數的通道曝光，以防 止功率分散、熱應變。 以使用在上述的光造形裝置之雷射裝置而言，照射波長350 〜450nm之雷射光係較佳。例如，藉由在半導體雷射使用GaN 系半導體雷射，可構成照射波長350〜450nm的雷射光之雷射 裝置。藉由使用波長350〜450nm的雷射光，與使用紅外線波 長區域的雷射光之場合相較下，係可使光硬化性樹脂的光吸 收率大幅地增加。波長3 50〜450nm的雷射光係短波長，所 以光子能量大，變換爲熱能係容易。如此一來，波長35 0〜 450nm之雷射光係光吸收率大，變換爲熱能係容易，所以光硬 化性樹脂的硬化，亦即可高速地進行造形。雷射光之波長帶 域係35 0〜420nm爲佳。以利用低成本的GaN系半導體雷射 這點而言，波長4 0 5 n m係特別好。 此外，上述的光造形裝置係可構成爲具備複數個曝光頭之 多頭式光造形裝置。藉由多頭式化更可謀求造形的高速化。 又，爲達成上述第4目的，本發明之積層造形裝置的特徵爲 - 20 - Η·ί>2· 200405032 具備：造形槽，收容要利用光照射執行燒結之粉末；支持台， 用以支持在該造形槽內以可昇降地設置的造形物；曝光頭， 包含有：雷射裝置，照射雷射光；空間光調變元件，在基板 上以2維狀配列有對應各自控制信號可變化光調變狀態之多 ”、 數個畫素部，用以調變由該雷射裝置所照射之雷射光；控制 .， 手段，利用對應曝光資訊所生成之控制信號，控制比配列在 該基板上之畫素部的全部個數還少個數之複數個畫素部；光 學系統，把在各畫素部調變之雷射光成像於被收容在該造形 槽之粉末的表面；及移動手段，使該曝光頭對該粉末表面作 相對移動。 ® 本發明的積層造形裝置中，係使在曝光頭之空間光調變元 件的各畫素部所調變之雷射光成像於收容在該造形槽之粉末 的表面，同時利用移動手段使該曝光頭對該粉末之表面作相 對移動，以把收容在造形槽的粉末表面作掃描曝光。被曝光 之粉末係燒結、硬化而形成燒結層。在形成1層燒結層之後， 使用以支持造形物之設置在造形糟內的支持台降下且形成新 的粉末表面，同樣地形成次一燒結層。如此反覆燒結和支持 台的降下，依序積層燒結層以造形3維模型。本發明之積層 @ 造形裝置中，有關曝光頭之空間光調變元件，係利用對應曝光 資訊所生成的控制信號，控制比配列在其基板上之畫素部之 全部個數還少個數之複數畫素部各自。亦即，並非控制配列 在基板上之畫素部全部，而係控制一部分的畫素部。因此，要 控制之畫素部的個數變少，控制信號的轉送速度係變得比轉 送全部的畫素部之控制信號時還短。依此可加快調變速度而 成爲可局速造形。 在上述之積層造形裝置中，由該控制手段所控制之畫素部 -21 - 200405032 係，對應指定方向之方向的長度被包含於比與該指定方向交 叉之方向的長度還長的區域之畫素部者爲較佳。藉由在雷射 裝置之發光點的配列方向使用長區域的畫素部，可減少要使 用之曝光頭數。 又，在上述之積層造形裝置中，該雷射裝置係可構成爲具 備有把被合波入射至光纖的入射端之雷射光由其出射端出射 之複數光纖光源，且該複數光纖光源之出射端中的發光點各 自以1維或2維陣列狀配列成光纖陣列光源。又，也能以在 該複數光纖光源的出射端以配列有發光點各自成束狀的光纖 束光源來構成。陣列化或束化係可圖謀高輸出化。以該光纖 而言，較佳爲使用核心直徑爲均一且出射端的包層直徑係較 入射端的包層直徑還小的光纖。 以構成光纖陣列光源等之各光纖光源而言，將雷射光合波 以入射至光纖的合波雷射光源爲較佳。藉由合波雷射光源可 獲得高亮度、高輸出。且用以獲得相同光輸出之陣列化之光 纖的條數少就可解決且成本爲低。又，因爲光纖的條數少，所 以陣列化之際的發光區域係變更小（高亮度化）。藉由使用 前述之包層直徑小的光纖，在陣列化之際的發光區域係變更 小而可高亮度化。即使爲部分地使用空間光調變元件的場合， 藉由使用高亮度的光纖陣列光源或光纖束光源，可對使用部 分有效率地照射雷射光，特別是對空間調變元件之照明NA係 可變小，可將通過空間調變元件後之成像光束的焦點深度取 深，可以高光密度對燒結用之粉末照射雷射光。依此，成爲可 高速且高精細的曝光。例如，1 // m等級之微細形狀的造形也 可能。 例如，光纖光源可爲如下所構成：複數半導體雷射；複數 -22- 200405032 半導體雷射；1條光纖；以及把該複數半導體雷射之各自所 出射的雷射光束予以集光，且使集光束結合至該光纖的入射 端之集光光學系統。又，光纖光源也可爲如下所構成：具備 複數個發光點之多腔雷射；1條光纖；以及把該複數發光點 之各自所出射的雷射光束予以集光，且使集光束結合至該光 纖的入射端之集光光學系統。又，也可將複數個多腔雷射之 發光點各自所出射的雷射光束予以集光而結合在1條光纖也 可以。 以上述積層造形裝置所使用的空間調變元件而言，可以使 用在基板上以2維狀配列有因應各個控制信號可變更反射面 角度之多數個微鏡所構成之數位微鏡裝置（DMD )、或在基 板上以2維狀配列有因應各個控制信號可遮斷透過光之多數 個液晶胞所構成之液晶遮板陣列。如同DMD、藉由使用具 備多數個畫素部之空間光調變元件、在多數的通道曝光，以 防止功率分散、熱應變。 以使用在上述積層造形裝置的雷射裝置而言，照射波長350 〜45Onm之雷射光係較佳。例如，藉由對半導體雷射使用GaN 系半導體雷射，可構成照射波長350〜450nm之雷射光的雷射 裝置。藉由使用波長3 5 0〜450nm的雷射光，與使用紅外線波 長區域的雷射光之場合相較下，可使燒結用粉末之光吸收率 係大幅地增加。特別是在金屬粉末之場合，光吸收率係顯著 增加。波長350〜450nm之雷射光爲短波長，所以光子能量 係大，所以用以變換成燒結粉末之燒結能量係容易。因此，波 長350〜450nm之雷射光係光吸收率大，對燒結能量之變換容 易，所以對粉末之燒結.，亦即可高速地進行造形，可以高光密 度對燒結用之粉末照射雷射光。依此，成爲可高速且高精細 -23- 200405032 的曝光。例如，1 // m等級之微細形狀的造形也可能。 例如，光纖光源也可爲如下所構成：複數半導體雷射；複 數半導體雷射；1條光纖；以及把來自該複數半導體雷射之 各自所出射的雷射光束予以集光，且使集光束結合至該光纖 的入射端之集光光學系統等。又，光纖光源也可爲如下所構 成：具備複數個發光點之多腔雷射；1條光纖；以及把來自 該複數發光點之各自所出射的雷射光束予以集光，且使集光 束結合至該光纖的入射端之集光光學系統。又，把由複數個 多腔雷射之發光點各自所出射的雷射光束予以集光而結合在 1條光纖也可以。 以上述積層造形裝置所使用的空間調變元件而言，可以使 用在基板上以2維狀配列有因應各個控制信號可變更反射面 角度之多數個微鏡所構成之數位微鏡裝置（DMD )、或在基 板上以2維狀配列有因應各個控制信號可遮斷透過光之多數 個液晶胞所構成之液晶遮板陣列。如同DMD、藉由使用具 備多數個畫素部之空間光調變元件、在多數的通道曝光，以 防止功率分散、熱應變。 以上述之積層造形裝置所使用之雷射裝置而言，照射波長 3 50〜45Onm之雷射光係較佳。例如，在半導體雷射方面係使 用GaN系半導體雷射，可構成照射波長3 50〜450nm的雷射光 之雷射裝置。藉由使用波長350〜450nm的雷射光，在與使用 紅外線波長區域之雷射光的場合相較下，係可使燒結用粉末 之光吸收率大幅地增加。特別是在金屬粉末之場合，光吸收 率係顯著增加。因爲波長3 5 0〜4 5 0 n m之雷射光係短波長， 所以光子能量大，在用以燒結粉末之燒結能量上係變換容 易。如此一來，由於波長3 5 0〜4 5 0 n m之雷射光係光吸收率 200405032 大、變換爲燒結能量容易，所以粉末的燒結亦即造形係可高 速地進行。 雷射光之波長帶域係350〜420nm爲較佳。在使用低成本 之GaN系半導體雷射這點上，波長405nm係特別好。 又，雷射裝置受脈波驅動者係較佳。藉由脈波驅動之雷射 光來曝光粉末，因爲可防止依照射的光所產生之熱的擴散，光 能量係有效地運用在粉末的燒結而可高速的造形。又，因熱 擴散被防止，所以係以被照射之際與光束形狀大略同樣大小 而燒結粉末，表面平滑之高精細的造形係成爲可能。因此，雷 射光之脈波寬係短的較好，lpsec〜lOOnsec更好，lpSec〜 300psec 更佳。 此外，上述的積層造形裝置係可構成爲具備有複數個曝光 頭之多頭式積層造形裝置。藉由多頭式化更可謀求造形的高 速化。 爲達成上述第6及第7目的，本發明之微小流路之形成方 法的特徵爲具備有：曝光工程，以對應微小流路之形成圖案資 料而在空間作調變之波長3 5 0 n m〜4 5 0 n m的雷射光，曝光被 形成在基板上之阻體膜；圖案化工程，對應曝光圖案部分地 去除該阻體膜以形成指定圖案之阻體膜；鈾刻工程，使用該 指定圖案之阻體膜，由表面蝕刻該基板且去除以形成微小流 路。 在此微小流路的形成方法中，因爲使用波長350nm〜 45〇nm 的雷射光，所以沒有必要使用如準分子雷射之紫外線對應的 特殊材料的光學系統，與可視域之雷射曝光裝置同樣地，係可 使用DMD等之空間光調變元件。藉此，因應微小流路之形成 圖案資料’能以空間調變之雷射光將阻體膜曝光。亦即，可 200405032 將在任意圖案之阻體膜予以高速且高精細地作數位曝光。 如此，在曝光工程中，因爲可高速且高精細地曝光在任意圖 案之阻體膜，經過下一個圖案化工程及蝕刻工程之後，可高速 且高精度地形成任意圖案之微小流路。又，因爲是數位曝光、 所以不要各圖案之遮罩，可低成本地形成微小流路。 在上述的曝光工程係可使用具備有照射雷射光之雷射光 源、和具有因應各自控制信號而光調變狀態會變化之多數個 畫素部以矩形狀配置在基板上且用以把由該雷射裝置所照射 的雷射光予以調變的空間光調變元件、以及使在各畫素部被 調變的雷射光成像在曝光面上之光學系統的曝光頭。又，使 此曝光頭相對於阻體膜的曝光面，在與指定方向交叉的方向 相對移動，可將形成在基板上的阻體膜作掃描曝光。 爲了將阻體膜更高精細地曝光，空間光調變元件係使其各 畫素部的配列方向爲與垂直於副掃描方向之方向成指定角度 0般地稍傾斜配置而作多重曝光爲較佳。藉此，可以光束直 徑1 0 // m以1 // m之定址能力高精細地曝光。傾斜角度0爲i 〜 5的範圍爲較佳。° 又，在空間調變元件的出射側，更好爲配置有對應空間調變 元件之各畫素部而設置且具備在各畫素集光雷射光之微透鏡 的微透鏡陣列。在配置有微透鏡陣列之場合，在空間調變元 件之各畫素部所調變之雷射光係因應微透鏡陣列之各微透鏡 而對應各畫素而集光，所以即使在被曝光面中之曝光區域被 放大時，也可縮小各光束光點的尺寸，可執行高精細的曝光。 依使用此縮小光學系統，係能以1 // m的光束直徑，以〇 . 1 # m 的定址能力超高精細地曝光。 如此將阻體膜作高精細的曝光，可形成非常平順的微小流 - 26 - 200405032 路之壁面，可減低流路阻力以獲得良好的尺寸效應。 爲高精度形成微小流路，阻體膜之厚度係厚者爲較佳。 在形成溝寬1 0 // m〜50 // m之微小流路的場合，阻體膜之厚度 係10 // m〜50 // m爲較佳，10 // m〜100 # m爲更好。特別是，使 阻體膜成爲2層及3層般地疊層複數層而執行曝光者爲更 好。因爲係將阻體膜數位曝光，所以利用數位定比機能可高 精度地執行曝光時及顯影後等之延伸等的補正，第1層之曝 光位置和第2層等等之複數層之曝光位置的定位係可高精度 地實現。其結果爲以往之2倍厚度的阻體膜、高精度且高長 寬比的圖案化係成爲可能，可用鈾刻形成高精度且深的微小 流路。此外，所謂的長寬比係阻體膜所形成之溝的溝寬a對 溝深b之比率a/b。 在上述形成方法之曝光工程中，藉由使用高亮度光源以深 的焦點深度作曝光，可以更高精度將阻體膜曝光。以高亮度 光源而言，係將複數之雷射光合波使入射至各自光纖之合波 雷射光源爲合適。又，厚膜化之阻體膜的曝光係需要高輸出 之雷射光源。振盪波長350〜450nm之半導體雷射要以單一 元件之高輸出化雖然難，但藉由合波可圖謀高輸出化。 合波雷射光源係可爲例如：（1 )包含有複數個半導體雷射、 和1條光纖、以及將該複數個半導體雷射各自所出射的雷射 光予以集光，使集光束結合至該光纖的入射端之集光光學系 統之構成；（2 )包含有具備複數個發光點之多腔雷射、和1 條光纖、以及將該複數個發光點各自所出射的雷射光予以集 光，使集光束結合至該光纖的入射端之集光光學系統之構 成；或者爲（3 )包含有複數個多腔雷射、和1條光纖、以 及將該複數個多腔雷射之該複數個發光點各自所出射之雷射 - 27- 200405032 光予以集光，使集光束結合至該光纖之入射端的集光光學系 統之構成。 可以把在上述之合波雷射光源之光纖的出射端中之發光點 各自予以陣列狀配列作成光纖陣列光源、把發光點各自予以 “， 束狀配列作成光纖束光源。藉由束化或陣列化，可更加圖謀 · 高輸出化。又，由圖謀高亮度化之觀點來說，較佳爲使用核 心直徑係均一且出射端的包層直徑比入射端的包層直徑還小 的光纖。 從使發光點的直徑成爲小的觀點，光纖出射端之包層直徑 係比125//m小者較好，80//m以下更好，60//m以下係特別好。 · 核心直徑爲均一且出射端之包層直徑爲比入射端之包層直徑 更小的光纖係，例如可以將核心直徑相同且包層直徑爲不同 之複數個光纖予以結合而構成。依此，可使陣列化之際的發 光區域更小而可高亮度化。又，藉由構成爲將複數的光纖連 接成在連接器可裝卸，使得當光源模組有部分破損時，其交換 係變容易。 特別是，在將如上述之空間光調變元件傾斜配置且使用縮 小光學系統或等倍光學系統以執行超高精細曝光之場合中， 鲁 藉由使用前述之高亮度光.纖陣列光源或光纖束光源，因爲可 使空間調變元件之照明N A設小，所以通過空間調變元件後之 成像光束的焦點深度可取深，可獲得深的焦點深度，在阻體表 面及阻體內光束不會太寬，而成爲可更高精度且高長寬比之 圖案。又，在形成壁面爲傾斜的傾斜流路之場合，也可獲得平 順的圖案。 上述的曝光工程中，雷射光係例如，照射於基板上配列有 因應各個控制fg號而光調變狀態會變化之多數個晝素部空間 -28 - 200405032 光調變元件，而在該空間光調變元件之各畫素部被調變。 以空間調變元件而言，可使用在基板上（例如，矽基板） 以2維狀配列有因應各個控制信號可變更反射面角度之多數 個微鏡所構成之微鏡裝置（DMD ;數位微鏡裝置）。又、空 間調變元件也可構成爲，把具備帶狀反射面且因應控制信號 而可移動的可動格子和具備帶狀反射面的固定格子予以交互 地多數個並列配置所構成之1維的光栅燈泡（GLV )。又，也 可以使用在基板上以2維狀配列有可因應各個控制信號以遮 斷透過光之多數個液晶胞所構成之液晶遮板陣列。 在此等空間調變元件之出射側，較佳爲配置有對應空間調 變元件之各畫素部而設置且具備在各畫素將雷射光集光之微 透鏡的微透鏡陣列。在配置有微透鏡陣列之場合，在空間調 變元件之各畫素部被調變的雷射光係利用微透鏡陣列之各微 透鏡、以對應各畫素而被集光，所以在被曝光面中之曝光區 域被放大之場合，也可縮小各光束光點的尺寸，即使在大面積 化的場合時也可執行高精細的曝光。 爲達成上述第8及第9目的，本發明之漂白處理裝置係具 備：藥液浸漬手段，使染色前的纖維浸漬於包含有氧化劑或 還原劑之藥液；及雷射照射手段，具備合波雷射光源，係包 含複數個半導體雷射、1條光纖、及把由該複數個半導體雷 射各自所出射之雷射光束予以集光，使集光束結合在該光纖 的入射端之集光光學系統，且對浸漬於該藥液之布作波長 200nm〜450nm之雷射光的脈波照射。 本發明之漂白處理裝置中，利用藥液浸漬手段，對染色前之 纖維浸漬包含有氧化劑或還原劑之藥液。接著，對浸漬藥液 的布脈波照射來自雷射照射手段之波長2〇〇nm〜 450nm的雷 200405032 射光。 合波雷射光源係具備有：複數個半導體雷射；1條光纖； 以及把來自該複數半導體雷射之各自所出射的雷射光束予以 集光，且使集光束結合至該光纖的入射端之集光光學系統。 此合波雷射光源係利用光纖將複數個雷射光束予以合波，係 高輸出且高亮度。雷射照射手段係具備有此高輸出且高亮度 的合波雷射光源，所以本發明的漂白處理裝置中，可容易獲得 在漂白處理中所必要的高能量密度。又，合波雷射光源係利 用可連續驅動且輸出穩定性優越的半導體雷射所構成，所以 可照射短脈波化之雷射光，能量效率高，可高速地執行漂白處 理，且與使用準分子雷射的裝置相比較之下，維修係容易且低 成本。 在上述之漂白處理裝置中，依雷射照射手段所照射之雷射 光的波長，由促進漂白處理以謀求高速化的觀點來說，係可獲 得高輸出之氮化鎵（GaN)系半導體雷射之350nm〜450nm 的範圍較好。特別是，以在GaN系半導體雷射最容易高輸出 化之波長400nm〜415nm的範圍較佳。又、以減低纖維的損 傷以提局漂白性目§之觀點而g，波長2 0 0 n m〜3 5 0 n m係較佳。 此外，以不使用特殊之材料的光學系統、謀求裝置之低成本 化且執行高速處理的觀點而言，較400nm還長之波長係較 佳。 又，GaN系半導體雷射因爲係共有性結合、所以轉移的移 動度與GaAs系或AIGalnP系相較下係非常小，又，因爲熱傳 導係數與GaAs系或AIGalnP系相較下係非常大，所以具有高 COD (光學損害）位準。因此，即使在脈波驅動的場合時也 可獲得高輸出化。其結果爲，依短脈波化可獲得峰値功率爲 200405032 數100mW〜數10W之高輸出。依此，可將能率設爲〇 · 〜 1 0 %程度的小，可獲得高能量密度且降低由熱所造成纖維之 損傷。 上述之合波雷射光源也可爲具備有：具有複數個發光點之 半導體雷射；1條光纖；以及用以把來自具備該複數個發光 點之半導體雷射的複數個發光點各自所出射的雷射光束予以 集光，且使集光束結合至該光纖的入射端之集光光學系統所 構成。例如，以具備有複數個發光點之半導體雷射而言，可使 用多腔雷射。 又，以合波雷射光源的光纖而言，使用核心直徑爲均一且出 射端之包層直徑係較入射端之包層直徑還小的光纖爲較佳。 藉由使出射端的包層直徑設小，可圖謀光源的高亮度化。由 發光點的直徑設小的觀點看來，光纖之出射端的包層直徑係 較125//m小者較好，80//m以下更好，60//m以下特別好。核 心直徑爲均一且出射端的包層直徑比入射端的包層直徑還更 小的光纖係，例如可以核心直徑爲相同且包層直徑不同之複 數個光纖予以結合而構成。依此，可使陣列化之際之發光區 域變更小，而可高亮度化。又，藉由連接器以可拔脫地將複 數個光纖連接的構成，在光源係部分地破損時係容易交換。 上述之雷射照射手段係包含複數個合波雷射光源來構成也 可以。例如，構成爲把合波雷射光源之發光點（光纖的出射 端）成複數陣列地配列之光纖陣列光源或把合波雷射光源之 發光點成束化之光纖束光源也可以。以光纖陣列光源或光纖 束光源而言，因爲把複數條光纖集束以構成光源，所以更高 輸出化係爲可能。藉此，可以低成本獲得高亮度光源，可獲得 焦點深度深的高亮度之成像光束，所以在高速下之雷射漂白 -31- 200405032 處理係成爲可能。 【實施方式】 以下，參照圖面以詳細說明本發明之實施形態。 (第1實施形態） 第1實施形態係具備有以因應晝像資料而由空間光諷變元 件所調變的光束來曝光感光材料之曝光頭的曝光裝置之實施 形態。 〔曝光裝置之構成〕 有關本發明之實施形態的曝光裝置係如第1圖所示，係具 備有將薄片狀的感光材料i 5 〇吸附在表面而予以保持之平板 狀的載物台1 5 2。而在由4根腳部1 54所支持之厚板狀之設 置台1 5 6的上面，係設置有沿著載物台移動方向延伸之2根 導引部158。載物台152係使其長度方向朝載物台移動方向 而配置，同時依導引部158以可往復移動地被支持著。此外， 在此曝光裝置設置有用以使載物台152沿著導引部158驅動 之未圖示的驅動裝置。 設置台156的中央部係設置有跨越載物台152的移動路徑 般之〕字狀閘門160。〕字狀之閘門160的端部係各自固定 在設置台1 56之兩側面。挾住此閘門1 60而在一側係設置有 掃描器1 6 2，他側係設置有用以檢測感光材料1 5 0之前端及後 端的複數（例如2個）個檢測感測器164。掃描器丨62及檢 測感測窃1 6 4係各自被女裝在鬧門1 6 0且固定配置在載物台 152之移動路徑的上方。此外，掃描器162及檢測感測器164 係連接在未圖示之用以控制此等之控制器上。 掃描器162如第2圖及第3(B)圖所示，係具備有 m行η 列（例如，3行5列）之略矩陣狀配列的複數個（例如，14個） ：ή -32- 200405032 曝光頭166。在此例中，因爲與感光材料150之寬度的關係， 在第3行配置了 4個曝光頭166。此外，在表示配列在第 m 行的第η列之各個曝光頭之場合時，係表示成曝光頭166mn。 依曝光頭1 66的曝光區域1 68係以副掃描方向爲短邊之矩 形狀。 因此，隨著載物台1 5 2之移動，感光材料1 5 0係形成有各曝 光頭166之帶狀的已曝光區域170。此外，在表示第m行之 第η列所配列之各個曝光頭的曝光區域之場合，係表示爲曝 光區域168mn。 又，如第3(A)圖及3(B)圖所示，帶狀之已曝光區域170 係無間隙地在與副掃描方向正交的方向排列，線狀配列之各 行的曝光頭各自係在配列方向以指定間隔（曝光區域之長邊 的自然數倍，本實施形態中爲2倍）偏移而配置著。因此，在 第1行的曝光區域168n和曝光區域16812之間之不能曝光 的部分係可依第2行之曝光區域1 6821和第3行的曝光區域 1 6831而曝光。 曝光頭166u〜 166mn係各自如第4,5 ( A )及5 ( B )圖所 示，具備數位微鏡裝置（DMD) 50以作爲因應畫像資料把入 射光束因應畫像資料而對各畫素作調變之空間光調變元件。 此DMD50係連接在未圖示之具有資料處理部和鏡驅動控制 部之控制器上。此控制器之資料處理部係依據輸入的畫像資 料，生成用以對各曝光頭166之DMD50之應控制區域內的 各微鏡驅動控制之控制信號。此外有關要控制的區域係在後 面加以敘述。又，鏡驅動控制部係依據在畫像資料處理部生 成的控制信號，控制各曝光頭166之DMD50之各微鏡的反 射面之角度。此外有關反射面之角度控制係在後面加以敘 -33 - 200405032 述。在DMD 5 0的光入射側係以如下之順序配置即：備有光纖 的出射端部（發光點）沿著與曝光區域1 68之長邊方向對應 之方向成一列配列的雷射出射部之光纖陣列光源6 6 ;把由光 纖陣列光源66所出射之雷射光作補正且使集光於DMD上之 透鏡系67;以及將透射透鏡系67的雷射光朝DMD50反射之 鏡69。 透鏡系67,係由使光纖陣列光源66所出射的雷射光平行光 化之1對組合透鏡7 1、使被平行光化的雷射光之光量分布 成爲均一般而加以補正之1對組合透鏡73、以及把光量分 布被補正的雷射光集光於DMD上之集光透鏡75所構成。組 合透鏡73係具備有，對雷射出射端之配列方向，接近透鏡的 光軸之部分爲擴大光束且離開光軸的部分係光束縮減，且在 與此配列方向正交的方向使光照其原樣通過之機能，使光量 分布成爲均一般地補正雷射光。或者，使用複眼透鏡或杆式 積分儀等之光學系統以使光量分布均一化也可以。 又，在DMD50的光反射側配置有使在DMD50反射的雷射光 成像於感光材料15 0的掃描面（被曝光面）56上之透鏡系54、 58。透鏡系54及58係配置成使DMD50和被曝光面56成爲共軛 的關係。 DMD50係如第6圖所示，在SRAM胞（記憶體胞）60上，微 小鏡（微鏡）62係由支柱所支持而配置者，係使構成畫素 (PIXEL)之多數個（例如，600個X 800個）微小鏡以格子狀 配列所構成之鏡裝置。各畫素之最上部係設置有由支柱所支 持的微鏡62,微鏡62的表面係蒸鍍有鋁等之反射率高的材 料。此外，微鏡62的反射率係90%以上。且在微鏡62的正下 係透過包含有鉸鏈及軛架的支柱配置有在通常的半導體記憶 200405032 體之生產線所製造之砂閘門的CMOS之SRAM胞60,全體係構 成爲整塊（一體型）。 當DMD50的SRAM胞60被寫入數位信號時，則由支柱所 支撐的微鏡62係以對角線爲中心，被以相對於配置有DMD50 的基板側，以α度（例如控1 0度）的範圍傾斜。第7 ( A )圖 係表示微鏡62在開啓狀態之傾斜在+ α度的狀態，第7 ( B ) 圖係微鏡6 2在關閉狀態之傾斜在-α度的狀態。因此，因應畫 像信號，藉由把在DMD50之各畫素的微鏡62之傾斜控制成 如第6圖，則入射至DMD50的光係朝各自的微鏡62之傾斜 方向反射。 又，第6圖係放大DMD50之一部分，表示微鏡62係被控 制+ α度或—α度之一狀態例。各自的微鏡62之開啓、關 閉控制係由連接在DMD50之未圖示的控制器所執行。此外， 在依關閉狀態的微鏡62、光束會被反射之方向上係配置有 光吸收體（未圖示）。 又，DMD50係配置成其短邊與副掃描方向成指定角度0 (例 如，1 °〜5 ° )般地稍微傾斜者爲較佳。第8 ( A )圖係表示 不使DMD50傾斜時之依各微鏡的反射光像（曝光束）53之 掃描軌跡，第8 ( B )圖係使DMD50傾斜時之曝光束53的掃 描軌跡。 在DMD5 0中，於長度方向配置有多數個微鏡（例如，800個） 之微鏡列係在寬度方向配置有多數組（例如，600組），如第8 (B)圖所示，藉由傾斜DMD50,使得依各微鏡的曝光束53 之掃描軌跡（掃描線）的間距Pi係變得比不傾斜DMD50時 之掃描線的間距P2還狹小，可使解像度大幅地提升。一方面， 因爲DMD50之傾斜角微小之故，所以使DMD50傾斜時之掃 200405032 描寬度W2和使DMD50不傾斜時之掃描寬度W1係略相同。 又，依不同的微鏡列、相同掃描線上係成爲重疊被曝光（多 重曝光）。如此，藉由被多重曝光，而可控制曝光位置的微少 量，可實現高精細的曝光。又，藉由微少量的曝光位置控制等 之數位晝像處理，可無段差地把配列在主掃描方向之複數個 曝光頭間之連接處予以連繫。 此外，取代DMD50之傾斜，而改以使各微鏡列在與副掃描 方向正交的方向，以指定間隔偏移作棋盤狀配置，也可獲得同 樣的效果。 光纖陣列光源66,係如第9 ( A)圖所示，具備複數（例如，6 個）個雷射模組64,各雷射模組64係結合在多模光纖30之 一端。多模光纖30之他端係結合有核心直徑爲與多模光纖 3 0相同且包層直徑較多模光纖3 0小的光纖3 1，如第9 ( C ) 圖所示，光纖3 1的出射端部（發光點）係沿著與副掃描方向 正交的主掃描方向配置1列而構成雷射出射部68。此外，如 第9 ( D )圖所示，也可把發光點沿著主掃描方向成2列地配 列。 光纖31之出射端部係如第9(B)圖所示，表面係被平坦 的2片支持板65挾住而固定著。又，光纖31之光出射側係 配置有玻璃等之透明的保護板63,以保護光纖31之端面。保 護板63也可與光纖31的端面密接配置，也可使光纖31之端 面被密封般地配置。光纖31之出射端部雖然光密度且容易 集塵而劣化，但是藉由配置保護板63,不但可防止麈埃對端面 之附著同時可延緩劣化。 在本例中，爲了將包層直徑小的光纖3 1之出射端無間隙地 配列成1歹[J ,在以包層直徑大的部分鄰接的2條多模光纖30 200405032 之間將多模光纖30聚集，而被聚集的多模光纖30所結合之 光纖3 1的出射端，係配列成被挾於以包層直徑爲大的部分鄰 接之2條多模光纖3 0所結合的光纖3 1之2個出射端之間。 這樣的光纖，例如第1 0圖所示，係藉由在包層直徑爲大的 多模光纖30之雷射光出射側的前端部分，將長度1〜30cm之 包層直徑爲小的光纖31予以同軸地結合而可獲得。2條的 光纖係光纖3 1之入射端面在多模光纖30之出射端面以兩光 纖的中心軸呈一致般地熔接而被結合著。如同上述，光纖3 1 之核心31a的直徑係與多模光纖30之核心30a的直徑相同 大小。 又，也可以使長度爲短包層直徑爲大的光纖中熔接有包層 直徑爲小的光纖之短尺寸光纖，經由一套圈或光連接器等而 結合至多模光纖30之出射端。藉由利用連接器等以可裝卸 地結合，以在包層直徑爲小的光纖破損時等場合，使前端部 分的交換變成容易，可減低曝光頭的維修所要之成本。此外， 以下有時把光纖3 1稱爲多模光纖30之出射端部。 以多模光纖30及光纖31而言，也可以是STEP INDEX型光 纖、GRATED INDEX型光纖、及複合型光纖之中任一。例如， 可使用由三菱電線工業株式會社所製造的STEP INDEX型光 纖。在本實施形態中，多模光纖30及光纖31係STEP INDEX 型光纖，多模光纖30係包層直徑=125//m、核心直徑=25// m、NA =0.2、入射端面塗層的透過率= 99· 5%以上，光纖31 係包層直徑= 60//m、核心直徑= 25em、NA=0.2。200405032 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to an exposure head and an exposure device and applications thereof, and particularly to an exposure head that exposes a photosensitive material with a light beam modulated by a spatial light modulation element in response to image data , An exposure device provided with the exposure head, a light shaping device and a multilayer shaping device using the exposure device, a bleaching treatment device, and a method for forming a minute flow path using the exposure device. [Prior art] Conventionally, there have been proposed various exposure devices that use a spatial light modulator such as a digital micromirror device (DMD) to perform image exposure with a light beam modulated in accordance with image data. For example, a DMD is a mirror device in which a plurality of micromirrors whose angle of the reflection surface changes in response to a control signal are arranged two-dimensionally on a semiconductor substrate such as silicon. An exposure device using this DMD is used as the 15th (A) As shown in the figure, the light source 1 irradiates the laser light, the lens system 2 collimating the laser light irradiated by the light source 1, and the DMD 3 and the laser light reflected by the DMD 3 arranged at the slightly focal position of the lens system 2 The lens systems 4 and 6 are formed on the scanning surface 5. In the above exposure device, according to the control signal generated according to the image data and the like, the micromirrors of DMD3 are individually turned on and off with a control device (not shown) to modulate the laser light, and then the modulated laser light is used to Perform portrait exposure. However, the commonly used DMD system is composed of about 800 micro-mirrors on the substrate in the main scanning direction and about 600 sub-scanning directions. The micro-mirrors are arranged in a two-dimensional array, and the micro-mirrors are adjusted by 1 micro-pixel equivalent to 1 pixel. Laser light takes 100 ~ 200 // sec. For this reason, for example, a plurality of exposure heads arranged in the main scanning direction are continuously moved in the sub scanning direction, and each main scanning line is adjusted at 200 // sec, during which the 200405032 exposure head is moved in the sub scanning direction 2 / zm, it takes about 50 seconds to expose a 500mm2 area. That is, since the modulation speed of DMD is slow, an exposure head using DMD as a spatial modulation element has a problem that it is difficult to perform high-speed exposure. SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems. A first object of the present invention is to provide an exposure head and an exposure device that can accelerate the modulation speed of a spatial light modulation element and can perform high-speed exposure. In addition, in recent years, with the popularization of 3D CAD (Computer Aided Design) systems, a light shaping system is used, which is based on a 3D shape of a virtual space created on a computer by 3D CAD. The curable resin is exposed to form a three-dimensional model. In this light shaping system, CAD data is cut on a computer at a specified interval and then a plurality of cross-sectional data are created. Based on the cross-sectional data, the surface of the liquid photo-curable resin is scanned by laser light to be hardened into a layer. The resin hardened layers are sequentially laminated to form a three-dimensional model. In the case of photoforming, the liquid photocurable resin is stored in the open-type dross beforehand, and the forming table disposed near the liquid surface of the photocurable resin is sequentially lowered from the free liquid surface of the resin. The free-surface method of resin-hardened laminated layers is widely known. Conventionally, the light shaping device used in this light shaping system has the following characteristics: "Kutani Yoji: Foundation, Status, Problems, Modeling Technology, Volume 7, No. 10, PP18-23, 1 992" of the light shaping system. Scanner is performed by laser plotter and scanner by movable mirror method. A laser plotter-type optical shaping device is shown in FIG. 30. In this device, the laser light oscillated by the laser light source 250 reaches the XY plotter 25 6 through an optical fiber 254 provided with a shield 252, and is then irradiated by the XY plotter 256 to the light hardening in the trough device 2 60 0. Liquid surface of the flexible resin 2 6 2 2 6 6. In addition, the X positioning mechanism 258 provided with the X positioning mechanism 258a and the X positioning mechanism 25 8b controls the positions in the X direction and the γ direction of the XY plotter 256. Therefore, by moving the XY plotter 256 in the X direction and the γ direction, and through the shutter 252, the laser light irradiated by the XY plotter 2 5 6 is turned on and off according to the sectional data. A photo-curable resin 262 of a specified portion of the hardenable liquid surface 266. However, in the light-shaping device based on the laser plotter method, there is a limit in the speed of the shutter or the moving speed of the plotter, and it has a problem that it takes a long time to shape. · Next, Fig. 31 shows a conventional light shaping device using a movable mirror method using a galvanometer mirror. In this device, the laser light 270 is reflected by the X-axis rotating mirror 272 and the Y-axis rotating mirror 274 and is irradiated onto the photocurable resin 262. The X-axis rotating mirror 272 rotates with the Z-axis as the rotation axis to control the position in the X direction of the irradiation position, and the Y-axis rotating mirror 274 rotates with the X-axis as the rotation axis to control the position in the Y-direction of the irradiation position. Compared with the laser plotter method, the movable mirror method can increase the scanning speed. However, in the light-shaping device based on the movable mirror method, since scanning is performed with a small lightning φ light spot, even if a high-speed scan such as 2 to 12 m / s is performed, a 3-dimensional model with a degree of 10 cm cubic requires 8 for shaping. It takes ~ 24 hours to take a long time to shape. In addition, the laser light 270 is reflected only when the Y-axis rotating mirror 274 is incident at a specified range of angle. Therefore, the irradiation area is limited. In order to enlarge the irradiation area, the Y-axis rotating mirror 274 is disposed away from the photocurable resin 262. When the position is high, there is a problem that the diameter of the laser light spot changes, and the positioning accuracy deteriorates, and the forming accuracy decreases. In addition, when the rotation angle of the Y-axis rotating mirror 274 is increased, although the irradiation range will be enlarged, the positioning accuracy will be the same, and the positive distortion (pincushion error) will increase. Furthermore, the optical shaping device using a galvanometer mirror also has the problems of complicated adjustment of the optical system such as strain correction and adjustment of the optical axis, complicated optical system, and an increase in the size of the entire device. In addition, in any form of optical shaping device, the laser light source is a high-output ultraviolet laser light source. In the past, it was generally based on gas lasers such as argon lasers or HG (third high harmonic). Solid lasers and gas lasers are troublesome for maintenance such as tube exchanges, coupled with the high price and high price of optical shaping devices. Additional equipment such as cooling coolers are required, so the entire system is large. In THG solid-state lasers, the pulse switching action of the Q switch is slow and it is not suitable for high-speed exposure. In addition, the use of THG light deteriorates the wavelength conversion efficiency and cannot achieve a high output, and it is necessary to use a high output as an exciter for semiconductor lasers, so it becomes a very high cost. In view of this problem, Japanese Patent Laid-Open No. 11-1138645 discloses a light shaping device having a plurality of light sources capable of illuminating an exposed area with light spots having a size larger than a single pixel. , Multiple exposure of pixels by multiple light sources. In this device, pixels are multiple-exposed by a plurality of light sources, so even if the output of each light source is small, an inexpensive light-emitting diode (LED) can be used as a light source. However, in the light shaping device described in Japanese Patent Laid-Open No. 1 1-1 8645, the light spot size of each light source is large by a single pixel, so it cannot be used for high-precision shaping. The multiple light sources make multiple exposures of the pixels, so there is a lot of waste in action, and it also has the problem of taking a long time to shape. In addition, since the number of light sources is increased, there is a problem that the so-called exposure section is enlarged. Furthermore, even if multiple exposures are performed with the output light amount of the LED, there is a possibility that sufficient resolution cannot be obtained. The present invention has been made in view of the problems of the foregoing prior art, and a second object of the present invention is to provide a light shaping device capable of high-speed shaping. A third object of the present invention is to provide a light shaping device capable of high-precision shaping. The development system is inferior to a multilayer molding device using a photocurable resin, and many powder sintered multilayer molding devices are currently known as a rapid prototype system. In the powder sintered multilayer forming device, the surface of the powder body is scanned with laser light based on the cross-sectional data of a three-dimensional model made on a computer. According to the scanning of laser light, the powder is successively melted, and the powder body is sintered, so as to be repeatedly hardened. According to this iterative process, the three-dimensional model system formed from the laminated powder sintered body is formed. The multilayer sintering device based on powder sintering can choose a variety of materials, and it is not only a tough function evaluation model or precision casting pattern, mold, but also can directly manufacture metal molds or metal parts, which has the advantage of a wide range of applications. . Compared with the multi-layer forming device, the multi-layer forming device here is cheaper in terms of device price, and the forming speed is relatively high. Therefore, it can be used as a new model to confirm the stability of the application. However, even if it is a multilayer molding device using powder sintering, by using a movable mirror method such as a galvanometer mirror and a light source using a high output infrared C02 laser (wavelength 10. 6 // m) and YAG laser (wavelength 1. 06 // m) and other gas lasers and the use of solid lasers also have the same problems in the above-mentioned multilayer forming device as when they are used. In addition, the beam spot diameter is large and the resolution is low. In addition, since the light beam has a large viewing angle due to its long wavelength, a sufficient depth of focus cannot be obtained. The present invention has been made in view of the problems of the foregoing prior art, and a fourth object of the present invention is to provide a light shaping device capable of high-speed shaping. A fifth object of the present invention is to provide a light shaping device capable of high-precision shaping. In recent years, micro-mechanical technology has been used to integrate solutions, reactions, separations, -11-200405032, and inspection systems onto a glass substrate of a few centimeters square. 〇rat 〇ry ο na C hip) device technology is enthusiastically investigated. Laboratory wafers are integrated systems, also called / z-TAS (micro total analysis system), microreactors, and so on. Generally, a laboratory wafer is provided with a microchannel having a groove width of several tens to several hundreds // m formed on a substrate having a thickness of about 1 mm, and performs operations such as mixing of solutions in the microchannel. Since the specific surface area becomes larger in a minute flow path, those who are difficult to respond due to the size effect will react, and those who are difficult to mix will mix, so that the mixing and reaction of the solution can be performed efficiently. By setting the groove width of the minute flow path to 10 to 50 // m, the resistance of the flow path can be made smaller and a good dimensional effect can be obtained. In addition, the shape of the minute flow path greatly affects the liquid-feeding characteristics of the fluid. Therefore, it is preferable that the minute flow path system has a smooth wall surface and is formed with high accuracy. In the past, the tiny flow path of the laboratory wafer used a resist film to cover the substrate surface, and the resist film was patterned by lithography using ultraviolet or electron rays, and then the semiconductor was etched as a mask. Formed by processing technology. Lithography is performed using a close-contact exposure apparatus used in a semiconductor process. The exposure method is an analog exposure method with mask calibration. For example, a large area of 1 square meter is difficult to expose at high speed. However, in the conventional method for forming a minute flow path, patterning is performed using a mask exposure, so the thickness of the photoresist film is limited, and it is difficult to form a minute flow path with high accuracy. That is, when the photoresist film is thin, when the substrate is etched, the lateral worms are easily etched, and the manufacturing accuracy of the groove width is reduced, and a sufficient groove depth cannot be achieved. Further, in mask exposure, high-precision glass masks and the like for each pattern are necessary, so that there are problems that the cost becomes high, it is difficult to increase the area, and it is not suitable for a small amount of diverse production. 12- 200405032 On the one hand, it is also considered that the lithography imaging process is performed by digital exposure. However, the conventional digital exposure apparatus using ultraviolet rays uses a single beam scanning exposure, which takes too much exposure time. In particular, high-definition exposure with a beam diameter of 10 # m or less and an addressing capability of about 1 // m has a problem that the exposure time is too long. The present invention has been made to solve the above problems, and a sixth object of the present invention is to provide a method for forming a minute flow path capable of forming a minute flow path at high speed and high accuracy. A seventh object of the present invention is to provide a method for forming a minute flow path capable of forming a minute flow path with an arbitrary pattern at a low cost. Furthermore, in the dyeing process of the fiber product, before the dyeing process is performed, a bleaching process that decomposes and removes a colored substance contained in the fiber by an oxidation or reduction process is performed. The structure of a colored substance contains conjugated double bonds that participate in color development. However, the conjugated system of the colored substance is destroyed by oxidation or reduction treatment. As a result, the fiber system is bleached. For the oxidizing bleaching agent, a chlorine-based bleaching agent such as sodium hypochlorite and hydrogen peroxide are used, and for the reducing bleaching agent, a hydrogen sulfide is used. In the past, the above-mentioned bleaching treatment was generally performed by boiling a fiber product for a long time in an aqueous solution containing a high concentration of bleaching agent, but it was necessary to heat water with a large heat capacity to near the boiling point. Interactions with pharmaceuticals cause brittleness or hardening of fibers. In recent years, it has been widely studied that no bleaching technology of chlorine-based bleaching agents with a large environmental load is used. For example, Japanese Patent Laid-Open No. 1 1-43 86 1 discloses a technique for performing bleaching on a cotton cloth dipped in an aqueous solution of sodium boron hydride by irradiating an ultraviolet laser as a pulse wave at room temperature. Although sodium boron hydride used as a bleaching agent has a weak reducing power, the coloring matter is activated by laser irradiation and easily reacts with the bleaching agent. According to this technology, not only chlorine-based bleaching agents are not used, but bleaching can be performed at a low temperature of -1 3-200405032, and the processing time is shortened. Furthermore, bleaching can be performed at a low temperature, so that damage to the fibers is also reduced. In this bleaching method, a laser device having a high energy density is necessary, and an excimer laser which can obtain a high output in the ultraviolet region is used. In addition, a semiconductor laser oscillating at a wavelength in the ultraviolet region generally has a small output. Therefore, when a semiconductor laser is used, it is set to use a plurality of semiconductor laser products. However, the energy efficiency of excimer lasers is as low as 3%, and the use of its bleaching method increases the energy consumption, which cannot be said to be a bleaching method considering the environment. In addition, the pulse wave driving frequency of the excimer laser is 300 Hz, and the productivity is low. Furthermore, the life of a laser tube or laser gas is as short as about 1 × 7 times and the maintenance cost is high. The size of the device is large, the laser light of high brightness cannot be obtained, and it is difficult to pulse. In addition, conventional semiconductor laser systems oscillated by wavelengths in the ultraviolet region have not been widely used, and a specific structure of a semiconductor laser has not been formed in Japanese Patent Application Laid-Open No. 11-383-1. In addition, short-wavelength semiconductor laser systems are difficult to manufacture with high yields. Japanese Patent Laid-Open No. 1 1-43861 does not describe any semiconductor laser that oscillates wavelengths in the ultraviolet region. The specific structure of the optical density of 1000mJ / cm2 makes it difficult to obtain a high-output light source system using a semiconductor laser oscillating at a wavelength in the ultraviolet region. The present invention has been made in view of the problems of the above-mentioned prior art, and an eighth object of the present invention is to provide a bleaching device capable of performing a bleaching treatment with a high energy density by irradiation with short pulsed laser light. A ninth object of the present invention is to provide a bleaching apparatus which has a high energy efficiency, and performs a bleaching process at a high speed and at a low cost. In order to achieve the above-mentioned first object, the exposure head of the present invention is relatively moved in the direction crossing the specified direction with respect to the exposure surface. 