TWI263710B - Single crystal semiconductor manufacturing method - Google Patents

Abstract

A single crystal semiconductor manufacturing method by which dislocation induction due to a sharp increase of the crystal diameter after the seed crystal is brought into contact with the melt is prevented by suppressing the variation in the temperature of the melt when a single crystal is pulled up with no dislocation without performing a necking process while using an impurity-added seed crystal, and the crystal is prevented from being thinned below a crystal diameter durable against the load. By keeping a magnetic field applied to the melt before the seed crystal is brought into contact with the melt, the variation in the temperature of the melt is suppressed when the single crystal starts to be pulled up, thereby preventing the crystal diameter from sharply increasing or decreasing.

Description

1263710 IX. Description of the Invention: [Technical Field to Be Invented by the Invention] The present invention is a single crystal semi-conducting gas such as Δ, 矽, and 矽 使用 using CZ (C zochra 1 ski ). , dry conductor 蚪, a method for manufacturing a single-crystal semiconductor of large-mouth I without error. 2. Large [Prior Art] One of the methods for manufacturing single crystal Shi Xi is the CZ method. The CZ method is used to grow a single surname 早 early, σ 日日矽%, an unavoidable problem—the seed...the crystal is misaligned when it comes into contact with the melt.” In other words, when the sputum is said to be in contact with the refining liquid, the heat stress caused by i is induced in the seed crystal. Mouth

In order to permeate the misplaced g L " into the crystal, it is necessary to make the crystal diameter ~4_, even if it shrinks bfJ 3 W # 8 ® to form a crystal ~4_= constricted neck 21, so that the misalignment penetrates into the crystal external. q However, in recent years, there are large diameters of 3 〇〇mffl or more, and it is required to smoothly pull large calibers. » In the early V, the mouth is day and night, when the neck is treated by the neck, the neck is narrowed. When the diameter of the part is reduced to 4 _ for one person, the diameter of the object to be removed will be too thin, and it is impossible to avoid the single-piece, large-caliber, large-weight, and slab-shaped cast blocks falling. (Prior Art 1) Patent Document 1 which will be described later describes that the right _ seed crystal having a high concentration of impurities is added, so that the early crystallization of the large diameter and large weight w is not required to be necked, but not The state of the misplaced state of the invention. 7〇54-6737-PF; Ahddub 5 1263710 [Patent Document [Explanation] [The invention is intended to solve the problem of being taken into a single junction, which is an industry-flowing technique, and has a method of applying a magnetic field to a long liquid. However, in the vicinity of the crystal center, it is presumed that the temperature fluctuation is suppressed, the fluctuation is small, and it is difficult to move the solid vertically to the solid solution. In addition, the use of 矽 ingots is also used, which means that it will increase in recent years. However, when the temperature in the squirting liquid is transferred to the shoulder process, the problem of the enthalpy in the melt is well known. The technique of suppressing the generation of the inside of the quartz crucible is a technique of applying a magnetic field pulling method. This is caused by the suppression of convection in the melt to achieve crystal stabilization. When a strong magnetic field is applied during the necking process, the misalignment moves to the point where the misalignment cannot penetrate to the side. That is, by suppressing the convection effect by the magnetic field, the shape of the liquid interface of the crystal powder, the crystal diameter in the necking, and the pulling speed will become stable and convex, and the misalignment will interface 'so, move to the crystallization center and no Dislocation _ Di 丨 丨 贯 贯 贯 贯 贯 贯 贯 贯 贯 贯 贯 贯 贯 缩 缩 缩 缩 缩 缩 缩 缩 缩 高 高 高 高 高 高With Ik, the heavy weight of the traction crystal, the amount of melt (in the case of *days (especially when the amount of melt is more than 150kg) will become larger, since #± seeds,,,,,,,,,,,,,,,,, ^The temperature changes, the gentleman 曰古切,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The change 'crystal diameter will be reduced to support the person (3)