200405032 is characterized by the following components: a laser device for radiating laser light; spatial light modulation The element has a plurality of diurnal elements arranged in a two-dimensional shape on the substrate in accordance with various control signals, and is used to modulate the laser light irradiated by the laser device; the control means uses corresponding exposure information The generated control signal controls a plurality of pixel sections which are less than the total number of pixel sections arranged on the substrate; and the optical imaging of the laser light modulated on each pixel section on the exposure surface system. Further, the exposure apparatus of the present invention is characterized by including the exposure head of the present invention, and moving means for moving the exposure head relative to the exposure surface in a direction intersecting the specified direction. This exposure apparatus may be configured as a multi-head exposure apparatus having a plurality of exposure heads. The exposure head and the exposure device of the present invention are related to a spatial light modulation element, and use a control signal generated by corresponding exposure information to control a plurality of pixels which are smaller than the total number of pixel units arranged on the substrate. Ministry of each. In other words, it does not control all the pixel sections arranged on the substrate, but controls a part of the pixel sections. Therefore, the number of pixel sections to be controlled is reduced, and the transfer speed of the control signals is shorter than that in the case where control signals for all pixel sections are to be transferred. According to this, the modulation speed of the laser light can be accelerated, and high-speed exposure becomes possible. The above exposure head relatively moves the exposure surface in a direction that intersects the specified direction, but the length of the pixel unit controlled by the control means corresponding to the specified direction is included in the direction that intersects the specified direction more. It is better to use the day element part in the longer area. Since the pixel portion of the long area is used in a direction intersecting the moving direction (sub-scanning direction) of the exposure head, the number of exposure heads to be used can be reduced. In the above-mentioned exposure head, the laser device is provided with a plurality of optical fiber light sources for emitting laser light incident from an incident end of the optical fiber from an exit end thereof, and the light emitting point at the exit end of the plurality of optical fiber light sources Each of them is configured as an array of optical fiber light sources or a bundle of optical fiber light sources. For this optical fiber, it is better to use a fiber with a uniform core diameter and a smaller cladding diameter at the exit end than the cladding diameter at the entrance end. ·. For each of the optical fiber light sources constituting the optical fiber array light source or the optical fiber bundle light source, it is better that the laser light is multiplexed and then made incident on the optical fiber multiplexed laser light source. With a multiplexed laser light source, high brightness, high output, and exposure suitable for spatial light modulation elements can be obtained. In particular, semiconductor lasers with an oscillation wavelength of 350 nm to 450 nm are difficult to achieve high output from a single element, but they can be outputted by combining signals. In order to achieve the same light output, the number of arrayed optical fibers can be reduced, so the cost is low. In addition, since the number of optical fibers is small, the light emitting area change during arraying is small (higher brightness). For example, a fiber-optic light source is a light-collecting optics capable of condensing a plurality of semiconductor lasers, one optical fiber, and a laser beam emitted by the plurality of semiconductor lasers, and combining the collected light at the incident end of the optical fiber. System. Further, the optical fiber light source may include a multi-cavity laser array of a plurality of light emitting points arranged in a predetermined direction, one optical fiber, and a laser beam that emits each of the plurality of light emitting points and collects the light beams and combines the collected light beams in The light collecting optical system at the incident end of the optical fiber is configured. Furthermore, it is also possible to combine the laser beams emitted from the light emitting points of a plurality of multi-cavity lasers and combine them into one optical fiber. As for the spatial modulation element, a digital micromirror device (DMD) composed of a plurality of micromirrors in which a reflecting surface angle can be changed in accordance with each control signal can be used in a two-dimensional array on a substrate, or 2 A liquid crystal shutter array composed of a plurality of liquid crystal cells that can block transmitted light in response to each control signal is arranged in a dimensional shape. 1 16- 200405032 In addition, between the laser device and the space modulation element, it is preferably configured with: a collimating lens, so that the laser light (light beam) from the laser device becomes parallel light (parallel light beam); light quantity distribution The correction optical system changes the beam width at each exit position so that the ratio of the beam width at the periphery ^ _ to the beam width near the center of the optical axis is compared with the incident side. It becomes smaller, and the light quantity distribution of the laser light that is parallelized (parallel beam) by the collimator lens is formed on the illuminated surface of the spatial modulation element, and it is generally corrected. Based on this light quantity distribution correction optical system, for example, the light beam having the same beam width on the incident side becomes wider at the central portion of the outgoing side than the peripheral portion, while the beam width at the peripheral portion becomes smaller than the central portion. small. In this way, the light beam at the central portion can be generated toward the peripheral portion, so the utilization efficiency of light is not reduced as a whole, and the light amount distribution can illuminate the space modulation element with a slightly uniform light. Accordingly, no exposure spots occur on the surface to be exposed, and a high-quality exposure system is possible. Conventionally, an exposure device (ultraviolet exposure device) that exposes a photosensitive material with laser light in the ultraviolet region generally uses a gas laser such as argon laser and a THG (third harmonic) solid laser, but has a device It is a large, troublesome repair, and slow exposure. The exposure device of the present invention can be made into an ultraviolet exposure device by using a GaN (gallium nitride) -based semiconductor laser with a wavelength of 350 to 45 Onm in the laser device. According to this, compared with the conventional ultraviolet exposure apparatus, the ultraviolet exposure apparatus can achieve miniaturization and cost reduction of the apparatus, and can achieve partial speed exposure in time. In addition, in order to achieve the above-mentioned second object, the light shaping device of the present invention is characterized by having: a shaping groove 'accommodating a light-curable resin; and a support stand for supporting a shaped article which is provided in the shaping groove in a vertically movable manner; The exposure head includes: a laser device 'irradiates laser light; a spatial light modulation element arranged in a two-dimensional pattern on a substrate -17- 200405032. There are a plurality of pixel units that can change the light modulation state according to their respective control signals. It is used to modulate the laser light irradiated by the laser device. The control means uses a control signal generated by the corresponding exposure information to control a plurality of elements that are less than the total number of pixel units arranged on the substrate. Pixel unit; an optical system that images the laser light modulated in each pixel unit on the liquid surface of the photocurable resin housed in the forming groove; and a moving means to cause the exposure head to The liquid surface moves relatively. In the light shaping device of the present invention, the laser light modulated by each pixel portion of the spatial light modulation element of the exposure head is imaged on the liquid surface of the light-curable resin housed in the shaping defect, and simultaneously used The moving means relatively moves the exposure head to the liquid surface of the photocurable resin to scan and expose the liquid surface of the photocurable resin stored in the forming groove. The exposed resin is hardened to produce a hardened resin layer. After the hardened resin layer is formed into a single layer, the supporting table provided in the forming groove is used to support the shaped object to form a new resin surface, and a second hardened resin layer is similarly formed. In this way, the resin is hardened and lowered repeatedly, and the hardened resin layer is sequentially laminated to form a three-dimensional model. In the light shaping device of the present invention, the spatial light modulation element of the exposure head is based on a control signal generated in response to the exposure information to control a number that is less than the total number of pixel units arranged on the substrate. Each of the plurality of pixel units is different. That is, not all the pixel sections arranged on the substrate are controlled, but a part of the pixel sections is controlled. Therefore, the number of pixel units to be controlled is reduced, and the transfer speed of the control signal becomes shorter than that when the control signals of all the pixel units are transferred. According to this, the modulation speed can be accelerated to become a high-speed shape. In the light shaping device described above, the length of the pixel unit controlled by the control means in the direction corresponding to the specified direction is longer than the pixel unit included in the area longer than the length of the direction crossing the specified direction. good. The number of exposure heads to be used can be reduced by using the pixel portion of the long area in the direction in which the light emitting points are arranged in the laser device -18-200405032. Further, in the above-mentioned optical shaping device, the laser device may be configured to include a plurality of optical fiber light sources for emitting laser light incident from an incident end of the optical fiber from an emission end thereof, and The light emitting points are respectively arranged as a fiber array light source in a one-dimensional or two-dimensional array. It is also possible to construct a fiber bundle light source in which light emitting points in the emitting ends of the plurality of optical fiber light sources are arranged in a bundle. By arraying or bundling, high output can be achieved. For this optical fiber, it is preferable to use an optical fiber having a uniform core diameter and a cladding diameter at the exit end smaller than that at the entrance end. For each optical fiber light source constituting an optical fiber array light source or the like, a multiplexed laser light source that multiplexes laser light and enters the optical fiber is preferable. With a multiplexed laser light source, high brightness and high output can be obtained. In addition, since the number of arrayed optical fibers for obtaining the same light output can be resolved without requiring a large number, the cost is low. In addition, since the number of optical fibers is small, the light emitting area when the array is changed is small (higher brightness). Since the aforementioned optical fiber having a small cladding diameter is used, the light emitting area during arraying can be changed small and high brightness can be achieved. Even in the case where the spatial light modulation element is partially used, by using a high-brightness fiber array light source or a fiber bundle light source, it is possible to efficiently irradiate the laser light to the used part, especially for the NA modulation of the space modulation element. When it is smaller, the focal depth of the imaging beam after passing through the spatial modulation element can be deepened, and the laser light can be illuminated with high optical density. With this, high-speed and high-precision exposure and shaping systems are possible. For example, the formation of fine shapes of 1 # m grade is also possible. For example, an optical fiber light source may be constituted as follows: a plurality of semiconductor lasers; a plurality of semiconductor lasers; one optical fiber; and a light collection optical system for collecting the laser beams emitted from the plurality of semiconductor lasers, and The beam is bonded to this fiber-1 9- 200405032 incident end. Further, the optical fiber light source may be composed of a multi-cavity laser having a plurality of light emitting points; one optical fiber; and a light collecting optical system for collecting the laser beams emitted from the plurality of light emitting points and collecting the light. The light beam is coupled to the incident end of the fiber. Furthermore, the laser beams emitted from the light emitting points of a plurality of multi-cavity lasers may be collected and combined into one optical fiber. For the spatial modulation element used in the above-mentioned optical shaping device, a digital micromirror device (DMD) composed of a plurality of micromirrors arranged in a two-dimensional pattern on the substrate in which the angle of the reflecting surface can be changed in accordance with each control signal can be used. Or, a liquid crystal shutter array composed of a plurality of liquid crystal cells that can block transmitted light in accordance with each control signal is arranged in a two-dimensional manner on the substrate. Like DMD, by using a spatial light modulator with a large number of pixel sections, exposure is performed on a large number of channels to prevent power dispersion and thermal strain. For the laser device used in the above-mentioned optical shaping device, a laser light having a wavelength of 350 to 450 nm is preferred. For example, by using a GaN-based semiconductor laser for a semiconductor laser, a laser device that irradiates laser light with a wavelength of 350 to 450 nm can be configured. By using laser light having a wavelength of 350 to 450 nm, the light absorption of a photocurable resin can be greatly increased compared to a case where laser light in an infrared wavelength region is used. Laser light with a wavelength of 3 50 to 450 nm is a short wavelength, so the photon energy is large, and conversion into a thermal energy system is easy. In this way, the laser light system with a wavelength of 350 to 450 nm has a large light absorption rate and is easily converted into a thermal energy system. Therefore, the hardening of the photo-hardening resin can also be performed at a high speed. The wavelength band of the laser light is preferably 35 0 to 420 nm. In terms of utilizing a low-cost GaN-based semiconductor laser, a wavelength of 4 05 nm is particularly preferable. The above-mentioned optical shaping device can be configured as a multi-head type optical shaping device having a plurality of exposure heads. With the multi-head type, it is possible to achieve high-speed formation. In addition, in order to achieve the fourth object described above, the multilayer forming device of the present invention is characterized by:-20-Η · ί > 2 · 200405032 equipped with: a forming groove for storing powder to be sintered by light irradiation; a support table for supporting The forming slot is provided with a lifting object that can be raised and lowered; the exposure head includes: a laser device for irradiating laser light; a spatial light modulation element arranged in a two-dimensional manner on the substrate in accordance with the respective control signals to change the light modulation "Various state changes", several pixel units for modulating the laser light emitted by the laser device; control. Means, using the control signal generated by the corresponding exposure information to control a plurality of pixel units that are less than the total number of pixel units arranged on the substrate; the optical system adjusts each pixel unit The laser light is imaged on the surface of the powder contained in the forming groove; and the moving means causes the exposure head to relatively move the surface of the powder. ® In the multilayer forming device of the present invention, the laser light modulated by each pixel portion of the spatial light modulation element of the exposure head is imaged on the surface of the powder stored in the forming groove, and the exposure is performed by moving means The head relatively moves the surface of the powder to scan and expose the surface of the powder contained in the forming groove. The exposed powder is sintered and hardened to form a sintered layer. After forming a single sintered layer, a support table provided inside the mold to support the shaped object is lowered to form a new powder surface, and the next sintered layer is similarly formed. In this way, the sintering and the lowering of the supporting table are repeated, and the sintered layers are sequentially laminated to form a three-dimensional model. In the multi-layer @ shaping device of the present invention, the spatial light modulation element of the exposure head is controlled by using a control signal generated by corresponding exposure information, which is less than the total number of pixel units arranged on the substrate. Each pixel unit is plural. That is, not all the pixel sections arranged on the substrate are controlled, but a part of the pixel sections is controlled. Therefore, the number of pixel units to be controlled is reduced, and the transfer speed of the control signal becomes shorter than that when the control signals of all the pixel units are transferred. According to this, the speed of modulation can be accelerated and it can be made quickly. In the above-mentioned layer forming device, the pixel unit -21-200405032 controlled by the control means has a length corresponding to a direction of a specified direction included in a picture of an area longer than a length of a direction intersecting the specified direction. Those who are prime are better. By using a long pixel area in the alignment direction of the light emitting points of the laser device, the number of exposure heads to be used can be reduced. Further, in the multilayer forming device described above, the laser device may be configured to include a plurality of optical fiber light sources that emit laser light that is multiplexed into an incident end of an optical fiber from an exit end thereof, and that the plurality of optical fiber light sources emit light. The light emitting points in the end are each arranged as a fiber array light source in a one-dimensional or two-dimensional array. It is also possible to constitute a fiber-optic beam light source in which a plurality of light emitting points are arranged in a bundle at the emitting end of the plurality of optical fiber light sources. Arraying or bundling systems can achieve high output. For this optical fiber, it is preferable to use an optical fiber having a uniform core diameter and a cladding diameter at the exit end smaller than that at the entrance end. For each of the optical fiber light sources constituting the optical fiber array light source, etc., it is preferable that the laser light is multiplexed with the multiplexed laser light source incident on the optical fiber. With a multiplexed laser light source, high brightness and high output can be obtained. And the number of arrayed optical fibers used to obtain the same light output can be solved and the cost is low. In addition, since the number of optical fibers is small, the light emitting area during arraying is changed small (higher brightness). By using an optical fiber with a small cladding diameter as described above, the light emitting area during arraying can be changed to be small and high brightness can be achieved. Even when the spatial light modulation element is partially used, by using a high-brightness fiber array light source or a fiber bundle light source, laser light can be efficiently irradiated to the used part, especially for the space modulation element NA. When it is smaller, the focal depth of the imaging beam after passing through the spatial modulation element can be deepened, and the powder for sintering can be irradiated with laser light with high optical density. As a result, high-speed and high-definition exposure can be achieved. For example, it is also possible to create a fine shape with a level of 1 // m. For example, the optical fiber light source may be constituted as follows: a plurality of semiconductor lasers; a plurality of -22-200405032 semiconductor lasers; one optical fiber; and the respective laser beams emitted by the plurality of semiconductor lasers are collected and collected The light beam is coupled to a light collection optical system at the incident end of the optical fiber. In addition, the optical fiber light source may be configured as follows: a multi-cavity laser having a plurality of light emitting points; one optical fiber; and collecting the laser beams emitted by the plurality of light emitting points, and combining the collected light beams to A light collection optical system at the incident end of the optical fiber. Alternatively, the laser beams emitted from the light emitting points of the plurality of multi-cavity lasers may be collected and combined into a single optical fiber. For the spatial modulation element used in the above-mentioned multilayer forming device, a digital micromirror device (DMD) composed of a plurality of micromirrors arranged in a two-dimensional pattern on the substrate in which the angle of the reflecting surface can be changed according to each control signal can be used. Or, a liquid crystal shutter array composed of a plurality of liquid crystal cells that can block transmitted light in accordance with each control signal is arranged in a two-dimensional manner on the substrate. Like DMD, by using a spatial light modulator with a large number of pixel sections, exposure is performed on a large number of channels to prevent power dispersion and thermal strain. For the laser device used in the above-mentioned multilayer forming device, a laser light having a wavelength of 350 to 45 nm is preferred. For example, by using a GaN-based semiconductor laser for a semiconductor laser, a laser device that irradiates laser light with a wavelength of 350 to 450 nm can be configured. By using laser light having a wavelength of 350 to 450 nm, the light absorption rate of the powder for sintering can be greatly increased compared with the case where laser light having an infrared wavelength region is used. Especially in the case of metal powder, the light absorption rate is remarkably increased. Laser light having a wavelength of 350 to 450 nm is a short wavelength, so the photon energy system is large, so the sintering energy system for converting into a sintered powder is easy. Therefore, laser light with a wavelength of 350 ~ 450nm has a large light absorption rate, and it is easy to convert the sintering energy, so it is sintered for powder. That is, it can be shaped at high speed, and the powder for sintering can be irradiated with laser light with high light density. As a result, high-speed and high-definition exposures of -23-200405032 are achieved. For example, the formation of fine shapes of 1 // m order is also possible. For example, the optical fiber light source may be constituted as follows: a plurality of semiconductor lasers; a plurality of semiconductor lasers; one optical fiber; and a laser beam emitted from each of the plurality of semiconductor lasers is collected and the collected beams are combined A light collection optical system etc. to the incident end of the optical fiber. In addition, the optical fiber light source may be configured as follows: a multi-cavity laser having a plurality of light emitting points; one optical fiber; and collecting the laser beams emitted from the plurality of light emitting points and combining the collected light beams A light collection optical system to the incident end of the optical fiber. In addition, the laser beams emitted from the light emitting points of a plurality of multi-cavity lasers may be collected and combined into a single optical fiber. For the spatial modulation element used in the above-mentioned multilayer forming device, a digital micromirror device (DMD) composed of a plurality of micromirrors arranged in a two-dimensional pattern on the substrate in which the angle of the reflecting surface can be changed according to each control signal Or, a liquid crystal shutter array composed of a plurality of liquid crystal cells that can block transmitted light in accordance with each control signal is arranged in a two-dimensional manner on the substrate. Like DMD, by using a spatial light modulator with a large number of pixel sections, exposure is performed on a large number of channels to prevent power dispersion and thermal strain. In terms of the laser device used in the above-mentioned multilayer forming device, a laser light having a wavelength of 350 to 45 nm is preferred. For example, in the case of semiconductor lasers, a GaN-based semiconductor laser can be used to construct a laser device that irradiates laser light with a wavelength of 3 to 50 to 450 nm. By using laser light having a wavelength of 350 to 450 nm, the light absorption rate of the powder for sintering can be greatly increased compared with the case of using laser light having an infrared wavelength range. Especially in the case of metal powder, the light absorption rate is remarkably increased. Since the laser light having a wavelength of 350 to 450 nm is a short wavelength, the photon energy is large, and it is easy to convert the sintering energy used to sinter the powder. In this way, the laser light system with a wavelength of 350 to 450 nm has a high light absorption rate of 200405032 and is easily converted into sintering energy, so the sintering of the powder, that is, the forming system, can be performed at a high speed. The wavelength range of the laser light is preferably 350 to 420 nm. In the point of using a low-cost GaN-based semiconductor laser, the wavelength of 405 nm is particularly good. It is preferable that the laser device is driven by a pulse wave. The powder is exposed by pulsed laser light, because the diffusion of the heat generated by the emitted light can be prevented, and the light energy is effectively applied to the sintering of the powder and can be shaped at high speed. In addition, since thermal diffusion is prevented, it is possible to sinter the powder at the same size as the shape of the beam when irradiated, and a highly precise forming system with a smooth surface is possible. Therefore, the pulse width of laser light is better, lpsec ~ 100nsec is better, lpSec ~ 300psec is better. The multilayer forming apparatus described above may be configured as a multi-head multilayer forming apparatus having a plurality of exposure heads. The multi-head type can further increase the speed of shape. In order to achieve the above 6th and 7th objects, the method for forming a minute flow path according to the present invention is provided with an exposure process, and a wavelength of 3,500 nm is adjusted in space to correspond to the formation pattern data of the minute flow path. Laser light at 450 nm exposes the resist film formed on the substrate; in the patterning process, the resist film is partially removed in accordance with the exposure pattern to form a specified pattern resist film; uranium engraving process uses the specified pattern The resist film is etched from the surface and removed to form a minute flow path. In this method for forming a minute flow path, since laser light having a wavelength of 350 nm to 45 nm is used, it is not necessary to use an optical system of a special material such as an ultraviolet light of an excimer laser. Ground is a spatial light modulation device that can use DMD. Thereby, in response to the formation of the minute flow path, the pattern data 'can expose the resist film with laser light modulated in space. That is, 200405032 can expose a resist film in an arbitrary pattern at high speed and high definition for digital exposure. In this way, in the exposure process, since the resist film can be exposed to an arbitrary pattern at high speed and high precision, after the next patterning process and etching process, a minute flow path with an arbitrary pattern can be formed at high speed and high accuracy. Moreover, since it is digital exposure, it is not necessary to mask each pattern, and a minute flow path can be formed at low cost. In the above-mentioned exposure process system, a laser light source provided with laser light for irradiation and a plurality of pixel units having a light modulation state that changes according to respective control signals can be used to be arranged on a substrate in a rectangular shape and used to transfer the light from the light source. A spatial light modulation element that modulates laser light irradiated by the laser device, and an exposure head of an optical system that images the laser light modulated in each pixel portion on an exposure surface. Furthermore, by moving the exposure head relative to the exposure surface of the resist film in a direction crossing the specified direction, the resist film formed on the substrate can be scanned and exposed. In order to expose the barrier film more finely, the spatial light modulation element is arranged so that the arrangement direction of each pixel portion is slightly inclined at a specified angle 0 with the direction perpendicular to the sub-scanning direction. good. Thereby, it is possible to expose the beam diameter 1 0 // m with high precision with an addressing capability of 1 // m. The inclination angle 0 is preferably in a range of i to 5. ° Furthermore, on the exit side of the spatial modulation element, a microlens array is preferably provided for each pixel portion corresponding to the spatial modulation element and provided with microlenses that collect laser light in each pixel. When a microlens array is arranged, the laser light modulated in each pixel portion of the spatial modulation element collects light corresponding to each pixel in accordance with each microlens of the microlens array, so even in the exposed surface When the exposure area is enlarged, the size of each beam spot can also be reduced to perform high-definition exposure. According to the use of this reduction optical system, the beam diameter of 1 // m can be reduced by 0. The addressing capability of 1 # m is super high-resolution exposure. The high-definition exposure of the barrier film in this way can form a very smooth micro-flow-26-200405032 wall surface, which can reduce the flow path resistance to obtain a good size effect. In order to form a minute flow path with high accuracy, it is preferable that the thickness of the barrier film is thick. In the case of forming a micro flow path with a groove width of 1 0 // m to 50 // m, the thickness of the barrier film is preferably 10 // m to 50 // m, and 10 // m to 100 # m is more it is good. In particular, it is preferable that the resist film is formed by laminating a plurality of layers such as two layers and three layers and performing exposure. Because the resist film is digitally exposed, the digital fixed ratio function can be used to perform corrections such as stretching during exposure and after development with high accuracy. The exposure position of the first layer and the exposure position of multiple layers such as the second layer. Positioning system can be realized with high accuracy. As a result, a conventional double-thickness barrier film, a high-precision, high-aspect-ratio patterning system becomes possible, and uranium engraving can be used to form highly precise and deep minute flow paths. The so-called aspect ratio refers to the ratio a / b of the groove width a to the groove depth b of the groove formed by the resist film. In the exposure process of the above-mentioned formation method, by using a high-brightness light source to perform exposure at a deep focal depth, the barrier film can be exposed with higher accuracy. For a high-brightness light source, a plurality of laser light sources are multiplexed and a laser light source incident on the respective optical fiber is suitable. In addition, the exposure of a thick-film barrier film requires a high-output laser light source. Although semiconductor lasers with an oscillation wavelength of 350 to 450 nm are difficult to achieve high output with a single element, high output can be achieved by combining waves. The multiplexing laser light source system may be, for example: (1) a plurality of semiconductor lasers and an optical fiber, and collecting the laser light emitted by each of the plurality of semiconductor lasers so that the collected light beams are combined to the (2) a multi-cavity laser having a plurality of light emitting points, and an optical fiber, and collecting the laser light emitted by each of the plurality of light emitting points, The composition of the light-collecting optical system that combines the light-concentrating beam to the incident end of the optical fiber; or (3) includes a plurality of multi-cavity lasers and an optical fiber, and the plurality of the plurality of multi-cavity lasers Laser-27-200405032 light emitted by each luminous point collects light, so that the collected light is combined with the light collecting optical system of the incident end of the optical fiber. The light emitting points in the emitting ends of the optical fibers of the above-mentioned multiplexed laser light source can be arrayed as an optical fiber array light source, and the light emitting points can be respectively arranged, and the light beams can be aligned as a fiber bundle light source. In order to achieve higher brightness, it is preferable to use an optical fiber with a uniform core diameter and a smaller cladding diameter at the output end than the cladding diameter at the input end. The point diameter becomes smaller. The cladding diameter of the fiber exit end is better than 125 // m, especially below 80 // m, especially below 60 // m. · The core diameter is uniform and exit