Arr, y Ding, 卞, ,, 口日古古, and load) to T. Therefore, there is a problem that the process of bringing the seed crystals into contact with the start of the melt process is re-implemented. The present invention has been made in view of the above problems, and provides an introduction misalignment caused by an increase in seed crystal crystallization by suppressing temperature fluctuation of a liquid when a single crystal is pulled in a state where no impurity is added in a state of no misalignment. Avoid crystal straightening:: A method of manufacturing a single crystal semiconductor that is resistant to or less than the following. [Means for Solving the Problem] The present invention! The invention relates to a method for producing a single crystal semiconductor, wherein a seed crystal which is added with impurities is in contact with a molten metal in a crucible, and a single crystal semiconductor is produced by crystallization of a drag, characterized in that: a process of applying magnetic: in a solution; The step of contacting the liquid with the seed crystal; and the step of contacting the seed crystal with the smelting liquid and the conductor. The second invention of the single crystal, which is described in the item i of the patent scope, is described in the item i of the patent range i, and the method of the invention is: The liquid is applied to the melt before it is contacted with the crystal. The invention according to the third aspect of the invention is the method of manufacturing a semiconductor according to the invention, characterized in that the magnetic field strength is 15 Å. Above Goss. The fourth splashing date a & '+ of the present invention is a single method of 7054-6737-PF as described in claim 1 of the patent application; Ahddub 7 1263710 is a method of producing a crystalline semiconductor, and the method of producing impurities as impurities is characterized in that : Addition to seed crystallization and the present invention: ... is 1 to ... - above. The method of producing a crystalline semiconductor and the invention of the invention are as follows: the minimum method of coating the liquid after the single liquid described in the first paragraph of the patent application is characterized in that the seed crystal is in contact with the dahdron diameter system or more. In the present invention, by applying a magnetic field to the molten metal before the contact with the molten crystal, the temperature of the bright liquid is prevented from occurring, and the temperature fluctuation of the bright liquid is suppressed, and the core, the speed is increased, or the crystal diameter is reduced. The self-added magnetic field temperature fluctuation is suppressed: at the beginning, after the convection is suppressed and the solution in the solution is obtained, about 4 minutes = stop, there will be a time delay. The above effect can be obtained by applying a magnetic field to the seed agency $ ’. Therefore, the most molten liquid, so that the upper, "times" is applied first, the magnetic field can be applied first to obtain the above effect. Less than the time when the melt is contacted: the field is continuously applied after the seed crystal contacts the liquid, and at least until the rotation: to the shoulder process, the magnetic field is continuously applied. However, when using the present invention, the change in the inside of the dazzling liquid, the heat of the sore, and the change in the degree of the dish in the l-day pulling machine are suppressed, and the seed cockroaches are exposed to the glare liquid until they are transferred to the parallel process.为止子- y ι < between, can avoid the phenomenon of misplacement caused by a sharp increase in crystal diameter. Further, it is possible to avoid the diameter of the crystal which is smaller than the crystal diameter due to temperature fluctuation. I", to support the support by the present invention, there is no need to shrink the neck process, so after touching the solution, the diameter is gradually increased and the process is shifted to the parallel process, and the seed knot can be pulled and crystallized as shown in Fig. 9. That is, after contact with the melt, 8 7054-6737-PF; Ahddub 1263710; 疋 straight k, and then; 5 also knot the daily growth of 2 2 (for example, length of about 50 mm) traction, confirm the melt After the temperature is appropriate, transfer to the parallel process. The concentration of boron B, which must be added to the seed crystal, is preferably above 8 8 〇ms/cc. The reason is that after the traction, the light is used to crystallize and contact the mussel seed. When the interface portion of the crystal is newly formed after the melt, when the boron b to the seed crystal is added to the seed crystal, the dislocation introduction is not found. [Embodiment] Hereinafter, the apparatus of the embodiment will be described with reference to the drawings. A schematic diagram of a single crystal pulling device according to an embodiment of the present invention. As shown in Fig. 1, the single crystal pulling device i of the embodiment is provided with a cz furnace (cavity) 2 as a single crystal pulling container. The single crystal traction device is suitable for the manufacture of large-diameter (for example, 300 mm), large-grain, early crystallized pieces. In the CZ furnace 2, a quartz crucible is provided which contains a molten metal obtained by melting polycrystalline germanium raw materials. And 'to draw the diameter of 3 〇〇 _ single knot 曰曰 e 夕 30 〇 △ 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千The outer side of the material 3 is provided with a cylindrical main heater 9 