The cladding diameter at the end is smaller than the diameter of the cladding at the entrance end. For example, a plurality of optical fibers with the same core diameter and different cladding diameters can be combined to form the optical fiber system. The light-emitting area is smaller and high-brightness can be achieved. Furthermore, by connecting a plurality of optical fibers so that they can be attached to and detached from the connector, the exchange system becomes easier when the light source module is partially damaged. In particular, Where the above-mentioned spatial light modulation element is arranged obliquely and a reduced optical system or an equal optical system is used to perform ultra-high-definition exposure, the aforementioned high-brightness light is used. Fiber array light source or fiber bundle light source, because the lighting NA of the space modulation element can be set small, so the focal depth of the imaging beam after the space modulation element can be taken deep, and the deep focus depth can be obtained. The internal beam will not be too wide, but will become a pattern with higher precision and high aspect ratio. In addition, when an inclined flow path is formed with an inclined wall surface, a smooth pattern can be obtained. In the above-mentioned exposure process, for example, the laser light is irradiated on the substrate, and there are a plurality of daylight cells in which the light modulation state changes in accordance with each control fg number. -28-200405032 Each pixel portion of the modulation element is modulated. As a spatial modulation element, a micromirror device (DMD; digital micro-mirror) composed of a plurality of micromirrors that can change the angle of the reflecting surface in response to each control signal can be used on a substrate (for example, a silicon substrate). Mirror device). In addition, the spatial modulation element may be configured as a one-dimensional grating formed by arranging a plurality of movable lattices having a strip-shaped reflecting surface and movable in response to a control signal and a fixed lattice having a strip-shaped reflecting surface in parallel. Light bulb (GLV). Alternatively, a liquid crystal mask array composed of a plurality of liquid crystal cells arranged in a two-dimensional pattern on the substrate and capable of blocking transmitted light in response to each control signal may be used. On the emission side of these spatial modulation elements, it is preferable that a microlens array is provided which is provided with each pixel portion corresponding to the spatial modulation element and includes microlenses for collecting laser light at each pixel. When a microlens array is arranged, the laser light modulated in each pixel portion of the spatial modulation element is collected by the microlenses of the microlens array so as to correspond to each pixel. When the exposure area is enlarged, the size of each beam spot can be reduced, and high-definition exposure can be performed even in a large area. In order to achieve the eighth and ninth objects, the bleaching device of the present invention includes: a chemical liquid impregnation means for immersing the fibers before dyeing in a chemical liquid containing an oxidizing agent or a reducing agent; and a laser irradiation means including a combination wave A laser light source includes a plurality of semiconductor lasers, one optical fiber, and light collection optics for collecting the laser beams emitted by the plurality of semiconductor lasers, so that the collected beams are combined at the incident end of the optical fiber. System, and irradiate the cloth impregnated with the chemical liquid with a pulse wave of laser light having a wavelength of 200 nm to 450 nm. In the bleaching treatment device of the present invention, a chemical solution containing an oxidizing agent or a reducing agent is impregnated into the fibers before dyeing by using a chemical solution impregnation method. Next, the pulse wave of the impregnating chemical solution is irradiated with a laser beam having a wavelength of 2000 nm to 450 nm from a laser irradiation means. The multiplexed laser light source is provided with: a plurality of semiconductor lasers; one optical fiber; and a laser beam emitted from each of the plurality of semiconductor lasers is collected, and the collected beam is coupled to an incident end of the optical fiber The collection of optical systems. This multiplexed laser light source uses a fiber to combine a plurality of laser beams, and has high output and high brightness. The laser irradiation means is provided with such a high output and high brightness multiplexing laser light source. Therefore, in the bleaching treatment apparatus of the present invention, it is possible to easily obtain the high energy density necessary for the bleaching treatment. In addition, the multiplexed laser light source is composed of a semiconductor laser that can be continuously driven and has excellent output stability. Therefore, it can irradiate laser light with a short pulse wave, high energy efficiency, and can perform bleaching at high speed. Compared with molecular laser devices, maintenance is easier and less expensive. In the above-mentioned bleaching device, the wavelength of the laser light irradiated by the laser irradiation means is a gallium nitride (GaN) -based semiconductor laser capable of obtaining a high output from the viewpoint of promoting the bleaching process to achieve high speed. The range of 350nm ~ 450nm is better. In particular, a wavelength in the range of 400 nm to 415 nm, where GaN-based semiconductor lasers are most likely to have high output, is preferred. In addition, in order to reduce the damage of the fiber from the viewpoint of improving the bleachability, §, a wavelength of 200 nm to 350 nm is preferable. In addition, from the viewpoint of not using an optical system using a special material, reducing the cost of the device, and performing high-speed processing, a wavelength longer than 400 nm is preferable. In addition, the GaN-based semiconductor laser has a common combination, so the mobility of transfer is very small compared to the GaAs-based or AIGalnP-based systems, and the thermal conductivity is very large compared to the GaAs-based or AIGalnP-based systems. With high COD (optical damage) level. Therefore, even in the case of pulse wave driving, high output can be obtained. As a result, a short pulse wave can be obtained with a peak-to-peak power of 200405032 and a high output of several 100mW to several 10W. According to this, the energy rate can be made as small as about 0 to 10%, and high energy density can be obtained, and damage to the fiber due to heat can be reduced. The above-mentioned combined laser light source may also be provided with: a semiconductor laser having a plurality of light emitting points; one optical fiber; and a plurality of light emitting points for emitting light from the semiconductor laser having the plurality of light emitting points. The laser beam is collected, and a light collection optical system is formed by combining the collected light beam with the incident end of the optical fiber. For example, for a semiconductor laser having a plurality of light emitting points, a multi-cavity laser can be used. Further, for the optical fiber of the multiplexing laser light source, it is preferable to use an optical fiber having a uniform core diameter and a cladding diameter at the exit end which is smaller than the cladding diameter at the entrance end. By making the diameter of the cladding at the emitting end small, it is possible to achieve high brightness of the light source. From the viewpoint of setting the diameter of the light emitting point small, the diameter of the cladding at the exit end of the optical fiber is better than 125 // m, more preferably less than 80 // m, and particularly preferably less than 60 // m. An optical fiber system having a uniform core diameter and a smaller cladding diameter at the exit end than the cladding diameter at the entrance end can be formed by combining a plurality of optical fibers with the same core diameter and different cladding diameters. According to this, the light emitting area during the array can be changed small, and the brightness can be increased. In addition, the connector is configured to detachably connect a plurality of optical fibers, so that the light source can be easily exchanged when the light source is partially damaged. The above-mentioned laser irradiation means may be constituted by including a plurality of multiplexed laser light sources. For example, a fiber array light source configured by arranging light emitting points (outgoing ends of optical fibers) of a multiplex laser light source in a plurality of arrays or a fiber bundle light source that bundles light emitting points of a multiplex laser light source. For the optical fiber array light source or the optical fiber bundle light source, since a plurality of optical fibers are bundled to form a light source, a higher output system is possible. Thereby, a high-brightness light source can be obtained at a low cost, and a high-brightness imaging beam with a deep focus depth can be obtained, so the laser bleaching at high speed -31- 200405032 processing system becomes possible. [Embodiment] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. (First Embodiment) The first embodiment is an embodiment of an exposure device having an exposure head for exposing a photosensitive material with a light beam modulated by a spatial light sacrifice element in response to day image data. [Structure of Exposure Apparatus] As shown in FIG. 1, the exposure apparatus according to the embodiment of the present invention is provided with a flat-plate stage 1 5 that adsorbs and holds a sheet-shaped photosensitive material i 5 〇 on the surface. 2. On the upper surface of the thick plate-shaped setting table 156 supported by the four leg portions 154, there are provided two guide portions 158 extending along the moving direction of the stage. The stage 152 is arranged so that its longitudinal direction is toward the movement direction of the stage, and is supported by the guide portion 158 so as to be reciprocally movable. In addition, here, the exposure device is provided with a driving device (not shown) for driving the stage 152 along the guide portion 158. In the center of the installation table 156, a gate 160 in the shape of a movement path across the stage 152 is provided. The end portions of the gates 160 are fixed to both sides of the mounting table 156, respectively. The shutter 160 is held and a scanner 16 is provided on one side. The other side is provided with a plurality of detection sensors 164 for detecting the front end and the rear end of the photosensitive material 150 (for example, two). The scanner 62 and the detection sensor 16 are respectively located at the door 160 by a woman and fixedly arranged above the moving path of the stage 152. In addition, the scanner 162 and the detection sensor 164 are connected to a controller (not shown) for controlling these. As shown in FIG. 2 and FIG. 3 (B), the scanner 162 is provided with a plurality of (e.g., 14) arrays of approximately matrix rows with m rows and η columns (for example, 3 rows and 5 columns): price -32 -200405032 Exposure head 166. In this example, because of the relationship with the width of the photosensitive material 150, four exposure heads 166 are arranged in the third line. When the exposure heads arranged in the m-th row and the n-th column are shown, the exposure heads are shown as 166mn. The exposure area 1 68 according to the exposure head 1 66 has a rectangular shape with the short sides in the sub-scanning direction. Therefore, as the stage 152 moves, the photosensitive material 150 is formed with the strip-shaped exposed areas 170 of the respective exposure heads 166. In addition, when the exposure areas of the respective exposure heads arranged in the m-th row and the n-th column are shown, the exposure areas are 168mn. As shown in FIGS. 3 (A) and 3 (B), the strip-shaped exposed areas 170 are arranged in a direction orthogonal to the sub-scanning direction without gaps, and the exposure heads of each line arranged in a line are each The arrangement direction is shifted at a predetermined interval (a natural number multiple of the long side of the exposure area, which is two times in this embodiment). Therefore, the unexposed portion between the exposed area 168n and the exposed area 16812 of the first line can be exposed according to the exposed area 1 6821 of the second line and the exposed area 1 6831 of the third line. The exposure heads 166u to 166mn are each provided with a digital micromirror device (DMD) 50 as shown in Figs. 4, 5 (A) and 5 (B), and the incident light beam is adapted to each pixel according to the image data. Modulated spatial light modulation element. This DMD50 is connected to a controller with a data processing section and a mirror drive control section (not shown). The data processing unit of this controller generates control signals for driving and controlling each micromirror in the control region of the DMD 50 of each exposure head 166 based on the input image data. In addition, the area to be controlled is described later. The mirror drive control unit controls the angle of the reflection surface of each micromirror of the DMD 50 of each exposure head 166 based on a control signal generated by the image data processing unit. In addition, the angle control of the reflecting surface will be described later -33-200405032. The light incident side of DMD 50 is arranged in the following order: that is, the exit ends (light emitting points) provided with optical fibers are arranged in a line along the direction corresponding to the long side direction of the exposed area 1 68. A fiber array light source 66; a lens system 67 for correcting the laser light emitted from the fiber array light source 66 to collect light on the DMD; and a mirror 69 for reflecting the laser light of the transmission lens system 67 toward the DMD 50. The lens system 67 is a pair of combined lenses 71 that parallelizes the laser light emitted by the optical fiber array light source 66 and a pair of combined lenses 73 that makes the light amount distribution of the parallelized laser light uniform. And a light collecting lens 75 for collecting the laser light whose light distribution is corrected on the DMD. The combination lens 73 is provided with the alignment direction of the laser emitting end, the portion close to the optical axis of the lens is an enlarged beam and the portion away from the optical axis is a beam reduction, and the illumination is in a direction orthogonal to the alignment direction. Through this function, the light amount distribution can be used to uniformly correct the laser light. Alternatively, an optical system such as a fly-eye lens or a rod integrator may be used to uniformize the light amount distribution. Further, on the light reflection side of the DMD 50, lens systems 54 and 58 for forming laser light reflected by the DMD 50 on the scanning surface (exposed surface) 56 of the photosensitive material 150 are arranged. The lens systems 54 and 58 are arranged so that the DMD 50 and the exposed surface 56 are in a conjugate relationship. As shown in FIG. 6, DMD50 is configured on a SRAM cell (memory cell) 60, and a micromirror (micromirror) 62 is supported by a pillar, and is configured by a plurality of pixels (for example, PIXEL) (600 x 800) micro-mirror mirror arrangement. The uppermost part of each pixel is provided with a micromirror 62 supported by a pillar, and the surface of the micromirror 62 is vapor-deposited with a highly reflective material such as aluminum. The reflectance of the micromirror 62 is 90% or more. And directly below the micromirror 62 is a CMOS SRAM cell 60 equipped with a sand gate manufactured in a general semiconductor memory 200405032 production line through a pillar including a hinge and a yoke. The entire system is configured as a single block (integrated type) ). When a digital signal is written into the SRAM cell 60 of the DMD50, the micromirror 62 supported by the pillar is centered on the diagonal line, and is relative to the substrate side on which the DMD50 is disposed, at an angle of α degrees (for example, controlled by 10 degrees ) The range is tilted. Fig. 7 (A) shows a state in which the tilt of the micromirror 62 in the open state is + α degrees, and Fig. 7 (B) shows a state in which the tilt of the micromirror 62 2 is -α degrees in the closed state. Therefore, according to the image signal, by controlling the tilt of the micromirror 62 of each pixel in the DMD 50 as shown in Fig. 6, the light incident on the DMD 50 is reflected toward the tilt direction of the respective micromirror 62. Fig. 6 is an enlarged view of a part of the DMD 50, and shows an example of a state in which the micro mirror 62 is controlled by + α degree or -α degree. The on / off control of the respective micromirrors 62 is performed by a controller (not shown) connected to the DMD 50. In addition, a light absorber (not shown) is arranged in the direction in which the micromirror 62 in the closed state and the light beam is reflected. The DMD50 is preferably arranged so that its short side is slightly inclined at a predetermined angle 0 (for example, 1 ° to 5 °) with respect to the sub-scanning direction. Figure 8 (A) shows the scanning trace of the reflected light image (exposure beam) 53 of each micromirror when the DMD50 is not tilted, and Figure 8 (B) shows the scanning trace of the exposure beam 53 when the DMD50 is tilted. In DMD50 0, a micromirror array in which a plurality of micromirrors (for example, 800) are arranged in the length direction is provided with multiple arrays (for example, 600 groups) in the width direction, as shown in FIG. 8 (B). By tilting the DMD50, the pitch Pi of the scanning trace (scanning line) according to the exposure beam 53 of each micromirror becomes narrower than the pitch P2 of the scanning line when the DMD50 is not tilted, which can greatly improve the resolution. On the one hand, because the tilt angle of the DMD50 is small, the scan width W04 when the DMD50 is tilted is slightly the same as the scan width W1 when the DMD50 is not tilted. In addition, different micro-mirror arrays and the same scanning line are overlapped and exposed (multiple exposures). In this way, by being multiple-exposed, a small amount of the exposure position can be controlled, and high-definition exposure can be achieved. In addition, with a small amount of digital day image processing such as exposure position control, it is possible to link the connection points between the plurality of exposure heads arranged in the main scanning direction without any steps. In addition, instead of the inclination of the DMD50, the micromirror columns are arranged in a direction orthogonal to the sub-scanning direction, and are arranged in a checkerboard arrangement with a specified interval offset, and the same effect can be obtained. The optical fiber array light source 66, as shown in FIG. 9 (A), includes a plurality (for example, six) of laser modules 64, and each laser module 64 is coupled to one end of the multimode fiber 30. The other end of the multi-mode optical fiber 30 is combined with an optical fiber 31 having a core diameter that is the same as that of the multi-mode optical fiber 30 and a small cladding fiber 30. As shown in FIG. 9 (C), the optical fiber 31 The emitting end portion (light emitting point) is arranged in a row along the main scanning direction orthogonal to the sub-scanning direction to constitute a laser emitting portion 68. In addition, as shown in FIG. 9 (D), the light emitting points may be arranged in two rows along the main scanning direction. The exit end of the optical fiber 31 is as shown in Fig. 9 (B), and the surface is held by two flat support plates 65 and fixed. A light-emitting side of the optical fiber 31 is provided with a transparent protective plate 63 such as glass to protect the end face of the optical fiber 31. The protective plate 63 may be disposed in close contact with the end surface of the optical fiber 31, or the end surface of the optical fiber 31 may be disposed in a sealed manner. Although the exit end portion of the optical fiber 31 is optically dense and easily degraded due to dust collection, by disposing the protection plate 63, it is possible to prevent the adhesion of angstroms to the end surface and delay the deterioration. In this example, in order to arrange the exit end of the optical fiber 31 with a small cladding diameter to 1 歹 [J, the multimode optical fiber 30 200405032 is adjacent between two multimode optical fibers 30 with a large cladding diameter. The optical fiber 30 is gathered, and the exit end of the optical fiber 3 1 combined by the gathered multi-mode optical fiber 30 is arranged to be the optical fiber 3 combined by two multi-mode optical fibers 30 that are adjacent to each other with a large cladding diameter. Between 1 and 2 exit ends. Such an optical fiber is, for example, as shown in FIG. 10, a fiber 31 having a small cladding diameter of 1 to 30 cm in length is provided at the front end portion of the laser light exit side of the multimode fiber 30 having a large cladding diameter Available coaxially. The incident end faces of the two optical fiber-based optical fibers 31 are fused to each other at the exit end face of the multimode optical fiber 30 with the central axes of the two fibers uniformly joined. As described above, the diameter of the core 31a of the optical fiber 31 is the same as the diameter of the core 30a of the multimode optical fiber 30. Alternatively, a short-sized fiber with a small cladding diameter and a fiber with a short cladding diameter and a large cladding diameter may be fused to the outgoing end of the multimode fiber 30 via a set of loops or optical connectors. By detachably combining with a connector or the like, when the optical fiber with a small cladding diameter is damaged, the front-end part can be exchanged easily, and the cost required for maintenance of the exposure head can be reduced. In addition, hereinafter, the optical fiber 31 is sometimes referred to as an output end portion of the multimode optical fiber 30. The multimode optical fiber 30 and the optical fiber 31 may be any of STEP INDEX type optical fiber, GRATED INDEX type optical fiber, and composite type optical fiber. For example, a STEP INDEX type optical fiber manufactured by Mitsubishi Electric Industries, Ltd. can be used. In this embodiment, the multimode optical fiber 30 and the optical fiber 31 are STEP INDEX type optical fibers, and the multimode optical fiber 30 is a cladding diameter = 125 // m, a core diameter = 25 // m, and NA = 0. 2. The transmittance of the incident end-face coating is more than 99 · 5%, the diameter of the cladding of the optical fiber 31 series is 60 // m, the core diameter is 25em, and NA = 0. 2.
一般，以紅外線區域的雷射光而言，若光纖的包層直徑設定 小則傳送損失會增加。因此，係因應雷射光之波長帶域以決 定合適的包層直徑。然而，波長越短傳送損失係變少，以由GaN 200405032 系半導體雷射所出射的波長4 0 5 nm之雷射光而言，即使包層 的厚度{(包層直徑-核心直徑）/2丨爲傳送800nm之波長帶 域的紅外光時之1/2左右、或爲傳送通信用之1.5 之波長 頻帶的紅外光時之約1/4,傳送損失也幾乎不會增加。因此， 可把包層直徑設小成爲60 // m。藉由使用GaN系的LD而可 容易獲得光密度高之光束。 但是，光纖31的包層直徑不限定爲60//m。以往在光纖光 源所使用之光纖的包層直徑爲1 25 // m，但是包層直徑越小則 焦點深度係變越深，所以多模光纖的包層直徑係80 // m以下 較好，60//m以下更好，40 μ m以下更佳。一方面，核心直徑有 必要至少爲3〜4//m,所以光纖31的包層直徑係10 以上 較佳。 雷射模組64係由第1 1圖所示之合波雷射光源（光纖光源） 所構成。此合波雷射光源係由如下所構成：β卩，配列固定在 熱塊10上之複數（例如7個）個晶片狀之橫多模或單模之 GaN 系半導體雷射 LD1、LD2、LD3、LD4、LD5、LD6、及 LD7 ; 對應GaN系半導體雷射LD1〜LD7各自而設置之准直透鏡 11、12、13、14、15、16、及 17 ; 1 個集光透鏡 20 ; 1 條多 模光纖30。此外，半導體雷射之個數不受限爲7個。例如，包 層直徑=60//m、核心直徑二50//m、NA= 0.2的多模光纖係 可入射20多個半導體雷射光，實現曝光頭5之必要光量，且 可將光纖條數減爲更少。Generally, in the case of laser light in the infrared region, if the cladding diameter of the optical fiber is set to be small, the transmission loss increases. Therefore, the appropriate cladding diameter is determined according to the wavelength band of the laser light. However, the transmission loss decreases with shorter wavelengths. For laser light with a wavelength of 4 5 nm emitted by a GaN 200405032 series semiconductor laser, even the thickness of the cladding {(cladding diameter-core diameter) / 2 丨For transmitting about 1/2 of the infrared light in the wavelength band of 800nm or about 1/4 of the infrared light in the wavelength band of 1.5 for communication, the transmission loss hardly increases. Therefore, the cladding diameter can be set to 60 // m. By using a GaN-based LD, a light beam having a high optical density can be easily obtained. However, the cladding diameter of the optical fiber 31 is not limited to 60 // m. In the past, the cladding diameter of the optical fiber used in the optical fiber light source was 1 25 // m, but the smaller the cladding diameter, the deeper the focal depth system, so the cladding diameter of the multimode fiber is preferably below 80 // m. 60 // m or less is more preferable, and 40 μm or less is more preferable. On the one hand, the core diameter must be at least 3 to 4 // m, so the cladding diameter of the optical fiber 31 is preferably 10 or more. The laser module 64 is composed of a multiplexed laser light source (optical fiber light source) shown in FIG. 11. This multiplexing laser light source is composed of: β 卩, a plurality of (for example, 7) wafer-shaped horizontal multimode or single-mode GaN semiconductor lasers LD1, LD2, LD3 fixed on the thermal block 10 , LD4, LD5, LD6, and LD7; Collimating lenses 11, 12, 13, 14, 15, 16, and 17 provided for each of the GaN-based semiconductor lasers LD1 to LD7; 1 collecting lens 20; 1 Multimode fiber 30. In addition, the number of semiconductor lasers is not limited to seven. For example, a multimode optical fiber with a cladding diameter = 60 // m, a core diameter of 50 // m, and NA = 0.2 can enter more than 20 semiconductor lasers to achieve the necessary amount of light for the exposure head 5 and the number of optical fibers Reduced to less.
GaN系半導體雷射LD1〜LD7係振盪波長全部共通（例 如，40 5nm)，最大輸出也全部共通（例如，多模雷射爲lOOmw、 單模雷射爲30mW)。此外，以GaN系半導體雷射LD1〜LD7 而言，在350nm〜450nm的波長範圍，也可使用具備有上述之 200405032 405nm以外的振盪波長之雷射。 上述之合波雷射光源係如第1 2及1 3圖所示，連同其他光 學要素一起被收納在上方有開口之箱狀的封裝4q內。封裝 4 0係具備有關閉其開口般所作成之封裝蓋4 1，在脫氣處理後 導入封止氣體，藉由把封裝40之開口以封裝蓋4 1閉合，而 在由封裝4 0和封裝蓋41所形成之閉空間（封止空間）內， 氣密封止上述合波雷射光源。 在封裝40的底面係固定有基板42,此基板42的上面係安 裝有：該熱塊1 0 ;保持集光透鏡2 0的集光透鏡保持器；以 及用以保持多模光纖3 0的入射端部之光纖保持器4 6。多模 光纖30的出射端部係由形成於封裝40之壁面的開口被引出 至封裝外。 又，在熱塊10的側面係安裝有准直透鏡保持器44,准直透 鏡11〜17係被保持著。在封裝40之橫壁面形成有開口，通 過此開口，用以對GaN系半導體雷射LD1〜LD7供給驅動電 流的配線47係被引出至封裝外。 此外，在第13圖中，爲避免圖面之煩雜化，僅由複數個GaN 系半導體雷射之中、對GaN系半導體雷射LD7附加編號，複 數個准直透鏡之中僅對賦予准直透鏡17附加編號。 第14圖係表示上述准直透鏡11〜17之安裝部分的正面形 狀。准直透鏡11〜17係各自形成爲以平行的平面，細長地切 取包含有具備非球面的圓形透鏡之光軸的區域。此細長形狀 的准直透鏡，例如係可藉由將樹脂或光學玻璃予以模製成形 而形成。准直透鏡11〜17係，長度方向爲與GaN系半導體雷 射LD1〜LD7之發光點的配列方向（第14圖之左右方向） 成正交般地被密接配置在上述發光點之配列方向。 -39- 200405032 一方面，以GaN系半導體雷射LD1〜LD7而言，係使用具備 發光寬度爲2 // m的活性層，與活性層平行的方向、直角的方 向之視角各自爲例如1 0° 、3 0°的狀態之發射各個雷射光束 B1〜B7之雷射。此等GaN系半導體雷射LD1〜LD7係在與 活性層平行的方向上發光點成1列排列地配設著。 因此，由各發光點所發出之雷射光束B1〜B7係如上述般、 對細長形狀之各准直透鏡1 1〜1 7,係成爲以視角角度爲大的 方向與長度方向一致，視角角度爲小的方向係與寬度方向 (與長度方向正交之方向）一致的狀態入射。亦即，各准直 透鏡11〜17之寬度爲1.1mm、長度爲4.6mm，入射至此等之 雷射光束B1〜B7的水平方向、垂直方向的光束直徑係各自 爲0.9mm、2.6mm。又，准直透鏡11〜17係各自爲焦點距離h =3mm、NA = 0.6、透鏡配置間距=1.25mm。 集光透鏡20,係以平行的平面，細長地切取包含有具備非球 面之圓形透鏡的光軸之區域，准直透鏡1 1〜1 7的配列方向， 亦即形成爲在水平方向爲長、且在與其垂直的方向爲短的形 狀。此集光透鏡20係焦點距離f2= 23mm、NA= 0.2。此集 光透鏡20也係藉由例如將樹脂或光學玻璃予以模製成形而 形成。 〔曝光裝置之動作〕 以下，針對上述曝光裝置的動作加以說明。 在掃描器162之各曝光頭166,由構成光纖陣列光源66之 合波雷射光源的GaN系半導體雷射LD1〜LD7各自以發散光 狀態所出射之雷射光束m、B2、B3、B4、B5、B6、及B7 各自係由對應的准直透鏡11〜1 7而被平行光化。被平行光 化之雷射光束B1〜B7係由集光透鏡20所集光而收束至多模 -40- 200405032 光纖30之核心30a的入射端面。 本例中，由准直透鏡11〜17及集光透鏡20構成了集光光 學系統，由其集光光學系統和多模光纖30而構成合波光學系 統。亦即，利用集光透鏡2 0、如同上述之被集光之雷射光束 B1〜B7係入射至此多模光纖30之核心30a以在光纖內傳送， 而被合波成1條雷射光束B再由結合至多模光纖30之出射 端部的光纖3 1出射。All GaN-based semiconductor lasers LD1 to LD7 have the same oscillation wavelength (for example, 40 5nm), and the maximum output is also common (for example, multimode laser is 100mw, and single-mode laser is 30mW). In addition, for GaN-based semiconductor lasers LD1 to LD7, lasers having an oscillation wavelength other than the above-mentioned 200405032 405nm can be used in a wavelength range of 350nm to 450nm. The above-mentioned multiplexed laser light source is housed in a box-shaped package 4q with an opening above, as shown in Figs. 12 and 13 together with other optical elements. The package 40 is provided with a package cover 41 made by closing its opening. After the degassing process, a sealing gas is introduced. The opening of the package 40 is closed with the package cover 41, and the package 40 and the package are closed. In the closed space (sealed space) formed by the cover 41, the above-mentioned combined laser light source is hermetically sealed. A base plate 42 is fixed to the bottom surface of the package 40, and the upper surface of the base plate 42 is mounted with: the heat block 10; a light collecting lens holder holding the light collecting lens 20; and an incident light for holding the multimode optical fiber 30 End of the fiber holder 46. The exit end of the multimode optical fiber 30 is led out of the package through an opening formed in the wall surface of the package 40. A collimating lens holder 44 is attached to the side surface of the heat block 10, and the collimating lenses 11 to 17 are held. An opening is formed in the lateral wall surface of the package 40. Through this opening, a wiring 47 for supplying a driving current to the GaN-based semiconductor lasers LD1 to LD7 is led out of the package. In addition, in FIG. 13, in order to avoid complication of the drawing, the GaN-based semiconductor laser LD7 is numbered only among the plurality of GaN-based semiconductor lasers, and only the collimation lens is provided with collimation The lens 17 is numbered. Fig. 14 shows the front shape of the mounting portions of the collimating lenses 11 to 17 described above. The collimating lenses 11 to 17 are each formed so as to slenderly cut a region including an optical axis of a circular lens having an aspherical surface in a parallel plane. This elongated collimating lens can be formed, for example, by molding a resin or an optical glass. The collimating lenses 11 to 17 are arranged in close contact with the alignment direction of the light emitting points of the GaN-based semiconductor lasers LD1 to LD7 (the left and right directions in FIG. 14) in a longitudinal direction. -39- 200405032 On the one hand, in the case of GaN-based semiconductor lasers LD1 to LD7, an active layer having an emission width of 2 // m is used, and the viewing angles of the direction parallel to the active layer and the right-angle direction are, for example, 1 0. °, 30 °, the laser beams of each laser beam B1 ~ B7 are emitted. These GaN-based semiconductor lasers LD1 to LD7 are arranged in a row in a row in a direction parallel to the active layer. Therefore, as described above, the laser beams B1 to B7 emitted from the light-emitting points are aligned to the elongated collimator lenses 1 1 to 1 7 as described above, and the directions in which the viewing angle is large are consistent with the longitudinal direction, and the viewing angle is The small direction is incident in a state that coincides with the width direction (the direction orthogonal to the length direction). That is, each of the collimating lenses 11 to 17 has a width of 1.1 mm and a length of 4.6 mm. The horizontal and vertical beam diameters of the laser beams B1 to B7 incident thereto are 0.9 mm and 2.6 mm, respectively. The collimating lenses 11 to 17 each have a focal distance h = 3 mm, NA = 0.6, and a lens arrangement pitch = 1.25 mm. The light-collecting lens 20 is a slender cutout of a region including an optical axis of a circular lens having an aspherical surface in a parallel plane, and the alignment directions of the collimating lenses 1 1 to 17 are formed to be long in the horizontal direction. And is short in the direction perpendicular to it. The focusing lens 20 has a focal distance f2 = 23 mm and NA = 0.2. This condensing lens 20 is also formed by, for example, molding a resin or an optical glass. [Operation of Exposure Device] Hereinafter, the operation of the exposure device will be described. In each of the exposure heads 166 of the scanner 162, laser beams m, B2, B3, B4 and B5, B6, and B7 are each parallelized by the corresponding collimating lenses 11 to 17. The collimated laser beams B1 to B7 are collected by the light collecting lens 20 and converged to the incident end face of the core 30a of the multimode -40-200405032 optical fiber 30. In this example, a collimating optical system is constituted by the collimating lenses 11 to 17 and a condensing lens 20, and a combining optical system is constituted by the condensing optical system and the multimode optical fiber 30. That is, the collected laser beams B1 to B7, which are collected as described above, are incident on the core 30a of the multimode optical fiber 30 to be transmitted in the optical fiber, and are multiplexed into one laser beam B. Then, the optical fiber 31 bonded to the exit end of the multimode optical fiber 30 is emitted.
於各雷射模組中，雷射光束B1〜B7對多模光纖30之結合 效率係0.85、且GaN系半導體雷射LD1〜LD7之各輸出爲 3 0mW時，被陣列狀配列的各光纖31係可獲得輸出約180mW (=30Mwx 0·85χ 7 )之合波雷射光束B。因此，以陣列配列 有6條光纖31的雷射出射部68之輸出約爲1W ( = 180mW X 6 ) 〇 光纖陣列光源66之雷射出射部68上係沿著主掃描方向呈 一列地配列有此種高亮度之發光點。由於把來自單一半導體 雷射之雷射光結合至1條光纖之以往的光纖光源係低輸出， 所以若未配列多數列則不能獲得所期望的輸出，但在本實施 形態所使用之合波雷射光源係高輸出，所以少數列，例如即使 1列也可獲得所期望的輸出。 例如，在將半導體雷射和光纖以1對1結合之以往的光纖 光源中，通常，以半導體雷射而言，係使用輸出爲30mW (毫 瓦）程度之雷射，以光纖而言，因爲係使用核心直徑50 μ m、 包層直徑125 // m、ΝΑ (開口數）0.2之多模光纖，所以若欲 獲得約1W (瓦）的輸出，則多模光纖必需把48條（8x 6 ) 成一束，發光區域之面積爲0.62mm2 ( 0.675mmx 0.925mm)， 所以在雷射出射部68之亮度爲1.6x 106 ( W/m2)，每1條光 200405032 纖之亮度爲3·2χ 106 ( W/m2)。 相對地，在本實施形態中，如同上述，以多模光纖6條約可獲 得1 1V的輸出，在雷射出射部6 8之發光區域的面積爲 0.008 1mm2 ( 0.325mmx 0.025mm )，所以雷射出射部 68 之亮 度成爲123x 1〇6 ( W/m2)，相較於以往約可圖謀80倍的高亮 度化。又，每1條光纖之亮度爲90x 1 06 ( W/m2)，相較於以 往約可圖謀28倍的高亮度化。 在此，參照第15 ( A )及15 ( B )圖，針對以往的曝光頭和 本實施形態的曝光頭之焦點深度的差異加以說明。以往的曝 光頭之束狀光纖光源的發光區域之副掃描方向的直徑爲 0.675mm，本實施形態之曝光頭的光纖陣列光源之發光區域的 副掃描方向的直徑爲0.025mm。如第15 ( A )圖所示，在以往 的曝光頭中，光源（束狀光纖光源）1之發光區域大，所以對 DMD3入射的光束之角度變大，其結果，對掃描面5入射的光 束之角度變大。爲此，相對於集光方向（焦點方向之偏差）， 光束直徑係易過寬。 一方面，如第15 ( B )圖所示，在本實施形態的曝光頭中，光 纖陣列光源66之發光區域的副掃描方向之直徑小，所以通過 透鏡系67對DMD50入射的光束之角度變小，其結果，對掃 描面56入射的光束之角度變小。亦即，焦點深度變深。在本 例中，發光區域之副掃描方向的徑係約爲以往的30倍，可獲 得與略繞折界限相當的焦點深度。因此適於微小光點之曝 光。對此焦點深度之效果係在曝光頭的必要光量越大越顯著 且有效。在此例中，被投影在曝光面之1畫素尺寸係10 // mx 1 0 // m 〇 此外，DMD係反射型的空間調變元件，如第15(A)及15(B) 200405032 圖係用以說明光學方面之關係的展開圖。 對應曝光圖案之畫像資料係被輸入連接在DMD50之未圖 示的控制器，且暫時記憶在控制器內之圖框記憶體。此畫像 資料係以2進制（點記錄之有無）來表示構成畫像之各畫素 的濃度之資料。 表面上吸附著感光材料150之載物台152係依未圖示的驅 動裝置，沿著導引部158自閘門160的上游側往下游側以一 定速度移動。載物台152在通過閘門160下之際，當安裝在 閘門1 60之檢測感測器1 64檢測到感光材料1 50的前端時， 則記憶在圖框記憶體的畫像資料係被依序讀出各複數線，依 據在資料處理部讀出的畫像資料生成對各曝光頭1 66之控制 信號。然後，藉由鏡驅動控制部，依據生成的控制信號而控制 各曝光頭166各自之DMD50的微鏡之開啓、關閉。 當由光纖陣列光源66對DMD50照射雷射光時，在DMD50 之微鏡爲開啓狀態時，被反射的雷射光係依透鏡系54、58 而在感光材料150之被曝光面56上成像。如此一來，由光纖 陣列光源66所出射的雷射光係在各畫素被開啓、關閉，感光 材料150係會被與DMD 50的使用畫素數略同數量之畫素單 位（曝光區域168)所曝光。又，藉由感光材料150與載物台 152 —起以一定速度移動，感光材料150係依掃描器162在與 載物台移動方向相反的方向被執行副掃描，而形成各曝光頭 166之帶狀之已曝光區域170。 如第16 ( A )及16 ( B )圖所示，本實施形態中，於DMD50, 在主掃描方向配列有800個微鏡的微鏡列雖然在副掃描方向 配列有600組，但在本實施形態中，係依控制器來控制僅一部 分的微鏡列（例如，800個X 100列）被驅動。 200405032 如第16 ( A )圖所示，也可以使用配置在DMD50之中央部 的微鏡列，如第16 ( B )圖所示，也可以使用配置在DMD50之 端部的微鏡列。又，在一部分的微鏡產生缺陷的場合時，要使 用未發生缺陷的微鏡列等，因應狀況也可適宜變更要使用的 微鏡列。 DMD50的資料處理速度上係有其限度，與要使用之畫素數 成比例而每1線的調變速度係被決定，所以藉由僅使用一部 分的微鏡列，每1線的調變速度變快。一方面，在連續地使 曝光頭對相對移動之曝光方式時，並沒有將副掃描方向的畫 素予以全部使用之必要。 例如，600組的微鏡列之中，在僅使用300組之場合，與600 組全部使用之場合相比較下，係可將每1線調變快2倍。 又，600組的微鏡列之中，在僅使用200組之場合，與600組全 部使用之場合相比較下，係可將每1線調變快3倍。亦即， 可在副掃描方向將500mm的區域以17秒曝光。再者，在僅使 用1 00組之場合時，係可將每1線調變快6倍。亦即，可在副 掃描方向將500mm的區域以9秒曝光。 欲使用之微鏡列的數目，亦即，配置在副掃描方向之微鏡的 個數係10以上且200以下較好，10以上且100以下更好。由 於相當於1畫素之每1個微鏡的面積爲15 // mx 15 // m，所以 若換算爲DMD50的使用區域，則12nmx 150/zm以上且12mm x 3mm以下的區域較好，12mmx 150//m以上且12mmx 1.5mm 以下的區域更好。 欲使用之微鏡列的數目若在上述範圍，則如第17 ( A )及17 (B )圖所示，使由光纖陣列光源66所出射的雷射光在透鏡 系67施以略平行光化而可對DMD50照射。由DMD50照射 200405032 雷射光的照射區域與DMD50之使用區域係一致者爲較佳。 照射區域若較使用區域還寬則雷射光之利用效率降低。 一方面.，因應透鏡系67之在副掃描方向配列之微鏡的個數， 雖然有必要將集光於DMD50上之光束的副掃描方向之直徑 設定小，但是當使用之微鏡列的數目未滿1 〇時，則入射於 DMD50之光束的角度係變大，在掃描面56中之光束的焦點深 度變淺，所以並不佳。 又，以調變速度的觀點來說，使用之微鏡列數爲200以下 係較佳。此外，DMD係反射型之空間調變元件，第π ( A )及 1 7 ( B )圖係用以說明光學關係的展開圖。 當掃描器162對感光材料150的副掃描終了，以檢測感測 器164檢測到感光材料150的後端時，載物台152係依未圖 示之驅動裝置，沿著導引部1 5 8復歸至位在閫門1 60的最上 游側之原點，再度沿著導引部1 5 8以一定速度自閘門1 60的 上游側往下游側移動。 如同以上說明，本實施形態的曝光裝置，雖然具備有於副 掃描方向配列有600組在主掃描方向配列800個微鏡的微鏡 列之DMD，但因依控制器控制成僅一部分的微鏡列被驅動，所 以相較於驅動全部的微鏡列之場合，每1線的調變速度變 快。依此，高速之曝光係成爲可能。 又，因爲在用以照明DMD的光源上係使用把合波雷射光源 的光纖之出射端部予以陣列狀配列的高亮度光纖陣列光源， 所以可實現具備高輸出且深焦點深度之曝光裝置。再者，由 於各光纖光源的輸出變大，因用以獲得所期望之輸出所必要 的光纖光源數變少，所以可謀求曝光裝置之低成本化。 特別是在本實施形態中，因爲把光纖的出射端之包層直徑 -45 - 200405032 設定爲比入射端的包層直徑還小，所以發光部直徑係變更小， 所以可謀求光纖陣列光源之高亮度化。藉此，可實現具備有 更深的焦點深度之曝光裝置。例如，在光束直徑1 μ m以下、 解像度0· 1 // m以下的超高解像度曝光之場合時也可獲得深 的焦點^度，成爲可局速且局精細的曝光。因此適合於需要 高解像度的薄膜電晶體（TFT )之曝光工程。 以下，針對以上所說明的曝光裝置之變形例等加以說明。 〔曝光裝置的用途〕 上述的曝光裝置係，可適用在例如，印刷配線基板（PWB ; Printed Wiring Board)之製造工程中的乾式阻體膜（DFR; Dry Film Resist)之曝光，液晶顯示裝置（LCD)之製造工程 中之濾色器的形成、TFT之製造工程中之DFR的曝光、以及 電漿顯示器（PDP )之製造工程中之DFR的曝光等之用途。 再者，上述之曝光裝置也可使用在依雷射照射而將材料的一 部分予以蒸發、飛散等而除去之雷射消融或燒結、微影成像 術等之各種雷射加工。上述之曝光裝置係高輸出，且高速且 在長焦點深度之曝光係爲可能，所以可使用雷射消融等之微 細加工。例如，取代執行顯影處理、改以消融（ablation )方 式將阻體伴隨著圖案加以除去而作成PWB、在不使用阻體下 直接以消融方式形成PWB的圖案等，係可使用上述的曝光裝 置。又，也可使用於把多數溶液之混合、反應、分離、檢測 等積體化在玻璃或塑膠晶片之實驗室晶片中之溝寬數十μ m 之微小流路的形成上。 特別是在上述的曝光裝置係在光纖陣列光源使用GaN系 半導體雷射，所以可適用在上述的雷射加工。亦即，GaN系半 導體雷射係可以短脈波驅動，在雷射消融等也可獲得充分的 -46- 200405032 功率。且因係半導體雷射，所以與驅動速度慢的固體雷射不 同，可在反覆頻率數10MHz之程度下高速驅動，且可高速曝 光。又，金屬係在波長400nm附近的雷射光之光吸收率大，變 換爲熱能係容易，所以雷射消融等係可高速地執行。 此外，在把使用在TFT之圖案化所使用的液體阻體或把濾 色器圖案化所使用的液體阻體予以曝光時，爲了不讓氧化障 礙造成感度降低（去敏感），所以在氮氣環境下曝光被曝光 材料者係較佳。因爲在氮氣環境下曝光，所以光聚合反應之 氧化障礙受到抑制而阻體係高感度化，高速曝光係成爲可 能。 又，上述的曝光裝置係可使用依曝光而直接記錄資訊之光 子模式感光材料、或依曝光所產生的熱而記錄資訊之熱模式 感光材料中任一。在使用光子模式感光材料之場合，在雷射 裝置方面係使用GaN系半導體雷射、波長變換固體雷射等， 而在使用熱模式感光材料之場合，在雷射裝置方面係使用 AIGaAs系半導體雷射（紅外線雷射）、固體雷射。 〔其他空間調變元件〕 在上述的實施形態中，雖然已針對將DMD的微鏡作部分 地驅動之例加以說明，但是即使是在對應指定方向之方向的 長度爲比交叉於該指定方向的方向之長度還長的基板上，使 用因應各個控制信號、以2維配列有可變更反射面角度之多 數個微鏡的細長DMD，由於用以控制反射面之角度的微鏡個 數變少，所以同樣地可加速調變速度。 上述的實施形態中，雖然已針對作爲空間調變元件之具備 有DMD的曝光頭加以說明，例如，即使在使用有MEMS (微機 電系統）型之空間調變元件（SLM )或使用有依電氣光學效 200405032 果而調變透過光之光學元件（PLZT元件）及液晶光遮板 (FLC)等，即使在使用除MEMS型以外之空間調變元件的 場合，對基板上所配列之全部畫素部、藉由使用一部分之畫 素部，因爲可使每1畫素、每1主掃描線的調變速度加速，所 以可獲得同樣的效果。 以MEMS型之空間調變元件而言，例如，可以使用把具備帶 狀反射面且因應控制信號而可移動的可動格子和具備帶狀反 射面的固定格子予以交互地多數個並列配置所構成之GLV 元件、或GLV元件作陣列狀配列之燈泡陣列。 此外，所謂的MEMS係以1C製程爲基礎的微機械技術所成 之微尺寸的感測器、致動器，然後把控制電路予以積體化的 微系統之總稱，所謂的MEMS型之空間調變元件係意味著利 用靜電力之電氣機械動作所驅動之空間調變元件。 〔其他曝光方式〕 如第18圖所示，與上述的實施形態同樣地，以掃描器162對 X方向之1次掃描來將感光材料150全面作曝光也可以，如 第19 ( A)及19 ( B)圖所示，以掃描器162將感光材料150 往X方向掃描之後，使掃描器162在Y方向移動1步，再往X 方向執行掃描般地反覆掃描和移動，以複數回的掃描將感光 材料1 5 0的全面予以曝光也可以。此外，在本例中，掃描器1 6 2 係具備有18個曝光頭166。 〔其他雷射裝置（光源）〕 上述的實施形態中，係針對使用具備有複數個合波雷射光 源的光纖陣列光源之例子加以說明，但是雷射裝置並不局限 在把合波雷射光源予以陣列化的光纖陣列光源。例如，可使 用把具備1條用以出射由具有1個發光點的單一半導體雷射 200405032 所入射之雷射光之光纖的光纖光源被陣列化的光纖陣列光 線。但是更好爲焦點深度被取深之合波雷射光源。 又，以具備有複數個發光點之光源而言，例如，如第20圖所 示，可使用在熱塊100上配列有複數個（例如7個）晶片狀 、 之半導體雷射LD1〜LD7的雷射陣列。又，如第21 ( A )圖所 示，在指定方向配列有複數（例如，5個）個發光點11 〇a之晶 片狀的多腔雷射11 0係爲人所知悉。多腔雷射11 〇與配列晶 片狀的半導體雷射相較下，係可高精度地配列發光點，可容易 地把各發光點所出射的雷射光束予以合波。但是，發光點變 多則於雷射製造時在多腔雷射110變得容易產生變形，所以 ® 發光點11 0a之個數係設定爲5個以下較佳。 本發明之曝光頭中，可將此多腔雷射110或如第21 (B)圖 所示，在熱塊100上與各晶片之發光點110a之配列方向相同 方向上配列有複數個多腔雷射1 1 0之多腔雷射陣列作爲雷射 裝置（光源）來使用。 又，合波雷射光源並不被限定於用以把由複數個晶片狀之 半導體雷射所出射的雷射光予以合波者。例如5如第22圖所 示，可使用具備有複數（例如，3個）個發光點110a之晶片狀 @ 的多腔雷射11 0之合波雷射光源。此合波雷射光源係構成爲 具備有多腔雷射110、1條多模光纖130、以及集光透鏡120。 多腔雷射110係例如可以振盪波長爲405nm的GaN系雷射 二極體來構成。 上述的構成中，由多腔雷射110之複數個發光點ll〇a所出 射的雷射光束B係各自由集光透鏡120所集光而入射於多模 光纖130的核心130a。入射到核心130a的雷射光係在光纖 內傳送且合波爲1條而出射。 -49 一 200405032 在與上述多模光\纖130之核心直徑略等寬度內並設多腔雷 射110之複數個發光點ll〇a，同時作爲集光透鏡120,係使用 與多模光纖1 30之核心直徑略等焦點距離之凸透鏡或來自多 腔雷射110之出射光束僅在垂直其活性層之面內准直的杆式 透鏡，藉此可提升雷射光束B對多模光纖130的結合效率。 又，如第23圖所示，可使用具備有複數（例如，3個）個發 光點之多腔雷射11 0、在熱塊Π 1上具備有以等間隔配列複 數（例如，9個）個多腔雷射1 1 0之雷射陣列1 40的合波雷射 光源。複數個多腔雷射110係配列在與各晶片之發光點110a 的配列方向相同方向而固定。 此合波雷射光源係具備有：雷射陣列1 40 ;對應各多腔雷 射110而配置之複數個透鏡陣列114;配置在雷射陣列140 與複數個透鏡陣列1 14之間的1條杆式透境11 3 ; 1條多模 光纖130 ;以及集光透鏡120。透鏡陣列114係具備有對應 多腔雷射110之發光點的複數個微透鏡。 上述的構成中，複數多腔雷射110之複數個發光點l〇a之 各自出射的雷射光束B，係各自依杆式透境113而被集光在 指定方向之後，藉透鏡陣列1 1 4之各微透鏡而平行光化。被 平行光化的雷射光束L係由集光透鏡1 20集光而入射至多模 光纖130的核心130a。入射至核心130a的雷射光係在光纖 內傳送、合波成1條而出射。 接著要介紹其他合波雷射光源的例子。此合波雷射光源係 如第24 ( A )及24 ( B )圖所示，在略矩形狀之熱塊1 80上搭 載有光軸方向的斷面爲L字狀的熱塊182,在2個熱塊間形成 有收納空間。在L字狀的熱塊1 8 2上面，以陣列狀配列有複 數個發光點（例如，5個）的複數（例如，2個）多腔雷射1 i 〇 200405032 係在與各晶片之發光點1 1 0 a的配列方向相同方向以等間_ 配列而固定。 略矩形狀的熱塊180形成有凹部，在熱塊180的空間側上 面，以陣列狀配列有複數個發光點（例如，5個）複數（例如，2 · · 個）之多腔雷射11 0,係其發光點被配置成位在與配置在熱塊 _ 1 82之上面的雷射晶片之發光點相同的鉛直面上。 多腔雷射11 0之雷射光出射側係配置有，因應各晶片的發 光點11 Oa而配列有准直透鏡之准直透鏡陣列1 84。准直透 鏡陣列1 84,係各准直透鏡之長度方向和和雷射光束之視角爲 大的方向（速軸方向）一致，而各准直透鏡之寬度方向和視 # 角爲小的方向（遲軸方向）一致般地配置。如此，藉由將准 直透鏡陣列化而成一體化，雷射光之空間利用效率係提升而 可謀求合波雷射光源之高輸出化，同時可使零件數減少且低 成本化。 又，准直透鏡陣列184之雷射光出射側係配置有，1條多模 光纖130、以及把雷射光束集光至此多模光纖130的入射端 且結合的集光透鏡120。 上述的構成中，配置在雷射塊180、182上之複數多腔雷射 0 1 10之複數個發光點10a所各自出射的雷射光束B係各自被 准直透鏡陣列184所平行光化，依集光透鏡120而被集光以 入射至多模光纖130之核心130a。入射至核心130a之雷射 光係在光纖內傳送且被合波成1條而出射。 此合波雷射光源係如同上述，藉由多腔雷射之多段配置和 准直透鏡之陣列化，特別可圖謀高輸出化。藉由使用此合波 雷射光源，因爲可構成高亮度之光纖陣列光源或束光纖光源， 所以特別適合作爲構成本發明之曝光裝置的雷射光源之光纖 -51- 200405032 光源。 此外，把上述之各合波雷射光源收納至罩內，可構成把多模 光纖1 3 0之出射端邰由其罩引出的雷射模組。 又，在上述實施形態中，已說明了在合波雷射光源之多模 光纖的出射端，與核心直徑爲與多模光纖相同且包層直徑爲 較多模光纖還小之其他光纖結合，以圖謀光纖陣列光源之高 壳度化的例子，例如第29圖所示，把包層直徑爲125 // m、80 //m、60//m等之多模光纖30在出射端不結合其他光纖之下 來使用也可以。 〔光量分布補正光學系統〕 上述的實施形態中，係在曝光頭使用由1對組合透鏡所構 成之光量分布補正光學系統。此光量分布補正光學系統係使 在各出射位置的光束寬度變化，以使周邊部對接近光軸之中 心部的光束寬度之比與入射側相較下，係出射側的會變小，當 來自光源之平行光束對DMD照射時，在被照射面之光量分布 係成爲略均一般地作補正。以下，針對此光量分布補正光學 系統的作用加以說明。首先，如第25 ( A )圖所示，以入射光 束及出射光束在其全體之光束寬度（全光束寬度）HO、H1 爲相同之場合加以說明。此外，在第25 ( A)圖中，以符號51、 52所示的部分係表示假設爲光量分布補正光學系統中之入 射面及出射面者。 在光量分布補正光學系統中，S受定入射至接近光軸Z1的中 心部之光束與入射至周邊部之光束之各自的光束寬度h0、hi 爲相同（h0二hi )。光量分布補正光學系統，對在入射側爲同 一光束寬度h0、hi的光，有關中心部的入射光束，係放大其光 束寬度h0,反之，對周邊部之入射光束，係施加使其光束寬度 200405032 縮小的作用。亦即，有關中心部之出射光束的寬度hio和周 邊部之出射光束的寬度hll，係成爲hllChlO。若以光束寬度 的比率來表示，則周邊部對在出射側之中心部的光束寬度比 [hll/hlO]與在入射側之比（hl/h0= 1 )相較下係變小（hll/hlO) - ^ <1)〇 如此，藉由使光束寬度變化，可將通常光量分布變大之中 央部的光束往光量不足的周邊部產生，整體而言、在不降低 光的利用效率下，被照射面之光量分布係被略均一化。均一 化的程度係例如，在有效區域內之亮斑爲30%以內，較好爲設 定成20%以內。 _ 依此種光量分布補正光學系統之作用、效果也與在入射側 和出射側改變全體的光束寬度之場合（第25 ( B )、25 ( C )) 同樣。 第25 ( B )圖係表示把入射側之全體光束寬度H0縮小 成寬度 H2加以出射的場合（H0> H2 )。在此種場合，光量 分布補正光學系統係，在入射側爲同一光束寬度h0、hi的光， 於出射側，中央部的光束寬度hlO係變得比周邊部還大，反之， 周邊部之光束寬度hll係變得比中心部還小。若以光束的縮 g 小率來考量，則施予把對中心部的入射光束之縮小率設定爲 較周邊部小，而把對周邊部之入射光束的縮小率設定爲較中 心部大的作用。在此場合，周邊部的光束寬度對中心部的光 束寬度之比「H11/H10」係與在入射側的比（hl/hO=l)相較 下變小（（hll/hlO) <1)。 第25 ( C )圖係表示把入射側之全體的光束寬度H0放大 成寬度 H3加以出射的場合（HO < H3 )。即使在此種場合， 光量分布補正光學系統係設定成，把入射側爲同一光束寬 -53 - 200405032 h 0、h 1的光，於出射側，中央部的光束寬度h 10係與在周邊咅 相較下變大，反之，周邊部的光束寬度hll與在中心部相較下 係變小。若以光束的放大率加以考量，與·周邊部相較下係把 對中心部的入射光束之放大率設大，施予把對周邊部的入射 光束之放大率設爲較在中心部爲小的作用。在此場合，對中 心部之光束寬度的周邊部之光束寬度比「hll/hlO」，係與在 入射側的比（hl/hO = 1 )相較下變小（（hll/hlO) < 1 )。 如此，光量分布補正光學系統係使在各出射位置的光束寬 度變化，因爲把周邊部的光束寬度相對於接近光軸Z1之中心 部的光束寬度之比設定爲，與入射側相較下，出射側係變小，所 以在入射側爲同一光束寬度的光，於出射側，中央部的光束 寬度係變得比周邊部還大，周邊部的光束寬度係變得比中心 部還小。藉此，可將中央部的光束往周邊部產生，在光學系統 全體之光利用效率不降低之下，可形成光量分布被略均一化 之光束斷面。 以下，表示作爲光量分布補正光學系統來使用之成對的組 合透鏡之具體的透鏡資料的1例。在此例中，如同光源爲雷 射陣列光源之場合一般，表示在出射光束的斷面之光量分布 爲高斯分布時之透鏡資料。此外，在單模光纖的入射端連接 有1個半導體雷射的場合，來自光纖的射出光束之光量分布 係成爲高斯分布。本實施形態也可適用在此種場合。又，藉 由把多模光纖的核心直徑設小以接近單模光纖的構成等，則 接近光軸之中心部的光量係也可適用在比周邊部的光量還大 的場合。 下列表1係表示基本透鏡資料。 200405032 【表1】 基本透鏡資料 Si ri di Νι (面編號） (曲率半徑） (面間隔） (折射率） 01 非球面 5.000 1.5281 1 02 〇〇 50.000 03 〇〇 7.000 1.5281 1 04 非球面In each laser module, when the combining efficiency of the laser beams B1 to B7 to the multimode fiber 30 is 0.85 and the output of each of the GaN-based semiconductor lasers LD1 to LD7 is 30 mW, each optical fiber 31 is arrayed in an array. The system can obtain a combined laser beam B with an output of about 180mW (= 30Mwx 0 · 85χ 7). Therefore, the output of the laser emitting section 68 in which six optical fibers 31 are arranged in an array is about 1W (= 180mW X 6). The laser emitting sections 68 of the fiber array light source 66 are arranged in a row along the main scanning direction. This kind of high-brightness light-emitting point. The conventional optical fiber light source that combines laser light from a single semiconductor laser to one optical fiber has a low output, so if a large number of rows are not arranged, the desired output cannot be obtained, but the multiplexed laser used in this embodiment The light source has a high output, so a small number of columns, for example, one column can obtain the desired output. For example, in the conventional optical fiber light source that combines semiconductor laser and optical fiber in a one-to-one manner, in general, in terms of semiconductor lasers, lasers with an output of about 30 mW (milliwatts) are used. In terms of optical fibers, It uses a multimode fiber with a core diameter of 50 μm, a cladding diameter of 125 // m, and NA (number of openings) of 0.2. Therefore, if you want to obtain an output of about 1W (watt), you must use 48 (8x 6) multimode fibers. ) Into a bundle, the area of the light emitting area is 0.62mm2 (0.675mmx 0.925mm), so the brightness of the laser emitting section 68 is 1.6x106 (W / m2), and the brightness of each 200405032 fiber is 3 · 2χ 106 (W / m2). In contrast, in this embodiment, as described above, an output of 11V can be obtained with the multimode fiber 6 treaty. The area of the light emitting area of the laser emitting portion 68 is 0.008 1mm2 (0.325mmx 0.025mm), so the laser emits The brightness of the emitter 68 is 123x106 (W / m2), which is about 80 times higher than the conventional scheme. In addition, the brightness of each optical fiber is 90x106 (W / m2), which is about 28 times higher than that in the past. Here, with reference to FIGS. 15 (A) and 15 (B), the difference in the depth of focus between the conventional exposure head and the exposure head of this embodiment will be described. The diameter in the sub-scanning direction of the light-emitting region of the conventional beam head optical fiber light source is 0.675 mm, and the diameter in the sub-scanning direction of the light-emitting region of the fiber array light source of the exposure head of this embodiment is 0.025 mm. As shown in FIG. 15 (A), in the conventional exposure head, the light emitting area of the light source (bundled optical fiber light source) 1 is large, so the angle of the light beam incident on the DMD 3 becomes large. As a result, the light incident on the scanning surface 5 The angle of the light beam becomes larger. For this reason, the beam diameter tends to be too wide with respect to the light collection direction (deviation of the focus direction). On the other hand, as shown in FIG. 15 (B), in the exposure head of this embodiment, the diameter of the sub-scanning direction of the light emitting area of the fiber array light source 66 is small, so the angle of the light beam incident on the DMD 50 through the lens system 67 changes. As a result, the angle of the light beam incident on the scanning surface 56 becomes small. That is, the depth of focus becomes deeper. In this example, the diameter in the sub-scanning direction of the light-emitting area is about 30 times that of the conventional one, and a depth of focus equivalent to a slightly wound boundary can be obtained. Therefore, it is suitable for exposure of small light spots. The effect of this depth of focus is that the larger the amount of light necessary for the exposure head, the more significant and effective it becomes. In this example, the size of 1 pixel projected on the exposure surface is 10 // mx 1 0 // m 〇 In addition, the DMD is a reflective spatial modulation element, such as 15 (A) and 15 (B) 200405032. The figure is an exploded view for explaining the relationship between optics. The image data corresponding to the exposure pattern is input to an unillustrated controller connected to the DMD50 and temporarily stored in the frame memory in the controller. This image data is the binary data (the presence or absence of a dot record) that represents the density of each pixel that makes up the image. The stage 152 on which the photosensitive material 150 is adsorbed on the surface is moved at a constant speed from the upstream side to the downstream side of the shutter 160 along the guide portion 158 according to a driving device (not shown). When the stage 152 passes under the gate 160, when the detection sensor 1 64 installed at the gate 160 detects the front end of the photosensitive material 150, the image data stored in the frame memory is read sequentially Each complex line is drawn out, and a control signal for each exposure head 1 66 is generated based on the image data read out in the data processing section. Then, the mirror drive control section controls the opening and closing of the micromirrors of the DMD 50 of each of the exposure heads 166 in accordance with the generated control signals. When the DMD 50 is irradiated with laser light by the fiber array light source 66, when the micro mirror of the DMD 50 is on, the reflected laser light is imaged on the exposed surface 56 of the photosensitive material 150 according to the lens systems 54,58. In this way, the laser light emitted by the fiber array light source 66 is turned on and off at each pixel, and the photosensitive material 150 is used in a pixel unit (the exposure area 168) that is slightly the same as the number of pixels used by the DMD 50. Exposure. In addition, by moving the photosensitive material 150 and the stage 152 at a certain speed, the photosensitive material 150 is subjected to sub-scanning by the scanner 162 in a direction opposite to the movement direction of the stage to form a belt of each exposure head 166 State of the exposed area 170. As shown in Figures 16 (A) and 16 (B), in this embodiment, in the DMD50, a micromirror array with 800 micromirrors arranged in the main scanning direction, although 600 groups are arranged in the sub-scanning direction, In the embodiment, only a part of the micromirror columns (for example, 800 X 100 columns) is controlled by the controller to be driven. 200405032 As shown in Figure 16 (A), a micromirror array arranged at the center of the DMD50 may be used. As shown in Figure 16 (B), a micromirror array arranged at the end of the DMD50 may also be used. In the case where a defect occurs in a part of the micromirrors, a micromirror array or the like where no defect occurs is used, and the micromirror array to be used may be appropriately changed according to the situation. The data processing speed of DMD50 has its limit. The modulation speed per line is determined in proportion to the number of pixels to be used. Therefore, by using only a part of the micromirror array, the modulation speed per line is adjusted. Get faster. On the one hand, it is not necessary to use all the pixels in the sub-scanning direction when continuously exposing the exposure head to the relative moving exposure method. For example, among the 600 micromirror columns, when only 300 groups are used, compared with the case where all 600 groups are used, the modulation can be adjusted twice as fast per line. In addition, among the 600 micromirror arrays, when only 200 groups are used, compared with the case where all 600 groups are used, the modulation can be changed three times per line. That is, an area of 500 mm can be exposed in the sub-scanning direction for 17 seconds. Furthermore, when only 100 sets are used, the modulation can be changed 6 times faster per line. That is, an area of 500 mm can be exposed in the sub-scanning direction for 9 seconds. The number of micromirror rows to be used, that is, the number of micromirrors arranged in the sub-scanning direction is preferably 10 or more and 200 or less, and more preferably 10 or more and 100 or less. Since the area of each micromirror equivalent to 1 pixel is 15 // mx 15 // m, if converted to the use area of DMD50, the area above 12nmx 150 / zm and below 12mm x 3mm is better, 12mmx Areas above 150 // m and below 12mmx 1.5mm are better. If the number of micromirror rows to be used is within the above range, as shown in Figures 17 (A) and 17 (B), the laser light emitted by the fiber array light source 66 is slightly parallelized in the lens system 67. And can be irradiated to DMD50. DMD50 irradiation 200405032 It is better that the irradiation area of the laser light is the same as the use area of DMD50. If the irradiation area is wider than the use area, the utilization efficiency of the laser light decreases. On the one hand, according to the number of micromirrors arranged in the sub-scanning direction of the lens system 67, although it is necessary to set the diameter of the sub-scanning direction of the light beam collected on the DMD50 to be small, the number of micromirror rows to be used when When it is less than 10, the angle of the light beam incident on the DMD 50 becomes large, and the focal depth of the light beam on the scanning surface 56 becomes shallow, which is not preferable. From the viewpoint of modulation speed, the number of micromirror rows used is preferably 200 or less. In addition, the DMD is a reflective spatial modulation element, and the π (A) and 17 (B) diagrams are expanded views for explaining the optical relationship. When the sub-scanning of the photosensitive material 150 by the scanner 162 is ended, and the rear end of the photosensitive material 150 is detected by the detection sensor 164, the stage 152 is driven along the guide portion 1 5 8 according to a driving device (not shown). Return to the origin located on the most upstream side of the gate 160, and move again along the guide portion 1 58 at a certain speed from the upstream side to the downstream side of the gate 160. As described above, although the exposure apparatus of this embodiment includes a DMD having 600 micromirror arrays with 600 micromirrors arranged in the main scanning direction in the sub-scanning direction, only a part of the micromirrors is controlled by the controller. Since the columns are driven, the modulation speed per line is faster than when all the micromirror columns are driven. With this, high-speed exposure is possible. In addition, since the light source used to illuminate the DMD is a high-brightness fiber array light source in which the exit ends of the optical fibers of the multiplexed laser light source are arranged in an array, an exposure device having a high output and a deep focus depth can be realized. Furthermore, since the output of each optical fiber light source is increased, and the number of optical fiber light sources necessary to obtain a desired output is reduced, the cost of the exposure apparatus can be reduced. Especially in this embodiment, since the cladding diameter of the outgoing end of the optical fiber is set to -45-200405032 to be smaller than the cladding diameter of the incident end, the diameter of the light emitting portion is changed to be smaller, so the high brightness of the optical fiber array light source can be achieved. Into. Thereby, an exposure device having a deeper depth of focus can be realized. For example, in the case of ultra-high-resolution exposures with a beam diameter of 1 μm or less and a resolution of 0 · 1 // m or less, a deep focus can be obtained, making it possible to achieve fast and fine exposure. Therefore, it is suitable for the exposure process of thin film transistor (TFT) which requires high resolution. Hereinafter, modifications and the like of the exposure apparatus described above will be described. [Application of the exposure device] The above-mentioned exposure device is applicable to, for example, exposure of a dry film resist (DFR) in a manufacturing process of a printed wiring board (PWB; Printed Wiring Board), and a liquid crystal display device ( LCD) is used for the formation of color filters, TFT for the exposure of DFR during the manufacturing process, and plasma display (PDP) for the exposure of DFR during the manufacturing process. In addition, the above-mentioned exposure device can also be used for various laser processes such as laser ablation or sintering, and lithography, which remove a part of the material by laser irradiation, and scattering. The above-mentioned exposure device has a high output, and a high-speed and long-focus depth exposure system is possible. Therefore, fine processing such as laser ablation can be used. For example, instead of performing a development process, replacing the resist with an ablation pattern to form a PWB, and directly forming a PWB pattern by ablation without using the resist, the above-mentioned exposure device can be used. In addition, it can also be used to form a large flow path with a groove width of tens of μm in laboratory wafers made of glass or plastic wafers for the integration of most solutions for mixing, reaction, separation, and detection. In particular, since the above-mentioned exposure apparatus uses a GaN-based semiconductor laser as a fiber array light source, it can be applied to the above-mentioned laser processing. That is, the GaN-based semiconductor laser system can be driven by short pulse waves, and sufficient power of -46-200405032 can be obtained in laser ablation and the like. And because it is a semiconductor laser, unlike a solid laser with a slow driving speed, it can be driven at high speeds at repeated frequencies of about 10 MHz and exposed at high speeds. In addition, since the metal system has a large light absorptivity of laser light around a wavelength of 400 nm, and it is easy to convert to a thermal energy system, laser ablation and the like can be performed at high speed. In addition, when the liquid resist used for patterning of TFT or the liquid resist used for patterning of color filters is exposed, in order to prevent the oxidation barrier from reducing the sensitivity (desensitization), it is in a nitrogen environment. It is preferable to expose the exposed material under exposure. Exposure to a nitrogen atmosphere suppresses the oxidation barrier of the photopolymerization reaction and increases the sensitivity of the barrier system, making high-speed exposure possible. In addition, the above-mentioned exposure device can use either a photon mode photosensitive material that directly records information by exposure or a thermal mode photosensitive material that records information by heat generated by exposure. When using photon-mode photosensitive materials, GaN-based semiconductor lasers and wavelength-converting solid-state lasers are used for laser devices. When thermal-mode photosensitive materials are used, AIGaAs-based semiconductor lasers are used for laser devices. (Infrared laser), solid laser. [Other spatial modulation elements] In the above-mentioned embodiment, although the example in which the DMD micromirror is partially driven has been described, even if the length in the direction corresponding to the specified direction is longer than the length that crosses the specified direction On the substrate with a longer length in the direction, a long and thin DMD with a plurality of micromirrors arranged in two dimensions to change the angle of the reflecting surface is used in accordance with each control signal. Since the number of micromirrors used to control the angle of the reflecting surface is reduced, Therefore, the modulation speed can also be accelerated. In the above-mentioned embodiment, although the exposure head equipped with DMD as a space modulation element has been described, for example, even when a space modulation element (SLM) of a MEMS (Micro Electro Mechanical System) type is used or Yura Electric is used Optical effect 200405032 The optical element (PLZT element) and liquid crystal light shield (FLC) that modulate the transmitted light, even when using a spatial modulation element other than the MEMS type, all pixels arranged on the substrate By using a part of the pixel unit, since the modulation speed per pixel and per main scanning line can be accelerated, the same effect can be obtained. For a MEMS-type spatial modulation element, for example, a movable grid having a strip-shaped reflecting surface and movable according to a control signal and a fixed grid having a strip-shaped reflecting surface may be arranged in parallel and arranged in parallel. GLV elements, or GLV elements are arrayed as an array of bulbs. In addition, the so-called MEMS is a general term for a micro-system of micro-scale sensors and actuators based on 1C process micro-mechanical technology, and then integrated control circuits. The variable element means a spatial modulation element driven by an electromechanical action using an electrostatic force. [Other exposure methods] As shown in FIG. 18, similarly to the above embodiment, the scanner 162 can scan the X direction to expose the photosensitive material 150 in its entirety, as shown in Figures 19 (A) and 19 (B) As shown in the figure, after scanning the photosensitive material 150 in the X direction with the scanner 162, the scanner 162 is moved one step in the Y direction, and then repeatedly scanned and moved like a scan in the X direction to perform multiple scans. It is also possible to expose the entire surface of the photosensitive material 150. In this example, the scanner 16 2 is provided with 18 exposure heads 166. [Other laser devices (light sources)] In the above-mentioned embodiment, an example is described in which an optical fiber array light source having a plurality of multiplexing laser light sources is used, but the laser device is not limited to the multiplexing laser light source An arrayed fiber array light source. For example, an optical fiber array light