for heating the polycrystalline hair material in the quartz material 3. The bottom of the quartz _ 3 is provided with an auxiliary heating quartz bottom surface to prevent the bottom of the quartz crucible 3 from solidifying. The annular bottom heater 19. The output of the main heater 9 and the bottom heater 19 (power ^ system independent control 7 〇 54-6737-PF; Ahddub 9 1263710 bottom independent δ circumference for the heating of the melt 5 For example, the main output of the main heater 9 and the σ戸力U South L *5^ in the household _ σ are controlled so that the temperature of the detected melt 5 is detected as the feedback 'make the melt 5 The temperature reaches the target temperature. Moreover, in the embodiment, the main heater 9 and the bottom are added: The heating portion 5 is heated, but the heating mechanism is not limited to being applied, and other heating mechanisms may be employed. For example, electromagnetic heating or laser irradiation heating may be employed. Between the main heater 9 and the inner wall of the CZ furnace 2, There is a heat preservation tube 13. The introduction station: the quartz hanging stalking side is provided with a bowing I mechanism 4. The traction mechanism 4 is made up of the traction vehicle 4a and the seed end system of the front end of the traction shaft 4a 蕤i 2 卞...Sunday head 4c. Seed crystallization 14 ', fine is controlled by the seed crystal chuck k. I# ^ ^ ^ ; The traction shaft 4a is, for example, a shaft body or a rope, which is pulled by a shaft body or hoisted by a rope. When the temperature of the quartz crystal wall is stabilized, the traction mechanism 4 operates: f is melted. When the melt 5, the stone slab is pulled out from the solution 5. :: Early crystallized hair (single crystal is pulled by the front end seed crystal chuck 4c of the traction shaft 4a: the shaft 4a is lowered) into the melt 5. The seed crystal 14 is immersed in the sub-crystal 14 and will be immersed and raised. Corresponding to the seed crystal collet 4C Loss of holdings, the traction shaft 4a will be seed crystals 1 4 early, and the mouth will grow day by day. When pulling, the quartz 坩埚, liter, ω 1 rotation speed rotation. The rotation axis 4a is rotated in the same direction or opposite direction to the rotation axis 10, and the rotation axis 4a is driven in the vertical direction. The rotation axis 10 can be driven in the vertical direction. The movement is to any position. 3 Move up and down by cutting off the inside of the CZ furnace 2 and the outside of the atmosphere. The connection between the atmosphere and the cz furnace 2 is 7054-6737-PF; Ahddub 1263710 maintains the vacuum state (for example, '7 „ Γ7, 'r or so). , supply inertness: 7 to CZ furnace 2, furnace 2 to pump self-exhaust: body -

The furnace 2 is depressurized to a predetermined pressure. 〃 此 ,, CZ species "; single, . 30 traction process (1 batch), prepared in the CZ furnace 2 + :: hair substance. This 'supply argon 7 to CZM2, so: two species -, argon 7 at the same time discharge cz holding ... and the material in each process and set the supply flow rate respectively with the single crystal dream (four), refining 5 will reduce the reduction of 'Hyun 5 and quartz hanging to 5 The oxygen-soluble Wjt of the ... will change, and the oxygen will be produced from the quartz in the evening. This change will affect the single crystal that is being pulled... ΤΙ. Here, in order to prevent the above phenomenon, it is also possible to Or a single crystal stone material is used in the quartz hangma 3 which will be gradually added to the glaze liquid 5. In the sputum, it is additionally supplied to the top of the quartz crucible 3, and is a cone-shaped heat shield 8 at w (gas tempering) 11 surrounding 'with a slightly rounded support. Concealer 8 4 machine 3. The heat shield 8 is insulated by the barrel 13 patrol", and the argon 7 is supplied to the body gas from above. 5 ί & ° inside the crucible 2 as a rice guide to the molten metal surface 5a. The molten metal surface 5a is guided to the molten metal table, and the vapor is evaporated by the self-melting liquid 5 3 peripheral part. And 'argon 7' out. Therefore, the gas on the liquid surface can be drained from the exhaust port in the lower part of the furnace 2. The gas flow is read and stabilized, and the evaporated oxygen is kept in a stable state. 'V' can also make the self-fluxing 5: heat shield 8, which makes the seed crystal " and = is affected by the heat of rotation generated by W3, solution + plus = south temperature. The hot plate 8 can prevent the impurities generated in the furnace 7054-6737-PF/Ahddub 1263710 (for example, the beginning of oxidized nipples) from adhering to the single crystal 矽, and hinder the cultivation of the single crystal 矽 。. The gap G between the lower end and the surface of the melt can be adjusted by raising and lowering the surface 5a I of the surface 4a "lowering the shaft 1 〇 and changing the upper and lower positions of the quartz. Alternatively, the gap G can be adjusted by # ^ ^ 坩埚3. By moving the lifting device up and down around the outside of the CZ furnace, it is known that the magnetic field (transverse magnetic field) is added to the magnet 20 of the molten metal 5 in the quartz accident 3. The second picture shows that the seed crystal is in contact with the bright liquid 5 When the seed crystals ^ the temperature difference ΔΤΓ〇 between the front end surface and the melt 5 (contact surface), and the seed crystal 14 The highest analytical shear stress MRSS (Mpa). The so-called seed = the highest analytical shear stress MRSS (Mpa) in the crystal 14 is the highest thermal stress applied to the seed crystal 14 when it contacts the melt 5, Indicates the index of misplacement into the seed crystal 14 due to thermal shock. Figure 2 shows the temperature difference calculated by heat transfer analysis (FEMAG) and the highest analytical shear calculated by heat transfer analysis (FEMAG). The breaking stress MRSS. As shown in Fig. 2, when the temperature difference Δ τ is smaller, the southmost analytical male fracture stress MRSS in the seed crystal 14 is smaller, and the misalignment due to thermal shock is less likely to be introduced into the seed crystal 14 . In addition, in the prior invention of the present inventors (Japanese Patent Application No. 2002-204 1 78), the concentration of impurities (e.g., rotten sputum) added to the seed crystal 14 is shown, the size of the seed crystal 14 (diameter D), and the criticality. Analyze the relationship between the shear stress (CRSS; Mpa) and the allowable temperature difference Δ Tc . That is, the seed crystal size 14 (diameter D) (mm) is the horizontal axis, and the temperature of the front end of the seed crystal 14 4 when contacting the melt is 7054-6737-PF between the temperature of the melt 5 (contact surface); Ahddub 12 1263710 The temperature difference Δ is c is the vertical axis, and the correspondence between the diameter J) and the allowable temperature difference A is expressed by the characteristics l1, L2, L3. As shown by the characteristics U, L2, U, the relationship between the seed crystal diameter D and the allowable temperature difference ΔTc is approximately inversely proportional. That is, as the seed crystal diameter D becomes larger, the thermal shock stress applied to the seed ... as 1 4 when the molten metal is contacted becomes larger, and accordingly, it is necessary to reduce the tolerance Δ T c . Here, the so-called allowable temperature difference Δ T c is such that the misalignment is not introduced into the upper limit temperature difference of the seed crystal 14 . The characteristics L1, L2, and L3 represent the difference in the size of the $boundary shear stress (CRSS; Mpa) which is one of the mechanical strength indexes of the seed crystal. The so-called critical analysis of male fracture stress (CRSS) is that when the stress is exceeded, the misalignment introduces the η boundary stress of the seed crystal 14 . In the figure, the characteristic L1 system critical analysis shear stress) is the most j (5 MPa), the characteristic L2 system critical analytical shear stress (CKSS) is the characteristic L1 size (1 〇μ pa), and the characteristic [3 chooses the broken station 4 & The B-line B-line analysis of the male squash stress (CRSS) is the smallest (15 MPa). The critical analysis shear stress (CRSS) is changed by the impurity type and concentration C. The default is boron B. Since it is added to the seed crystal 1 4 in the present embodiment, the impurity type is added to the seed crystal, and the core analysis is higher, and the critical analysis shear stress (CRSS) is also increased. Adding the impurity concentration of j ^ 卞 , , , σ crystal 14 C corresponds to Cl, C2, C3 gradually becomes higher, the characteristic, 0 ^ , f 勹 , , ,, 七 。. Further, in Fig. 3, although the impurity concentration c is represented by three kinds of central punches, it is also changed by more stages or continuity of the corresponding impurity concentration C or continuity. And the characteristics have more stages 7054-6737-PF; Ahddub 13 1263710 so 'when the seed crystal Η diameter D is for example D' negative concentration c is C1, C2, C3, special $ should be mixed, w痄兰Λ π 爻Feng l], L2, L3, so, the tolerance σ / inside the difference ATc will become larger. Also, when allowed, w, the corresponding seed surname 曰i 4 mu / mac 糸 such as Δ Tc 〇 uuu I, di, d2, d3, the characteristics will change to, L3, so the impurity concentration C is C1, C2 (2). Although the case where the impurity type is the shed B has been described, it is possible to obtain the same relationship by adding various impurities such as ::Ge or indium In to the seed crystal. Therefore, a predetermined concentration C is added to the seed crystal 14, and the diameter of the crucible is gjj: $ # n seed, ,,. The crystal 1 4 罝 position is the allowable temperature difference Λτ when the metric value D is obtained. , ^ ^ Τ 1 ΤΟ το θ music d figure not, 2' U to find, when adjusting each heating 9 19 f + contact the melt when the seed 曰 14 ^ ^ 9 ' 19 power 'to make ' The temperature difference Δτ between the seed crystal 14 and the melt 5 is Liushe and the sub-crystal 14 . "^"" can prevent the introduction of misplaced species with 5el8atoms/cc miscellaneous sheds 曰 占 贝 占 Β Β Β Β Β Β Β 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 ; mouth two 丄 L § adjust each additional piano power, so that when contacting the melt, the seed crystal 14 and / 'T system allowable temperature difference △ TcdOQOc) below the helmet / / dish degree difference △ 鱿 dream ~, ..., must The necking treatment is carried out, and this is not a misalignment. Fig. 4 is a graph showing the results of the above-mentioned temperature difference ΔΤ 施加 施加 施加 施加 施加 施加 施加 施加 施加 施加 。 。 。 。 。 。 。 。 。 。 。 。 In this experiment