having an array of an optical fiber light source having one optical fiber for emitting laser light incident from a single semiconductor laser 200405032 having one light emitting point can be used. But it is better for a multiplexed laser light source whose depth of focus is taken deep. Further, for a light source having a plurality of light emitting points, for example, as shown in FIG. 20, a semiconductor laser LD1 to LD7 in which a plurality of (eg, seven) wafer-shaped semiconductor lasers are arranged on the thermal block 100 can be used. Laser array. Further, as shown in FIG. 21 (A), a crystalline plate-shaped multi-cavity laser 110 having a plurality of (e.g., five) light emitting points 110a arranged in a specified direction is known. Compared with the multi-cavity wafer-shaped semiconductor laser, the multi-cavity laser can arrange the light emitting points with high accuracy, and can easily combine the laser beams emitted from the light emitting points. However, as the number of light-emitting points increases, the multi-cavity laser 110 becomes easily deformed during the manufacture of the laser. Therefore, the number of ® light-emitting points 110a is preferably set to 5 or less. In the exposure head of the present invention, the multi-cavity laser 110 or a plurality of multi-cavities can be arranged on the thermal block 100 in the same direction as the arrangement direction of the light emitting points 110a of each wafer as shown in FIG. Multi-cavity laser array of laser 1 10 is used as laser device (light source). Furthermore, the multiplexing laser light source is not limited to those for multiplexing laser light emitted from a plurality of wafer-shaped semiconductor lasers. For example, as shown in FIG. 22, a multi-cavity laser light source having a multi-cavity laser 110 having a wafer shape @ having a plurality of (for example, three) light emitting points 110a can be used. This multiplexed laser light source is configured to include a multi-cavity laser 110, one multi-mode optical fiber 130, and a light collecting lens 120. The multi-cavity laser 110 can be configured by oscillating a GaN-based laser diode having a wavelength of 405 nm, for example. In the above configuration, the laser beams B emitted from the plurality of light emitting points 110a of the multi-cavity laser 110 are each collected by the light collecting lens 120 and incident on the core 130a of the multimode optical fiber 130. The laser light incident on the core 130a is transmitted through an optical fiber, and is multiplexed and emitted. -49-200405032 A plurality of light emitting points 110a of the multi-cavity laser 110 are set within a width approximately equal to the core diameter of the above-mentioned multi-mode optical fiber 130, and at the same time, they are used as the light collecting lens 120, which is used with the multi-mode optical fiber 1 A convex lens with a core diameter of approximately 30 and a focal distance or a rod lens collimated from the multi-cavity laser 110 only within the plane perpendicular to its active layer, thereby improving the laser beam B's effect on the multimode fiber 130. Combining efficiency. Further, as shown in FIG. 23, a multi-cavity laser 11 0 having a plurality (for example, 3) of light emitting points can be used, and a plurality of (for example, 9) being arranged at regular intervals on the thermal block Π 1 can be used. A multi-wavelength laser light source with a multi-cavity laser array 1 40 and a laser array array 1 40. The plurality of multi-cavity lasers 110 are aligned and fixed in the same direction as the alignment direction of the light emitting points 110a of each wafer. This multiplexed laser light source is provided with: a laser array 1 40; a plurality of lens arrays 114 arranged corresponding to each of the multi-cavity lasers 110; and one line arranged between the laser array 140 and the plurality of lens arrays 1 14 A rod-type translucent 11 3; a multi-mode optical fiber 130; and a light collecting lens 120. The lens array 114 includes a plurality of microlenses corresponding to the light emitting points of the multi-cavity laser 110. In the above configuration, the laser beams B emitted from the plurality of light emitting points 10a of the plurality of multi-cavity lasers 110 are respectively collected in a specified direction according to the rod-type transmission 113, and then are borrowed from the lens array 1 1 Each microlens of 4 is parallel actinized. The collimated laser beam L is collected by the condenser lens 120 and incident on the core 130a of the multimode optical fiber 130. The laser light incident on the core 130a is transmitted through an optical fiber, multiplexed into a single beam, and emitted. Next, we will introduce other examples of multiplexed laser light sources. As shown in Figures 24 (A) and 24 (B), this multiplexed laser light source is equipped with a heat block 182 having an L-shaped cross section in the optical axis direction on a heat block 180 of a substantially rectangular shape. A storage space is formed between the two heat blocks. On the L-shaped heat block 1 8 2, a plurality of light emitting points (for example, 5) are arranged in an array (for example, 2). A multi-cavity laser 1 i 〇200405032 is connected to the light emission of each wafer. The arrangement direction of the points 1 1 0 a is fixed in the same direction by an equal interval _ arrangement. The slightly rectangular heat block 180 is formed with a recess. On the space side of the heat block 180, a plurality of light emitting points (for example, 5) and a plurality of (for example, 2 · ·) multi-cavity lasers 11 are arranged in an array. 0, because its light emitting point is arranged on the same vertical plane as the light emitting point of the laser chip arranged above the thermal block _ 82. A collimator lens array 184 having a collimator lens is arranged on the laser light exit side of the multi-cavity laser 110, corresponding to the light emission point 11 Oa of each wafer. The collimator lens array 1 84 is the length direction of each collimator lens and the direction (speed axis direction) where the viewing angle of the laser beam is large, and the width direction and the viewing angle of each collimator lens are small ( Late axis direction). In this way, by integrating and collimating the collimating lens array, the space utilization efficiency of the laser light is improved and the output of the multiplexed laser light source can be increased. At the same time, the number of parts can be reduced and the cost can be reduced. The laser light exit side of the collimating lens array 184 is provided with one multi-mode optical fiber 130 and a light-collecting lens 120 that combines the laser beam to the incident end of the multi-mode optical fiber 130 and is combined. In the above-mentioned configuration, the laser beams B emitted from the plurality of multi-cavity lasers 0 1 10 and the plurality of light emitting points 10 a arranged on the laser blocks 180 and 182 are each parallelized by the collimator lens array 184. The light is collected by the light collecting lens 120 to be incident on the core 130 a of the multi-mode optical fiber 130. The laser light incident on the core 130a is transmitted in an optical fiber and is multiplexed into a single beam and emitted. This multiplexed laser light source is as described above, and it is particularly possible to achieve high output through the multi-segment configuration of the multi-cavity laser and the array of collimating lenses. By using this multiplexed laser light source, a high-brightness optical fiber array light source or a bundled optical fiber light source can be formed, so it is particularly suitable as the optical fiber -51- 200405032 light source of the laser light source constituting the exposure device of the present invention. In addition, accommodating each of the above-mentioned multiplexed laser light sources in a cover can constitute a laser module that extracts the output end of the multimode optical fiber 130 from the cover. Also, in the above embodiment, it has been described that the exit end of the multimode fiber of the multiplexed laser light source is combined with other fibers having the same core diameter as the multimode fiber and a cladding diameter of more than the mode fiber. Take the example of increasing the shell degree of the optical fiber array light source, for example, as shown in FIG. 29, the multi-mode optical fiber 30 with a cladding diameter of 125 // m, 80 // m, 60 // m, etc. is not combined at the exit end. It can also be used under other fibers. [Light quantity distribution correction optical system] In the above-mentioned embodiment, the exposure head uses a light quantity distribution correction optical system composed of a pair of combination lenses. This light quantity distribution correction optical system changes the beam width at each exit position so that the ratio of the beam width of the peripheral portion to the center portion near the optical axis is smaller than the incident side, and the exit side becomes smaller. When the DMD is irradiated by the parallel light beams of the light source, the light amount distribution on the irradiated surface becomes almost uniformly corrected. The function of this light amount distribution correction optical system will be described below. First, as shown in FIG. 25 (A), a case where the entire beam widths (full beam widths) HO and H1 of the incident light beam and the outgoing light beam are the same will be described. In addition, in Fig. 25 (A), the portions shown by symbols 51 and 52 indicate those who are assumed to be the incident surface and the outgoing surface in the light amount distribution correction optical system. In the light quantity distribution correction optical system, the beam widths h0, hi of the light beam incident to the central portion close to the optical axis Z1 and the light beam incident to the peripheral portion are the same (h0 = hi). Light quantity distribution correction optical system. For light with the same beam widths h0 and hi on the incident side, the incident beam at the central part is amplified by the beam width h0. Conversely, for the incident beam at the peripheral part, the beam width is applied. Shrinking effect. That is, the width hio of the outgoing light beam at the central portion and the width hll of the outgoing light beam at the peripheral portion are hllChlO. When expressed in terms of the ratio of the beam width, the ratio of the beam width ratio [hll / hlO] of the peripheral portion to the center portion on the exit side and the ratio on the incident side (hl / h0 = 1) become smaller than the lower ratio (hll / hlO)-^ < 1) 〇 In this way, by changing the beam width, it is possible to generate a light beam in the central portion where the light quantity distribution generally becomes larger toward the peripheral portion where the light quantity is insufficient. As a whole, without reducing the light utilization efficiency The light quantity distribution of the illuminated surface is slightly uniformized. The degree of uniformity is, for example, that the bright spots in the effective area are within 30%, and preferably set within 20%. _ The function and effect of correcting the optical system based on this light quantity distribution are the same as when the entire beam width is changed on the incident side and the outgoing side (Nos. 25 (B), 25 (C)). Figure 25 (B) shows the case where the entire beam width H0 on the incident side is reduced to a width H2 and emitted (H0 > H2). In this case, the light quantity distribution correction optical system is a light beam with the same beam widths h0 and hi on the incident side, and on the exit side, the beam width hlO in the central portion becomes larger than the peripheral portion, and conversely, the beam on the peripheral portion The width hll becomes smaller than the center portion. If the reduction rate of the beam is taken into consideration, the reduction ratio of the incident beam to the center portion is set to be smaller than that of the peripheral portion, and the reduction ratio of the incident beam to the peripheral portion is set to be larger than the center portion. . In this case, the ratio “H11 / H10” of the beam width at the peripheral portion to the beam width at the center portion becomes smaller than the ratio (hl / hO = l) on the incident side ((hll / hlO) < 1 ). Figure 25 (C) shows a case where the entire beam width H0 on the incident side is enlarged to a width H3 and emitted (HO < H3). Even in this case, the light quantity distribution correction optical system is set so that the incident side is light with the same beam width -53-200405032 h 0, h 1, and on the exit side, the beam width h 10 in the center is the same as that in the periphery. The beam width h11 at the peripheral portion becomes smaller than that at the center portion, whereas the beam width h11 at the peripheral portion becomes smaller. Considering the magnification of the beam, the magnification of the incident beam to the center is set to be larger than that of the peripheral portion, and the magnification of the incident beam to the peripheral portion is set to be smaller than that at the center. Role. In this case, the beam width ratio "hll / hlO" at the peripheral portion of the beam width at the center portion becomes smaller than the ratio (hl / hO = 1) on the incident side ((hll / hlO) < 1 ). In this way, the light amount distribution correction optical system changes the beam width at each exit position because the ratio of the beam width at the peripheral portion to the beam width at the center portion near the optical axis Z1 is set so that it is emitted compared with the incident side. The side system becomes smaller, so light with the same beam width on the incident side, and the beam width on the exit side becomes larger than the peripheral part, and the beam width on the peripheral part becomes smaller than the center part. Thereby, the light beam at the central portion can be generated to the peripheral portion, and a light beam section having a slightly uniform light distribution can be formed without reducing the light utilization efficiency of the entire optical system. An example of specific lens data of a paired combination lens used as a light quantity distribution correction optical system is shown below. In this example, as in the case where the light source is a laser array light source, the lens data is shown when the light quantity distribution of the cross section of the outgoing beam is Gaussian. In addition, when a semiconductor laser is connected to the incident end of the single-mode optical fiber, the light amount distribution of the outgoing beam from the optical fiber becomes a Gaussian distribution. This embodiment is also applicable to such a case. In addition, by reducing the core diameter of the multimode fiber to a configuration close to that of a single mode fiber, the light amount system near the center portion of the optical axis can be applied to a case where the light amount is larger than that at the peripheral portion. Table 1 below shows basic lens data. 200405032 [Table 1] Basic lens information Si ri di Νι (surface number) (curvature radius) (surface interval) (refractive index) 01 aspheric 5.000 1.5281 1 02 〇〇 50.000 03 〇〇 7.000 1.5281 1 04 aspheric
由表1可知，成對的組合透鏡係由旋轉對稱之2個非球面 透鏡所構成。將配置在光入射側之第1透鏡的光入射側的面 設爲第1面、光出射側的面設爲第2面，第1面係非球面形 狀。又，配置在光出射側之第2透鏡的光入射側之面設爲第3 面、光出射側之面設爲第4面，第4面係非球面形狀。As can be seen from Table 1, the paired combination lens is composed of two aspherical lenses which are rotationally symmetric. The surface on the light incident side of the first lens disposed on the light incident side is referred to as a first surface, the surface on the light exit side is referred to as a second surface, and the first surface has an aspheric shape. The surface on the light incident side of the second lens disposed on the light exit side is a third surface, the surface on the light exit side is a fourth surface, and the fourth surface has an aspheric shape.
表1中，面編號Si係表示第i ( i = 1〜4 )面之編號，曲率半 徑ri係表示第i面的曲率半徑，面間隔di係表示第1面和第 i + 1面之光軸上的面間隔。面間隔di値的單位爲毫米 (1mm)。折射率Ni係表示相對於具備有第i面之光學要素 的波長405nm之折射率的値。 下列表2係表示第1面及第4面的非球面資料。 【表2】 非球面資料 第1面 第4面 C —1.4098E - 02 一 9.8506E— 03 K —4.2192E+ 00 一 3.6253E+ 01 a3 -1.0027E- 04 一 8.9980E— 05 a4 3.059 1E- 05 2.3060E- 05 -55 - 200405032 a 5 一 4.51 15E— 07 一 2.2860E— 06 a 6 一 8.2819E— 09 8.7661E — 08 a7 4.1020E- 12 4.4028E— 1〇 a 8 1.223 1 - 1 3 1.3624E— 12 a9 5.375 3E - 16 3.3965E— 15 a 1 0 1.6315E- 18 7.4823E- 18 上述之非球面資料係以表示非球面形狀之下式（A )中的 係數所表示。 〔數式1〕In Table 1, the plane number Si indicates the number of the i-th (i = 1 to 4) plane, the radius of curvature ri indicates the radius of curvature of the i-th plane, and the plane interval di indicates light of the first plane and the i + 1 plane Face spacing on the axis. The interval di 面 is in millimeters (1mm). The refractive index Ni refers to chirp with a refractive index of 405 nm with respect to the optical element having the i-th surface. Table 2 below shows aspherical data on the first and fourth surfaces. [Table 2] Aspheric data 1st and 4th surface C —1.4098E-02-9.8506E — 03 K —4.2192E + 00-3.6253E + 01 a3 -1.0027E- 04-8.9980E — 05 a4 3.059 1E- 05 2.3060 E- 05 -55-200405032 a 5-4.51 15E— 07-2.2860E— 06 a 6-8.2819E— 09 8.7661E — 08 a7 4.1020E- 12 4.4028E— 1〇a 8 1.223 1-1 3 1.3624E— 12 a9 5.375 3E-16 3.3965E— 15 a 1 0 1.6315E- 18 7.4823E- 18 The above aspheric data is expressed by the coefficient in formula (A) below the aspheric shape. [Equation 1]
10 •Ρ (A) 上述式（A )中之各係數係定義如下。 Z :由位在距離光軸高度ρ之位置的非球面上之點降至非球 面之頂點的接平面（垂直於光軸的平面）之垂線的長度 (mm ) ρ:距離光軸之距離（mm) K :圓錐係數 C :近軸曲率（1 /r、r :近軸曲率半徑） ai :第i次（i = 3〜1 0 )之非球面係數 在表2所示的數値中，記號 E係表示接在其後之數値爲應 以 1 0爲底的指數，其以1 〇爲底之指數函數所表示的數値係 表示被乘於 E之前的數値。例如，以「1.0E — 02」爲例，係 表示「1·0 HT2」。 第27圖係表示藉由上述表1及表2所示之成對的組合透 鏡可得之照明光的光量分布。橫軸係表示距離光軸之座標， - 56 - 200405032 ?軸表示光量比（％ )。此外，爲了作比較，係以第26圖表示 未執行補正時之照明光的光量分布（高斯分布）。由第26圖 及第27圖可知，藉由以光量分布補正光學系統執行補正，與 不執行補正的場合相較下，係可獲得被略均一化之光景分 布。藉此，在曝光頭中之光利用效率不降低之下，可以均一的 雷射光執行無斑的曝光。此外，也可使用一般常用之杆式積 分儀或複眼透鏡等。 〔其他的成像光學系統〕 上述的實施形態中，雖然在曝光頭所使用之DMD的光反 射側設置了作爲成像光學系統之2組透鏡，但也可配置將雷 射光放大而成像之成像光學系統。藉由放大由DMD所反射 之光束線的斷面積，可將在被曝光面中之曝光區域面積（畫 像區域）放大成所期望之大小。 例如，曝光頭可由如第28( A )圖所示構成:對DMD50，DMD50 照射雷射光之照明裝置144;把在DMD50反射之雷射光予以 放大而成像之透鏡系454,45 8;對應DMD50之各畫素而配置 有多數微透鏡474之微透鏡陣列472;對應微透鏡陣列472 之各微透鏡而配置有多數光圈478之光圏陣列476;以及使通 過光圈之雷射光成像於被曝光面56之透鏡系480,482。 以此曝光頭而言，由照明裝置144照射雷射光時，由DMD50 在開啓方向所反射之光束線的斷面積係經由透鏡系454、458 而被放大數倍（例如，2倍）。被放大的雷射光係由微透鏡陣 列472的各微透鏡而對應DMD50之各畫素被集光，通過光圈 陣列476之對應的光圈。通過光圈之雷射光係經由透鏡系 480、482而成像於被曝光面56上。 在此成像光學系統中，由DMD50所反射之雷射光係經由放 200405032 大透鏡454、458被放大數倍而投影至被曝光面56，所以全體 的畫像區域變廣。此時，若未配置有微透鏡陣列4 7 2及光圈 陣列4 7 6，則如第2 8 ( B )圖所示，投影至被曝光面5 6之各光 束光點BS之1畫素尺寸（光點尺寸）係因應曝光區域468 ^ . 的尺寸而成爲大者，表示曝光區域468之鮮銳度的MTF(光學 · 傳遞函數）特性會降低。 一方面，在配置有微透鏡陣列472及光圈陣列476之場合， 由DMD50所反射之雷射光係依微透鏡陣列472的各微透鏡， 對應DMD 50之各畫素而被集光。藉此，如第28(C)圖所示， 即使是在曝光區域被放大的場合，也可把各先束先點B S的光 點尺寸縮小成所期望之大小（例如，1〇 A m l〇//m)，可防止 MTF特性之降低以執行高精細的曝光。此外，曝光區域468 之所以傾斜係，爲了使畫素間沒有間隙而將DMD50傾斜地配 置所致。 又，即使依微透鏡之像差的光束爲寬，也可利用光圈使被曝 光面56上之光點尺寸成爲一定大小般地將光束整形，同時藉 由使其通過對應各畫素所設置的光圈，可防止在鄰接之畫素 間的串音。 # 更者，藉由在照明裝置144上使用與上述實施形態同樣的 高亮度光源，因爲由透鏡45 8入射至微透鏡陣列472的各微 透鏡之光束角度變小，所以可防止鄰接的畫素之光束的一部 分之入射。亦即，可實現高消光比。 如以上說明，本發明之曝光頭及曝光裝置係具備有空間光 調變元件，可獲得加速此空間光調變元件的調變速度以執行 高速曝光之效果。 (第2實施形態） -58 200405032 第2實施形態係因應畫像資料，以由空間光調變元件所調 變的光束將光硬化性樹脂曝光以造形3維模型之光造形裝g 的實施形態。 〔光造形裝置〕 有關本發明之實施形態的光造形裝置係如第3 2圖所示，具 有在上方開口的容器156,在容器156內係收容有液狀的光硬 化性樹脂1 50。又，在容器1 5 6內配置有平板狀之昇降載物台 152,此昇降載物台152係由配置在容器156外之支持部154 所支持著。支持部154係設置有公螺旋部154A，此公螺旋部 1 5 4 A係與依未圖示的驅動馬達而可旋轉之導螺桿1 5 5螺合。 伴隨著此導螺桿1 5 5的旋轉，昇降載物台1 5 2係被昇降。 在容器156內所收容之光硬化性樹脂152的液面上方，箱 狀的掃描器1 62係配置成使其長度方向朝容器1 56的寬度方 向。掃描器162係由安裝在寬度方向的兩側面之2根支持臂 160所支持。此外，掃描器162係連接在未圖示之用以控制其 之控制器。 又，在容器156之長度方向的兩側面，係各自設置有在副掃 描方向延伸的導引部1 5 8。2根支持臂1 60的下端部係在此 導引部1 5 8，以沿者副掃描方向可往復移動地安裝著。此外， 在此光造形裝置係設置有未圖示之用以將支持臂160連同掃 描器162 —起沿著導引部158驅動之驅動裝置。 掃描器162係如第33圖所示，（例如，3行5列）具備有呈 略矩陣狀配列之複數個（例如14個）曝光頭1 66。在此例 中，因爲與容器156之寬度方向寬度之關係，在第3行係配置 了 4個曝光頭1 66。_此外，在表示配置在第m行之第η列的 各個曝光頭時，係表示成曝光頭166mn。 200405032 依曝光頭1 6 6的曝光區域1 6 8係以副掃描方向爲短邊的矩 形狀。因此，伴隨著掃描器162之移動，在光硬化性樹脂152 的液面係形成各曝光頭1 66帶狀的已曝光區域（硬化區域） 1 7 0。此外，在要表示依配列在第m行之第^列之各個曝光頭 ，、 所形成之曝光區域時，係表示爲曝光區域168 mn。 β 曝光頭166u〜166 mn各個之構成、動作、及變形例係與 第1實施形態相同。但是GaN系半導體雷射LD1〜LD7的波 長帶域係350nm〜420nm爲更好。而在使用低成本之GaN系 半導體雷射這點上，波長408nm係特別好。 又，在DMD50，於主掃描方向配列有800個微鏡之微鏡列 隱 係在副掃描方向配列有600組，但是利用控制器僅驅動一部 分的微鏡列（例如，8 00個X 100列）般的控制這點也與第1 實施形態相同。 上述之光造形裝置中，因應1層分之曝光圖案的畫像資料 係被輸入到連接至DMD50之未圖示的控制器，且暫時被記憶 在控制器內的圖框記憶體。此畫像資料係表示構成畫像之各 畫素的濃度以2進制（點記錄之有無）所表示的資料。 掃描器162係依未圖示的驅動裝置，沿著導引部158由副 掃描方向之上游側往下游側以一定速度被移動。當掃描器1 62 開始移動時，被記憶在圖框記憶體之畫像資料係各複數線被 依序讀出，再依據於資料處理部讀出的畫像資料而生成對各 曝光頭1 66之控制信號。然後，利用鏡驅動控制部，依據生成 的控制信號、各曝光頭1 66之DMD50的微鏡各自係被控制 開啓、關閉。 當雷射光由光纖陣列光源66被照射至DMD50時，則在 DMD50之微鏡爲開啓狀態時被反射之雷射光係，經由透鏡系 -60- 200405032 54、58而被成像在光硬化性樹脂150之液面（被曝光面）56 上。如此一來，由光纖陣列光源66所出射的雷射光係在各畫 素被開啓、關閉，光硬化性樹脂150係以與DMD50之使用畫 素數略同數量之畫素單位（曝光區域168)被曝光而硬化。 ' 又，藉由掃描器162被以一定速度移動，光硬化性樹脂150 _ 之液面被執行副掃描，以形成各曝光頭166帶狀的燒結區域 170 ° 當利用掃描器1 62的1次副掃描結束1層分的硬化時，掃 描器162係依未圖示的驅動裝置，沿著導引部158回復至位 在最上游側之原點。接著，依未圖示的、驅動馬達使導螺桿155 旋轉而將昇降載物台152降下指定量，使光硬化性樹脂150 的硬化部分沈到液面下，以液狀光硬化性樹脂1 50充滿硬化 部分的上方。然後，次層的畫像資料係在被輸入到連接至 DMD50之未圖示的控制器後，再度執行依掃描器162之畐!|掃 描。如此，反覆地執行依副掃描的曝光（硬化）和載物台之 下降，經由層疊硬化部分以形成3維模型。 如以上之說明，本實施形態的光造形裝置係具備有DMD，其 在主掃描方向配列800個微鏡之微鏡列係在副掃描方向配列 _ 有600組，但是因爲利用控制器使僅一部分之微鏡列受驅動 般地加以控制，所以與驅動全部的微鏡列之場合相較之下，每 1線的調變速度係變快速。依此係可高速的曝光及造形。 又，用以照明DMD的光源係，使用把合波雷射光源之光纖 的出射端部作陣列配列的高亮度之光纖陣列光源，所以可獲 得高輸出且深的焦點深度，且因可獲得高的光密度輸出，所以 可執行高速且高精細造形。再者，因各光纖光源的輸出變大， 使得爲獲得所期望的輸出所必要的光纖光源數變少，所以可 - 61 - 200405032 圖謀光造形裝置的低成本化。 特別是在本實施形態中，由於使光纖的出射端的包層直徑 設定爲較入射端的包層直徑還小，所以發光部直徑係變更小， 可圖謀光纖陣列光源更加高亮度化。依此成爲可更精細的造 形。 〔雷射驅動方法〕 光纖陣列光源所包含之各GaN系半導體雷射係可爲連續 驅動也可爲脈波驅動。依脈波驅動的雷射光來曝光係可防止 熱擴散，成爲可高速且高精細的造形。脈波寬係短者較 好，lpsec〜lOOnsec爲較佳，lpsec〜300psec係更好。此外，GaN 系半導體雷射係難以產生稱爲 c〇D (光學損害）之光出射 端面的破損，係具高可靠性，且可容易實現lpsec〜300psec的 脈波寬。 〔其他曝光方式〕 一般在造形3維模型之光造形方法中，伴隨樹脂之硬化的 重合收縮、依硬化時產生之重合熱而成高溫的樹脂係在常溫 被冷卻而產生依熱應變所造成之硬化收縮，伴隨著此等硬化 之收縮，係具有造形物熱應變、造形精度降低之問題。特別 是，在將包含複數個畫素的區域作同時曝光（面曝光）以造 形成平板狀之場合，造形物係相對於積層方向以凸狀朝下側 翹曲。爲了防止依此種硬化收縮之應變的發生，係將曝光區 域分成複數個區域再加以依序曝光者係較佳。 例如，把光硬化性樹脂之同一液面作複數次掃描，在第1次 的掃描，在曝光造形形狀的輪郭線且使光硬化性樹脂硬化之 後，在第2次以後的掃描，曝光輪郭線的內部且使光硬化性 樹脂硬化，依此、應變的發生係被防止。 -62 - 200405032 又，如第34 ( A )圖所示，把曝光區域分割成多數個畫素，將 此多數個畫素區分成，由相互不鄰接的畫素1 〇2所構成之第1 群，和由相互不鄰接的畫素104所構成之第2群等2群，在對 各群作掃描曝光也可以。畫素1 0 2和畫素1 0 4係構成黑白相 間圖案般地交互配列著。在第34 ( A )圖係表示曝光區域的 一部分，但是在使用具備有例如100萬畫素的DMD之曝光頭 的場合，可因應DMD的畫素數把曝光區域分割成100萬個畫 素。 首先，在第1次的掃描，如第34 ( B )圖所示，曝光屬第1群 的畫素102,在第2次的掃描，如第34(C)圖所示，曝光屬 第2群之畫素104。藉此，畫素和畫素之間隙被掩埋，光硬化 性樹脂之液面的曝光區域全面被曝光。 在第1次的掃描、同時被曝光的第1群之畫素彼此相互不 鄰接，在第2次的掃描、同時被曝光的第2群之畫素彼此也 相互不鄰接。如此鄰接的畫素因爲沒有被同時曝光，所以依 硬化收縮的應變係不傳至鄰接的畫素。亦即，把曝光區域全 體予以同時曝光時，依硬化收縮的應變係伴隨著傳播曝光區 域而變大，雖然會產生相當的應變，但是在此例中，硬化收縮 係僅在1畫素的範圍產生，依硬化收縮的應變不傳至鄰接的 畫素。藉此，在積層造形物中之應變的產生係顯著被抑制，成 爲可高精度的造形。 上述之實施形態的曝光裝置中，藉由掃描器之1次的掃描 可將光硬化性樹脂的液面以任意的圖案曝光。因此，依複數 次的掃描所分割之各區域曝光係比較容易。 〔光硬化性樹脂〕 以在光造形所使用之液狀的光硬化性樹脂而言，一般係使 200405032 用依光自由基聚合反應而硬化之聚胺曱酸酯系樹脂、或依光 陽離子聚合反應而硬化之環氧樹脂系樹脂。又，可使用在常 溫爲凝膠狀態、當受雷射照射而被賦予熱能時則轉移成溶膠 狀態之溶膠-凝膠變換型的光硬化性樹脂。在使用溶膠·凝膠 變換型的光硬化性樹脂之光造形方法中，因爲係在凝膠狀而 非液狀狀態的造形面執行曝光、硬化，所以造形物係形成在 凝膠狀的樹脂中，因此具有不需用以支持造形物的支撐部分 或連結部分之優點。 在對指定區域執行同時曝光的線曝光、區域曝光之場合， 對上述之溶膠-凝膠變換型的光硬化性樹脂使用添加有熱傳 導性之樹脂係較佳。藉由添加熱傳導性之塡充劑，熱擴散性 係被發揮，在造形物中之熱應變的發生被防止。特別是，在溶 膠-凝膠變換型之光硬化性樹脂中，與通常的樹脂不同、可在 不使塡充劑沈降之情形下均一地分散，所以可維持熱擴散 性。 (第3實施形態） 第3實施形態係因應畫像資料，以由空間光調變元件所調 變的光束使粉末燒結以形成燒結層，將該燒結層積層以造形 由粉末燒結體所成的3維模型之積層造形裝置的實施形態。 〔積層造形裝置〕 有關本發明的實施形態之積層造形裝置係如第35圖所示， 具備有在上方開口之容器156。容器156內係以2片隔板151 在長度方向區隔成3個，在中央部配置著用以製作造形物之 造形部153,在此造形部153的兩側係配置有把造形所使用之 粉末150對造形部153供給之供給部155。 以粉末150而言，可使用工程塑膠、金屬、陶磁、砂、以 200405032 及臘等之粉末。例如，可使用丙烯酸、尼龍（Nylon ) 1 1之複 合材、成珠化（Beads )尼龍11、合成橡膠、不鏽鋼316、 不鏽鋼4 2 0、銷石砂、以及矽砂等之粉末。 構成造形部153的底面之載物台152係由支持部154所支 持，且藉由安裝在支持部1 54之未圖示的驅動機構而構成可 昇降。又，在容器156的內側上部，用以使容器156內的粉末 150表面平坦化之逆轉輥157係，在副掃描方向以可往復移動 地被安裝著。造形部153之載物台152降下時，因爲造形部153 的粉末150不足，所以利用逆轉輥157由供給部155供給粉 末150。然後，利用逆轉輥157朝與移動方向逆方向之旋轉所 供給的粉末150係在造形部153上被押壓且擴展，粉末150 的表面係被平坦化。 於收容在容器156內之粉末150的表面上方，箱狀的掃描 器162係配置成其長度方向.朝容器156的寬度方向。掃描器 162係由安裝在寬度方向的兩側面之2根支持臂160所支持。 此外，掃描器1 62係連接在未圖示之用以控制其之控制器。 又，在容器156之長度方向的兩側面係各自設置有往副掃 描方向延伸之導引部158。2根支持臂160的下端部係在此 導引部158,以沿著副掃描方向可往復移動地被安裝著。此外， 在此積層造形裝置係設置有未圖示之驅動裝置，用以把支持 臂160連同掃描器162 —起沿著導引部158驅動。 掃描器162係如第36圖所示，（例如，3行5列）具備有略 矩陣狀配列之複數（例如，1 4個）個曝光頭1 6 6。 在此例中，因爲與容器1 5 6之寬度方向的寬度之關係，係在 第3行配置了 4個曝光頭166。此外，在表示第m行的第η 列所配列之各個曝光頭之場合，係表記爲曝光頭1 66 mn。 200405032 依曝光頭1 6 6的曝光區域1 6 8係以副掃描方向爲短邊之矩 形狀。因此，伴隨著掃描器1 6 2的移動，粉末1 5 2的表面係形 成各曝光頭1 66帶狀之已曝光區域（燒結區域）1 70。此外， 在表示第m行之第η列所配列之各個曝光頭的曝光區域之 場合，係表記爲曝光區域168mn。 曝光頭166u〜166 mn之各個構成、動作、及變形例係與 第1實施形態相同。但是以GaN系半導體雷射LD1〜LD7而 言.，在350nm〜450nm之波長範圍，也可使用具備上述之405nm 以外之振盪波長的雷射。波長350〜450nm之雷射光係光吸 收率大，對燒結能量之變換係容易，所以對粉末的燒結，亦即即 可能高速地進行造形。雷射光的波長帶域爲350〜420nm係 較好。在使用低成本的GaN系半導體雷射這點說來，波長 405nm爲特別好。 又，於DMD50,在主掃描方向配列有800個微鏡的微鏡列 雖然在副掃描方向配列有600組，但是由控制器僅控制使一 部分的微鏡列（例如，800個X 100列）被驅動這點也與第1 實施形態相同。 上述之光造形裝置中，因應1層分之曝光圖案的畫像資料 係被輸入至未圖示之連接到DMD50的控制器、且暫時記憶 在控制器內之圖框記憶體。此畫像資料係以2進制（點記錄 之有無）來表示構成畫像之各畫素的濃度資料。 掃描器1 62係依未圖示的驅動裝置，沿著導引部1 5 8由副 掃描方向之上游側往下游側以一定速度移動。掃描器1 62的 移動一被開始，則記憶在圖框記憶體之畫像資料係各複數線 被依序讀出，依據在資料處理部所讀出之畫像資料以生成對 各曝光頭1 66之控制信號。然後，利用鏡驅動控制部，依據生 200405032 成之控制信號，各曝光頭166之DMD50之微鏡各自係被控制 開啓、關閉。 當由光纖陣列光源66對DMD 50照射雷射光時，DMD50之 微鏡爲開啓狀態時被反射之雷射光係依透鏡系5 4、5 8而成 像於粉末150的表面（被曝光面）56上。如此一來，光纖陣 列光源66所出射的雷射光係被各畫素開啓、關閉，粉末1 50 被以略同於DMD50之使用畫素數量的畫素單位（曝光區域 168)曝光且燒結，亦即，溶融後而硬化。又，藉由掃描器162 被以一定速度移動，粉末150的表面係被執行副掃描，以形成 各曝光頭166帶狀的燒結區域170。 依掃描器162的1次副掃描，在1層分的燒結終了時，掃描 器162係依未圖示的驅動裝置，沿著導引部158而回復到位 在最上游側之原點。接著，依未圖示的驅動機構使造形部153 之載物台152降下指定量時，依載物台152的降下而不足的 粉末150係由供給部155所供給、粉末150的表面係依逆轉 輥1 5 7而被平坦化。然後，次一層的畫像資料係在輸入至連 接到DMD50之未圖示的控制器時，再度執行依掃描器丨62之 副掃描。 如此一來，藉由反覆執行依副掃描的曝光（燒結）和載物 台之降下而重疊燒結層，以形成3維模型。 如同以上所說明，本實施形態之積層造形裝置係具備DMD， 其在主掃描方向配列有8 0 0個微鏡之微鏡列係沿副掃描方向 配列600組，但是因爲利用控制器控制僅一部分的微鏡列被 驅動，所以與驅動全部的微鏡列之場合相較下，每1線之調變 速度係變快。藉此在高速之曝光、造形係成爲可能。 又，用以照明DMD之光源係使用把合波雷射光源之光纖的 200405032 出射端部作陣列狀配列之高亮度的光纖陣列光源，所以可獲 得高輸出且深的焦點深度，且可獲得高的光密度輸出，所以執 行可高精細造形。且因爲各光纖光源的輸出變大，所以爲獲 得期望之輸出所必要的光纖光源數變少，係可圖謀積層造形 -, 裝置之低成本化。 . 特別是在本實施形態中，由於設定光纖的出射端之包層直 徑爲較入射端之包層直徑還小，所以發光部直徑係變小而可 圖謀光纖陣列光源之更高亮度化。依此，更高精細的造形係 成爲可能。 此外與第2實施形態同樣地也可以被脈波驅動的雷射光來 ® 曝光，將同一燒結層分成複數次來曝光也可以。 (第4實施形態） 第4實施形態係使用第1實施形態的曝光裝置來製造形成 有微小流路的合成反應用微晶片之實施形態。 〔合成反應用微晶片〕 合成反應用微晶片係如第37圖所示，係在玻璃等所形成的 平板狀基板1 5 0上重暨保護基板2 0 2而構成。基板1 5 0低厚 度通常爲0.5mm〜2.0mm程度，保護基板202之厚度通常爲 φ 0.1mm〜2.0mm程度。在各保護基板202上係貫通設置有用 以注入試藥之注入口 204a、204b，以及將試藥反應後得到之 反應液予以排出的排出口 2 0 6。在基板1 5 0係設置有使試藥 或反應液流通之微小流路208。微小流路208係配設成在由 注入口 204a、204b被各自注入的試藥在合流點210合流之 後，朝排出口 206被排出。微小流路之溝寬係數十〜數百μ m， 而1 0 μ m〜5 0 // m係特別好。溝寬爲1 〇 # m〜5 〇 # m的微小流 路係流路阻力比較小，所以可獲得良好的尺寸效應。 -68- 200405032 對此反應用微晶片的注入口 204a、204b各自注入試藥，當 由排出口 206側吸引時，試藥係在微小流路208流通且在合 流點210被混合而反應。依此可合成所期望的物質。獲得之 反應液係在微小流路208流通且自排出口 206被排出。依自 此排出口 206獲得之反應液的分析，可相同於在通常定比之 反應，執行反應生成物之識別或定量。 〔微晶片之製造方法〕 接著參照第38圖以針對上述合成反應用微晶片的製造方 法加以說明。此製造方法係由把光阻膜曝光之曝光工程、將 光阻膜部分除去以圖案化之圖案化工程、將基板蝕刻以形成 微小流路的蝕刻工程、以及將形成有微小流路的基板和保護 基板予以接合的接合工程等所構成。以下茲說明各工程。 如第38(A)圖所示，在基板150上以旋轉塗布法等方式 形成光阻膜212之後，如第38 ( B)圖所示，依微小流路208 的圖案將光阻膜212曝光，如第38 ( C )圖所示，使曝光部分 214溶解於顯影液且加以除去。在此，藉由將光阻膜212以高 的位置精度予以圖案化，可高精度地形成微小流路208。此外， 有關光阻膜2 1 2的曝光工程係在後面敘明。 接著，如第38 ( D)圖所示，使用被圖案化的光阻膜21 2,由 表面蝕刻基板150以形成微小流路208,如第38 ( E )圖所示， 除去剩餘的光阻膜212。基板150的蝕刻係可執行乾式蝕刻 及濕式蝕刻中任一者，但是由於是微細加工，所以高速原子線 (FAB )鈾刻等之乾式鈾刻係適合的。 接著，如第38 ( F )圖所示，利用超音波加工等方式在保護 基板202形成成爲注入口 204a、204b及排出口 206的貫通 孔。然後如第38 ( G)圖所示，使保護基板202和基板150之 200405032 形成有微小流路2 0 8的面成爲對向般地將兩基板重疊密接而 加以固定。例如可使用UV接著劑來固定。在保護基板2〇2 之形成有微小流路2 0 8的面以旋轉塗布法等方式塗布υ V接 著劑，在使基板150和保護基板202密接之後，再照射紫外線 . 而接著。 此外，基板150和保護基板202爲以玻璃形成之場合，以氫 氟酸將兩基板的表面溶解再接合也可以。 〔光阻膜之曝光〕 以下，針對光阻膜之曝光工程加以詳細說明。在此曝光工 程中，使用空間光調變兀件，把波長3 5 0 n m〜4 5 0 n m的雷射光 _ 因應微小流路的形成圖案資料作調變，再以調變後的雷射光 將光阻膜212作數位曝光。爲了以更高精度來執行曝光，以 由高亮度光源所出射之深的焦點深度之雷射光來曝光係較 佳。 光阻膜212係可使用在印刷配線基板（PWB ; Printed Wiring Board )的製造工程所使用之乾式阻體膜（DFR ; Dry Film Resist )或電極沈積阻體。此等DFR或電極沈積阻體，與在半 導體製程所使用的阻體相較下係可厚膜化，可形成厚度10 // m φ 〜4 0 // m的膜。 又，藉由將光阻膜積層複數層而可圖謀更厚膜化。此時， 如第39(A)圖所不，形成第1光阻膜212a,將指定區域214a 曝光後，如第39 ( B)圖所示，在第1光阻膜212a上形成第2 光阻膜212b，使用數位曝光之定比機能，將對應指定區域214a 的區域214b作曝光。如第39 ( C )圖所示，當除去被曝光之 區域214a及區域214b時，係形成依阻體的深溝。此外，在此 例中，係針對把阻體膜作2層積層的例子加以說明，但是把阻 -70 - 200405032 體膜作3層、4層的積疊、利用數位曝光之定比機能將相同 位置曝光係可形成更深的溝。此外，在此，曝光係在不透過顯 影工程之下，重疊2層以上作說明，但是把第1層曝光，其後顯 影，顯影後的基板之延伸或阻體之膨潤等係利用數位定比作 補正，把第2層曝光般地在顯影後作曝光且第3層、第4層 也同樣作曝光也可以。依此、顯影時之圖案的位置偏差也可 高精度地補正。 又，如此藉由將光阻膜212厚膜化，可形成依阻體的深溝，可 藉蝕刻而在基板202形成精度佳的深溝（微小流路）。例如， 由第40 ( A )及40 ( B )圖可知，在利用FAB蝕刻來形成相 同溝寬之微小流路時，當光阻膜2 1 2爲薄時，依斜向光基板 150可易於側面蝕刻，光阻膜212爲厚時，因受阻使得斜向光 係難以入射，基板150係變難以被側面鈾刻。