靡Ώ 靡Ώ 靡Ώ 靡Ώ 靡Ώ 靡Ώ 靡Ώ 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 C), 矽 seed crystal 14 contact Hyun & 3 nights to the bottom heater 1 9 input power (Kw) and the main heater 9 to & eight power (Kw) implementation of various 7054-6737-Pp ; Ahddub 1263710 Test (1) ~ (6), when the magnetic field is applied by magnet 20 to (4) 5 (township test (4) ~ (6)), the strength of 3_(10) (four)) magnetic test (1) ~ (3)), the investigation of the misplacement is the input magnetic field To the bright liquid 5 (measured S Ψ, etc. into the seed crystal 1 4. In the 4th, # v γ ~ #于,, · ο日曰14 and the single crystal 矽 system has a misplaced person 軚纪X付号For misplaced helmets, 曰 amp amp 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ In addition, in the experiment, the electric power of the 35κΤ bottom heater 19 is fixed at each value (, 1, 〇 Kw, and two, and the power of the main heater 9 is controlled by the closed loop control system to L::) 5 . Seed knot "The liquid level of contact is the target temperature (for example, as shown in Fig. 4 'When no magnetic field is applied to the scent 5 (test (1) to (3)), only (four) the input power to the bottom heater 19 is sensible) In the test (8) when the input electric power of the main heater 9 is 138 (Kw), the temperature difference is 95 6 or less below the allowable temperature difference (.〇, and it is confirmed that there is no misalignment'. In the tests (1) to (2) of Kw or higher (l〇Kw, 35KW), the temperature difference (m rc, ι 32 C ) exceeded the allowable temperature difference Δ Tc, and it was confirmed that there was a misalignment. In the case where a magnetic field is applied to the melt 5 (tests (4) to (6))', regardless of the input power (input power ratio) to the bottom heater 19 and the main heater 9, the allowable temperature difference ΔTc can be obtained ( I〇〇t>c) The following temperature difference (92.2 Ϊ, 82.5 〇C, 78.5. 〇, in all the above tests, it was confirmed that there was no misalignment. In particular, the input power to the main heater 9 was made to be OKw. In the test of higher value (10Kw, 35Kw), there is misalignment compared to the magnetic field of 7504-6737-PF and Ahddub 15 1263710. 'When a magnetic field is applied, it can be confirmed that it is not misaligned. And 'in Figure 2', Figure 4 shows the point where the error-free bit is achieved. If the symbol 5 has a misalignment, the X symbol is marked. By applying a magnetic field to the melt 5, the reason why the power is not distorted can be easily realized regardless of the input power to the heater, as explained below. That is, by applying a magnetic field to (4) 5, the convection in the material 5 is suppressed, and the heat transfer in the melt 5 is suppressed, and the lateral temperature difference in the melt 5 is increased. The contact seed in the refining liquid 5 The knot portion 14 (contact surface; the temperature f will decrease. By this, in order to maintain the target temperature of the contact surface of the liquid 5, the power input to the main heater 9 will rise and rise. When the power is supplied to the main heater 9 When rising, 'by increasing radiant heat, the temperature of seed crystal 14 will rise, and the temperature of seed crystal 14 will be close to the temperature of melt 5 (higher than the temperature of seed crystal 14). The temperature difference Δ τ will shrink. Therefore, 'seed crystal 14 The highest analytical shear stress MRSS (MPa) in the middle, that is, the maximum thermal stress accompanying the contact liquid is small, and the misalignment is more difficult to introduce. Moreover, the magnetic field strength applied to the melt 5 is preferably 15〇〇. (Gauss) or more. The reason is that when the magnetic field strength is 1 〇〇〇 to 15 〇〇 (Gauss), the temperature fluctuation in the melt 5 becomes intense and unstable portions occur, and there is a problem that the crystal diameter changes. When the value is below 100 () (Gauss), the convection is suppressed: the result is small, so In the present embodiment, the magnetic field is applied from the seed crystal 14 before it contacts the solution 5. 5 The magnetic time point is applied before, and the reason for suppressing the dissolution is that the seed crystal is in contact with the solution field. Go to the melt 5, thereby starting to pull the single crystal crystallization of 7054-6737-PF; Ahddub 16 1263710 liquid temperature change, avoiding a sharp increase in crystal grain size or a smaller crystal diameter

There is a time delay from the application of the magnetic field to the start of the melt 5 until the effect that the convection is suppressed and the temperature fluctuation in the night is suppressed. After applying two 5 to the melt 5, 'about 4'. In minutes, there is the above effect. Therefore I: plus this time delay 'take the magnetic field to the solution 5 before the seed crystallization contact solution for a given time, to #5 / 卜 + from: Z 丄 ", π" ~ shape 3 to make at least the seed crystallize Contact effect. After holding the magnetic field in the seed crystal contact, the solution is continuously transferred to the flat tμ chaos and the force is up to the millenium process. It is best to continue applying the magnetization until the end. 0 until the straight shape (Example 1) In Example 1, the use of 5el diameter 7mm of 矽 seed crystal 14 (capacity "impurity boron δ and W Gu Hui, dish degree difference Δ Tc system 1 〇〇 t; More than 4 from the seed crystal 14 in contact with the scent 5, the magnet 20 is applied with a magnetic field to the melt, and the inside of the melt is started (before the formation of the crystal straight portion is completed), and the ::: end 3 0 0 0 (Gauss ) The magnetic field is ^, , , field strength * magnetic %). That is, the magnetic field applied before the contact with the melt is strong, and the strength of the connection is the same on the day of the day. The electric power of the seed crystal 14 contacting the molten metal 5 is fixed at 35 Kw. The bottom of the heater #19 is also controlled, and the lightning force applied to the main heater 9 is controlled so that the fish seed gentleman power in the solution 5 is closed. The control system comes to "the contact surface of the seed crystal Η becomes the target temperature 7054-6737-PF; Ahddub 1263710

Degree (for example, 1 Ο X n 〇r, N and input, therefore, the power of the bottom heater 19 (Κν/) ^ the power of the heater 9 (Kw), respectively, and the test u and dazzle shown in Fig. 4 When it is 35 (Kw) and 112 (Kw), the value of the seed crystal when it is exposed to the liquid (9 / the difference in the degree of Δ Τ becomes the allowable temperature difference ATcdoot :) below i 2 · 2 C ) 9 can suppress the misplacement of seed crystals ^ 4. Can hold: After the crystal 14 contacts the melt 5, it is not necessary to carry out the necking treatment: After the seed crystals are in contact with the refining liquid, the single crystal Shi Xizhi's traction performance is controlled to control the input of the main heat pump knife...the power of the 9th, so that the power (KW) at the bottom of the input is maintained in the same manner as when the molten metal is contacted. Power 35 (Kw) Under the moon shape, the temperature of the melt 5 becomes the target temperature. As a result, it is possible to culture the early crystallization seconds without the misalignment without performing the necking treatment. Touch: From the "column" because there is no need to shrink the neck, so that the seed crystals 14 4 g - liquid 5 纟 ' can be gradually expanded in diameter while pulling the crystal, also transferred to the parallel process, can also be like the brother 9 As shown in the figure, after contacting the molten metal, the crystal growth portion 22 (for example, a length of about 5 〇 dragons) is pulled by a ▲------, and the main ten-light process is transferred after the temperature of the molten metal is determined to be appropriate. The diameter (minimum crystal diameter) of the crystal growth portion 2 2 is preferably 4 mm or more. In particular, when the present embodiment is used, the temperature fluctuation in the solution 5 is suppressed at the time of the seed crystal "contacting the solution 5, so that the seed crystal 14 can be prevented from being transferred to the second to the thousandth process after contacting the melt. The intergranular particle size is increased to cause misalignment, and the m^ can be avoided because the temperature of the crystal grain is small, and the crystal grain size is small enough to be able to support the diameter of the pulled crystal. The relationship between crystal diameter and load resistance is 7054-6737-PF; Ahddub 18 1263710. Corresponding to the diameter of the single crystal of Shixi (the finest diameter until the parallel process), the load resistance can be determined. In the embodiment, the diameter of the single crystal of the crucible is not as small as the diameter of the seed crystal by 14 or less, and the diameter of the seed crystal 14 can be maintained, so that the weight of the monocrystal to be pulled (caliber) is set, and the diameter of the seed crystal is set to be 14 It is true that the large-diameter, large-weight Shixi single crystal is pulled off. Moreover, when the present embodiment is used, the power of the bottom heater 19 is applied when the seed crystal is in contact with the melt and after. In the case of the change, the