藉此，可在基板 150形成精度佳的深溝。又，容易乾式蝕刻般地，使用位置及 圖案寬度等可將第2層、第3層的圖案作數位補正。 在形成溝寬1 0 // m〜50 // m之微小流路的場合，光阻膜2 1 2 之厚度係ΙΟμιη〜50//m較好，10/zm〜100/zni更好。 又，在藉由利用蝕刻溶液之濕式蝕刻來形成微小流路之場 合，如第41圖所示，在光阻膜212也可把推拔狀擴開的開口 2 1 6形成圖案。因爲開口 2 1 6係推拔狀擴開，所以容易使蝕刻 溶液浸入。 〔微小流路之形成〕 因應曝光圖案的畫像資料係被輸入到連接至DMD50之未 圖示的控制器，而暫時記憶在控制器內之圖框記憶體。此晝 像資料係把構成晝像之各畫素的濃度以2進制（點記錄之有 無）所表示的資料。 200405032 吸附有形成光阻膜的基板150之載物台152,係依未圖示的 驅動裝置，沿著導引部158由閘門160之上游側往下游側被 以一定速度移動。載物台152係在通過閘門160下方之際， 當安裝在閘門1 60的檢測感測器1 64檢測到基板1 50的前端 -. 時，則被記憶在圖框記憶體的畫像資料係依序被讀出複數線，^ 依據在資料處理部讀出的畫像資料以生成對各曝光頭1 66之 控制信號。然後，利用鏡驅動控制部，依據所生成之控制信 號，各曝光頭166之DMD50的微鏡各自被控制開啓、關閉。 亦即，於DMD50,在主掃描方向配列有800個微鏡的微鏡列係 在副掃描方向配列有600組，其全部要使用。 · 當由光纖陣列光源66對DMD50照射雷射光時，在DMD50 的微鏡爲開啓狀態時所反射的雷射光係利用透鏡系54、5 8 而成像於形成在基板150上之光阻膜的被曝光面56上。如 此一來，由光纖陣列光源66所出射的雷射光係在各畫素被開 啓、關閉，光阻膜係在與DMD50之使用畫素數略同數量的畫 素單位（曝光區域168)被曝光。又，藉由基板150連同載 物台152 —起被以一定速度移動，使得形成在基板150上之 光阻膜經由掃描器162而在與載物台移動方向相反之方向上 φ 被執行副掃描，形成各曝光頭166帶狀的已曝光區域170。 依掃描器1 62的光阻膜之副掃描終了而以檢測感測器1 64 檢測基板150的後端時，載物台152係依未圖示的驅動裝置， 沿著導引部158返回位在閘門160之最上游側的原點，再次 沿著導引部1 5 8自閘門1 60的上游側至下游側以一定速度移 動。 如同.以上說明，在本實施形態中，因爲在光阻膜的曝光工程 中使用DMD等之空間光調變元件，所以因應微小流路的形成 - 72 - 200405032 圖案而可將雷射光在各畫素作調變，可以被調變的雷射光將 光阻膜予以高速且高精細地曝光。如此，在曝光工程中，因爲 可把在任意圖案之光阻膜予以高速且高精細地曝光，經由次 一圖案化工程及蝕刻工程，可高速且高精度地形成任意圖案 之微小流路。 如同上述，因爲在任意圖案之曝光爲可能，所以可容易地形 成複雜圖案之微小流路。又，因爲可高速曝光，所以可於大面 積的玻璃基板上短時間形成微小流路。再者，因爲係數位曝 光、所以係不要各圖案之遮罩，可低成本地形成微小流路。 又，由於在光阻膜使用DFR或電極沈積阻體，所以與在半 導體製程所使用的阻體相較下係可厚膜化，可形成厚度1 0 // m 〜40 // m的光阻膜。如此，藉由將光阻膜厚膜化，可依蝕刻形 成精度佳之深溝的微小流路。 又，可將光阻膜積層複數層以圖謀厚膜化。 此場合係使用數位曝光之定比機能，可將複數積層之光阻 膜的相同位置曝光。 又，本實施形態中，於曝光裝置，使用合波雷射光源構成光 纖陣列光源，同時將光纖之出射端包層直徑設爲比入射端包 層直徑還小，所以發光部直徑變更小，被圖謀光纖陣列光源 之高亮度化。藉此，可以深的焦點深度之雷射光將光阻膜更 高精細地曝光。例如，可爲光束直徑l//m以下、解像度0.1 //m以下之超高解像度的曝光，在精度佳地形成溝寬1〇 μχη〜 5〇//m的微小流路上係很充分。。 〔高速驅動方法〕 通常，於DMD，在主掃描方向配列有800微鏡的微鏡列係 在副掃描方向配列有600組，但是依控制器僅控制一部分的 200405032 微鏡列（例如，8 0 0個x 1 0列）被驅動也可以。d M D之資料 處理速度有其限度，由於與使用的畫素數成比例且每丨線之 調變速度被決定，所以僅使用一部分的微鏡列，每1線的調 變速度係變快。藉此可縮短曝光時間。一方面，在連續地使 -照射頭對曝光面相對移動之掃描方式的場合，副掃描方向之 畫素沒有必要全部使用。 〔微晶片之其他製造方法〕 上述的實施形態中，雖然以在構成微晶片之基板上直接形 成微小流路的例子加以說明，但是在模製作用的基板上形成 微小流路以製作模型，再藉由使用有此模型的模衝鍛或玻璃 · 模製，也可能製造具備微小流路之微晶片。 〔具備有微小流路之微晶片〕 上述的實施形態中，雖然以製造合成反應用微晶片爲例加 以說明，但是在本發明之微小流路的形成方法，係也適用在製 造具備有微小流路之其他種類的微晶片之場合。 以其他種類之微晶片而言，係可舉例有癌症診斷晶片、細 胞生化學晶片、環境計測晶片、層析晶片、電泳晶片、蛋白 質晶片、以及免疫分析晶片等等。此等晶片雖然因應各晶片 φ 的機能而形成不同圖案之微小流路，但依本發明之微小流路 之形成方法，微小流路之形成圖案所因應的數位曝光可形成 蝕刻遮罩，所以可容易對應多種類的生產。又，也可容易形成 具備有複數個機能之微小流路。特別是依本方法可大面積的 圖案化，藉由良率提升和收益提升，成爲可低成本的微小流 路形成方法。 又，本發明之微小流路之形成方法並不局限在實驗室晶片 之微小流路，可作爲在基板上形成微細溝的方法而廣範地使 - 74- 200405032 用。 (第5實施形態） 第5實施形態係與第1實施形態之曝光裝置同樣爲使用高 輸出且高亮度光纖陣列光源之漂白處理裝置的實施形態。 〔漂白處理裝置之構成〕 有關本發明實施形態之漂白處理裝置係如第42圖所示，具 備有把長尺狀的布200沿著指定搬送路加以搬送之複數個搬 運滾筒202。又，漂白處理裝置係具備藥液槽206,係被貯留有 包含氧化劑或還原劑之藥液204,該藥液槽206的搬送方向下 游側係設置有雷射照射部208。在此雷射照射部208中，如第 43圖所示，對布200脈波照射雷射光之照射頭500係配置在 放置於搬送路的布200之上方。 照射頭500係如第44 ( A)及44 ( B )圖所示，係由多數（例 如，1000條）之光纖30沿與副掃描方向正交之方向被配置成 1列的光纖陣列光源506、以及把自光纖陣列光源506所出 射的雷射光僅集光在與光纖30之出射端的配列方向成正交 的方向而在布200之表面（掃描面）56上成像之圓柱狀透 鏡510所構成。此外，在第44圖中，有關光纖30之入射端被 結合之光纖陣列光源506的模組部分係省略了圖示。 圓柱狀透鏡5 10在指定方向具有曲率且在與指定方向正交 之方向係呈長的形狀，長度方向（與指定方向正交之方向） 係成爲與光纖30的出射端之配列方向平行般地配置。此外， 連同圓柱狀透鏡5 1 0 —起和依複眼透鏡系而均一化照明光學 系統或光量分布補正光學系統使用也可以，而光量分布補正 光學系統係具備有：對於雷射出射端之配列方向，接近透鏡之 光軸的部分爲擴大光束且離開光軸之部分爲縮小光束並且對 -75- 200405032 與此配列方向正交之方向係使光照其原樣通過之機能。 光纖陣列光源506係如第29圖所示，具備多數之雷射模組 64,各雷射模組64係與多模光纖30之一端結合。此外，各雷 射模組64的構成、動作、及變形例係與第1實施形態相同。 在各雷射模組6 4中，雷射光束B1〜B 7對多模光纖3 0之結合 效率爲0.85，GaN系半導體雷射LD1〜LD7之各輸出爲30mW 時，有關被陣列狀配列之光纖3 1係各自在連續動作中可獲得 輸出180mW ( = 30mWx 0.85x 7 )之合波雷射光束B。 又，上述之合波雷射光源中，係把GaN系半導體雷射LD1〜 LD7各自作脈波驅動，可獲得指定之脈波寬的雷射光。藉由 脈波照射雷射光使發熱受到抑制，以防止由熱所造成之纖維 的損傷（對布之損傷）。 各脈波之峰値功率係300mW〜3W爲較佳。在峰値功率爲 3 0 0 m W之場合，脈波寬爲1 0 n s e c (奈秒）〜1 0 // s e c (微秒）， 每1秒之脈波數爲104〜1〇7係較佳。在此場合之能率約爲10 %。又，峰値功率爲3W之場合，脈波寬係lnsec〜l//sec，每1 秒之脈波數爲104〜107係較佳。此場合之能率約爲1·〇%。 此外，GaN系半導體雷射係如前述難以產生稱爲COD (光 學損害）之光出射端面的破損，係可實現高可靠性且高峰値 功率。 〔漂白處理裝置之動作〕 以下，兹就上述之漂白處理裝置的動作加以說明。 當把經過在纖維付著有油成分等之夾雜物予以除去之精練 工程、以及把糊劑除去之去糊工程之染色前的布200對上述 漂白處理裝置供給時，布200係伴隨著搬運滾筒202之旋轉 而在箭頭A方向被搬送，而被浸漬在藥液槽2 0 6內之藥 '液 200405032 2〇4。浸漬時間係〇. 1〜1小時爲較佳。 藥液204係包含有指定濃度之氧化劑或還原劑。以氧化劑 而言，係可使用過氧化氫（H 2 0 2 )、過硼酸鈉（NaB03 4H20)、 過錳酸鉀（ΚΜη04 )等之過氧化物或、氯化鈣粉（CaCl CIO )、 次亞氯酸鈉（NaCIO )、次氯酸鈉（NaC102 )等之氯化合物等 等。又，以還原劑而言，係可使用硫化鈉（Na2S 2 0 4 )、硼酸鈉 (NaBH4 )等等。在此當中，由抑制纖維的損傷之觀點看來，氧 化還原作用爲弱的硼酸鈉係特別好。 以溶媒而言，係可使用水或甲醇、乙醇等之低級醇。氧化 劑或還原劑的濃度係1%〜10%爲較佳。又，也可在藥液204 適宜地添加使氧化劑、還原劑活性化的活性化助劑。 接著，由藥液槽206取出的布200係以浸漬有藥液204的 狀態被供給至雷射照射部208。以雷射照射部208而言，照射 頭5 00之由光纖陣列光源506所出射之雷射光係依圓柱狀透 鏡5 1 0僅集光在與光纖30之出射端的配列方向成正交的方 向上，在布200之表面56以線狀被成像。此圓柱狀透鏡510 係例如，以在短軸方向3倍、在長軸方向爲1倍之倍率作爲 放大光束直徑之放大光學系統來作用。又，布200被以一定 速度搬送，利用來自照射頭500之線光束502而在與搬送方 向相反的方向被副掃描。 如此，藉由對浸漬在藥液204的布照射雷射光，附著在纖 維之著色成分及藥液204中的氧化劑或還原劑係被活性化， 兩者之反應性提高，可獲得良好的漂白效果。爲了防止熱所 造成之纖維損傷且獲得活性化效果，所以照射之雷射光的波 長爲350nm〜450nm，而400nm〜415nm更佳。一方面，在氧化 劑或還原劑之反應性高時，對光學系統之負荷係少，則以半導 200405032 體雷射可高輸出化的400nm以上之波長較佳。 在此算出在布200之表面上的光密度。於照射頭之合波雷 射光源，GaN系半導體雷射LD1〜LD7之各輸出爲30mW時， 被陣列狀配列之光纖30各自係可獲得輸出180 mW( = 30mWx 0·85χ 7)之合波雷射光束B。因此，在1000條多模光纖30成 1列配列的光纖陣列光源之場合，在雷射出射部68之連續動 作的輸出爲約180W。 在光纖陣列光源506之雷射出射部68，按照此高亮度的 發光點係沿著主掃描方向被配列成一列。由於將來自單一的 半導體雷射的雷射光結合在1條光纖之以往的光纖光源係低 輸出，所以若未多數列配列則不能獲得所期望之輸出，但本實 施形態所使用的合波雷射光源係高輸出，所以少數列例如即 使1列也可獲得所期望的輸出。 又，作爲多模光纖30,在使用包層直徑=125 // m、核心直徑 二50//m、NA= 0.2之STEP INDEX型光纖之場合，在雷射出 射部68之光束直徑爲50//mx 125mm。當在短軸方向以3倍、 長軸方向爲1倍的倍率來放大光束直徑時，照射區域506之 面積係成爲150//mx 125mm。 一般，利用雷射加速器的漂白處理中，2000mJ/cm2〜 20000m；i/cm2之範圍的高光密度係有必要，在本實施形態中， 藉由適宜變更要陣列化的光纖條數、合波之雷射光束的條數， 可容易實現此範圍的光密度。當把漂白處理所要之在曝光面 上的光密度設爲10000m】/cm2時，以GaN系半導體雷射LD1〜 LD7之峰値功率爲3W、脈波寬爲lOOnec每1秒之脈波數爲 105、能率1%的條件對布200之表面作脈波照射時，可獲得 在曝光面上之光密度爲每1脈波lOmJ/cm2且能以i.4cm/s作 200405032 局速曝光。 一方面，在使用準分子雷射以取代GaN系半導體雷射之合 波雷射光源的場合時，反覆頻率數變低，所以將相同區域曝 光需要約1 0倍以上的速度。 如同以上之說明，本賓施形態之漂白處理裝置中，利用把高 輸出且高亮度的合波雷射光源予以陣列化的光纖陣列光源， 對浸漬有藥液的布脈波照射雷射光，在布表面可獲得高能量 密度。依此，把藥液及著色成分之至少一方活性化，促進漂白 反應，可獲得高的漂白效果。又，因爲雷射脈波之能率係1 %， 所以發熱被抑制，可防止纖維的損傷。 又，本實施形態之漂白處理裝置中，因爲在雷射照射部使用 可連續驅動且輸出穩定性優越之半導體雷射所構成的合波雷 射光源，所以與使用準分子雷射的漂白處理裝置相較之下，係 可以任意反覆頻率數、脈波寬來作脈波驅動，藉由將反覆頻 率數設高，係可以數倍之高速來執行漂白處理。又，與使用準 分子雷射的漂白處理裝置相較下，能量效率係高10%〜20%， 維修係容易且低成本。 特別是，GaN系半導體雷射爲共有結合性，所以稱爲COD(光 學損害）之光出射端面的破損係不易產生，爲高可靠性且可 實現高峰値功率。例如，以脈波寬l〇〇nsec、能率1%的條件， 可實現3 W的高峰値功率。此外，在此場合的平均輸出係 30mW 〇 ' 又，本實施形態之漂白處理裝置中，藉由光纖陣列光源之 光纖的陣列配列，可容易地獲得線光束。通常，纖維製品係形 成爲長尺狀，所以以集中在短軸方向且在與其正交之長軸方 向擴展的線光束作雷射照射係爲合理的。又，藉由增加要陣 200405032 列化之光纖的條數，在維持能量強度及其均一性的狀態下可 以伸長線光束長度。此外因係使用波長3 50nm〜450nm的雷 射光，所以沒有使用對應紫外線之特殊材料的光學系統來生 成線光束之必要，所以低成本。 . 〔多頭式〕 上述的實施形態中，係針對設計具備有單一照射頭的雷射 照射部之例加以說明，但是在線光束之長軸方向長度不足的 場合時，也可將複數個照射頭配列在長軸方向。 〔半導體雷射〕 上述中，作爲半導體雷射，係使用將來更可期待高輸出化之 馨 振盪波長3 5 0 n m〜4 5 0 n m的G a N系半導體雷射爲例加以說明， 但半導體雷射並非限定爲GaN系半導體雷射。例如，可使用 由ΠΙ族元素（Al，Ga，In)和氮氣所構成之氮化物半導體雷射。 氣化物半導體係可爲以AlxGayliii.x.yN ( X + yS_l)表示之 任何組成所構成。經適宜地變更組成可獲得振盪波長200nm 〜450nm的半導體雷射。 〔放大光學系統之其他例〕 上述之照射頭500係如第45 ( A)及45 ( B)圖所示，可由 φ 如下所構成：光纖陣列光源506,具備有多數（例如，1000個） 光纖30的出射端（發光點）沿著與副掃描方向正交之方向 成1列配列之雷射出射部；第1圓柱狀透鏡512,使由光纖陣 列光源506所出射之雷射光僅集光於和光纖30之出射端的 配列方向成正交的方向；第2圓柱狀透鏡514,使集光在與光 纖3 0之出射端的配列方向正交之方向的雷射光僅集光在配 列方向而成像在布200之表面（掃描面）56上。 第1圓柱狀透鏡512係在指定方向具有曲率且且在與指定 一 8 0 - 200405032 方向正交的方向呈長的形狀，長度方向（與指定方向正交之 方向）係成爲與光纖30之出射端的配列方向成平行般地配 置。又，第2圓柱狀透鏡5 1 4係在指定方向具有曲率且在該 指定方向呈長的形狀，曲率方向（指定方向）係成爲與光纖30 之出射端的配列方向成平行般地配置。 在此照射頭中，由光纖陣列光源5 0 6所出射的雷射光係依 第1圓柱狀透鏡512而被集光在與光纖30之出射端的配列 方向成正交之方向且依第2圓柱狀透鏡514而被集光在光纖 30之出射端的配列方向，且以線狀被成像在掃描面56上。 此等圓柱狀透鏡512、514係例如，在短軸方向以3倍，在長 軸方向以10倍的倍率來放大光束直徑之作爲放大光學系統 來作用。又，在第42圖中，布200係被以一定速度搬送，利用 來自照射頭500之線光束，以在與搬送方向相反的方向上被 副掃描。如此一來，藉由光學系統將光纖陣列光源的光束放 大，可將寬的曝光面曝光。又，利用放大光束，可獲得更深的焦 點深度，可將高速搬送的布均一地照明。 在此要算出在曝光面上之光密度.。於照射頭之合波雷射光 源使用峰値功率爲6W的多模雷射之場合，利用7個LD係可 獲得峰値功率爲36 W之合波雷射光束B。因此，在1 000條 的多模光纖30配列成1列的光纖陣列光源時，在雷射出射部 68之峰値功率約爲36kW。 又，作爲多模光纖30,在使用有包層直徑=125//m、核心直 徑= 50//m、ΝΑ=0·2之STEP INDEX型光纖的場合，在雷射 出射部68之光束直徑係50//mx 125mm。當短軸方向以3倍， 長軸方向以10倍的倍率來放大光束直徑時，照射區域506的 面積爲150//mx 1250mm。因此，在以峰値功率6W、脈波寬 200405032 lOOnsec、能率1%、每1秒之脈波數i〇5的條件下，對布200 的表面作脈波照射時，在曝光面上之光密度爲每1脈波 2mJ/cm2。即使估計依光學系統的損失爲約80% ,在曝光面上 之光密度爲每1脈波1.5mJ/cm2。因此，以10000mJ/cm2的光 ， 密度曝光時，可將寬1.25m的布以0.2cm/s作高速曝光。 〔光纖之變形例〕 上述的實施形態中，係針對在合波雷射光源使用包層直徑 爲125//m且均一的光纖爲例加以說明，但是與第1實施形態 同樣地，可將光纖之出射端的包層直徑設爲比入射端之包層 直徑還小。 籲 藉由把光纖之出射端的包層直徑設小，發光部直徑係變更 小，可圖謀光纖陣列光源之高亮度化。 〔合波雷射光源之變形例〕 第24 ( A)及24 ( B)圖所示之多段構造的利用雷射陣列 之合波雷射光源係藉由多腔雷射之多段配置和准直透鏡的陣 列化，特別可圖謀高輸出化。藉由利用此合波雷射光源，可構 成更高亮度的光纖陣列光源或束光纖光源，所以作爲構成本 實施形態之照射頭的雷射光源的光纖光源係特別適合。 φ 要計算在此場合之曝光面上的光密度。以照射頭之合波雷 射光源而言，藉由使用多重橫模式之晶片，當每1發光點之 峰値功率設爲6W，則依20個LD係可獲得峰値功率103W的 合波雷射光束。因此，在Π 5 0條的多模光纖配列成1列之光 纖陣列光源的場合時，在雷射出射部之峰値功率係1 80 kW。 又，作爲多模光纖，在使用有同樣者之場合時，在雷射出射部 之光束直徑係50 μ mx 220mm。當在短軸方向以3倍，長軸方 向以1 0倍的倍率來放大光束直徑時，照射區域之面積係1 50 - 82 - 200405032 // m 2200mm。因此，在以峰値功率6W、脈波寬lOOnsec、能 率1 %、每1秒之脈波數1 05的條件下，對布的表面作脈波照 射時，在曝光面上之光密度係每1脈波l〇m]/cm2。即使估計 依光學系統的損失約80%，但是在曝光面上之光密度爲每1 脈波8mJ/ cm2。因此，以10000mJ/cm2的光密度曝光時，可將 寬度2.2m的布以1.2cm/s高速曝光。 【圖面之簡單說明】 第1圖係表示在第1實施形態之曝光裝置的外觀斜視圖。 第2圖係表示在第1實施形態之曝光裝置的掃描器之構成 斜視圖。 第3A圖係表示形成在感光材料之已曝光的區域之平面圖， 第3B圖係表示各曝光頭的曝光區域之配列圖。 第4圖係表示在第1實施形態之曝光裝置的曝光頭之槪略 構成斜視圖。 第5A圖係沿著第4圖所示之曝光頭之構成的光軸之副掃 描方向的斷面圖，第5B圖係表示第4圖所示之曝光頭的構成 之側面圖。 第6圖係表示數位微鏡裝置（DMD )的構成之部分放大圖。 第7A及7B圖係用以說明DMD的動作之說明圖。 第8A圖係表示DMD不傾斜配置時之曝光束的配置及掃描 線之平面圖，第8B圖係表示DMD作傾斜配置時之曝光束的 配置及掃描線之平面圖。 第9A圖係表示光纖陣列光源的構成之斜視圖，第9B圖係 第9A圖所示之光纖陣列光源的部分放大圖，第9C圖係表示 在雷射出射部中之發光點的配列平面圖，第9D圖係表示在雷 射出射部中之發光點的其他配列平面圖。 200405032 第1 〇圖係表示多模光纖的構成圖。 第11圖係表示合波雷射光源的構成之平面圖。 第1 2圖係表示雷射模組的構成之平面圖。 第1 3圖係表示第1 2圖所示之雷射模組的構成之側面圖。 第14圖係表示第12圖所示之雷射模組的構成之部分側面 圖。 第15Α圖係表示沿著以往的曝光裝置中之焦點深度的光軸 之斷面圖，第15Β圖係表示沿著在第1實施形態之曝光裝置 中之焦點深度的光軸之斷面圖。 第16Α圖係表示DMD之使用區域的1例圖，第16Β圖係表 示DMD之使用區域之其他例圖。 第17Α圖係DMD之使用區域爲適合之場合的側面圖，第173Β 圖係沿著第1 7 Α圖之光軸的副掃描方向之斷面圖。 第1 8圖係用以說明以掃描器的1次掃描來使感光材料曝 光之曝光方式的平面圖。 第19A及19B圖係用以說明以掃描器的複數次掃描來使 感光材料曝光之曝光方式的平面圖。 第20圖係表示雷射陣列的構成之斜視圖。 第21A圖係表示多腔雷射的構成之斜視圖，第2 1B圖係將 第21 A圖所示之多腔雷射予以陣列配列的多腔雷射陣列之 斜視圖。 第22圖係表示合波雷射光源之其他構成的平面圖。 第23圖係表示合波雷射光源之其他構成的平面圖。 第24A圖係表示合波雷射光源之其他構成之平面圖，第24B 圖係沿著第24A圖之光軸的斷面圖。 第25A、B、C圖係由光量分布補正光學系統的補正之槪 200405032 念說明圖。 第26圖係表不光源爲高斯分布且不執行光量分布補正時 之光量分布圖表。 弟27圖係表不由光量分布補正光學系統補正後之光量分 、 布圖表。 第28A圖係表示沿著結合光學系統之其他不同的曝光頭的 構成之光軸的斷面圖，第28B圖係表示在不使用微透鏡陣列 等之場合時、投影至被曝光面之光像的平面圖。第28C圖係 表示在使用有微透鏡陣列等之場合時、投影至被曝光面之光 像的平面圖。 β 第19圖係表示光纖陣列光源之其他構成之斜視圖。 第30圖係表示以往之雷射掃描方式的積層造形裝置的構 成之斜視圖。 第31圖係表示以往之可動鏡方式的積層造形裝置的構成 之斜視圖。 第32圖係表示第2實施形態之光造形裝置的外觀斜視圖。 第33圖係表示第2實施形態之光造形裝置的掃描器的構 成之斜視圖。 φ 第34Α圖係表示曝光區域之曝光圖案的1例之平面圖，第 34Β圖係表示將第34Α圖之第1群的畫素曝光後之狀態的斜 視圖，第34C圖係表示將第34Α圖之第2群的畫素曝光後之 狀態的斜視圖。 第35圖係表示第3實施形態之積層造形裝置的外觀斜視 圖。 第3 6圖係表示第3實施形態之積層造形裝置的掃描器的 構成之斜視圖。 -85- 200405032 第37圖係表示合成反應用微晶片的構成之斜視圖。 第38A〜38G圖係表示第37圖所示之合成反應用微晶片 之製造工程的順序之斷面圖。 第39A〜39C圖係阻體膜之厚膜化之例子的斷面圖。 * 第40A及40B圖係用以說明伴隨著阻體膜之厚膜化，鈾 . 刻精度會提升之說明圖。 第4 1圖係表示推拔狀圖案化的阻體膜之斷面圖。 第42圖係第5實施形態之漂白處理裝置的槪略構成圖。 第43圖係表示漂白處理裝置之雷射照射部的構成之斜視 圖。 · 第44A圖係沿著照射頭之構成的光軸之光纖配列方向之斷 面圖，第44B圖係表示照射頭之構成的副掃描方向之斷面 圖。 第45A圖係沿著照射頭其他構成的光軸之光纖配列方向之 斷面圖，第45B圖係表示照射頭的構成之副掃描方向的斷面 圖。 【符號說明】 1 · · ·光源 φ 2、4、6 · · •透鏡系10 • P (A) Each coefficient in the above formula (A) is defined as follows. Z: the length of the perpendicular (mm) from the point on the aspheric surface at the position ρ from the optical axis to the vertex of the aspheric surface (plane perpendicular to the optical axis) ρ: the distance from the optical axis ( mm) K: conic coefficient C: paraxial curvature (1 / r, r: paraxial curvature radius) ai: aspheric coefficient of the i-th order (i = 3 to 1 0) is shown in the number shown in Table 2, The symbol E indicates that the number following it is an exponent whose base should be 10, and the number which is expressed by an exponential function whose base is 10 is an exponent multiplied by E. For example, "1. “0E — 02” is taken as an example, which means “1 · 0 HT2”. Fig. 27 is a diagram showing the light quantity distribution of the illuminating light obtained by the paired combination lenses shown in Tables 1 and 2 above. The horizontal axis represents the distance from the optical axis, and the -56-200405032? Axis represents the light amount ratio (%). For comparison, the light quantity distribution (Gaussian distribution) of the illumination light when no correction is performed is shown in FIG. 26. As can be seen from Figs. 26 and 27, by performing correction with the optical amount distribution correction optical system, it is possible to obtain a slightly uniform light distribution compared to the case where correction is not performed. With this, the spotless exposure can be performed with uniform laser light without reducing the light utilization efficiency in the exposure head. In addition, commonly used rod integrators or fly-eye lenses can also be used. [Other imaging optical systems] In the above-mentioned embodiment, although the two groups of lenses as the imaging optical system are provided on the light reflection side of the DMD used by the exposure head, an imaging optical system that enlarges the laser light to form an image can also be arranged . By enlarging the cross-sectional area of the beam line reflected by the DMD, the area of the exposure area (image area) in the exposed surface can be enlarged to a desired size. For example, the exposure head can be constituted as shown in Figure 28 (A): the illuminating device 144 that irradiates the DMD50 and DMD50 with laser light; the lens system that magnifies and reflects the laser light reflected at DMD50 454,45 8; A microlens array 472 having a plurality of microlenses 474 arranged for each pixel; an optical beam array 476 having a plurality of apertures 478 arranged for each microlens of the microlens array 472; and the laser light passing through the aperture is imaged on the exposed surface 56 The lens system is 480,482. With this exposure head, when laser light is irradiated by the illuminating device 144, the cross-sectional area of the beam line reflected by the DMD50 in the opening direction is magnified several times (for example, 2 times) through the lens systems 454 and 458. The amplified laser light is collected by the microlenses of the microlens array 472 and the pixels corresponding to the DMD50, and passes through the corresponding aperture of the aperture array 476. The laser light passing through the aperture is imaged on the exposed surface 56 through the lens systems 480 and 482. In this imaging optical system, the laser light reflected by the DMD50 is projected onto the surface to be exposed 56 by magnifying the large lenses 454 and 458 of 200405032, so that the entire image area is widened. At this time, if the microlens array 4 72 and the aperture array 4 7 6 are not arranged, as shown in FIG. 28 (B), the pixel size of each light beam spot BS projected onto the exposed surface 5 6 is 1 pixel size. (Spot size) corresponds to the exposed area 468 ^. If the size becomes larger, the MTF (optical transfer function) characteristic indicating the sharpness of the exposed area 468 will be reduced. On the one hand, when the microlens array 472 and the aperture array 476 are arranged, the laser light reflected by the DMD50 is collected according to each microlens of the microlens array 472 and corresponding to each pixel of the DMD50. As a result, as shown in FIG. 28 (C), even when the exposure area is enlarged, the spot size of each of the first beam BS can be reduced to a desired size (for example, 10 A ml. // m) to prevent degradation of MTF characteristics to perform high-definition exposure. In addition, the reason why the exposure area 468 is tilted is because the DMD50 is tilted so that there is no gap between the pixels. In addition, even if the light beam according to the aberration of the microlens is wide, the light beam can be shaped to have a fixed size on the exposed surface 56 by using the aperture, and at the same time, the light beam can be set to correspond to each pixel Aperture prevents crosstalk between adjacent pixels. # Furthermore, by using the same high-brightness light source as the above-mentioned embodiment for the lighting device 144, since the beam angle of each microlens incident on the microlens array 472 from the lens 458 is reduced, adjacent pixels can be prevented Part of the light beam is incident. That is, a high extinction ratio can be achieved. As described above, the exposure head and exposure device of the present invention are provided with a spatial light modulation element, and the effect of accelerating the modulation speed of the spatial light modulation element to perform high-speed exposure can be obtained. (Second Embodiment) -58 200405032 The second embodiment is an embodiment in which a light-curable resin is exposed by a light beam modulated by a spatial light modulation element to form a three-dimensional light-forming package g in response to image data. [Light-Shaping Device] As shown in Fig. 32, the light-shaping device according to the embodiment of the present invention includes a container 156 opened at the top, and a liquid-curing resin 150 is stored in the container 156. Further, a flat plate-shaped lifting stage 152 is arranged in the container 156, and the lifting stage 152 is supported by a supporting portion 154 arranged outside the container 156. The support portion 154 is provided with a male spiral portion 154A, and the male spiral portion 1 5 4 A is screwed with a lead screw 1 5 5 which is rotatable by a drive motor (not shown). Along with the rotation of the lead screw 155, the lifting stage 15 2 is lifted. Above the liquid surface of the photo-curable resin 152 contained in the container 156, a box-shaped scanner 1 62 is arranged so that its longitudinal direction is toward the width direction of the container 156. The scanner 162 is supported by two support arms 160 mounted on both sides in the width direction. The scanner 162 is connected to a controller (not shown) for controlling it. Guides 1 5 8 extending in the sub-scanning direction are provided on both sides of the container 156 in the longitudinal direction. The lower ends of the two support arms 160 are attached to the guides 1 5 8 to The auxiliary scanning direction is reciprocally mounted. In addition, the optical shaping device is provided with driving means (not shown) for driving the support arm 160 together with the scanner 162 along the guide portion 158. As shown in FIG. 33, the scanner 162 (for example, 3 rows and 5 columns) is provided with a plurality of (for example, 14) exposure heads 166 arranged in a substantially matrix arrangement. In this example, because of the relationship with the width in the width direction of the container 156, four exposure heads 166 are arranged in the third row. In addition, when each exposure head arranged in the m-th row and the n-th column is shown, it is shown as the exposure head 166mn. 200405032 The exposed area 1 6 8 according to the exposure head 16 6 is a rectangular shape with the short side in the sub-scanning direction. Therefore, with the movement of the scanner 162, a strip-shaped exposed area (cured area) 1 66 of each exposure head 1 66 is formed on the liquid surface of the photocurable resin 152. In addition, when the exposure areas formed by the respective exposure heads arranged in the m-th row and the ^ -th column are to be expressed, they are expressed as the exposure area 168 mn. The configuration, operation, and modification of each of the β exposure heads 166u to 166 mn are the same as those of the first embodiment. However, the wavelength bands of the GaN-based semiconductor lasers LD1 to LD7 are preferably 350 nm to 420 nm. On the point of using a low-cost GaN-based semiconductor laser, the wavelength of 408 nm is particularly good. In the DMD50, a micromirror array with 800 micromirrors arranged in the main scanning direction is implicitly 600 arrays in the sub-scanning direction, but only a part of the micromirror array is driven by the controller (for example, 800 X 100 columns This point is the same as that of the first embodiment. In the light shaping device described above, the image data corresponding to the one-layer exposure pattern is input to a controller (not shown) connected to the DMD50 and temporarily stored in the frame memory in the controller. This image data indicates the density of each pixel constituting the image in binary (the presence or absence of a dot record). The scanner 162 is moved at a constant speed from the upstream side to the downstream side in the sub-scanning direction along the guide portion 158 by a driving device (not shown). When the scanner 1 62 starts to move, the image data stored in the frame memory are sequentially read out, and then the control of each exposure head 1 66 is generated based on the image data read by the data processing section. signal. Then, by using the mirror drive control section, the micromirrors of the DMD 50 of each of the exposure heads 1 66 are controlled to be turned on and off according to the generated control signals. When the laser light is irradiated to the DMD50 by the fiber array light source 66, the laser light system reflected when the micromirror of the DMD50 is on is imaged on the photohardenable resin 150 through the lens system-60-200405032 54, 58 Liquid surface (exposed surface) 56. In this way, the laser light emitted by the optical fiber array light source 66 is turned on and off at each pixel, and the photo-hardening resin 150 is in pixel units (exposure area 168) having a number that is almost the same as the number of pixels used by DMD50. Hardened by exposure. 'Moreover, the scanner 162 is moved at a certain speed, and the liquid level of the photo-curable resin 150 _ is subjected to sub-scanning to form each of the exposure heads 166 in a belt-shaped sintered area 170 ° When the scanner 162 is used once When the sub-scanning is completed for one layer, the scanner 162 is returned to the origin located on the most upstream side along the guide portion 158 by a driving device (not shown). Next, a driving motor is used to rotate the lead screw 155 to lower the lifting stage 152 by a predetermined amount, so that the hardened portion of the photocurable resin 150 sinks below the liquid surface, and the photocurable resin 1 50 is liquid. Fill above the hardened part. Then, the image data of the sub-layer is input to the controller (not shown) connected to the DMD50, and the scan by the scanner 162 is performed again! | In this manner, the exposure (hardening) by sub-scanning and the lowering of the stage are repeatedly performed, and the hardened portions are laminated to form a three-dimensional model. As described above, the optical shaping device according to this embodiment is provided with a DMD. The micromirror array in which 800 micromirrors are arranged in the main scanning direction is arranged in the sub-scanning direction. There are 600 groups, but only a part of it is controlled by the controller. Since the micro-mirror array is controlled like a drive, the modulation speed per line is faster than when all micro-mirror arrays are driven. This allows high-speed exposure and shaping. In addition, the light source system used to illuminate the DMD uses a high-brightness fiber array light source in which the exit ends of the optical fibers of the multiplexed laser light source are arranged in an array, so that a high output and a deep focal depth can be obtained, Optical density output, so high-speed and high-precision shaping can be performed. Furthermore, since the output of each optical fiber light source is increased, the number of optical fiber light sources necessary to obtain a desired output is reduced. Therefore, it is possible to reduce the cost of the optical shaping device. In particular, in this embodiment, since the cladding diameter of the outgoing end of the optical fiber is set to be smaller than the cladding diameter of the incident end, the diameter of the light emitting portion is changed to be small, and the optical fiber array light source can be designed to have higher brightness. As a result, finer shapes can be obtained. [Laser driving method] Each of the GaN-based semiconductor laser systems included in the optical fiber array light source may be continuously driven or pulsed. The exposure system based on pulsed laser light prevents thermal diffusion and enables high-speed and high-definition shaping. The shorter pulse width is better, lpsec ~ 100nsec is better, and lpsec ~ 300psec is better. In addition, GaN-based semiconductor laser systems are less prone to breakage of the light emitting end face called coD (optical damage), have high reliability, and can easily achieve a pulse width of lpsec to 300 psec. [Other exposure methods] Generally, in the light forming method of forming a three-dimensional model, a resin that is high in temperature due to the shrinkage of the resin during the hardening and the superposition of heat generated during the hardening is caused by cooling at room temperature and caused by thermal strain. Hardening shrinkage, accompanied by these hardening shrinkages, has the problem of thermal strain of the formed article and the reduction of the forming accuracy. In particular, when a region including a plurality of pixels is simultaneously exposed (surface-exposed) to form a flat plate shape, the shaped object is warped downward in a convex shape with respect to the lamination direction. In order to prevent the occurrence of such strain due to hardening and shrinkage, it is preferable to divide the exposure area into a plurality of areas and then sequentially expose them. For example, the same liquid surface of the photocurable resin is scanned a plurality of times. In the first scan, the shape-shaped line is exposed and the photocurable resin is cured. Then, in the second and subsequent scans, the line is exposed. The photo-curable resin is hardened inside, so that the occurrence of strain is prevented. -62-200405032 As shown in Fig. 34 (A), the exposure area is divided into a plurality of pixels, and the plurality of pixels are divided into the first pixels composed of pixels 1 〇2 which are not adjacent to each other. Two groups, such as a group and a second group composed of pixels 104 that are not adjacent to each other, may be scanned and exposed for each group. Pixels 102 and 104 are arranged in a black and white pattern. Figure 34 (A) shows a part of the exposure area. However, when an exposure head equipped with a DMD of 1 million pixels is used, the exposure area can be divided into 1 million pixels according to the number of pixels of the DMD. First, in the first scan, as shown in FIG. 34 (B), the pixels 102 belonging to the first group are exposed, and in the second scan, as shown in FIG. 34 (C), the exposure is second. Group of pixels 104. Thereby, the gap between the pixel and the pixel is buried, and the exposed area of the liquid surface of the photocurable resin is fully exposed. The pixels of the first group exposed simultaneously in the first scan are not adjacent to each other, and the pixels of the second group exposed simultaneously in the second scan are not adjacent to each other. Since the adjacent pixels are not exposed at the same time, the strain system that shrinks due to hardening is not transmitted to the adjacent pixels. That is, when the entire exposed area is exposed at the same time, the strain system that shrinks due to hardening becomes larger as the exposed area is propagated. Although considerable strain occurs, in this example, the hardening shrinkage is only in the range of 1 pixel. The strain generated due to the hardening contraction is not transmitted to the adjacent pixels. As a result, the generation of strain in the laminated shape is significantly suppressed, and the shape can be formed with high accuracy. In the exposure apparatus of the embodiment described above, the liquid surface of the photocurable resin can be exposed in an arbitrary pattern by one scan by a scanner. Therefore, it is easier to expose each area divided by multiple scans. [Photocurable Resin] The liquid photocurable resin used in photoforming is generally a polyurethane resin that is hardened by photoradical polymerization reaction of 200405032 or photocationic cation polymerization. Resin-cured epoxy resin. In addition, a sol-gel conversion type photocurable resin which is in a gel state at normal temperature and is converted into a sol state when thermal energy is imparted by laser irradiation can be used. In the photoforming method using a sol-gel conversion type photocurable resin, since the exposure is performed on the molding surface in a gel state rather than a liquid state, the molding system is formed in the gel resin. Therefore, it has the advantage of not requiring a supporting portion or a connecting portion to support the shaped object. In the case of