misalignment of the single crystal enthalpy that is pulled out can be realized, so that the adjustment work of the heater is simplified, and the burden on the operator is reduced. Moreover, when the present embodiment is used, the seed crystal is in contact. At the time of the melt and after the power supplied to the bottom heater 丨9 is maintained at a certain level or higher (35 Kw), the misalignment of the single crystal ruthenium which is pulled out can be realized, so that the contact crystallization of the seeds can be avoided. After the liquid is introduced, the electric power of the bottom heater 19 is increased, and the diameter of the pulled single crystal crucible is largely changed. Moreover, when the seed crystal crucible 4 contacts the molten metal 5, the heat shield 8 can be raised by the lifting device. More radiant heat is applied to the seed crystal 5 to further reduce the temperature difference Δ T. Further, it is preferable to make the difference between the impurity concentration added to the seed crystal 14 and the impurity concentration in the solution 5 a certain standard. Below the position, it can avoid the misalignment caused by thermal shock. At the same time, it can avoid the misalignment caused by the unconformity of the lattice at the junction of the seed crystal 丄4 and the melt$ (does not cooperate with the misalignment). Type and the impurity concentration of the impurity based solution of the melt 5 by customer side half body opposed agricultural companies only said prescribed specifications determined. Specifically, the impurity B based butterfly

7〇S4~6737-PF; Ahddub 1Q 1263710 5el4~2el9atoms/cc within the specified concentration; the specified concentration in the range of heterozygous lel4~8el8atoms/cc; the established concentration in the range of 2el7~lel9atoms/cc; heterozygous 5el8~le20atoms The established concentration in the /cc range. In order to suppress the misalignment caused by the unconformity of the lattice, it is preferable to use the seed crystal 1 4 ' adjusted for the impurity species/initial in advance to make the seed crystal 14 4 and the lattice of the single crystal stone in the evening. The unconformity rate is below O.Oi%. Further, in the present embodiment, although the seed crystal enthalpy 4 is brought into contact with the applied magnetic field strength and is stronger than the magnetic field applied when the single crystal grows, the degree of application of the seed crystal 14 before the molten metal is contacted may be applied when the single crystal grows. The magnetic field strength is even greater. In addition, in the first embodiment, the diameter of the stone is used as a preset, but when the diameter of the seed is more than 4 mm, the seeding of the seed can be cultivated without the need of the necking treatment. A single crystal of 200 kg and a diameter of 300 mm; in the case of g, the crystal 1 4 is preferably more than 5 mm. (Example 2) Further, the single crystal pulling device 1 shown in the single crystal pulling device shown in Fig. 5 may be used. In the apparatus shown in Fig. 5, the heater 9 omitting the bottom heater 19 is divided into the upper and lower heat exchangers 9a, 9b along the vertical direction of the quartz crucible 3. The heaters 9a, 9b can be adjusted for quartz failure, i.e., the output can be independently adjusted. In the apparatus of the embodiment, the 燐P system Sb system A s is the same as the junction between the impurity side 5 and the impurity before the solution, and the magnetic field is strong and the crystal is the same. In the traction 矽 seed knot instead of the first arrangement, the heating of the main 2 section plus 3 can add 7054-6737-PF; Ahddub 20 ! 26371 〇 ', ', and the device 9 is divided into 2 segments' can also be divided into the above composition The multiple heaters are also the same as in the first embodiment. When the magnetic field is applied to the blaze 5 before the crystallization 14 is contacted with the solution 5, the two-phase R-seeds per seed are not required to be necked and have no misalignment, so that they are not broken: For example, a male, a large diameter, large weight single crystal. Indeed (Example 3) In the above embodiment, the preset single crystal pulling device cookware has been described as being hot. However, when the single crystal pulling device X has - plus =, that is, in the i-th picture, even when the bottom heater 19, two: the single heater having the main heater 9 is constituted, when the seed is "contacted" When the magnetic field is applied to the solution 5 before the solution 5, the same two:: through the necking treatment and without the misalignment, the second crystal of the technique and the weight can be reliably pulled without breaking. In the above embodiment, Although the example of the observation B is used for the impurity, when the various impurities such as gallium Ga or strontium other than the addition of the fourth (four) are crystallized into the seed, similarly, the misalignment due to thermal shock can be suppressed from being