performing line exposure and area exposure for simultaneous exposure to a specified area, it is preferable to use a resin system to which thermal conductivity is added for the above-mentioned sol-gel conversion type photocurable resin. By adding a thermally conductive filler, the thermal diffusivity is exhibited, and the occurrence of thermal strain in the product is prevented. In particular, the sol-gel conversion type photo-curable resin is different from ordinary resins in that it can be uniformly dispersed without settling the filler, so that thermal diffusivity can be maintained. (Third Embodiment) In accordance with the image data, the third embodiment sinters the powder with a light beam modulated by a spatial light modulation element to form a sintered layer. An embodiment of a multi-layer model forming device. [Laminated Molding Apparatus] As shown in FIG. 35, the laminated molding apparatus according to the embodiment of the present invention is provided with a container 156 which is opened at the top. The container 156 is divided into three by two partitions 151 in the lengthwise direction. A shape forming part 153 for forming a shape is arranged at the center part. The two sides of the shape forming part 153 are provided with the shape forming part 153. A supply unit 155 that supplies the powder 150 to the forming unit 153. As for powder 150, engineering plastics, metals, ceramics, sand, 200405032 and wax can be used. For example, powders of acrylic, nylon (Nylon) 1 1 composite, beads nylon 11, synthetic rubber, stainless steel 316, stainless steel 4 2 0, pinstone sand, and silica sand can be used. The stage 152 constituting the bottom surface of the forming portion 153 is supported by the support portion 154, and can be raised and lowered by a driving mechanism (not shown) mounted on the support portion 154. A reversing roller 157 for flattening the surface of the powder 150 in the container 156 is mounted on the inner upper portion of the container 156, and is reciprocally mounted in the sub-scanning direction. When the stage 152 of the forming portion 153 is lowered, the powder 150 is insufficiently supplied to the forming portion 153, so the powder 150 is supplied from the supplying portion 155 by the reverse roller 157. Then, the powder 150 supplied by the rotation of the reverse roller 157 in a direction opposite to the moving direction is pressed and expanded on the forming portion 153, and the surface of the powder 150 is flattened. Above the surface of the powder 150 contained in the container 156, a box-shaped scanner 162 is arranged in its length direction. Towards the width direction of the container 156. The scanner 162 is supported by two support arms 160 mounted on both sides in the width direction. The scanner 1 62 is connected to a controller (not shown) for controlling the scanner. In addition, guide portions 158 extending in the sub-scanning direction are provided on both sides of the container 156 in the longitudinal direction. The lower ends of the two support arms 160 are attached to the guide portions 158 so as to reciprocate in the sub-scanning direction. It is installed mobile. In addition, the laminated shaping device is provided with a driving device (not shown) for driving the support arm 160 along with the scanner 162 along the guide portion 158. As shown in FIG. 36, the scanner 162 (for example, 3 rows and 5 columns) is provided with a plurality of (for example, 14) exposure heads 166 having a slightly matrix arrangement. In this example, four exposure heads 166 are arranged in the third row because of the relationship with the width in the width direction of the container 156. In addition, when each of the exposure heads arranged in the m-th row and the n-th column is shown, it is represented as the exposure head 1 66 mn. 200405032 The exposed area 1 6 8 of the exposure head 1 6 6 is a rectangular shape with the short side in the sub-scanning direction. Therefore, with the movement of the scanner 16 2, the surface of the powder 1 5 2 forms an exposed area (sintered area) 1 70 in the form of a band of each exposure head 1 66. In addition, when the exposure areas of the respective exposure heads arranged in the m-th row and the n-th column are shown, the exposure area is 168mn. The structures, operations, and modifications of the exposure heads 166u to 166 mn are the same as those of the first embodiment. However, for GaN-based semiconductor lasers LD1 to LD7. In the wavelength range of 350nm ~ 450nm, a laser having an oscillation wavelength other than the above 405nm can also be used. Laser light having a wavelength of 350 to 450 nm has a large light absorption rate and is easy to convert the sintering energy. Therefore, it is possible to shape powder at high speed, that is, to sinter the powder. The wavelength range of the laser light is preferably 350 to 420 nm. In terms of using a low-cost GaN-based semiconductor laser, a wavelength of 405 nm is particularly preferable. In DMD50, although there are 600 micromirror columns arranged in the main scanning direction, there are 600 micromirror columns arranged in the sub-scanning direction, but only a part of the micromirror columns are controlled by the controller (for example, 800 X 100 columns). The point of being driven is the same as that of the first embodiment. In the light shaping device described above, the image data corresponding to the exposure pattern of one layer is input to a controller (not shown) connected to the DMD50 and temporarily stored in the frame memory of the controller. This image data is the binary data (the presence or absence of point records) of the density data of the pixels that make up the image. The scanner 162 is driven at a constant speed from the upstream side to the downstream side of the sub-scanning direction along the guide portion 158 by a driving device (not shown). As soon as the movement of the scanner 1 62 is started, the image data stored in the frame memory are sequentially read out, and the image data read in the data processing section is used to generate the image data for each exposure head 1 66. control signal. Then, using the mirror drive control section, according to the control signal produced by 200405032, the micromirrors of DMD50 of each exposure head 166 are controlled to be turned on and off. When the DMD 50 is irradiated with laser light by the fiber array light source 66, the reflected laser light when the micromirror of the DMD 50 is on is imaged on the surface (exposed surface) 56 of the powder 150 according to the lens system 5 4, 5 8 . In this way, the laser light emitted by the optical fiber array light source 66 is turned on and off by each pixel, and the powder 1 50 is exposed and sintered in a pixel unit (exposure area 168) that is approximately the same as the number of pixels used by the DMD50. That is, it melts and hardens. Further, as the scanner 162 is moved at a constant speed, the surface of the powder 150 is subjected to sub-scanning to form a belt-shaped sintered region 170 of each exposure head 166. By one sub-scanning by the scanner 162, when the sintering of one layer is completed, the scanner 162 is returned to its original position on the most upstream side along the guide portion 158 by a driving device (not shown). Next, when the stage 152 of the forming portion 153 is lowered by a predetermined amount by a driving mechanism (not shown), the powder 150 that is insufficient due to the lowering of the stage 152 is supplied by the supply unit 155, and the surface of the powder 150 is reversed. The rollers 1 5 7 are flattened. Then, when the image data of the next layer is input to a controller (not shown) connected to the DMD50, the sub-scanning by the scanner 62 is performed again. In this way, the sintered layer is overlapped by repeatedly performing the exposure (sintering) in the sub-scan and the lowering of the stage to form a three-dimensional model. As described above, the multilayer forming device of this embodiment is provided with a DMD. The micromirror array with 800 micromirrors arranged in the main scanning direction is arranged in 600 groups along the sub-scanning direction. However, only a part is controlled by the controller. As compared with the case where all the micro mirror rows are driven, the modulation speed per line is faster. This makes it possible to perform high-speed exposure and shaping. In addition, the light source used to illuminate the DMD is a high-brightness fiber array light source that uses the 200405032 output end of the optical fiber of the multiplexing laser light source as an array, so it can obtain high output and deep focus depth, and high The optical density output, so high precision shaping can be performed. In addition, since the output of each optical fiber light source is increased, the number of optical fiber light sources necessary to obtain a desired output is reduced, and it is possible to build layers to form a low-cost device. . Especially in this embodiment, since the diameter of the cladding at the exit end of the optical fiber is set to be smaller than the diameter of the cladding at the entrance end, the diameter of the light-emitting portion is reduced, and higher brightness of the optical fiber array light source can be attempted. With this, higher-precision shaping systems are possible. In addition, similar to the second embodiment, it may be exposed by laser light driven by a pulse wave, and the same sintered layer may be divided into a plurality of times for exposure. (Fourth Embodiment) A fourth embodiment is an embodiment in which a microchip for a synthesis reaction in which a minute flow path is formed is produced using the exposure apparatus of the first embodiment. [Microchip for Synthetic Reaction] As shown in Fig. 37, the microchip for synthetic reaction is constructed by weighting a protective substrate 202 on a flat substrate 150 formed of glass or the like. The substrate 150 has a low thickness of usually 0. 5mm ~ 2. About 0mm, the thickness of the protective substrate 202 is usually φ 0. 1mm ~ 2. 0mm degree. In each protective substrate 202, injection ports 204a and 204b for injecting a reagent and a discharge port 206 for discharging a reaction solution obtained after the reagent is reacted are provided therethrough. The substrate 150 is provided with a minute flow path 208 through which a reagent or a reaction solution flows. The minute flow path 208 is arranged so that the reagents injected from the injection inlets 204a and 204b merge at the confluence point 210 and are discharged toward the discharge port 206. The groove width coefficient of the minute flow path is ten to several hundred μm, and 10 μm to 5 0 // m is particularly good. With a small channel width of 1 〇 # m ~ 5 〇 # m, the flow path resistance is relatively small, so a good size effect can be obtained. -68- 200405032 The reagents 204a and 204b of the microchip for reaction are injected with reagents. When the reagents are sucked from the discharge port 206 side, the reagents flow through the microchannel 208 and are mixed at the confluence point 210 to react. Thereby, a desired substance can be synthesized. The obtained reaction solution circulates through the minute flow path 208 and is discharged from the discharge port 206. The analysis of the reaction liquid obtained from this discharge port 206 can be the same as the reaction performed at a fixed ratio, and the reaction product can be identified or quantified. [Manufacturing method of microchip] Next, the manufacturing method of the microchip for the synthesis reaction will be described with reference to Fig. 38. This manufacturing method consists of an exposure process for exposing a photoresist film, a patterning process for removing a portion of the photoresist film for patterning, an etching process for etching a substrate to form a minute flow path, and a substrate with a minute flow path formed thereon and It is constituted by a bonding process in which the protective substrate is bonded. Each project is described below. As shown in FIG. 38 (A), after the photoresist film 212 is formed on the substrate 150 by a spin coating method or the like, as shown in FIG. 38 (B), the photoresist film 212 is exposed according to the pattern of the minute flow path 208. As shown in FIG. 38 (C), the exposed portion 214 is dissolved in the developing solution and removed. Here, by patterning the photoresist film 212 with high positional accuracy, the minute flow path 208 can be formed with high accuracy. The exposure process of the photoresist film 2 12 will be described later. Next, as shown in FIG. 38 (D), a patterned photoresist film 21 2 is used to etch the substrate 150 from the surface to form a minute flow path 208. As shown in FIG. 38 (E), the remaining photoresist is removed. Film 212. The etching of the substrate 150 can be performed by either dry etching or wet etching. However, since it is microfabricated, dry uranium etching such as high-speed atomic wire (FAB) uranium etching is suitable. Next, as shown in FIG. 38 (F), through holes such as injection ports 204a, 204b and discharge ports 206 are formed in the protective substrate 202 by a method such as ultrasonic processing. Then, as shown in Fig. 38 (G), the protective substrate 202 and the surface of the 200405032 in which the microchannels 208 are formed on the protective substrate 202 are opposed to each other, and the two substrates are overlapped and fixed to each other. For example, a UV adhesive can be used for fixing. On the surface of the protective substrate 200 where the minute flow path 208 is formed, a V coating agent is applied by a spin coating method or the like, and the substrate 150 and the protective substrate 202 are closely adhered, and then irradiated with ultraviolet rays. And then. When the substrate 150 and the protective substrate 202 are formed of glass, the surfaces of the two substrates may be dissolved and bonded with hydrofluoric acid. [Exposure of Photoresist Film] Hereinafter, the exposure process of the photoresist film will be described in detail. In this exposure project, the spatial light modulation element is used to modulate the laser light with a wavelength of 350 nm ~ 450 nm, according to the pattern data of the formation of the tiny flow path. The photoresist film 212 is digitally exposed. In order to perform exposure with higher precision, it is better to use laser light with a deep focal depth from a high-brightness light source. The photoresist film 212 can be a dry film resist (DFR) or electrode deposition resist used in a manufacturing process of a printed wiring board (PWB; Printed Wiring Board). These DFR or electrode deposition resistors can be thickened compared with the resistors used in the semiconductor manufacturing process, and can form a film with a thickness of 10 // m φ ~ 4 0 // m. Further, a plurality of layers of a photoresist film can be laminated to achieve a thicker film. At this time, as shown in FIG. 39 (A), a first photoresist film 212a is formed, and after a designated area 214a is exposed, as shown in FIG. 39 (B), a second light is formed on the first photoresist film 212a. The resist film 212b uses the constant ratio function of digital exposure to expose the area 214b corresponding to the designated area 214a. As shown in FIG. 39 (C), when the exposed areas 214a and 214b are removed, a deep groove is formed as an obstruction body. In addition, in this example, the example of using a resistive film as a two-layer laminate is explained, but the resistive-70-200405032 bulk film is used as a three-layer and four-layer laminate, and the ratiometric function using digital exposure will be the same Position exposure can form deeper grooves. In addition, here, the exposure is explained by overlapping two or more layers without passing through the development process, but the first layer is exposed, and then developed, and the substrate after the development or the swelling of the barrier is digitally fixed. As a correction, the second layer can be exposed after development, and the third layer and the fourth layer can also be exposed in the same manner. Accordingly, the positional deviation of the pattern during development can be corrected with high accuracy. In addition, by thickening the photoresist film 212 as described above, deep grooves of the dependent body can be formed, and deep grooves (micro flow paths) with high accuracy can be formed on the substrate 202 by etching. For example, it can be seen from FIGS. 40 (A) and 40 (B) that when FAB etching is used to form a minute flow path with the same groove width, when the photoresist film 2 1 2 is thin, the light substrate 150 can be easily tilted. When the side is etched and the photoresist film 212 is thick, the oblique light system is difficult to enter due to the obstruction, and the substrate 150 system becomes difficult to be etched by the side uranium. Thereby, a deep groove with high accuracy can be formed in the substrate 150. In addition, the pattern of the second layer and the third layer can be digitally corrected using a position, a pattern width, and the like, as easily as dry etching. When a minute flow path with a groove width of 10 // m to 50 // m is formed, the thickness of the photoresist film 2 1 2 is preferably 10 μm to 50 // m, and more preferably 10 / zm to 100 / zni. In addition, in the case where a minute flow path is formed by wet etching using an etching solution, as shown in FIG. 41, the photoresist film 212 can also be formed with a pattern of openings 2 1 6 that are widened in a push-up manner. Since the opening 2 1 6 is pushed out, the etching solution is easily immersed. [Formation of Micro Flow Path] The image data corresponding to the exposure pattern is input to a controller (not shown) connected to the DMD50 and temporarily stored in the frame memory in the controller. This day image data is the data in which the density of each pixel constituting the day image is expressed in binary (the presence or absence of point records). 200405032 The stage 152 to which the substrate 150 forming the photoresist film is adsorbed is moved at a constant speed from the upstream side to the downstream side of the shutter 160 along the guide portion 158 according to a driving device (not shown). When the stage 152 passes under the gate 160, the detection sensor 1 64 installed at the gate 160 detects the front end of the substrate 150-. At this time, the image data stored in the frame memory is sequentially read out with a plurality of lines, and the control signal to each exposure head 1 66 is generated based on the image data read out in the data processing section. Then, using the mirror drive control section, the micromirrors of the DMD 50 of each exposure head 166 are controlled to be turned on and off according to the generated control signals. That is, in the DMD50, a micromirror array with 800 micromirrors arranged in the main scanning direction has 600 groups arranged in the sub-scanning direction, all of which are to be used. · When the DMD50 is irradiated with laser light by the optical fiber array light source 66, the laser light reflected when the micromirror of the DMD50 is on is imaged on the photoresist film formed on the substrate 150 by the lens system 54, 5 8 On the exposure surface 56. In this way, the laser light emitted by the optical fiber array light source 66 is turned on and off at each pixel, and the photoresist film is exposed in a pixel unit (exposure area 168) that is almost the same as the number of pixels used by the DMD50. . In addition, the substrate 150 and the stage 152 are moved at a certain speed, so that the photoresist film formed on the substrate 150 passes through the scanner 162 to perform sub-scanning in a direction φ opposite to the movement direction of the stage. A band-shaped exposed area 170 of each exposure head 166 is formed. When the secondary scanning of the photoresist film of the scanner 1 62 is ended and the rear end of the substrate 150 is detected by the detection sensor 1 64, the stage 152 is returned to the position along the guide 158 according to a driving device (not shown). At the origin on the most upstream side of the gate 160, it again moves at a constant speed along the guide portion 158 from the upstream side to the downstream side of the gate 160. as. As described above, in this embodiment, since a spatial light modulation element such as DMD is used in the exposure process of the photoresist film, the laser light can be applied to each pixel in accordance with the formation of a minute flow path-72-200405032 pattern. Modulation. Laser light that can be modulated exposes the photoresist film at high speed and high definition. In this way, in the exposure process, a photoresist film in an arbitrary pattern can be exposed at high speed and high precision. Through the next patterning process and etching process, a minute flow path in an arbitrary pattern can be formed at high speed and high accuracy. As described above, since exposure in an arbitrary pattern is possible, it is possible to easily form minute flow paths in a complicated pattern. In addition, since high-speed exposure is possible, a minute flow path can be formed on a large-area glass substrate in a short time. Furthermore, since the coefficients are exposed, the masks of the respective patterns are not required, and a minute flow path can be formed at a low cost. In addition, since DFR or electrode deposition resist is used for the photoresist film, compared with the resist used in the semiconductor manufacturing process, the film can be thickened, and a photoresist having a thickness of 1 0 // m to 40 // m can be formed. membrane. In this way, by forming the photoresist film in a thick film, it is possible to form a minute flow path with a deep groove with high accuracy by etching. In addition, a plurality of layers of the photoresist film can be laminated to achieve a thick film. In this case, the constant ratio function of digital exposure can be used to expose the same position of the multiple laminated photoresist films. In this embodiment, the exposure device uses a multiplexing laser light source to form an optical fiber array light source. At the same time, the diameter of the cladding at the exit end of the optical fiber is smaller than the diameter of the cladding at the incident end. It is planned to increase the brightness of the fiber array light source. Thereby, laser light with a deep focal depth can expose the photoresist film more finely. For example, it may be a beam diameter of 1 // m or less and a resolution of 0. Exposure with ultra-high resolution below 1 // m is sufficient to form a fine flow path with a groove width of 10 μχη to 50 // m with high accuracy. . [High-speed driving method] Generally, in the DMD, there are 600 micromirror arrays with 800 micromirrors arranged in the main scanning direction. There are 600 groups of micromirror arrays arranged in the sub-scanning direction, but only a part of the 200405032 micromirror array controlled by the controller (for example, 8 0 0 x 10 columns) can also be driven. The data processing speed of d M D has its limit. Since it is proportional to the number of pixels used and the modulation speed per line is determined, only a part of the micromirror array is used, and the modulation speed per line becomes faster. This reduces the exposure time. On the one hand, in a scanning method in which the exposure head is continuously moved relative to the exposure surface, it is not necessary to use all the pixels in the sub-scanning direction. [Other manufacturing methods of microchips] In the above-mentioned embodiment, although an example is described in which a microchannel is directly formed on a substrate constituting a microchip, a microchannel is formed on a substrate for molding to make a model. It is also possible to manufacture microchips with minute flow paths by using die-forging or glass-molding with this model. [Microchip with microchannels] In the above-mentioned embodiment, the microchip for synthesis reaction is described as an example, but the method for forming a microchannel of the present invention is also applicable to the production of microchips with microchannels. Other types of microchips. Other types of microchips include cancer diagnostic chips, cytochemical chips, environmental measurement chips, chromatography chips, electrophoresis chips, protein chips, and immunoassay chips. Although these wafers form minute flow paths with different patterns according to the function of each wafer φ, according to the method for forming a minute flow path of the present invention, the digital exposure corresponding to the pattern formation of the minute flow paths can form an etching mask, so that Easy to cope with various types of production. Moreover, it is possible to easily form a minute flow path having a plurality of functions. In particular, this method can be patterned over a large area, and through the improvement of yield and yield, it becomes a low-cost method for forming micro-channels. In addition, the method for forming the minute flow path of the present invention is not limited to the minute flow path of a laboratory wafer, and can be widely used as a method for forming a fine groove on a substrate. (Fifth Embodiment) The fifth embodiment is an embodiment of a bleaching processing device using a high-output and high-brightness optical fiber array light source similarly to the exposure device of the first embodiment. [Configuration of bleaching processing apparatus] As shown in Fig. 42, the bleaching processing apparatus according to the embodiment of the present invention includes a plurality of transporting rollers 202 for transporting a long cloth 200 along a designated transport path. Further, the bleaching device includes a chemical liquid tank 206 in which a chemical liquid 204 containing an oxidizing agent or a reducing agent is stored, and a laser irradiation unit 208 is provided on the downstream side of the chemical liquid tank 206 in the transport direction. In this laser irradiation unit 208, as shown in Fig. 43, an irradiation head 500 for irradiating laser light to the cloth 200 pulse wave is arranged above the cloth 200 placed on the conveyance path. As shown in Figs. 44 (A) and 44 (B), the irradiation head 500 is a fiber array light source 506 in which a plurality of (for example, 1000) optical fibers 30 are arranged in a row in a direction orthogonal to the sub-scanning direction. And a cylindrical lens 510 that collects the laser light emitted from the optical fiber array light source 506 only in a direction orthogonal to the alignment direction of the exit end of the optical fiber 30 and forms an image on the surface (scanning surface) 56 of the cloth 200 . In addition, in FIG. 44, the module portion of the optical fiber array light source 506 in which the incident end of the optical fiber 30 is combined is omitted. The cylindrical lens 5 10 has a curvature in a specified direction and has a long shape in a direction orthogonal to the specified direction. The length direction (direction orthogonal to the specified direction) is parallel to the alignment direction of the exit end of the optical fiber 30. Configuration. In addition, it can be used together with the cylindrical lens 5 1 0 to uniformize the illumination optical system or the light quantity distribution correction optical system depending on the compound eye lens system. The light quantity distribution correction optical system has: the alignment direction of the laser emitting end The part close to the optical axis of the lens is an enlarged beam and the part away from the optical axis is a reduced beam. The direction orthogonal to -75- 200405032 and the alignment direction makes the light pass through as it is. The optical fiber array light source 506 is provided with a plurality of laser modules 64, as shown in FIG. 29, and each laser module 64 is combined with one end of the multimode fiber 30. The configuration, operation, and modification of each laser module 64 are the same as those of the first embodiment. In each laser module 64, the combination efficiency of the laser beams B1 ~ B7 to the multimode fiber 30 is 0. 