introduced into the seed crystal, and the single crystal can be The crystal enthalpy is cultured without dislocation. The figure 6 shows the concentration range in which the dislocation into the seed crystal due to thermal shock is suppressed when various elements are added to the seed crystal 14. That is, when the impurity is bad B, it can be added. The reason is as follows: After the traction, after the X-ray valence seed crystal 14 and the interface portion of the newly formed crystal after the contact with the melt, 'when adding the impurity boron B to the seed crystal 14 above the lime 8 〇mS/cc, no dislocation is found. Import seed Crystal 14. In addition, when the impurity is gallium Ga, 'add 5el9at 〇ms/cc or more; when the impurity is 7054-6737-PF; Ahddub 1263710 indium I η, add 1 e 1 6 ato in s / cc or more; When the impurity is 燐p, lei 9a toms/cc or more may be added; when the impurity is God As, 5el9atoms/cc or more may be added, and when the impurity is recorded as §b, le9atoms/cc may be added; when the impurity is 锗Ge 5el9atoms/cc or more may be added when the impurity is nitrogen N; 8el3 atoms/cc or more may be added when the impurity is carbon C. Also, in the above description, when adding high concentration impurities When the seed crystals i 4 , combined with the application of a magnetic field to the melt 5, it is not necessary to carry out the necking treatment, and the large-diameter, large-weight single crystal stone ingot can be pulled in a state of no misalignment, but 'by adding high Concentration impurities can prevent misalignment due to thermal shock. Therefore, it is possible to add only high-concentration impurities to the seed crystals 14 without applying a magnetic field to the melt 5. Further, in the above description, the size of the seed crystals 14 is described. Take the diameter D as an example to find the allowable temperature In the case of the degree difference ΔTc, the allowable temperature difference atc may be obtained by taking the front end surface area of the seed crystal 14 or the like as the size of the seed crystal 14. [Simplified illustration] Fig. 1 A schematic diagram showing a single crystal pulling device according to an embodiment of the present invention. Fig. 2 is a graph showing a relationship between a temperature difference between a seed crystal and a melt and a highest analytical shear stress. Fig. 3 is a view showing a seed crystal diameter and a seed. A graph showing the relationship between the impurity concentration in the crystal and the temperature difference between the valleys. 7054-6737-PF; Ahddub 22 1263710 Fig. 4 is a graph showing the results of experiments performed to compare the application and non-application of a magnetic field to the melt. Fig. 5 is a schematic view showing a single crystal pulling device different from Fig. 1. Fig. 6 is a graph showing the relationship between the various elements added to the seed crystals and the concentration range in which the thermal shock misalignment is not introduced. Fig. 7 is a graph showing the relationship between the diameter of the crystal and the load resistance. Figure 8 is a schematic view showing the cushion neck. Fig. 9 is a view showing a crystal growth portion after contact with a melt. To the symbol description of the component] 1 ~ single crystal pulling device; 2 ~ CZ furnace; 3 ~ quartz crucible; 4 ~ traction mechanism 4a ~ traction shaft; 4 c ~ crystal species 5 ~ melt; 7 ~ argon; 9; main heater; 9a, 9b~ heater; 1 0~ rotating shaft; 11~ carbon 坩埚; 1 3~ insulating cylinder 14~ seed crystal; 1 9~ bottom heater 2 0~ magnet; 2 1~ Constricted neck; 22~ crystal growth section. 7054-6737-PF; Ahddub 23

Claims (1)

1263710 X. Patent application 3: 1·- A method for manufacturing a single-crystal semiconductor, in which a seed crystal is added to contact with a molten liquid in a disaster, and a crystal semiconductor is produced by pulverizing seed crystal, and the expression is characterized by inclusion : a step of applying a magnetic field to the solution; a step of bringing the solution into contact with the seed crystal; and a step of drawing the crystallized semiconductor after the seed crystal is contacted with the solution. 2. The method of manufacturing a single-crystal semiconductor according to claim 1, wherein the magnetic field is applied before the solution is brought into contact with the seed crystal, and the manufacturing process is performed, as in the first item of the patent application. The method of crystallizing a semiconductor early in the smear, wherein the magnetic field strength is 15 〇〇 Gauss or more. 4) If you apply for a patent scope! The method for producing a single-crystal semiconductor according to the above-mentioned item, wherein the method of producing a single-crystal semiconductor according to the first aspect of the invention is the method for producing a single-crystal semiconductor according to the first aspect of the invention. The minimum crystal diameter of the seed crystal after contact with the melt is above. 7054-6737-PF; Ahddub 24