85. When the output of each of the GaN-based semiconductor lasers LD1 to LD7 is 30mW, the respective optical fibers 3 1 series arranged in an array can obtain an output of 180mW (= 30mW x 0. 85x 7). Moreover, in the above-mentioned combined laser light source, the GaN-based semiconductor lasers LD1 to LD7 are each driven by a pulse wave, and a laser light having a specified pulse width can be obtained. The pulse wave is irradiated with laser light to suppress heat generation to prevent damage to the fiber caused by heat (damage to the cloth). The peak-to-peak power of each pulse is preferably 300mW to 3W. When the peak power is 300 m W, the pulse width is 10 nsec (nanosecond) to 1 0 // sec (microsecond), and the pulse wave number per second is 104 to 107. good. The energy rate in this case is about 10%. When the peak chirp power is 3W, the pulse width is preferably from lnsec to 1 // sec, and the pulse wave number per second is preferably from 104 to 107. The energy rate in this case is about 1.0%. In addition, as described above, the GaN-based semiconductor laser system is difficult to cause damage to the light exit end face called COD (optical damage), and it can achieve high reliability and high peak power. [Operation of bleaching treatment apparatus] Hereinafter, the operation of the above-mentioned bleaching treatment apparatus will be described. When the cloth 200 which has been subjected to a scouring process for removing inclusions containing oil components and the like from the fiber and a dyeing process for removing paste is supplied to the above-mentioned bleaching treatment device, the cloth 200 is accompanied by a carrying roller 202 is rotated and transported in the direction of arrow A, and is immersed in the medicine liquid tank 206, which is a medicine 200405032 204. Dipping time is 0. 1 to 1 hour is preferred. The medicinal solution 204 contains an oxidizing agent or a reducing agent at a specified concentration. In terms of oxidants, peroxides such as hydrogen peroxide (H 2 0 2), sodium perborate (NaB03 4H20), potassium permanganate (KMη04), or calcium chloride powder (CaCl CIO), times can be used. Chlorine compounds such as sodium chlorite (NaCIO), sodium hypochlorite (NaC102), etc. As the reducing agent, sodium sulfide (Na2S 2 0 4), sodium borate (NaBH4), and the like can be used. Among these, from the viewpoint of suppressing damage to fibers, sodium borate based on a weak redox effect is particularly preferable. In terms of solvents, water, lower alcohols such as methanol and ethanol can be used. The concentration of the oxidizing agent or reducing agent is preferably 1% to 10%. Moreover, you may add the activation liquid which activates an oxidizing agent and a reducing agent suitably to the chemical | medical solution 204. Next, the cloth 200 taken out from the chemical solution tank 206 is supplied to the laser irradiation unit 208 in a state of being impregnated with the chemical solution 204. In the case of the laser irradiation unit 208, the laser light emitted by the fiber array light source 506 of the irradiation head 5 00 is collected by the cylindrical lens 5 1 0 only in a direction orthogonal to the alignment direction of the exit end of the optical fiber 30 The surface 56 of the cloth 200 is imaged in a line shape. This cylindrical lens 510 functions, for example, as a magnifying optical system that magnifies the beam diameter by a factor of 3 in the short axis direction and 1 in the long axis direction. In addition, the cloth 200 is conveyed at a constant speed, and is sub-scanned in a direction opposite to the conveyance direction by the linear beam 502 from the irradiation head 500. In this way, by irradiating the cloth immersed in the medicinal solution 204 with laser light, the coloring components adhering to the fibers and the oxidizing agent or reducing agent in the medicinal solution 204 are activated, and the reactivity of the two is improved to obtain a good bleaching effect . In order to prevent fiber damage caused by heat and to obtain an activation effect, the wavelength of the laser light to be irradiated is 350 nm to 450 nm, and more preferably 400 nm to 415 nm. On the one hand, when the reactivity of the oxidizing agent or reducing agent is high, and the load on the optical system is small, it is better to use a semiconducting 200405032 body laser with a wavelength of 400 nm or more which can increase the output. Here, the optical density on the surface of the cloth 200 is calculated. When the output of the multiplexing laser light source of the irradiation head is 30 mW for each of the GaN-based semiconductor lasers LD1 to LD7, each of the arrayed optical fibers 30 can obtain a combined output of 180 mW (= 30 mW x 0 · 85χ 7). Laser beam B. Therefore, in the case where 1000 multi-mode optical fibers 30 are arranged in a single fiber array light source, the output of the continuous operation in the laser emitting section 68 is about 180W. The laser emitting portions 68 of the fiber array light source 506 are aligned in a line along the main scanning direction in accordance with the high-luminance light emitting points. The conventional optical fiber light source system that combines the laser light from a single semiconductor laser into one optical fiber has a low output. Therefore, a desired output cannot be obtained without a large number of arrays. However, the multiplexing laser used in this embodiment The light source has a high output, so a small number of columns can obtain a desired output, for example, even one column. In addition, as the multimode optical fiber 30, a cladding diameter = 125 // m, a core diameter of 50 // m, and NA = 0 are used. In the case of the STEP INDEX fiber, the beam diameter of the laser emitting portion 68 is 50 // mx 125mm. When the beam diameter is enlarged by a factor of 3 in the minor axis direction and 1 in the major axis direction, the area of the irradiation area 506 becomes 150 // mx 125 mm. Generally, in a bleaching process using a laser accelerator, a high optical density in the range of 2000 mJ / cm2 to 20000 m; i / cm2 is necessary. In this embodiment, the number of optical fibers to be arrayed and the wavelength of multiplexing are appropriately changed The number of laser beams can easily achieve this range of optical density. When the optical density on the exposed surface required by the bleaching process is set to 10000 m] / cm2, the peak power of the GaN-based semiconductor lasers LD1 to LD7 is 3 W, and the pulse wave width is lOOnec. The pulse wave number per 1 second is 105. When the pulse wave is irradiated on the surface of the cloth 200 under the condition of an energy rate of 1%, the optical density on the exposed surface can be 10mJ / cm2 per pulse and can be i. 4cm / s for 200405032 local speed exposure. On the other hand, when an excimer laser is used instead of a multiplexed laser light source of a GaN-based semiconductor laser, the frequency of repetition becomes lower, so it is necessary to expose the same area at a speed of about 10 times or more. As described above, in the bleaching device in the form of Benbinsch, a fiber array light source that arrays a high-output and high-brightness multiplexing laser light source is used to irradiate laser pulses on cloth pulse waves impregnated with a chemical solution. High energy density can be obtained on the surface of the cloth. Accordingly, at least one of the medicinal solution and the coloring component is activated to promote the bleaching reaction, and a high bleaching effect can be obtained. In addition, since the energy rate of the laser pulse is 1%, heat generation is suppressed and fiber damage can be prevented. The bleaching apparatus of this embodiment uses a multiplexing laser light source composed of a semiconductor laser that can be continuously driven and has excellent output stability in the laser irradiating section, so it is the same as a bleaching apparatus using an excimer laser. In contrast, the system can drive the pulse wave at any frequency and pulse width. By setting the frequency repeatedly, the system can perform bleaching at several times the speed. In addition, compared with a bleaching device using an excimer laser, the energy efficiency is 10% to 20% higher, and maintenance is easy and low cost. In particular, GaN-based semiconductor lasers have a common bonding property, so the damage system of the light exit end face called COD (optical damage) is not easy to occur, and it has high reliability and can achieve high peak power. For example, with a pulse width of 100 nsec and an energy efficiency of 1%, a peak power of 3 W can be achieved. In addition, in this case, the average output is 30 mW. In addition, in the bleaching treatment apparatus of this embodiment, a line beam can be easily obtained by arranging the optical fibers of the optical fiber array light source. Generally, the fiber product is formed in a long shape, so it is reasonable to use a line beam focused on the short-axis direction and extending in the long-axis direction orthogonal to it as the laser irradiation system. In addition, by increasing the number of 200405032 arrayed optical fibers, the line beam length can be extended while maintaining the energy intensity and uniformity. In addition, because it uses laser light with a wavelength of 3 50nm to 450nm, it is not necessary to generate a linear beam using an optical system that uses a special material corresponding to ultraviolet rays, so it is low cost. . [Multi-head type] In the above-mentioned embodiment, an example has been described in which a laser irradiation unit having a single irradiation head is designed. However, when the length of the long axis direction of the line beam is insufficient, multiple irradiation heads may be arranged Long axis direction. [Semiconductor Laser] In the above description, as the semiconductor laser, a G a N-based semiconductor laser with a wavelength of 350 nm to 450 nm that can be expected to be higher in the future will be used as an example. Lasers are not limited to GaN-based semiconductor lasers. For example, a nitride semiconductor laser composed of a group III element (Al, Ga, In) and nitrogen can be used. The gaseous semiconductor system may be AlxGayliii. x. Any composition represented by yN (X + yS_l). A semiconductor laser with an oscillation wavelength of 200 nm to 450 nm can be obtained by appropriately changing the composition. [Other Examples of Magnifying Optical System] As shown in Figures 45 (A) and 45 (B), the above-mentioned irradiation head 500 can be composed of φ as follows: a fiber array light source 506, including a large number (for example, 1000) of optical fibers The emitting end (lighting point) of 30 is a laser emitting section arranged in a row along the direction orthogonal to the sub-scanning direction; the first cylindrical lens 512 enables the laser light emitted by the fiber array light source 506 to be focused only on It is orthogonal to the alignment direction of the exit end of the optical fiber 30. The second cylindrical lens 514 allows the laser light collected in a direction orthogonal to the alignment direction of the exit end of the optical fiber 30 to collect only the alignment light in the alignment direction. The surface (scanning surface) 56 of the cloth 200. The first cylindrical lens 512 has a curvature in a specified direction and has a long shape in a direction orthogonal to the specified 80-200405032 direction, and the length direction (the direction orthogonal to the specified direction) is emitted from the optical fiber 30 The arrangement directions of the ends are arranged in parallel. The second cylindrical lens 5 1 4 has a curvature in a predetermined direction and has a long shape in the specified direction. The curvature direction (designated direction) is arranged parallel to the alignment direction of the exit end of the optical fiber 30. In this irradiation head, the laser light emitted from the optical fiber array light source 5 06 is collected by the first cylindrical lens 512 in a direction orthogonal to the alignment direction of the exit end of the optical fiber 30 and in a second cylindrical shape. The lens 514 collects light in the alignment direction of the exit end of the optical fiber 30 and forms an image on the scanning surface 56 in a line shape. These cylindrical lenses 512 and 514 function as a magnifying optical system that magnifies the beam diameter by 3 times in the short axis direction and 10 times in the long axis direction. In Fig. 42, the cloth 200 is conveyed at a constant speed, and is scanned in a direction opposite to the conveyance direction by a line beam from the irradiation head 500. In this way, by expanding the light beam of the fiber array light source by the optical system, a wide exposure surface can be exposed. In addition, by using an enlarged light beam, a deeper focal depth can be obtained, and the cloth conveyed at a high speed can be uniformly illuminated. Here, the optical density on the exposed surface is calculated. . In the case where the multiplexed laser light source of the irradiation head uses a multimode laser with a peak chirp power of 6W, a 7-LD system can be used to obtain a multiplexed laser beam B with a peak chirp power of 36 W. Therefore, when 1,000 multimode optical fibers 30 are arranged in a fiber array array light source, the peak power of the laser emitting portion 68 is about 36 kW. When the multimode optical fiber 30 is a STEP INDEX type optical fiber having a cladding diameter = 125 // m, a core diameter = 50 // m, and NA = 0.2, the beam diameter of the laser emitting portion 68 is used. Department 50 // mx 125mm. When the beam diameter is enlarged by 3 times in the short axis direction and 10 times in the long axis direction, the area of the irradiation area 506 is 150 // mx 1250 mm. Therefore, under the conditions of a peak power of 6 W, a pulse width of 200405032 100 nsec, an energy rate of 1%, and a pulse wave number of i05 per second, when the pulse wave is irradiated on the surface of the cloth 200, the light on the exposed surface The density is 2 mJ / cm2 per pulse. Even if it is estimated that the loss according to the optical system is about 80%, the optical density on the exposure surface is 1 per pulse. 5mJ / cm2. Therefore, with a light density of 10000mJ / cm2, the width can be 1. 25m cloth with 0. 2cm / s for high-speed exposure. [Modified Example of Optical Fiber] In the above-mentioned embodiment, an example in which a uniform optical fiber with a cladding diameter of 125 // m is used for a multiplex laser light source is described as an example. However, similarly to the first embodiment, the optical fiber The cladding diameter at the exit end is set to be smaller than the cladding diameter at the entrance end. It is suggested that by setting the diameter of the cladding at the exit end of the optical fiber to be small and the diameter of the light-emitting part to be small, it is possible to achieve high brightness of the optical fiber array light source. [Modified Example of Multiple Wave Laser Source] Multiple wave laser light sources using a laser array with a multi-segment structure as shown in Figures 24 (A) and 24 (B) are arranged and collimated in multiple stages using a multi-cavity laser. The array of lenses is particularly suitable for high output. By using this multiplexed laser light source, it is possible to construct a fiber array light source or a beam fiber light source with higher brightness. Therefore, the fiber light source system is particularly suitable as the laser light source constituting the irradiation head of this embodiment. φ Calculate the optical density on the exposure surface in this case. For the multiplexed laser light source of the irradiation head, by using a multi-horizontal mode wafer, when the peak chirp power of each luminous point is set to 6W, a multiplexed laser with a peak chirp power of 103W can be obtained according to 20 LD systems.射 光束。 Beam. Therefore, in the case where Π 50 multi-mode optical fibers are arranged in a single-line optical fiber array light source, the peak power at the laser emitting portion is 1 80 kW. When the same is used as a multimode fiber, the beam diameter of the laser emitting portion is 50 μmx 220mm. When the beam diameter is enlarged by 3 times in the short axis direction and 10 times in the long axis direction, the area of the irradiation area is 1 50-82-200405032 // m 2200mm. Therefore, under the conditions of a peak power of 6W, a pulse width of 100 nsec, an energy rate of 1%, and a pulse wave number of 1 05 per second, when the pulse wave is irradiated to the surface of the cloth, the optical density on the exposed surface 1 pulse wave 10m] / cm2. Even though the loss due to the optical system is estimated to be about 80%, the optical density on the exposure surface is 8 mJ / cm2 per pulse. Therefore, when exposed at an optical density of 10000mJ / cm2, the width can be changed to 2. 2m cloth with 1. 2cm / s high-speed exposure. [Brief Description of the Drawings] FIG. 1 is a perspective view showing the appearance of the exposure apparatus in the first embodiment. Fig. 2 is a perspective view showing the structure of a scanner in the exposure apparatus of the first embodiment. FIG. 3A is a plan view showing an exposed area formed on a photosensitive material, and FIG. 3B is a plan view showing an exposure area of each exposure head. Fig. 4 is a perspective view showing a schematic configuration of an exposure head in the exposure apparatus of the first embodiment. Fig. 5A is a cross-sectional view taken along the sub-scanning direction along the optical axis of the structure of the exposure head shown in Fig. 4, and Fig. 5B is a side view showing the structure of the exposure head shown in Fig. 4. Fig. 6 is an enlarged view showing a part of the structure of a digital micromirror device (DMD). 7A and 7B are explanatory diagrams for explaining the operation of the DMD. Fig. 8A is a plan view showing the arrangement of the exposure beam and the scanning line when the DMD is not inclined, and Fig. 8B is a plan view showing the arrangement of the exposure beam and the scan line when the DMD is inclined. Figure 9A is a perspective view showing the structure of a fiber array light source, Figure 9B is a partially enlarged view of the fiber array light source shown in Figure 9A, and Figure 9C is a plan view showing the arrangement of light emitting points in the laser emitting section FIG. 9D is a plan view showing another arrangement of light emitting points in the laser emitting portion. 200405032 Figure 10 shows the structure of a multimode fiber. Fig. 11 is a plan view showing a configuration of a multiplexing laser light source. Figure 12 is a plan view showing the structure of a laser module. Fig. 13 is a side view showing the structure of the laser module shown in Fig. 12; Fig. 14 is a partial side view showing the structure of the laser module shown in Fig. 12; Fig. 15A is a sectional view showing the optical axis along the focal depth in the conventional exposure apparatus, and Fig. 15B is a sectional view showing the optical axis along the focal depth in the exposure apparatus of the first embodiment. Fig. 16A is a diagram showing an example of a use area of DMD, and Fig. 16B is a diagram showing another example of a use area of DMD. Fig. 17A is a side view of a suitable area for use of the DMD, and Fig. 173B is a sectional view in the sub-scanning direction along the optical axis of Fig. 17A. Fig. 18 is a plan view for explaining an exposure method for exposing a photosensitive material by one scan of a scanner. 19A and 19B are plan views for explaining an exposure method for exposing a photosensitive material by a plurality of scans of a scanner. Fig. 20 is a perspective view showing the structure of a laser array. Fig. 21A is an oblique view showing the structure of a multi-cavity laser, and Fig. 21B is an oblique view of a multi-cavity laser array in which the multi-cavity laser shown in Fig. 21 A is arrayed. Fig. 22 is a plan view showing another configuration of the multiplexed laser light source. Fig. 23 is a plan view showing another configuration of the multiplexed laser light source. Fig. 24A is a plan view showing other components of the multiplexed laser light source, and Fig. 24B is a sectional view along the optical axis of Fig. 24A. Figures 25A, B, and C are illustrations of the correction by the light amount distribution correction optical system 200405032. Fig. 26 is a graph showing the light amount distribution when the light source is Gaussian and the light amount distribution correction is not performed. Figure 27 is a graph showing the distribution and distribution of light quantity after the optical system has corrected the light quantity distribution. Figure 28A is a cross-sectional view along the optical axis of the structure of another different exposure head combined with the optical system, and Figure 28B is a light image projected onto the exposed surface when a microlens array is not used. Floor plan. Fig. 28C is a plan view showing a light image projected onto an exposed surface when a microlens array or the like is used. β FIG. 19 is a perspective view showing another configuration of the optical fiber array light source. Fig. 30 is a perspective view showing the structure of a multilayer forming device of the conventional laser scanning method. Fig. 31 is a perspective view showing the structure of a multilayer forming apparatus using a conventional movable mirror method. Fig. 32 is a perspective view showing the appearance of a light shaping device according to a second embodiment. Fig. 33 is a perspective view showing the structure of a scanner of the light shaping device according to the second embodiment. φ Figure 34A is a plan view showing an example of an exposure pattern of an exposed area, and Figure 34B is a perspective view showing a state after the pixels of the first group of Figure 34A are exposed, and Figure 34C is a view showing Figure 34A A perspective view of the second group of pixels after exposure. Fig. 35 is a perspective view showing the appearance of a multilayer forming apparatus according to a third embodiment. Fig. 36 is a perspective view showing the structure of a scanner of the multilayer forming apparatus according to the third embodiment. -85- 200405032 Figure 37 is a perspective view showing the structure of a microchip for a synthesis reaction. Figures 38A to 38G are cross-sectional views showing the sequence of the manufacturing process of the microchip for synthesis reaction shown in Figure 37. 39A to 39C are cross-sectional views showing examples of thickening of the barrier film. * Figures 40A and 40B are used to illustrate the uranium accompanying the thick film of the barrier film. An illustration that the engraving accuracy will improve. FIG. 41 is a sectional view showing a push-up patterned resist film. Fig. 42 is a schematic configuration diagram of a bleaching apparatus according to a fifth embodiment. Fig. 43 is a perspective view showing the structure of a laser irradiation section of a bleaching apparatus. Fig. 44A is a sectional view in the direction of arranging the optical fibers along the optical axis of the structure of the irradiation head, and Fig. 44B is a sectional view in the sub-scanning direction of the structure of the irradiation head. Fig. 45A is a sectional view in the direction of arranging the optical fibers along the optical axis of the other structure of the irradiation head, and Fig. 45B is a sectional view in the sub-scanning direction showing the structure of the irradiation head. [Symbol description] 1 · · · Light source φ 2, 4, 6 · · • Lens system
3· · · DMD 5 · · •掃描面 10 · · ·熱塊 11〜17· ··准直透鏡 20 · · ·集光透鏡 3 0 · · ·多模光纖 31 · · ·光纖 一 8 6 - 200405032 3〇a、3 1 a · ·.核心 4 0 · · ·封裝 41 · · ·封裝蓋 42 · · ·基板 · 44 ···准直透鏡保持器 _ 46 · · ·光纖保持器 47 · · ·配線 LD1〜LD7· · · GaN系半導體雷射 50 · · •數位微鏡裝置（DMD ) 51 · · ·入射面 籲 52 · · ·出射面 5 3 — ·曝光束 54、58、67 · · •透鏡系 56 ···掃描面（被曝光面） 60 ··· SRAM胞（記憶體胞） 62 · · ·微鏡 63 · · ·保護板 64 · · ·雷射模組 · 6 5 · · ·支持板 66 ···(高亮度）光纖陣列光源 69 · ••鏡 7 1、7 3 · ••組合透鏡 75 · · ·集光透鏡 102、104 · · ·畫素 1 1 0 · · ·多腔雷射 110a ···發光點 一 8 7 - 200405032 111· · •熱塊 113· · •杆式透境 114· · •透鏡陣列 120 · · •集光透鏡 130 · · •多模光纖 184 · · •准直透鏡陣列 130a · · •核心 140 · · •雷射陣列 144 · · •照明裝置 150 · · •感光材料 152 · · •載物台 154 · · •腳部 156 · · •設置台 158 · · •導引部 160 · · •閘門 162 · · •掃描器 16 4· · •檢測感測器 16 6· · •曝光頭 16 8· · •曝光區域 170 · · •已曝光區域 100 · · •熱塊 151 · · •隔板 153 · · •造形部 154A · • •公螺旋部 155 · · •導螺桿 200405032 180 > 182 · ·.熱塊 200 · •.布 2 02 · · ·搬運滾筒 2 04 . · ·藥液 „ 204a、204b ·.·注入口 206 · · ·藥液槽 208 · · ·微小流路 2 1 0 · · ·合流點 212 · · ·光阻膜 212a ···第1光阻膜 _ 212b ···第2光阻膜 2 1 4 · · ·曝光部分 214a · · ·指定區域 214b · · ·區域 2 1 6 · · •開口 2 5 0 · · ·雷射光源 252 · · ·遮板 254 · . ·光纖 參 25 6 · · · XY繪圖器 25 8 · · · XY定位機構 25 8a ··· X定位機構 25 8b · · · Y定位機構 260 · · ·容器 262 ···光硬化性樹脂 2 6 6 · · ·液面 270 · · ·雷射光 - 8 9 - 200405032 272 · • · X軸旋轉鏡 274 · • · Y軸旋轉鏡 454、 45 8 · · ·透鏡系 4 6 8 · • •曝光區域 472 · • •微透鏡陣列 474 · • •微透鏡 476 · • •光圈陣列 478 · •.光圈 480、 482 · · ·透鏡系 500 · • •照射頭 506 · • •光纖陣列光源 510 · ••圓柱狀透鏡 502 · • •線光束 512 · • •第1圓柱狀透鏡 514 · • •第2圓柱狀透鏡3 ··· DMD 5 · · · Scanning surface 10 · · · Thermal block 11 to 17 · · Collimating lens 20 · · · Condensing lens 3 0 · · · Multimode fiber 31 · · · Fiber 8 8- 200405032 3〇a, 3 1 a · ·. Core 4 0 · · · package 41 · · · package cover 42 · · · base plate 44 · · · collimating lens holder _ 46 · · · fiber holder 47 · · · Wiring LD1 to LD7 · · · GaN-based semiconductor laser 50 · · · Digital micromirror device (DMD) 51 · · · Incident surface 52 · · · Exit surface 5 3 — · Exposure beam 54, 58, 67 · · • Lens system 56 ··· Scanning surface (exposed surface) 60 ··· SRAM cell (memory cell) 62 · · · Micromirror 63 · · · Protective plate 64 · · · Laser module · 6 5 · · · Support board 66 ··· (High-brightness) fiber array light source 69 · •• Mirror 7 1, 7 3 · •• Combination lens 75 · · · Condensing lens 102, 104 · · · Pixel 1 1 0 · · · Multi-cavity laser 110a ··· Luminous point one 8 7-200405032 111 ··· Heat block 113 ·· • Pole transparent 114 ··· Lens array 120 ·· • Collecting lens 130 ·· • Multimode light 184 • • • Collimating lens array 130a • • • Core 140 • • • Laser array 144 • • • Lighting 150 • • • Photosensitive material 152 • • • Stage 154 • • • Foot 156 • • • Setting Stage 158 · · · Guide 160 · · · Gate 162 · · · Scanner 16 4 · · · Detection Sensor 16 6 · · · Exposure Head 16 8 · · • Exposure Area 170 · · • Exposed Area 100 • • • Thermal block 151 • • • Partition 153 • • • Shaped portion 154A • • • Male screw portion 155 • • • Lead screw 200405032 180 > 182 • • Thermal block 200 • • Cloth 2 02 • • • Conveying roller 2 04 ··· Chemical solution 204a, 204b ··· Injection port 206 · 1st photoresist film _ 212b · · 2nd photoresist film 2 1 4 · · · exposure section 214a · · · designated area 214b · · · area 2 1 6 · · · opening 2 5 0 · · · laser Light source 252 · · · Shield 254 · · · Optical fiber reference 25 6 · · · XY plotter 25 8 · · · XY positioning mechanism 25 8 a ··· X positioning mechanism 25 8b · · · Y positioning mechanism 260 · · · Container 262 · · Light-curing resin 2 6 6 · · · Liquid level 270 · · · Laser light-8 9-200405032 272 · • · X-axis rotating mirror 274 · · · Y-axis rotating mirror 454, 45 8 · · · Lens system 4 6 8 · • • Exposure area 472 · • • Micro lens array 474 · • • Micro lens 476 · • • Aperture array 478 ··. Iris 480, 482 · · · Lens system 500 · · · Irradiation head 506 · • • Fiber array light source 510 · • • Cylindrical lens 502 · • • Line beam 512 · • • 1st cylindrical lens 514 · • • 2nd cylindrical lens